US6552369B2 - Light emitting diode and fabricating method thereof - Google Patents
Light emitting diode and fabricating method thereof Download PDFInfo
- Publication number
- US6552369B2 US6552369B2 US10/003,923 US392301A US6552369B2 US 6552369 B2 US6552369 B2 US 6552369B2 US 392301 A US392301 A US 392301A US 6552369 B2 US6552369 B2 US 6552369B2
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- United States
- Prior art keywords
- layer
- bragg reflector
- oxidizable
- light emitting
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 39
- 238000002310 reflectometry Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 238000005253 cladding Methods 0.000 description 11
- 229910016909 AlxOy Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Definitions
- the present invention relates to a light emitting diode (LED) chip structure and a fabricating method thereof, and more particularly relates to a LED chip structure using a Bragg reflector layer with high reflectivity for increasing the brightness of an LED.
- LED light emitting diode
- the conventional AlGaInP light emitting diode has a double heterostructure (DH), and is composed of an n-type (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P lower cladding layer 4 having an Al composition of about 0.7 to about 1.0 and is formed on an n-type GaAs substrate 3 ; an (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P active layer 5 ; a p-type (Al x Ga 1 ⁇ x )ln0.5P upper cladding layer 6 having an Al composition of about 0.7 to about 1.0; and a p-type high energy gap GaP or AlGaAs window layer 7 .
- DH double heterostructure
- the emitting wavelength from the conventional LED structure can be varied by changing the composition of the active layer 5 , and the wavelength thereof can be changed from 650 nm of red light to 555 nm of pure green light.
- one disadvantage of the conventional light emitting diode is that, when the light generated in the active layer is emitted deep into the GaAs substrate, the light is easily absorbed by the GaAs substrate since the GaAs substrate has a smaller energy gap. Accordingly, an LED with high efficiency cannot be fabricated.
- Kish et al. disclosed a wafer-bonded transparent-substrate (TS) (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P/Gap light emitting diode [Appl. Phys Lett. vol. 64, no. 21, 2839 (1994);” Very High-Efficiency Semiconductor Wafer-Bonded Transparent-Substrate (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P/Gap”], wherein the TS AlGaInP LED is fabricated by growing a very thick (about 50 ⁇ m) p-type GaP window layer with the method of hydride vapor phase epitaxy (HVPE) at a temperature above the eutectic point of AuSn solder.
- HVPE hydride vapor phase epitaxy
- the n-type GaAs substrate is selectively removed by using conventional chemical etching techniques.
- the exposed n-type layers are subsequently bonded to an n-type GaP substrate of 8-10 mil in thickness.
- the resulting TS AlGahiP LED exhibits a two-fold improvement in light output in comparison with the absorbing substrate (AS) AlGaInP LED.
- AS absorbing substrate
- the fabrication process of TS AlGahnP LED is too complicated. Therefore, it is difficult to manufacture the TS AlGaInP LED with high yield and low cost.
- both the p-electrode and the n-electrode are formed on the same side, so that the chip size cannot be decreased. Therefore, the chip size is larger than the conventional LED chip that has a p-electrode on one side and a n-electrode on the other side. Thus, this type of LED chip can hardly satisfy the trend of package size being moved toward miniaturization.
- the present invention provides a light emitting diode structure and a fabricating method thereof to solve the disadvantages of the conventional light emitting diodes.
- This invention can prevent emitted light from being absorbed by a substrate by using a high reflectivity Bragg reflector layer.
- the present invention provides a Bragg reflector layer by forming a high aluminum-containing AlGaAs/AlGaInP layer or a high aluminum-containing AlGaAs/low aluminum-containing AlGaAs layer on the substrate before the epitaxial structure of the light emitting diode is formed. Because the high aluminum-containing AlGaAs has the featuree of easy oxidation, the high aluminum-containing AlGaAs can be oxidized to form an oxide having a lower refraction index. Thus, the reflectivity and high reflection zones of the oxidized Bragg reflector can be much larger than those of the conventional DBR.
- the invention provides a structure of a light emitting diode, comprising: a substrate having a first electrode on a first surface, an epitaxial structure forming on a second surface, wherein the epitaxial structure is formed by a plurality of III-V compound semiconductor epitaxial layers including an active layer and a Bragg reflector layer sandwiched between the active layer and the substrate, and a portion of the Bragg reflector layer is oxidized, and a second electrode formed on the epitaxial structure.
