US6703190B2 - Method for producing resist structures - Google Patents

Method for producing resist structures Download PDF

Info

Publication number
US6703190B2
US6703190B2 US10/164,550 US16455002A US6703190B2 US 6703190 B2 US6703190 B2 US 6703190B2 US 16455002 A US16455002 A US 16455002A US 6703190 B2 US6703190 B2 US 6703190B2
Authority
US
United States
Prior art keywords
resist
process according
salt
chemical amplification
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US10/164,550
Other languages
English (en)
Other versions
US20030008240A1 (en
Inventor
Klaus Elian
Stefan Hien
Ernst-christian Richter
Michael Sebald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of US20030008240A1 publication Critical patent/US20030008240A1/en
Assigned to INFINEON TECHNOLOGIES, AG reassignment INFINEON TECHNOLOGIES, AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIEN, STEFAN, ELIAN, KLAUS, RICHTER, ERNST-CHRISTIAN, SEBALD, MICHAEL
Application granted granted Critical
Publication of US6703190B2 publication Critical patent/US6703190B2/en
Assigned to QIMONDA AG reassignment QIMONDA AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES AG
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QIMONDA AG
Assigned to POLARIS INNOVATIONS LIMITED reassignment POLARIS INNOVATIONS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES AG
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing

Definitions

  • the photobase generator has at least one of the following compounds: O-acyloxime, a benzyloxycarbonylamide derivative, a formamide derivative, a diarylmethanetrialkylammonium salt, o-nitrobenzyloxycarbonylcyclohexylamine, 2,6-dinitrobenzyloxycarbonylcyclohexylamine, a nifedipine derivative, and/or polymer-bound photobase generators based on one of the aforementioned base precursors.
  • a sulfonic acid is liberated by the thermal treatment from the thermoacid generator present in the resist.
  • the acid is preferably an organic sulfonic acid with an aromatic or aliphatic nature, particularly an acid from the following group: aromatic sulfonic acids substituted on the aromatic radical—in any position—by halogen atoms, nitro groups or aliphatic radicals (containing 1 to 5 carbon atoms); aliphatic sulfonic acids substituted on the aliphatic radical—in any position—by halogen atoms or nitro groups; aliphatic sulfonic acids containing polycyclic aliphatic groups, especially adamantyl groups and norbornyl groups.
  • the top resist in accordance with Example 1 is exposed to UV radiation at 248 nm through a gray wedge mask (multi-density resolution target/Ditric Optics) on a mask aligner with vacuum contact exposure (MJB 3/Süss KG with UV-M interference filter/Schott) and then heat treated (PEB) on a hotplate at 150° C. for 60 s.
  • the tert-butyl ester, catalyzed by the acid formed, is cleaved.
  • Development 60 s) in a vessel thermostated at 23° C. using a commercial developer dissolves away the unexposed areas of the resist, leaving a negative image of the mask.
  • This example therefore illustrates the usefulness in principle of the resist system for lithographic applications.
US10/164,550 1999-12-07 2002-06-07 Method for producing resist structures Expired - Fee Related US6703190B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19958966 1999-12-07
DE19958966A DE19958966A1 (de) 1999-12-07 1999-12-07 Erzeugung von Resiststrukturen
DE19958966.6 1999-12-07
PCT/DE2000/004237 WO2001042860A1 (de) 1999-12-07 2000-11-27 Erzeugung von resiststrukturen

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/004237 Continuation WO2001042860A1 (de) 1999-12-07 2000-11-27 Erzeugung von resiststrukturen

Publications (2)

Publication Number Publication Date
US20030008240A1 US20030008240A1 (en) 2003-01-09
US6703190B2 true US6703190B2 (en) 2004-03-09

Family

ID=7931715

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/164,550 Expired - Fee Related US6703190B2 (en) 1999-12-07 2002-06-07 Method for producing resist structures

Country Status (6)

