US6368469B1 - Coils for generating a plasma and for sputtering - Google Patents

Coils for generating a plasma and for sputtering Download PDF

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Publication number
US6368469B1
US6368469B1 US08/851,946 US85194697A US6368469B1 US 6368469 B1 US6368469 B1 US 6368469B1 US 85194697 A US85194697 A US 85194697A US 6368469 B1 US6368469 B1 US 6368469B1
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United States
Prior art keywords
coil
target
workpiece
deposited
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/851,946
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English (en)
Inventor
Jaim Nulman
Sergio Edelstein
Mani Subramani
Zheng Xu
Howard Grunes
Avi Tepman
John Forster
Praburam Gopalraja
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Applied Materials Inc
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Applied Materials Inc
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Priority to US08/851,946 priority Critical patent/US6368469B1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: XU, ZHENG, NULMAN, JAIM, GOPALRAJA, PRABURAM, TEPMAN, AVI, SUBRAMANI, ANANTHA, FORSTER, JOHN, GRUNES, HOWARD, EDELSTEIN, SERGIO
Priority to US10/052,951 priority patent/US6783639B2/en
Application granted granted Critical
Publication of US6368469B1 publication Critical patent/US6368469B1/en
Priority to US10/896,155 priority patent/US20040256217A1/en
Priority to US11/229,139 priority patent/US8398832B2/en
Priority to US13/776,492 priority patent/US20130168232A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Definitions

