WO2018176600A1 - Oled面板的制作方法及oled面板 - Google Patents
Oled面板的制作方法及oled面板 Download PDFInfo
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- WO2018176600A1 WO2018176600A1 PCT/CN2017/084603 CN2017084603W WO2018176600A1 WO 2018176600 A1 WO2018176600 A1 WO 2018176600A1 CN 2017084603 W CN2017084603 W CN 2017084603W WO 2018176600 A1 WO2018176600 A1 WO 2018176600A1
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- pixel electrode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000926 separation method Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 238000000059 patterning Methods 0.000 claims abstract description 17
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 84
- 230000005525 hole transport Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Definitions
- the present invention relates to the field of OLED display technologies, and in particular, to a method for fabricating an OLED panel and an OLED panel.
- OLED Organic Light Emitting Diode
- the conventional OLED panel generally includes a TFT substrate 100, a plurality of pixel units 200 arranged in an array on the TFT substrate 100, and a padded between the respective pixel units 200.
- the plurality of pixel units 200 arranged in an array are separated by a pixel isolation layer 300.
- Each pixel unit 200 is provided with a whole pixel electrode 201.
- the pixel electrode 201 is deposited with an OLED light emitting device 202.
- the OLED light emitting device 202 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode which are sequentially stacked on the pixel electrode 201, and the pixel electrode 201 serves as the OLED light emitting device 202 at the same time. anode.
- the luminescence principle of the OLED illuminating device 202 is: under a certain voltage driving, electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively, and electrons and holes are respectively transported through the electron transport layer and the hole transport layer.
- excitons are formed and excited by the luminescent molecules, which are excited by radiation to emit visible light.
- An object of the present invention is to provide a method for fabricating an OLED panel, which can improve the resolution of the OLED panel without changing the printing precision, so that the pixel electrodes have stable and reliable insulation isolation.
- Another object of the present invention is to provide an OLED panel with high resolution and pixel power. Stable and reliable insulation between the poles.
- the present invention first provides a method for fabricating an OLED panel, comprising the following steps:
- Step S1 providing a TFT substrate
- Step S2 depositing a conductive film on the TFT substrate, and patterning the conductive film according to a plurality of pixel units arranged in an array to form a first pixel electrode disposed in each pixel unit, And a second pixel electrode that is separated from the first pixel electrode;
- Step S3 depositing an insulating film by atomic layer deposition film formation, and patterning the insulating film to form a pixel electrode separating insulating layer;
- the pixel electrode separation insulating layer includes a vertical portion and a lateral portion perpendicularly connecting the vertical portion, the vertical portion is filled between the first pixel electrode and the second pixel electrode, and the two ends of the lateral portion respectively cover the a portion of the pixel electrode relatively close to the second pixel electrode and a portion of the second pixel electrode relatively close to the first pixel electrode;
- Step S4 forming a pixel isolation layer that fills the plurality of pixel units in an array arrangement to be formed between the pixel units to be formed;
- Step S5 corresponding to the plurality of pixel units arranged in an array arranged to form a corresponding number of OLED light-emitting devices on the first pixel electrode, the second pixel electrode, and the pixel electrode separation insulating layer;
- the first pixel electrode, the second pixel electrode, and the pixel electrode are separated from the insulating layer, and form a pixel unit with the OLED light emitting device.
- the thickness of the TFT substrate is the thickness of the TFT substrate.
- the material of the conductive film is indium tin oxide.
- the insulating film is made of silicon oxide and has a thickness of
- the present invention also provides an OLED panel comprising a TFT substrate, a plurality of pixel units arranged in an array on the TFT substrate, and a plurality of pixel units arranged between the respective pixel units. a pixel isolation layer in which the pixel unit is separated;
- a first pixel electrode, a second pixel electrode, a pixel electrode isolation insulating layer that is insulated from the first pixel electrode and the second pixel electrode, and a first pixel electrode and a second pixel are disposed in each pixel unit.
- the pixel electrode separation insulating layer is formed by depositing an insulating film by atomic layer deposition, and is formed by patterning, comprising a vertical portion and a lateral portion perpendicularly connecting the vertical portion, the vertical portion being filled in the first pixel electrode and Between the second pixel electrodes, both ends of the lateral portion respectively cover a portion of the first pixel electrode relatively close to the second pixel electrode and a portion of the second pixel electrode relatively close to the first pixel electrode.
- the thickness of the TFT substrate is the thickness of the TFT substrate.
- the material of the first pixel electrode and the second pixel electrode is indium tin oxide.
- the material of the pixel electrode separating insulating layer is silicon oxide, and the thickness is
- the invention also provides a method for manufacturing an OLED panel, comprising the following steps:
- Step S1 providing a TFT substrate
- Step S2 depositing a conductive film on the TFT substrate, and patterning the conductive film according to a plurality of pixel units arranged in an array to form a first pixel electrode disposed in each pixel unit, And a second pixel electrode that is separated from the first pixel electrode;
- Step S3 depositing an insulating film by atomic layer deposition film formation, and patterning the insulating film to form a pixel electrode separating insulating layer;
- the pixel electrode separation insulating layer includes a vertical portion and a lateral portion perpendicularly connecting the vertical portion, the vertical portion is filled between the first pixel electrode and the second pixel electrode, and the two ends of the lateral portion respectively cover the a portion of the pixel electrode relatively close to the second pixel electrode and a portion of the second pixel electrode relatively close to the first pixel electrode;
- Step S4 forming a pixel isolation layer that fills the plurality of pixel units in an array arrangement to be formed between the pixel units to be formed;
- Step S5 corresponding to the plurality of pixel units arranged in an array arranged to form a corresponding number of OLED light-emitting devices on the first pixel electrode, the second pixel electrode, and the pixel electrode separation insulating layer;
- the first pixel electrode, the second pixel electrode, and the pixel electrode are separated from the insulating layer, and form a pixel unit with the OLED light emitting device;
- the thickness of the TFT substrate is
- the material of the conductive film is indium tin oxide.
- the present invention provides a method for fabricating an OLED panel, in which a first pixel electrode and a second pixel electrode that is separated from the first pixel electrode are fabricated in each pixel unit, and then an atomic layer is used. Depositing a film-forming method to deposit an insulating film and then patterning to form a pixel electrode separating insulating layer. The vertical portion of the pixel electrode separating insulating layer is filled between the first pixel electrode and the second pixel electrode, and the pixel electrode is separated from the horizontal portion of the insulating layer.
- the two ends respectively cover a portion of the first pixel electrode relatively close to the second pixel electrode and a portion of the second pixel electrode relatively close to the first pixel electrode, and then a pixel isolation layer is formed, and finally the OLED light emitting device is printed, and the printing can be performed without changing
- the resolution of the OLED panel is improved under the premise of precision, so that the first pixel electrode and the second pixel electrode in one pixel unit are sufficiently insulated, and the lateral leakage between the first pixel electrode and the second pixel electrode is reduced.
- An OLED panel is provided with a first pixel electrode, a second pixel electrode, and a first pixel electrode and a second pixel electrode in each pixel unit.
- the first pixel electrode is sufficiently insulated from the second pixel electrode to reduce lateral leakage between the first pixel electrode and the second pixel electrode.
- FIG. 1 is a front view of a conventional OLED panel
- Figure 2 is a schematic cross-sectional view corresponding to the A-A in Figure 1;
- FIG. 3 is a flow chart of a method of fabricating an OLED panel of the present invention.
- FIG. 4 is a front elevational view of an OLED panel of the present invention.
- Fig. 5 is a schematic cross-sectional view corresponding to the position B-B in Fig. 4.
- the present invention first provides a method for fabricating an OLED panel, including the following steps:
- step S1 the TFT substrate 1 is provided.
- the thickness of the TFT substrate 1 is Generally, the glass substrate, the gate electrode, the scan line, the gate insulating layer, the active layer, the interlayer insulating layer, the source, the drain, the data line and the like are the same as those in the prior art, and are not described herein.
- Step S2 depositing a conductive film on the TFT substrate 1, and patterning the conductive film according to the plurality of pixel units 2 arranged in an array to form a first film disposed in each pixel unit 2
- the material of the conductive film is Indium Tin Oxide (ITO).
- the prior art generally provides a whole pixel electrode in each pixel unit, and the above step S2 is to fabricate the first pixel electrode 21 in each pixel unit 2, and the first The second pixel electrode 22 that is blocked by the pixel electrode 21, that is, two in one pixel unit
- the block pixel electrode (which can be simply referred to as a 2in 1 structure) can improve the resolution of the finished OLED panel product.
- Step S3 depositing an insulating film by using an Atomic Layer Deposition (ALD) method, and patterning the insulating film to form a pixel electrode insulating layer 3.