Country Link
US (1) US6703190B2 (de)
EP (1) EP1247141A1 (de)
KR (1) KR100573672B1 (de)
DE (1) DE19958966A1 (de)
TW (1) TW554247B (de)
WO (1) WO2001042860A1 (de)

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20020150398A1 (en) * 2000-08-21 2002-10-17 Choi Byung J. Flexure based macro motion translation stage
US20030205657A1 (en) * 2002-05-01 2003-11-06 Voisin Ronald D. Methods of manufacturing a lithography template
US20030215577A1 (en) * 2002-05-16 2003-11-20 Willson Carlton Grant Method and system for fabricating nanoscale patterns in light curable compositions using an electric field
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field
US20040022888A1 (en) * 2002-08-01 2004-02-05 Sreenivasan Sidlgata V. Alignment systems for imprint lithography
US20040038552A1 (en) * 2002-08-23 2004-02-26 Watts Michael P.C. Method for fabricating bulbous-shaped vias
US20040053146A1 (en) * 2000-07-16 2004-03-18 University Of Texas System Board Of Regents, Ut System Method of varying template dimensions to achieve alignment during imprint lithography
US20040065976A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
US20040089979A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US20040104641A1 (en) * 1999-10-29 2004-06-03 University Of Texas System Method of separating a template from a substrate during imprint lithography
US20040112153A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Method and system for determining characteristics of substrates employing fluid geometries
US20040112861A1 (en) * 2002-12-11 2004-06-17 Molecular Imprints, Inc. Method for modulating shapes of substrates
US20040124566A1 (en) * 2002-07-11 2004-07-01 Sreenivasan Sidlgata V. Step and repeat imprint lithography processes
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US20040170770A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040170771A1 (en) * 2000-10-12 2004-09-02 Board Of Regents, The University Of Texas System Method of creating a dispersion of a liquid on a substrate
US20040180984A1 (en) * 2002-12-11 2004-09-16 Samsung Electronics Co., Ltd. Composition for forming a conjugated polymer pattern and process of forming a conjugated polymer pattern using the same
US20040188381A1 (en) * 2003-03-25 2004-09-30 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US20040211754A1 (en) * 2003-04-25 2004-10-28 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20040256764A1 (en) * 2003-06-17 2004-12-23 University Of Texas System Board Of Regents Method to reduce adhesion between a conformable region and a pattern of a mold
US20050067379A1 (en) * 2003-09-25 2005-03-31 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050072755A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Single phase fluid imprint lithography method
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US20050187339A1 (en) * 2004-02-23 2005-08-25 Molecular Imprints, Inc. Materials for imprint lithography
US20050192421A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050260848A1 (en) * 2004-05-21 2005-11-24 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20060063387A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy
US20060063277A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US20060063112A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US20060060557A1 (en) * 2004-09-21 2006-03-23 Sreenivasan Sidlgata V Reverse tone patterning on surfaces having surface planarity perturbations
US20060063359A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Patterning substrates employing multi-film layers defining etch differential interfaces
US20060113697A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US20070017899A1 (en) * 2005-07-19 2007-01-25 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US20070051697A1 (en) * 2005-09-02 2007-03-08 Dipietro Richard A Processes and materials for step and flash imprint lithography
US20070066750A1 (en) * 2005-09-02 2007-03-22 Houle Frances A Stabilization of vinyl ether materials
US20070077770A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Etching technique to planarize a multi-layer structure
US20080118872A1 (en) * 2003-03-25 2008-05-22 Molecular Imprints, Inc. Positive Tone Bi-Layer Method
US20080141862A1 (en) * 2003-10-02 2008-06-19 Molecular Imprints, Inc. Single Phase Fluid Imprint Lithography Method
US20080233494A1 (en) * 2007-03-22 2008-09-25 Advanced Micro Devices, Inc. Method for forming a high resolution resist pattern on a semiconductor wafer
US20090037004A1 (en) * 2000-10-12 2009-02-05 Molecular Imprints, Inc. Method and System to Control Movement of a Body for Nano-Scale Manufacturing
US20100080973A1 (en) * 2006-09-18 2010-04-01 Jeong-Man Son Low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US11703764B2 (en) * 2020-09-25 2023-07-18 Khalifa University of Science and Technology Fabrication of high-aspect ratio nanostructures by localized nanospalling effect

