US20170120278A1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

Info

Publication number
US20170120278A1
US20170120278A1 US15/340,442 US201615340442A US2017120278A1 US 20170120278 A1 US20170120278 A1 US 20170120278A1 US 201615340442 A US201615340442 A US 201615340442A US 2017120278 A1 US2017120278 A1 US 2017120278A1
Authority
US
United States
Prior art keywords
liquid
removal liquid
exhaust
substrate
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/340,442
Other languages
English (en)
Inventor
Koji Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Assigned to SCREEN Holdings Co., Ltd. reassignment SCREEN Holdings Co., Ltd. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HASHIMOTO, KOJI
Publication of US20170120278A1 publication Critical patent/US20170120278A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B15/0258—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
    • B08B15/02—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area using chambers or hoods covering the area
    • C11D2111/22—

Definitions

  • the present invention relates to a substrate processing apparatus for processing a substrate.
  • substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (field emission displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.
  • Japanese Patent Application Publication No. 2010-226043 discloses a single substrate processing type substrate processing apparatus that processes substrates one by one.
  • the substrate processing apparatus includes a processing chamber in which a substrate is processed and a collection pipe which exhausts an atmosphere within the processing chamber to the outside of the processing chamber.
  • hydrofluoric acid processing which supplies hydrofluoric acid to the substrate
  • SC1 processing which supplies SC1 to the substrate
  • replacement processing which replaces pure water on the substrate with IPA (isopropyl alcohol) are performed.
  • IPA isopropyl alcohol
  • an atmosphere containing hydrofluoric acid, an atmosphere containing SC1 and an atmosphere containing IPA are sequentially passed through the collection pipe.
  • an atmosphere containing a chemical such as hydrogen fluoride hereinafter referred to as a “chemical atmosphere”
  • the chemical contained in the chemical atmosphere may be adhered to the inner circumferential surface of the collection pipe.
  • a preferred embodiment of the present invention provides a substrate processing apparatus including a chamber that defines an internal space in which a plurality of types of chemicals are supplied to a substrate at different timings, an individual exhaust flow path that includes an exhaust inlet into which an atmosphere within the chamber flows and that exhausts the atmosphere within the chamber through the exhaust inlet and an exhaust cleaning device that forms a dispersion region, where a removal liquid which removes a chemical contained in an atmosphere is dispersed, in at least one of a position on an upstream side of the exhaust inlet and a position within the individual exhaust flow path by discharging the removal liquid into air.
  • a plurality of types of chemicals are sequentially supplied to the substrate within the chamber.
  • the chemical atmosphere (the atmosphere containing the chemical) produced within the chamber is exhausted through the exhaust inlet from the chamber to the individual exhaust flow path.
  • the dispersion region where the removal liquid is dispersed is formed in at least one of the position on the upstream side of the exhaust inlet and the position within the individual exhaust flow path. Hence, the chemical atmosphere is brought into contact with the removal liquid either within the chamber or within the individual exhaust flow path.
  • the chemical may be a liquid (chemical liquid) or a gas (chemical gas).
  • the chemical gas may be the vapor of a chemical or may be a gas containing the mist of a chemical.
  • Specific examples of the chemical include an acidic chemical, an alkaline chemical and an organic chemical (chemical whose main component is an organic compound such as alcohol).
  • the removal liquid is preferably a water-containing liquid whose main component is water such as pure water.
  • the exhaust cleaning device may include a removal liquid nozzle which discharges the removal liquid.
  • the removal liquid nozzle may discharge the removal liquid upward or downward or may discharge the removal liquid horizontally.
  • a strip-shaped or conical dispersion region is formed.
  • the removal liquid nozzle may be a shower nozzle which linearly discharges the removal liquid from a plurality of circular discharge ports, maybe a spray nozzle which sprays the removal liquid so as to form the mist of the removal liquid or may be a slit nozzle which discharges the removal liquid from a slit-shaped discharge port so as to form a strip-shaped liquid film.
  • At least one of the following features may be added to the substrate processing apparatus.
  • the exhaust cleaning device forms the dispersion region at the same height as at least a portion of the exhaust inlet.
  • the dispersion region where the removal liquid is dispersed is formed at the same height as at least a portion of the exhaust inlet.
  • the distance from the exhaust inlet to the dispersion region is increased. This causes an increase in the length of the path through which the chemical atmosphere, in which the chemical component is not removed yet, passes.
  • the dispersion region is arranged at the same height as at least a portion of the exhaust inlet, and thus it is possible to decrease the region where a plurality of types of chemicals can make contact with each other. In this way, it is possible to reduce the number of particles produced within the individual exhaust flow path.
  • the exhaust cleaning device may include a removal liquid nozzle which discharges the removal liquid toward the same height (position in the vertical direction) as at least a portion of the exhaust inlet.
  • the exhaust cleaning device includes a plurality of removal liquid nozzles that respectively form a plurality of the dispersion regions in different positions in an exhaust direction that is a direction in which an atmosphere exhausted from the chamber flows.
  • the dispersion regions may be formed in a position on the upstream side of the exhaust inlet and in one or more positions within the individual exhaust flow path or may be formed in a plurality of positions within the individual exhaust flow path.
  • Each of the removal liquid nozzles includes a plurality of removal liquid discharge ports that discharge the removal liquid and that are aligned in an intersection direction intersecting the exhaust direction, and in two of the removal liquid nozzles adjacent to each other in the exhaust direction, the plurality of the removal liquid discharge ports provided in one of the two removal liquid nozzles are displaced in the intersection direction with respect to the plurality of the removal liquid discharge ports provided in the other removal liquid nozzle.
  • the removal liquid is discharged from a plurality of removal liquid discharge ports aligned in the intersection direction.
  • a strip-shaped curtain of the removal liquid is formed, and the removal liquid is dispersed in the strip-shaped dispersion region. Since the plurality of removal liquid discharge ports on the upstream side are displaced in the intersection direction with respect to the plurality of removal liquid discharge ports on the downstream side, even when the chemical atmosphere is passed through without hitting the curtain of the removal liquid on the upstream side, the chemical atmosphere is brought into contact with the curtain of the removal liquid on the downstream side. Hence, it is possible to reliably bring the chemical contained in the chemical atmosphere into contact with the removal liquid, with the result that it is possible to reduce the amount of chemical contained in the chemical atmosphere.
  • the intersection direction may be a direction perpendicular to the exhaust direction or may be a direction which is inclined with respect to the exhaust direction. In other words, the intersection direction is a direction other than a direction parallel to the exhaust direction.
  • the exhaust cleaning device further includes a plurality of removal liquid valves that correspond to the removal liquid nozzles, respectively and that individually switch between a supplying state in which the removal liquid is supplied to the removal liquid nozzle and a supply stop state in which the supply of the removal liquid to the removal liquid nozzle is stopped.
  • the discharge and the discharge stop of the removal liquid are switched by the opening and closing of a plurality of removal liquid valves for each removal liquid nozzle.
