US5704992A - Solar cell and method for manufacturing a solar cell - Google Patents

Solar cell and method for manufacturing a solar cell Download PDF

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US5704992A
US5704992A US08/592,327 US59232796A US5704992A US 5704992 A US5704992 A US 5704992A US 59232796 A US59232796 A US 59232796A US 5704992 A US5704992 A US 5704992A
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grooves
solar cell
back side
holes
substrate
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Gerhard Willeke
Peter Fath
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
    • F28F3/04—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being integral with the element
    • F28F3/048—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being integral with the element in the form of ribs integral with the element or local variations in thickness of the element, e.g. grooves, microchannels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
    • B01D29/01—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements
    • B01D29/012—Making filtering elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
    • B01D29/01—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements
    • B01D29/03—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements self-supporting
    • B01D29/031—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements self-supporting with corrugated, folded filtering elements
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
    • B01D29/01—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements
    • B01D29/05—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements supported
    • B01D29/07—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements supported with corrugated, folded or wound filtering sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D39/00—Filtering material for liquid or gaseous fluids
    • B01D39/10—Filter screens essentially made of metal
    • B01D39/12—Filter screens essentially made of metal of wire gauze; of knitted wire; of expanded metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
    • B01D46/12—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0093—Microreactors, e.g. miniaturised or microfabricated reactors
    • B01J35/56—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/02—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by influencing fluid boundary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00781—Aspects relating to microreactors
    • B01J2219/00783—Laminate assemblies, i.e. the reactor comprising a stack of plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00781—Aspects relating to microreactors
    • B01J2219/00819—Materials of construction
    • B01J2219/00824—Ceramic
    • B01J2219/00828—Silicon wafers or plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00781—Aspects relating to microreactors
    • B01J2219/00819—Materials of construction
    • B01J2219/00835—Comprising catalytically active material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00781—Aspects relating to microreactors
    • B01J2219/00873—Heat exchange
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2260/00—Heat exchangers or heat exchange elements having special size, e.g. microstructures
    • F28F2260/02—Heat exchangers or heat exchange elements having special size, e.g. microstructures having microchannels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

Definitions

  • the invention relates to solar cells and a method for producing solar cells.
  • Document D1 discloses a substrate having a grid formed by V-shaped grooves which are created by means of an anisotropic etching process using photolithographic steps.
  • D1 discloses differential etching to produce an array of ink jet nozzles. Lithography is used to define the position of the nozzles on the silicon wafer. As shown in FIG. 2, a differential etch may be applied to one side of the wafer and the same etching applied to the other side of the wafer. The etching produces grooves in the shape of a truncated pyramid.
  • Document D2 discloses mechanical surface structuring which provides V-shaped grooves on a substrate surface wherein the working solar cell is prepared by mechanically texturing the surface.
  • the grooves on the surface are formed using a conventional silicon dicing saw and beveled blades may be used.
  • Document D2 discloses that the mechanical structuring used therein is similar to a previous technique, but that beveled blades rather than rectangular blades are used. Following the mechanical structuring, the sawing damage is removed using various etchants. However, document D2 discloses surface structuring limited to only one side of a silicon wafer.
  • document D1 One aspect of the manufacturing technology disclosed by document D1 is that creating grooves on a substrate by means of an anisotropic etching process is very time-consuming and subject to geometric limitations. As noted in document D1, the etching process may also result in cracks and defects, depending on the geometry of the nozzles. As to documents D2 and D3, the solar cells disclosed therein are structured on only one side of the wafer and as such are one-sidedly effective. Transferring the principle known from document D1 for creating a grid to solar cells according to documents D2 and D3 encountered considerable technical reservations, particularly due to the thin components to be processed.
  • the present invention provides solar cells which are structured to allow double-sided utilization of the solar cells to thereby increase the efficiency of the solar cells.
  • the present invention also provides a method for quickly and easily producing such high efficiency solar cells.
  • an object of the present invention is to provide a high efficiency solar cell which is easily manufactured using various processing methods.