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868735A (en) * 1997-03-06 1999-02-09 Scimed Life Systems, Inc. Cryoplasty device and method
DE10131489B4 (de) 2001-06-29 2007-04-12 Infineon Technologies Ag Negativ Resistprozess mit simultaner Entwicklung und chemischer Nachverstärkung von Resiststrukturen
DE10131487B4 (de) 2001-06-29 2005-11-24 Infineon Technologies Ag Negativer Resistprozess mit simultaner Entwicklung und Aromatisierung von Resiststrukturen
DE10147953B4 (de) 2001-09-28 2007-06-06 Infineon Technologies Ag CARL für Bioelektronik: Substratanbindung über isolierende Schicht
JP4410977B2 (ja) * 2002-07-09 2010-02-10 富士通株式会社 化学増幅レジスト材料及びそれを用いたパターニング方法
JP3901645B2 (ja) * 2003-02-17 2007-04-04 松下電器産業株式会社 パターン形成方法
KR100674932B1 (ko) * 2005-01-03 2007-01-26 삼성전자주식회사 Ｐａｇ및 ｔａｇ를 포함하는 화학증폭형 포토레지스트 조성물을 이용한 반도체 소자의 미세 패턴 형성 방법
JP5898985B2 (ja) 2011-05-11 2016-04-06 東京応化工業株式会社 レジストパターン形成方法
TWI575319B (zh) 2011-09-22 2017-03-21 東京應化工業股份有限公司 光阻組成物及光阻圖型之形成方法
KR101936435B1 (ko) 2011-09-22 2019-01-08 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법
JP5933364B2 (ja) * 2011-11-09 2016-06-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5871577B2 (ja) * 2011-11-16 2016-03-01 東京応化工業株式会社 レジストパターン形成方法
JP5871591B2 (ja) * 2011-11-30 2016-03-01 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US11784046B2 (en) * 2020-03-30 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0395917A2 (de) 1989-04-24 1990-11-07 Siemens Aktiengesellschaft Photostrukturierungsverfahren
EP0425142A2 (de) 1989-10-27 1991-05-02 Rohm And Haas Company Positiv arbeitender Photolack und Verfahren zu dessen Herstellung
US5234793A (en) 1989-04-24 1993-08-10 Siemens Aktiengesellschaft Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development
DE4226464A1 (de) 1992-08-10 1994-02-17 Siemens Ag Positivresist
JPH07261393A (ja) 1994-03-25 1995-10-13 Toshiba Corp ネガ型レジスト組成物
EP0874281A1 (de) * 1997-04-23 1998-10-28 Siemens Aktiengesellschaft Chemisch verstärkter Resist
US5851733A (en) * 1994-09-12 1998-12-22 Siemens Aktiengesellschaft Photolithographic pattern generation
EP0919867A2 (de) 1997-11-28 1999-06-02 Siemens Aktiengesellschaft Chemisch verstärkter Resist für die Elektronenstrahllithographie