  • the number of the removal liquid nozzles that are discharging the removal liquid is equal to the number of the removal liquid valves that are open.
  • the removal liquid dispersed over the dispersion region applies resistance to the atmosphere exhausted from the chamber.
  • the flow rate (exhaust flow rate) of the atmosphere exhausted from the chamber is changed.
  • the exhaust flow rate when all the removal liquid nozzles discharge the removal liquid is lower than the exhaust flow rate when only portion of the removal liquid nozzles discharges the removal liquid.
  • the discharges of the removal liquid from the removal liquid nozzles are individually switched, and thus it is possible to adjust the exhaust flow rate.
  • the removal liquid valve includes a valve body which forms a flow path, a valve member which is arranged within the flow path and an actuator which moves the valve member.
  • the actuator may be a pneumatic actuator or an electric actuator or may be an actuator other than these.
  • the controller of the substrate processing apparatus controls the actuator to open and close the removal liquid valve.
  • the substrate processing apparatus further includes a substrate holding unit that holds the substrate horizontally within the chamber, a substrate rotating unit that rotates the substrate held by the substrate holding unit, a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding unit and a controller that controls the exhaust cleaning device, the substrate rotating unit and the processing liquid supply unit.
  • the exhaust cleaning device includes a removal liquid valve that switches between a supplying state in which the removal liquid is supplied to the removal liquid nozzle and a supply stop state in which the supply of the removal liquid to the removal liquid nozzle is stopped so as to change the number of the removal liquid nozzles that are discharging the removal liquid.
  • the controller is programmed and configured to perform a processing liquid supply step of supplying the processing liquid to the substrate within the chamber, a dry step of drying the substrate by removing the processing liquid supplied to the substrate in the processing liquid supply step due to the rotation of the substrate so as to dry the substrate, a first exhaust cleaning step of making one or more but less than all of a first number of the removal liquid nozzles discharge the removal liquid while performing the processing liquid supply step and a second exhaust cleaning step of making a second number of the removal liquid nozzles larger than the first number discharge the removal liquid while performing the dry step.
  • the dry step in which the processing liquid supplied to the substrate in the processing liquid supply step is removed from the substrate is performed.
  • the heat of the substrate is taken by the processing liquid when the processing liquid on the substrate is evaporated.
  • the temperature of the substrate is lowered when the dry step is performed.
  • a strong airflow is formed close to the substrate, with the result that the evaporation of the processing liquid is facilitated and that the substrate is cooled by the airflow.
  • a water mark may be formed by condensation on the substrate.
  • the removal liquid is discharged during a period in which the processing liquid is supplied to the substrate and during a period in which the substrate is dried.
  • the number (the second number) of removal liquid nozzles which discharge the removal liquid when the dry step is performed is larger than the number (the first number) of removal liquid nozzles which discharge the removal liquid when the processing liquid supply step is performed.
  • the number of removal liquid nozzles which discharge the removal liquid is increased, the number of dispersion regions is increased, with the result that the resistance applied to the atmosphere exhausted from the chamber is increased.
  • the intensity of the airflow close to the substrate can be reduced. In this way, it is possible to reduce a decrease in the temperature of the substrate during the dry step.
  • the removal liquid discharged from the exhaust cleaning device is stored in the butt provided on the bottom portion of the chamber.
  • the chemical contained in the chemical atmosphere floating within the chamber is removed at the bottom portion of the chamber.
  • the chemical in the chemical atmosphere can be removed before the chemical atmosphere enters the individual exhaust flow path.
  • the removal liquid discharged for forming the dispersion region is recycled in the butt, it is possible to reduce the amount of removal liquid consumed.
  • the exhaust cleaning device may include a removal liquid nozzle which discharges the removal liquid toward a position within the chamber.
  • the inner surface of the individual exhaust flow path may include an inclination portion which guides the removal liquid within the individual exhaust flow path into the chamber.
  • the substrate processing apparatus further includes a cleaning liquid nozzle that cleans an interior of the chamber by discharging cleaning liquid, which is the same type of liquid as the removal liquid discharged by the exhaust cleaning device, within the chamber, and the chamber includes a bottom portion defining a butt that is disposed in the internal space of the chamber and stores the cleaning liquid discharged from the cleaning liquid nozzle.
  • the interior of the chamber may be the inner surface of the chamber or an inner member arranged within the chamber.
  • the inner member may be a cylindrical guard which receives the processing liquid scattered from the substrate to the surrounding thereof, may be a shield plate which has a horizontal posture and which is arranged above the substrate or may be a nozzle arm including the tip end portion to which a processing liquid nozzle that discharges the processing liquid toward the substrate is attached.
  • the substrate processing apparatus includes a plurality of the chambers, a plurality of the exhaust cleaning devices that correspond to the chambers, respectively, a plurality of the individual exhaust flow paths that are connected to the chambers, respectively and a collection exhaust flow path that is connected to the individual exhaust flow paths.
  • the chemical atmospheres exhausted from a plurality of chambers to a plurality of individual exhaust flow paths are passed into the collection exhaust flow path.
  • the amounts of chemicals contained in the chemical atmospheres are reduced in advance by the exhaust cleaning devices.
  • a plurality of types of chemicals are suppressed or prevented from coming into contact with each other in the collection exhaust flow path.
  • the individual exhaust flow paths are collected in the collection exhaust flow path, it is not necessary to provide, for each of the individual exhaust flow paths, exhaust facilities, etc., for producing a suction force.
  • the exhaust outlets of the individual exhaust flow paths may be connected to the collection exhaust flow path in the same position or may be connected to the collection exhaust flow path in different positions in the exhaust direction.
  • the individual exhaust flow paths include respective exhaust outlets that discharge the atmospheres, exhausted from the chambers, into the collection exhaust flow path, the exhaust outlets are open at an inner surface of the collection exhaust flow path and are spaced in the vertical direction when seen horizontally and a canopy portion that is protruded from an upper edge of the exhaust outlet into the collection exhaust flow path is provided in at least one of the exhaust outlets.
  • a negative pressure exhaust pressure which sucks the atmosphere within the chamber into the individual exhaust flow path is adjusted by the valve member of an exhaust damper.
  • the exhaust cleaning device discharges the removal liquid toward the valve member so as to form, within the individual exhaust flow path, the dispersion region where the removal liquid is dispersed. A portion of the removal liquid is held on the surface of the valve member.
  • the chemical atmosphere within the individual exhaust flow path not only makes contact with the removal liquid which is dispersed in the air but also makes contact with the removal liquid held on the surface of the valve member. In this way, it is possible to further reduce the amount of chemical contained in the chemical atmosphere. Furthermore, since the removal liquid is held by the member (valve member) which is normally provided within the individual exhaust flow path, it is possible to reduce an increase in the number of components.
  • FIG. 2 is a schematic view for illustrating the exhaust system of the substrate processing apparatus.
  • FIG. 3 is a schematic view when a plurality of removal liquid nozzles included in an exhaust cleaning device are seen horizontally.