  • the present invention relates to plasma generators, and more particularly, to a method and apparatus for generating a plasma to sputter deposit a layer of material in the fabrication of semiconductor devices.
  • RF generated plasmas have become convenient sources of energetic ions and activated atoms which can be employed in a variety of semiconductor device fabrication processes including surface treatments, depositions, and etching processes.
  • a plasma is produced in the vicinity of a sputter target material which is negatively biased. Ions created within the plasma impact the surface of the target to dislodge, i.e., “sputter” material from the target. The sputtered materials are then transported and deposited on the surface of the semiconductor wafer.
  • FIG. 1 is a perspective, partial cross-sectional view of a plasma generating chamber in accordance with one embodiment of the present invention.
  • FIG. 8 is a graph depicting the effect on deposition uniformity of the ratio of the RF power applied to the coil relative to the DC power bias of the target.
  • FIG. 11 illustrates a plurality of coil ring feedthrough standoffs for a plasma generating chamber having two multiple ring coils in which the rings of the two coils are interleaved.
  • FIG. 12 is a schematic diagram of the electrical interconnections to the plasma generating chamber of FIG. 11 .
  • a plasma generator in accordance with a first embodiment of the present invention comprises a substantially cylindrical plasma chamber 100 which is received in a vacuum chamber 102 (shown schematically in FIG. 2 ).
  • the plasma chamber 100 of this embodiment has a single turn coil 104 which is carried internally by a shield 106 .
  • the shield 106 protects the interior walls (not shown) of the vacuum chamber 102 from the material being deposited within the interior of the plasma chamber 100 .
  • RF power is applied to the coil 104 by feedthroughs (not shown) which are supported by insulating feedthrough standoffs 124 .
  • the feedthrough standoffs 124 like the coil support standoffs 122 , permit repeated deposition of conductive material from the target onto the feedthrough standoff 124 without the formation of a conducting path which could short the coil 104 to the shield 106 .
  • the coil feedthrough standoff 124 has an internal labyrinth structure somewhat similar to that of the coil standoff 122 to prevent the formation of a short between the coil 104 and the wall 140 of the shield.
  • the dark space shield 130 is a closed continuous ring of titanium (where titanium deposition is occurring in the chamber 100 ) or stainless steel having a generally inverted frusto-conical shape.
  • the dark space shield extends inward toward the center of plasma chamber 100 so as to overlap the coil 104 by a distance of 1 ⁇ 4 inch. It is recognized, of course, that the amount of overlap can be varied depending upon the relative size and placement of the coil and other factors. For example, the overlap may be increased to increase the shielding of the coil 104 from the sputtered material but increasing the overlap could also further shield the target from the plasma which may be undesirable in some applications.
  • the coil 104 may be placed in a recessed coil chamber (not shown) to further protect the coil and reduce particle deposits on the workpiece.
  • each turn of the coil may be implemented with a flat, open-ended annular ring such as that illustrated at 200 in FIG. 3 .
  • a flat, open-ended annular ring such as that illustrated at 200 in FIG. 3 .
  • Such an arrangement is particularly advantageous for multiple turn coils.
  • the advantage of a multiple turn coil is that the required current levels can be substantially reduced for a given RF power level.
  • multiple turn coils tend to be more complicated and hence most costly and difficult to clean as compared to single turn coils.
  • a three turn helical coil of titanium and its associated supporting structure could be quite expensive.
  • the cost of manufacture of a multiple turn coil can be substantially reduced by utilizing several such flat rings 200 a - 200 c to form a multiple turn coil 104 ′ as illustrated in FIG. 4 .
  • an RF waveguide 220 a external to the shield wall is coupled by the RF feedthrough in feedthrough standoff 206 a to one end of the lowest coil ring 200 a .
  • the other end of the coil ring 200 a is coupled by the RF feedthrough in feedthrough standoff 208 a to another external RF waveguide 220 b which is coupled by the RF feedthrough in feedthrough standoff 206 b to one end of the middle coil ring 200 b .
  • the other end of the coil ring 200 b is coupled by the RF feedthrough in feedthrough standoff 208 b to another external RF waveguide 220 c which is coupled by the RF feedthrough in feedthrough standoff 206 c to one end of the top coil ring 200 c .
  • the relative amounts of sputtering between the coil and the target may also be a function of the DC biasing of the coil 104 relative to that of the target 110 .
  • This DC biasing of the coil 104 may be adjusted in a variety of methods.
  • the matching network 302 typically includes inductors and capacitors. By varying the capacitance of one or more capacitors of the matching network, the DC biasing of the coil 104 might be adjusted to achieve the desired level of uniformity.
  • the RF power to the coil and the DC biasing of the coil 104 may have separate adjustment inputs to achieve the desired results.
  • An alternative power arrangement could include two RF generators operated at slightly different frequencies.
  • the wafer to target space is preferably about 140 mm but can range from about 1.5′′ to 8′′.
  • satisfactory coverage i.e., the ratio of aperture bottom deposition thickness to field deposition thickness
  • a coil diameter of about 11 1 ⁇ 2 inches spaced from the target by a distance of about 2.9 inches. It has been found that increasing the diameter of the coil which moves the coil away from the workpiece edge has an adverse effect on bottom coverage.
  • decreasing the coil diameter to move the coil closer to the wafer edge can adversely effect layer uniformity. It is believed that decreasing the coil diameter causes the coil to be more closely aligned with the target resulting in substantial deposition of material from the target onto the coil which in turn can adversely effect the uniformity of material being sputtered from the coil.
  • the RF power levels for the coil 104 ′′ may be lower as compared to those for the coil 104 .
  • a suitable power range for the coil 104 ′′ is 1.5 to 3.5 kW RF.
  • the power ranges for the primary target 110 and the secondary target, i.e., the coil 310 are 2-5 kW DC and 1-3 kW DC, respectively. Of course, values will vary depending upon the particular application.
  • FIGS. 11 and 12 show yet another alternative embodiment, which includes a multiple turn RF coil and a multiple ring secondary target in which the rings of the target are interleaved with the turns of the RF coil.
  • the RF coil of FIG. 12 like the coil 104 ′ of FIGS. 4-6, is formed of flat rings 200 a - 200 c which are electrically connected together in series by RF feedthroughs which pass through the RF feedthrough standoffs 206 a - 206 c and 208 a - 208 c and external waveguides 220 a - 220 d to the RF source and RF ground.
  • the negatively biasing DC power source 312 external to the shield wall is coupled by an external strap 330 a to a DC feedthrough in feedthrough standoff 206 d to the lowest ring 400 a of the second sputtering target.
  • the target ring 400 a is also coupled by the DC feedthrough in feedthrough standoff 206 d to another external DC strap 330 b which is coupled by the DC feedthrough in feedthrough standoff 206 e to the middle target ring 400 b .
  • the secondary sputtering targets 310 and 400 a - 400 c have been described as being fabricated from flat rings 400 , it should be appreciated that the sputtering secondary targets may be fabricated from ribbon and tubular materials as well as in a variety of other shapes and sizes including cylinders and segments of cylinders. However, it is preferred that the secondary targets be shaped so as to be symmetrical about the axis of the substrate and encircle the interior of the chamber at the periphery of the plasma.
  • the secondary target material should be a solid, conductive material and may be of the same type or a different type of conductive material than that of the primary target 110 .
  • the biasing of the primary and secondary targets has been described as DC biasing, it should be appreciated that in some applications, AC or RF biasing of one or both of the primary and secondary targets may be appropriate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
US08/851,946 1996-05-09 1997-05-06 Coils for generating a plasma and for sputtering Expired - Lifetime US6368469B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US08/851,946 US6368469B1 (en) 1996-05-09 1997-05-06 Coils for generating a plasma and for sputtering
US10/052,951 US6783639B2 (en) 1996-05-09 2002-01-17 Coils for generating a plasma and for sputtering
US10/896,155 US20040256217A1 (en) 1996-05-09 2004-07-20 Coils for generating a plasma and for sputtering
US11/229,139 US8398832B2 (en) 1996-05-09 2005-09-15 Coils for generating a plasma and for sputtering
US13/776,492 US20130168232A1 (en) 1996-05-09 2013-02-25 Coils for generating a plasma and for sputtering

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64718496A 1996-05-09 1996-05-09
US64409696A 1996-05-10 1996-05-10
US68033596A 1996-07-10 1996-07-10
US08/851,946 US6368469B1 (en) 1996-05-09 1997-05-06 Coils for generating a plasma and for sputtering

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US68033596A Continuation 1996-05-09 1996-07-10

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US10/052,951 Continuation US6783639B2 (en) 1996-05-09 2002-01-17 Coils for generating a plasma and for sputtering

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US6368469B1 true US6368469B1 (en) 2002-04-09

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US08/851,946 Expired - Lifetime US6368469B1 (en) 1996-05-09 1997-05-06 Coils for generating a plasma and for sputtering
US10/052,951 Expired - Lifetime US6783639B2 (en) 1996-05-09 2002-01-17 Coils for generating a plasma and for sputtering
US10/896,155 Abandoned US20040256217A1 (en) 1996-05-09 2004-07-20 Coils for generating a plasma and for sputtering

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US10/896,155 Abandoned US20040256217A1 (en) 1996-05-09 2004-07-20 Coils for generating a plasma and for sputtering

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US (3) US6368469B1 (ja)
EP (1) EP0807954A1 (ja)
JP (4) JP4553992B2 (ja)
KR (1) KR100547404B1 (ja)
SG (1) SG74011A1 (ja)

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US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US20040018740A1 (en) * 2002-03-18 2004-01-29 Applied Materials, Inc. Flat style coil for improved precision etch uniformity
US20040026233A1 (en) * 2002-08-08 2004-02-12 Applied Materials, Inc. Active magnetic shielding
US6695954B2 (en) * 1997-08-07 2004-02-24 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US20040094402A1 (en) * 2002-08-01 2004-05-20 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6783639B2 (en) * 1996-05-09 2004-08-31 Applied Materials Coils for generating a plasma and for sputtering
US6824658B2 (en) 2001-08-30 2004-11-30 Applied Materials, Inc. Partial turn coil for generating a plasma
US20050263389A1 (en) * 2004-05-26 2005-12-01 Tza-Jing Gung Variable quadruple electromagnet array in plasma processing
US20060070875A1 (en) * 1996-05-09 2006-04-06 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US20060213769A1 (en) * 2005-03-22 2006-09-28 Eal Lee Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
US20080178801A1 (en) * 2007-01-29 2008-07-31 Applied Materials, Inc. Process kit for substrate processing chamber
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
US20100078312A1 (en) * 2008-09-26 2010-04-01 Tango Systems, Inc. Sputtering Chamber Having ICP Coil and Targets on Top Wall
US20100155223A1 (en) * 2004-05-26 2010-06-24 Applied Materials, Inc. Electromagnet array in a sputter reactor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US8668816B2 (en) 1999-10-08 2014-03-11 Applied Materials Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
RU2554085C2 (ru) * 2013-09-20 2015-06-27 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Способ нагрева электродов и создания самостоятельного дугового разряда с поджигом от тонкой металлической проволочки в свободном пространстве в магнитном поле
US9272882B2 (en) 2009-12-18 2016-03-01 Otis Elevator Company Detection of people relative to a passenger conveyor with a capacitive sensor
RU2577040C2 (ru) * 2014-07-29 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Магнитный гаситель самостоятельного дугового разряда
US20160099130A1 (en) * 2014-10-01 2016-04-07 Nissin Electric Co., Ltd. Antenna for plasma generation and plasma processing device having the same
US20170253959A1 (en) * 2016-03-05 2017-09-07 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
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US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN116997068A (zh) * 2023-09-25 2023-11-03 湘潭宏大真空技术股份有限公司 用于磁控溅射镀膜的等离子发生器及磁控溅射镀膜机
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