  • the present solar cell is formed on a substrate, for example on a semiconductor wafer, in which charge carriers can be generated by the energy of incident rays, which charge carriers can be separated by an electrical field and thereafter dissipated via electrically conducting contacts.
  • the high efficiency solar cell of the present invention incorporates a double sided structure having a plurality of grooves formed on the two sides of the solar cell. The plurality of grooves on the two sides of the solar cell form a grid pattern of regularly arranged through holes.
  • the plurality of grooves are generally equidistant, parallel and V-shaped, although other groove profiles and arrangements are possible as described further below, with the grooves on the two sides of the solar cell inscribing an angle relative to each other.
  • the grooves are sufficiently deep for creating a plurality of through holes at the intersections of the grooves.
  • Another object underlying the present invention is to propose a method for easy, low-cost manufacture of the solar cells of the present invention at high production rates, the efficiency of which cells is increased considerably due to the double-sided structuring.
  • This objective is accomplished in a method wherein a plurality of grooves are formed on the front and back of a semiconductor substrate in preferably equidistant and parallel manner, such that the grooves are aligned and dimensioned so as to inscribe on both sides of the semiconductor substrate an angle relative to one another and have a depth such that through holes are automatically created at the intersections of the grooves on the front and back side to form a grid pattern.
  • the present method of the invention allows the manufacture of solar cells which are considerably more efficient than prior solar cells.
  • the present method offers a superior design variety in the manufacture of the basic grid patterns of the present solar cell.
  • the generally V-shaped grooves are created in the base element by means of a saw blade having a pointed profile and rotating at high speed.
  • This method is especially favorable in view of the universality of the materials suited for processing and the possible variety in the make-up of grooves and through holes and, thus, of the grid patterns.
  • the applicational accuracy of modem sawing machines assures the creation of grids with a correspondingly high precision.
  • Through hole diameters up to 5 ⁇ m are possible especially with the use of pointed saw blades, the minimum hole diameter being limited merely by the grain size of the abrasive of the saw blades.
  • the rate of production can be boosted by mounting several saw blades on one spindle.
  • the grooves may also be produced by another mechanical method, notably by means of a saw type forming element rotating at high speed.
  • a saw type forming element consists of a roll-shaped element which features the negative profile of the grooves and is coated with an abrasive.
  • the roll-shaped element may consist of metal (e.g., soft steels, aluminum, bronze, etc.), but other materials, notably ceramics and special plastics, may be used as well.
  • direct fabrication of a structuring roll of the respective abrasive is also conceivable, e.g., diamond, boron nitride, silicon carbide etc.
  • the present invention also relates to a high-efficiency solar cell, with a grid pattern of through holes which are created by producing on the front and back side of a substrate wafer a plurality of preferably equidistant, parallel and generally V-shaped grooves, with the grooves of the two sides inscribing an angle relative to one another and being sufficiently deep for the through holes to be created automatically at the intersections of the grooves.
  • the solar cell of the present invention may be made from a base of a crystalline silicon wafer and features on the front and back side, except on the contact zones, a whole-area emitter coating, the emitter coatings of the front and back side being electrically connected by way of the through holes.
  • the polycrystalline silicon substrates are in the course of the solar cell production process subjected to hydrogen treatment and/or to a phosphorus getter step (1), (2). But the results are usually limited. Therefore, obtaining a maximally coarse crystalline, pure material is primarily attempted by improving the customary block casting method.
  • the resulting solar cell being controllable in its transparency.
  • the present high efficiency solar cell of crystalline silicon wafers is uniquely suited for large-area terrestrial use. Additionally an interesting possible application of this technology to monocrystalline silicon is extraterrestrial use, with particular allowance for the weight advantage and good radiation tolerance to be expected.
  • the present solar cell can be employed both in commercial window coverings and in the consumer sector in automotive sun roofs or as integral component of facade liners.
  • the solar cell surface is passivated throughout, except for the contact zones.
