US5291178A - Film-type resistor assembly with full encapsulation except at the bottom surface - Google Patents

Film-type resistor assembly with full encapsulation except at the bottom surface Download PDF

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Publication number
US5291178A
US5291178A US07/852,580 US85258092A US5291178A US 5291178 A US5291178 A US 5291178A US 85258092 A US85258092 A US 85258092A US 5291178 A US5291178 A US 5291178A
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United States
Prior art keywords
heatsink
substrate
synthetic resin
resistive film
trace
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Expired - Lifetime
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US07/852,580
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English (en)
Inventor
Milton J. Strief
David L. Martin
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Caddock Electronics Inc
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Caddock Electronics Inc
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Priority to US07/852,580 priority Critical patent/US5291178A/en
Assigned to CADDOCK ELECTRONICS, INC. reassignment CADDOCK ELECTRONICS, INC. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: MARTIN, DAVID L., STRIEF, MILTON J.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks

Definitions

  • a power resistor having a relatively thick copper base that serves not only as the heatsink but as the structural-support component of the resistor.
  • a portion of this heatsink-base is apertured for mounting by a bolt to the underlying chassis.
  • the remaining portion is indented in comparison to the first-mentioned portion, and has a ceramic substrate bonded thereto.
  • a resistive film is provided on the side of the substrate remote from the heatsink. The film is connected to termination leads by metallization traces and solder.
  • the substrate and the lead ends, and only part of the heatsink-base, are encapsulated in silicone molding compound, in such manner that the bottom surface of the heatsink-base----and the entire heatsink-base in the region of the bolt aperture----are exposed.
  • the bottom heatsink surface is in flatwise contact with the chassis.
  • the power rating of the present resistor is at least double that of the earlier one referred to in the preceding paragraphs, yet the overall area of the present resistor (bottom surface) is less than 14% higher than that of the earlier one.
  • the cost per watt of power rating of the present resistor is about one-half that of the earlier resistor referred to in the preceding paragraphs, in that there is less copper and less difficulty of assembly.
  • the resistor of this invention there is a relatively thin copper heatsink having little mechanical strength, and being capable of being readily directly engaged with the chassis for efficient transfer of heat to it.
  • the heatsink is rectangular and not indented.
  • the underside of the substrate is bonded to the upper surface of the heatsink in efficient heat-transfer relationship.
  • a resistive film is applied to the upper surface of the substrate.
  • the entire substrate and film, and all portions of the heatsink except its bottom surface, are molded into a synthetic resin body.
  • a region remote from leads the inner portions of which are also molded into the resin there is a mounting hole provided through the synthetic resin and the heatsink.
  • the heatsink thickness is such that it is quite thin and not mechanically strong.
  • the primary mechanical strength is provided by the synthetic resin, a portion of the resin supporting not only the heatsink but the ceramic substrate which is also quite thin.
  • the substrate portion of the resistor is the electrical insulator between film and heatsink.
  • the substrate is effectively bonded to the heatsink for thermal conductivity therebetween.
  • the heatsink and substrate are both quite thin, the strength they do have is employed effectively in maintaining the synthetic resin bonded therewith in effective encapsulating and strengthening relationship.
  • the heatsink and substrate have substantially the same width, and synthetic resin engages and bonds with the extreme edges thereof and of the bond region between them.
  • FIG. 1 is an isometric view of a resistor incorporating the present invention
  • FIG. 2 is a vertical sectional view of the resistor of FIG. 1, taken on line 2--2 of FIG. 3, various deposited layers being shown but not to scale;
  • FIG. 3 is a horizontal sectional view of the resistor on line 3--3 of FIG. 2;
  • FIG. 4 is a plan view of the substrate having termination traces and pads thereon;
  • FIG. 5 is a view corresponding to FIG. 4 and also showing thee resistive film
  • FIG. 6 is a view corresponding to FIGS. 4 and 5 and also showing the overglaze.
  • FIG. 7 is a greatly enlarged fragmentary horizontal sectional view, not to scale, showing bonding layers between the substrate and the heatsink.
  • the resistor combination comprises a ceramic substrate 10 that is bonded to a metal heatsink 11.
  • Metallization traces 12 and a resistive film 13 are provided on the side of substrate 10 remote from heatsink 11.
  • a coating 14 is provided over the traces 12 and the film 13, namely on the great majority of the side of substrate 10 remote from the heatsink.
  • Leads or pins 15 are soldered to traces 19.
  • a body 17 of synthetic resin is molded around all parts of the above-specified elements excepting the outer portions of leads 15, and excepting the bottom surface of heatsink 11----which bottom surface is exposed so as to be engageable flatwise with an underlying chassis.
