US5982986A - Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber - Google Patents

Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber Download PDF

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Publication number
US5982986A
US5982986A US08/383,112 US38311295A US5982986A US 5982986 A US5982986 A US 5982986A US 38311295 A US38311295 A US 38311295A US 5982986 A US5982986 A US 5982986A
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Prior art keywords
substrate
vacuum chamber
wafer
rotation
semiconductor
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Expired - Fee Related
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US08/383,112
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English (en)
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Robert E. Davenport
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Applied Materials Inc
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Applied Materials Inc
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Priority to US08/383,112 priority Critical patent/US5982986A/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DAVENPORT, ROBERT E.
Priority to KR1019960002804A priority patent/KR100371991B1/ko
Priority to EP96101602A priority patent/EP0725427A2/en
Priority to JP8018945A priority patent/JPH08264452A/ja
Priority to US09/360,188 priority patent/US6222991B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Definitions

  • This invention relates to semiconductor substrate processing. More particularly, this invention relates to apparatus and method for rotationally aligning and degassing a semiconductor substrate in the same vacuum chamber.
  • PVD physical vapor deposition
  • CVD advanced chemical vapor deposition
  • Degassing prior to PVD processing conventionally is carried out at temperatures exceeding 350° C. for time periods of from about 40 seconds to about 2 minutes to remove sufficient gases from the wafer to assure a satisfactory deposition by sputtering.
  • Degassing of a wafer is conventionally carried out in one of two ways.
  • One method used to degas a wafer comprises a radiant heating of the wafer, using heat lamps located external to the vacuum chamber containing the wafer, and positioned adjacent transparent windows through which the heat is radiated from the lamps to the wafer.
  • This method is relatively low in cost, is fairly rapid, and does not require clamping of the wafer to the wafer support within the vacuum chamber.
  • the radiant heating method is unsatisfactory for temperatures in excess of 350° C., because the temperature of the wafer is not easily controlled, and the heating is usually not uniform across the entire wafer. Typical temperature nonuniformity across the wafer at 350° C. is greater than ⁇ 30° C.
  • alignment of the rotational orientation of the wafer, during the degassing step is usually not possible because the radiation from the heat lamps interferes with operation of the optical means conventionally used for such rotational alignment.
  • the other method conventionally used to degas a wafer comprises physically (mechanically) clamping the wafer to a wafer support in a vacuum chamber and then heating the wafer using a resistive heater located in the wafer support adjacent the undersurface of the wafer resting on the wafer support.
  • a thermally-conductive gas is normally admitted into the space between the wafer support and the underside of the wafer, with the clamped edge of the wafer serving to at least partially retain the gas in this space.
  • This heating method permits degassification temperatures of as high as about 500-600° C. to be achieved.
  • This method thus permits the use of degassing temperatures in excess of 350° C., and permits measurement and reasonable control of the temperature of the wafer.
  • alignment of the rotational orientation usually cannot be carried out during the degassing step because the conduit for the thermally conductive gas inhibits rotation of the chuck.
  • the clamping ring also inhibits rotation due to its weight. Rotation of a clamped wafer could also cause wafer breakage and particles.
  • the alignment of the rotational orientation of the wafer must, therefore, be carried out in a separate chamber prior to the degassing step.
  • the degassing step can reduce process throughput.
  • One prior art approach which has been considered for solving this particular problem is to provide parallel degassing chambers, i.e., two degassing chambers are provided in a semiconductor wafer processing apparatus for each PVD processing chamber.
  • this adds considerable extra cost to the apparatus.
  • the rotational orientation of the wafer must also be carried out in a separate chamber, either three or four preprocessing chambers must be utilized (depending whether or not each of the two parallel degassing chamber is coupled to its own separate rotational orientation chamber), which greatly adds to the overall expense of the apparatus.
  • a semiconductor processing system which is capable of degassing a semiconductor substrate at temperatures as high as 500° C. and also rotationally aligning the substrate in the same vacuum chamber, without the use of a mechanical clamping ring and thermally conductive gas.