  • FIG. 1 is a horizontal schematic view of the interior of a processing unit 2 included in a substrate processing apparatus 1 according to a preferred embodiment of the present invention.
  • FIG. 1 shows vertical cross-sections of a chamber 4 , a cup 17 and a partition panel 23 .
  • the substrate processing apparatus 1 is a single substrate processing type apparatus in which a disk-shaped substrate W such as a semiconductor wafer is processed one by one.
  • the substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W using a processing fluid such as a processing liquid or a processing gas, a transfer robot (not shown) that transfers the substrate W to the plurality of processing units 2 , and a controller (control device) 3 that controls the substrate processing apparatus 1 .
  • the plurality of processing units 2 form four towers disposed at four positions, which are horizontally spaced, respectively.
  • Each tower includes a plurality of processing units 2 (for example, three processing units 2 ) stacked in the up/down direction (refer to FIG. 2 ).
  • the processing unit 2 includes a chamber 4 having an internal space, a spin chuck 7 that rotates the substrate W around a vertical rotation axis A 1 passing through the center portion of the substrate W while holding the substrate W horizontally inside the chamber 4 , and a plurality of nozzles that discharge processing liquids toward the substrate W.
  • the processing unit 2 further includes a disk-shaped shield plate 12 that is held in a horizontal orientation above the substrate W, a cup 17 that receives a processing liquid having scattered outward from the substrate W, and the partition panel 23 that divides a portion of the internal space of the chamber 4 around the cup 17 into two space aligned in the up/down direction.
  • the chamber 4 includes a box-shaped partition wall 5 that houses the spin chuck 7 , etc., an FFU 6 (fan filter unit) as a blower unit that feeds clean air (air filtered by a filter) inside the partition wall 5 through an upper portion of the partition wall 5 .
  • the partition wall 5 includes an upper wall disposed above the substrate W, a bottom wall disposed below the substrate W, and a side wall extending from an outer edge of the bottom wall to an outer edge of the upper wall.
  • the FFU 6 is disposed above the partition wall 5 .
  • there is a rectifying plate between the FFU 6 and the shield plate 12 which includes a plurality of penetrating holes provided in the entire area of the rectifying plate.
  • the spin chuck 7 includes a disk-shaped spin base 9 held in a horizontal orientation, a plurality of chuck pins 8 that holds the substrate W in a horizontal orientation above the spin base 9 , and a chuck opening/closing mechanism (not shown) that opens and closes the plurality of chuck pins 8 .
  • the spin chuck 7 further includes a spin shaft 10 extending downward from a central portion of the spin base 9 , and a spin motor 17 that rotates the spin shaft 10 to rotate the substrate W and the spin base 9 around the rotation axis A 1 .
  • the spin chuck 7 is not limited to a clamping type chuck in which the plurality of chuck pins 8 are brought into contact with the circumferential end surface of the substrate W, and may be a vacuum type chuck in which the rear surface (lower surface) of the substrate W, which is a non-device forming surface, is suctioned onto an upper surface of the spin base 9 to hold the substrate W horizontally.
  • the shield plate 12 has a disk-shaped configuration having an outer diameter larger than a diameter of the substrate W.
  • the shield plate 12 is supported in a horizontal orientation by a support shaft 13 extending in the up/down direction.
  • the support shaft 13 is supported by a support arm extending horizontally at a position higher than the shield plate 12 .
  • the shield plate 12 is disposed under the support shaft 13 .
  • the centerline of the shield plate 12 is disposed on the rotation axis A 1 .
  • the lower surface of the shield plate 12 is parallel to the upper surface of the substrate W and faces the upper surface of the substrate W.
  • the shield plate 12 is coupled to a shield plate rotating unit 15 which rotates the shield plate 12 around the vertical rotation axis A 1 with respect to a support arm 14 and a shield plate raising and lowering unit 16 which vertically raises and lowers the support arm 14 together with the shield plate 12 and a support shaft 13 .
  • the shield plate raising and lowering unit 16 vertically raises and lowers the shield plate 12 between a processing position and a retracted position (a position shown in FIG. 1 ).
  • the retracted position is an upper position in which the lower surface of the shield plate 12 is separated upward from the upper surface of the substrate W such that the nozzle can enter between the substrate W and the shield plate 12 .
  • the processing position is a lower position in which the lower surface of the shield plate 12 is close to the upper surface of the substrate W such that the nozzle is prevented from entering between the substrate W and the shield plate 12 .
  • the cup 17 surrounds the spin chuck 7 .
  • the cup 17 includes a plurality of guards 18 which receive the processing liquid scattered outward from the substrate W and a plurality of trays 21 which receive the processing liquid guided downward by the guards 18 .
  • the guards 18 are concentrically arranged so as to surround the spin chuck 7 .
  • the guard 18 includes a cylindrical inclination portion 19 which extends obliquely upwardly toward the vertical rotation axis A 1 and a cylindrical guide portion 20 which extends downward from the lower end portion (outer end portion) of the inclination portion 19 .
  • the upper end of the inclination portion 19 corresponding to the upper end of the guard 18 has an inside diameter greater than the outside diameters of the substrate W and the shield plate 12 .
  • a plurality of inclination portions 19 overlap each other in the up/down direction.
  • the trays 21 correspond to the guards 18 , respectively.
  • the tray 21 forms an annular groove located under the lower end of the guide portion 20 .
  • the guards 18 are connected to a guard raising and lowering unit 22 which individually raises and lowers the guards 18 .
  • the guard raising and lowering unit 22 vertically raises and lowers the guard 18 between a processing position and a retracted position.
  • the processing position is an upper position in which the upper end of the guard 18 is located higher than the substrate W.
  • the retracted position is a lower position in which the upper end of the guard 18 is located lower than the substrate W.
  • FIG. 1 shows a state that two guards 18 on the outside are arranged in the processing position and the remaining two guards 18 are arranged in the retracted position.
  • the guard raising and lowering unit 22 locates at least one of the guards 18 in the processing position, and makes the inner circumferential surface of the guard 18 oppose the circumferential end surface of the substrate W horizontally.
  • a plurality of nozzles include a plurality of chemical liquid nozzles which discharge a chemical liquid toward the upper surface of the substrate W and a rinse liquid nozzle 34 which discharges a rinse liquid toward the upper surface of the substrate W.
  • the chemical liquid nozzles include an acidic chemical liquid nozzle 24 which discharges an acidic chemical liquid toward the upper surface of the substrate W, an alkaline chemical liquid nozzle 29 which discharges an alkaline chemical liquid toward the upper surface of the substrate W and an organic chemical liquid nozzle 37 which discharges an organic chemical liquid toward the upper surface of the substrate W.
  • the acidic chemical liquid, the alkaline chemical liquid and the organic chemical liquid are soluble in water.
  • the first nozzle movement unit 28 moves the acidic chemical liquid nozzle 24 between a processing position in which the liquid discharged from the acidic chemical liquid nozzle 24 lands on the upper surface of the substrate W and a retracted position in which the acidic chemical liquid nozzle 24 is located around the spin chuck 7 in a plan view.
  • the alkaline chemical liquid nozzle 29 is connected to an alkaline chemical liquid pipe 30 which guides the alkaline chemical liquid supplied to the alkaline chemical liquid nozzle 29 .
  • An alkaline chemical liquid valve 31 which switches the supply and the supply stop of the alkaline chemical liquid to the alkaline chemical liquid nozzle 29 is interposed in the alkaline chemical liquid pipe 30 .
  • the alkaline chemical liquid valve 31 When the alkaline chemical liquid valve 31 is opened, the alkaline chemical liquid is continuously discharged downward from the alkaline chemical liquid nozzle 29 .