  • the ridges between the grooves may be n ++ -doped or p ++ -doped in alternating succession.
  • the grooves on the back side are arranged so that they inscribe in alternating fashion, on their one or other end, an acute angle with the adjacent groove, thus creating a continuous, zig-zag groove, with the ridges between adjacent grooves extending to a point at their end facing the groove angle.
  • a meshing contact finger arrangement of alternating charge carrier type (n ++ -p ++ -n ++ ), favorable for back-bonded solar cells, is achieved.
  • a bus bar may be provided on the (respective) outer edge of the back side of the solar cell having the contact finger arrangement described above to greatly simplify the electrical connection of individual contact fingers of same charge carrier type.
  • the present invention also provides a method for bonding the present high efficiency solar cell characterized in that the protruding ridges that extend between the grooves are metallized.
  • This method preferably encompasses a procedure in which a roll type element coated with a metallic paste is rolled across the protruding ridges.
  • This roll printing method is additionally suited for application of dopant-containing paste for selective contact diffusion (n ++ and p ++ ) as well as etching agents for selective opening of a passivation oxide or nitride layer.
  • a photoresist is applied, exposed obliquely at a preferably small angle, whereafter the exposed photoresist is removed and metallization is then carried out within the openings thus produced on top of the grooves.
  • n-diffusion Prior to metallization of the contact strips, a heavy n-diffusion, or p-diffusion, should be carried out in the opened areas.
  • the metallized contact strips can also be fashioned exclusively on the back side of the solar cells.
  • FIG. 1 shows a saw blade with a flat-face profile and an acute angle
  • FIGS. 2a-b show sectional views of two structuring rolls
  • FIG. 3 shows an illustration of the roll printing method
  • FIG. 4 shows a structuring roll with a smooth, no-profile base element
  • FIG. 5 shows a perspective sectional view of a finished solar cell according to embodiment I
  • FIG. 6 shows a plan view of a section of a solar cell according to embodiment I
  • FIG. 7 shows a cross-sectional view of a solar cell according to embodiment I along line 7--7 in FIG. 6;
  • FIG. 8 shows a perspective sectional view of a finished solar cell according to embodiment II
  • FIG. 9 shows a plan view of a section of a solar cell according to embodiment II.
  • FIG. 10 shows a cross-sectional view of a solar cell according to embodiment II along line 10--10 in FIG. 9;
  • FIG. 11 shows a perspective sectional view of a finished solar cell according to embodiment III
  • FIG. 12 shows a plan view of the back side of a solar cell according to embodiment III
  • FIG. 13 shows an illustration of the roll printing method for contact finger metallization
  • FIG. 14 shows a perspective view of the described exposure
  • FIG. 15 shows a perspective view of the illustrated metal vaporization
  • FIG. 16 illustrates the capturing of photons in solar cells according to FIGS. 5-15.
  • each solar cell comprises substrate wafer 1 on which a plurality of grooves 12 are formed on one side and a plurality of grooves 13 are formed on the other side.
  • grooves 12, 13 are shown as having a V-shaped profile, it is to be understood as described below, that a variety of profile shapes may be used.
  • Grooves 12, 13 are formed to inscribe an angle with respect to each other such that holes 7 are formed by the intersection of grooves 12, 13.
  • grooves 12, 13 may be produced with various profiles to produce differing sizes, shapes and arrangements of holes 7.
  • holes 7 form a grid pattern on substrate wafer 1 wherein holes 7 in a particular groove are separated by a distance W R , and holes 7 in one groove are separated from holes 7 in an adjacent groove by a distance W V .
  • the zig-zag pattern of grooves 13 in embodiment III produces a zig-zag pattern of holes 7.
  • Emitter coating 2 is formed on the surface of substrate wafer 1 except on the contact areas formed on substrate wafer 1 as described further below.
  • Oxide layer 3 is further formed on emitter coating 2. As described further below, the formation of grooves 12, 13 on both sides of substrate wafer 1 increases the efficiency of the present solar cells.
