FR1439074A - Procédé d'attaque chimique de carbure de silicium - Google Patents
Procédé d'attaque chimique de carbure de siliciumInfo
- Publication number
- FR1439074A FR1439074A FR7738A FR7738A FR1439074A FR 1439074 A FR1439074 A FR 1439074A FR 7738 A FR7738 A FR 7738A FR 7738 A FR7738 A FR 7738A FR 1439074 A FR1439074 A FR 1439074A
- Authority
- FR
- France
- Prior art keywords
- silicon carbide
- etching process
- carbide etching
- silicon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5361—Etching with molten material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ25392A DE1242972B (de) | 1964-03-06 | 1964-03-06 | Verfahren zum AEtzen von SiC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1439074A true FR1439074A (fr) | 1966-05-20 |
Family
ID=7202205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7738A Expired FR1439074A (fr) | 1964-03-06 | 1965-03-03 | Procédé d'attaque chimique de carbure de silicium |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3421956A (fr) |
| AT (1) | AT251651B (fr) |
| DE (1) | DE1242972B (fr) |
| FR (1) | FR1439074A (fr) |
| GB (1) | GB1023749A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
| US3878005A (en) * | 1973-06-18 | 1975-04-15 | Rockwell International Corp | Method of chemically polishing metallic oxides |
| US4465550A (en) * | 1982-06-16 | 1984-08-14 | General Signal Corporation | Method and apparatus for slicing semiconductor ingots |
| US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
| US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
| US5725413A (en) * | 1994-05-06 | 1998-03-10 | Board Of Trustees Of The University Of Arkansas | Apparatus for and method of polishing and planarizing polycrystalline diamonds, and polished and planarized polycrystalline diamonds and products made therefrom |
| WO2011068884A2 (fr) | 2009-12-01 | 2011-06-09 | University Of Massachusetts | Système de production de structures texturées en carbure de silicium |
| CN104505338B (zh) * | 2014-12-24 | 2017-11-07 | 国家电网公司 | 一种碳化硅晶片外延前预清洗方法 |
-
1964
- 1964-03-06 DE DEJ25392A patent/DE1242972B/de active Pending
-
1965
- 1965-02-12 GB GB4795/65A patent/GB1023749A/en not_active Expired
- 1965-02-23 AT AT159865A patent/AT251651B/de active
- 1965-03-03 US US436918A patent/US3421956A/en not_active Expired - Lifetime
- 1965-03-03 FR FR7738A patent/FR1439074A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3421956A (en) | 1969-01-14 |
| AT251651B (de) | 1967-01-10 |
| DE1242972B (de) | 1967-06-22 |
| GB1023749A (en) | 1966-03-23 |
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