US7119409B2 - Organic el display - Google Patents

Organic el display Download PDF

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US7119409B2
US7119409B2 US10/520,010 US52001003A US7119409B2 US 7119409 B2 US7119409 B2 US 7119409B2 US 52001003 A US52001003 A US 52001003A US 7119409 B2 US7119409 B2 US 7119409B2
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color
layer
organic
layers
organic electroluminescent
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US20060113617A1 (en
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Yukinori Kawamura
Kenya Sakurai
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Sharp Corp
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Fuji Electric Holdings Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the invention relates to an organic EL (electroluminescent) display with high definition and excellent reliability, that can be used in a wide range of applications such as a display in mobile terminal equipment or industrial measuring equipment.
  • TFTs thin film transistors
  • Japanese Patent Application Laid-open No. 11-297477 there is disclosed a structure in which an organic EL device and color-converting filters (color-converting layers alone or laminates of color filter layers and color-converting layers) are disposed facing a transparent electrode on the upper side of the organic EL device with a fixed gap provided therebetween by a columnar gap-adjusting layer disposed therebetween. Moreover, a structure in which this gap is filled with an insulating oil or the like is disclosed in Japanese Patent Application Laid-open No. 3-92398.
  • Japanese Patent No. 2766095 there is disclosed a constitution in which an organic EL device, and color-converting filters that face a transparent electrode on an upper part of the organic EL device are firmly bonded together via a transparent resin layer.
  • this constitution there is a problem of damage such as peeling away of the EL device occurring through mechanical stress such as vibration or pressure or thermal stress produced, for example, through changes in the temperature of the environment in which the manufactured display is placed or during the step of bonding the organic EL device and the color-converting filters together.
  • Japanese Patent Application Laid-open No. 11-121164 there is disclosed a constitution in which a base film, which is a resin film, and a binding layer, which is also a resin film, are formed between an organic EL device and color-converting filters with the binding layer on the color-converting filter side.
  • a base film which is a resin film
  • a binding layer which is also a resin film
  • the roles of the binding layer are to flatten out level differences on the color-converting filters, and to function as a cushioning film between the color-converting filters and the base film.
  • no consideration is given to adjusting the gap between the color-converting filters and the organic EL device.
  • the binding layer is made to function merely as a cushioning film with the base film, and there are no suggestions regarding relieving stress on the crucial organic EL device.
  • the invention of Japanese Patent Application Laid-open No. 11-121164 does not have TFTs, and hence there is no mention of resolving problems peculiar to an organic EL display having TFTs as in the invention.
  • an organic EL display having on a substrate thin film transistors that each have a source and a drain, and an organic EL device in which first electrodes that are made of an electrically conductive thin film material and are each connected to the source or the drain, at least an organic EL light-emitting layer, a second electrode that is an upper transparent electrode made of a transparent electrically conductive thin film material, and at least one passivation layer are built up on the thin film transistors and which is driven by the thin film transistors, color-converting layers alone or laminates of color filter layers and color-converting layers that are formed on a transparent supporting substrate being disposed facing the second electrode side of the organic EL device, it is made to be such that at least two overcoat layers having different Young's moduli to one another are laminated on the second electrode side of the color-converting layers alone or the laminates of color filter layers and color-converting layers, and out of the overcoat layers, an overcoat layer on the second electrode side is made to be
  • the overcoat layer having the lowest Young's modulus is in close contact with the surface of the passivation layer within a display area of the organic EL device.
  • an overcoat layer for gap adjustment is disposed on the transparent substrate side, and an overcoat layer for relieving stress is formed on the substrate side (i.e. the organic EL device side), this being in facing relation with no space being provided; in particular, by providing the overcoat layer for relieving stress, which has a relatively low Young's modulus, gas voids that would have an adverse effect on the display performance can be prevented from occurring at the interface with the passivation layer.
  • the overcoat layer having the lowest Young's modulus is made to be in close contact with the passivation layer within the display area, and thus fills up spaces produced by undulations caused by TFT wiring, and moreover relieves mechanical stress and thermal stress to which the organic EL display is subjected from the environment.
