WO2004066360A2 - Apparatus and methods for ionized deposition of a film or thin layer - Google Patents
Apparatus and methods for ionized deposition of a film or thin layer Download PDFInfo
- Publication number
- WO2004066360A2 WO2004066360A2 PCT/US2004/001798 US2004001798W WO2004066360A2 WO 2004066360 A2 WO2004066360 A2 WO 2004066360A2 US 2004001798 W US2004001798 W US 2004001798W WO 2004066360 A2 WO2004066360 A2 WO 2004066360A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coil
- boss
- assembly
- coil assembly
- metal
- Prior art date
Links
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- VDZMENNHPJNJPP-UHFFFAOYSA-N boranylidyneniobium Chemical compound [Nb]#B VDZMENNHPJNJPP-UHFFFAOYSA-N 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 description 1
- AUVPWTYQZMLSKY-UHFFFAOYSA-N boron;vanadium Chemical compound [V]#B AUVPWTYQZMLSKY-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- SZMZREIADCOWQA-UHFFFAOYSA-N chromium cobalt nickel Chemical compound [Cr].[Co].[Ni] SZMZREIADCOWQA-UHFFFAOYSA-N 0.000 description 1
- QXWGVGIOMAUVTC-UHFFFAOYSA-N chromium cobalt platinum tantalum Chemical compound [Cr][Pt][Co][Ta] QXWGVGIOMAUVTC-UHFFFAOYSA-N 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- BQKCOFRVVANBNO-UHFFFAOYSA-N chromium manganese Chemical compound [Cr][Mn][Cr] BQKCOFRVVANBNO-UHFFFAOYSA-N 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- HBXWYZMULLEJSG-UHFFFAOYSA-N chromium vanadium Chemical compound [V][Cr][V][Cr] HBXWYZMULLEJSG-UHFFFAOYSA-N 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- AVMBSRQXOWNFTR-UHFFFAOYSA-N cobalt platinum Chemical compound [Pt][Co][Pt] AVMBSRQXOWNFTR-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910001610 cryolite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- RZDQHXVLPYMFLM-UHFFFAOYSA-N gold tantalum Chemical compound [Ta].[Ta].[Ta].[Au] RZDQHXVLPYMFLM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229920000140 heteropolymer Polymers 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- OMEXLMPRODBZCG-UHFFFAOYSA-N iron rhodium Chemical compound [Fe].[Rh] OMEXLMPRODBZCG-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- NFYRMCRBECEAML-UHFFFAOYSA-N manganese palladium Chemical compound [Mn].[Pd] NFYRMCRBECEAML-UHFFFAOYSA-N 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- GBZQODYDRJQFHG-UHFFFAOYSA-N manganese rhodium Chemical compound [Mn].[Rh] GBZQODYDRJQFHG-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004001 molecular interaction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910021324 titanium aluminide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Definitions
- the field of the invention is thin layer or film production by using ionized deposition.
- Electronic and semiconductor components are used in ever-increasing numbers of consumer and commercial electronic products, communications products and data-exchange products. Examples of some of these consumer and commercial products are televisions, computers, cell phones, pagers, palm-type or handheld organizers, portable radios, car stereos, or remote controls. As the demand for these consumer and commercial electronics increases, there is also a demand for those same products to become smaller and more portable for the consumers and businesses.
- the components that comprise the products must also become smaller and/or thinner.
- Examples of some of those components that need to be reduced in size or scaled down are microelectronic chip interconnections, semiconductor chip components, resistors, capacitors, printed circuit or wiring boards, wiring, keyboards, touch pads, and chip packaging.
- any defects that are present in the larger components are going to be exaggerated in the scaled down components.
- the defects that are p resent or e ould b e p resent i n t he 1 arger component should be identified and corrected, if possible, before the component is scaled down for the smaller electronic products.
- the components, the materials used and the manufacturing processes for making those components should be broken down and analyzed.
- Electronic, semiconductor and communication/data-exchange components are composed, in some cases, of layers of materials, such as metals, metal alloys, ceramics, inorganic materials, polymers, or organometallic materials.
- the layers of materials are often thin (on the order of less than a few tens of angstroms in thickness).
- the process of forming the layer - such as physical vapor deposition of a metal or other compound - should be evaluated and, if possible, modified and improved.