  • Front contact ridges 6 are formed on selected ridges between grooves 12 one side of substrate wafer 1 and back contact ridges 9 are formed on selected ridges between grooves 13 on the other side of substrate wafer 1.
  • Front contact ridges 6 include doped zone 4 in contact with contact finger 5, and back contact ridges 9 include doped zone 11 in contact with contact finger 10.
  • the contact includes n++ coating 4A formed on the solar cell after a portion of emitter coating 2 has been removed and contact finger 5A is further formed thereon on the front side.
  • the back side includes p++ coating 11A and contact finger 10A.
  • the contact includes n++ doped contact ridges 14 and p++ doped contact ridges 15 formed on one side of substrate wafer 1.
  • grooves 13 are formed in a zig zag fashion to produce contact ridges 14, 15 of alternating charge carrier type. This contact ridge arrangement is obtained by first fashioning V-shaped grooves 13 that extend parallel to one another. Next, a second set of parallel grooves 13 is created, with the direction of the grooves 13 created in the first structuring step inscribing an angle with the grooves 13 of the second structuring step.
  • contact ridges 14 are n ++ -doped while the opposite set of ridges 15 are p ++ -doped to form a contact ridge arrangement suitable for back contact solar cells having meshing contacts of alternating charge carrier type (n ++ -p ++ -n ++ ).
  • the electrical connection of the individual contact ridges 14, 15 of same charge carrier type is greatly simplified by application of bus bars 16, 17 disposed on the edges of substrate wafer 1.
  • the size and shape of holes 7 depend on the cross-sectional shape and dimensions of grooves 12, 13.
  • the size and shape of holes 7 are directly governed by the width of grooves 12, 13 on the front and back side.
  • Grooves 12, 13 of equal width on both sides of substrate wafer 1 produce at their intersections quadratic holes 7 where the width of grooves 12, 13 equals the length of edges of holes 7. Rectangular hole shapes are created with differing groove widths.
  • V-shaped groove profiles diamond-shaped holes 7 are obtained whose size increases with the depth of the grooves on the front and back side 12, 13.
  • Rounded groove profiles produces holes 7 having round hole shapes.
  • the perforated area coverage relative to the overall wafer area can be adjusted selectively over broad ranges, depending on application, by shaping and dimensioning the groove spacing and hole size as necessary. The limit on the perforation area coverage is determined by the required mechanical stability of the solar cell.
  • Some methods for producing grooves 12, 13 on substrate wafer 1 are now discussed with reference to FIGS. 1-4. Possible methods for creating the grooves 12, 13 depend on the type of material used and the dimensions of the grids to be created.
  • grooves 12, 13, specifically with V-shaped profiles can be fashioned in the wafer base, utilizing the anisotropic etching behavior of alkaline and organic etches and incorporating photolithographic process steps.
  • the angle inscribed by two successive cuts can be adjusted between 0° and 90° with an accuracy of 0.001°.
  • the feed velocity of the saw blade in scanning may range up to 300 mm/s.
  • Materials for which the saw blades are presently offered for cutting come under the large class of short-chipping materials. They include all popular semiconductor materials, notably silicon, ceramic, ferrites, glasses, precious stones and all short-chipping metals, such as molybdenum, titanium, etc.
  • V-shaped pointed saw blades are offered with tip angle freely selectable across a broad range of angles.
  • the commercially available cut-off saw blades have minimal thicknesses up to 7 ⁇ m, whereas profiled saw blades are presently available with minimal thicknesses up to 100 ⁇ m.
  • the multiple blade method is employed, with up to 100 saw blades mounted on one spindle.
  • a roll type element is provided across the entire circumference and entire length of a base material, optionally by means of precision mechanics methods, with the negative profile of the future groove structure and subsequently coated with abrasive grains (e.g., consisting of diamond, boron nitride, silicon carbide etc.).
  • abrasive grains e.g., consisting of diamond, boron nitride, silicon carbide etc.