- this invention provides a method for forming a light emitting diode, comprising the steps of: providing a substrate; forming an epitaxial structure on a first surface of the substrate, wherein the epitaxial structure is formed by a plurality of III-V compound semiconductor epitaxial layers including an active layer and a Bragg reflector layer sandwiched between the active layer and the substrate; conducting a treatment of oxidation for forming a high reflectivity and a current insulating layer in a portion of the Bragg reflector layer; forming a first electrode on a second surface; and forming a second electrode on the epitaxial structure.
- FIG. 1 is a schematic diagram showing a conventional structure of a light emitting diode
- FIG. 2 is a schematic diagram showing an epitaxial structure of a light emitting diode structure of the present invention
- FIGS. 3A and 3B illustrate the first embodiment of the present invention showing the top view and the cross sectional view of the light emitting diode
- FIG. 4 shows the reflectivity and the injected wavelength onto the Bragg reflector 25 in the present invention and prior art
- FIGS. 5A and 5B illustrate the second embodiment of the present invention showing the top view and the cross sectional view taking along line V-V in FIG. 5A;
- FIG. 6 shows the relationship between the reflectivity and the pair number of the Bragg reflector layer in the present invention and prior art.
- the present invention discloses a light emitting diode structure and a fabricating method thereof, and is described in details as follows.
- the epitaxial structure of the light emitting diode is composed of an n-type GaAs substrate 20 ; a Bragg reflector layer 19 ; an n-type (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P lower cladding layer 16 with the Al composition of about 0 ⁇ 0.45; a (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P with the Al composition of about 0 ⁇ 0.45; a p-type (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P upper cladding layer 12 ; and a p-type ohmic contact layer 10 .
- the ratio of the compound such as (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P is merely shown as an example, as the present invention is not limited thereto.
- the structure of the AlGaInP active layer 14 of the invention could be a DH structure or a multiple quantum well (MQW) structure.
- the DH structure comprises the n-type (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P lower cladding layer 16 with the Al composition of about 0.5 ⁇ 1, a (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P active layer 14 and a p-type (Al x Ga 1 ⁇ x ) 0.5 In 0.5 P upper cladding layer 12 with the Al composition of about 0 . 5 ⁇ x ⁇ 1 , as shown in FIG. 1 .
- the Bragg reflector layer 19 is sandwiched between the n-type GaAs substrate 20 and the lower cladding layer 16 .
- the Bragg reflector layer 19 comprises a plurality of stacked structure of high aluminum-containing AlGaAs/AlGaInP layers or high aluminum-containing AlGaAs/low aluminum-contained AlGaInP layers.
- the oxide formed is an insulator with a low refraction index, and the Bragg reflector, which is formed as described above, can reflect the emitted light generated by the active layer 14 .
- the thickness of each layer can be designed to equal ) ⁇ /4 n, wherein the ⁇ is the wavelength of the emitted light and the n is the refractive index.
- the first embodiment of the present invention shows the top view and the cross sectional view of the light emitting diode.
- the Bragg reflector layer 19 comprises three pairs of high aluminum-containing AlGaAs/AlGaInP 19 c layer. Due to the feature of easy oxidization of the high aluminum-containing AlGaAs layer, a treatment of oxidation is processed onto the high aluminum-containing AlGaAs layer. With the temperature controlled between 300 and 600 degrees.
- an Al x O y layer 19 a is formed on the lateral portion of the high aluminum-containing AlGaAs layer toward the central portion, and a non-oxidized region of high aluminum-containing AlGaAs layer 19 b is located in the center.
- an n-electrode 40 and a p-electrode 30 are respectively formed on the n-type GaAs substrate 20 and the p type ohmic contact layer 10 .
- the refraction index of the Al x O y layer 19 a is 1.6, which is different from the reflective index of low aluminum-containing AlGaAs or AlGaInP of about higher than 3. Consequently, the wavelength reflected by the Bragg reflector layer 19 can cover almost the entire visible spectrum between 500 ⁇ 800 nm, as shown in FIG. 4 .
- the Bragg reflector layer 19 can thus reflect almost 100% of the emitted light generated by the active 14 .
- the Bragg reflector layer can limit the current within the non-oxidized regions of the high aluminum-containing AlGaAs layer 19 b .
- the current in the active layer 14 is thus uniform. Accordingly, the light intensity can be greatly increased.