- the surface and/or material composition must be measured, quantified and defects or imperfections detected, h the case of the deposition of a layer or layers of material, its not the actual layer or layers of material that should be monitored but the material and surface of that material that is being used to produce the layer of material on a substrate or other surface and the intervening apparatus, such as a coil or collimator, that are placed between the target material and the substrate or other surface that should be monitored.
- the atoms and molecules being deflected or liberated from the target must travel a path to the substrate or other surface that will allow for an even and uniform deposition.
- Atoms and molecules traveling natural and expected paths after deflection and/or liberation from the target will uneven deposition on the surface or substrate, including trenches and holes in the surface or substrate.
- Coils and coil sets such as those that are being produced by Honeywell E lectronic M aterialsTM, are c onsumable p roducts placed inside the sputtering chamber or ionized plasma apparatus that redirect sputtered atoms and/or molecules to form a more uniform film and/or layer on a substrate and/or suitable surface.
- the coil is present in these systems and/or deposition apparatus as an inductively coupling device to create a secondary plasma of sufficient density to ionize at least some of the metal atoms that are sputtered from the target, hi an ionized metal plasma system, the primary plasma forms and is generally confined near the target by the magnetron, and subsequently gives rise to atoms, such as Ti atoms, being ejected from the target surface.
- the secondary plasma formed by the coil system produces Ti, Cu & Ta ions (depending on material being sputtered). These metal ions are then attracted to the wafer by the field in the sheath that forms at the substrate (wafer) surface.
- the term "sheath" means a boundary layer that forms between a plasma and any solid surface. This field can be controlled by applying a bias voltage to the wafer and/or substrate.
- a coil assembly is described herein that comprises a) at least one coil; and b) at least one boss coupled to the at least one coil, wherein the at least one boss comprises at least two support sections.
- Methods of forming and/or producing coil assemblies are described herein and comprise a) providing a coil; b) providing at least one boss having at least two support sections; and c) coupling the at least one boss to the coil.
- Fig. 1 shows a schematic diagram of a contemplated boss design.
- Fig. 2 shows a schematic diagram of a contemplated coil assembly.
- Fig. 3 shows a schematic diagram of a contemplated coil assembly.
- Fig. 4 shows a schematic diagram of a contemplated coil assembly.
- Fig. 5 shows a schematic diagram of a contemplated sputtering assembly.
- a coil set has been developed that utilizes smaller diameter bosses and in some embodiments utilizes smaller, thinner coils.
- a coil assembly is described herein that comprises a) at least one coil; and b) at least one boss coupled to the at least one coil, wherein the at least one boss comprises at least two support sections.
- Methods of forming and/or producing coil assemblies are described herein and comprise a) providing a coil; b) providing at least one boss having at least two support sections; and c) coupling the at least one boss to the coil.
- a contemplated coil assembly comprises at least one coil and in some contemplated embodiments, a coil assembly comprises at least two coils.
- contemplated coils may comprise any suitable material including metals or metal alloys.
- Contemplated coils may have any suitable thickness, depending on the needs of the application. It should be understood; however, that the bosses described herein allow for coil thicknesses that are significantly less than conventional coil thicknesses, some embodiments, contemplated coils are those coils that are considered "thin”.
- the phrase "thin coils” means coils that comprise a thickness of less than about 0.2 inches. In other contemplated embodiments, coils comprise a thickness of less than about 0.13 inches. In yet other embodiments, coils comprise a thickness of less than about 0.1 inches to about 0.010 inches.
- the coil may also have a height and/or a diameter. In some embodiments, the height of the coil is less than about 3 inches. In other embodiments, the height of the coil is less than about 2.5 inches. In yet other embodiments, the height of the coil is less than about 2 inches. And in other embodiments, the height of the coil is less than about 1.5 inches.
- a contemplated coil assembly comprises at least one boss coupled to the at least one coil, wherein the at least one boss comprises at least two support sections.
- Contemplated boss(es) are coupled to the coil through a screw, a bolt or bolt assembly, a welded joint, wherein the welded joint is formed utilizing conventional welding techniques or other more non-conventional techniques, such as laser welding or e-beam welding.
- the boss(es) may also be formed in a mold when the coil is formed by using conventional molding techniques such as injection molding.
- Figures 1-4 show schematic diagrams of one boss design contemplated herein and how at least one boss might be coupled to the coil material. It should be understood, however, that the at least one boss may comprise any suitable shape as long as the goals previously mentioned are substantially met.