  • the apparatus of the semiconductor processing system includes a heated electrostatic clamping structure for supporting the semiconductor wafer and retaining the substrate in thermal communication therewith in the vacuum chamber, a heater within the electrostatic clamping structure for heating the electrostatically clamped substrate to degas it, a rotation mechanism for imparting rotation to the substrate in the same vacuum chamber, and a detector for detecting the rotational alignment of the substrate in the vacuum chamber in response to the rotation of the substrate.
  • the substrate is rotated to rotationally align it as it is being heated to degas it without, however, using mechanical clamping apparatus to secure the substrate to a substrate support.
  • the substrate may be rotated for alignment either prior to or after degassification, but in the same chamber.
  • FIG. 1 is a vertical cross-sectional view in schematic form of a degassification and rotational alignment chamber of a semiconductor substrate processing apparatus comprising one embodiment of the invention wherein the substrate is rotationally aligned using a lift ring within the vacuum chamber to rotate the substrate.
  • FIG. 2 is an isometric view illustrating the optical orientation apparatus shown in FIG. 1 for rotationally aligning the substrate.
  • FIG. 3 is a vertical cross-sectional view in schematic form of a degassification and rotational alignment chamber of a semiconductor substrate processing apparatus comprising another embodiment of the invention wherein the substrate is rotationally aligned by rotation of the substrate support and electrostatic chuck therein.
  • the invention comprises a semiconductor processing system capable of degassing a semiconductor substrate or wafer at temperatures as high as 500° C. or higher, depending upon the temperature sensitivity of other materials already on the wafer, and also capable of aligning the rotational orientation of the wafer in the same vacuum chamber, without the use of a mechanical clamping ring and thermally conductive gas.
  • the system utilizes an electrostatic clamping means for retaining the semiconductor wafer in thermal communication with a wafer support in the vacuum chamber while the wafer is heated by a heater within the wafer support to degas it.
  • a rotation mechanism for imparting rotation to the wafer in the vacuum chamber and a detector for detecting the rotational alignment of the wafer in response to the rotation of the wafer are also provided.
  • the wafer is simultaneously rotated to rotationally align it while it is being heated to degas it.
  • a vacuum chamber 2 is provided with a wafer support 10, which may comprise a stainless steel material, mounted on a pedestal 12.
  • a wafer support 10 which may comprise a stainless steel material, mounted on a pedestal 12.
  • an electrostatic clamping means or chuck 20 which, in the illustrated embodiment, comprises an insulative material 24, such as aluminum oxide, aluminum nitride, or other ceramic material, on the top surface of wafer support 10 and having embedded therein metallic electrodes 26 and 27 which are connected through leads 28 and 29 to a high voltage source (not shown) external to vacuum chamber 2.
  • a heater 14 such as a resistance heater, which may be connected through lead(s) 16 to a power source (not shown) external to vacuum chamber 2.
  • wafer support 10 and pedestal 12 are at atmospheric pressure.
  • Wafer support 10 is brazed to ceramic chuck 20 to provide a vacuum seal.
  • a wafer 30, to be degassed and rotationally aligned, may be placed on electrostatic chuck 20 and electrodes 26 and 27 energized with a high voltage, e.g., about 500-5000 volts DC, to thereby electrostatically clamp wafer 30 to the surface of electrostatic chuck 20.
  • Wafer 30 is removed from the system transfer robot (not shown) for placement on electrostatic chuck 20 (and later removal) by lift pins or fingers (not shown) on a ring (also not shown) attached to support plate 51 which, in turn, is connected to a pneumatic or motor-driven lift motor 48 and shaft 50 through a vacuum isolation bellows 54.
  • Heater 14 is energized to thereby heat electrostatic chuck 20 which then heats wafer 30 through direct conduction. It should be noted that unlike prior art securement of the wafer to an upper surface of a wafer support during the heating of the wafer, not only is the periphery of the wafer in thermal contact with electrostatic chuck 20 (to provide thermal coupling therebetween), but all of the undersurface of wafer 30 is also in mechanical contact with electrostatic chuck 20 and therefore thermally coupled to electrostatic chuck 20 due to the uniformity of the electrostatic forces across the surface of electrostatic chuck 20. Heater 14 advantageously is activated prior to the electrostatic clamping of wafer 30 to electrostatic chuck 20 to preheat electrostatic chuck 20 and thereby accelerate the heating process. Because of the intimate contact of the wafer to the heated electrostatic chuck, gas between the wafer and the chuck is not required.
  • Wafer 30 is also rotationally aligned in vacuum chamber 2. Alignment of the rotational or angular orientation of a semiconductor wafer is necessary to provide the correct rotational alignment of a semiconductor wafer in a processing chamber, as is well known to those skilled in the art. Such rotational alignment is facilitated by the provision of some sort of alignment indica on the wafer itself.
  • a common alignment means is the provision of a flat or notch on one portion of the circumference of a normally circular wafer.
  • a beam of light from a light source is then usually directed perpendicular to the plane of the wafer to intercept the wafer adjacent its edge. As the wafer is rotated, the light is reflected back to the source until the flat or notched portion is encountered, as which point the light beam is transmitted to a photo detector positioned on the other side of the wafer.
  • a ring 40 may be provided to rotate wafer 30 to rotationally align wafer 30 in vacuum chamber 2.
  • the wafer is lowered onto rotatable ring 40.
  • Wafer 30 is lowered onto ring 40 by activation of fluid powered motor 90 to which is attached a shaft 92, as shown in FIG. 1, which is centrally mounted within pedestal 12.
  • Shaft 92 is coupled to the upper portion of pedestal 12 by a cross bar 94.
  • Bellows 13 on pedestal 12 permit the upper portion of pedestal 12, with support 10 and electrostatic chuck 20 secured thereto, to move up and down (vertically) while maintaining the vacuum within chamber 2. This, in turn, permits the desired lowering of wafer 30 onto rotatable ring 40, and subsequent raising of wafer 30 off ring 40 when the orientation step is complete.
  • Ring 40 is provided with arms 42 which are, in turn, connected to a central cylinder 44 to which are attached a first set of magnets 46 which form a part of magnetic coupling mechanism 52.
  • a hollow shaft 60 located within pedestal 12 has a second set of magnets 62 mounted thereon forming the other portion of magnetic coupling mechanism 52.
  • a motor 64 rotates shaft 60 via a belt 66 and this rotation is transmitted through magnetic coupling mechanism 52 to cylinder 44 and ring 40 to thereby rotate wafer 30.
  • a light source 70 external to vacuum chamber 2, directs a light beam 72 through a first window 4 in the top wall of vacuum chamber 2 toward the top surface of wafer 30 adjacent the periphery thereof.
  • a light beam 72 passes through to a second window 6 located in the bottom wall of vacuum chamber 2 and is detected by photodetector 80, signifying the rotational position of the flat or notched portion 32 of wafer 30.
  • the rotational alignment of wafer 30 is carried out in the same vacuum chamber as the degassification of wafer 30.
  • the rotational alignment and degassification are carried out sequentially, rather than simultaneously.
  • the rotational alignment may be carried out either before or after the degassifying of wafer 30.
  • FIG. 3 illustrates another embodiment of the invention which permits such simultaneous rotational orientation and degassifying of a semiconductor wafer by rotating the wafer support and electrostatic chuck with the wafer clamped thereto so that the wafer continues to be heated and therefore degassified while the rotational orientation of the wafer is carried out by the light source and photodetector.
  • the pedestal beneath wafer support 10 comprises a hollow cylinder 112 with its cylindrical wall magnetically coupled through magnetic coupling mechanism or clutch 152 to a hollow cylindrical shaft 160 external to vacuum chamber 2.
  • Cylindrical shaft 160 is, in turn, connected to a motor 164 which rotates cylindrical shaft 160 and this rotation is transmitted through magnetic coupling 152 to cylindrical pedestal 112 to thereby rotate wafer support 10, electrostatic chuck 20, and wafer 30 clamped thereto.
  • a flexible heater lead 116 connects heater lead 16 within vacuum chamber 2 to an external heater lead 118; while flexible high voltage leads 128 and 129 connect high voltage leads 28 and 29 with external high voltage lead 138 and 139. This provision of such flexible leads permits rotation of wafer support 10, for example, 180° in each direction while still maintaining electrical contact respectively to heater 14 and electrostatic chuck electrodes 26 and 27.
  • light source 70 external to vacuum chamber 2 directs light beam 72 through first window 4 in the top wall of vacuum chamber 2 toward the top surface of wafer 30 adjacent the periphery thereof.
  • first window 4 in the top wall of vacuum chamber 2 toward the top surface of wafer 30 adjacent the periphery thereof.
  • light beam 72 passes to and through second window 6 located in the bottom wall of vacuum chamber 2 and is detected by photodetector 80, signifying the rotational position of flat or notched portion 32 of wafer 30.
  • the semiconductor wafer processing system of the invention permits degassifying and rotational alignment of a semiconductor wafer to be carried out in the same vacuum chamber with temperatures above 350° C. being utilizable without, however, mechanical clamping the wafer to the wafer support.
  • rotational alignment and degassification of the semiconductor wafer may be carried out simultaneously in the same chamber.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
US08/383,112 1995-02-03 1995-02-03 Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber Expired - Fee Related US5982986A (en)

