US3421956A - Method of etching sic - Google Patents
Method of etching sic Download PDFInfo
- Publication number
- US3421956A US3421956A US436918A US43691865A US3421956A US 3421956 A US3421956 A US 3421956A US 436918 A US436918 A US 436918A US 43691865 A US43691865 A US 43691865A US 3421956 A US3421956 A US 3421956A
- Authority
- US
- United States
- Prior art keywords
- etching
- silicon carbide
- melt
- etched
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title description 18
- 238000000034 method Methods 0.000 title description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 12
- 235000010288 sodium nitrite Nutrition 0.000 description 6
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5361—Etching with molten material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
Definitions
- This invention relates to a method of etching silicon carbide.
- etching technique In the fabrication of semiconductor elements, such as diodes, transistors or similar components, extensive use is made of the etching technique since like hardly any other material processing technique it makes possible the processing of small and very small bodies in a simple manner.
- a particular advantage of this technique resides in the fact that, by using etchants reacting exclusively or preferably with certain given materials, it is possible to effect a zone selection when bodies consisting dilferent substances or masks consisting of suitable substances are employed.
- etchants and etching techniques For the numerous semiconductor substances that have been disclosed so far and for the various problems arising in processing them, a large variety of etchants and etching techniques have been provided with which it has been possible to obtain optimum results in the individual fields.
- this invention provides a method of etching silicon carbide in which the bodies or surfaces to be etched, after having first been lapped by mechanical means to a roughness of preferably below 1 micron, cleaned by ultrasonic treatment, washed with HFHNO and rinsed with aqua destillata and alcohol, are placed into a melt consisting of Na O and NaNO
- An especially advantageous temperature range has proved to be that between 400 C. and 600 C.
- a 1:1 mixture ratio of the said substance has shown to be favorable, but other mixture ratios are also possible which for special applications may in certain circumstances deviate greatly from the 1:1 ratio.
- the silicon carbide bodies etched by this technique are eroded symmetrically and exhibit perfectly planar surfaces.
- a melt consisting essentially of sodium peroxide and sodium nitrite; the weight ratio between the sodium peroxide and sodium nitrite being on the order of 1 to 1; and maintaining contact between said surface and said melt until the desired amount of etching has taken place; said melt being maintained during the etching step at a temperature between about 400 C. and 600 C.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEJ25392A DE1242972B (de) | 1964-03-06 | 1964-03-06 | Verfahren zum AEtzen von SiC |
Publications (1)
Publication Number | Publication Date |
---|---|
US3421956A true US3421956A (en) | 1969-01-14 |
Family
ID=7202205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US436918A Expired - Lifetime US3421956A (en) | 1964-03-06 | 1965-03-03 | Method of etching sic |
Country Status (5)
Country | Link |
---|---|
US (1) | US3421956A (fr) |
AT (1) | AT251651B (fr) |
DE (1) | DE1242972B (fr) |
FR (1) | FR1439074A (fr) |
GB (1) | GB1023749A (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
US3878005A (en) * | 1973-06-18 | 1975-04-15 | Rockwell International Corp | Method of chemically polishing metallic oxides |
US4465550A (en) * | 1982-06-16 | 1984-08-14 | General Signal Corporation | Method and apparatus for slicing semiconductor ingots |
US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US5725413A (en) * | 1994-05-06 | 1998-03-10 | Board Of Trustees Of The University Of Arkansas | Apparatus for and method of polishing and planarizing polycrystalline diamonds, and polished and planarized polycrystalline diamonds and products made therefrom |
US8609323B2 (en) | 2009-12-01 | 2013-12-17 | University Of Massachusetts | System for producing patterned silicon carbide structures |
CN104505338A (zh) * | 2014-12-24 | 2015-04-08 | 国家电网公司 | 一种碳化硅晶片外延前预清洗方法 |
-
1964
- 1964-03-06 DE DEJ25392A patent/DE1242972B/de active Pending
-
1965
- 1965-02-12 GB GB4795/65A patent/GB1023749A/en not_active Expired
- 1965-02-23 AT AT159865A patent/AT251651B/de active
- 1965-03-03 US US436918A patent/US3421956A/en not_active Expired - Lifetime
- 1965-03-03 FR FR7738A patent/FR1439074A/fr not_active Expired
Non-Patent Citations (1)
Title |
---|
None * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
US3878005A (en) * | 1973-06-18 | 1975-04-15 | Rockwell International Corp | Method of chemically polishing metallic oxides |
US4465550A (en) * | 1982-06-16 | 1984-08-14 | General Signal Corporation | Method and apparatus for slicing semiconductor ingots |
US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5725413A (en) * | 1994-05-06 | 1998-03-10 | Board Of Trustees Of The University Of Arkansas | Apparatus for and method of polishing and planarizing polycrystalline diamonds, and polished and planarized polycrystalline diamonds and products made therefrom |
US8609323B2 (en) | 2009-12-01 | 2013-12-17 | University Of Massachusetts | System for producing patterned silicon carbide structures |
CN104505338A (zh) * | 2014-12-24 | 2015-04-08 | 国家电网公司 | 一种碳化硅晶片外延前预清洗方法 |
CN104505338B (zh) * | 2014-12-24 | 2017-11-07 | 国家电网公司 | 一种碳化硅晶片外延前预清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
AT251651B (de) | 1967-01-10 |
FR1439074A (fr) | 1966-05-20 |
DE1242972B (de) | 1967-06-22 |
GB1023749A (en) | 1966-03-23 |
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