- ALD Atomic Layer Deposition
- the pixel electrode separation insulating layer 3 includes a vertical portion 31 and a lateral portion 32 perpendicularly connecting the vertical portion 31, and the vertical portion 31 is filled between the first pixel electrode 21 and the second pixel electrode 22, the horizontal Both ends of the portion 32 cover a portion of the first pixel electrode 21 relatively close to the second pixel electrode 22 and a portion of the second pixel electrode 22 relatively close to the first pixel electrode 21.
- the pixel electrode separation insulating layer 3 Since the bevel angle of the ITO is very irregular after patterning by the etching process, if the pixel electrode separation insulating layer 3 is formed by a conventional chemical deposition method, the pixel electrode separation insulating layer 3 does not cover the first pixel electrode 21 well. The portion relatively close to the second pixel electrode 22 and the portion of the second pixel electrode 22 relatively close to the first pixel electrode 21 cause the first pixel electrode 21 and the second pixel electrode 22 in one pixel unit 2 to be insufficiently insulated.
- the substance is plated on the surface of the substrate layer by layer in the form of a monoatomic film, which can correspond to the first pixel electrode 21 and the second pixel electrode 22.
- a portion of the pixel electrode is separated from the insulating layer 3 by the step S3, so that the first pixel electrode 21 and the second pixel electrode 22 in one pixel unit 2 are sufficiently insulated from each other, and the first pixel electrode 21 is reduced. Lateral leakage with the second pixel electrode 22.
- the material of the insulating film is silicon oxide (SiOx), and the thickness is
- Step S4 forming a pixel isolation layer 4 that fills the plurality of pixel units 2 to be formed in an array arrangement between the pixel units 2 to be formed.
- the pixel isolation layer 4 further covers a portion of each pixel unit 2 in which the first pixel electrode 21 is apart from the pixel electrode separation insulating layer 3, and a portion of the second pixel electrode 22 away from the pixel electrode separation insulating layer 3, respectively. Sufficient insulation between the plurality of pixel units 2.
- Step S5 corresponding to the plurality of pixel units 2 in an array arrangement to be formed, printing a corresponding number of OLED light-emitting devices on the first pixel electrode 21, the second pixel electrode 22, and the pixel electrode separation insulating layer 3. 5.
- the first pixel electrode 21, the second pixel electrode 22, the pixel electrode separation insulating layer 3, and the OLED light emitting device 5 constitute a pixel unit 2.
- the OLED light emitting device 5 includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer which are sequentially stacked on the first pixel electrode 21, the second pixel electrode 22, and the pixel electrode separation insulating layer 3.
- the electron injecting layer and the cathode, the first pixel electrode 21 and the second pixel electrode 22 simultaneously serve as anodes of the OLED light emitting device 5.
- the foregoing steps form the first pixel electrode 21 and the second pixel electrode 22 in each of the pixel units 2, and the pixel electrode separation insulating layer 3 is formed to sufficiently insulate the first pixel electrode 21 from the second pixel electrode 22.
- the resolution of the OLED panel is improved, and the step S5 does not need to improve the resolution by improving the printing precision of the OLED light-emitting device 5, which is favorable for the printing process to proceed smoothly.
- the present invention also provides an OLED panel.
- the OLED panel of the present invention comprises a TFT substrate 1 , a plurality of pixel units 2 arranged in an array on the TFT substrate 1 , and a filling between the pixel units 2 .
- the plurality of pixel units 2 arranged in an array form a divided pixel isolation layer 4.
- Each of the pixel units 2 is provided with a first pixel electrode 21, a second pixel electrode 22, a pixel electrode separation insulating layer 3 for isolating the first pixel electrode 21 and the second pixel electrode 22, and deposited on the first
- the pixel electrode 21, the second pixel electrode 22, and the pixel electrode are separated from the OLED light-emitting device 5 on the insulating layer 3.
- the pixel electrode separation insulating layer 3 is formed by patterning an insulating film by ALD film formation, and includes a vertical portion 31 and a lateral portion 32 perpendicularly connecting the vertical portion 31.
- the vertical portion 31 is filled in the first portion.
- two ends of the lateral portion 32 respectively cover a portion of the first pixel electrode 21 relatively close to the second pixel electrode 22, and the second pixel electrode 22 is relatively close to the first pixel electrode 21 part.
- the pixel isolation layer 4 further covers a portion of each pixel unit 2 in which the first pixel electrode 21 is separated from the pixel electrode separation insulating layer 3, and a portion of the second pixel electrode 22 that is separated from the pixel electrode to separate the insulation 3, thereby ensuring more Sufficient insulation between pixel units 2.
- the thickness of the TFT substrate 1 is Generally, the glass substrate, the gate electrode, the scan line, the gate insulating layer, the active layer, the interlayer insulating layer, the source, the drain, the data line and the like are the same as those in the prior art, and are not described herein;
- the material of the first pixel electrode 21 and the second pixel electrode 22 is ITO;
- the material of the pixel electrode separating insulating layer 3 is SiOx, and the thickness is
- the OLED light emitting device 5 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are sequentially laminated on the first pixel electrode 21, the second pixel electrode 22, and the pixel electrode separation insulating layer 3.
- the layer and the cathode, the first pixel electrode 21 and the second pixel electrode 22 simultaneously serve as anodes of the OLED light-emitting device 5.
- the OLED panel of the present invention has the first pixel electrode 21 and the second pixel electrode 22 that is separated from the first pixel electrode 21 in each pixel unit 2, that is, the 2in 1 structure is adopted, the resolution of the OLED panel can be improved.
- the pixel electrode separation insulating layer 3 is formed by patterning an insulating film by ALD film formation, it may be combined with the first pixel electrode 21 and the second pixel. Corresponding portions of the electrode 22 are better matched, so that the pixel electrode separating the insulating layer 3 can sufficiently insulate the first pixel electrode 21 and the second pixel electrode 22 in one pixel unit 2, reducing the first pixel electrode 21 and the second pixel electrode 21 Lateral leakage between the pixel electrodes 22.
- a first pixel electrode and a second pixel electrode that is separated from the first pixel electrode are fabricated in each pixel unit, and then an atomic layer deposition film formation method is employed.
- a patterning process is performed to form a pixel electrode separating insulating layer, and a vertical portion of the pixel electrode separating insulating layer is filled between the first pixel electrode and the second pixel electrode, and the two ends of the horizontal portion of the pixel electrode separating the insulating layer are respectively Covering a portion of the first pixel electrode relatively close to the second pixel electrode and a portion of the second pixel electrode relatively close to the first pixel electrode, then fabricating a pixel isolation layer, and finally printing the OLED light emitting device, without changing the printing precision