  • the undulations due to the wiring on the TFT substrate are approximately 1 to 2 ⁇ m in size, and hence the thickness of the overcoat layer having the lowest Young's modulus that fills up these undulations is suitably 2 to 4 ⁇ m.
  • FIG. 1 is a schematic sectional view showing the constitution of an organic EL display of the invention.
  • FIG. 2 is a schematic sectional view showing the constitution of a comparative example in the invention.
  • first electrodes are anodes and a second electrode is a cathode, but it is also possible to make the first electrodes (lower electrodes) be cathodes and make the second electrode (upper electrode) be an anode.
  • TFT Thin Film Transistor
  • TFTs are arranged in a matrix on an insulating substrate made of glass, plastic or the like, or a substrate obtained by forming an insulating thin film on a semiconductive or conductive substrate, and source electrodes are connected to the anodes in correspondence with the pixels.
  • the TFTs are of a bottom gate type in which a gate electrode is provided below a gate insulating film, and a polycrystalline silicon film is used as an active layer.
  • the anodes are formed on a flattening insulating film formed on the TFTs.
  • indium tin oxide ITO
  • an electrode of a metal having high reflectivity aluminum, silver, molybdenum, or tungsten
  • the organic EL device For the organic EL device, one having a layer structure such as the following is adopted.
  • Anodes hole injection layer, hole transport layer, organic EL light-emitting layer, electron injection layer, cathode.
  • the cathode in the above layer structures, the cathode must be transparent (i.e. have a transmissivity of at least approximately 50%) in the wavelength region of the light emitted by the organic EL light-emitting layer, the light being emitted via this cathode.
  • this may include a hole injection layer, a hole transport layer, and/or an electron injection layer.
  • the transparent cathode is made to have a structure in which an ultra-thin film (not more than 10 nm) of an electron-injecting metal selected from alkali metals such as lithium and sodium, alkali earth metals such as potassium, calcium, magnesium and strontium, and fluorides and so on thereof, or an alloy thereof with other metals or a compound thereof is used as an electron injection layer, and a transparent electrically conductive film of ITO, IZO or the like is formed thereon.
  • an ultra-thin film not more than 10 nm
  • an electron-injecting metal selected from alkali metals such as lithium and sodium, alkali earth metals such as potassium, calcium, magnesium and strontium, and fluorides and so on thereof, or an alloy thereof with other metals or a compound thereof is used as an electron injection layer, and a transparent electrically conductive film of ITO, IZO or the like is formed thereon.
  • Publicly-known materials are used as the materials of the various layers of the organic EL light-emitting layer.
  • a fluorescent whitening agent of benzothiazole type, benzimidazole type, benzoxazole type or the like for example, a metal chelated oxonium compound, a styrylbenzene type compound, an aromatic dimethylidene type compound, or the like is preferably used as the organic EL layer.
  • a material that is electrically insulating acts as a barrier against moisture and low-molecular-weight components, has high transparency in the visible region (a transmissivity of at least 50% in a range of 400 to 700 nm), and preferably has a film hardness of at least 2 H is used.
  • an inorganic oxide or inorganic nitride such as SiO x , SiN x , SiN x O y , AlO x , TiO x , TaO x or ZnO x , or the like can be used.
  • the passivation layer can be formed using sputtering, CVD, vacuum deposition or the like. So long as there is no direct effect on the device, the passivation layer can also be formed using a commonly used method such as dipping.
  • the passivation layer may be a single layer, but the effects of the passivation layer such as the barrier ability against moisture will be greater with a passivation layer comprising a plurality of layers formed on top of one another.
  • the thickness of such a multi-layered passivation layer is preferably 0.1 to 5 ⁇ m.
  • Overcoat layers may be formed on the organic EL device side, but the organic EL device is constituted from materials that are susceptible to heat and ultraviolet radiation, and hence there will be various constraints in the case of forming overcoat layers on the organic EL device. It is thus more preferable to form overcoat layers on the color-converting layers, which are stronger to heat and ultraviolet radiation.