  • the alkaline chemical liquid is, for example, an SC-1 (a mixed liquid of ammonia water, hydrogen peroxide solution and water).
  • SC-1 a mixed liquid of ammonia water, hydrogen peroxide solution and water
  • the organic chemical liquid nozzle 37 is connected to an organic chemical liquid pipe 38 which guides the organic chemical liquid supplied to the organic chemical liquid nozzle 37 .
  • An organic chemical liquid valve 39 which switches the supply and the supply stop of the organic chemical liquid to the organic chemical liquid nozzle 37 is interposed in the organic chemical liquid pipe 38 .
  • the organic chemical liquid valve 39 When the organic chemical liquid valve 39 is opened, the organic chemical liquid is continuously discharged downward from the organic chemical liquid nozzle 37 , and is supplied to the upper surface of the substrate W via the center discharge port 40 of the shield plate 12 .
  • the organic chemical liquid is, for example, IPA.
  • the organic chemical liquid may be an alcohol other than IPA or may be an organic solvent other than alcohol.
  • the organic chemical liquid may be HFE (hydrofluoroether).
  • the center discharge port 40 of the shield plate 12 is connected to a gas pipe 42 which guides an inert gas to be supplied to the center discharge port 40 .
  • a gas valve 43 which switches the supply and the supply stop of the inert gas to the center discharge port 40 is interposed in the gas pipe 42 .
  • the gas valve 43 When the gas valve 43 is opened, the inert gas is supplied via the tubular flow path 41 to the center discharge port 40 , and is continuously discharged downward from the center discharge port 40 .
  • the center discharge port 40 discharges the inert gas in a state where the lower surface of the shield plate 12 is close to the upper surface of the substrate W, a space between the substrate W and the shield plate 12 is filled with the inert gas.
  • the inert gas is, for example, nitrogen gas.
  • the inert gas may be an inert gas such as argon gas other than nitrogen gas.
  • the controller 3 includes a memory which stores information such as a program and a processor which controls the substrate processing apparatus 1 according to the information stored in the memory.
  • a recipe that indicates processing procedures and processing steps for the substrate W is stored in the memory.
  • the controller 3 is programed so as to control the substrate processing apparatus 1 based on the recipe to make the processing units 2 perform the steps which will be described below and to make the processing units 2 process the substrate W.
  • the controller 3 moves the acidic chemical liquid nozzle 24 from the retracted position to the processing position, and opens the acidic chemical liquid valve 26 .
  • the SPM which is an example of the acidic chemical liquid is discharged from the acidic chemical liquid nozzle 24 toward the upper surface of the substrate W being rotated.
  • the controller 3 may move the acidic chemical liquid nozzle 24 so as to move the landing position where the SPM lands on the substrate W.
  • the SPM is supplied to the entire region of the upper surface of the substrate W. In this way, the upper surface of the substrate W is processed (SPM supply step).
  • the SPM scattered around the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position.
  • the controller 3 closes the acidic chemical liquid valve 26 , moves the acidic chemical liquid nozzle 24 from the processing position to the retracted position, then causes the rinse liquid nozzle 34 to discharge the pure water which is an example of the rinse liquid toward the rotating substrate W by opening the rinse liquid valve 36 .
  • the pure water discharged from the rinse liquid nozzle 34 lands on the center portion of the upper surface of the substrate W, and is thereafter passed outward along the upper surface of the substrate W. In this way, the pure water is supplied to the entire region of the upper surface of the substrate W so as to clean away the SPM adhered to the substrate W (rinse liquid supply step).
  • the pure water scattered around the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position.
  • the controller 3 closes the rinse liquid valve 36 to make the rinse liquid nozzle 34 stop the discharge of the pure water, then moves the alkaline chemical liquid nozzle 29 from the retracted position to the processing position and opens the alkaline chemical liquid valve 31 .
  • the SC-1 which is an example of the alkaline chemical liquid is discharged from the alkaline chemical liquid nozzle 29 toward the upper surface of the substrate W being rotated.
  • the controller 3 may move the alkaline chemical liquid nozzle 29 so as to move the position where the SC-1 lands on the substrate W.
  • the SC-1 is supplied to the entire region of the upper surface of the substrate W. In this way, the upper surface of the substrate W is processed with the SC-1 (SC-1 supply step).
  • the SC-1 scattered around the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position.
  • the controller 3 closes the alkaline chemical liquid valve 31 , moves the alkaline chemical liquid nozzle 29 from the processing position to the retracted position, then causes the rinse liquid nozzle 34 to discharge the pure water which is an example of the rinse liquid toward the rotating substrate W by opening the rinse liquid valve 36 .
  • the pure water discharged from the rinse liquid nozzle 34 lands on the center portion of the upper surface of the substrate W, and is thereafter passed outward along the upper surface of the substrate W. In this way, the pure water is supplied to the entire region of the upper surface of the substrate W so as to clean away the SC-1 adhered to the substrate W (rinse liquid supply step).
  • the pure water scattered around the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position.
  • the controller 3 closes the rinse liquid valve 36 , makes the rinse liquid nozzle 34 stop the discharge of the pure water, then lowers the shield plate 12 from the retracted position to the processing position and opens the organic chemical liquid valve 39 .
  • the IPA which is an example of the organic chemical liquid is discharged from the center discharge port 40 of the shield plate 12 toward the center portion of the upper surface of the substrate W being rotated.
  • the controller 3 may open the gas valve 43 and cause the center discharge port 40 of the shield plate 12 to discharge nitrogen gas.
  • the IPA is supplied to the entire region of the upper surface of the substrate W.
  • the pure water on the substrate W is replaced with the IPA, and a liquid film of the IPA which covers the entire region of the upper surface of the substrate W is formed (IPA supply step).
  • the IPA scattered around the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position.
  • the controller 3 closes the organic chemical liquid valve 39 so as to stop the discharge of the IPA through the shield plate 12 , and then makes the spin motor 11 accelerate the substrate W in the rotation direction in a state where the shield plate 12 is located in the processing position and where the center discharge port 40 of the shield plate 12 discharges the nitrogen gas downward.
  • the substrate W is rotated at a dry speed (for example, a few thousand rpm) higher than the liquid processing speed.
  • the IPA on the substrate W is exhausted around the substrate W by the high-speed rotation of the substrate W.
  • the IPA scattered outward from the substrate W is received by the inner circumferential surface of the guard 18 located in the processing position. In this way, the liquid is removed from the substrate W, and thus the substrate W is dried (dry step).
  • the controller 3 rotates the substrate W at a high speed for a predetermined period of time, and then makes the spin motor 11 stop the rotation of the substrate W. Thereafter, the controller 3 makes the chuck pins 8 release the grasp of the substrate W. Furthermore, the controller 3 closes the gas valve 43 so as to stop the discharge of the nitrogen gas through the shield plate 12 . Furthermore, the controller 3 raises the shield plate 12 from the processing position to the retracted position, and lowers the guards 18 from the processing position to the retracted position. Thereafter, the controller 3 makes the transfer robot (not shown) transport the substrate W out from the chamber 4 (transport-out step). The controller 3 repeats a series of steps from the transport-in step to the transport-out step so as to make the substrate processing apparatus 1 process a plurality of substrates W.
  • the processing unit 2 includes a plurality of cleaning liquid nozzles which discharge a cleaning liquid within the chamber 4 so as to clean the interior of the chamber 4 .