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0395917A2 (de) 1989-04-24 1990-11-07 Siemens Aktiengesellschaft Photostrukturierungsverfahren
US5234793A (en) 1989-04-24 1993-08-10 Siemens Aktiengesellschaft Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development
EP0425142A2 (de) 1989-10-27 1991-05-02 Rohm And Haas Company Positiv arbeitender Photolack und Verfahren zu dessen Herstellung
DE4226464A1 (de) 1992-08-10 1994-02-17 Siemens Ag Positivresist
JPH07261393A (ja) 1994-03-25 1995-10-13 Toshiba Corp ネガ型レジスト組成物
US5851733A (en) * 1994-09-12 1998-12-22 Siemens Aktiengesellschaft Photolithographic pattern generation
EP0874281A1 (de) * 1997-04-23 1998-10-28 Siemens Aktiengesellschaft Chemisch verstärkter Resist
US6251558B1 (en) * 1997-04-23 2001-06-26 Siemens Aktiengesellschaft Chemically amplified resist
EP0919867A2 (de) 1997-11-28 1999-06-02 Siemens Aktiengesellschaft Chemisch verstärkter Resist für die Elektronenstrahllithographie

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
E. Reichmanis et al.: "Chemically Amplified Resists: Chemistry and Processes", Advanced Materials for Optics and Electronics, vol. 4, 1994, pp. 83-93.
Hiroshi Ito: "Deep-UV resists: Evolution and status", Solid State Technology, Jul. 1996, pp. 164-166, 168, and 170.