  • Substrate 10 is a flat ceramic rectangle or square, having parallel upper and lower surfaces, that is thin but is strong if not scribed. It is a good electrical insulator and is a relatively good thermal conductor.
  • the preferred ceramic is aluminum oxide. Other less-preferred ceramics include beryllium oxide and aluminum nitride.
  • the substrate 10 is sufficiently thick to be handled without substantial danger of breakage, and to augment the integrity and strength of the present combination as stated below. It is sufficiently thin to have good heat-transmission capability.
  • the preferred thickness is about three-hundredths of an inch, for example 0.030 inch.
  • each strip-pad combination is generally L-shaped, with the pads extending towards each other and being separated from each other by a substantial gap 21.
  • the outer edges of the strip-pad combinations are parallel to and spaced short distances inwardly from the extreme edges of the substrate 10, as shown.
  • the resistive film 13 is screen-printed onto the same side of substrate 10, with the side edge portions of the film 13 overlapping and in contact with inner edge portions of termination strips 18.
  • the deposited resistive film 13 is, in the example, substantially square.
  • the edges of film 13 nearest pads 19 are spaced therefrom at gaps 23.
  • the edge of film 13 remote from gaps 23 is spaced inwardly from the corresponding edge of substrate 10, the spacing being somewhat more than the spacing of the ends of termination strips 18 from such edge.
  • the coating 14 is provided over resistive film 13, being preferably a layer of fused glass (overglaze).
  • overglaze a layer of fused glass
  • the overglaze 14 extends beyond the resistive film, occupying an elongate area at the edges of gaps 21 and 23.
  • the overglaze is also applied to the substrate along the edge remote from gaps 21 and 23, as shown at the right in FIG. 6.
  • the termination strip-pad combinations are, for example, a palladium-silver metallization deposited by screen-printing, as stated, and then fired. Thereafter, the resistive film 13 is applied by screen-printing, this film being preferably a thick film composed of complex metal oxides in a glass matrix. After deposition of the resistive film, it is fired at a temperature in excess of 800 degrees C.
  • the overglaze 14 is a relatively low-melting-point glass frit that is screen-printed onto the described areas, following which it is fired at a temperature of about 500 degrees C. The distinct difference in firing temperatures between the film 13 and the overglaze 14 means that the overglaze will not adversely affect the film. The overglaze 14 prevents molded body 17 from adversely affecting the film 13.
  • this is a sheet (with parallel upper and lower surfaces) of copper that is preferably nickel plated in order to prevent corrosion.
  • Heatsink is rectangular and elongate, having----for reasons stated below----a width that is substantially the same as the width of substrate 10.
  • the length of the heatsink is much greater than that of the substrate.
  • the substrate length is about two-thirds the heatsink length.
  • heatsink 11 The thickness of heatsink 11 is sufficient that it conducts a substantial amount of heat longitudinally of the resistor.
  • the heatsink is sufficiently thin that it conducts heat very readily from the ceramic to the chassis, and so that the heatsink does not have much structural strength. However, when the heatsink is combined with the ceramic substrate the combination does have significant strength in cooperation with the strength of body 17.
  • Heatsink 11 is sufficiently thick that, when it is held down in the mold for body 17, by pins (not shown) located at approximately the right third (FIGS. 1 and 3) of the heatsink, the entire bottom surface of the heatsink is in flatwise bearing engagement with the flat bottom mold surface.
  • Such bottom heatsink surface lies in a single plane, and no synthetic resin passes beneath it.
  • the mold pins make notches 24, shown in FIGS. 1 and 3, in which parts of the heatsink 11 are exposed (FIG. 1).
  • the preferred thickness of heatsink is about three-hundredths of an inch, preferably 0.032 inch.
  • the length of the heatsink is about one-half inch, namely 0.540 inch.
  • the width of the heatsink and of the substrate 10 is about one-third of an inch, namely 0.330 inch.
  • the adjacent surfaces of substrate 10 and heatsink 11 are bonded together to maximize heat transfer therebetween, even when the resistor is used in a vacuum.
  • the bonding also adds strength to the assembly.
  • the preferred manner of effecting the bonding is to screenprint metallization (preferably palladium-silver) on the entire back or bottom surface of substrate 10, as shown at 25 in FIG. 7.
  • the substrate is then fired.
  • the metallization layer on the back of the substrate is deposited and fired either before or after the termination strips 18 and pads 19 are deposited and fired. Firing is preferably separate relative to the metallizations on the front and back of the substrate. All metallizations are applied and fired before the resistive film and overglaze are applied and fired.
  • the heatsink 11 is nickel plated, and this is done on both the upper and lower sides.
  • the nickel layer is shown at 26 in FIG. 7.
  • a layer of solder, 27, is then screen-printed onto the metallization 25 on the back of the substrate 10, at all regions. Then, the substrate 10 is located precisely on heatsink 11, so that the termination strips 18 are parallel to the side edges of the heatsink, as distinguished from the end edges thereof.
  • One edge of heatsink 11 is caused to be in registry with that edge (shown at the left in FIG. 6) of the substrate 10 that is nearest the pads 19. Side edges of heatsink 11 and side edges of substrate 10 are caused to be registered, respectively.
  • the substrate 10 is then clamped to the heatsink 11 and baked in order to melt the solder 27a and effect the bonding.
  • the solder 27 employed is preferably 96.5% tin and 3.5% silver.
  • each lead 15 is numbered 28, being adapted to seat on a pad 19.
  • Such inner ends 28 connect to relatively wide portions, which in turn connect at shoulders to narrow portions adapted to be inserted and soldered in holes in a circuit board.
  • the pads 19 are screen-printed with the above-specified solder, following which the inner ends 28 of leads 26 are located and clamped thereon. Then, the combination is baked in order to melt the solder and complete the soldering operation.
  • the leads may be connected to pads 19 at the same time that the heatsink is bonded to the substrate, or these operations may be separate.
  • the body 17 of synthetic resin is molded around all sides thereof except the bottom surface of heatsink 11. As shown in FIG. 2, the top surface 31 of the molded body 17 is parallel to the bottom surface of heatsink 11. As shown in FIGS. 1-3, the molded body has generally vertical side surfaces 32,33 and end surfaces 35,36. However, the side and end surfaces 35 and 36 are bevelled, for example as shown in FIG. 2. The bottom of the body 17 is planar, and flush with the bottom of the heatsink.
  • Side surfaces 32,33 are respectively spaced substantial distances outwardly from the edges of the substrate and heatsink; and end surfaces 35,36 are respectively spaced substantial distances outwardly from the end of the heatsink (at the outer end of the resistor) and heatsink-substrate combination (at the inner end thereof).
  • Molded body 17 is rectangular and elongate, and has its axis parallel to that of the substrate-heatsink combination.
  • the length of the body is about two-thirds inch, namely 0.640 inch, and the width thereof is about four-tenths inch, namely 0.410 inch.
  • the thickness of the body, from the bottom of the heatsink to the top surface 31, is about one-eighth inch, namely 0.125 inch.
  • Body 17 is formed of a rigid epoxy.
  • the body is formed of high thermal-conductivity rigid epoxy in some of the resistors, but not in many other of the resistors. Whether or not high thermal-conductivity resin is used depends upon the particular application.
  • the vast majority of the heat passes downwardly from resistive film 13 through substrate 10 and heatsink 11 into the chassis. Much of the heat flows to the right as viewed in FIGS. 2 and 3, into the heatsink region that is not beneath the substrate.
  • a substantially cylindrical hole 38 is provided in and substantially centered in that portion of synthetic resin body 17 that does not overlie the substrate.
  • Such hole has a diameter (for example, 0.125 inch) that is smaller than the diameter of a recess 39 centered in that edge of heatsink 11 remote from the leads.
  • the recess 39 has a generally U-shaped side surface (FIG. 3), the rounded "bottom" of which is coaxial with hole 38.
  • the heatsink has a relatively large area, and (FIG. 3) is not indented at the region where the substrate 10 is located; this is one of the factors causing a high power rating to occur.
  • the molded body 17, substrate 10 and heatsink 11 combine to cause the combination to have substantial strength without employing a thick and expensive metal heatsink.
  • One reason there is no need for an indented or thick heatsink, or an undercut heatsink, is the above-described substantially flush relationship between the outer edges of substrate 10 and heatsink 11. These edges, and the small space or rough region at the outer edges of the bond between the substrate and heatsink, create somewhat rough gripping areas for the synthetic resin forming body 17, so that the heatsink and substrate do not tend to separate from the synthetic resin.
  • the substrate is somewhat wider than the heatsink, so that the side edges of the heatsink (those edges extending parallel to the leads or pins) are undercut relative to the substrate edges.
  • the present resistor is mounted on a chassis by providing a washer above hole 38, inserting a bolt through it and clamping down.
  • the bolt creates the greatest pressure at the region outwardly (to the right) from substrate 10 and the resistive film thereon, but there is also adequate pressure at the underside of the heatsink, directly below the substrate, to cause effective conduction of heat into the chassis at that region.
  • a small amount of thermal grease is preferably employed between the heatsink and chassis.
  • a slot 43 is laser-cut through film 13 perpendicularly to traces 18, which traces are parallel to each other. The width of such slot is increased until the exact desired resistance value is obtained. Slot 43 is parallel to the direction of current flow between traces 18 through the resistive film, and this is highly beneficial vis-a-vis achieving uniformly high current density, and high power-handling capability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Details Of Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Laminated Bodies (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Surface Heating Bodies (AREA)
  • Thermistors And Varistors (AREA)
US07/852,580 1991-04-10 1992-03-17 Film-type resistor assembly with full encapsulation except at the bottom surface Expired - Lifetime US5291178A (en)

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US68330291A 1991-04-10 1991-04-10
US07/852,580 US5291178A (en) 1991-04-10 1992-03-17 Film-type resistor assembly with full encapsulation except at the bottom surface

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JP (1) JPH0760761B2 (es)
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445995A (en) * 1991-12-20 1995-08-29 Sgs-Thomson Microelectronics, S.R.L. Method for manufacturing plastic-encapsulated semiconductor devices with exposed metal heat sink
US5481241A (en) * 1993-11-12 1996-01-02 Caddock Electronics, Inc. Film-type heat sink-mounted power resistor combination having only a thin encapsulant, and having an enlarged internal heat sink
US5481242A (en) * 1994-05-10 1996-01-02 Caddock Electronics, Inc. Debris-reducing telephone resistor combination and method
US5489801A (en) * 1993-11-03 1996-02-06 Intel Corporation Quad flat package heat slug composition
US5521357A (en) * 1992-11-17 1996-05-28 Heaters Engineering, Inc. Heating device for a volatile material with resistive film formed on a substrate and overmolded body
WO1996033502A1 (en) * 1995-04-20 1996-10-24 Caddock Electronics, Inc. Heatsink-mountable power resistor having improved heat-transfer interface with the heatsink
US5594407A (en) * 1994-07-12 1997-01-14 Caddock Electronics, Inc. Debris-reducing film-type resistor and method
US5841340A (en) * 1996-05-07 1998-11-24 Rf Power Components, Inc. Solderless RF power film resistors and terminations
US5914648A (en) * 1995-03-07 1999-06-22 Caddock Electronics, Inc. Fault current fusing resistor and method
US6175150B1 (en) * 1997-04-17 2001-01-16 Nec Corporation Plastic-encapsulated semiconductor device and fabrication method thereof
KR20010088984A (ko) * 2001-08-30 2001-09-29 - 차량공조기의 팬 구동모우터 회전속도 조절용 저항기
US6476481B2 (en) * 1998-05-05 2002-11-05 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline
US20090085715A1 (en) * 2007-09-27 2009-04-02 Vishay Dale Electronics, Inc. Power resistor
US9620391B2 (en) 2002-10-11 2017-04-11 Micronas Gmbh Electronic component with a leadframe
US20170170084A1 (en) * 2015-12-15 2017-06-15 Semiconductor Components Industries, Llc Semiconductor package system and related methods
US20190066886A1 (en) * 2016-03-08 2019-02-28 Koa Corporation Resistor
US11342237B2 (en) 2015-12-15 2022-05-24 Semiconductor Components Industries, Llc Semiconductor package system and related methods

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DE9319473U1 (de) * 1993-12-17 1994-06-23 Siemens AG, 80333 München Hybridschaltungsanordnung
US20070146114A1 (en) * 2005-12-28 2007-06-28 Nelson Charles S Trim resistor assembly and method for making the same
JP5665542B2 (ja) * 2007-09-27 2015-02-04 ヴィシェイ デール エレクトロニクス インコーポレイテッド 電力抵抗器とその製造方法
DE102018101419A1 (de) * 2018-01-23 2019-07-25 Biotronik Se & Co. Kg Elektrischer Widerstand, insbesondere für medizinische Implantate
EP3544394A1 (en) 2018-03-24 2019-09-25 Melexis Technologies SA Integrated circuit lead frame design and method
US11543466B2 (en) 2018-03-24 2023-01-03 Melexis Technologies Sa Magnetic sensor component and assembly
CN114252820A (zh) * 2020-09-24 2022-03-29 迈来芯电子科技有限公司 磁传感器部件和组件

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JPS63205935A (ja) * 1987-02-23 1988-08-25 Toshiba Corp 放熱板付樹脂封止型半導体装置
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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445995A (en) * 1991-12-20 1995-08-29 Sgs-Thomson Microelectronics, S.R.L. Method for manufacturing plastic-encapsulated semiconductor devices with exposed metal heat sink
US5521357A (en) * 1992-11-17 1996-05-28 Heaters Engineering, Inc. Heating device for a volatile material with resistive film formed on a substrate and overmolded body
US5489801A (en) * 1993-11-03 1996-02-06 Intel Corporation Quad flat package heat slug composition
US5481241A (en) * 1993-11-12 1996-01-02 Caddock Electronics, Inc. Film-type heat sink-mounted power resistor combination having only a thin encapsulant, and having an enlarged internal heat sink
US5481242A (en) * 1994-05-10 1996-01-02 Caddock Electronics, Inc. Debris-reducing telephone resistor combination and method
US5594407A (en) * 1994-07-12 1997-01-14 Caddock Electronics, Inc. Debris-reducing film-type resistor and method
US5914648A (en) * 1995-03-07 1999-06-22 Caddock Electronics, Inc. Fault current fusing resistor and method
US6253446B1 (en) 1995-03-07 2001-07-03 Richard E. Caddock, Jr. Fault current fusing resistor and method
WO1996033502A1 (en) * 1995-04-20 1996-10-24 Caddock Electronics, Inc. Heatsink-mountable power resistor having improved heat-transfer interface with the heatsink
US5841340A (en) * 1996-05-07 1998-11-24 Rf Power Components, Inc. Solderless RF power film resistors and terminations
US6175150B1 (en) * 1997-04-17 2001-01-16 Nec Corporation Plastic-encapsulated semiconductor device and fabrication method thereof
US6476481B2 (en) * 1998-05-05 2002-11-05 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline
US6667547B2 (en) 1998-05-05 2003-12-23 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline
KR20010088984A (ko) * 2001-08-30 2001-09-29 - 차량공조기의 팬 구동모우터 회전속도 조절용 저항기
US9620391B2 (en) 2002-10-11 2017-04-11 Micronas Gmbh Electronic component with a leadframe
US7843309B2 (en) 2007-09-27 2010-11-30 Vishay Dale Electronics, Inc. Power resistor
US20110063071A1 (en) * 2007-09-27 2011-03-17 Vishay Dale Electronics, Inc. Power resistor
US8319598B2 (en) 2007-09-27 2012-11-27 Vishay Dale Electronics, Inc. Power resistor
US20090085715A1 (en) * 2007-09-27 2009-04-02 Vishay Dale Electronics, Inc. Power resistor
US20170170084A1 (en) * 2015-12-15 2017-06-15 Semiconductor Components Industries, Llc Semiconductor package system and related methods
CN106887415A (zh) * 2015-12-15 2017-06-23 半导体元件工业有限责任公司 半导体封装系统和相关方法
US10825748B2 (en) * 2015-12-15 2020-11-03 Semiconductor Components Industries, Llc Semiconductor package system and related methods
US11342237B2 (en) 2015-12-15 2022-05-24 Semiconductor Components Industries, Llc Semiconductor package system and related methods
CN106887415B (zh) * 2015-12-15 2022-07-12 半导体元件工业有限责任公司 半导体封装系统和相关方法
US20190066886A1 (en) * 2016-03-08 2019-02-28 Koa Corporation Resistor
US10896775B2 (en) * 2016-03-08 2021-01-19 Koa Corporation Resistor

Also Published As

Publication number Publication date
EP0508615A1 (en) 1992-10-14
DK0508615T3 (da) 1998-02-02
JPH05101902A (ja) 1993-04-23
JPH0760761B2 (ja) 1995-06-28
EP0508615B1 (en) 1997-07-02
ATE154990T1 (de) 1997-07-15
ES2103341T3 (es) 1997-09-16
DE69220601D1 (de) 1997-08-07
DE69220601T2 (de) 1997-10-23

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