  • the cleaning liquid nozzles include an upper cleaning liquid nozzle 51 which discharges the cleaning liquid toward the upper surface of the shield plate 12 , a lower cleaning liquid nozzle 54 which discharges the cleaning liquid toward the lower surface of the shield plate 12 and an inner surface cleaning liquid nozzle 57 which discharges the cleaning liquid toward the inner surface of the chamber 4 .
  • the lower cleaning liquid nozzle 54 and the inner surface cleaning liquid nozzle 57 are fixed to the chamber 4 .
  • the upper cleaning liquid nozzle 51 may be fixed to the chamber 4 or may be fixed to the support shaft 13 supporting the shield plate 12 .
  • the cleaning liquid nozzles are located higher than the partition panel 23 .
  • the upper cleaning liquid nozzle 51 is connected to an upper cleaning liquid pipe 52 in which an upper cleaning liquid valve 53 is interposed.
  • the lower cleaning liquid nozzle 54 is connected to a lower cleaning liquid pipe 55 in which a lower cleaning liquid valve 56 is interposed, and the inner surface cleaning liquid nozzle 57 is connected to an inner surface cleaning liquid pipe 58 in which an inner surface cleaning liquid valve 59 is interposed.
  • the cleaning liquid is, for example, pure water.
  • the cleaning liquid is a water-containing liquid whose main component is water
  • the cleaning liquid may be a liquid other than pure water.
  • the cleaning liquid may be a rinse liquid other than pure water.
  • the controller 3 makes the upper cleaning liquid nozzle 51 and the lower cleaning liquid nozzle 54 discharge the cleaning liquid while rotating the shield plate 12 .
  • the cleaning liquid discharged from the upper cleaning liquid nozzle 51 lands on the upper surface of the shield plate 12 , and is thereafter passed outward along the upper surface of the shield plate 12 .
  • the cleaning liquid discharged from the lower cleaning liquid nozzle 54 lands on the lower surface of the shield plate 12 , and is thereafter passed outward along the lower surface of the shield plate 12 . In this way, the splashes, etc., of the processing liquid adhered to the shield plate 12 when the substrate W is processed are cleaned away by the cleaning liquid, and the upper surface and the lower surface of the shield plate 12 are cleaned by the cleaning liquid.
  • a drain port 61 through which the liquid within the butt 60 is exhausted is arranged in a position separated upward from the bottom surface of the butt 60 .
  • the exhaust inlet 71 a of an individual exhaust flow path 71 which will be described below is arranged in a position separated upward from the bottom surface of the butt 60 .
  • FIG. 2 is a schematic view for illustrating the exhaust system of the substrate processing apparatus 1 .
  • the chamber 4 is connected to an exhaust processing facility, which is provided in a factory where the substrate processing apparatus 1 is installed, via the individual exhaust flow path 71 , a collection exhaust flow path 72 and a gas-liquid separator 73 in this order.
  • the individual exhaust flow path 71 is defined by an individual exhaust duct 74
  • the collection exhaust flow path 72 is defined by a collection exhaust duct 75 .
  • the suction force of the exhaust processing facilities is transmitted via the individual exhaust flow path 71 , etc., to each chamber 4 .
  • the atmosphere exhausted from the chamber 4 is guided by the individual exhaust flow path 71 and the collection exhaust flow path 72 in an exhaust direction D 1 .
  • the atmosphere within the collection exhaust flow path 72 is passed into the exhaust processing facility after a liquid component is removed by the gas-liquid separator 73 .
  • Variations in the suction force transmitted to the chambers 4 are reduced by three exhaust dampers 76 which are respectively arranged in the three individual exhaust flowpaths 71 .
  • the exhaust damper 76 includes a valve member 77 located within the individual exhaust flow path 71 .
  • the exhaust damper 76 maybe a manual damper in which the valve member 77 is moved manually or may be an auto-damper which includes an actuator that moves the valve member 77 .
  • FIG. 2 shows an example where the valve member 77 has a disk-shaped configuration.
  • the individual exhaust flow path 71 includes the exhaust inlet 71 a through which the atmosphere within the chamber 4 is passed thereinto.
  • the exhaust inlet 71 a corresponds to the upstream end of the individual exhaust flow path 71 .
  • FIG. 2 shows an example where the inner surface of the chamber 4 defines the exhaust inlet 71 a.
  • the exhaust inlet 71 a may be defined by a member other than the chamber 4 .
  • the upstream end of the individual exhaust duct 74 may define the exhaust inlet 71 a.
  • the individual exhaust flow path 71 includes an exhaust outlet 71 b through which the atmosphere passed into the exhaust inlet 71 a is exhausted to the collection exhaust flow path 72 .
  • the exhaust outlet 71 b corresponds to the downstream end of the individual exhaust flow path 71 .
  • FIG. 2 shows an example where the three exhaust outlets 71 b are on the same vertical plane.
  • a canopy portion 78 which prevents the droplet from being passed into the exhaust outlet 71 b extends from the upper edge of the exhaust outlet 71 b into the collection exhaust flow path 72 .
  • Two canopy portions 78 are respectively connected to the two exhaust outlets 71 b on the lower side.
  • the canopy portion 78 includes an upper surface 78 a which extends obliquely downwardly from the exhaust outlet 71 b toward the downstream side of the collection exhaust flow path 72 and a tip end surface 78 b which extends vertically downwardly from the tip end (lower end) of the upper surface 78 a.
  • the amount of protrusion of the two canopy portions 78 that is, a distance D 3 from the exhaust outlet 71 b to the tip end of the canopy portion 78 in the horizontal direction is reduced as the collection exhaust flow path 72 extends to the downstream side thereof.
  • the canopy portion 78 on the lower side is hidden by the canopy portion 78 on the upper side.
  • the droplet (see a black spot in FIG. 2 ) exhausted downstream from the uppermost exhaust outlet 71 b is passed downward from the lower edge of the exhaust outlet 71 b along the inner surface of the collection exhaust flow path 72 , and reaches the canopy portion 78 on the upper side.
  • the droplet is guided by the upper surface 78 a of the canopy portion 78 on the upper side obliquely downwardly.
  • the droplet exhausted downstream from the middle exhaust outlet 71 b reaches the canopy portion 78 on the lower side, and is thereafter guided by the upper surface 78 a of the canopy portion 78 on the lower side obliquely downwardly.
  • the droplet guided by the upper surface 78 a of the canopy portion 78 is dropped downward from the tip end surface 78 b of the canopy portion 78 and enters the gas-liquid separator 73 .
  • the droplet dropped from the canopy portion 78 on the upper side is adhered to the canopy portion 78 on the lower side. Since in each chamber 4 , the processing is independently performed, different types of chemicals may be brought into contact with each other on the canopy portion 78 on the lower side. Hence, the canopy portion 78 on the lower side is hidden by the canopy portion 78 on the upper side, and thus it is possible to reduce or prevent the contact of the chemicals described above.
  • FIG. 3 is a schematic view when a plurality of removal liquid nozzles 82 included in an exhaust cleaning device 81 are seen horizontally.
  • FIG. 4 is a schematic view when the removal liquid nozzles 82 are seen from below.
  • FIG. 5 is a time chart showing an example where the chemical atmosphere is cleaned by a removal liquid.
  • cross-hatched regions represent removal liquid discharge ports 83 .
  • the mist and droplets of the chemical liquid are produced. Even when the chemical liquid is scattered from the substrate W or the scattered chemical liquid collides with the guard 18 , the mist and droplets of the chemical liquid are produced. Hence, a chemical atmosphere (atmosphere containing the chemical liquid) is produced within the chamber 4 . Furthermore, since a plurality of types of chemical liquids are sequentially supplied to the substrate W within the chamber 4 , a plurality of types of chemical atmospheres are sequentially produced within the chamber 4 .
  • the substrate processing apparatus 1 includes a plurality of exhaust cleaning devices 81 (scrubbers 81 ) which remove the chemical liquid contained in the chemical atmosphere.
  • the exhaust cleaning devices 81 correspond to a plurality of chambers 4 , respectively.
  • the exhaust cleaning device 81 includes a plurality of removal liquid nozzles 82 which discharge the removal liquid.
  • the removal liquid nozzles 82 are arranged within the chamber 4 .