Cited By (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050089774A1 (en) * 1999-10-29 2005-04-28 Board Of Regents, The University Of Texas System Method to control the relative position between a body and a surface
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US20040104641A1 (en) * 1999-10-29 2004-06-03 University Of Texas System Method of separating a template from a substrate during imprint lithography
US20040168588A1 (en) * 1999-10-29 2004-09-02 Board Of Regents, The University Of Texas System Method of orientating a template with respect to a substrate in response to a force exerted on the template
US6955868B2 (en) 1999-10-29 2005-10-18 Board Of Regents, The University Of Texas System Method to control the relative position between a body and a surface
US6919152B2 (en) 2000-07-16 2005-07-19 Board Of Regents, The University Of Texas System High resolution overlay alignment systems for imprint lithography
US20040209177A1 (en) * 2000-07-16 2004-10-21 Board Of Regents, The University Of Texas System Dual wavelength method of determining a relative position of a substrate and a template
US6902853B2 (en) 2000-07-16 2005-06-07 Board Of Regents, The University Of Texas System Dual wavelength method of determining a relative position of a substrate and a template
US20040053146A1 (en) * 2000-07-16 2004-03-18 University Of Texas System Board Of Regents, Ut System Method of varying template dimensions to achieve alignment during imprint lithography
US6842229B2 (en) 2000-07-16 2005-01-11 Board Of Regents, The University Of Texas System Imprint lithography template comprising alignment marks
US9223202B2 (en) 2000-07-17 2015-12-29 Board Of Regents, The University Of Texas System Method of automatic fluid dispensing for imprint lithography processes
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US20080199816A1 (en) * 2000-07-17 2008-08-21 The University Of Texas Board Of Regents Method of Automatic Fluid Dispensing for Imprint Lithography Processes
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20020150398A1 (en) * 2000-08-21 2002-10-17 Choi Byung J. Flexure based macro motion translation stage
US8016277B2 (en) 2000-08-21 2011-09-13 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
US20040170771A1 (en) * 2000-10-12 2004-09-02 Board Of Regents, The University Of Texas System Method of creating a dispersion of a liquid on a substrate
US20090037004A1 (en) * 2000-10-12 2009-02-05 Molecular Imprints, Inc. Method and System to Control Movement of a Body for Nano-Scale Manufacturing
US7060324B2 (en) 2000-10-12 2006-06-13 Board Of Regents, The University Of Texas System Method of creating a dispersion of a liquid on a substrate
US20030205657A1 (en) * 2002-05-01 2003-11-06 Voisin Ronald D. Methods of manufacturing a lithography template
US20030215577A1 (en) * 2002-05-16 2003-11-20 Willson Carlton Grant Method and system for fabricating nanoscale patterns in light curable compositions using an electric field
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US20040124566A1 (en) * 2002-07-11 2004-07-01 Sreenivasan Sidlgata V. Step and repeat imprint lithography processes
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field
US20040022888A1 (en) * 2002-08-01 2004-02-05 Sreenivasan Sidlgata V. Alignment systems for imprint lithography
US20040038552A1 (en) * 2002-08-23 2004-02-26 Watts Michael P.C. Method for fabricating bulbous-shaped vias
US20040065976A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040089979A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US7507520B2 (en) * 2002-12-11 2009-03-24 Samsung Electronics Co., Ltd. Composition for forming a conjugated polymer pattern and process of forming a conjugated polymer pattern using the same
US20040112861A1 (en) * 2002-12-11 2004-06-17 Molecular Imprints, Inc. Method for modulating shapes of substrates
US20040180984A1 (en) * 2002-12-11 2004-09-16 Samsung Electronics Co., Ltd. Composition for forming a conjugated polymer pattern and process of forming a conjugated polymer pattern using the same
US20040112153A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Method and system for determining characteristics of substrates employing fluid geometries
US20040170770A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7670953B2 (en) 2003-03-25 2010-03-02 Molecular Imprints, Inc. Positive tone bi-layer method
US20040188381A1 (en) * 2003-03-25 2004-09-30 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US20080118872A1 (en) * 2003-03-25 2008-05-22 Molecular Imprints, Inc. Positive Tone Bi-Layer Method
US20040211754A1 (en) * 2003-04-25 2004-10-28 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20040256764A1 (en) * 2003-06-17 2004-12-23 University Of Texas System Board Of Regents Method to reduce adhesion between a conformable region and a pattern of a mold
US20050067379A1 (en) * 2003-09-25 2005-03-31 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20080141862A1 (en) * 2003-10-02 2008-06-19 Molecular Imprints, Inc. Single Phase Fluid Imprint Lithography Method
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050072755A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Single phase fluid imprint lithography method
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US20050187339A1 (en) * 2004-02-23 2005-08-25 Molecular Imprints, Inc. Materials for imprint lithography
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US20050192421A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7186656B2 (en) 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US20050260848A1 (en) * 2004-05-21 2005-11-24 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20060063387A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy
US20060063277A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US7252777B2 (en) 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US20060060557A1 (en) * 2004-09-21 2006-03-23 Sreenivasan Sidlgata V Reverse tone patterning on surfaces having surface planarity perturbations
US7205244B2 (en) 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US20060063359A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Patterning substrates employing multi-film layers defining etch differential interfaces
US20060063112A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7041604B2 (en) 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7241395B2 (en) 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
US20060113697A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US7357876B2 (en) 2004-12-01 2008-04-15 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US20070017899A1 (en) * 2005-07-19 2007-01-25 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US7256131B2 (en) 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US20070066750A1 (en) * 2005-09-02 2007-03-22 Houle Frances A Stabilization of vinyl ether materials
US20090092767A1 (en) * 2005-09-02 2009-04-09 Frances Anne Houle Stabilization of vinyl ether materials
US7488771B2 (en) 2005-09-02 2009-02-10 International Business Machines Corporation Stabilization of vinyl ether materials
US20070051697A1 (en) * 2005-09-02 2007-03-08 Dipietro Richard A Processes and materials for step and flash imprint lithography
US8637602B2 (en) 2005-09-02 2014-01-28 International Business Machines Corporation Stabilization of vinyl ether materials
US7419611B2 (en) 2005-09-02 2008-09-02 International Business Machines Corporation Processes and materials for step and flash imprint lithography
US20080169268A1 (en) * 2005-09-02 2008-07-17 Dipietro Richard Anthony Processes and materials for step and flash imprint lithography
US8128832B2 (en) 2005-09-02 2012-03-06 International Business Machines Corporation Processes and materials for step and flash imprint lithography
US7259102B2 (en) 2005-09-30 2007-08-21 Molecular Imprints, Inc. Etching technique to planarize a multi-layer structure
US20070077770A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Etching technique to planarize a multi-layer structure
US8367190B2 (en) * 2006-09-18 2013-02-05 Lg Chem, Ltd. At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same
US20100080973A1 (en) * 2006-09-18 2010-04-01 Jeong-Man Son Low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same
US8586269B2 (en) * 2007-03-22 2013-11-19 Globalfoundries Inc. Method for forming a high resolution resist pattern on a semiconductor wafer
US20080233494A1 (en) * 2007-03-22 2008-09-25 Advanced Micro Devices, Inc. Method for forming a high resolution resist pattern on a semiconductor wafer
US11703764B2 (en) * 2020-09-25 2023-07-18 Khalifa University of Science and Technology Fabrication of high-aspect ratio nanostructures by localized nanospalling effect