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Application Number Priority Date Filing Date Title
US08/383,112 US5982986A (en) 1995-02-03 1995-02-03 Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
KR1019960002804A KR100371991B1 (ko) 1995-02-03 1996-02-03 단일진공챔버내에서반도체기판을회전정렬시키고탈가스화하기위한장치및방법
EP96101602A EP0725427A2 (en) 1995-02-03 1996-02-05 Apparatus and method for semiconductor substrate processing
JP8018945A JPH08264452A (ja) 1995-02-03 1996-02-05 単一チャンバ内での半導体基板の回転調心且つデガス装置及び方法
US09/360,188 US6222991B1 (en) 1995-02-03 1999-07-23 Method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber

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US09/360,188 Expired - Fee Related US6222991B1 (en) 1995-02-03 1999-07-23 Method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber

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US6465369B1 (en) * 1999-10-06 2002-10-15 Mosel Vitelic Inc. Method for stabilizing semiconductor degas temperature
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6592673B2 (en) * 1999-05-27 2003-07-15 Applied Materials, Inc. Apparatus and method for detecting a presence or position of a substrate
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US6889004B2 (en) * 2000-04-20 2005-05-03 Tokyo Electron Limited Thermal processing system and thermal processing method
WO2006011169A1 (en) * 2004-07-30 2006-02-02 Lpe Spa Epitaxial reactor with susceptor controlled positioning
US20090139448A1 (en) * 2007-11-29 2009-06-04 Hironobu Hirata Vapor phase growth apparatus ans vapor phase growth method
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US20150036260A1 (en) * 2013-08-05 2015-02-05 Applied Materials, Inc. Electrostatic carrier for thin substrate handling
US20150064809A1 (en) * 2013-08-30 2015-03-05 Applied Materials, Inc. Substrate support system
US20180033673A1 (en) * 2016-07-26 2018-02-01 Applied Materials, Inc. Substrate support with in situ wafer rotation
US9892956B1 (en) 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
WO2019245792A1 (en) * 2018-06-22 2019-12-26 The Curators Of The University Of Missouri Novel method of manufacture of metal nanoparticles and metal single-atom materials on various substrates and novel compositions
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10601346B2 (en) * 2016-11-03 2020-03-24 Samsung Display Co., Ltd. Electrostatic chuck and electrostatic adsorption apparatus
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US5842825A (en) * 1997-10-07 1998-12-01 International Business Machines Corporation Incremented rotated wafer placement on electro-static chucks for metal etch
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JP5504980B2 (ja) * 2010-03-04 2014-05-28 日新イオン機器株式会社 ウエハリフト回転機構、ステージ装置及びイオン注入装置
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KR960032593A (ko) 1996-09-17
US6222991B1 (en) 2001-04-24
EP0725427A2 (en) 1996-08-07
EP0725427A3 (ko) 1996-09-04
KR100371991B1 (ko) 2003-03-28

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