- the resolution of the OLED panel is increased such that the first pixel electrode and the second pixel electrode in one pixel unit are sufficiently insulated to reduce lateral leakage between the first pixel electrode and
- a first pixel electrode, a second pixel electrode, a pixel electrode isolation insulating layer that is insulated from the first pixel electrode and the second pixel electrode, and deposited on the first pixel unit are disposed in each pixel unit a pixel electrode, a second pixel electrode, and an OLED light-emitting device on the insulating layer separated from the pixel electrode, the pixel electrode separating the insulating layer capable of sufficiently insulating the first pixel electrode and the second pixel electrode in one pixel unit, reducing the first The lateral leakage between the pixel electrode and the second pixel electrode.
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Abstract
一种OLED面板的制作方法及OLED面板。所述OLED面板的制作方法在每一像素单元（2）内制作出第一像素电极（21）、及第二像素电极（22），接着采用原子层沉积成膜方式沉积绝缘薄膜后做图案化处理，形成像素电极分隔绝缘层（3），像素电极分隔绝缘层（3）的纵部（31）填充在第一像素电极（21）与第二像素电极（22）之间，横部（32）的两端分别覆盖第一像素电极（21）相对靠近第二像素电极（22）的部分、及第二像素电极（22）相对靠近第一像素电极（21）的部分，然后制作像素隔离层（4），最后打印出OLED发光器件（5），能够在不改变打印精度的前提下提高OLED面板的解析度，使得第一像素电极（21）与第二像素电极（22）充分绝缘。
Description
本发明涉及OLED显示技术领域，尤其涉及一种OLED面板的制作方法及OLED面板。
有机发光二极管(Organic Light Emitting Diode，OLED)面板具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
请同时参阅图1与图2，现有的OLED面板通常包括TFT基板100、设在所述TFT基板100上呈阵列式排布的多个像素单元200、以及填充在各个像素单元200之间对所述呈阵列式排布的多个像素单元200进行分隔的像素隔离层300，其中每一像素单元200内设有一整块像素电极201，像素电极201上沉积有OLED发光器件202。具体地，OLED发光器件202包括依次层叠在像素电极201上的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、及阴极，像素电极201同时作为OLED发光器件202的阳极。OLED发光器件202的发光原理为：在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
在OLED面板制作过程中，由于打印技术可以大幅降低OLED材料的成本，越来越受到关注。但是因为目前的打印能力限制，采用打印工艺来制作高解析度(比如4K)OLED面板的困难很大，主要表现在现有的打印方法不能够在很小的像素单元200中完美打印出OLED发光器件202，会产生墨水溢流，造成混色等不良。
发明内容
本发明的目的在于提供一种OLED面板的制作方法，能够在不改变打印精度的前提下提高OLED面板的解析度，使得像素电极之间具有稳定可靠的绝缘隔离。
本发明的另一目的在于提供一种OLED面板，其解析度较高，像素电
极之间具有稳定可靠的绝缘隔离。
为实现上述目的，本发明首先提供一种OLED面板的制作方法，包括如下步骤：
步骤S1、提供TFT基板；
步骤S2、在所述TFT基板上沉积导电薄膜，并依据欲形成的呈阵列式排布的多个像素单元对导电薄膜进行图案化处理，获得设在每一像素单元内的第一像素电极、及与所述第一像素电极隔断的第二像素电极；
步骤S3、采用原子层沉积成膜方式沉积绝缘薄膜，并对绝缘薄膜进行图案化处理，形成像素电极分隔绝缘层；