Also Published As

Publication number Publication date
KR100573672B1 (ko) 2006-04-25
EP1247141A1 (de) 2002-10-09
TW554247B (en) 2003-09-21
WO2001042860A1 (de) 2001-06-14
US20030008240A1 (en) 2003-01-09
DE19958966A1 (de) 2001-06-13
KR20030023603A (ko) 2003-03-19

Similar Documents

Publication Publication Date Title
US6703190B2 (en) Method for producing resist structures
US6740475B2 (en) Method for structuring a photoresist layer
US6835528B2 (en) Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties
KR100732929B1 (ko) 원자외선용 포토레지스트 조성물 및 그것의 방법
JP4410977B2 (ja) 化学増幅レジスト材料及びそれを用いたパターニング方法
US5532113A (en) Method of making microelectronic structures utilzing photoresists containing C3 C12 water soluble sugar crosslinking agents
KR20070007067A (ko) 포토레지스트 조성물
US6746828B2 (en) Process for structuring a photoresist layer
JP3120402B2 (ja) 不活性化芳香族アミン化合物を含むフォトレジスト組成物
US6887653B2 (en) Method for structuring a photoresist layer
US6770423B2 (en) Negative resist process with simultaneous development and silylation
JPH0645246A (ja) レジスト被覆膜、被覆膜材料およびその形成方法とそれを用いたパターン形成方法および半導体装置
US6806027B2 (en) Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivatives
US6998215B2 (en) Negative resist process with simultaneous development and chemical consolidation of resist structures
US5648195A (en) Radiation-sensitive resist composition comprising a diazoketone
US6800407B2 (en) Method for experimentally verifying imaging errors in photomasks
US6746821B2 (en) Method of structuring a photoresist layer
US6746827B2 (en) Process for structuring a photoresist layer
US6946236B2 (en) Negative resist process with simultaneous development and aromatization of resist structures
US20030162411A1 (en) Polymer material having a low glass transition temperature for use in chemically amplified photoresists for semiconductor production
US7081326B2 (en) Negative photoresist and method of using thereof
JPH03179355A (ja) 放射線感応性組成物及びそれを用いたパターン形成方法
KR100546110B1 (ko) 포토레지스트 가교제 및 이를 함유하는 포토레지스트 조성물
US20030087182A1 (en) Photoresists with reaction anchos for chemical consolidation of resist structures for exposures at 157 nm
JP2002072503A (ja) レジストパターンの形成方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: INFINEON TECHNOLOGIES, AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ELIAN, KLAUS;HIEN, STEFAN;RICHTER, ERNST-CHRISTIAN;AND OTHERS;REEL/FRAME:014939/0909;SIGNING DATES FROM 20020623 TO 20020827

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: QIMONDA AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:023773/0001

Effective date: 20060425

Owner name: QIMONDA AG,GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:023773/0001

Effective date: 20060425

FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: INFINEON TECHNOLOGIES AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QIMONDA AG;REEL/FRAME:035623/0001

Effective date: 20141009

AS Assignment

Owner name: POLARIS INNOVATIONS LIMITED, IRELAND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:036396/0646

Effective date: 20150708

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20160309