  • an overcoat layer furthest from the passivation layer one that can be formed on the color-converting layers without marring the functions of the color-converting layers, and has high elasticity is preferable; a material that has high transparency in the visible region (a transmissivity of at least 50% in a range of 400 to 700 nm), Tg of at least 100° C., and a surface hardness of at least pencil hardness 2 H, for which a smooth coating film can be formed on the color-converting layers, and that does not cause deterioration in the functions of the color-converting filter layers is preferable, with examples being light-curable resins and/or heat-curable resins such as imide-modified silicone resins (see Japanese Patent Application Laid-open No.
  • the Young's modulus is preferably at least 0.3 MPa. This overcoat layer is for keeping the gap described in the Aproblems@ section constant, and if the Young's modulus is less than 0.3 MPa, then it will no longer be possible to keep this gap constant under external stress.
  • An overcoat layer closest to the passivation layer may be, for example, a polymeric material that does not contain rigid groups in the unit structure thereof such as a polyamide resin such as nylon 6 or nylon 6—6, or a silicone rubber or gel, any of various synthetic rubbers, or the like.
  • a material having a Young's modulus of not more than 0.3 MPa is preferable, more preferably not more than 0.1 MPa.
  • the material is made to have a Young's modulus of at least 0.01 MPa.
  • a photoresist can also be used if the photoresist contains a straight chain oligomer not containing rigid groups or a monomer having not more than three functional groups as a raw material thereof, and the three-dimensional crosslink density of the cured material is not very high.
  • a photoresist other than this can be used as the stress-relieving layer by being used in a state in which the crosslink density has been made to not become very high through weakening the irradiation with light or the amount of heating.
  • organic fluorescent colorants for use in the color-converting layers
  • fluorescent colorants that absorb light from the blue to blue/green region emitted from the light emitter and emit fluorescence in the red region
  • rhodamine type colorants such as Rhodamine B, Rhodamine 3B, Rhodamine 101, Rhodamine 110, sulforhodamines, Basic Violet 11 and Basic Red 2
  • cyanine type colorants cyanine type colorants
  • pyridine type colorants such as 1-ethyl-2-[4-(p-dimethylaminophenyl)-1,3-butadienyl]pyridinium perchlorate (Pyridine 1), oxazine type colorants, and so on.
  • various dyes direct dyes, acid dyes, basic dyes, disperse dyes, etc.
  • fluorescent colorants that absorb light from the blue to blue/green region emitted from the light emitter and emit fluorescence in the green region are coumarin type colorants such as 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (Coumarin 6), and Basic Yellow 51, which is a coumarin colorant type dye, and also naphthalimide type colorants such as Solvent Yellow 11 and Solvent Yellow 116, and so on. Furthermore, various dyes (direct dyes, acid dyes, basic dyes, disperse dyes, etc.) can also be used if fluorescent.
  • coumarin type colorants such as 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (Coumarin 6)
  • Basic Yellow 51 which is a coumarin colorant type dye
  • naphthalimide type colorants such as Solvent Yellow 11 and Solvent Yellow 116, and so on.
  • various dyes direct dyes, acid dyes, basic dyes, disperse dyes, etc
  • a matrix resin used in the color-converting filters in the invention is a light-curable or joint-light/heat-curable resin that is made insoluble and unmeltable by carrying out light and/or heat treatment, thus generating radical species or ionic species and hence polymerizing or crosslinking the resin.
  • the color-converting filters are made to be laminates of color filter layers and the color-converting layers.
  • the color filter layers preferably have a thickness of 1 to 1.5 ⁇ m.
  • FIG. 1 is a schematic sectional view of an organic EL display of the example of the invention.
  • FIG. 2 is a comparative example in the invention.
  • TFT substrate ( 1 , 2 , 3 )
  • bottom gate type TFTs 2 were formed on a glass (first or base) substrate 1 , and the source of each TFT was connected to an anode 3 .
  • aluminum which was connected to the source of the corresponding TFT via a contact hole formed in an insulating film on the TFT, not shown, was formed as a lower part, and IZO (InZnO) was formed on the upper surface thereof.
  • the aluminum is provided to reflect light emitted from the light-emitting layer so that light is discharged efficiently from the top, and to reduce the electrical resistance.
  • the thickness of the aluminum film was made to be 300 nm.
  • the upper part IZO has a high work function, and hence is provided so that holes can be injected efficiently.
  • the thickness of the IZO was made to be 200 nm.
  • An organic EL device was constituted from the anodes 3 , an organic EL layer 4 , and a cathode 5 , shown in FIG. 1 .
  • the EL layer 4 comprises four layers: a hole injection layer, a hole transport layer, an organic EL light-emitting layer, and an electron injection layer.
  • the substrate 1 having the anodes 3 formed thereon was put into a resistive heating vapor deposition apparatus, and the hole injection layer, the hole transport layer, the organic EL light-emitting layer, and the electron injection layer were deposited in this order without releasing the vacuum.
  • the pressure inside the vacuum chamber was reduced down to 1H10 ⁇ 4 Pa.
  • Copper phthalocyanine (CuPc) was formed to a thickness of 100 nm as the hole injection layer.
  • 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl ( ⁇ -NPD) was formed to a thickness of 20 nm as the hole transport layer.
  • DPVBi 4,4-bis(2,2′-diphenylvinyl)biphenyl
  • Alq aluminum chelate
  • a transparent cathode 5 was formed using a metal mask without releasing the vacuum.
  • the transparent cathode 5 was formed by depositing metallic Mg/Ag, which has a low work function as required for injection of electrons, to a thickness of 2 nm using a codeposition method, and then depositing an IZO film thereon to a thickness of 200 nm using a sputtering method.
  • An SiON x film was deposited by sputtering to a thickness of 300 nm as a passivation layer 6 .
  • a blue filter material (made by Fuji Hunt Electronics Technology; Color Mosaic CB-7001) was applied using a spin coating method onto a transparent (glass) substrate 12 , and then patterning was carried out using a photolithography method, thus obtaining a line pattern with a thickness of 10 ⁇ m.
  • Red and green color filter layers (not shown) made of similar color filter materials were applied using a spin coating method onto the transparent substrate 12 , and then patterning was carried out using a photolithography method, thus obtaining line patterns with a thickness of 1.5 ⁇ m.
  • a black mask 11 (thickness 10 ⁇ m) was formed between the color-converting layers 10 of the various colors.
  • a black mask having high thermal conductivity first 500 nm of chromium oxide was formed by sputtering using a mask enabling formation of a lattice pattern on walls of the color-converting layers.
  • an SiN film was formed by sputtering around the red, green and blue pixels so as to be the same thickness.
  • the pitch of the pixels was 0.3 (0.3 mm, and the shape of the sub-pixels of the various colors was 0.1 (0.3 mm.
  • ZPN 1100 made by Nippon Zeon Co., Ltd. (Young's modulus approximately 5 MPa) was applied using a spin coating method onto an upper surface of the color-converting layers 10 , and then patterning was carried out using a photolithography method, thus forming a first overcoat layer 7 on the color-converting layers 10 .
  • the thickness from the surface of the color-converting layers 10 was 3 ⁇ m.
  • a silicone gel made by Toray-Dow Corning (Young's modulus approximately 0.05 MPa) for relieving stress and also covering unevenness of the TFT wiring was coated onto the first overcoat layer 7 using a screen printing method.
  • the thickness at the time of the screen printing was 4 to 5 ⁇ m, but this thickness can be approximately halved through the step of bonding together by applying pressure.
  • the method of applying on the silicone gel is not limited to being screen printing, but rather the required amount may be merely dripped on, or means such as a bar coater or an edge coater enabling formation of a thin layer may be used.
  • the substrate 1 having the organic EL device and the passivation layer 6 formed on the TFTs 2 , and the transparent substrate 12 having the color filter layers 9 , the color-converting layers 10 , the black mask 11 , the first overcoat layer 7 and the second overcoat layer 8 formed thereon obtained as described above were bonded together using a UV-curing sealing resin 13 .
  • a UV-curing epoxy adhesive or a UV-curing acrylic adhesive is used as the sealing resin 13 .
  • the second overcoat layer 8 comes into close contact with, but is not bonded to, the passivation layer 6 . This is because if the second overcoat layer 8 were bonded to the passivation layer 6 , then upon being subjected to stress from the outside, defects would arise such as peeling away on the EL device side where the adhesive strength is weakest.
  • a negative type resist AJNPC-48 @ (made by JSR) was used as a first overcoat layer (transparent resin adhesive layer 7 ), and then, without providing a second overcoat layer, the transparent substrate 12 and the substrate 1 were bonded together using a polycarbonate. Other conditions were made to be the same as in Example.
  • This example is illustrated in FIG. 2 .
  • a Heat cycle test The manufactured display was subjected to a heat cycle test (!40° C.: 95° C., 120 cycles, temperature raising/decreasing time less than 5 min), and it was observed whether or not abnormalities in the form arose.
  • the color-converting filters and the black mask cannot necessarily be formed with the same thickness, and moreover recesses may be formed between patterns due to misalignment occurring during the patterning; such undulations can be flattened out by the first overcoat layer.
  • the gap between the color-converting filters (color-converting layers) and the organic EL device can be adjusted through this first overcoat layer.
  • the second overcoat layer which has a lower Young's modulus (i.e. is more flexible), small undulations due to wiring on the TFT substrate, which is a problem peculiar to devices having TFTs, can be covered, and hence gas voids that would have an adverse effect on the display performance can be prevented from occurring at the interface with the passivation layer. Furthermore, the second overcoat layer also fulfils a role of relieving stress, and hence the occurrence of stress due to the external environment such as thermal stress can be suppressed; an organic EL display having high reliability can thus be provided.

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US20100320446A1 (en) * 2007-02-05 2010-12-23 Lg Chem, Ltd. Organic light-emitting device having improved light-emitting efficiency and method for fabricating the same
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* Cited by examiner, † Cited by third party
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CN100416851C (zh) * 2005-01-14 2008-09-03 铼宝科技股份有限公司 有机电激发光显示面板
DE112006003096T5 (de) * 2005-11-11 2008-10-23 Fuji Electric Holdings Co., Ltd. Organische EL-Lichtemissions-Anzeige
JP4533392B2 (ja) * 2006-03-22 2010-09-01 キヤノン株式会社 有機発光装置
CN102456839A (zh) * 2010-10-21 2012-05-16 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN103636286B (zh) * 2011-06-23 2017-02-15 三井化学株式会社 光半导体用的表面密封剂、使用其的有机el器件的制造方法、有机el器件以及有机el显示面板
US10249848B2 (en) * 2011-11-02 2019-04-02 Joled Inc. Organic light-emitting panel and method for producing same
WO2013103284A1 (ko) 2012-01-06 2013-07-11 주식회사 엘지화학 전자장치의 제조방법
TWI613709B (zh) * 2013-02-20 2018-02-01 財團法人工業技術研究院 半導體元件結構及其製造方法與應用其之畫素結構
JP6337581B2 (ja) * 2014-04-08 2018-06-06 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置、及び電子機器
JP6427408B2 (ja) * 2014-12-19 2018-11-21 エルジー ディスプレイ カンパニー リミテッド 透明有機ｅｌ表示装置
KR20160095315A (ko) * 2015-02-02 2016-08-11 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105374943A (zh) * 2015-11-25 2016-03-02 吕珩 一种防漏光有机发光二极管