  • Suitable base materials for the base element are metals (e.g., soft steels, aluminum, bronze, etc.) but also ceramics and special plastics. It is also possible to fashion the structuring roll directly from the respective abrasive.
  • FIG. 2a shows a sectional view of structuring roll 20 with a negative profile consisting of V-shaped grooves 22.
  • the structuring roll 20 can be mounted on a flange of a spindle rotating at high speed.
  • Structuring roll 24 with a solid body as shown in FIG. 2b would be joined, via two suspension points, directly to the drive unit of a high-speed motor.
  • the diamond cutting method developed by Bier et al. (9) for micromechanical machining of metal elements suggests itself generally for creating the V-shaped grooves, respectively the negative profiles in the structured rolls, in which method structures in the range of minimally 10 ⁇ m are cut, in a metal body rotating at high speed, with the aid of a precision-ground diamond mounted on a CNC-controlled XYZ-table.
  • the metal roll profiled in this manner is subsequently coated with abrasive grains.
  • This may be carried out electrochemically using commercial techniques, where one or several 10- ⁇ m coats of diamond powder embedded in a binder matrix (for instance nickel) are applied. Coating by means of sintering is conceivable as well.
  • a binder matrix for instance nickel
  • FIG. 4 illustrates a structured roll 32 consisting of an unprofiled smooth metal element coated with an abrasive layer.
  • Structured roll 32 is of a type particularly suited for processing silicon wafers produced by low-cost ribbon casting.
  • silicon wafers or ribbons of such manufacture e.g., Bayer RGS or S-Web Silicon
  • planarization of the wafer surface with simultaneous removal of the silicon oxide coat and contaminated near-surface layers is achieved. This avoids the said problems and boosts the quality of silicon wafers made by ribbon casting.
  • Crystalline silicon wafers (mono- or polycrystalline) serve as base material for the manufacturing process of the solar cell, with the wafer size and surface properties as well as material grade not being required to meet specific requirements.
  • Base materials suitable for processing are:
  • polycrystalline silicon ribbons made by precipitation from a silicon melt with a graphite lattice
  • polycrystalline Si wafers obtained by precipitation of liquid silicon onto graphite slabs using a casting frame.
  • V-shaped grooves 12, 13 (preferably 90°) arranged on the from and back sides at a relative angle are created on both sides of the silicon wafer with the aid of a saw type forming element rotating at high speed and provided with pointed profiles (e.g., diamond saw blades extending into a point, mounted on a conventional silicon wafer saw or a structuring roll).
  • the V-shaped grooves 12, 13 may be created using the devices illustrated in FIGS. 1-3.
  • the depth of grooves 12, 13 depends on:
  • contact ridges 14, 15 are provided on one side of substrate wafer 1 as shown in FIG. 11.
  • the structuring of the back side of the solar cell shown in FIG. 12 is used. This contact ridge arrangement is obtained by fashioning a first set of V-shaped grooves 13 that extend parallel to one another. Next, a second set of parallel grooves 13 is created in a second structuring step, with the direction of the first set of grooves 13 inscribing an angle with the second set of grooves 13.
  • the contact ridges 14 extending laterally in a point, of the one side, are n ++ -doped while the opposite set of ridges 15 are p ++ -doped. Achieved thereby is a contact ridge arrangement, suitable for back contact solar cells, of meshing contacts of alternating charge carrier type (n ++ -p ++ -n ++ ).
  • the electrical connection of the individual contact ridges 14, 15 of same charge carrier type is greatly simplified by the provision of bus bars 16, 17, in the present contact ridge arrangement on the outer edge of the back side of the solar cell.
  • the sawed Si substrate may be treated in a so-called “damage getter” step, possibly in conjunction with phosphorus (“phosphorus gettering”), to the effect of augmenting the minority charge carrier diffusion length mentioned above.
  • the defects induced in the silicon by fashioning the grooves 12, 13 are removed in a following etching step.
  • a layer depending on the grain size of the abrasive used--typically 10-20 ⁇ m thick-- is etched away on both sides of the sawed silicon wafer.