  • the removal liquid nozzles 82 are arranged upstream of the exhaust inlet 71 a of the individual, exhaust flow path 71 .
  • the removal liquid nozzles 82 are aligned in the exhaust direction D 1 .
  • the removal liquid nozzles 82 are arranged lower than the substrate W.
  • the removal liquid nozzles 82 are located below the partition panel 23 .
  • FIG. 4 is a diagram when the removal liquid nozzles 82 are seen from below.
  • the removal liquid nozzle 82 is a shower nozzle which forms a plurality of linear liquid flows.
  • the removal liquid nozzle 82 is formed in the shape of a rod which extends in a horizontal intersection direction D 2 perpendicular to the exhaust direction Dl.
  • the removal liquid nozzle 82 includes a plurality of removal liquid discharge ports 83 which are spaced regularly in the horizontal intersection direction D 2 perpendicular to the exhaust direction D 1 .
  • Each of the removal liquid discharge ports 83 discharges, for example, the removal liquid vertically in a downward direction.
  • the removal liquid nozzles 82 are parallel to each other and are aligned in the exhaust direction D 1 .
  • the removal liquid nozzles 82 include three first removal liquid nozzles 82 A and two second removal liquid nozzles 82 B which are arranged between the three first removal liquid nozzles 82 A.
  • a plurality of removal liquid discharge ports 83 in the second removal liquid nozzles 82 B are displaced in the intersection direction D 2 with respect to a plurality of removal liquid discharge ports 83 in the first removal liquid nozzle 82 A.
  • At least a portion of the removal liquid discharge ports 83 in the second removal liquid nozzle 82 B is located between the removal liquid discharge ports 83 in the first removal liquid nozzle 82 A in the intersection direction D 2 .
  • the removal liquid discharge ports 83 in the first removal liquid nozzle 82 A and the removal liquid discharge ports 83 in the second removal liquid nozzle 82 B are arranged in a staggered configuration.
  • the removal liquid nozzle 82 is connected to a removal liquid pipe 84 in which a removal liquid valve 85 is interposed.
  • the removal liquid valve 85 and the removal liquid pipe 84 are provided in each of the removal liquid nozzles 82 .
  • the controller 3 opens the removal liquid valve 85 , the removal liquid is discharged from the removal liquid nozzle 82 corresponding to this removal liquid valve 85 .
  • the controller 3 increases or decreases the opening of the removal liquid valve 85 , the flow rate of removal liquid discharged from the removal liquid nozzle 82 corresponding to this removal liquid valve 85 is changed.
  • the discharges of the removal liquid from the removal liquid nozzles 82 are individually switched.
  • Each of the removal liquid pipes 84 is connected to the same removal liquid supply source.
  • the removal liquid is, for example, pure water.
  • the removal liquid is a water-containing liquid whose main component is water
  • the removal liquid maybe a liquid other than pure water.
  • the removal liquid may be a rinse liquid other than pure water.
  • the temperature of the removal liquid may be less than room temperature (20 to 30° C.) or may be equal to or more than room temperature.
  • FIG. 5 is a time chart showing an example where the chemical atmosphere is cleaned with the removal liquid.
  • the controller 3 makes only three (the first number) first removal liquid nozzles 82 A discharge the removal liquid. Then, when the IPA is removed from the substrate W so that the substrate W is dried, the controller 3 makes five (the second number) removal liquid nozzles 82 discharge the cleaning liquid.
  • the IPA has an extremely high affinity for water.
  • the chemical atmosphere containing the IPA is brought into contact with the removal liquid (pure water), and thus it is possible to effectively remove the IPA contained in the chemical atmosphere.
  • the removal liquid pure water
  • the amount of mist of the IPA produced is increased, with the result that the concentration of the IPA in the chemical atmosphere is increased.
  • the number of removal liquid nozzles 82 which discharge the removal liquid when the substrate W is dried is increased, and thus it is possible to reduce or prevent an increase in the amount of IPA contained in the chemical atmosphere after the cleaning.
  • a plurality of types of chemicals are sequentially supplied to the substrate W within the chamber 4 .
  • the chemical atmosphere (atmosphere containing the chemical) produced within the chamber 4 is exhausted through the exhaust inlet 71 a from the chamber 4 to the individual exhaust flow path 71 .
  • the dispersion region where the removal liquid is dispersed is formed in at least one of a position which is upstream of the exhaust inlet 71 a and a position which is within the individual exhaust flow path 71 .
  • the chemical atmosphere is brought into contact with the removal liquid either within the chamber 4 or within the individual exhaust flow path 71 .
  • the dispersion region where the removal liquid is dispersed is formed at the same height as at least a portion of the exhaust inlet 71 a.
  • the distance from the exhaust inlet 71 a to the dispersion region is increased. This causes an increase in the length of the path through which the chemical atmosphere, in which the chemical component is not removed yet, passes.
  • the dispersion region is arranged at the same height as at least a portion of the exhaust inlet 71 a, and thus it is possible to reduce the region where a plurality of types of chemicals can be brought into contact with each other. In this way, it is possible to reduce the number of particles produced within the individual exhaust flow path 71 .
  • a plurality of dispersion regions are aligned in a direction in which the atmosphere exhausted from the chamber 4 is passed, the chemical atmosphere is sequentially passed through the dispersion regions. In this way, since the number of times and the time the chemical atmosphere is brought into contact with the removal liquid are increased, the amount of chemical contained in the chemical atmosphere can be further reduced. In this way, it is possible to further reduce the number of particles produced within the individual exhaust flow path 71 .
  • the removal liquid is discharged from a plurality of removal liquid discharge ports 83 aligned in the intersection direction D 2 .
  • the strip-shaped curtain of the removal liquid is formed, and the removal liquid is dispersed over the strip-shaped dispersion region. Since a plurality of removal liquid discharge ports 83 on the upstream side are displaced with respect to a plurality of removal liquid discharge ports 83 on the downstream side in the intersection direction D 2 , even when the chemical atmosphere is passed without hitting the curtain of the removal liquid on the upstream side, the chemical atmosphere is brought into contact with the curtain of the removal liquid on the downstream side. Hence, it is possible to reliably bring the chemical contained in the chemical atmosphere into contact with the removal liquid, with the result that it is possible to reduce the amount of chemical contained in the chemical atmosphere.
  • the discharge and the discharge stop of the removal liquid are switched by the opening and closing of a plurality of removal liquid valves 85 for each removal liquid nozzle 82 .
  • the controller 3 changes the opening degree of the removal liquid valve 85 , and thus the flow rate of the removal liquid discharged from the removal liquid nozzle 82 is adjusted.
  • the number of the removal liquid nozzles 82 that are discharging the removal liquid is equal to the number of the removal liquid valves 85 that are open.
  • the removal liquid dispersed over the dispersion region applies resistance to the atmosphere exhausted from the chamber 4 .
  • the flow rate (exhaust flow rate) of the atmosphere exhausted from the chamber 4 is changed.
  • the exhaust flow rate when all the removal liquid nozzles 82 discharge the removal liquid is lower than the exhaust flow rate when only portion of the removal liquid nozzles 82 discharges the removal liquid.
  • the discharges of the removal liquid from the removal liquid nozzles 82 are individually switched, and thus it is possible to adjust the exhaust flow rate.
  • the dry step in which the IPA supplied to the substrate W in the IPA supply step is removed from the substrate W is performed.
  • the heat of the substrate W is taken by the IPA when the IPA on the substrate W is evaporated.
  • the temperature of the substrate W is lowered when the dry step is performed.
  • the flow rate of the atmosphere exhausted from the chamber 4 is high, a strong airflow is formed close to the substrate W, with the result that the evaporation of the IPA is facilitated and that the substrate W is cooled by the airflow.