TWI780041B (zh) * 2016-02-04 2022-10-11 晶元光電股份有限公司 一種發光元件及其製造方法
CN107393944A (zh) * 2017-07-12 2017-11-24 武汉华星光电半导体显示技术有限公司 显示面板及制作方法
CN112366281B (zh) * 2020-11-09 2023-04-07 合肥京东方卓印科技有限公司 一种封装盖板及其制造方法、显示板面、显示装置
CN113593414B (zh) * 2021-07-30 2023-09-29 京东方科技集团股份有限公司 显示面板及显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594878A (ja) 1991-10-01 1993-04-16 Sharp Corp マルチカラーｅｌパネル
JPH08124677A (ja) 1994-10-21 1996-05-17 Idemitsu Kosan Co Ltd 有機ｅｌデバイス
JPH10289784A (ja) 1997-04-14 1998-10-27 Mitsubishi Chem Corp 有機電界発光素子
JP2000150156A (ja) 1998-09-07 2000-05-30 Fuji Electric Co Ltd 多色発光有機エレクトロルミネッセンス素子およびその製造方法
US6114805A (en) * 1997-07-18 2000-09-05 Tdk Corporation Organic electroluminescent display with filter layer
JP2001338754A (ja) 2000-05-30 2001-12-07 Casio Comput Co Ltd 電界発光素子
JP2003036974A (ja) 2001-07-23 2003-02-07 Victor Co Of Japan Ltd 有機エレクトロルミネッセンス素子及びその製造方法
JP2003163078A (ja) 2001-11-28 2003-06-06 Hitachi Ltd 表示装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594878A (ja) 1991-10-01 1993-04-16 Sharp Corp マルチカラーｅｌパネル
JPH08124677A (ja) 1994-10-21 1996-05-17 Idemitsu Kosan Co Ltd 有機ｅｌデバイス
JPH10289784A (ja) 1997-04-14 1998-10-27 Mitsubishi Chem Corp 有機電界発光素子
US6114805A (en) * 1997-07-18 2000-09-05 Tdk Corporation Organic electroluminescent display with filter layer
JP2000150156A (ja) 1998-09-07 2000-05-30 Fuji Electric Co Ltd 多色発光有機エレクトロルミネッセンス素子およびその製造方法
JP2001338754A (ja) 2000-05-30 2001-12-07 Casio Comput Co Ltd 電界発光素子
JP2003036974A (ja) 2001-07-23 2003-02-07 Victor Co Of Japan Ltd 有機エレクトロルミネッセンス素子及びその製造方法
JP2003163078A (ja) 2001-11-28 2003-06-06 Hitachi Ltd 表示装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050179377A1 (en) * 2004-02-18 2005-08-18 Seiko Epson Corporation Organic electroluminescent device and electronic Apparatus
US7323817B2 (en) * 2004-02-18 2008-01-29 Seiko Epson Corporation Organic electroluminescent device and electronic apparatus
US20050269944A1 (en) * 2004-06-08 2005-12-08 Au Optronics Corp. Organic electroluminescent display and fabricating method thereof
US20100133515A1 (en) * 2007-01-30 2010-06-03 Xia Sheng Layered devices with crosslinked polymer and methods of preparing the same
US8003980B2 (en) 2007-01-30 2011-08-23 Hewlett-Packard Development Company, L.P. Layered electro-organic devices with crosslinked polymer and methods of preparing the same
US20100320446A1 (en) * 2007-02-05 2010-12-23 Lg Chem, Ltd. Organic light-emitting device having improved light-emitting efficiency and method for fabricating the same
US8253127B2 (en) * 2007-02-05 2012-08-28 Lg Chem, Ltd. Organic light-emitting device having improved light-emitting efficiency and method for fabricating the same
US20110133628A1 (en) * 2007-09-19 2011-06-09 Osram Opto Semiconductors Gmbh Opto-Electronic Component
US8314547B2 (en) 2007-09-19 2012-11-20 Osram Opto Semiconductors Gmbh Opto-electronic component
US9935289B2 (en) 2010-09-10 2018-04-03 Industrial Technology Research Institute Institute Environmental sensitive element package and encapsulation method thereof
US9847509B2 (en) 2015-01-22 2017-12-19 Industrial Technology Research Institute Package of flexible environmental sensitive electronic device and sealing member
US11031441B2 (en) * 2018-03-01 2021-06-08 Seiko Epson Corporation Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

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AU2003241653A1 (en) 2005-01-04
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GB0427769D0 (en) 2005-01-19
CN1685768A (zh) 2005-10-19

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