- the Bragg reflector layer shown in this embodiment is sandwiched between the n-type GaAs substrate and the lower cladding layer, but the present invention is not limited thereto.
- the Bragg reflector layer can also be located in the lower cladding layer.
- the second embodiment of the present invention shows the top view of the light emitting diode and the cross sectional view of the light emitting diode taken along the line V—V of FIG. 5 A.
- the Bragg reflector layer 19 comprises several pairs of high aluminum-containing AlGaAs/AIGaInP or high aluminum-containing AlGaAs/low aluminum-containing AlGaAs layer 19 c .
- the present invention forms a cross concavity 25 by etching to the n-type GaAs substrate 20 for separating four portions of Bragg reflector layer 19 .
- the reflectivity of the conventional Bragg reflector layer comprising an AlGaInP/AlInP layer is 80% only in the regions of 550 ⁇ 600 nm in wavelength, and is poor in the other regions.
- the reflectivity of the Bragg reflector layer of the present invention comprising a high aluminum-containing AlGaAs/AlGaInP layer or an high aluminum-containing AlGaAs/low aluminum-containing AlGaInP, is almost 100% in the region of 500 ⁇ 800 nm in wavelength.
- the Bragg reflector layer of the present invention thus has a higher reflectivity.
- the reflectivity and the number of pairs in the Bragg reflector layer in the present invention and those of the prior art are shown.
- 4 pairs of high aluminum-containing AlGaAs/AlGaInP layers or high aluminum-containing AlGaAs/low aluminum-containing AlGaInP layers of the Bragg reflector layer can obtain a high reflectivity of about 100%.
- 20 pairs of AlGaInP/AlInP layers of the conventional Bragg reflector can only obtain a poor reflectivity of 80%.
- the structure of the present Bragg reflector layer is thus simpler and the reflectivity is higher than the conventional Bragg reflector layer.
- the present invention not only can be applied to the AlGaInP light emitting diode but also can be applied further to all light emitting diodes that can emit visible light.
- the present invention provides a Bragg reflector layer, which is an high aluminum-containing AlGaAs/AlGaInP layer or a high aluminum-containing AlGaAs/low aluminum-containing AlGaAs, formed on the substrate before the epitaxial structure of the light emitting diode. Due to the feature of easy oxidization of the high aluminum-containing AlGaAs and the higher refraction index of the oxide, the wavelength reflected by the Bragg reflector layer can cover almost the entire visible spectrum.
- the Bragg reflector layer can limit the current within the oxidized regions of high aluminum-containing AlGaAs layer.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW089123252A TW474033B (en) | 2000-11-03 | 2000-11-03 | LED structure and the manufacturing method thereof |
TW89123252A | 2000-11-03 | ||
TW89123252 | 2000-11-03 |
Publications (2)
Publication Number | Publication Date |
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US20020055218A1 US20020055218A1 (en) | 2002-05-09 |
US6552369B2 true US6552369B2 (en) | 2003-04-22 |
Family
ID=21661797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/003,923 Expired - Lifetime US6552369B2 (en) | 2000-11-03 | 2001-10-31 | Light emitting diode and fabricating method thereof |
Country Status (4)
Country | Link |
---|---|
US (1) | US6552369B2 (ja) |
JP (1) | JP3523632B2 (ja) |
DE (1) | DE10153321B4 (ja) |
TW (1) | TW474033B (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
US20080088932A1 (en) * | 2006-10-11 | 2008-04-17 | Samsung Electro-Mechanics Co., Ltd. | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US7622746B1 (en) | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
US20100140635A1 (en) * | 2008-12-08 | 2010-06-10 | Cree, Inc. | Composite high reflectivity layer |
US20100140636A1 (en) * | 2008-12-08 | 2010-06-10 | Matthew Donofrio | Light Emitting Diode with Improved Light Extraction |
US20110041903A1 (en) * | 2009-08-20 | 2011-02-24 | Integrated Photovoltaic, Inc. | Photovoltaic Cell on Substrate |
US20110049546A1 (en) * | 2009-09-02 | 2011-03-03 | Cree, Inc. | high reflectivity mirrors and method for making same |
US20110114969A1 (en) * | 2009-11-13 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US8963183B2 (en) | 2010-07-28 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode having distributed Bragg reflector |