  • Suitable etches are both acid mixtures (e.g., hydrofluoric acid HF (50%), nitric acid HNO 3 (70%), acetic acid CH 3 COOH (100%) with a volume ratio of 3:43:7; etching dwell 7 to 13 minutes) and alkaline solutions (e.g., KOH or NaOH solutions).
  • the emitter coating 2, 8 of the solar cell is produced surface-wide, by phosphorus diffusion, on both sides of the substrate wafer 1 (in this case p-doped).
  • the preference of p-conducting silicon wafers over n-doped base material is based on the easier manufacture as well as better surface passivation of the diffused n-layers.
  • Thermal oxidation of the silicon material follows as the next process step.
  • the oxide layer 3 obtained thereby enables with film thickness optimization also an antireflection effect.
  • the thermal oxidation can selectively be followed by a whole-area coating with a nitride (for instance, SiN). Obtained thereby is a more effective antireflection coating as compared to silicon oxide and a more efficient diffusion barrier in the following, heavy n-diffusion and p-diffusion for the emitter and basis regions.
  • the oxide layer 3, respectively oxide and antireflection coating, at the top of contact ridges 6, 9 is removed for that purpose. This may be handled by means of a mechanical polishing process or by backfilling the grooves 12, 13 with an etch stop and subsequent removal of oxide layer 3 (respectively nitride) with the aid of appropriate etch solutions.
  • the contact finger regions are opened by means of photolithographic steps. Diffusion procedures with high dopant concentration are then carried out on the cell, on the one side a heavy n ++ -doping (selective emitter 2) and on the other a p ++ -doping (basis). An n ++ -coating and p ++ -coating are respectively created in the contact area 4A, 11A, rid of oxide layer 3, at which time the actual high-temperature diffusion step may take place as well. The remainder of the solar cell surface is protected from undesirable diffusion of the dopants in the emitter coating 2, 8 beneath it, by the oxide layer 3 or, as the case may be, silicon nitride.
  • the finger metallization may be produced now by non-electrical plating (e.g., Pd-Ni, Pd-Ni-Cu, Pd-Ni-Ag etc.).
  • Another metallizing concept for the solar cell structure shown in FIG. 5 is the roll printing method illustrated in FIG. 13, which is closely related to the screen printing technology.
  • a roll 18 preferably of hard rubber
  • a metallic paste corresponding to that used in screen printing is rolled directly on the protruding silicon ridges 6A, 9A and processed further accordingly.
  • Favorable in this method are the possible manufacture of minutest contact fingers 5, 10, easy transfer to industrial solar cell processing, as well as the proximity to the industrially proven screen printing technology.
  • the contact fingers 5, 10 are joined and the cells wired. This is accomplished, e.g., with the use of a solderable finger metallization, by soldering connector strips in place which at the same time represent the so-called "bus bar.”
  • the popular methods for producing the contact finger metallization of a crystalline solar cell include:
  • substrate wafer 1 is coated with a layer of positive photoresist in a spin-on, dipping or spray operation.
  • the direction of pull in the dipping process should be at an angle of 45° to the groove direction, in order to accomplish a uniform wetting of the substrate wafer 1.
  • exposure is carried out according to FIG. 14 in an illuminating field of homogeneous intensity distribution.
  • the effect of the oblique light incidence is that only a narrow strip is exposed at the top of a groove flank, since the grooves 12, 13 preceding in the ray direction shade those that follow.
  • the same exposure is then performed on the opposite solar cell side.
  • the exposed photoresist area is now removed in accordance with manufacturer references. With the unexposed photoresist as etch stop, the part of the solar cell surface intended for subsequent metal coating is then rid of thermal oxide layer 3 with the use of etches containing hydrofluoric acid.
  • a selective diffusion is carried out in the contact areas 4A, 11A, whereby on one side of the solar cell an n ++ -doped contact area 4A is created, a p ++ -doped area 11A on the opposite side.
  • the metal coating is then carried out. For one, this may be a plating process utilizing the effect of a selective precipitation of metal from aqueous salt solutions on silicon rid of oxide, thus obtaining metal precipitations on the surfaces of the solar cell from which previously the thermal SiO 2 was removed.
  • the desired thickness of the Ni coating allows a relatively free selection, depending on the dwell in the plating bath.
  • the chemical nickel plating for improving the electrical conductance properties of the contact fingers 5A, 10A may be followed by a copper plating process or silver plating of the nickel-plated areas.
  • Suitable as an alternative metallizing method is also metal vaporization.
  • the substrate wafer 1--similar to exposure of the photoresist-- is tilted relative to the direction of vaporization (FIG. 14).
  • the angle ⁇ d between the surface normal of the solar cell and the direction of vaporization should equal or be somewhat smaller than the exposure angle ⁇ b (FIG. 13, 14).
  • a whole-area exposure of the cell surface with the bonding metal may be performed, which coating is in a following acetone treatment removed in a lift-off step from all those spots in which photoresist was still present.
  • a heat treatment for tempering of the contacts may follow.
  • the metal fingers are joined by a "bus bar" according to the manufacturing process described before. With plating chosen as metallizing method, this operation may be integrated in the creation of the contact fingers 5A, 10A.
  • a strip of photoresist whose width depends on the cell size is exposed, after completed oblique irradiation of the photoresist at a now perpendicular light incidence with the use of a strip mask, orthogonally to the direction of the contact fingers 5A, 10A.
  • the method presented is advantageous in that both the application of the photoresist is easy to handle and the exposure is greatly facilitated by elimination of photolithographic mask adjustment.
  • the operating mode of the present solar cell is now described with reference to FIG. 16.
  • Light falling on the solar cell is very efficiently captured by the V-shaped profile of grooves 12, 13 on the surface of the solar cell of the present invention.
  • the efficient capture is based both on multiple reflections of the incident rays on the walls of grooves 12, 13 and on the deflection of the radiation share transmitted in the solar cell of the perpendicular direction of incidence, whereby the radiation share is very effectively captured inside the solar cell by shortfall of the limit angle of the total reflection.
  • the path of the incident rays is illustrated with the aid of FIG. 16 with V-shaped grooves 12, 13 arranged on the front and back side at a relative angle (+), with the holes 7 according to the invention omitted for enhanced clarity.
  • a ray of long-wave light is absorbed by solar cell material only poorly and, in a conventional solar cell, issues again on the front side after passing through the cell thickness twice with reflection on the metallized (i.e., mirrored) back side.
  • the captured light ray 40 is on the back side 41 of the cell deflected from the plane of incidence 43, as schematically illustrated, falls then on a further back side 42 surface and thus travels a relatively long path in the solar cell, thereby considerably increasing the probability of absorption and, thus, the sensitivity of the present solar cell in the infrared.
  • Optical losses occur, for one, with perpendicular light incidence due to the holes 7 that exist in the presented structure; for another, in the embodiment I, by reflection losses on the contact fingers 5.
  • the share of the area covered by holes 7 amounts to 0.25 percent (4%).
  • the area which in embodiment I is insensitive due to bonding metallization can be estimated as follows: assuming a ridge spacing a (FIG. 6) of 400 ⁇ m and a ridge width f of 10 ⁇ m, the ratio of the metal-coated area to the total area is 2.5%.
  • no losses of light power occur on the contact fingers 5, since the incident radiation is reflected directly into a bordering groove 12 and can be captured for generation of electrical power.
  • no shading losses are to be expected from cell metallization due to the placement of contact fingers 10 on the back side of the solar cell.
  • the electrons that proceeded to the emitter area are now dissipated via the metal fingers 5 located over an n ++ -doped area 4, and via the bus bar 16, to an outer circuit.
  • the part of the electrons generated on the cell side opposite the n ++ contact zone must flow through the holes 7 connecting the two sides electrically. This resembles a principle that was used with the polka dot solar cell (10, 11) that was produced on monocrystalline silicon with the aid of photolithographic methods.
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