- the term “boss” means a support device that couples to at least one of the coil material, the sputtering chamber material and/or the electrical connection material.
- the term “coupled” means a physical attachment of two parts of matter or components (adhesive, attachment interfacing material) or a physical and/or chemical attraction between two parts of matter or components, including bond forces such as covalent and ionic bonding, and non-bond forces such as Van der Waals, electrostatic, coulombic, hydrogen bonding and/or magnetic attraction, i contemplated embodiments, the boss material comprises the same material as the coil and/or the target material; however, it is not always necessary that the boss material, the coil material and the target material be the same.
- the coil may comprise tantalum and the at least one boss may comprise a tantalum alloy, such as TaN.
- the material used to produce the boss may comprise any suitable material, such as those listed below as suitable for the target material, however, it is contemplated that the material will comprise a material that is at least similar and/or compatible to the coil material and/or the target material.
- the at least one boss may comprise a diameter that is significantly smaller than conventional boss diameters, including those diameters less than or equal to about 0.7". hi preferred embodiments, the diameter of the at least one boss is less than or equal to about 0.5", and in additional preferred embodiments, the diameter of the at least one boss is less than or equal to about 0.4". hi some embodiments, the at least one boss comprises a size, shape and at least two distinct diameters.
- the at least one boss may comprise two or more different shapes, sizes and/or diameters, depending on the needs of the customer and/or vendor, the requirements of the deposition apparatus and/or the materials available during construction of the coil and/or coil set.
- the at least two distinct diameters of the at least one boss are formed by coupling together support sections, wherein each support section has a diameter.
- one contemplated boss 100 shown in Figure 1 comprises a first section 110 that has a diameter 115, wherein this section is not coupled directly to the coil (not shown) and a second section 120 that is coupled to the first section 110, that is coupled to the coil and that has a diameter 125 that is larger than the diameter 115 of the first section 110.
- Boss 100 also comprises openings 130 that are also characterized as "vent holes” that aid in ventilation of the screw holes after a support screw (not shown) is applied.
- the first section is coupled to the coil through the second section. It is contemplated that if there are more than one boss coupled to the core that each boss may have a different size, shape and/or diameter than the other boss or bosses coupled to the coil.
- the at least one boss may comprise as few as one boss coupled to the coil material and as many as ten boss coupled to the coil material. In yet other embodiments, some and/or all of the boss may be also coupled to the walls of the deposition apparatus and/or coupled to the electrical connections.
- Figures 2-4 show contemplated coil assemblies 200-400 wherein a plurality of bosses 210, 310 and 410 are coupled to a coil 220, 320 and 420.
- Figure 4 also shows that coils such as coil 420 have a height 430.
- Figures 2 and 3 are overhead views of the coil assemblies showing only the width 240 and 340 of the coil 220 and 320.
- the boss is designed in part to provide support for the coil material, s o i t i s n ot n ecessary that each and every boss be coupled to the walls of the deposition apparatus.
- the boss and/or bosses not only provide support for the coil, but also act as heat transfer devices to transfer heat from the coil and/or the deposition chamber/apparatus to the outer part of the apparatus, hi some embodiments, the heat transfer device is and/or acts like a heat pipe to channel heat out of the chamber or sputtering area. The transfer of heat from the coil and/or the chamber leads to a more stable secondary plasma without significant convection.
- the coil may comprise any suitable material that is at least similar to and/or compatible to the boss material and/or the target material. In additional embodiments, the coil may be produced such that it is thinner or smaller than conventional coils and/or coil sets.
- the current applied to the coil or coil set in the deposition apparatus can be tailored and/or designed to be suitable to the smaller diameter boss design and, in some embodiments, the smaller diameter material used to produce the coil in order to produce a similar atom and/or molecular path achieved in the conventional coil and/or coil set. It should be understood that the current and the size of the bosses and/or coil should work together to be suitable to direct the atoms and/or molecules being sputtered from the target to the surface and/or substrate in a manner such that the deposition of the atoms and/or molecules are more uniform than conventional apparatus and methods currently produce.
- sensing system would a) comprise a simple device/apparatus and/or mechanical setup and a simple method for determining wear, wear-out and/or deterioration of a surface or material; b) would notify the operator when maintenance is necessary, as opposed to investigating the quality of the material on a specific maintenance schedule; and c) would reduce and/or eliminate material waste by reducing and/or eliminating premature replacement or repair of the material.