  • a water mark may be formed by condensation on the substrate W.
  • the removal liquid is discharged during a period in which the IPA is supplied to the substrate W and during a period in which the substrate W is dried.
  • the number (the second number) of removal liquid nozzles 82 which discharge the removal liquid when the dry step is performed is larger than the number (the first number) of removal liquid nozzles 82 which discharge the removal liquid when the IPA supply step is performed.
  • the number of removal liquid nozzles 82 which discharge the removal liquid is increased, the number of dispersion regions is increased, with the result that the resistance applied to the atmosphere exhausted from the chamber 4 is increased.
  • the intensity of the airflow close to the substrate W can be reduced. In this way, it is possible to reduce a decrease in the temperature of the substrate W during the dry step.
  • the removal liquid discharged from the exhaust cleaning device 81 is stored in the butt 60 provided on the bottom portion of the chamber 4 .
  • the chemical contained in the chemical atmosphere floating within the chamber 4 is removed at the bottom portion of the chamber 4 .
  • the chemical in the chemical atmosphere can be removed before the chemical atmosphere enters the individual exhaust flow path 71 .
  • the removal liquid discharged for forming the dispersion region is recycled in the butt 60 , it is possible to reduce the amount of removal liquid consumed.
  • the cleaning liquid which is the same type of liquid as the removal liquid discharged by the exhaust cleaning device 81 is discharged within the chamber 4 .
  • the cleaning liquid which has cleaned the interior of the chamber 4 is stored in the butt 60 provided on the bottom portion of the chamber 4 .
  • the chemical contained in the chemical atmosphere floating within the chamber 4 is removed at the bottom portion of the chamber 4 .
  • the chemical in the chemical atmosphere can be removed before the chemical atmosphere enters the individual exhaust flow path 71 .
  • the removal liquid discharged to clean the interior of the chamber 4 is recycled in the butt 60 , it is possible to reduce the amount of removal liquid consumed.
  • the chemical atmospheres exhausted from a plurality of chambers 4 to a plurality of individual exhaust flow paths 71 are passed into the collection exhaust flow path 72 .
  • the amounts of chemicals contained are reduced in advance by the exhaust cleaning devices 81 .
  • a plurality of types of chemicals are suppressed or prevented from coming into contact with each other in the collection exhaust flow path 72 .
  • the individual exhaust flow paths 71 are collected in the collection exhaust flow path 72 , it is not necessary to provide, for each of the individual exhaust flow paths 71 , exhaust facilities, etc., for producing a suction force.
  • the droplet when a droplet of the chemical is produced in the exhaust outlet 71 b of the individual exhaust flow path 71 , the droplet is exhausted from the exhaust outlet 71 b into the collection exhaust flow path 72 , and is passed downward along the inner surface of the collection exhaust flow path 72 . Since when a plurality of exhaust outlets 71 b are seen horizontally, the exhaust outlets 71 b are spaced in the vertical direction, the droplet passed downward along the inner surface of the collection exhaust flow path 72 may enter the exhaust outlet 71 b on the lower side.
  • the canopy portion 78 which is protruded from the upper edge of the exhaust outlet 71 b into the collection exhaust flow path 72 is provided, it is possible to reduce or prevent the entry of the droplet of the chemical exhausted from the exhaust outlet 71 b on the upper side into the exhaust outlet 71 b on the lower side.
  • all or part of the canopy portion 78 on the downstream side is hidden by the canopy portion 78 on the upstream side.
  • the droplet of the chemical on the canopy portion 78 is dropped downward from the edge of the canopy portion 78 .
  • the droplet dropped from the canopy portion 78 on the upstream side is adhered to the canopy portion 78 on the downstream side.
  • different types of chemicals may be brought into contact with each other on the canopy portion 78 on the downstream side.
  • the canopy portion 78 on the downstream side is hidden by the canopy portion 78 on the upstream side, and thus it is possible to reduce or prevent the contact of the chemicals described above.
  • the present invention is not limited to the contents of the above preferred embodiments, and can be variously modified.
  • a hydrogen peroxide solution may be supplied before the supply of the pure water.
  • the shield plate 12 may be omitted.
  • the exhaust cleaning device 81 may include a flow path interior removal liquid nozzle 92 which discharges the removal liquid within the individual exhaust flow path 71 instead of, or in addition to the chamber interior removal liquid nozzle 82 which discharges the removal liquid within the chamber 4 .
  • FIG. 6 shows an example where the removal liquid nozzle 92 is a spray nozzle which produces the mist of the removal liquid.
  • the removal liquid nozzle 92 is connected to the removal liquid pipe 84 in which the removal liquid valve 85 is interposed.
  • the removal liquid nozzle 92 discharges the removal liquid, the mist of the removal liquid is spread in the shape of a cone, and a cone-shaped dispersion region is formed within the individual exhaust flow path 71 .
  • the removal liquid nozzle 92 discharges, for example, the removal liquid downward toward the valve member 77 of the exhaust damper 76 arranged within the individual exhaust flow path 71 .
  • the removal liquid nozzle 92 may discharge the removal liquid toward a position on the upstream side or on the downstream side of the valve member 77 within the individual exhaust flow path 71 .
  • the flow path interior removal liquid nozzle 92 discharges the removal liquid toward the valve member 77 so as to form, within the individual exhaust flow path 71 , the dispersion region where the removal liquid is dispersed. A portion of the removal liquid is held on the surface of the valve member 77 .
  • the chemical atmosphere within the individual exhaust flow path 71 not only makes contact with the removal liquid which is dispersed in the air but also makes contact with the removal liquid held on the surface of the valve member 77 . In this way, it is possible to further reduce the amount of chemical contained in the chemical atmosphere. Furthermore, since the removal liquid is held by the member (valve member 77 ) which is normally provided within the individual exhaust flow path 71 , it is possible to reduce an increase in the number of components.
  • the removal liquid may be discharged during a period other than those periods.
  • the removal liquid may be discharged during a period (chemical supply step) in which at least one of the SPM and the SC-1 is supplied to the substrate W.
  • the removal liquid may be discharged during all the periods in which the substrate W is within the chamber 4 , the removal liquid may be discharged, or regardless of whether the substrate W is within the chamber 4 , the removal liquid may be discharged.
  • the first number may be larger than the second number or may be equal to the second number.
  • the number of removal liquid nozzles 82 which discharge the removal liquid may be adjusted.
  • the removal liquid nozzle 82 may discharge the removal liquid not only in the downward direction but also in the upward direction or may discharge the removal liquid in the horizontal direction.
  • the dispersion region may be formed in the position on the downstream side of the exhaust dampers 76 .
  • the dispersion region corresponding to the processing unit 2 on the uppermost side shown in FIG. 2 may be formed in a range from the exhaust damper 76 corresponding to the processing unit 2 to the canopy portion 78 on the upper side corresponding to the processing unit 2 .
  • the dispersion region does not need to be located at the same height as at least a portion of the exhaust inlet 71 a.
  • the entire dispersion region may be formed in a position higher or lower than the exhaust inlet 71 a.
  • one removal liquid valve 85 may switch the discharge and the discharge stop and the flow rate of the removal liquid from all the removal liquid nozzles 82 .
  • the canopy portion 78 on the downstream side may be protruded from the canopy portion 78 on the upstream side. All or part of the canopy portion 78 may be omitted.
US15/340,442 2015-11-02 2016-11-01 Substrate processing apparatus Abandoned US20170120278A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-215961 2015-11-02
JP2015215961A JP6618113B2 (ja) 2015-11-02 2015-11-02 基板処理装置