US9142715B2 (en) | 2010-06-24 | 2015-09-22 | Seoul Viosys Co., Ltd. | Light emitting diode |
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TWI222756B (en) * | 2002-11-12 | 2004-10-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method of making the same |
JP4605291B2 (ja) * | 2008-06-03 | 2011-01-05 | 住友電気工業株式会社 | AlxGa(1−x)As基板、赤外LED用のエピタキシャルウエハ、赤外LED、AlxGa(1−x)As基板の製造方法、赤外LED用のエピタキシャルウエハの製造方法および赤外LEDの製造方法 |
JP2010251531A (ja) * | 2009-04-16 | 2010-11-04 | Rohm Co Ltd | 半導体発光素子 |
JP6056154B2 (ja) * | 2011-07-21 | 2017-01-11 | 富士ゼロックス株式会社 | 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置 |
JP6123559B2 (ja) * | 2013-08-07 | 2017-05-10 | 富士ゼロックス株式会社 | 発光サイリスタ、自己走査型発光素子アレイ、光書込みヘッドおよび画像形成装置、発光サイリスタおよび自己走査型発光素子アレイの製造方法 |
CN116632132A (zh) * | 2020-11-19 | 2023-08-22 | 厦门三安光电有限公司 | Dbr结构、led芯片、半导体发光器件及制造方法及显示面板 |
CN114583026B (zh) * | 2022-05-05 | 2022-11-29 | 徐州立羽高科技有限责任公司 | 一种半导体深紫外光源结构 |
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2000
- 2000-11-03 TW TW089123252A patent/TW474033B/zh not_active IP Right Cessation
-
2001
- 2001-10-29 DE DE10153321A patent/DE10153321B4/de not_active Expired - Lifetime
- 2001-10-31 US US10/003,923 patent/US6552369B2/en not_active Expired - Lifetime
- 2001-11-05 JP JP2001339747A patent/JP3523632B2/ja not_active Expired - Lifetime
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Cited By (25)
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---|---|---|---|---|
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
US8324652B1 (en) | 2006-03-17 | 2012-12-04 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
US7622746B1 (en) | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
US20080088932A1 (en) * | 2006-10-11 | 2008-04-17 | Samsung Electro-Mechanics Co., Ltd. | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US7483212B2 (en) | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US20100140635A1 (en) * | 2008-12-08 | 2010-06-10 | Cree, Inc. | Composite high reflectivity layer |
US20100140636A1 (en) * | 2008-12-08 | 2010-06-10 | Matthew Donofrio | Light Emitting Diode with Improved Light Extraction |
US8598609B2 (en) | 2008-12-08 | 2013-12-03 | Cree, Inc. | Composite high reflectivity layer |
US8575633B2 (en) | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
US7915629B2 (en) | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
US20110169036A1 (en) * | 2008-12-08 | 2011-07-14 | Cree, Inc. | Composite high reflectivity layer |
US8476660B2 (en) * | 2009-08-20 | 2013-07-02 | Integrated Photovoltaics, Inc. | Photovoltaic cell on substrate |
US20110041903A1 (en) * | 2009-08-20 | 2011-02-24 | Integrated Photovoltaic, Inc. | Photovoltaic Cell on Substrate |
US9362459B2 (en) | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
US20110049546A1 (en) * | 2009-09-02 | 2011-03-03 | Cree, Inc. | high reflectivity mirrors and method for making same |
US8907360B2 (en) * | 2009-11-13 | 2014-12-09 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US9324919B2 (en) | 2009-11-13 | 2016-04-26 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed Bragg reflector and method of fabricating the same |
US9343631B2 (en) | 2009-11-13 | 2016-05-17 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US20110114969A1 (en) * | 2009-11-13 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector |
US9577157B2 (en) | 2009-11-13 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed Bragg reflector and method of fabricating the same |
US10128306B2 (en) | 2009-11-13 | 2018-11-13 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US10141480B2 (en) | 2009-11-13 | 2018-11-27 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed Bragg reflector and method of fabricating the same |
US9142715B2 (en) | 2010-06-24 | 2015-09-22 | Seoul Viosys Co., Ltd. | Light emitting diode |
US8963183B2 (en) | 2010-07-28 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode having distributed Bragg reflector |
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JP2002185038A (ja) | 2002-06-28 |
JP3523632B2 (ja) | 2004-04-26 |
DE10153321A1 (de) | 2002-08-22 |
DE10153321B4 (de) | 2006-10-26 |
US20020055218A1 (en) | 2002-05-09 |
TW474033B (en) | 2002-01-21 |
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