所述像素电极分隔绝缘层包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分；
步骤S4、制作填充在各个欲形成的像素单元之间对所述欲形成的呈阵列式排布的多个像素单元进行分隔的像素隔离层；
步骤S5、对应于所述欲形成的呈阵列式排布的多个像素单元在第一像素电极、第二像素电极、与像素电极分隔绝缘层上打印出相应数量的OLED发光器件；
所述第一像素电极、第二像素电极、像素电极分隔绝缘层、与OLED发光器件构成一像素单元。
所述TFT基板的厚度为
所述导电薄膜的材料为氧化铟锡。
所述绝缘薄膜的材料为氧化硅，厚度为
本发明还提供一种OLED面板，包括TFT基板、设在所述TFT基板上呈阵列式排布的多个像素单元、以及填充在各个像素单元之间对所述呈阵列式排布的多个像素单元进行分隔的像素隔离层；
每一像素单元内设有第一像素电极、第二像素电极、对第一像素电极与第二像素电极进行隔断绝缘的像素电极分隔绝缘层、及沉积在所述第一像素电极、第二像素电极、与像素电极分隔绝缘层上的OLED发光器件；
所述像素电极分隔绝缘层经原子层沉积成膜方式沉积绝缘薄膜后做图案化处理得到，包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分。
所述TFT基板的厚度为
所述第一像素电极与第二像素电极的材料为氧化铟锡。
所述像素电极分隔绝缘层的材料为氧化硅，厚度为
本发明还提供一种OLED面板的制作方法，包括如下步骤：
步骤S1、提供TFT基板；
步骤S2、在所述TFT基板上沉积导电薄膜，并依据欲形成的呈阵列式排布的多个像素单元对导电薄膜进行图案化处理，获得设在每一像素单元内的第一像素电极、及与所述第一像素电极隔断的第二像素电极；
步骤S3、采用原子层沉积成膜方式沉积绝缘薄膜，并对绝缘薄膜进行图案化处理，形成像素电极分隔绝缘层；
所述像素电极分隔绝缘层包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分；
步骤S4、制作填充在各个欲形成的像素单元之间对所述欲形成的呈阵列式排布的多个像素单元进行分隔的像素隔离层；
步骤S5、对应于所述欲形成的呈阵列式排布的多个像素单元在第一像素电极、第二像素电极、与像素电极分隔绝缘层上打印出相应数量的OLED发光器件；
所述第一像素电极、第二像素电极、像素电极分隔绝缘层、与OLED发光器件构成一像素单元；
其中，所述TFT基板的厚度为
其中，所述导电薄膜的材料为氧化铟锡。
本发明的有益效果：本发明提供的一种OLED面板的制作方法，在每一像素单元内制作出第一像素电极、及与所述第一像素电极隔断的第二像素电极，接着采用原子层沉积成膜方式沉积绝缘薄膜后做图案化处理，形成像素电极分隔绝缘层，像素电极分隔绝缘层的纵部填充在第一像素电极与第二像素电极之间，像素电极分隔绝缘层的横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分，然后制作像素隔离层，最后打印出OLED发光器件，能够在不改变打印精度的前提下提高OLED面板的解析度，使得一个像素单元内的第一像素电极与第二像素电极充分绝缘，减少第一像素电极与第二像素电极之间的横向漏电。本发明提供的一种OLED面板，在每一像素单元内设有第一像素电极、第二像素电极、对第一像素电极与第二像素电极进行
隔断绝缘的像素电极分隔绝缘层、及沉积在所述第一像素电极、第二像素电极、与像素电极分隔绝缘层上的OLED发光器件，所述像素电极分隔绝缘层能够使得一个像素单元内的第一像素电极与第二像素电极充分绝缘，减少第一像素电极与第二像素电极之间的横向漏电。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的OLED面板的主视示意图；
图2为对应于图1中A-A处的剖面结构示意图；
图3为本发明的OLED面板的制作方法的流程图；
图4为本发明的OLED面板的主视示意图；
图5为对应于图4中B-B处的剖面结构示意图。
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，结合图4、与图5，本发明首先提供一种OLED面板的制作方法，包括如下步骤：
步骤S1、提供TFT基板1。
具体地，所述TFT基板1的厚度为
通常包括玻璃衬底、栅极、扫描线、栅极绝缘层、有源层、层间绝缘层、源极、漏极、数据线等，与现有技术无异，此处不做赘述。
步骤S2、在所述TFT基板1上沉积导电薄膜，并依据欲形成的呈阵列式排布的多个像素单元2对导电薄膜进行图案化处理，获得设在每一像素单元2内的第一像素电极21、及与所述第一像素电极21隔断的第二像素电极22。
具体地，该步骤2中，所述导电薄膜的材料为氧化铟锡(Indium Tin Oxide，ITO)。
值得注意的是，现有技术通常是在每一像素单元内设置一整块像素电极，而上述步骤S2则是在每一像素单元2内制作出第一像素电极21、及与所述第一像素电极21隔断的第二像素电极22，即在一个像素单元中设置两
块像素电极(可简称为2in 1结构)，能够提高最终制得的OLED面板成品的解析度。
步骤S3、采用原子层沉积成膜(Atomic Layer Deposition，ALD)方式沉积绝缘薄膜，并对绝缘薄膜进行图案化处理，形成像素电极分隔绝缘层3。
所述像素电极分隔绝缘层3包括纵部31、及垂直连接所述纵部31的横部32，所述纵部31填充在第一像素电极21与第二像素电极22之间，所述横部32的两端分别覆盖第一像素电极21相对靠近第二像素电极22的部分、及第二像素电极22相对靠近第一像素电极21的部分。
由于ITO经蚀刻工艺进行图案化处理后斜角很不规整，若采用常规的化学沉积方式来制作像素电极分隔绝缘层3，会造成像素电极分隔绝缘层3不能很好地覆盖第一像素电极21相对靠近第二像素电极22的部分、及第二像素电极22相对靠近第一像素电极21的部分，导致一个像素单元2内的第一像素电极21与第二像素电极22不能充分绝缘，二者之间存在横向漏电的问题；而本发明采用ALD成膜方式，是将物质以单原子膜形式一层一层地镀在基底表面，可以与第一像素电极21、第二像素电极22的相应部分较好的契合，从而经该步骤S3制得的所述像素电极分隔绝缘层3能够使得一个像素单元2内的第一像素电极21与第二像素电极22充分绝缘，减少第一像素电极21与第二像素电极22之间的横向漏电。
具体地，在该步骤3中，所述绝缘薄膜的材料为氧化硅(SiOx)，厚度为
步骤S4、制作填充在各个欲形成的像素单元2之间对所述欲形成的呈阵列式排布的多个像素单元2进行分隔的像素隔离层4。
进一步地，所述像素隔离层4还分别覆盖每一像素单元2中第一像素电极21远离像素电极分隔绝缘层3的部分、及第二像素电极22远离像素电极分隔绝缘层3的部分，保证多个像素单元2之间的充分绝缘。
步骤S5、对应于所述欲形成的呈阵列式排布的多个像素单元2在第一像素电极21、第二像素电极22、与像素电极分隔绝缘层3上打印出相应数量的OLED发光器件5。
所述第一像素电极21、第二像素电极22、像素电极分隔绝缘层3、与OLED发光器件5构成一像素单元2。
具体地，所述OLED发光器件5包括依次层叠在第一像素电极21、第二像素电极22、与像素电极分隔绝缘层3上的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、及阴极，第一像素电极21与第二像素电极22同时作为OLED发光器件5的阳极。
由于前述步骤在每一像素单元2内制作出了第一像素电极21、及第二像素电极22，且制作出像素电极分隔绝缘层3来使得第一像素电极21与第二像素电极22充分绝缘，提高了OLED面板的解析度，该步骤S5并不需要通过提高对OLED发光器件5的打印精度来提高解析度，有利于打印工艺顺利进行。
基于同一发明构思，本发明还提供一种OLED面板。请同时参阅图4、与图5，本发明的OLED面板包括TFT基板1、设在所述TFT基板1上呈阵列式排布的多个像素单元2、以及填充在各个像素单元2之间对所述呈阵列式排布的多个像素单元2进行分隔的像素隔离层4。
每一像素单元2内设有第一像素电极21、第二像素电极22、对第一像素电极21与第二像素电极22进行隔断绝缘的像素电极分隔绝缘层3、及沉积在所述第一像素电极21、第二像素电极22、与像素电极分隔绝缘层3上的OLED发光器件5。
所述像素电极分隔绝缘层3经ALD成膜方式沉积绝缘薄膜后做图案化处理得到，包括纵部31、及垂直连接所述纵部31的横部32，所述纵部31填充在第一像素电极21与第二像素电极22之间，所述横部32的两端分别覆盖第一像素电极21相对靠近第二像素电极22的部分、及第二像素电极22相对靠近第一像素电极21的部分。
进一步地，所述像素隔离层4还分别覆盖每一像素单元2中第一像素电极21远离像素电极分隔绝缘层3的部分、及第二像素电极22远离像素电极分隔绝缘3的部分，保证多个像素单元2之间的充分绝缘。
具体地，所述TFT基板1的厚度为
通常包括玻璃衬底、栅极、扫描线、栅极绝缘层、有源层、层间绝缘层、源极、漏极、数据线等，与现有技术无异，此处不做赘述；
所述第一像素电极21与第二像素电极22的材料为ITO；
所述像素电极分隔绝缘层3的材料为SiOx，厚度为
所述OLED发光器件5包括依次层叠在第一像素电极21、第二像素电极22、与像素电极分隔绝缘层3上的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、及阴极，第一像素电极21与第二像素电极22同时作为OLED发光器件5的阳极。
由于本发明的OLED面板在每一像素单元2内设置第一像素电极21、及与所述第一像素电极21隔断的第二像素电极22，即采用2in 1结构，能够提高OLED面板的解析度；由于像素电极分隔绝缘层3采用ALD成膜方式沉积绝缘薄膜后做图案化处理得到，可以与第一像素电极21、第二像素
电极22的相应部分较好的契合，从而所述像素电极分隔绝缘层3能够使得一个像素单元2内的第一像素电极21与第二像素电极22充分绝缘，减少第一像素电极21与第二像素电极22之间的横向漏电。
综上所述，本发明的OLED面板的制作方法，在每一像素单元内制作出第一像素电极、及与所述第一像素电极隔断的第二像素电极，接着采用原子层沉积成膜方式沉积绝缘薄膜后做图案化处理，形成像素电极分隔绝缘层，像素电极分隔绝缘层的纵部填充在第一像素电极与第二像素电极之间，像素电极分隔绝缘层的横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分，然后制作像素隔离层，最后打印出OLED发光器件，能够在不改变打印精度的前提下提高OLED面板的解析度，使得一个像素单元内的第一像素电极与第二像素电极充分绝缘，减少第一像素电极与第二像素电极之间的横向漏电。本发明的OLED面板，在每一像素单元内设有第一像素电极、第二像素电极、对第一像素电极与第二像素电极进行隔断绝缘的像素电极分隔绝缘层、及沉积在所述第一像素电极、第二像素电极、与像素电极分隔绝缘层上的OLED发光器件，所述像素电极分隔绝缘层能够使得一个像素单元内的第一像素电极与第二像素电极充分绝缘，减少第一像素电极与第二像素电极之间的横向漏电。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
- 一种OLED面板的制作方法，包括如下步骤：步骤S1、提供TFT基板；步骤S2、在所述TFT基板上沉积导电薄膜，并依据欲形成的呈阵列式排布的多个像素单元对导电薄膜进行图案化处理，获得设在每一像素单元内的第一像素电极、及与所述第一像素电极隔断的第二像素电极；步骤S3、采用原子层沉积成膜方式沉积绝缘薄膜，并对绝缘薄膜进行图案化处理，形成像素电极分隔绝缘层；所述像素电极分隔绝缘层包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分；步骤S4、制作填充在各个欲形成的像素单元之间对所述欲形成的呈阵列式排布的多个像素单元进行分隔的像素隔离层；步骤S5、对应于所述欲形成的呈阵列式排布的多个像素单元在第一像素电极、第二像素电极、与像素电极分隔绝缘层上打印出相应数量的OLED发光器件；所述第一像素电极、第二像素电极、像素电极分隔绝缘层、与OLED发光器件构成一像素单元。
- 如权利要求1所述的OLED面板的制作方法，其中，所述TFT基板的厚度为
- 如权利要求1所述的OLED面板的制作方法，其中，所述导电薄膜的材料为氧化铟锡。
- 如权利要求1所述的OLED面板的制作方法，其中，所述绝缘薄膜的材料为氧化硅，厚度为
- 一种OLED面板，包括TFT基板、设在所述TFT基板上呈阵列式排布的多个像素单元、以及填充在各个像素单元之间对所述呈阵列式排布的多个像素单元进行分隔的像素隔离层；每一像素单元内设有第一像素电极、第二像素电极、对第一像素电极与第二像素电极进行隔断绝缘的像素电极分隔绝缘层、及沉积在所述第一像素电极、第二像素电极、与像素电极分隔绝缘层上的OLED发光器件；所述像素电极分隔绝缘层经原子层沉积成膜方式沉积绝缘薄膜后做图 案化处理得到，包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分。
- 如权利要求5所述的OLED面板，其中，所述TFT基板的厚度为
- 如权利要求5所述的OLED面板，其中，所述第一像素电极与第二像素电极的材料为氧化铟锡。
- 如权利要求5所述的OLED面板，其中，所述像素电极分隔绝缘层的材料为氧化硅，厚度为
- 一种OLED面板的制作方法，包括如下步骤：步骤S1、提供TFT基板；步骤S2、在所述TFT基板上沉积导电薄膜，并依据欲形成的呈阵列式排布的多个像素单元对导电薄膜进行图案化处理，获得设在每一像素单元内的第一像素电极、及与所述第一像素电极隔断的第二像素电极；步骤S3、采用原子层沉积成膜方式沉积绝缘薄膜，并对绝缘薄膜进行图案化处理，形成像素电极分隔绝缘层；所述像素电极分隔绝缘层包括纵部、及垂直连接所述纵部的横部，所述纵部填充在第一像素电极与第二像素电极之间，所述横部的两端分别覆盖第一像素电极相对靠近第二像素电极的部分、及第二像素电极相对靠近第一像素电极的部分；步骤S4、制作填充在各个欲形成的像素单元之间对所述欲形成的呈阵列式排布的多个像素单元进行分隔的像素隔离层；步骤S5、对应于所述欲形成的呈阵列式排布的多个像素单元在第一像素电极、第二像素电极、与像素电极分隔绝缘层上打印出相应数量的OLED发光器件；所述第一像素电极、第二像素电极、像素电极分隔绝缘层、与OLED发光器件构成一像素单元；其中，所述TFT基板的厚度为
其中，所述导电薄膜的材料为氧化铟锡。 - 如权利要求9所述的OLED面板的制作方法，其中，所述绝缘薄膜的材料为氧化硅，厚度为
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| US9614191B2 (en) * | 2013-01-17 | 2017-04-04 | Kateeva, Inc. | High resolution organic light-emitting diode devices, displays, and related methods |
| JP6302741B2 (ja) * | 2013-12-19 | 2018-03-28 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN103700671B (zh) * | 2013-12-24 | 2017-01-11 | 华映视讯（吴江）有限公司 | 像素阵列基板及显示面板 |
| CN105543807B (zh) * | 2015-12-15 | 2018-06-26 | 华中科技大学 | 一种变温薄膜沉积系统 |
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- 2017-05-16 WO PCT/CN2017/084603 patent/WO2018176600A1/zh active Application Filing
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| CN1893106A (zh) * | 2005-06-29 | 2007-01-10 | 三星电子株式会社 | 显示器件以及制造方法 |
| JP5486920B2 (ja) * | 2009-12-25 | 2014-05-07 | 株式会社ジャパンディスプレイ | 有機ｅｌ装置及びその製造方法 |
| CN102226998A (zh) * | 2011-06-15 | 2011-10-26 | 友达光电股份有限公司 | 一种有机发光像素阵列 |
| CN105045012A (zh) * | 2015-09-10 | 2015-11-11 | 深圳市华星光电技术有限公司 | 像素结构、阵列基板及液晶显示面板 |
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