- Sensing devices and s ensor s ystems contemplated herein can be found in United States Provisional Application Serial No.: 60/410540, which is incorporated herein in its entirety.
- Methods of forming and/or producing coil assemblies comprise a) providing a coil; b) providing at least one boss having at least two support members; and c) coupling the at least one boss to the coil.
- the coil and/or the at least one boss may be provided by any suitable method, including a) buying at least some of the coil and/or the at least one boss from a supplier; b) preparing or producing at least some of the coil and/or the at least one boss in house using materials provided by another source and/or c) preparing or producing the coil and/or the at least one boss in house using materials also produced or provided in house or at the location.
- the coupling of the at least one boss and the coil may be accomplished by utilizing one or several of the coupling methods and apparatus previously discussed herein.
- Figure 5 shows a contemplated sputtering target assembly 500 comprising a sputtering target 510 and a coil 520 with a plurality of bosses 525, wherein the sputtering target 510 is coupled to a back plate 505 and wherein the coil 520 is coupled to at least one sidewall 530 through at least one boss 525.
- a layer 540 is formed on substrate 550 by atoms sputtering from the target 510.
- Sputtering targets and sputtering target assemblies such as that shown in Figure 5, contemplated herein comprise any suitable shape and size depending on the application and instrumentation used in the PVD process.
- Sputtering targets contemplated herein also comprise a surface material and a core material (which includes the backing plate), wherein the surface material is coupled to the core material through and/or around a gas chamber or gas stream.
- the surface material and core material may generally comprise the same elemental malceup or chemical composition/component, or the elemental makeup and chemical composition of the surface material may be altered or modified to be different than that of the core material.
- the surface material and the core material comprise the same elemental makeup and chemical composition.
- the surface material and the core material may be tailored to comprise a different elemental makeup or chemical composition.
- the surface material is that portion of the target that is exposed to the energy source at any measurable point in time and is also that part of the overall target material that is intended to produce atoms and/or molecules that are desirable as a surface coating.
- Sputtering targets, coils and/or bosses may generally comprise any material that can be a) reliably formed into a sputtering target, coils and/or bosses; b) sputtered from the target (and sometimes the coil) when bombarded by an energy source; and c) suitable for forming a final or precursor layer on a wafer or surface. It should be understood that although the coil comprises materials that are considered the same or similar to those materials being sputtered, the coil may or may not sputter atoms.
- Coil sputtering depends primarily on the coil bias with respect to the plasma and the wafer.
- Materials that are c ontemplated to make suitable sputtering targets, coils and/or bosses are metals, metal alloys, conductive polymers, conductive composite materials, conductive monomers, dielectric materials, hardmask materials and any other suitable sputtering material.
- metal means those elements that are in the d-block and f-block of the Periodic Chart of the Elements, along with those elements that have metal- like properties, such as silicon and germanium.
- d-block means those elements that have electrons filling the 3d, 4d, 5d, and 6d orbitals surrounding the nucleus of the element.
- f-block means those elements that have electrons filling the 4f and 5f orbitals surrounding the nucleus of the element, including the lanthanides and the actinides.
- Preferred metals include titanium, silicon, cobalt, copper, nickel, iron, zinc, vanadium, zirconium, aluminum and aluminum- based materials, tantalum, niobium, tin, clrromium, platinum, palladium, gold, silver, tungsten, molybdenum, cerium, promethium, thorium or a combination thereof. More preferred metals include copper, aluminum, tungsten, titanium, cobalt, tantalum, magnesium, lithium, silicon, manganese, iron or a combination thereof.
- Most preferred metals include copper, aluminum and aluminum-based materials, tungsten, titanium, zirconium, cobalt, tantalum, niobium or a combination thereof.
- contemplated and preferred materials include aluminum and copper for superfine grained aluminum and copper sputtering targets; aluminum, copper, cobalt, tantalum, zirconium, and titanium for use in 200 mm and 300 mm sputtering targets, along with other mm-sized targets; and aluminum for use in aluminum sputtering targets that deposit a thin, high conformal "seed" layer of aluminum onto surface layers.
- the phrase "and combinations thereof is herein used to mean that there maybe metal impurities in some of the sputtering targets, such as a copper sputtering target with chromium and aluminum impurities, or there may be an intentional combination of metals and other materials that make up the sputtering target, such as those targets comprising alloys, borides, carbides, fluorides, nitrides, suicides, oxides and others.
- metal also includes alloys, metal/metal composites, metal ceramic composites, metal polymer composites, as well as other metal composites. Alloys contemplated herein comprise gold, antimony, arsenic, boron, copper, germanium, nickel, indium, palladium, phosphorus, silicon, cobalt, vanadium, iron, hafnium, titanium, iridium, zirconium, tungsten, silver, platinum, tantalum, tin, zinc, lithium, manganese, rhenium, and/or rhodium.
- Specific alloys include gold antimony, gold arsenic, gold boron, gold copper, gold germanium, gold nickel, gold nickel indium, gold palladium, gold phosphorus, gold silicon, gold silver platinum, gold tantalum, gold tin, gold zinc, palladium lithium, palladium manganese, palladium nickel, platinum palladium, palladium rhenium, platinum rhodium, silver arsenic, silver copper, silver gallium, silver gold, silver palladium, silver titanium, titani m zirconium, aluminum copper, aluminum silicon, aluminum silicon copper, aluminum titanium, clrromium copper, chromium manganese palladium, chromium manganese platinum, chromium molybdenum, clrromium ruthenium, cobalt platinum, cobalt zirconium niobium, cobalt zirconium rhodium, cobalt zirconium tantalum, copper nickel, iron aluminum, iron rhodium, iron tanta
- chromium boride lanthanum boride, molybdenum boride, niobium boride, tantalum boride, titanium boride, tungsten boride, vanadium boride, zirconium boride, boron carbide, chromium carbide, molybdenum carbide, niobium carbide, silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, vanadium carbide, zirconium carbide, aluminum fluoride, barium fluoride, calcium fluoride, cerium fluoride, cryolite, lithium fluoride, magnesium fluoride, potassium fluoride, rare earth fluorides, sodium fluoride, aluminum nitride, boron
- Thin layers or films produced by the sputtering of atoms or molecules from targets discussed herein can be formed on any number or consistency of layers, including other metal layers, substrate layers, d ielectric 1 ayers, hardmask or etchstop 1 ayers, p hotolithographic layers, anti-reflective layers, etc.
- the dielectric layer may comprise dielectric materials contemplated, produced or disclosed by Honeywell International, Inc.
- FLARE polyarylene ether
- adamantane-based materials such as those shown in pending application 09/545058 ;
- the wafer or substrate may comprise any desirable substantially solid material. Particularly desirable substrates would comprise glass, ceramic, plastic, metal or coated metal, or composite material.
- the substrate comprises a silicon or germanium arsenide die or wafer surface, a packaging surface such as found in a copper, silver, nickel or gold plated leadframe, a copper surface such as found in a circuit board or package interconnect trace, a via-wall or stiffener interface ("copper” includes considerations of bare copper and its oxides), a polymer-based packaging or board interface such as found in a polyimide-based flex package, lead or other metal alloy solder ball surface, glass and polymers such as polyimides.
- the substrate comprises a material common in the packaging and circuit board industries such as silicon, copper, glass, or a polymer.
- Substrate layers contemplated herein may also comprise at least two layers of materials.
- One layer of material comprising the substrate layer may include the substrate materials previously described.
- Other layers of material comprising the substrate layer may include layers of polymers, monomers, organic compounds, inorganic compounds, organ ometallic compounds, continuous layers and nanoporous layers.
- the term "monomer” refers to any chemical compound that is capable of forming a covalent bond with itself or a chemically different compound in a repetitive manner.
- the repetitive bond formation between monomers may lead to a linear, branched, super-branched, or tlrree-dimensional product.
- monomers may themselves comprise repetitive building blocks, and when polymerized the polymers formed from such monomers are then termed "blockpolymers".
- Monomers may belong to various chemical classes of molecules including organic, organometallic or inorganic molecules. The molecular weight of monomers may vary greatly between about 40 Dalton and 20000 Dalton. However, especially when monomers comprise repetitive building blocks, monomers may have even higher molecular weights.
- Monomers may also include additional groups, such as groups used for crosslinking.
- crosslinking refers to a process in which at least two molecules, or two portions of a long molecule, are joined together by a chemical interaction. Such interactions may occur in many different ways including formation of a covalent bond, formation of hydrogen bonds, hydrophobic, hydrophilic, ionic or electrostatic interaction. Furthermore, molecular interaction may also be characterized by an at least temporary physical connection between a molecule and itself or between two or more molecules.
- Contemplated polymers may also comprise a wide range of functional or structural moieties, including aromatic systems, and halogenated groups. Furthermore, appropriate polymers may have many configurations, including a homopolymer, and a heteropolymer. Moreover, alternative polymers may have various forms, such as linear, branched, super- branched, or tlrree-dimensional. The molecular weight of contemplated polymers spans a wide range, typically between 400 Dalton and 400000 Dalton or more. Examples of contemplated inorganic compounds are silicates, aluminates and compounds containing transition metals. Examples of organic compounds include polyarylene ether, polyimides and polyesters.
- contemplated organometallic compounds include poly(dimethylsiloxane), poly(vinylsiloxane) and poly(trifluoropropylsiloxane).
- the substrate layer may also comprise a plurality of voids if it is desirable for the material to be nanoporous instead of continuous.
- Voids are typically spherical, but may alternatively or additionally have any suitable shape, including tubular, lamellar, discoidal, or other shapes. It is also contemplated that voids may have any appropriate diameter. It is further contemplated that at least some of the voids may connect with adjacent voids to create a structure with a significant amount of connected or "open" porosity.
- the voids preferably have a mean diameter of less than 1 micrometer, and more preferably have a mean diameter of less than 100 nanometers, and still more preferably have a mean diameter of less than 10 nanometers. It is further contemplated that the voids maybe uniformly or randomly dispersed within the substrate layer, hi a preferred embodiment, the voids are uniformly dispersed within the substrate layer.
- a contemplated boss may be a two diameter pin comprising two support structures with an unchanged tapped #8 screw hole, wherein the larger diameter support structure is e-beam welded to the outer diameter of the coil and/or coil material. It should be understood that other mounting devices may be used in place of the screws.
- This coil design utilizes the smaller boss, thus reducing the cost of the coil set. Also, because the bosses are thinner and, in some cases longer, the same coil could be made thinner, ultimately decreasing the difference between the target and the coil life.
- the boss and/or coil, in this Example could be made of a lesser grade of tantalum or other material.
- the at least one boss is made with a CNC-lathe that does turning, boring and 4 th axis milling.
- the CNC-lathe has live tooling and a single bar feeder.
- the at least one boss is made of 395 or 495 tantalum and e-beam welded to a 0.125" x 2" round coil.
- the coil is then used in a sputtering chamber for the ENCORE® system.
- the coil has 200 mm and 300 mm designs where the 200 mm designs where the 200 mm design comprises at least 5 bosses and the 300 mm comprises at least 7 bosses.
- the specific dimensions of the contemplated boss arrangement and size for this Example are, again, shown in Figures 1-4. It should be understood; however, that this example is not meant to limit the scope of the subject matter presented herein.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2006501110A JP2007524754A (en) | 2003-01-22 | 2004-01-21 | Apparatus and method for ionizing vapor deposition of thin film or thin layer |
US10/542,040 US20060226003A1 (en) | 2003-01-22 | 2004-01-21 | Apparatus and methods for ionized deposition of a film or thin layer |
EP04704131A EP1595003A4 (en) | 2003-01-22 | 2004-01-21 | Apparatus and methods for ionized deposition of a film or thin layer |
Applications Claiming Priority (2)
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US44199903P | 2003-01-22 | 2003-01-22 | |
US60/441,999 | 2003-01-22 |
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JP (1) | JP2007524754A (en) |
KR (1) | KR20050092431A (en) |
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WO (1) | WO2004066360A2 (en) |
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US9204535B2 (en) * | 2012-04-18 | 2015-12-01 | Lg Chem, Ltd. | Conductive structure and method for manufacturing same |
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- 2004-01-21 EP EP04704131A patent/EP1595003A4/en not_active Withdrawn
- 2004-01-21 WO PCT/US2004/001798 patent/WO2004066360A2/en active Application Filing
- 2004-01-21 CN CNB2004800078195A patent/CN100537830C/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN1764736A (en) | 2006-04-26 |
EP1595003A4 (en) | 2008-03-26 |
WO2004066360A3 (en) | 2004-12-29 |
KR20050092431A (en) | 2005-09-21 |
CN100537830C (en) | 2009-09-09 |
JP2007524754A (en) | 2007-08-30 |
EP1595003A2 (en) | 2005-11-16 |
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