Publications (1)

Publication Number Publication Date
US20170120278A1 true US20170120278A1 (en) 2017-05-04

Family

ID=58638539

Family Applications (1)

Application Number Title Priority Date Filing Date
US15/340,442 Abandoned US20170120278A1 (en) 2015-11-02 2016-11-01 Substrate processing apparatus

Country Status (4)

Country Link
US (1) US20170120278A1 (ko)
JP (1) JP6618113B2 (ko)
KR (2) KR20170051364A (ko)
TW (1) TWI641035B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110202464A (zh) * 2019-05-27 2019-09-06 苏州阿特斯阳光电力科技有限公司 一种金刚线切片厂区废水的回收利用方法及其应用
CN112547635A (zh) * 2020-11-19 2021-03-26 湖南力方轧辊有限公司 一种支撑辊加工用堆焊装置
CN114160540A (zh) * 2021-11-19 2022-03-11 北京北方华创微电子装备有限公司 清洗腔室

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6925219B2 (ja) * 2017-09-29 2021-08-25 東京エレクトロン株式会社 基板処理装置
KR102121240B1 (ko) 2018-05-03 2020-06-18 세메스 주식회사 기판 처리 장치 및 방법
JP7094147B2 (ja) * 2018-05-30 2022-07-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7313244B2 (ja) * 2019-09-20 2023-07-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315832B1 (en) * 1999-09-09 2001-11-13 Liu Yu-Tsai Single chamber processing apparatus having multi-chamber functions
US6793769B2 (en) * 2001-10-30 2004-09-21 Dainippon Screen Mfg. Co. Ltd. Substrate processing apparatus
US20090211526A1 (en) * 2003-05-13 2009-08-27 Tokyo Electron Limited Processing apparatus using source gas and reactive gas
US8313609B2 (en) * 2005-03-31 2012-11-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US8864937B2 (en) * 2008-08-06 2014-10-21 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus
US8881996B2 (en) * 2009-09-21 2014-11-11 Semes Co., Ltd. Swing nozzle unit and substrate processing apparatus with swing nozzle unit
US20160020085A1 (en) * 2013-03-06 2016-01-21 SCREEN Holdings Co., Ltd. Substrate processing device
US9896761B2 (en) * 2012-03-19 2018-02-20 Tokyo Electron Limited Trap assembly in film forming apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679121A (ja) * 1992-09-07 1994-03-22 Fujitsu Ltd 排気除害システム
JP3354268B2 (ja) * 1994-02-18 2002-12-09 富士通株式会社 排ガス浄化方法
KR20000073513A (ko) * 1999-05-11 2000-12-05 윤종용 가스 배기 시스템
KR20100048418A (ko) * 2008-10-31 2010-05-11 세메스 주식회사 기판 처리 장치
KR20100059358A (ko) * 2008-11-26 2010-06-04 세메스 주식회사 배기 유닛, 그리고 이를 이용한 기판 처리 장치 및 방법
JP2010226043A (ja) * 2009-03-25 2010-10-07 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6300139B2 (ja) * 2012-05-15 2018-03-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理システム
JP2015046522A (ja) * 2013-08-29 2015-03-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315832B1 (en) * 1999-09-09 2001-11-13 Liu Yu-Tsai Single chamber processing apparatus having multi-chamber functions
US6793769B2 (en) * 2001-10-30 2004-09-21 Dainippon Screen Mfg. Co. Ltd. Substrate processing apparatus
US20090211526A1 (en) * 2003-05-13 2009-08-27 Tokyo Electron Limited Processing apparatus using source gas and reactive gas
US8313609B2 (en) * 2005-03-31 2012-11-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US8864937B2 (en) * 2008-08-06 2014-10-21 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus
US8881996B2 (en) * 2009-09-21 2014-11-11 Semes Co., Ltd. Swing nozzle unit and substrate processing apparatus with swing nozzle unit
US9896761B2 (en) * 2012-03-19 2018-02-20 Tokyo Electron Limited Trap assembly in film forming apparatus
US20160020085A1 (en) * 2013-03-06 2016-01-21 SCREEN Holdings Co., Ltd. Substrate processing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110202464A (zh) * 2019-05-27 2019-09-06 苏州阿特斯阳光电力科技有限公司 一种金刚线切片厂区废水的回收利用方法及其应用
CN112547635A (zh) * 2020-11-19 2021-03-26 湖南力方轧辊有限公司 一种支撑辊加工用堆焊装置
CN114160540A (zh) * 2021-11-19 2022-03-11 北京北方华创微电子装备有限公司 清洗腔室

Also Published As

Publication number Publication date
JP2017092079A (ja) 2017-05-25
KR20180132021A (ko) 2018-12-11
KR102041058B1 (ko) 2019-11-05
KR20170051364A (ko) 2017-05-11
TW201724233A (zh) 2017-07-01
JP6618113B2 (ja) 2019-12-11
TWI641035B (zh) 2018-11-11

Similar Documents

Publication Publication Date Title
US20170120278A1 (en) Substrate processing apparatus
US9318365B2 (en) Substrate processing apparatus
US10639683B2 (en) Recovery piping cleaning method and substrate processing apparatus
US10622225B2 (en) Substrate processing apparatus and nozzle cleaning method
US20170084470A1 (en) Substrate processing apparatus and cleaning method of processing chamber
US9064908B2 (en) Substrate liquid processing apparatus, liquid processing method, and storage medium
KR101887696B1 (ko) 액처리 장치 및 액처리 방법
KR20180034438A (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
KR20170034331A (ko) 기판 처리 장치 및 처리 챔버 세정 방법
KR20180040127A (ko) 기판 처리 방법 및 기판 처리 장치
JP2012256743A (ja) 液処理装置および液処理方法
CN107851572B (zh) 基板处理装置、基板处理方法以及存储介质
JP2014110404A (ja) 基板処理装置および基板処理方法
KR20180109718A (ko) 기판 처리 방법 및 기판 처리 장치
JP2017069261A (ja) 基板処理装置
JP6489524B2 (ja) 基板処理装置
JP2018157129A (ja) 基板処理装置および基板処理方法
WO2017204088A1 (ja) 基板処理装置および基板処理方法
JP2016012629A (ja) 基板処理方法および基板処理装置
JP6016096B2 (ja) 基板処理装置
TWI776063B (zh) 基板處理方法及基板處理裝置
JP5967948B2 (ja) 基板処理装置および基板処理方法
JP2013211367A (ja) 処理液供給装置およびその処理液供給装置を備えた基板処理装置および基板処理方法
JP7002605B2 (ja) 基板処理装置および基板処理方法
JP2018163898A (ja) 基板処理装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: SCREEN HOLDINGS CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HASHIMOTO, KOJI;REEL/FRAME:040188/0512

Effective date: 20161024

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: ADVISORY ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION