US20190288044A1 - Electroluminescent diode array substrate, manufacturing method thereof and display panel - Google Patents

Electroluminescent diode array substrate, manufacturing method thereof and display panel Download PDF

Info

Publication number
US20190288044A1
US20190288044A1 US16/308,883 US201816308883A US2019288044A1 US 20190288044 A1 US20190288044 A1 US 20190288044A1 US 201816308883 A US201816308883 A US 201816308883A US 2019288044 A1 US2019288044 A1 US 2019288044A1
Authority
US
United States
Prior art keywords
layer
electrode
array substrate
auxiliary electrode
diode array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/308,883
Other languages
English (en)
Inventor
Wenjun HOU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HOU, WENJUN
Publication of US20190288044A1 publication Critical patent/US20190288044A1/en
Priority to US17/955,920 priority Critical patent/US20230033003A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H01L27/3246—
    • H01L51/0005—
    • H01L51/5228—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • Embodiments of the present disclosure relate to an electroluminescent diode array substrate, a method of manufacturing the electroluminescent diode array substrate, and a display panel.
  • Electroluminescent diodes have advantages of simple manufacturing process, low production cost, high light-emitting efficiency, being easy to form flexible structures, low power consumption, high color saturation, wide viewing angle, and so on.
  • a display technology by using electroluminescent diodes has become an important display technology.
  • An electroluminescent diode comprises an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED) or the like.
  • OLED organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • an organic light-emitting diode (OLED) array substrate comprises a plurality of pixel units, and each of the pixel units comprises a switching transistor, a driving transistor, an OLED display device and so on.
  • the OLED display device is a current-driven light-emitting device, and the OLED display device mainly comprises an anode, a cathode and an organic material functional layer.
  • the working principle of the OLED display device is that the organic material functional layer is driven by an electric field formed by the anode and the cathode, then carriers are injected and recombined to emit light.
  • the quantum dot light-emitting diode (QLED) has a similar structure to the organic light-emitting diode (OLED).
  • the main difference between the quantum dot light-emitting diode (QLED) and the organic light-emitting diode is that the luminescence center of the QLED is composed of quantum dots, and the light-emitting principle of the quantum dot light-emitting diode (QLED) is that electrons and holes are combined to form photons in a quantum dot layer, then the photons are recombined to emit light.
  • At least one embodiment of the present disclosure provides an electroluminescent diode array substrate, and the electroluminescent diode array substrate includes: a base substrate, and an auxiliary electrode, a pixel definition layer, a first electrode, a functional layer, and a second electrode which are disposed on the base substrate, and the pixel definition layer is provided with a via hole structure; the auxiliary electrode is disposed on at least one side of the via hole structure; and the second electrode is electrically connected with the auxiliary electrode.
  • an upper surface of the auxiliary electrode is higher than an upper surface of the functional layer in the via hole structure.
  • the auxiliary electrode is a structure in a U shape.
  • the auxiliary electrode is a plate-type structure; or there are a plurality of auxiliary electrodes which are spaced apart from each other.
  • a conductive polymer layer is provided in the via hole structure, and the second electrode is electrically connected with the auxiliary electrode by the conductive polymer layer.
  • a thickness of the conductive polymer layer is less than a thickness of the pixel definition layer.
  • a conductivity of the conductive polymer layer is greater than 10 ⁇ 6 S/m.
  • a material of the conductive polymer layer comprises at least one of polypyrrole, polyphenylene sulfide, polyphthalocyanine, polyaniline and polythiophene.
  • the electroluminescent diode array substrate provided by at least one embodiment of the present disclosure, further includes a planarization layer disposed between the base substrate and the pixel definition layer, and the via hole structure extends from the pixel definition layer and penetrates through the planarization layer.
  • a thickness of the conductive polymer layer is larger than a thickness of the planarization layer, and the thickness of the conductive polymer layer is smaller than a sum of the thickness of the planarization layer and a thickness of the pixel definition layer.
  • an upper surface of the conductive polymer layer is flush with an upper surface of the pixel definition layer.
  • the electroluminescent diode array substrate provided by at least one embodiment of the present disclosure, there are a plurality of via hole structures penetrating through the planarization layer and the pixel definition layer, and the second electrode is electrically connected with the auxiliary electrode by the plurality of via hole structures.
  • a thickness of the functional layer is from about 100 nm to about 300 nm
  • a thickness of the auxiliary electrode is from about 0.5 ⁇ m to about 1 ⁇ m
  • a thickness of the planarization layer is from about 1 ⁇ m to about 3 ⁇ m
  • a thickness of the pixel definition layer is from about 1 ⁇ m to about 3 ⁇ m
  • a thickness of the conductive polymer layer is from about 2 ⁇ m to about 5.7 ⁇ m.
  • the functional layer comprises at least one of a light-emitting layer, an electron injection layer, an electron transmission layer, a hole injection layer and a hole transmission layer.
  • At least one embodiment of the present disclosure further provides a display panel, and the display panel includes any one of the electroluminescent diode array substrate described above.
  • At least one embodiment of the present disclosure further provides a method of manufacturing an electroluminescent diode array substrate, and the method includes: providing a base substrate, forming an auxiliary electrode, a pixel definition layer, a first electrode, a functional layer and a second electrode on the base substrate, and the pixel definition layer is provided with a via hole structure; the auxiliary electrode is disposed on at least one side of the via hole structure; and the second electrode is electrically connected with the auxiliary electrode.
  • an upper surface of the auxiliary electrode which is formed on at least one side of the via hole structure is higher than an upper surface of the functional layer in the via hole structure.
  • the method provided by at least one embodiment of the present disclosure before forming the auxiliary electrode, further includes: forming a planarization layer on the base substrate, wherein the via hole structure extends from the pixel definition layer and penetrates through the planarization layer.
  • the method provided by at least one embodiment of the present disclosure further includes: forming a conductive polymer layer in the via hole structure, wherein the second electrode is electrically connected with the auxiliary electrode by the conductive polymer layer.
  • the conductive polymer layer is formed by an inkjet printing method.
  • FIG. 1 is a schematic sectional view of an organic light-emitting diode (OLED) array substrate
  • FIG. 2 is a schematic sectional view of an OLED array substrate provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic view of a planar structure of an OLED array substrate provided by an embodiment of the present disclosure
  • FIG. 4 is a schematic sectional view of an OLED array substrate provided by another embodiment of the present disclosure.
  • FIG. 5 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • FIG. 6 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • FIG. 7 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • FIG. 8 is a block diagram of a display panel provided by an embodiment of the present disclosure.
  • FIG. 9 is a flow diagram of a manufacturing method of an OLED array substrate provided by an embodiment of the present disclosure.
  • Electroluminescent diodes for example, organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED) are mostly current-driven devices.
  • OLED organic light-emitting diodes
  • QLED quantum dot light-emitting diodes
  • an auxiliary electrode is usually added in an electroluminescent diode display device.
  • the auxiliary electrode is formed on the electroluminescent diode array substrate, and the auxiliary electrode is electrically connected with a cathode by a via hole structure.
  • an organic material is evaporated at the via hole structure, and the organic material separates the cathode from the auxiliary electrode.
  • a quantum dot light-emitting layer is printed at the via hole structure, and the quantum dot light-emitting layer separates the cathode from the auxiliary electrode.
  • FIG. 1 is a schematic sectional view of an organic light-emitting diode (OLED) array substrate.
  • the organic light-emitting diode array substrate comprises: a base substrate 101 ; and an auxiliary electrode 102 , a planarization layer 103 , a first electrode 104 , an organic material functional layer 105 , a second electrode 106 and a pixel definition layer 108 disposed on the base substrate; and the planarization layer 103 is provided with a via hole structure 107 .
  • the second electrode 106 of the OLED array substrate is generally made of metallic silver with a thinner thickness
  • the first electrode 104 is generally made of indium tin oxide (ITO)
  • ITO indium tin oxide
  • both the resistivity of the metal silver with a thinner thickness and the resistivity of the indium tin oxide (ITO) are high, and especially for the second electrode 106 with a large area, the second electrode 106 made of the thin metal silver has a higher resistivity, and the voltage drop (IR drop) is larger; in this case, the actual driving voltage of the OLED array substrate is greatly different from a power voltage, and in a large-sized OLED display device, a large area of uneven brightness phenomenon occurs, which affects the display effect.
  • ITO indium tin oxide
  • the auxiliary electrode 102 formed on the base substrate 102 reduces the resistance of the second electrode 106 .
  • the subsequently formed organic material functional layer 105 separates the auxiliary electrode 102 from the second electrode 106 , thus the auxiliary electrode 102 can't be in parallel connect with the second electrode 106 , and can't reduce the voltage drop effectively.
  • the inventor of the present disclosure notes that changing the structural design of the auxiliary electrode can ensure that the second electrode is electrically connected with the auxiliary electrode, in this way, the auxiliary electrode electrically connected with the second electrode increases the equivalent thickness of the second electrode, thereby the resistance of the second electrode is reduced, and the problem that the large voltage drop caused by the large resistance of the second electrode in a case where the second electrode made of metallic silver with a thinner thickness is avoided, furthermore, the problem of damaging an organic light-emitting display panel due to the large voltage drop is avoided as well.
  • At least one embodiment of the present disclosure provides an electroluminescent diode array substrate, and the electroluminescent diode array substrate comprises: a base substrate, and an auxiliary electrode, a pixel definition layer, a first electrode, a functional layer, and a second electrode, which are disposed on the base substrate; the pixel definition layer is provided with a via hole structure; the auxiliary electrode is disposed on at least one side of the via hole structure; and the second electrode is electrically connected with the auxiliary electrode.
  • the embodiment of the present disclosure ensures that the second electrode is electrically connected with the auxiliary electrode by changing the structural design of the auxiliary electrode, thereby the problem of the large voltage drop in the external circuit is avoided.
  • At least one embodiment of the disclosure provides an electroluminescent diode array substrate, and the electroluminescent diode array substrate is an organic light-emitting diode (OLED) array substrate or a quantum dot light-emitting diode (QLED) array substrate.
  • OLED organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • FIG. 2 is a schematic sectional view of an OLED array substrate provided by at least one embodiment of the present disclosure.
  • the organic light-emitting diode array substrate 2 comprises: a base substrate 201 , and an auxiliary electrode 202 , a pixel definition layer 208 , a first electrode 204 , a functional layer 205 (for example, an organic material functional layer) and a second electrode 206 disposed on the base substrate 201 , the pixel definition layer 208 is provided with a via hole structure 207 , the auxiliary electrode 202 is disposed on at least one side of the via hole structure 207 , and the second electrode 206 is electrically connected with the auxiliary electrode 202 .
  • the auxiliary electrode disposed on at least one side of the via hole structure not means that the auxiliary electrode is disposed on the outside or the inside of the via hole structure, but means that the auxiliary electrode is disposed on a side wall of at least one direction of the outside side of the via hole structure.
  • an upper surface of the auxiliary electrode 202 is higher than an upper surface of the functional layer 205 of the via hole structure 207 .
  • the OLED array substrate includes a display region and a peripheral region outside the display region.
  • the display region is also referred to as an AA (Active Area), and the display region is generally used for displaying.
  • the peripheral region may be used for arranging a driving circuit, packaging a display panel, and the like.
  • the second electrode 206 is electrically connected with the auxiliary electrode 202 , and in the display region, the second electrode 206 is electrically connected with the auxiliary electrode 202 , in this way, the second electrode 206 and the auxiliary electrode 202 are connected at both ends respectively to form a parallel-connected circuit, or both ends that the second electrode 206 and the auxiliary electrode 202 connected to each other are located in the display region.
  • the auxiliary electrode 202 transmits the voltage signal simultaneously with the second electrode 206 as a branch of the voltage signal, which is equivalent to that the second electrode 206 and the auxiliary electrode 202 form the parallel-connected circuit, in this way, the resistance in the process of electrical signal transmission is reduced; or the auxiliary electrode 202 receives the voltage signal firstly, in a case where the voltage signal reaches the second electrode 206 electrically connected to the auxiliary electrode 202 , the second electrode 206 as a branch for transmitting the voltage signal simultaneously with the auxiliary electrode 202 ; or the second electrode 206 and the auxiliary electrode 202 receives the voltage signal simultaneously, the second electrode 206 and the auxiliary electrode 202 transmit the voltage signal simultaneously as two branches.
  • the OLED array substrate 2 further includes a power line, a data line and a gate line (not shown in FIG. 3 ) disposed on the base substrate 201 , a pixel structure is disposed in a region defined by the gate line and the data line intersecting with each other, for example, the pixel structure includes a switching transistor 30 , a driving transistor 40 , and an OLED device 20 , and the switching transistor 30 is connected to the gate line and the data line, the driving transistor 40 is connected to the switching transistor 30 , the power line, and the OLED device.
  • the pixel definition layer 208 is located between the first electrode 204 and the second electrode 206 , and the pixel definition layer 208 is used for isolating two sub-pixel units adjacent to each other.
  • the pixel structure, the gate line and the data line are located in the display region, in addition to the gate line and the data line, the OLED array substrate may further include a detection compensation line connecting a pixel unit and a detection integrated circuit.
  • the detection compensation line is located in the display region.
  • the upper surface of the auxiliary electrode 202 on at least one side of the via hole structure 207 is higher than the upper surface of the functional layer 205 in the via hole structure 207 , in this way, the auxiliary electrode 202 is electrically connected to the second electrode 206 through the portion of the auxiliary electrode that higher than the upper surface of the functional layer 205 in the via hole structure 207 .
  • FIG. 4 is a schematic sectional view of an OLED array substrate provided by another embodiment of the present disclosure.
  • the organic light-emitting diode array substrate further includes a planarization layer 203 disposed between the base substrate 201 and the pixel definition layer 208 , in which the via hole structure 207 extends from the pixel definition layer 208 and penetrates through the planarization layer 203 .
  • the via hole structure 207 extends from pixel definition layer 208 and penetrates through planarization layer 203 .
  • the depth of the via hole structure 207 is approximately equal to the sum of the thickness of the pixel definition layer 208 and the thickness of the planarization layer 203 .
  • the thickness of the functional layer 205 is from about 100 nm to about 300 nm, for example, the thickness of the functional layer 205 is 100 nm, 200 nm or 300 nm, etc.
  • the thickness of auxiliary electrode 202 is from about 0.5 ⁇ m to about 1 ⁇ m, such as 0.5 ⁇ m, 0.6 ⁇ m, 0.7 ⁇ m, 0.8 ⁇ m, 0.9 ⁇ m or 1 ⁇ m, etc.
  • the thickness of planarization layer 203 is from about 1 ⁇ m to about 3 ⁇ m, such as 1 ⁇ m, 2 ⁇ m or 3 ⁇ m, etc.
  • the thickness of the pixel definition layer 208 is from about 1 ⁇ m to about 3 ⁇ m, such as 1 ⁇ m, 2 ⁇ m or 3 ⁇ m, etc.
  • the thickness of the first electrode 204 is from about 200 ⁇ m to about 300 ⁇ m, for example, 200 ⁇ m, 250 ⁇ m, or 300 ⁇ m, etc.
  • the thickness of the second electrode 206 is from about 100 ⁇ m to about 200 ⁇ m, for example, 100 ⁇ m, 150 ⁇ m, or 200 ⁇ m, etc.
  • the second electrode 206 may have a segment difference (step), that is, the second electrode 206 is broken.
  • a conductive polymer layer 209 is arranged in the via hole structure 207 to raise the functional layer 205 so as to prevent the second electrode 206 from breaking, as illustrated in FIG. 2 and FIG. 4 , the conductive polymer layer 209 is formed between the auxiliary electrode 202 and the second electrode 206 .
  • the second electrode 206 is electrically connected with the auxiliary electrode 202 through the conductive polymer layer 209 to reduce the risk of forming a segment difference of the second electrode 206 .
  • the thickness of the conductive polymer layer 209 is larger than the thickness of the planarization layer 203 , and the thickness of the conductive polymer layer 209 is smaller than the sum of the thickness of the planarization layer 203 and the thickness of the pixel definition layer 208 .
  • the upper surface of the conductive polymer layer 209 is flush with the upper surface of the pixel definition layer 208 , in this way, the risk that the second electrode 206 having a segment difference is basically eliminated.
  • the thickness of the conductive polymer layer 209 is from about 2 ⁇ m to about 5.7 ⁇ m.
  • the thickness of the conductive polymer layer is 2 ⁇ m, 3 ⁇ m, 4 ⁇ m or 5 ⁇ m, etc.
  • the conductivity of the conductive polymer layer is greater than 10 ⁇ 6 S/m, which ensures that the auxiliary electrode 202 is electrically connected with the second electrode 206 .
  • a material of the conductive polymer layer 209 comprises at least one of polypyrrole, polyphenylene sulfide, polyphthalocyanine, polyaniline and polythiophene.
  • FIG. 5 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • the auxiliary electrode 202 in the via hole structure 207 is a structure in a U shape, it is equivalent to two side walls of the auxiliary electrode 202 being raised so that the second electrode 206 is directly electrically connected with the auxiliary electrode 202 at the via hole structure 207 , thus the step of forming the conductive polymer layer is reduced, and the risk of forming a segment difference of the second electrode 206 reduced.
  • the auxiliary electrode 202 is a structure in a U shape means that in the direction perpendicular to the surface of the base substrate 201 , the cross-section structure of the auxiliary electrode (for example, the longitudinal cross-section of the auxiliary electrode) is in a concave shape.
  • FIG. 6 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • the conductive polymer layer 209 is formed on the auxiliary electrode 202 in a U shape, which further reduces the risk of forming the segment difference of the second electrode 206 .
  • the auxiliary electrode 202 is a plate-type structure, and the via hole structure 207 is at least covered with the auxiliary electrode 202 ; or, on a plane parallel to the surface of the base substrate 201 and along the extension direction of the via hole structure 207 , there are a plurality of auxiliary electrodes 202 , and the plurality of auxiliary electrodes 202 are spaced apart from each other.
  • FIG. 7 is a schematic sectional view of an OLED array substrate provided by still another embodiment of the present disclosure.
  • the electroluminescent diode array substrate comprises a plurality of via hole structures 207 penetrating through the planarization layer 203 and the pixel definition layer 208 , and the second electrode 206 is electrically connected with the auxiliary electrodes 202 by the plurality of via hole structures 207 , so that the second electrode 206 is connected in parallel with the auxiliary electrodes 202 respectively.
  • FIG. 7 shows two via hole structures 207 .
  • the number of the via hole structures in the embodiments of the present disclosure is not limited to the above example, and more via hole structures 207 can be formed to further reduce the resistance of the second electrode and the auxiliary electrodes, in addition, the second electrode 206 connected in parallel with the auxiliary electrodes 202 through the plurality of via hole structures 207 increases the thickness of the second electrode 206 , which is equivalent to increasing of the cross-sectional area of the second electrode 206 , and the resistance of the second electrode 206 is further reduced.
  • the pixel definition layer 208 is made of an organic insulating material (for example, an acrylic resin) or an inorganic insulating material (for example, silicon nitride SiNx or silicon oxide SiOx), the pixel definition layer 208 has an insulating property.
  • the pixel definition layer 208 may be considered as the insulating structure disposed between the second electrode 206 and the auxiliary electrode 202 .
  • the first electrode 205 is made of a transparent conductive material, and the transparent conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), zinc gallium oxide (GZO)), Indium oxide (In 2 O 3 ), aluminum zinc oxide (AZO) and carbon nanotubes.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • IGO indium gallium oxide
  • GZO zinc gallium oxide
  • Indium oxide In 2 O 3
  • aluminum zinc oxide (AZO) and carbon nanotubes include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), zinc gallium oxide (GZO)), Indium oxide (In 2 O 3 ), aluminum zinc oxide (AZO) and carbon nanotubes.
  • the first electrode 205 is made of a metal conductive material
  • the metal conductive material includes a single metal such as Cu, Cr, Mo, Au, Ag and Pt metal, or an alloy material formed of the above metals, for example, a copper chromium alloy (CuCr) or a chromium molybdenum alloy (CrMo).
  • CuCr copper chromium alloy
  • CrMo chromium molybdenum alloy
  • the first electrode 205 is a stacked structure formed by any combination of the above-mentioned transparent conductive material and the metal conductive material.
  • the first electrode 205 is in a structure that the metal conductive material is sandwiched between two transparent conductive materials, such as ITO-Mo-IZO, ITO-Cr—In2O3, ITO-Cu—ZnO and ITO-Pt-IGO, or the first electrode 205 is a stacked double-layer structure made of the metal conductive material and the transparent conductive material, such as IZO—Mo, ITO-Cr, ZnO—Mg and ITO-Au.
  • the stacked structure formed of any combination of the transparent conductive material and the metal conductive material is not limited to the stacked double-layer structure and the stacked triple-layer structure. It may also be a stacked structure with multiple layers of other layers, for example, a stacked structure of four layers, a stacked structure of five layers, etc.
  • the first electrode because the work function of the metal material or the work function of the alloy material for forming the first electrode is relatively low, the first electrode has poor compatibility with the organic material functional layer in the OLED array substrate.
  • the transparent conductive material formed on a side of the first metal layer close to the functional layer formed of the organic material improves the work function of the first metal, so that the first electrode is better matched with the functional layer formed of the organic material.
  • the first electrode of the double-layer structure or the triple-layer structure has a lower resistance than the first electrode of the single-layer structure, and the resistance of the first electrode is lower, in this way, the resistance of the first electrode is reduced.
  • the material of the second electrode 206 includes magnesium, aluminum, lithium or other single metal, or magnesium aluminum alloy (MgAl), lithium aluminum alloy (LiAl), and the like.
  • this functional layer includes a light-emitting layer, an electron injection layer, an electron transmission layer, a hole injection layer and a hole transmission layer.
  • the method of manufacturing the functional layer in the organic light-emitting diode (OLED) array substrate includes a vacuum evaporation method and a solution method.
  • the vacuum evaporation method is suitable for small organic molecules without solvent, and the thicknesses of each layers of organic material functional layer is uniform.
  • the solution method includes a spin coating method, an inkjet printing method and a nozzle coating method, and the solution method is suitable for polymer materials and soluble small molecules, it has the advantage of low cost in production equipment, and has outstanding advantages in the production of large-scale and large-sized products, especially, the inkjet printing technology can accurately spray solution to the pixel region.
  • the quantum dots in the self-luminescent quantum dots light-emitting diodes cannot adopt the same evaporation method as the self-luminescent OLEDs, due to the phenomenon that the quantum dots are easy to be affected by heat and moisture, and therefore only the ink-jet printing can be used.
  • At least one embodiment of the present disclosure further provides a display panel, and the display panel includes any one of the electroluminescent diode array substrate described above.
  • FIG. 8 is a block diagram of a display panel provided by an embodiment of the present disclosure.
  • the display panel 1 includes an electroluminescent diode array substrate 2 disposed therein.
  • the display panel 1 can be applied to a display apparatus, for example, the display apparatus is a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital picture frame, a navigation system and any other product or component having a display function.
  • the embodiments of the display apparatus can be referred to the above embodiments of the electroluminescent diode array substrate, which is omitted herein.
  • At least one embodiment of the present disclosure further provides a method of manufacturing an electroluminescent diode array substrate, and the electroluminescent diode array substrate is an organic light-emitting diode (OLED) array substrate or a quantum dot light-emitting diode (QLED) array substrate.
  • OLED organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • FIG. 9 is a flow diagram of a manufacturing method of an OLED array substrate provided by an embodiment of the present disclosure.
  • the manufacturing method comprises the following steps:
  • S 102 forming an auxiliary electrode, a pixel definition layer, a first electrode, a functional layer and a second electrode on the base substrate, in which forming of the pixel definition layer includes forming a via hole structure in the pixel definition layer, the auxiliary electrode is on at least one side of the via hole structure, and the second electrode is electrically connected with the auxiliary electrode.
  • the upper surface of the auxiliary electrode on at least one side of the via hole structure is higher than the upper surface of the functional layer in the via hole structure, in this way, the auxiliary electrode is electrically connected to the second electrode through the portion of the auxiliary electrode that higher than the upper surface of the functional layer in the via hole structure.
  • a planarization layer is formed before forming the pixel definition layer, and the via hole structure extends from the pixel definition layer to penetrate through the planarization layer, and the pixel definition layer is used for isolating two sub-pixel units adjacent to each other.
  • the second electrode is electrically connected with the auxiliary electrodes by the plurality of via hole structures, so that the second electrode is connected in parallel with the auxiliary electrodes respectively.
  • the second electrode connected in parallel with the auxiliary electrodes through the plurality of via hole structures increases the thickness of the second electrode, which is equivalent to increasing of the cross-sectional area of the second electrode, and the resistance of the second electrode 206 is further reduced.
  • the pixel definition layer is made of an organic insulating material (for example, an acrylic resin) or an inorganic insulating material (for example, silicon nitride SiNx or silicon oxide SiOx), the pixel definition layer has an insulating property.
  • the pixel definition layer may be considered as the insulating structure disposed between the second electrode and the auxiliary electrode.
  • the manufacturing method provided by at least one embodiment of the present disclosure further includes forming a conductive polymer layer in the via hole structure, and the second electrode is electrically connected with the auxiliary electrode by the conductive polymer layer.
  • the second electrode may have a segment difference, that is, the second electrode is broken.
  • the conductive polymer layer is arranged in the via hole structure to raise the functional layer so as to prevent the second electrode from breaking.
  • the thickness of the conductive polymer layer is larger than the thickness of the planarization layer, and the thickness of the conductive polymer layer is smaller than the sum of the thickness of the planarization layer and the thickness of the pixel definition layer.
  • the upper surface of the conductive polymer layer is flush with an upper surface of the pixel definition layer, in this way, the risk that the second electrode having a segment difference is basically eliminated.
  • the thickness of the conductive polymer layer is from about 2 ⁇ m to about 5.7 ⁇ m.
  • the thickness of the conductive polymer layer is 2 ⁇ m, 3 ⁇ m, 4 ⁇ m or 5 ⁇ m, etc.
  • the conductivity of the conductive polymer layer is greater than 10 ⁇ 6 S/m, which ensures that the auxiliary electrode is electrically connected with the second electrode.
  • the material of the conductive polymer layer comprises at least one of polypyrrole, polyphenylene sulfide, polyphthalocyanine, polyaniline and polythiophene.
  • the conductive polymer layer is formed by an inkjet printing method.
  • the thickness of the functional layer is from about 100 nm to about 300 nm, for example, the thickness of the functional layer is 100 nm, 200 nm or 300 nm, etc.
  • the thickness of auxiliary electrode 202 is from about 0.5 ⁇ m to about 1 ⁇ m, such as 0.5 ⁇ m, 0.6 ⁇ m, 0.7 ⁇ m, 0.8 ⁇ m, 0.9 ⁇ m or 1 ⁇ m, etc.
  • the thickness of planarization layer 203 is from about 1 ⁇ m to about 3 ⁇ m, such as 1 ⁇ m, 2 ⁇ m or 3 ⁇ m, etc.
  • the thickness of the pixel definition layer 208 is from about 1 ⁇ m to about 3 ⁇ m, such as 1 ⁇ m, 2 ⁇ m or 3 ⁇ m, etc.
  • thickness of the first electrode 204 is from about 200 ⁇ m to about 300 ⁇ m, for example, 200 ⁇ m, 250 ⁇ m, or 300 ⁇ m, etc.
  • the thickness of the second electrode 206 is from about 100 ⁇ m to about 200 ⁇ m, for example, 100 ⁇ m, 150 ⁇ m, or 200 ⁇ m, etc.
  • the electroluminescent diode array substrate, the method of manufacturing the electroluminescent diode array substrate and the display panel provided by the embodiments of the present disclosure have at least one of the following beneficial effects:
  • the auxiliary electrode electrical connection between the second electrode and the auxiliary electrode is ensured, in this way, the auxiliary electrode electrically connected with the second electrode increases the equivalent thickness of the second electrode.
  • the resistance of the second electrode is reduced, and the problem that the large voltage drop caused by the large resistance of the second electrode in a case where the second electrode made of metallic silver with a thinner thickness is avoided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
US16/308,883 2017-06-30 2018-06-20 Electroluminescent diode array substrate, manufacturing method thereof and display panel Abandoned US20190288044A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/955,920 US20230033003A1 (en) 2017-06-30 2022-09-29 Electroluminescent diode array substrate, manufacturing method thereof and display panel

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201710558592.2 2017-06-30
CN201710558592.2A CN109216578B (zh) 2017-06-30 2017-06-30 电致发光二极管阵列基板及其制备方法、显示面板
PCT/CN2018/091952 WO2019001317A1 (zh) 2017-06-30 2018-06-20 电致发光二极管阵列基板及其制备方法、显示面板

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/091952 A-371-Of-International WO2019001317A1 (zh) 2017-06-30 2018-06-20 电致发光二极管阵列基板及其制备方法、显示面板

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/955,920 Continuation US20230033003A1 (en) 2017-06-30 2022-09-29 Electroluminescent diode array substrate, manufacturing method thereof and display panel

Publications (1)

Publication Number Publication Date
US20190288044A1 true US20190288044A1 (en) 2019-09-19

Family

ID=64741043

Family Applications (2)

Application Number Title Priority Date Filing Date
US16/308,883 Abandoned US20190288044A1 (en) 2017-06-30 2018-06-20 Electroluminescent diode array substrate, manufacturing method thereof and display panel
US17/955,920 Pending US20230033003A1 (en) 2017-06-30 2022-09-29 Electroluminescent diode array substrate, manufacturing method thereof and display panel

Family Applications After (1)

Application Number Title Priority Date Filing Date
US17/955,920 Pending US20230033003A1 (en) 2017-06-30 2022-09-29 Electroluminescent diode array substrate, manufacturing method thereof and display panel

Country Status (5)

Country Link
US (2) US20190288044A1 (de)
EP (1) EP3648189A4 (de)
JP (1) JP7201440B2 (de)
CN (1) CN109216578B (de)
WO (1) WO2019001317A1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217650B2 (en) 2018-05-08 2022-01-04 Joled Inc. Display unit
CN114284331A (zh) * 2021-12-24 2022-04-05 深圳市华星光电半导体显示技术有限公司 一种有机发光显示面板及其制作方法
US11362157B2 (en) * 2018-08-27 2022-06-14 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel, display device and manufacturing method of the display panel
US11374073B2 (en) * 2020-08-11 2022-06-28 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel with auxiliary electrode and manufacturing method thereof
US20220376204A1 (en) * 2019-10-10 2022-11-24 Applied Materials, Inc. Methods and apparatus for organic light emitting diode display structures
US11751412B2 (en) 2019-01-11 2023-09-05 Beijing Boe Technology Development Co., Ltd. Quantum dot light-emitting device and preparation method thereof

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817669B (zh) * 2019-01-23 2021-07-23 深圳市华星光电半导体显示技术有限公司 一种有机发光二极管显示器
CN110112201B (zh) * 2019-05-22 2021-01-19 合肥鑫晟光电科技有限公司 显示基板及其制造方法、显示装置
CN110299467A (zh) * 2019-06-26 2019-10-01 云谷（固安）科技有限公司 一种显示面板和显示装置
CN113224254A (zh) * 2020-06-28 2021-08-06 广东聚华印刷显示技术有限公司 显示面板及其制备方法、显示装置
CN112397563B (zh) * 2020-11-13 2024-03-12 京东方科技集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法
CN112968049A (zh) * 2021-02-22 2021-06-15 合肥鑫晟光电科技有限公司 一种有机发光显示面板、其制作方法及显示装置
CN113013362B (zh) * 2021-02-26 2023-04-18 云谷（固安）科技有限公司 显示面板、显示面板的制备方法及显示装置
CN113241367B (zh) * 2021-07-09 2021-09-21 北京京东方技术开发有限公司 显示基板及其制备方法
CN115275058B (zh) * 2022-07-29 2024-01-19 武汉华星光电半导体显示技术有限公司 显示面板及显示终端
WO2024197651A1 (zh) * 2023-03-29 2024-10-03 京东方科技集团股份有限公司 显示基板、显示装置和显示基板的制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100573132B1 (ko) * 2004-02-14 2006-04-24 삼성에스디아이 주식회사 유기 전계 발광 표시장치 및 그 제조 방법
JP2009176495A (ja) * 2008-01-23 2009-08-06 Seiko Epson Corp 有機ｅｌ装置、有機ｅｌ装置の製造方法、電子機器
CN103296052B (zh) * 2012-02-29 2015-11-04 群康科技(深圳)有限公司 显示面板及显示装置
CN103311265B (zh) * 2012-03-08 2016-05-18 群康科技(深圳)有限公司 有机发光二极管显示面板及其制造方法
KR102060364B1 (ko) * 2013-04-19 2019-12-31 삼성디스플레이 주식회사 유기발광 표시장치 제조방법
JP6211873B2 (ja) 2013-09-30 2017-10-11 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
KR20150061921A (ko) 2013-11-28 2015-06-05 엘지디스플레이 주식회사 유기전계발광표시장치
US9570471B2 (en) * 2014-08-05 2017-02-14 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
KR102313362B1 (ko) * 2014-12-02 2021-10-18 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN104466021B (zh) * 2014-12-17 2017-07-21 昆山国显光电有限公司 Amoled器件结构及其制造方法
KR102372091B1 (ko) * 2015-01-16 2022-03-11 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102394427B1 (ko) * 2015-04-02 2022-05-04 엘지디스플레이 주식회사 유기발광표시장치 및 이를 제조하는 방법
KR102483434B1 (ko) * 2015-05-28 2022-12-30 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN106328677B (zh) * 2015-06-30 2020-06-09 乐金显示有限公司 有机发光显示装置
KR102616580B1 (ko) * 2015-11-23 2023-12-22 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN107331691B (zh) * 2017-08-24 2020-07-03 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217650B2 (en) 2018-05-08 2022-01-04 Joled Inc. Display unit
US11678539B2 (en) 2018-05-08 2023-06-13 Joled Inc. Display unit
US11362157B2 (en) * 2018-08-27 2022-06-14 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel, display device and manufacturing method of the display panel
US11793035B2 (en) 2018-08-27 2023-10-17 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel, display device and manufacturing method of the display panel
US11751412B2 (en) 2019-01-11 2023-09-05 Beijing Boe Technology Development Co., Ltd. Quantum dot light-emitting device and preparation method thereof
US20220376204A1 (en) * 2019-10-10 2022-11-24 Applied Materials, Inc. Methods and apparatus for organic light emitting diode display structures
US11374073B2 (en) * 2020-08-11 2022-06-28 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel with auxiliary electrode and manufacturing method thereof
CN114284331A (zh) * 2021-12-24 2022-04-05 深圳市华星光电半导体显示技术有限公司 一种有机发光显示面板及其制作方法

Also Published As

Publication number Publication date
EP3648189A1 (de) 2020-05-06
JP7201440B2 (ja) 2023-01-10
CN109216578B (zh) 2020-12-22
US20230033003A1 (en) 2023-02-02
JP2020525967A (ja) 2020-08-27
WO2019001317A1 (zh) 2019-01-03
CN109216578A (zh) 2019-01-15
EP3648189A4 (de) 2021-03-24

Similar Documents

Publication Publication Date Title
US20230033003A1 (en) Electroluminescent diode array substrate, manufacturing method thereof and display panel
US11127801B2 (en) Organic light-emitting diode display substrate, method of manufacturing the same, and display apparatus
US10818740B2 (en) Organic light-emitting diode array substrate, manufacturing method thereof and display apparatus
CN112071882B (zh) 显示基板及其制备方法、显示装置
US11233114B2 (en) Organic light-emitting diode array substrate and manufacturing method thereof, display apparatus
US20180226460A1 (en) Array substrate, organic light emitting display panel and organic light emitting display device
JP4206388B2 (ja) 平板ディスプレイ装置
WO2018045658A1 (zh) Amoled显示装置
US11164918B2 (en) Organic light emitting diode display panel having connection portion connecting organic light emitting diode to peripheral circuit and manufacturing method thereof
US10396135B2 (en) OLED substrate and manufacturing method thereof, and display device
US10608056B2 (en) Display unit and method of producing the same, display panel
US11094766B2 (en) Array substrate, display panel, and display device
US8638326B2 (en) Organic light emitting diode display
US20190363144A9 (en) Array substrate including a resistance reducing component, method for fabricating the array substrate, and display device
CN103219469A (zh) 发光组件
US20170077205A1 (en) Organic light emitting diode display and manufacturing method thereof
EP3469640B1 (de) Anzeigesubstrat, anzeigevorrichtung und herstellungsverfahren dafür
US20190237695A1 (en) Oled display panel, display device and manufacturing method of oled display panel
US9337440B2 (en) Organic luminescent display device
CN110137379B (zh) 封装盖板、封装盖板的制备方法、显示面板
KR102121984B1 (ko) 유기전계발광표시장치 및 그 제조방법
KR102242982B1 (ko) 유기전계 발광표시장치 및 그 제조방법
WO2018176600A1 (zh) Oled面板的制作方法及oled面板
CN109638038B (zh) 一种主动阵列有机发光二极管显示模块
CN112349750B (zh) 显示器件及其制备方法、显示装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: BOE TECHNOLOGY GROUP CO., LTD., CHINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HOU, WENJUN;REEL/FRAME:047739/0090

Effective date: 20181105

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION