US20150236748A1 - Devices and Methods for Duplexer Loss Reduction - Google Patents
Devices and Methods for Duplexer Loss Reduction Download PDFInfo
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- US20150236748A1 US20150236748A1 US14/181,489 US201414181489A US2015236748A1 US 20150236748 A1 US20150236748 A1 US 20150236748A1 US 201414181489 A US201414181489 A US 201414181489A US 2015236748 A1 US2015236748 A1 US 2015236748A1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B15/00—Suppression or limitation of noise or interference
- H04B15/005—Reducing noise, e.g. humm, from the supply
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B17/00—Monitoring; Testing
- H04B17/10—Monitoring; Testing of transmitters
- H04B17/11—Monitoring; Testing of transmitters for calibration
- H04B17/12—Monitoring; Testing of transmitters for calibration of transmit antennas, e.g. of the amplitude or phase
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/015—Reducing echo effects
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/456—A scaled replica of a transistor being present in an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/471—Indexing scheme relating to amplifiers the voltage being sensed
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
Definitions
- the present application is related to U.S. patent application Ser. No. ______ entitled “Methods for Increasing RF Throughput Via Usage of Tunable Filters” (Attorney Docket No. PER-099-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
- the present application is also related to U.S. patent application Ser. No. ______ entitled “Integrated Tunable Filter Architecture” (Attorney Docket No. PER-115-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
- the present application may be related to U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar. 3, 2013, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to International Application No. PCT/US2009/001358, entitled “Method and Apparatus for use in digitally tuning a capacitor in an integrated circuit device”, filed on Mar. 2, 2009, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to U.S. patent application Ser. No. 13/595,893, entitled “Method and Apparatus for Use in Tuning Reactance in a Circuit Device”, filed on Aug.
- the present application may also be related to U.S. patent application Ser. No. 14/042,312, filed on Sep. 30, 2013, entitled “Methods and Devices for Impedance Matching in Power Amplifier Circuits”, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to U.S. patent application Ser. No. 13/828,121, filed on Mar.
- the present application may also be related to U.S. patent application Ser. No. 13/967,866 entitled “Tunable Impedance Matching Network”, filed on Aug. 15, 2013, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to U.S. patent application Ser. No. 13/797,686 entitled “Variable Impedance Match and Variable Harmonic Terminations for Different Modes and Frequency Bands”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety.
- the present application may also be related to U.S. patent application Ser. No.
- the present teachings relate to RF (radio frequency) circuits. More particularly, the present teachings relate to methods and apparatuses for reducing duplexer loss in an RF transmit path.
- Radio frequency (RF) devices such as cell phone transmitters
- RF Radio frequency
- Radio frequency (RF) devices are becoming increasingly complex due to additional frequency bands, more complex modulation schemes, higher modulation bandwidths, and the introduction of data throughput improvement schemes such as simultaneous RF transmission and/or reception within a same or different, but closely spaced, bands or channels within a band (e.g. voice, data), and aggregate transmission wherein information is multiplexed over parallel RF transmissions.
- a radio frequency (RF) circuital arrangement comprising: an RF transmit path comprising: a plurality of cascaded amplifiers configured, during operation of the circuital arrangement, to amplify a transmit RF signal, the transmit RF signal operating over a first frequency band, and a first filter placed between two consecutive amplifiers of the plurality of cascaded amplifiers, the first filter configured during operation of the circuital arrangement, to attenuate a second frequency hand different from the first frequency band, and pass the first frequency band; an RF receive path configured, during operation of the circuital arrangement, to receive a receive RF signal over the second frequency band, and a bi-directional transmit/receive circuit connected to the RF transmit path and to the RF receive path, the bi-directional transmit/receive circuit comprising: a second filter configured, during operation of the circuital arrangement, to pass the first frequency band and to attenuate the second frequency band.
- a method for reducing loss of a transmit RF signal in a duplexer unit of an radio frequency (RF) transmit/receive system comprising: providing an RF transmit path comprising a plurality of cascaded amplifiers; inserting, in-between two amplifiers of the plurality of cascaded amplifiers, a first filter; based on the inserting, attenuating a receive frequency band and passing a transmit frequency band; based on the attenuating, relaxing design parameters of a second filter of a duplexer unit, the second filter being configured to pass the transmit frequency band and to attenuate the receive frequency band; based on the relaxing, reducing a number of filter stages of the second filter, and based on the reducing, reducing an attenuation at the transmit frequency band through the second filter of the duplexer unit.
- RF radio frequency
- FIG. 1 shows an exemplary block diagram of a transmit/receive system comprising a transmit path and a receive path of an RF front-end stage of an RF device, as used, for example, in a cellular phone.
- FIG. 2 shows an exemplary embodiment according to the present disclosure of a transmit/receive system comprising a filter in a transmit path.
- FIGS. 3A-3C and FIGS. 4A-4C show various exemplary embodiments according to the present disclosure of a shape of the filter in the transmit path of FIG. 2 .
- FIG. 5 shows a graphical representation of analysis performed on the transmit path of FIG. 2 when using the filter in-between amplification stages, as depicted in FIG. 2 .
- the present disclosure describes electrical circuits in electronics devices (e.g., cell phones, radios) having a plurality of devices, such as for example, transistors (e.g., MOSFETs).
- transistors e.g., MOSFETs
- Such electrical circuits comprising transistors can be arranged as amplifiers.
- a plurality of such amplifiers can be arranged in a so-called “scalable periphery” (SP) architecture of amplifiers where a total number (e.g., 64) of amplifier segments are provided.
- SP scalable periphery
- the number of active devices e.g., 64, 32, etc.
- a portion of the total number of amplifiers e.g. 1/64, 2/64, 40% of 64, etc. . . .
- the electronic device may desire to output a certain amount of power, which in turn, may require 32 of 64 SP amplifier segments to be used.
- a lower amount of output power may be desired, in which case, for example, only 16 of 64 SP amplifier segments are used.
- the number of amplifier segments used can be inferred by a nominal desired output power as a function of the maximum output power (e.g.
- the scalable periphery amplifier devices can be connected to corresponding impedance matching circuits.
- the number of amplifier segments of the scalable periphery amplifier device that are turned on or turned off at a given moment can be according to a modulation applied to an input RF signal, a desired output power, a desired linearity requirement of the amplifier or any number of other requirements.
- amplifier as used in the present disclosure is intended to refer to amplifiers comprising single or stacked transistors configured as amplifiers, and can be used interchangeably with the term “power amplifier (PA)”.
- PA power amplifier
- Such terms can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal.
- Stacked transistor amplifiers are described for example in U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety.
- Such amplifier and power amplifiers can be applicable to amplifiers and power amplifiers of any stages (e.g., pre-driver, driver, final), known to those skilled in the art.
- the term “mode” can refer to a wireless standard and its attendant modulation and coding scheme or schemes. As different modes may require different modulation schemes, these may affect required channel bandwidth as well as affect the peak-to-average-ratio (PAR), also referred to as peak-to-average-power-ratio (PAPR), as well as other parameters known to the skilled person.
- PAR peak-to-average-ratio
- PAPR peak-to-average-power-ratio
- wireless standards include Global System for Mobile Communications (GSM), code division multiple access (CDMA), Worldwide Interoperability for Microwave Access (WiMAX), Long Term Evolution (LTE), as well as other wireless standards identifiable to a person skilled in the art.
- modulation and coding schemes include binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), quadrature amplitude modulation (QAM), 8-QAM, 64-QAM, as well as other modulation and coding schemes identifiable to a person skilled in the art.
- BPSK binary phase-shift keying
- QPSK quadrature phase-shift keying
- QAM quadrature amplitude modulation
- 8-QAM 8-QAM
- 64-QAM 64-QAM
- band can refer to a frequency range. More in particular, the term “band” as used herein refers to a frequency range that can be defined by a wireless standard such as, but not limited to, wideband code division multiple access (WCDMA) and long term evolution (LTE).
- WCDMA wideband code division multiple access
- LTE long term evolution
- channel can refer to a frequency range. More in particular, the term “channel” as used herein refers to a frequency range within a band. As such, a band can comprise several channels used to transmit/receive a same wireless standard.
- notch filter can refer to a band-stop filter, also known as a band-rejection filter or a band-reject filter, with a narrow stopband.
- Such tilter passes most frequencies unaltered (e.g. without attenuation) and attenuates only those frequencies in a specific frequency range defined by the stopband.
- FIG. 1 shows a block diagram of a bi-directional transmit/receive communication system ( 100 ) comprising a transmit path and a receive path which can be used in a multi-band and multi-channel RF front-end stage of an RF device, such as, for example, a cellular phone.
- the transmit/receive system ( 100 ) of FIG. 1 comprises a transceiver unit ( 105 ) adapted to generate an RF signal to be transmitted via an antenna ( 120 ) of the system.
- An RF transmit path of the transmit/receive system ( 100 ) can comprise an RF amplification stage comprising a driver stage ( 150 ) and a final stage ( 160 ), and a duplexer unit ( 110 ).
- the RF amplification stage ( 150 + 160 ) can amplify the RF signal provided by the transceiver unit ( 105 ) and further shape the RF signal in a way more suitable for transmission, such as described in, for example, U.S. patent application Ser. No. 13/829,946 and U.S. patent application Ser. No. 13/830,555, whose disclosures are incorporated herein by reference in their entirety.
- the amplification stage e.g. 150 + 160
- each of the series connected amplifiers may further comprise stacked transistors such as described in, for example, U.S. Pat. No. 7,248,120, incorporated herein by reference in its entirety, and/or parallel amplifiers such as scalable periphery amplifiers, as described in, for example, U.S. patent application Ser. No. 13/797,779, incorporated herein by reference in its entirety and/or efficiency improvement amplifiers such as envelope tracking amplifiers, as described in U.S. patent application Ser. No. 13/829,946, incorporated herein by reference in its entirety.
- the various series connected (e.g. cascaded) amplifiers e.g.
- 150 , 160 may further be coupled via impedance matching and/or harmonic termination networks, as described in, for example, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686, incorporated herein by reference in its entirety.
- an RF signal amplified via the amplification stage ( 150 + 160 ) is fed to the duplexer unit ( 110 ), which duplexer unit further filters the RF signal to be transmitted through a band-pass filter ( 130 ) centered at a frequency (fi) of operation of the band within which the RF signal is transmitted.
- the duplexer unit ( 130 ) can allow simultaneous transmit and receive via a same antenna ( 120 ) by filtering the transmit RF signal such as not to affect (e.g. overload) a receive RF signal to the receive path and filtering a receive RF signal, via a receive band-pass filter ( 140 ), according to a receive frequency band and channel (e.g. at a center frequency f R ).
- a received RF signal subsequent to filtering by the duplexer ( 110 ), can be fed to the transceiver unit ( 105 ) via an internal amplifier (e.g. low noise amplifier) which is tuned for the frequency of the received RF signal and has an input stage closely matched to the receive path electrical characteristics (e.g. impedance) at the tuned frequency.
- the transceiver unit ( 105 ) can further down convert the received amplified signal to an intermediate frequency (IF) signal used for decoding of the information (e.g. voice, data) in the received RF signal.
- IF intermediate frequency
- the duplexer ( 110 ) is used to isolate the receiver from the transmitter while permitting the two channels to use the common antenna ( 120 ). Via its built in filters, the duplexer provides adequate rejection of transmitter noise occurring at the receive frequency band and must provide sufficient isolation between the receive and transmit channels such as to prevent receiver desensitization (e.g. overload via residual transmit RF signal and/or associated noise).
- any electronic device such as the amplifier ( 150 , 160 ) of FIG. 1 , generates some deterministic thermal noise at its input, a power of which can be given by the formula:
- Such power associated to the thermal noise, as given by formula (1), at an input of an amplifier, can get amplified via the gain of the amplifier and can therefore produce an amplified noise (e.g. power, voltage) at the output of the amplifier which is a factor of G higher than the noise at the input of the amplifier, G being the gain of the amplifier over the frequency range of interest (e.g. determined by bandwidth B).
- an amplified noise e.g. power, voltage
- Noise Total N 1 ⁇ G 1 . . . G k +N 2 ⁇ G 2 . . . G k + . . . +N k ⁇ G k (2)
- G 1 is the gain of the i th amplifier of the cascaded k amplifiers
- N is the input power associated to the thermal noise at the input of the i th amplifier, as given by formula (1).
- a noise contributed by an amplifier further from the output of the cascaded arrangement of amplifiers can have a greater impact on the total noise Noise Total of the arrangement of cascaded amplifiers, as it gets amplified by a larger number of amplifiers.
- noise at the output of a corresponding amplifier such as one in a transceiver unit ( 105 ) of FIG. 1 which feeds an RF signal to the transmit path, gets added to the input thermal noise of the first amplifier in the arrangement. Therefore, in the particular case of the first amplifier in the arrangement, we can have:
- N 1 N xcvr +k ⁇ T ⁇ B ⁇ F n1 (3)
- N xcvr is a contributing noise power from the transceiver unit (e.g. 105 of FIG. 1 ).
- Such noise can be defined as the transmit channel noise of the transmit/receive system ( 100 ) of FIG. 1 and can be present at an input terminal of the duplexer ( 110 ) connected to the transmit path (e.g. amplifier 160 ).
- a duplexer such as duplexer ( 110 ) of FIG. 1 , comprises two sharp band-pass filters (e.g. opposite of notch filters) ( 130 , 140 ), a transmit filter ( 130 ) within the transmit path (center frequency at f T ), and a receive filter ( 140 ) within the receive path (center frequency at f R ).
- the transmit filter ( 130 ) needs to attenuate transmit (Tx) channel noise (e.g. as per expressions (4) above) at the receiver frequency band, so not to desensitize the receiver circuitry, as a power associated to the transmit channel noise as provided by ( 4 ) can be higher than a power of a receive signal at the antenna ( 120 ).
- the transmit filter ( 130 ) design Due to the high gain of the combination of driver/final amplifiers ( 150 / 160 ) in the transmission channel, which not only amplifies the transmission signal but also the thermal noise within electronic elements in the transmit path as well as the noise at the output stage of the transceiver unit ( 105 ), commonly a greater than about 35 dB attenuation in the receive frequency band is desired for the transmit filter ( 130 ) design to attenuate the receive band noise of the transmit path, although a preferred value can be in a range of 45-50 dB attenuation. Due to the desired performance (e.g. greater than about 35 dB attenuation in a narrow frequency band) and the associated frequency range (e.g. center frequency of several GHz), such filters (e.g.
- transmit filter 130 are typically chosen to be surface acoustic wave (SAW) or bulk acoustic wave (BAW) filters as opposed to the simpler RLC filters.
- SAW surface acoustic wave
- BAW bulk acoustic wave
- the stringent filter design requirement (e.g. large rejection at the vicinity of the pass hand) of the transmit filter ( 130 ) can create some undesirable transmit signal loss at the output (e.g. attenuation within the Tx frequency band, insertion loss) which can be greater than about 2 dB. Reducing the amplitude (e.g. power) of the transmit channel noise in the Rx frequency band, allows for a more relaxed design of the filter ( 130 ) (e.g.
- the filter ( 130 ) of the duplexer ( 110 ) can reduce the amount of the transmission signal loss due to the (transmit) filter ( 130 ) of the duplexer ( 110 ), and can also allow usage of a simpler RLC filter (e.g. a filter comprising one or more shunt and/or series RLC stages) in lieu of the SAW/BAW filter.
- a simpler RLC filter e.g. a filter comprising one or more shunt and/or series RLC stages
- relaxing design parameters of the filter ( 130 ) can reduce the number of stages (e.g. resonant stages) the filter contains and therefore reduce the insertion loss (e.g. attenuation) of the filter, as each stage can increase the insertion loss of the filter.
- transmit channel noise at a frequency band of the receive channel can be reduced by using a filter which is configured to attenuate the receive frequency band while not affecting (e.g. having a minimum impact on) the transmit frequency band.
- a band-attenuating filter can be one of several types of filters known to a person skilled in the art, which type can depend on a relative position, within a frequency spectrum, of the receive and transmit frequency bands, as further explained in the ensuing paragraphs.
- a filter e.g. a band-reject filter, low-pass filter, high-pass filter, notch filter, etc. . . .
- a filter designed to attenuate the receive frequency band centered at the receive center frequency f R , in-between the driver stage ( 150 ) and the final stage ( 160 ), as depicted in the bi-directional transmit/receive communication system ( 200 ) of FIG. 2
- transmit channel noise at the receive frequency band, contributed by the driver stage ( 150 ) and the associated gain e.g. as per expression (4) above
- Such reduction e.g. power attenuation
- a int is the attenuation provided by the inter-stage (e.g. positioned between two amplification stages of the cascaded arrangement of amplifiers) filter ( 270 ) within the receive frequency band.
- such attenuation provided by the filter ( 270 ) can be in a range of about 10-25 dB (e.g. greater than about 10 dB).
- the person skilled in the art will appreciate the advantage of lowering such noise (e.g. by greater than about 10 dB) has on the design of the transmit filter ( 130 ) which can subsequently be designed with more relaxed design parameters.
- a more relaxed transmit filter ( 130 ) design can reduce the amount of attenuation within the transmit frequency band (e.g. insertion loss) for an improvement in transmit RF signal power. For example, a typical 2-3 dB insertion loss (e.g.
- a typical transmit filter ( 130 ) e.g. SAW/BAW filter
- a duplexer unit ( 110 ) can be reduced to half or to about 1-1.5 dB after relaxing the transmit filter design per the provided embodiment according to the present disclosure. Relaxing of the transmit filter design can in some instances reduce the insertion loss to a value which is less than about 2 dB, and still providing a benefit over the typical larger than about 2 dB insertion loss of a transmit filter ( 130 ) implemented using SAW/BAW filters.
- PA power amplifier
- a relaxed design of the transmit filter ( 130 ) can also allow for fewer stages in the design of the filter, thus fewer components for a reduction in effective size of the filter.
- such filter can be designed using standard RLC filter design techniques known to the skilled person, and therefore providing some cost benefits over the typical SAW/BAW filter implementation as well as possibility for monolithic integration of the filter within a duplexer integrated circuit (IC) or other.
- IC duplexer integrated circuit
- FIG. 5 shows a graphical representation of analysis performed on the transmit path when using an inter-stage filter ( 270 ) between the driver amplifier ( 150 ) and the final amplifier ( 160 ).
- the graph of FIG. 5 is based on expression (5) and a set of assumptions as represented by the Table 1 below.
- the set of assumptions contained in Table 1 show typical and desired values for the various operating parameters of the transmit/receive system ( 200 ) of FIG. 2 . Based on the graph depicted in FIG. 5 , the person skilled in the art will recognize that a preferred value for a gain of the final stage when considering loss (e.g.
- the attenuation of the duplexer ( 130 ) and loss of the inter-stage filter ( 270 ) can be in the range of 12-14 dB.
- the graph of FIG. 5 when the final stage gain is in the range of 12-14 dB, a higher efficiency improvement for a transmitted signal at the output of the duplexer ( 130 ) can be obtained.
- the graph, and corresponding tabulated data show that when the final amplifier stage gain is reduced to a certain level, then higher power can be lost in the inter-stage filter, while increasing the final stage gain to a certain level, can limit the amount of relaxation of the duplexer attenuation.
- the noise figure of the final amplifier stage ( 160 ) should be as low as possible for optimum improvement in efficiency when using the inter-stage filter ( 160 ).
- a noise figure of less than 5 dB is reasonable and used within the set of assumptions associated to the graph of FIG. 5 .
- the attenuation of the inter-stage filter ( 270 ) is such as to attenuate the receive band noise by an amount greater than or equal to (N xcvr +F driver ) ⁇ G driver for the improvement (e.g. via insertion of the inter-stage filter) to have maximum effect.
- Such attenuation can get the noise level into the final amplifier stage ( 160 ) down to the thermal noise level.
- Attenuation at the receive frequency band per the various embodiments of the present disclosure can be performed by the filter ( 270 ) as depicted in FIG. 2 .
- Design parameters of such filter can be such as to attenuate a signal at a frequency within the receive frequency band while passing unaltered (e.g. no or minimum attenuation) a signal at a frequency within the transmit frequency band.
- the receive band is attenuated and the transmit band is substantially unaltered.
- substantially unaltered can mean a power loss due to insertion of the filter within the transmit path of less than 2 dB. It should be noted that such loss in front of the final amplifier stage ( 160 ) has a lesser effect on efficiency than a loss at the output of the final amplifier stage ( 160 ).
- FIGS. 3A-3C show a frequency map comprising a frequency content of the receive band ( 310 ) centered around the receive band center frequency f R , and a frequency content of the transmit band ( 320 ) centered around the transmit band center frequency f T , for the case where the frequency f T is higher than the frequency f R .
- elements ( 310 ) and ( 320 ) of FIGS. 3A-3C are only relevant per their attributes with respect to the frequency content (e.g. X-axis of the frequency map). Superimposed with the described frequency map.
- FIGS. 3A-3C also contain a frequency response ( 350 a - 350 c ) of the filter ( 270 ) of FIG.
- the filter ( 270 ) can have a variety of frequency responses such as to satisfy its design requirements, which is to attenuate the receive band and to pass the transmit hand.
- filter ( 270 ) can be designed as a high pass filter with a frequency response ( 350 a ).
- Such high pass filter can be designed such as to comprise a cutoff frequency at a frequency between a higher frequency content of the receive band ( 310 ) and a lower frequency content of the transmit band ( 320 ) as depicted in FIG. 3A .
- FIGS. 3B and 3C Alternative exemplary frequency responses for the case where the frequency f T is higher than the frequency f R are depicted in FIGS. 3B and 3C , such as, for example, a wide band-reject filter with a frequency response of FIG. 3B and a narrow band-reject filter with a frequency response of FIG. 3C .
- the person skilled in the art can find other types of filter whose frequency responses attenuate signals within a region of the receive band ( 310 ) and pass signals within a region of the transmit band ( 320 ), such as, for example, a pass-band filter (e.g. FIG. 4B ) passing a band comprising the transmit band ( 320 ) and stopping (e.g.
- FIGS. 3A-3C should not be considered as limiting the scope of the teachings according to the present disclosure, but rather as exemplary embodiments of the inventive concept provided by those teachings.
- FIGS. 4A-4C show a frequency map comprising a frequency content of the receive band ( 410 ) centered around the receive band center frequency f R , and a frequency content of the transmit band ( 420 ) centered around the transmit band center frequency f T , for the case where the frequency f T is lower than the frequency f T .
- FIGS. 4A-4C also contain a frequency response ( 450 a - 450 c ) of the filter ( 270 ) of FIG. 2 which is described in the previous sections of the present disclosure. According to the various embodiments of the present disclosure and as depicted by FIGS.
- the filter ( 270 ) can have a variety of frequency responses such as to satisfy its design requirements, which is to attenuate the receive band and to pass the transmit band, such as, for example, a low-pass filter, a band-pass filter and a notch-filter whose frequency responses are represented in FIGS. 4A-4C by items ( 450 a - 450 c ) respectively.
- Realization of such filters represented by their frequency responses in FIGS. 3A-3C and FIGS. 4A-4C using, for example, RLC networks or SAW/BAW, is beyond the scope of this disclosure and well within the ability of the person skilled in the art.
- Some example realizations of such filters are described, for example, in the referenced U.S. application Ser. No. ______ entitled “Integrated Tunable Filter Architecture” (Attorney Docket No. PER-115-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
- a transmit/receive RF signal can be in correspondence of a frequency band associated to a wireless standard (e.g. mode), and in turn, the frequency band can comprise a plurality of channels which can be used to transmit/receive an RF signal according the defined modulation scheme of the wireless standard.
- a same transmit/receive system such as one depicted in FIG. 1 and FIG. 2 , can be configured to operate over various modes (e.g. frequency, modulation).
- 4A-4C can be a tunable filter (e.g. tunable low-pass filter, tunable high-pass filter, tunable band-reject filter, etc. . . . ), such as to allow tuning of a corresponding frequency response according to the various center frequencies corresponding to various modes of operation of the transmit/receive system ( 200 ) of FIG. 2 , such as to maintain the design goal of passing an attending transmit frequency band (e.g. in correspondence of a transmit channel) while attenuating an attending receive frequency band (e.g. in correspondence of a receive channel).
- a signal-aware processor e.g. controller
- a signal-aware processor which knows of a current mode of operation of the system and a corresponding frequency band (e.g.
- Such transmit, receive), can control the tunable filter ( 270 ) to reject a receive frequency band while passing a transmit frequency band.
- An example of such signal-aware processor is the transceiver unit ( 105 ).
- such tunable filter ( 270 ) can comprise one or more stages (e.g. resistor-inductor-capacitor RLC) interconnected in a series and/or a shunt configuration and coupled and/or connected to the transmit path (e.g. between driver 150 and final 160 ) in a series and/or shunt configuration (series configuration shown in FIG. 2 ).
- the system block diagram according to an embodiment of the present disclosure depicted in FIG. 2 is a simplistic representation of a single path transmit/receive system used in an RF front-end stage.
- Such front-end stage can include a plurality of similar transmit/receive paths sharing the same antenna ( 120 ), and the same transceiver unit ( 105 ).
- a similar filter ( 270 ) can be placed in a transmit path of each of the plurality of similar transmit/receive paths such as to reduce transmit channel noise over a corresponding receive frequency band and provide the same benefits as discussed in relation to the single transmit path and single receive path system ( 200 ) of FIG. 2 .
- the tunable filters described in the various embodiments according to the present disclosure can be constructed using one or more variable reactive elements, such as variable capacitors and variable inductors.
- Digitally tunable capacitors (DTC) and/or digitally tunable inductors as described in, for example.
- International Application No. PCT/US2009/001358 and U.S. patent application Ser. No. 13/595,893, whose disclosures are incorporated herein by reference in their entirety, can also be used in constructing such tunable filters (e.g. low-pass, high-pass, band-pass, band-reject, notch, etc. . . . ).
- the person skilled in the art readily knows how to realize such tunable filters and how to select components with values (e.g.
- Tuning of such tunable filter can comprise varying a value of one or more of its variable reactive elements under control of a signal-aware processor as discussed in the prior sections of the present disclosure.
- the various exemplary embodiments of the present disclosure are not limited to a transmit path with an amplification stage comprising two amplifiers ( 150 , 160 ), and transmit/receive systems with amplification stages in their transmit paths comprising more than two amplifiers can also benefit from the teachings of the present disclosure.
- more than one, such as two or more, tunable filters ( 270 ) can be placed in various inter-stage locations of an amplification stage comprising more than two amplifiers (e.g. stages).
- Such configuration can allow attenuation of the transmit channel noise over a same frequency band corresponding to a receive signal at various points in the transmit path, with a net effect of reducing overall noise at the output of the transmit path.
- amplification of the noise also increases, and therefore an increased number of filters ( 270 ) at various points of the transmit path can be desirable.
- the tunable filter ( 270 ) can be monolithically integrated with the driver ( 150 ) and/or with the final amplifier ( 160 ).
- Monolithic integration of the amplification stage e.g. comprising driver ( 150 ) and final ( 160 )
- Such monolithically integrated amplification stage e.g. 150 and 160
- a duplexer unit ( 130 ) comprising RLC filters such as per the relaxed design embodiments provided by the teaching according to the present disclosure, can also be monolithically integrated, entirely or partially, together with other components such as ( 150 ), ( 160 ) and ( 270 ) of the transmit/receive communication system ( 200 ) of FIG. 2 .
- Latter monolithic integration of the duplexer unit is yet another benefit of not using a SAW/BAW filter in the design of the duplexer unit provided by the present teachings.
- the system diagram of FIG. 2 only shows a driver ( 150 ), a final ( 160 ), a filter ( 270 ) and a duplexer tilter ( 130 ) as part of a transmit path of the system ( 200 )
- other components may be part of such transmit path, such as, for example, tunable match circuits and/or variable harmonic terminations, which can also partially or entirely be monolithically integrated with the driver ( 150 ), the final ( 160 ) and the filter ( 270 ).
- Tunable match circuits are described, for example, in the referenced U.S. patent application Ser. No.
Abstract
Methods and devices are described for reducing transmit RF signal loss in a bi-directional RF transmit/receive system with a duplexer circuit. In one case a filter in a transmit path is used such as to reduce amplified noise in a receive frequency band.
Description
- The present application is related to U.S. patent application Ser. No. ______ entitled “Methods for Increasing RF Throughput Via Usage of Tunable Filters” (Attorney Docket No. PER-099-PAP) filed on even date herewith and incorporated herein by reference in its entirety. The present application is also related to U.S. patent application Ser. No. ______ entitled “Integrated Tunable Filter Architecture” (Attorney Docket No. PER-115-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
- The present application may be related to U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar. 3, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to International Application No. PCT/US2009/001358, entitled “Method and Apparatus for use in digitally tuning a capacitor in an integrated circuit device”, filed on Mar. 2, 2009, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/595,893, entitled “Method and Apparatus for Use in Tuning Reactance in a Circuit Device”, filed on Aug. 27, 2012, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,312, filed on Sep. 30, 2013, entitled “Methods and Devices for Impedance Matching in Power Amplifier Circuits”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/828,121, filed on Mar. 14, 2013, entitled “Autonomous Power Amplifier Optimization”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/967,866 entitled “Tunable Impedance Matching Network”, filed on Aug. 15, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/797,686 entitled “Variable Impedance Match and Variable Harmonic Terminations for Different Modes and Frequency Bands”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,331 entitled “Methods and Devices for Thermal Control in Power Amplifier Circuits”, filed on Sep. 30, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/829,946 entitled “Amplifier Dynamic Bias Adjustment for Envelope Tracking, filed on Mar. 14, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to US patent application Ser. No. 13/830,555 entitled “Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode”, filed on Mar. 14, 2013, the disclosure of which is incorporated herein in its entirety.
- 1. Field
- The present teachings relate to RF (radio frequency) circuits. More particularly, the present teachings relate to methods and apparatuses for reducing duplexer loss in an RF transmit path.
- 2. Description of Related Art
- Radio frequency (RF) devices, such as cell phone transmitters, are becoming increasingly complex due to additional frequency bands, more complex modulation schemes, higher modulation bandwidths, and the introduction of data throughput improvement schemes such as simultaneous RF transmission and/or reception within a same or different, but closely spaced, bands or channels within a band (e.g. voice, data), and aggregate transmission wherein information is multiplexed over parallel RF transmissions. Due to the closely spaced transmit/receive frequency bands/channels of a front-end stage used in such RF devices, burden on a duplexer design used in such RF devices has increased, where associated sharp band-pass filters can isolate an RF signal being transmitted from a receive path at the cost of attenuating the RF signal being transmitted.
- According to a first aspect of the present disclosure, a radio frequency (RF) circuital arrangement is presented, the arrangement comprising: an RF transmit path comprising: a plurality of cascaded amplifiers configured, during operation of the circuital arrangement, to amplify a transmit RF signal, the transmit RF signal operating over a first frequency band, and a first filter placed between two consecutive amplifiers of the plurality of cascaded amplifiers, the first filter configured during operation of the circuital arrangement, to attenuate a second frequency hand different from the first frequency band, and pass the first frequency band; an RF receive path configured, during operation of the circuital arrangement, to receive a receive RF signal over the second frequency band, and a bi-directional transmit/receive circuit connected to the RF transmit path and to the RF receive path, the bi-directional transmit/receive circuit comprising: a second filter configured, during operation of the circuital arrangement, to pass the first frequency band and to attenuate the second frequency band.
- According to second aspect of the present disclosure, a method for reducing loss of a transmit RF signal in a duplexer unit of an radio frequency (RF) transmit/receive system, the method comprising: providing an RF transmit path comprising a plurality of cascaded amplifiers; inserting, in-between two amplifiers of the plurality of cascaded amplifiers, a first filter; based on the inserting, attenuating a receive frequency band and passing a transmit frequency band; based on the attenuating, relaxing design parameters of a second filter of a duplexer unit, the second filter being configured to pass the transmit frequency band and to attenuate the receive frequency band; based on the relaxing, reducing a number of filter stages of the second filter, and based on the reducing, reducing an attenuation at the transmit frequency band through the second filter of the duplexer unit.
- The accompanying drawings, which are incorporated into and constitute a part of this specification, illustrate one or more embodiments of the present disclosure and, together with the description of example embodiments, serve to explain the principles and implementations of the disclosure.
-
FIG. 1 shows an exemplary block diagram of a transmit/receive system comprising a transmit path and a receive path of an RF front-end stage of an RF device, as used, for example, in a cellular phone. -
FIG. 2 shows an exemplary embodiment according to the present disclosure of a transmit/receive system comprising a filter in a transmit path. -
FIGS. 3A-3C andFIGS. 4A-4C show various exemplary embodiments according to the present disclosure of a shape of the filter in the transmit path ofFIG. 2 . -
FIG. 5 shows a graphical representation of analysis performed on the transmit path ofFIG. 2 when using the filter in-between amplification stages, as depicted inFIG. 2 . - Throughout this description, embodiments and variations are described for the purpose of illustrating uses and implementations of the inventive concept. The illustrative description should be understood as presenting examples of the inventive concept, rather than as limiting the scope of the concept as disclosed herein.
- The present disclosure describes electrical circuits in electronics devices (e.g., cell phones, radios) having a plurality of devices, such as for example, transistors (e.g., MOSFETs). Persons skilled in the art will appreciate that such electrical circuits comprising transistors can be arranged as amplifiers. As described in a previous disclosure (U.S. patent application Ser. No. 13/797,779, incorporated herein by reference in its entirety), a plurality of such amplifiers can be arranged in a so-called “scalable periphery” (SP) architecture of amplifiers where a total number (e.g., 64) of amplifier segments are provided. Depending on the specific requirements of an application, the number of active devices (e.g., 64, 32, etc.), or a portion of the total number of amplifiers (e.g. 1/64, 2/64, 40% of 64, etc. . . . ), can be changed for each application. For example, in some instances, the electronic device may desire to output a certain amount of power, which in turn, may require 32 of 64 SP amplifier segments to be used. In yet another application of the electronic device, a lower amount of output power may be desired, in which case, for example, only 16 of 64 SP amplifier segments are used. According to some embodiments, the number of amplifier segments used can be inferred by a nominal desired output power as a function of the maximum output power (e.g. when all the segments are activated). For example, if 30% of the maximum output power is desired, then a portion of the total amplifier segments corresponding to 30% of the total number of segments can be enabled. The scalable periphery amplifier devices can be connected to corresponding impedance matching circuits. The number of amplifier segments of the scalable periphery amplifier device that are turned on or turned off at a given moment can be according to a modulation applied to an input RF signal, a desired output power, a desired linearity requirement of the amplifier or any number of other requirements.
- The term “amplifier” as used in the present disclosure is intended to refer to amplifiers comprising single or stacked transistors configured as amplifiers, and can be used interchangeably with the term “power amplifier (PA)”. Such terms can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal. Stacked transistor amplifiers are described for example in U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. Such amplifier and power amplifiers can be applicable to amplifiers and power amplifiers of any stages (e.g., pre-driver, driver, final), known to those skilled in the art.
- As used in the present disclosure, the term “mode” can refer to a wireless standard and its attendant modulation and coding scheme or schemes. As different modes may require different modulation schemes, these may affect required channel bandwidth as well as affect the peak-to-average-ratio (PAR), also referred to as peak-to-average-power-ratio (PAPR), as well as other parameters known to the skilled person. Examples of wireless standards include Global System for Mobile Communications (GSM), code division multiple access (CDMA), Worldwide Interoperability for Microwave Access (WiMAX), Long Term Evolution (LTE), as well as other wireless standards identifiable to a person skilled in the art. Examples of modulation and coding schemes include binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), quadrature amplitude modulation (QAM), 8-QAM, 64-QAM, as well as other modulation and coding schemes identifiable to a person skilled in the art.
- As used in the present disclosure, the term “band” can refer to a frequency range. More in particular, the term “band” as used herein refers to a frequency range that can be defined by a wireless standard such as, but not limited to, wideband code division multiple access (WCDMA) and long term evolution (LTE).
- As used in the present disclosure, the term “channel” can refer to a frequency range. More in particular, the term “channel” as used herein refers to a frequency range within a band. As such, a band can comprise several channels used to transmit/receive a same wireless standard.
- As used in the present disclosure, the term “notch filter” can refer to a band-stop filter, also known as a band-rejection filter or a band-reject filter, with a narrow stopband. Such tilter passes most frequencies unaltered (e.g. without attenuation) and attenuates only those frequencies in a specific frequency range defined by the stopband.
-
FIG. 1 shows a block diagram of a bi-directional transmit/receive communication system (100) comprising a transmit path and a receive path which can be used in a multi-band and multi-channel RF front-end stage of an RF device, such as, for example, a cellular phone. The transmit/receive system (100) ofFIG. 1 comprises a transceiver unit (105) adapted to generate an RF signal to be transmitted via an antenna (120) of the system. An RF transmit path of the transmit/receive system (100) can comprise an RF amplification stage comprising a driver stage (150) and a final stage (160), and a duplexer unit (110). The RF amplification stage (150+160) can amplify the RF signal provided by the transceiver unit (105) and further shape the RF signal in a way more suitable for transmission, such as described in, for example, U.S. patent application Ser. No. 13/829,946 and U.S. patent application Ser. No. 13/830,555, whose disclosures are incorporated herein by reference in their entirety. Furthermore, as known to the person skilled in the art, the amplification stage (e.g. 150+160) can comprise one or more (e.g. 3, 4, . . . ) series connected (e.g. cascaded) amplifiers, such as the driver (150) and the final (160), wherein each of the series connected amplifiers may further comprise stacked transistors such as described in, for example, U.S. Pat. No. 7,248,120, incorporated herein by reference in its entirety, and/or parallel amplifiers such as scalable periphery amplifiers, as described in, for example, U.S. patent application Ser. No. 13/797,779, incorporated herein by reference in its entirety and/or efficiency improvement amplifiers such as envelope tracking amplifiers, as described in U.S. patent application Ser. No. 13/829,946, incorporated herein by reference in its entirety. Furthermore, the various series connected (e.g. cascaded) amplifiers (e.g. 150, 160) may further be coupled via impedance matching and/or harmonic termination networks, as described in, for example, U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 13/797,686, incorporated herein by reference in its entirety. - In the circuital arrangement of
FIG. 1 , an RF signal amplified via the amplification stage (150+160) is fed to the duplexer unit (110), which duplexer unit further filters the RF signal to be transmitted through a band-pass filter (130) centered at a frequency (fi) of operation of the band within which the RF signal is transmitted. The duplexer unit (130) can allow simultaneous transmit and receive via a same antenna (120) by filtering the transmit RF signal such as not to affect (e.g. overload) a receive RF signal to the receive path and filtering a receive RF signal, via a receive band-pass filter (140), according to a receive frequency band and channel (e.g. at a center frequency fR). A received RF signal, subsequent to filtering by the duplexer (110), can be fed to the transceiver unit (105) via an internal amplifier (e.g. low noise amplifier) which is tuned for the frequency of the received RF signal and has an input stage closely matched to the receive path electrical characteristics (e.g. impedance) at the tuned frequency. Once the received RF signal is amplified, the transceiver unit (105) can further down convert the received amplified signal to an intermediate frequency (IF) signal used for decoding of the information (e.g. voice, data) in the received RF signal. - The person skilled in the art readily knows that the bi-directional communication system, such as the transmit/receive system (100) of
FIG. 1 , the duplexer (110) is used to isolate the receiver from the transmitter while permitting the two channels to use the common antenna (120). Via its built in filters, the duplexer provides adequate rejection of transmitter noise occurring at the receive frequency band and must provide sufficient isolation between the receive and transmit channels such as to prevent receiver desensitization (e.g. overload via residual transmit RF signal and/or associated noise). - The person skilled in the art further knows that any electronic device, such as the amplifier (150, 160) of
FIG. 1 , generates some deterministic thermal noise at its input, a power of which can be given by the formula: -
Noisepower =k·T·B·F n (1) - where k is the Boltzmann's constant, T is the operating temperature of the device, B is the bandwidth over which the thermal noise is being considered, and Fn is a constant noise factor (figure of merit). Such power associated to the thermal noise, as given by formula (1), at an input of an amplifier, can get amplified via the gain of the amplifier and can therefore produce an amplified noise (e.g. power, voltage) at the output of the amplifier which is a factor of G higher than the noise at the input of the amplifier, G being the gain of the amplifier over the frequency range of interest (e.g. determined by bandwidth B).
- Therefore, in a configuration where a cascaded arrangement of amplifiers is used, such as the configuration depicted in
FIG. 1 with amplifiers (150) and (160) being cascaded, power associated with thermal noise of an amplifier in the arrangement can get multiplied by each of the subsequent amplifiers. As such, a total power at the output of the cascaded amplifiers associated to the noise at the input of each amplifier, in a case where k amplifiers are cascaded, can be given by the expression: -
NoiseTotal =N 1 ·G 1 . . . G k +N 2 ·G 2 . . . G k + . . . +N k ·G k (2) - where G1 is the gain of the ith amplifier of the cascaded k amplifiers, and N, is the input power associated to the thermal noise at the input of the ith amplifier, as given by formula (1). According to the expression (2), a noise contributed by an amplifier further from the output of the cascaded arrangement of amplifiers (e.g. further from a duplexer) can have a greater impact on the total noise NoiseTotal of the arrangement of cascaded amplifiers, as it gets amplified by a larger number of amplifiers. It should be noted that in the case where an RF signal is fed to such a cascaded arrangement of amplifiers, noise at the output of a corresponding amplifier, such as one in a transceiver unit (105) of
FIG. 1 which feeds an RF signal to the transmit path, gets added to the input thermal noise of the first amplifier in the arrangement. Therefore, in the particular case of the first amplifier in the arrangement, we can have: -
N 1 =N xcvr +k·T·B·F n1 (3) - where Nxcvr is a contributing noise power from the transceiver unit (e.g. 105 of
FIG. 1 ). - Therefore, for the particular case of the two-stage cascaded arrangement of
FIG. 1 comprising a driver amplifier (150) and a final amplifier (160), the overall noise at the output of the arrangement can be represented by the expression: -
Noise=(N xcvr +k·T·B·F driver)·G driver ·G final +k·T·B·F final ·G final (4) - Such noise can be defined as the transmit channel noise of the transmit/receive system (100) of
FIG. 1 and can be present at an input terminal of the duplexer (110) connected to the transmit path (e.g. amplifier 160). - A duplexer, such as duplexer (110) of
FIG. 1 , comprises two sharp band-pass filters (e.g. opposite of notch filters) (130, 140), a transmit filter (130) within the transmit path (center frequency at fT), and a receive filter (140) within the receive path (center frequency at fR). The transmit filter (130) needs to attenuate transmit (Tx) channel noise (e.g. as per expressions (4) above) at the receiver frequency band, so not to desensitize the receiver circuitry, as a power associated to the transmit channel noise as provided by (4) can be higher than a power of a receive signal at the antenna (120). Due to the high gain of the combination of driver/final amplifiers (150/160) in the transmission channel, which not only amplifies the transmission signal but also the thermal noise within electronic elements in the transmit path as well as the noise at the output stage of the transceiver unit (105), commonly a greater than about 35 dB attenuation in the receive frequency band is desired for the transmit filter (130) design to attenuate the receive band noise of the transmit path, although a preferred value can be in a range of 45-50 dB attenuation. Due to the desired performance (e.g. greater than about 35 dB attenuation in a narrow frequency band) and the associated frequency range (e.g. center frequency of several GHz), such filters (e.g. transmit filter 130) are typically chosen to be surface acoustic wave (SAW) or bulk acoustic wave (BAW) filters as opposed to the simpler RLC filters. Furthermore, the stringent filter design requirement (e.g. large rejection at the vicinity of the pass hand) of the transmit filter (130) can create some undesirable transmit signal loss at the output (e.g. attenuation within the Tx frequency band, insertion loss) which can be greater than about 2 dB. Reducing the amplitude (e.g. power) of the transmit channel noise in the Rx frequency band, allows for a more relaxed design of the filter (130) (e.g. less attenuation/rejection required at the Rx frequency band) and thus can reduce the amount of the transmission signal loss due to the (transmit) filter (130) of the duplexer (110), and can also allow usage of a simpler RLC filter (e.g. a filter comprising one or more shunt and/or series RLC stages) in lieu of the SAW/BAW filter. The skilled person readily knows that relaxing design parameters of the filter (130) can reduce the number of stages (e.g. resonant stages) the filter contains and therefore reduce the insertion loss (e.g. attenuation) of the filter, as each stage can increase the insertion loss of the filter. It follows that according to an embodiment of the present disclosure, transmit channel noise at a frequency band of the receive channel can be reduced by using a filter which is configured to attenuate the receive frequency band while not affecting (e.g. having a minimum impact on) the transmit frequency band. Such a band-attenuating filter can be one of several types of filters known to a person skilled in the art, which type can depend on a relative position, within a frequency spectrum, of the receive and transmit frequency bands, as further explained in the ensuing paragraphs. - According to an embodiment of the present disclosure, by inserting a filter (270) (e.g. a band-reject filter, low-pass filter, high-pass filter, notch filter, etc. . . . ), designed to attenuate the receive frequency band centered at the receive center frequency fR, in-between the driver stage (150) and the final stage (160), as depicted in the bi-directional transmit/receive communication system (200) of
FIG. 2 , transmit channel noise at the receive frequency band, contributed by the driver stage (150) and the associated gain (e.g. as per expression (4) above), is reduced without affecting the transmit (Tx) channel which operates at a center frequency fT different from fR. Such reduction (e.g. power attenuation) can be expressed by the expression: -
Noise=(N xcvr +k·T·B·F driver)·G driver ·A int ·G final +k·T·B·F final ·G final (5) - where Aint is the attenuation provided by the inter-stage (e.g. positioned between two amplification stages of the cascaded arrangement of amplifiers) filter (270) within the receive frequency band.
- According to some embodiments of the present disclosure, such attenuation provided by the filter (270) can be in a range of about 10-25 dB (e.g. greater than about 10 dB). The person skilled in the art will appreciate the advantage of lowering such noise (e.g. by greater than about 10 dB) has on the design of the transmit filter (130) which can subsequently be designed with more relaxed design parameters. In turn and according to an embodiment of the present disclosure, a more relaxed transmit filter (130) design can reduce the amount of attenuation within the transmit frequency band (e.g. insertion loss) for an improvement in transmit RF signal power. For example, a typical 2-3 dB insertion loss (e.g. attenuation within the transmit frequency band) provided by a typical transmit filter (130) (e.g. SAW/BAW filter) of a duplexer unit (110) can be reduced to half or to about 1-1.5 dB after relaxing the transmit filter design per the provided embodiment according to the present disclosure. Relaxing of the transmit filter design can in some instances reduce the insertion loss to a value which is less than about 2 dB, and still providing a benefit over the typical larger than about 2 dB insertion loss of a transmit filter (130) implemented using SAW/BAW filters. The person skilled in the art will appreciate the impact of this reduction in terms of a corresponding power amplifier (PA) efficiency, as a 0.1 dB reduction in (RF signal) attenuation can increase PA efficiency by about 1% or equivalent to 10 mA reduction of current drain fir a cell phone with a 28 dBm output. Further, a relaxed design of the transmit filter (130) can also allow for fewer stages in the design of the filter, thus fewer components for a reduction in effective size of the filter. According to further embodiments of the present disclosure and due to the relaxed design requirements of the transmit filter (130), such filter can be designed using standard RLC filter design techniques known to the skilled person, and therefore providing some cost benefits over the typical SAW/BAW filter implementation as well as possibility for monolithic integration of the filter within a duplexer integrated circuit (IC) or other.
- A typical range for the gain of the final amplifier stage (160) can be 10-20 dB. A typical noise figure of the final stage can be less than 10 dB.
FIG. 5 shows a graphical representation of analysis performed on the transmit path when using an inter-stage filter (270) between the driver amplifier (150) and the final amplifier (160). The graph ofFIG. 5 is based on expression (5) and a set of assumptions as represented by the Table 1 below. The set of assumptions contained in Table 1, show typical and desired values for the various operating parameters of the transmit/receive system (200) ofFIG. 2 . Based on the graph depicted inFIG. 5 , the person skilled in the art will recognize that a preferred value for a gain of the final stage when considering loss (e.g. attenuation) of the duplexer (130) and loss of the inter-stage filter (270) can be in the range of 12-14 dB. As depicted by the graph ofFIG. 5 , when the final stage gain is in the range of 12-14 dB, a higher efficiency improvement for a transmitted signal at the output of the duplexer (130) can be obtained. The graph, and corresponding tabulated data, show that when the final amplifier stage gain is reduced to a certain level, then higher power can be lost in the inter-stage filter, while increasing the final stage gain to a certain level, can limit the amount of relaxation of the duplexer attenuation. The noise figure of the final amplifier stage (160) should be as low as possible for optimum improvement in efficiency when using the inter-stage filter (160). A noise figure of less than 5 dB is reasonable and used within the set of assumptions associated to the graph ofFIG. 5 . Furthermore, it can be desired that the attenuation of the inter-stage filter (270) is such as to attenuate the receive band noise by an amount greater than or equal to (Nxcvr+Fdriver)·Gdriver for the improvement (e.g. via insertion of the inter-stage filter) to have maximum effect. Such attenuation can get the noise level into the final amplifier stage (160) down to the thermal noise level. -
TABLE 1 Assumptions in the Analysis: Gtotal 30 dB Pout 0.8 W NFdriver 5 dB PAE PA 40 % NFfinal 5 dB nominal duplexer loss 2.2 dB noise xcvr −168.4 dBm/Hz nominal duplexer noise 45 dB attenuation kT −174.4 dBm/Hz notch IL 1.5 dB - Attenuation at the receive frequency band per the various embodiments of the present disclosure can be performed by the filter (270) as depicted in
FIG. 2 . Design parameters of such filter can be such as to attenuate a signal at a frequency within the receive frequency band while passing unaltered (e.g. no or minimum attenuation) a signal at a frequency within the transmit frequency band. As such, the receive band is attenuated and the transmit band is substantially unaltered. In this case, substantially unaltered can mean a power loss due to insertion of the filter within the transmit path of less than 2 dB. It should be noted that such loss in front of the final amplifier stage (160) has a lesser effect on efficiency than a loss at the output of the final amplifier stage (160). -
FIGS. 3A-3C show a frequency map comprising a frequency content of the receive band (310) centered around the receive band center frequency fR, and a frequency content of the transmit band (320) centered around the transmit band center frequency fT, for the case where the frequency fT is higher than the frequency fR. It should be noted that elements (310) and (320) ofFIGS. 3A-3C are only relevant per their attributes with respect to the frequency content (e.g. X-axis of the frequency map). Superimposed with the described frequency map.FIGS. 3A-3C also contain a frequency response (350 a-350 c) of the filter (270) ofFIG. 2 which is described in the previous sections of the present disclosure. According to the various embodiments of the present disclosure and as depicted byFIGS. 3A-3C , the filter (270) can have a variety of frequency responses such as to satisfy its design requirements, which is to attenuate the receive band and to pass the transmit hand. According to the exemplary embodiment of the present disclosure as depicted inFIG. 3A , filter (270) can be designed as a high pass filter with a frequency response (350 a). Such high pass filter can be designed such as to comprise a cutoff frequency at a frequency between a higher frequency content of the receive band (310) and a lower frequency content of the transmit band (320) as depicted inFIG. 3A . Alternative exemplary frequency responses for the case where the frequency fT is higher than the frequency fR are depicted inFIGS. 3B and 3C , such as, for example, a wide band-reject filter with a frequency response ofFIG. 3B and a narrow band-reject filter with a frequency response ofFIG. 3C . The person skilled in the art can find other types of filter whose frequency responses attenuate signals within a region of the receive band (310) and pass signals within a region of the transmit band (320), such as, for example, a pass-band filter (e.g.FIG. 4B ) passing a band comprising the transmit band (320) and stopping (e.g. attenuating) a region comprising the receive band (310). Therefore, the exemplary filter embodiments depicted inFIGS. 3A-3C should not be considered as limiting the scope of the teachings according to the present disclosure, but rather as exemplary embodiments of the inventive concept provided by those teachings. - Similar to
FIGS. 3A-3C discussed in the prior section,FIGS. 4A-4C show a frequency map comprising a frequency content of the receive band (410) centered around the receive band center frequency fR, and a frequency content of the transmit band (420) centered around the transmit band center frequency fT, for the case where the frequency fT is lower than the frequency fT. Superimposed with the described frequency map.FIGS. 4A-4C also contain a frequency response (450 a-450 c) of the filter (270) ofFIG. 2 which is described in the previous sections of the present disclosure. According to the various embodiments of the present disclosure and as depicted byFIGS. 4A-4C , the filter (270) can have a variety of frequency responses such as to satisfy its design requirements, which is to attenuate the receive band and to pass the transmit band, such as, for example, a low-pass filter, a band-pass filter and a notch-filter whose frequency responses are represented inFIGS. 4A-4C by items (450 a-450 c) respectively. Realization of such filters represented by their frequency responses inFIGS. 3A-3C andFIGS. 4A-4C , using, for example, RLC networks or SAW/BAW, is beyond the scope of this disclosure and well within the ability of the person skilled in the art. Some example realizations of such filters are described, for example, in the referenced U.S. application Ser. No. ______ entitled “Integrated Tunable Filter Architecture” (Attorney Docket No. PER-115-PAP) filed on even date herewith and incorporated herein by reference in its entirety. - As previously mentioned, a transmit/receive RF signal can be in correspondence of a frequency band associated to a wireless standard (e.g. mode), and in turn, the frequency band can comprise a plurality of channels which can be used to transmit/receive an RF signal according the defined modulation scheme of the wireless standard. As it is known by the person skilled in the art, a same transmit/receive system, such as one depicted in
FIG. 1 andFIG. 2 , can be configured to operate over various modes (e.g. frequency, modulation). Accordingly and pursuant to a further embodiment of the present disclosure, the filter (270) ofFIG. 2 with exemplary frequency response depicted inFIGS. 3A-3C andFIGS. 4A-4C can be a tunable filter (e.g. tunable low-pass filter, tunable high-pass filter, tunable band-reject filter, etc. . . . ), such as to allow tuning of a corresponding frequency response according to the various center frequencies corresponding to various modes of operation of the transmit/receive system (200) ofFIG. 2 , such as to maintain the design goal of passing an attending transmit frequency band (e.g. in correspondence of a transmit channel) while attenuating an attending receive frequency band (e.g. in correspondence of a receive channel). In such configuration, a signal-aware processor (e.g. controller) which knows of a current mode of operation of the system and a corresponding frequency band (e.g. transmit, receive), can control the tunable filter (270) to reject a receive frequency band while passing a transmit frequency band. An example of such signal-aware processor is the transceiver unit (105). As known to the person skilled in the art, such tunable filter (270) can comprise one or more stages (e.g. resistor-inductor-capacitor RLC) interconnected in a series and/or a shunt configuration and coupled and/or connected to the transmit path (e.g. betweendriver 150 and final 160) in a series and/or shunt configuration (series configuration shown inFIG. 2 ). Some examples of such filters connected in a shunt and/or series configuration are provided in the referenced U.S. application Ser. No. ______, entitled “Methods for Increasing RF Throughput Via Usage of Tunable Filters” (Attorney Docket No. PER-099-PAP) and U.S. application Ser. No. ______ entitled “Integrated Tunable Filter Architecture” (Attorney Docket No. PER-115-PAP), both filed on even date herewith and incorporated herein by reference in their entirety. - The system block diagram according to an embodiment of the present disclosure depicted in
FIG. 2 , is a simplistic representation of a single path transmit/receive system used in an RF front-end stage. Such front-end stage can include a plurality of similar transmit/receive paths sharing the same antenna (120), and the same transceiver unit (105). It follows that according to a further embodiments of the present disclosure, a similar filter (270) can be placed in a transmit path of each of the plurality of similar transmit/receive paths such as to reduce transmit channel noise over a corresponding receive frequency band and provide the same benefits as discussed in relation to the single transmit path and single receive path system (200) ofFIG. 2 . - The tunable filters described in the various embodiments according to the present disclosure can be constructed using one or more variable reactive elements, such as variable capacitors and variable inductors. Digitally tunable capacitors (DTC) and/or digitally tunable inductors, as described in, for example. International Application No. PCT/US2009/001358 and U.S. patent application Ser. No. 13/595,893, whose disclosures are incorporated herein by reference in their entirety, can also be used in constructing such tunable filters (e.g. low-pass, high-pass, band-pass, band-reject, notch, etc. . . . ). The person skilled in the art readily knows how to realize such tunable filters and how to select components with values (e.g. ranges of values) consistent with a desired filter characteristics (e.g. to provide a desired frequency response). Tuning of such tunable filter can comprise varying a value of one or more of its variable reactive elements under control of a signal-aware processor as discussed in the prior sections of the present disclosure.
- As previously mentioned, the various exemplary embodiments of the present disclosure are not limited to a transmit path with an amplification stage comprising two amplifiers (150, 160), and transmit/receive systems with amplification stages in their transmit paths comprising more than two amplifiers can also benefit from the teachings of the present disclosure. According to an exemplary embodiment of the present disclosure, more than one, such as two or more, tunable filters (270) can be placed in various inter-stage locations of an amplification stage comprising more than two amplifiers (e.g. stages). Such configuration can allow attenuation of the transmit channel noise over a same frequency band corresponding to a receive signal at various points in the transmit path, with a net effect of reducing overall noise at the output of the transmit path. As the number of amplifier stages increases, amplification of the noise also increases, and therefore an increased number of filters (270) at various points of the transmit path can be desirable.
- According to another embodiment of the present disclosure, the tunable filter (270) can be monolithically integrated with the driver (150) and/or with the final amplifier (160). Monolithic integration of the amplification stage (e.g. comprising driver (150) and final (160)) can be desirable because it provides, for example, matching between devices (e.g. transistors used in the amplifiers) to track and adjust variations due to manufacturing tolerances, temperature and others in ways not possible across multiple integrated circuits, such as, for example, described in the referenced U.S. patent application Ser. No. 13/797,779 and U.S. patent application Ser. No. 13/967,866, whose disclosures are incorporated herein by reference in their entirety. Other benefits of monolithic integration can include better overall performance of the integrated devices due to shorter traces as well as reduced manufacturing cost, assembly cost, testing cost and form factor. It follows that, according to an embodiment of the present disclosure, such monolithically integrated amplification stage (e.g. 150 and 160) can also include the (tunable) filter (270). Furthermore, a duplexer unit (130) comprising RLC filters such as per the relaxed design embodiments provided by the teaching according to the present disclosure, can also be monolithically integrated, entirely or partially, together with other components such as (150), (160) and (270) of the transmit/receive communication system (200) of
FIG. 2 . Latter monolithic integration of the duplexer unit is yet another benefit of not using a SAW/BAW filter in the design of the duplexer unit provided by the present teachings. Although the system diagram ofFIG. 2 only shows a driver (150), a final (160), a filter (270) and a duplexer tilter (130) as part of a transmit path of the system (200), other components may be part of such transmit path, such as, for example, tunable match circuits and/or variable harmonic terminations, which can also partially or entirely be monolithically integrated with the driver (150), the final (160) and the filter (270). Tunable match circuits are described, for example, in the referenced U.S. patent application Ser. No. 13/967,866 and U.S. patent application Ser. No. 14/042,312, and variable harmonic terminations are described, for example, in the U.S. patent application Ser. No. 13/797,686, whose disclosures are incorporated herein by reference in their entirety. - The examples set forth above are provided to give those of ordinary skill in the art a complete disclosure and description of how to make and use the embodiments of the present disclosure, and are not intended to limit the scope of what the inventors regard as their disclosure. Modifications of the above described modes for carrying out the disclosure may be used by persons of skill in the art, and are intended to be within the scope of the following claims. All patents and publications mentioned in the specification may be indicative of the levels of skill of those skilled in the art to which the disclosure pertains. All references cited in this disclosure are incorporated by reference to the same extent as if each reference had been incorporated by reference in its entirety individually.
- It is to be understood that the disclosure is not limited to particular methods or systems, which can, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. As used in this specification and the appended claims, the singular forms “a”. “an”, and “the” include plural referents unless the content clearly dictates otherwise. The term “plurality” includes two or more referents unless the content clearly dictates otherwise. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosure pertains.
- A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the present disclosure. Accordingly, other embodiments are within the scope of the following claims.
Claims (39)
1. A radio frequency (RF) circuital arrangement comprising:
an RF transmit path comprising:
a plurality of cascaded amplifiers configured, during operation of the circuital arrangement, to amplify a transmit RF signal, the transmit RF signal operating over a first frequency band, and
a first filter placed between two consecutive amplifiers of the plurality of cascaded amplifiers, the first filter configured during operation of the circuital arrangement, to attenuate a second frequency band different from the first frequency band, and pass the first frequency band:
an RF receive path configured, during operation of the circuital arrangement, to receive a receive RF signal over the second frequency band, and
a bi-directional transmit/receive circuit connected to the RF transmit path and to the RF receive path, the bi-directional transmit/receive circuit comprising:
a second filter configured, during operation of the circuital arrangement, to pass the first frequency band and to attenuate the second frequency band.
2. The RF circuital arrangement of claim 1 , wherein:
an attenuation over the first frequency band provided by the first filter is less than about 5 dB, and
an attenuation over the second frequency band provided by the first filter is greater than about 10 dB.
3. The RF circuital arrangement of claim 1 or claim 2 , wherein an attenuation over the second frequency band provided by the combination of the first filter and the second filter is greater than about 35 dB.
4. The RF circuital arrangement of claim 1 , wherein, during operation of the circuital arrangement, the hi-directional transmit/receive circuit is configured:
to provide an amplified version of the transmit RF signal from the RF transmit path to a transmit/receive antenna, and
to receive the receive RF signal from the transmit/receive antenna and provide said signal to the RF receive path.
5. The RF circuital arrangement of claim 1 , wherein the first frequency band and the second frequency band are in correspondence of a mode of operation of the circuital arrangement, and wherein the circuital arrangement is configured, during operation of the circuital arrangement, to operate in one of a plurality of modes of operation comprising a plurality of different first frequency band and second frequency band.
6. The RF circuital arrangement of claim 5 , wherein the first filter is a tunable tilter configured, during operation of the circuital arrangement, to be tuned to attenuate a second frequency band and pass a first frequency band in correspondence of a mode of operation of the plurality of modes of operation of the circuital arrangement.
7. The RF circuital arrangement of claim 6 , wherein the first filter and the second filter are RLC type filters.
8. The RF circuital arrangement of claim 6 , wherein the first tilter is an RLC type filter.
9. The RF circuital arrangement of claim 3 , wherein the first filter and the second filter are RLC type filters.
10. The RF circuital arrangement of claim 1 , wherein the first filter comprises one or more of: a) a digitally tunable capacitor, and b) a digitally tunable inductor.
11. The RF circuital arrangement of claim 7 , wherein the first filter comprises one or more of: a) a digitally tunable capacitor, and b) a digitally tunable inductor.
12. The RF circuital arrangement of claim 7 , wherein the first filter is one of: a) a low-pass filter, b) a high-pass filter, c) a band-pass filter, d) a band-stop filter, and e) a notch filter.
13. The RF circuital arrangement of claim 1 , wherein the first filter is one of: a) a low-pass filter, b) a high-pass filter, c) a band-pass filter, d) a band-stop filter, and e) a notch filter.
14. The RF circuital arrangement of any one of claims 1 , 2 , or 7, wherein the bi-directional transmit/receive circuit is a duplexer circuit comprising the second filter, and wherein the second filter is designed with relaxed parameters, wherein the relaxed parameters reduce a number of filter stages of the second filter.
15. The RF circuital arrangement of claim 14 , wherein the reduced number of filter stages of the second filter provide a reduced attenuation of the second filter in the first frequency band.
16. The RF circuital arrangement of claim 15 , wherein the reduced attenuation of the second filter in the first frequency band is less than about 2 dB.
17. The RF circuital arrangement of claim 14 , wherein the duplexer circuit further comprises a third filter coupled to the receive path and configured, during operation of the circuital arrangement, to pass the second frequency band.
18. The RF circuital arrangement of claim 1 , wherein the plurality of cascaded amplifiers and the first filter are monolithically integrated.
19. The RF circuital arrangement of claim 7 , wherein the plurality of cascaded amplifiers and the first and/or second filter are monolithically integrated.
20. The circuital arrangement of claim 9 , wherein the plurality of cascaded amplifiers and the first and/or second filter are monolithically integrated.
21. The RF circuital arrangement of claim 1 , wherein the plurality of cascaded amplifiers comprises a first amplifier configured to receive the RF transmit signal into the plurality of cascaded amplifiers, and a last amplifier configured to output an amplified version of the RF transmit signal by the plurality of cascaded amplifiers, and wherein the first filter is configured to attenuate an amplified noise figure at the second frequency band.
22. The RF circuital arrangement of claim 1 , further comprising one or more filters similar to the first filter, the one or more filters placed between one or more two consecutive amplifiers of the plurality of amplifiers, the one or more filters and the first filter not being directly connected, wherein the one or more filters are configured during operation of the circuital arrangement, to attenuate the second frequency band and pass the first frequency band.
23. The RF circuital arrangement of claim 1 , wherein the plurality of cascaded amplifiers comprises a driver amplifier and a final amplifier, and wherein the first filter is placed between the driver amplifier and the final amplifier.
24. A communication device for bi-directional transmit and receive of RF signals, the communication device comprising the RF circuital arrangement of claim 6 .
25. The communication device of claim 24 further comprising a transceiver unit, wherein during operation of the communication device, the transceiver unit is adapted to tune the tunable filter according to the mode of operation.
26. A method for reducing loss of a transmit RF signal in a duplexer unit of an radio frequency (RF) transmit/receive system, the method comprising:
providing an RF transmit path comprising a plurality of cascaded amplifiers;
inserting, in-between two amplifiers of the plurality of cascaded amplifiers, a first filter;
based on the inserting, attenuating a receive frequency band and passing a transmit frequency band:
based on the attenuating, relaxing design parameters of a second filter of a duplexer unit, the second filter being configured to pass the transmit frequency band and to attenuate the receive frequency band;
based on the relaxing, reducing a number of filter stages of the second filter, and
based on the reducing, reducing an attenuation at the transmit frequency band through the second filter of the duplexer unit.
27. The method of claim 26 , wherein the plurality of cascaded amplifiers comprises two amplifiers; a driver amplifier and a final amplifier, and wherein the first filter is inserted between the driver amplifier and the final amplifier.
28. The method of claim 0 or claim 27 , further comprising:
coupling the second filter of the duplexer unit at an output of the plurality of cascaded amplifiers of the RF transmit path;
based on the coupling, isolating an RF receive path operating at the receive frequency band from a signal at the output of the plurality of cascaded amplifiers, the RF receive path being coupled to a third filter of the duplexer unit, and
based on the coupling, reducing an attenuation of a transmit RF signal via the RF transmit path.
29. The method of claim 28 , wherein the duplexer unit is coupled to a transmit/receive antenna, and wherein the duplexer unit is configured to receive an RF signal at the receive frequency hand and feed said RF signal to the RF receive path.
30. The method of claim 28 , wherein the third filter is configured to pass the receive frequency band and to attenuate the transmit frequency band.
31. The method of claim 26 , wherein the first filter is a tunable filter.
32. The method of claim 31 , further comprising:
selecting a different receive frequency band and transmit frequency band, and
based on the selecting, tuning the first filter to attenuate the different receive frequency band and pass the different transmit frequency band,
wherein the second filter is configured to pass the different transmit frequency band and attenuate the different receive frequency band.
33. The method of claim 32 , wherein the selecting is in correspondence of a desired mode and/or channel of operation from a plurality of modes and/or channels of operation of the RF transmit/receive system, and wherein the second filter is configured to pass a plurality of transmit frequency hands and attenuate a plurality of receive frequency bands in correspondence of the plurality of modes and/or channels of operation of the RF transmit/receive system.
34. The method of claim 32 , wherein the tuning is performed by a controller unit aware of the different receive and transmit frequency bands.
35. The method of claim 34 , wherein the selecting and the tuning is performed by a transceiver unit of the RF transmit/receive system.
36. The RF circuital arrangement of claim 26 , wherein the second filter is an RLC type filter.
37. The RF circuital arrangement of claim 26 , wherein the first and the second filter are RLC type filters.
38. The RF circuital arrangement of claim 31 , wherein the first filter comprises one or more of: a) a digitally tunable capacitor, and b) a digitally tunable inductor.
39. The RF circuital arrangement of claim 37 , wherein the first filter is one of: a) a low-pass filter, b) a high-pass filter, c) a band-pass filter, d) a band-stop filter, and e) a notch filter.
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US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
US9864000B2 (en) * | 2013-09-30 | 2018-01-09 | Peregrine Semiconductor Corporation | Mismatch detection using replica circuit |
KR102301680B1 (en) * | 2014-07-16 | 2021-09-14 | 삼성전자주식회사 | Diversity Amp Module and Apparatus comprising the same |
US10483641B2 (en) * | 2014-09-30 | 2019-11-19 | Skyworks Solutions, Inc. | Antenna switch modules and methods of making the same |
US9548786B2 (en) * | 2014-10-31 | 2017-01-17 | Skyworks Solutions, Inc. | Dynamic switch controller |
US10050694B2 (en) * | 2014-10-31 | 2018-08-14 | Skyworks Solution, Inc. | Diversity receiver front end system with post-amplifier filters |
US9385765B2 (en) | 2014-10-31 | 2016-07-05 | Skyworks Solutions, Inc. | Diversity receiver front end system with phase-shifting components |
US9893752B2 (en) | 2014-10-31 | 2018-02-13 | Skyworks Solutions, Inc. | Diversity receiver front end system with variable-gain amplifiers |
US9825660B2 (en) * | 2014-10-31 | 2017-11-21 | Skyworks Solutions, Inc. | Systems, devices and methods related to diversity receivers |
US9813137B2 (en) * | 2014-10-31 | 2017-11-07 | Skyworks Solutions, Inc. | Diversity receiver front end system with flexible routing |
US10298186B2 (en) * | 2014-11-03 | 2019-05-21 | Qorvo Us, Inc. | Diversity receive modules using one or more shared tunable notch filters for transmit blocker rejection |
US20160134566A1 (en) * | 2014-11-06 | 2016-05-12 | Entropic Communications, Inc. | Multi-band transceiver front-end architecture with reduced switch insertion loss |
US9363794B1 (en) * | 2014-12-15 | 2016-06-07 | Motorola Solutions, Inc. | Hybrid antenna for portable radio communication devices |
US10009054B2 (en) | 2015-05-28 | 2018-06-26 | Skyworks Solutions, Inc. | Impedance matching integrous signal combiner |
GB2562823A (en) * | 2015-06-01 | 2018-11-28 | Skyworks Solutions Inc | Systems, devices and methods related to diversity receivers |
KR101994799B1 (en) * | 2015-06-03 | 2019-07-01 | 가부시키가이샤 무라타 세이사쿠쇼 | High frequency front end circuit |
US9973173B2 (en) | 2015-06-30 | 2018-05-15 | Qorvo Us, Inc. | Switch topology for switching filters multiplexers |
US9705203B2 (en) * | 2015-08-12 | 2017-07-11 | Qorvo Us, Inc. | Radio frequency front end architecture with a switch topology for routing filter circuits while substantially reducing variations in the reactive loading at common ports |
US20170093032A1 (en) * | 2015-09-29 | 2017-03-30 | Silicon Laboratories Inc. | Radio-Frequency Apparatus With Integrated Antenna Control and Associated Methods |
US9721652B2 (en) * | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
KR102556605B1 (en) * | 2015-12-07 | 2023-07-17 | 가부시키가이샤 와이솔재팬 | Duplexer device |
JP2017163197A (en) * | 2016-03-07 | 2017-09-14 | パナソニック株式会社 | Power amplifier circuit |
US10578708B2 (en) * | 2016-04-08 | 2020-03-03 | Raytheon Company | Switchable transmit/receive (T/R) module |
US10181820B2 (en) * | 2016-05-17 | 2019-01-15 | Skyworks Solutions, Inc. | Power amplification system with envelope-based bias |
US9991973B2 (en) * | 2016-06-28 | 2018-06-05 | Psemi Corporation | Integrated circuit calibration architecture |
US10128963B2 (en) | 2016-06-28 | 2018-11-13 | Psemi Corporation | Integrated circuit calibration architecture |
JP6882481B2 (en) | 2016-08-29 | 2021-06-02 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | Reconfigurable multiplexers, front-end architectures and wireless devices |
US9882531B1 (en) | 2016-09-16 | 2018-01-30 | Peregrine Semiconductor Corporation | Body tie optimization for stacked transistor amplifier |
US9837965B1 (en) * | 2016-09-16 | 2017-12-05 | Peregrine Semiconductor Corporation | Standby voltage condition for fast RF amplifier bias recovery |
US9843293B1 (en) | 2016-09-16 | 2017-12-12 | Peregrine Semiconductor Corporation | Gate drivers for stacked transistor amplifiers |
US10250199B2 (en) | 2016-09-16 | 2019-04-02 | Psemi Corporation | Cascode amplifier bias circuits |
US10397811B2 (en) * | 2016-10-14 | 2019-08-27 | At&T Intellectual Property I, L.P. | Wireless channel sounder with fast measurement speed and wide dynamic range |
TWI652913B (en) * | 2016-10-28 | 2019-03-01 | 絡達科技股份有限公司 | Multi-mode multi-band transceiver, radio frequency front-end circuit and radio frequency system using the same |
WO2018084889A1 (en) | 2016-11-02 | 2018-05-11 | Peregrine Semiconductor Corporation | Mismatch detection using replica circuit |
US10056874B1 (en) | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
US10305433B2 (en) | 2017-02-28 | 2019-05-28 | Psemi Corporation | Power amplifier self-heating compensation circuit |
US10439563B2 (en) | 2017-02-28 | 2019-10-08 | Psemi Corporation | Positive temperature coefficient bias compensation circuit |
US10439562B2 (en) | 2017-02-28 | 2019-10-08 | Psemi Corporation | Current mirror bias compensation circuit |
CN110392926B (en) * | 2017-03-14 | 2022-12-06 | 株式会社村田制作所 | High frequency module |
US10038418B1 (en) * | 2017-04-04 | 2018-07-31 | Psemi Corporation | Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass |
US11881828B2 (en) | 2017-04-04 | 2024-01-23 | Psemi Corporation | Tunable effective inductance for multi-gain LNA with inductive source degeneration |
US10276371B2 (en) | 2017-05-19 | 2019-04-30 | Psemi Corporation | Managed substrate effects for stabilized SOI FETs |
US10672726B2 (en) | 2017-05-19 | 2020-06-02 | Psemi Corporation | Transient stabilized SOI FETs |
US10355729B2 (en) | 2017-06-09 | 2019-07-16 | Qualcomm Incorporated | Single receiver intra-band non-contiguous carrier aggregation |
US10772052B2 (en) * | 2017-06-16 | 2020-09-08 | Qualcomm Incorporated | Controlling coexistent radio systems in a wireless device |
US10361745B2 (en) * | 2017-06-28 | 2019-07-23 | Qualcomm Incorporated | Systems and methods for reducing transmit and receive power via a T/R switch |
US10305453B2 (en) * | 2017-09-11 | 2019-05-28 | Apple Inc. | Electronic device antennas having multiple operating modes |
US10263566B1 (en) * | 2017-09-28 | 2019-04-16 | Raytheon Company | Radio frequency power amplifier |
CN111316567B (en) * | 2017-11-23 | 2022-03-18 | 苹果公司 | Apparatus and method for wireless communication |
KR102465833B1 (en) | 2017-11-28 | 2022-11-11 | 삼성전자주식회사 | A method for configuring power in a wireless communication system and an electronic device thereof |
US10236836B1 (en) | 2017-12-01 | 2019-03-19 | Psemi Corporation | Tuned amplifier matching based on band switch setting |
WO2019131077A1 (en) * | 2017-12-25 | 2019-07-04 | 株式会社村田製作所 | Switch module and communication device |
US10381991B1 (en) * | 2018-02-02 | 2019-08-13 | Psemi Corporation | Drain sharing split LNA |
US10965021B2 (en) * | 2018-03-05 | 2021-03-30 | Skyworks Solutions, Inc. | Radio frequency systems with tunable filter |
US10659086B2 (en) * | 2018-06-13 | 2020-05-19 | Qorvo Us, Inc. | Multi-mode radio frequency circuit |
US10658386B2 (en) | 2018-07-19 | 2020-05-19 | Psemi Corporation | Thermal extraction of single layer transfer integrated circuits |
US10720954B2 (en) | 2018-11-20 | 2020-07-21 | Honeywell International Inc. | System and method to share single antenna between two L-band receiver/transmitters |
KR20210124982A (en) * | 2019-01-10 | 2021-10-15 | 스카이워크스 솔루션즈, 인코포레이티드 | Apparatus and methods for biasing power amplifiers |
US11082021B2 (en) | 2019-03-06 | 2021-08-03 | Skyworks Solutions, Inc. | Advanced gain shaping for envelope tracking power amplifiers |
JP2021044654A (en) * | 2019-09-10 | 2021-03-18 | 株式会社村田製作所 | High-frequency circuit and communication device |
WO2021061851A1 (en) | 2019-09-27 | 2021-04-01 | Skyworks Solutions, Inc. | Power amplifier bias modulation for low bandwidth envelope tracking |
JP2021087035A (en) * | 2019-11-25 | 2021-06-03 | 株式会社村田製作所 | High-frequency signal transmission and reception circuit |
US20210175855A1 (en) * | 2019-12-06 | 2021-06-10 | Silicon Laboratories Inc. | System and method of mitigating interference caused by coupling from power amplifier to voltage-controlled oscillator |
US11799502B2 (en) * | 2020-01-09 | 2023-10-24 | Skyworks Solutions, Inc. | Mobile device front end architecture for multiple frequency bands |
JP2021158554A (en) * | 2020-03-27 | 2021-10-07 | 株式会社村田製作所 | High-frequency module and communication device |
JP2021158556A (en) * | 2020-03-27 | 2021-10-07 | 株式会社村田製作所 | High-frequency module and communication device |
US11184039B1 (en) * | 2020-05-22 | 2021-11-23 | Qualcomm Incorporated | Method of combining LTE-UHB+LAA+sub6-5G LNA ports |
US11855595B2 (en) | 2020-06-05 | 2023-12-26 | Skyworks Solutions, Inc. | Composite cascode power amplifiers for envelope tracking applications |
US11482975B2 (en) * | 2020-06-05 | 2022-10-25 | Skyworks Solutions, Inc. | Power amplifiers with adaptive bias for envelope tracking applications |
JP2021197647A (en) * | 2020-06-16 | 2021-12-27 | 株式会社村田製作所 | Power amplifier module |
US11611338B2 (en) * | 2020-09-25 | 2023-03-21 | Apple Inc. | Transistor aging reversal using hot carrier injection |
US11831279B2 (en) * | 2021-04-12 | 2023-11-28 | Infineon Technologies Ag | Millimeter-wave power amplifier |
IT202100013181A1 (en) * | 2021-05-20 | 2022-11-20 | St Microelectronics Srl | PROCESS OF COLLECTING SIGNALS DETECTED FROM DETECTION TRANSISTORS, CORRESPONDING SENSOR DEVICE AND IMAGING CAMERA |
US20230142322A1 (en) * | 2021-11-10 | 2023-05-11 | Psemi Corporation | Variable width for rf neighboring stacks |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070082617A1 (en) * | 2005-10-11 | 2007-04-12 | Crestcom, Inc. | Transceiver with isolation-filter compensation and method therefor |
US20130244591A1 (en) * | 2012-03-19 | 2013-09-19 | Qualcomm Incorporated | Limited q factor tunable front end using tunable circuits and microelectromechanical system (mems) |
US8682260B1 (en) * | 2008-10-28 | 2014-03-25 | Rf Micro Devices, Inc. | Power amplifier with tunable bandpass and notch filter |
Family Cites Families (531)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3699451A (en) * | 1967-11-11 | 1972-10-17 | Tamaki Ohaski | Antenna selection and impedance matching apparatus |
US3470443A (en) | 1967-12-07 | 1969-09-30 | Nasa | Positive dc to negative dc converter |
US3654537A (en) | 1970-04-29 | 1972-04-04 | Westinghouse Electric Corp | High efficiency power supply for charging capacitors in steps |
US3646361A (en) | 1970-10-16 | 1972-02-29 | Hughes Aircraft Co | High-speed sample and hold signal level comparator |
US3699359A (en) | 1971-04-20 | 1972-10-17 | Philco Ford Corp | Electronic latching device |
US3731112A (en) | 1971-12-15 | 1973-05-01 | A Smith | Regulated power supply with diode capacitor matrix |
US3943428A (en) | 1973-11-23 | 1976-03-09 | General Electric Company | DC to DC Voltage converter |
US3942047A (en) | 1974-06-03 | 1976-03-02 | Motorola, Inc. | MOS DC Voltage booster circuit |
US3988727A (en) | 1974-06-24 | 1976-10-26 | P. R. Mallory & Co., Inc. | Timed switching circuit |
US3955353A (en) | 1974-07-10 | 1976-05-11 | Optel Corporation | Direct current power converters employing digital techniques used in electronic timekeeping apparatus |
US3975671A (en) | 1975-02-24 | 1976-08-17 | Intel Corporation | Capacitive voltage converter employing CMOS switches |
CH593510B5 (en) | 1975-08-14 | 1977-12-15 | Ebauches Sa | |
JPS5855685B2 (en) | 1975-09-03 | 1983-12-10 | 株式会社日立製作所 | Zoufuku Cairo |
US4053916A (en) | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
IT1073440B (en) | 1975-09-22 | 1985-04-17 | Seiko Instr & Electronics | VOLTAGE LIFT CIRCUIT MADE IN MOS-FET |
US4047091A (en) | 1976-07-21 | 1977-09-06 | National Semiconductor Corporation | Capacitive voltage multiplier |
US4079336A (en) | 1976-12-22 | 1978-03-14 | National Semiconductor Corporation | Stacked transistor output amplifier |
US4106086A (en) | 1976-12-29 | 1978-08-08 | Rca Corporation | Voltage multiplier circuit |
JPS5393350A (en) | 1977-01-27 | 1978-08-16 | Canon Inc | Booster circuit |
US4145719A (en) | 1977-09-28 | 1979-03-20 | Gte Sylvania Incorporated | Multi-channel video switch using dual-gate MOS-FETS |
US4139826A (en) | 1977-12-27 | 1979-02-13 | Rca Corporation | Crystal overtone oscillator using cascade connected transistors |
JPS54152845A (en) | 1978-05-24 | 1979-12-01 | Hitachi Ltd | High dielectric strength mosfet circuit |
JPS5574168A (en) | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
DE2851789C2 (en) | 1978-11-30 | 1981-10-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Circuit for switching and transmitting alternating voltages |
US4256977A (en) | 1978-12-26 | 1981-03-17 | Honeywell Inc. | Alternating polarity power supply control apparatus |
US4241316A (en) | 1979-01-18 | 1980-12-23 | Lawrence Kavanau | Field effect transconductance amplifiers |
JPS6033314B2 (en) | 1979-11-22 | 1985-08-02 | 富士通株式会社 | Substrate bias voltage generation circuit |
US4367421A (en) | 1980-04-21 | 1983-01-04 | Reliance Electric Company | Biasing methods and circuits for series connected transistor switches |
US4321661A (en) | 1980-12-23 | 1982-03-23 | Gte Laboratories Incorporated | Apparatus for charging a capacitor |
US4739191A (en) | 1981-04-27 | 1988-04-19 | Signetics Corporation | Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage |
US4460952A (en) | 1982-05-13 | 1984-07-17 | Texas Instruments Incorporated | Electronic rectifier/multiplier/level shifter |
US4485433A (en) | 1982-12-22 | 1984-11-27 | Ncr Corporation | Integrated circuit dual polarity high voltage multiplier for extended operating temperature range |
DE3371961D1 (en) | 1983-05-27 | 1987-07-09 | Itt Ind Gmbh Deutsche | Mos push-pull bootstrap driver |
JPS6066504A (en) | 1983-09-22 | 1985-04-16 | Oki Electric Ind Co Ltd | Bias generating circuit |
JPS6148197A (en) | 1984-08-13 | 1986-03-08 | Fujitsu Ltd | Charge-up circuit |
US4748485A (en) | 1985-03-21 | 1988-05-31 | Hughes Aircraft Company | Opposed dual-gate hybrid structure for three-dimensional integrated circuits |
US4621315A (en) | 1985-09-03 | 1986-11-04 | Motorola, Inc. | Recirculating MOS charge pump |
US4777577A (en) | 1985-10-01 | 1988-10-11 | Maxim Integrated Products, Inc. | Integrated dual charge pump power supply and RS-232 transmitter/receiver |
US4679134A (en) | 1985-10-01 | 1987-07-07 | Maxim Integrated Products, Inc. | Integrated dual charge pump power supply and RS-232 transmitter/receiver |
US4897774A (en) | 1985-10-01 | 1990-01-30 | Maxim Integrated Products | Integrated dual charge pump power supply and RS-232 transmitter/receiver |
JPS62104173A (en) | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | Semiconductor device |
JPH0434980Y2 (en) | 1986-06-30 | 1992-08-19 | ||
US4769784A (en) | 1986-08-19 | 1988-09-06 | Advanced Micro Devices, Inc. | Capacitor-plate bias generator for CMOS DRAM memories |
US4736169A (en) | 1986-09-29 | 1988-04-05 | Hughes Aircraft Company | Voltage controlled oscillator with frequency sensitivity control |
JPS63238716A (en) | 1986-11-14 | 1988-10-04 | Nec Corp | Switching circuit |
US4752699A (en) | 1986-12-19 | 1988-06-21 | International Business Machines Corp. | On chip multiple voltage generation using a charge pump and plural feedback sense circuits |
US4825145A (en) | 1987-01-14 | 1989-04-25 | Hitachi, Ltd. | Constant current circuit |
JPS63290159A (en) | 1987-05-20 | 1988-11-28 | Matsushita Electric Ind Co Ltd | Booster circuit |
US4746960A (en) | 1987-07-27 | 1988-05-24 | General Motors Corporation | Vertical depletion-mode j-MOSFET |
US5081706A (en) | 1987-07-30 | 1992-01-14 | Texas Instruments Incorporated | Broadband merged switch |
US4847519A (en) | 1987-10-14 | 1989-07-11 | Vtc Incorporated | Integrated, high speed, zero hold current and delay compensated charge pump |
GB2214017A (en) | 1987-12-22 | 1989-08-23 | Philips Electronic Associated | Ring oscillator |
US4849651A (en) | 1988-02-24 | 1989-07-18 | Hughes Aircraft Company | Two-state, bilateral, single-pole, double-throw, half-bridge power-switching apparatus and power supply means for such electronic power switching apparatus |
JPH01254014A (en) | 1988-04-04 | 1989-10-11 | Toshiba Corp | Power amplifier |
JPH024011A (en) | 1988-06-21 | 1990-01-09 | Nec Corp | Analog switch circuit |
JPH0666443B2 (en) | 1988-07-07 | 1994-08-24 | 株式会社東芝 | Semiconductor memory cell and semiconductor memory |
US4906587A (en) | 1988-07-29 | 1990-03-06 | Texas Instruments Incorporated | Making a silicon-on-insulator transistor with selectable body node to source node connection |
JPH077912B2 (en) | 1988-09-13 | 1995-01-30 | 株式会社東芝 | Boost circuit |
JP2507567B2 (en) | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | MOS field effect transistor formed in semiconductor layer on insulator substrate |
US4929855A (en) | 1988-12-09 | 1990-05-29 | Grumman Corporation | High frequency switching device |
US4939485A (en) | 1988-12-09 | 1990-07-03 | Varian Associates, Inc. | Microwave field effect switch |
US5313083A (en) | 1988-12-16 | 1994-05-17 | Raytheon Company | R.F. switching circuits |
US5001528A (en) | 1989-01-31 | 1991-03-19 | The United States Of America As Represented By The Secretary Of The Air Force | Radiation hardened CMOS on SOI or SOS devices |
JPH02215154A (en) | 1989-02-16 | 1990-08-28 | Toshiba Corp | Voltage control circuit |
US5105164A (en) | 1989-02-28 | 1992-04-14 | At&T Bell Laboratories | High efficiency uhf linear power amplifier |
US4893070A (en) | 1989-02-28 | 1990-01-09 | The United States Of America As Represented By The Secretary Of The Air Force | Domino effect shunt voltage regulator |
US4890077A (en) | 1989-03-28 | 1989-12-26 | Teledyne Mec | FET monolithic microwave integrated circuit variable attenuator |
US5012123A (en) | 1989-03-29 | 1991-04-30 | Hittite Microwave, Inc. | High-power rf switching system |
US4984040A (en) | 1989-06-15 | 1991-01-08 | Xerox Corporation | High voltage thin film transistor with second gate |
JP2879763B2 (en) | 1989-06-27 | 1999-04-05 | ソニー株式会社 | PLL charge pump circuit |
US5107152A (en) | 1989-09-08 | 1992-04-21 | Mia-Com, Inc. | Control component for a three-electrode device |
US5283457A (en) | 1989-10-02 | 1994-02-01 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
US5095348A (en) | 1989-10-02 | 1992-03-10 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
US5032799A (en) | 1989-10-04 | 1991-07-16 | Westinghouse Electric Corp. | Multistage cascode radio frequency amplifier |
US5023494A (en) | 1989-10-20 | 1991-06-11 | Raytheon Company | High isolation passive switch |
US5350957A (en) | 1989-10-20 | 1994-09-27 | Texas Instrument Incorporated | Electronic switch controlled by plural inputs |
US4999585A (en) | 1989-11-06 | 1991-03-12 | Burr-Brown Corporation | Circuit technique for cancelling non-linear capacitor-induced harmonic distortion |
US5038325A (en) | 1990-03-26 | 1991-08-06 | Micron Technology Inc. | High efficiency charge pump circuit |
US5061911A (en) | 1990-04-03 | 1991-10-29 | Motorola, Inc. | Single fault/tolerant MMIC switches |
JP3147395B2 (en) | 1990-05-07 | 2001-03-19 | セイコーエプソン株式会社 | Integrated circuits and electronic equipment |
IT1239781B (en) | 1990-05-08 | 1993-11-15 | Texas Instruments Italia Spa | CIRCUIT AND METHOD TO SELECTIVELY SWITCH NEGATIVE VOLTAGES IN CMOS INTEGRATED CIRCUITS |
US5345422A (en) | 1990-07-31 | 1994-09-06 | Texas Instruments Incorporated | Power up detection circuit |
US5081371A (en) | 1990-11-07 | 1992-01-14 | U.S. Philips Corp. | Integrated charge pump circuit with back bias voltage reduction |
JPH0732335B2 (en) | 1990-11-16 | 1995-04-10 | 日本電信電話株式会社 | High frequency amplifier |
US5041797A (en) | 1990-11-19 | 1991-08-20 | Harris Corporation | Micro-power gain lattice |
US5111375A (en) | 1990-12-20 | 1992-05-05 | Texas Instruments Incorporated | Charge pump |
US5124762A (en) | 1990-12-31 | 1992-06-23 | Honeywell Inc. | Gaas heterostructure metal-insulator-semiconductor integrated circuit technology |
US5061907A (en) | 1991-01-17 | 1991-10-29 | National Semiconductor Corporation | High frequency CMOS VCO with gain constant and duty cycle compensation |
US6064872A (en) | 1991-03-12 | 2000-05-16 | Watkins-Johnson Company | Totem pole mixer having grounded serially connected stacked FET pair |
KR940006998B1 (en) | 1991-05-28 | 1994-08-03 | 삼성전자 주식회사 | Data output driver producing high output gain |
US5126590A (en) | 1991-06-17 | 1992-06-30 | Micron Technology, Inc. | High efficiency charge pump |
US5274343A (en) | 1991-08-06 | 1993-12-28 | Raytheon Company | Plural switch circuits having RF propagation networks and RF terminations |
US5212456A (en) | 1991-09-03 | 1993-05-18 | Allegro Microsystems, Inc. | Wide-dynamic-range amplifier with a charge-pump load and energizing circuit |
CA2077500C (en) | 1991-09-04 | 1996-09-17 | Yukio Yokoyama | Radio transceiver |
US5392186A (en) | 1992-10-19 | 1995-02-21 | Intel Corporation | Providing various electrical protections to a CMOS integrated circuit |
JPH0770245B2 (en) | 1991-11-06 | 1995-07-31 | 株式会社大阪サイレン製作所 | Rotation warning light |
US5392205A (en) | 1991-11-07 | 1995-02-21 | Motorola, Inc. | Regulated charge pump and method therefor |
US5285367A (en) | 1992-02-07 | 1994-02-08 | Power Integrations, Inc. | Linear load circuit to control switching power supplies under minimum load conditions |
US5208557A (en) | 1992-02-18 | 1993-05-04 | Texas Instruments Incorporated | Multiple frequency ring oscillator |
US5182529A (en) | 1992-03-06 | 1993-01-26 | Micron Technology, Inc. | Zero crossing-current ring oscillator for substrate charge pump |
US5272457A (en) | 1992-03-10 | 1993-12-21 | Harris Corporation | High isolation integrated switch circuit |
JPH07106937B2 (en) | 1992-03-16 | 1995-11-15 | 日本碍子株式会社 | β-alumina solid electrolyte |
US5477184A (en) | 1992-04-15 | 1995-12-19 | Sanyo Electric Co., Ltd. | Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal |
US5306954A (en) | 1992-06-04 | 1994-04-26 | Sipex Corporation | Charge pump with symmetrical +V and -V outputs |
US5807772A (en) | 1992-06-09 | 1998-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor device with bottom gate connected to source or drain |
US5317181A (en) | 1992-09-10 | 1994-05-31 | United Technologies Corporation | Alternative body contact for fully-depleted silicon-on-insulator transistors |
FR2696598B1 (en) | 1992-10-01 | 1994-11-04 | Sgs Thomson Microelectronics | Charge pump type voltage booster circuit with bootstrap oscillator. |
US5530722A (en) | 1992-10-27 | 1996-06-25 | Ericsson Ge Mobile Communications Inc. | Quadrature modulator with integrated distributed RC filters |
JPH06152334A (en) | 1992-11-06 | 1994-05-31 | Mitsubishi Electric Corp | Ring oscillator and constant voltage generating circuit |
JP3321899B2 (en) | 1992-12-04 | 2002-09-09 | 株式会社デンソー | Semiconductor device |
JPH0799251A (en) | 1992-12-10 | 1995-04-11 | Sony Corp | Semiconductor memory cell |
US5335200A (en) | 1993-01-05 | 1994-08-02 | Texas Instruments Incorporated | High voltage negative charge pump with low voltage CMOS transistors |
FR2702317A1 (en) | 1993-03-03 | 1994-09-09 | Philips Composants | Low consumption, low noise charge pump circuit and frequency synthesizer equipped with such a circuit. |
JPH07118666B2 (en) | 1993-04-28 | 1995-12-18 | 日本電気株式会社 | Portable wireless device |
GB9308944D0 (en) | 1993-04-30 | 1993-06-16 | Inmos Ltd | Ring oscillator |
JP3243892B2 (en) | 1993-05-21 | 2002-01-07 | ソニー株式会社 | Signal switch |
US5446367A (en) | 1993-05-25 | 1995-08-29 | Micron Semiconductor, Inc. | Reducing current supplied to an integrated circuit |
KR0132641B1 (en) | 1993-05-25 | 1998-04-16 | 세끼모또 타다히로 | Substrate circuit |
JPH0721790A (en) | 1993-07-05 | 1995-01-24 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
US5416043A (en) | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
US5572040A (en) | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
US5973363A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5863823A (en) | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
US5973382A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
US5930638A (en) | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
US5422586A (en) | 1993-09-10 | 1995-06-06 | Intel Corporation | Apparatus for a two phase bootstrap charge pump |
US5442586A (en) | 1993-09-10 | 1995-08-15 | Intel Corporation | Method and apparatus for controlling the output current provided by a charge pump circuit |
JP3362931B2 (en) | 1993-09-30 | 2003-01-07 | ソニー株式会社 | Attenuator circuit |
US5349306A (en) | 1993-10-25 | 1994-09-20 | Teledyne Monolithic Microwave | Apparatus and method for high performance wide-band power amplifier monolithic microwave integrated circuits |
US5965452A (en) | 1996-07-09 | 1999-10-12 | Nanogen, Inc. | Multiplexed active biologic array |
JP3488730B2 (en) | 1993-11-05 | 2004-01-19 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit device |
KR0169157B1 (en) | 1993-11-29 | 1999-02-01 | 기다오까 다까시 | Semiconductor circuit and mos-dram |
US5493249A (en) | 1993-12-06 | 1996-02-20 | Micron Technology, Inc. | System powered with inter-coupled charge pumps |
US5375257A (en) | 1993-12-06 | 1994-12-20 | Raytheon Company | Microwave switch |
JP3417630B2 (en) | 1993-12-17 | 2003-06-16 | 株式会社日立製作所 | Semiconductor integrated circuit device, flash memory and nonvolatile storage device |
JPH07211916A (en) | 1994-01-19 | 1995-08-11 | Sony Corp | Transistor element and its manufacture |
JP3085073B2 (en) | 1994-01-24 | 2000-09-04 | 富士通株式会社 | Static RAM |
US5452473A (en) | 1994-02-28 | 1995-09-19 | Qualcomm Incorporated | Reverse link, transmit power correction and limitation in a radiotelephone system |
US5553295A (en) | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
US5475335A (en) | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
CN1136529C (en) | 1994-05-31 | 2004-01-28 | 夏普株式会社 | Sampling circuit, signal amplifier, and image display |
US5442327A (en) | 1994-06-21 | 1995-08-15 | Motorola, Inc. | MMIC tunable biphase modulator |
EP0690510B1 (en) | 1994-06-28 | 1998-05-06 | Nippon Telegraph And Telephone Corporation | Low voltage SOI (silicon on insulator) logic circuit |
US5405795A (en) | 1994-06-29 | 1995-04-11 | International Business Machines Corporation | Method of forming a SOI transistor having a self-aligned body contact |
US5677649A (en) | 1994-08-17 | 1997-10-14 | Micron Technology, Inc. | Frequency-variable oscillator controlled high efficiency charge pump |
JP3169775B2 (en) | 1994-08-29 | 2001-05-28 | 株式会社日立製作所 | Semiconductor circuit, switch and communication device using the same |
EP0700169B1 (en) | 1994-08-30 | 2003-03-12 | Matsushita Electric Industrial Co., Ltd. | Transmit-receive switch circuit for radiocommunication apparatus |
US5559368A (en) | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
JPH08148949A (en) | 1994-11-18 | 1996-06-07 | Fujitsu Ltd | High frequency amplifier |
US5630223A (en) * | 1994-12-07 | 1997-05-13 | American Nucleonics Corporation | Adaptive method and apparatus for eliminating interference between radio transceivers |
US5903178A (en) | 1994-12-16 | 1999-05-11 | Matsushita Electronics Corporation | Semiconductor integrated circuit |
JPH08204530A (en) | 1995-01-23 | 1996-08-09 | Sony Corp | Switch circuit |
JPH08204528A (en) | 1995-01-23 | 1996-08-09 | Sony Corp | Switch circuit and composite switch circuit |
JP3175521B2 (en) | 1995-01-27 | 2001-06-11 | 日本電気株式会社 | Silicon-on-insulator semiconductor device and bias voltage generation circuit |
US5670907A (en) | 1995-03-14 | 1997-09-23 | Lattice Semiconductor Corporation | VBB reference for pumped substrates |
JP3085130B2 (en) | 1995-03-22 | 2000-09-04 | 日本電気株式会社 | Driver circuit |
US5672992A (en) | 1995-04-11 | 1997-09-30 | International Rectifier Corporation | Charge pump circuit for high side switch |
EP0739097B1 (en) | 1995-04-21 | 2004-04-07 | Nippon Telegraph And Telephone Corporation | MOSFET circuit and CMOS logic circuit using the same |
JP3441236B2 (en) | 1995-04-24 | 2003-08-25 | ソニー株式会社 | Semiconductor integrated circuit device |
EP1355420A2 (en) | 1995-05-16 | 2003-10-22 | Matsushita Electric Industrial Co., Ltd. | Two-frequency band-pass filter, two-frequency branching filter and combiner |
US5889428A (en) | 1995-06-06 | 1999-03-30 | Ramtron International Corporation | Low loss, regulated charge pump with integrated ferroelectric capacitors |
US5591650A (en) | 1995-06-08 | 1997-01-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a body contacted SOI MOSFET |
JP2770846B2 (en) | 1995-06-16 | 1998-07-02 | 日本電気株式会社 | FET switch circuit |
US5576647A (en) | 1995-06-22 | 1996-11-19 | Marvell Technology Group, Ltd. | Charge pump for phase lock loop |
US5694308A (en) | 1995-07-03 | 1997-12-02 | Motorola, Inc. | Method and apparatus for regulated low voltage charge pump |
JPH0927736A (en) | 1995-07-13 | 1997-01-28 | Japan Radio Co Ltd | Fet switch |
US5519360A (en) | 1995-07-24 | 1996-05-21 | Micron Technology, Inc. | Ring oscillator enable circuit with immediate shutdown |
JP3332194B2 (en) | 1995-08-10 | 2002-10-07 | ソニー株式会社 | Switch semiconductor integrated circuit and communication terminal device |
JP3568644B2 (en) | 1995-09-01 | 2004-09-22 | シャープ株式会社 | Liquid crystal display device and driving method thereof |
JP3249393B2 (en) | 1995-09-28 | 2002-01-21 | 株式会社東芝 | Switch circuit |
US5698877A (en) | 1995-10-31 | 1997-12-16 | Gonzalez; Fernando | Charge-pumping to increase electron collection efficiency |
US5793246A (en) | 1995-11-08 | 1998-08-11 | Altera Corporation | High voltage pump scheme incorporating an overlapping clock |
JP3561060B2 (en) | 1995-12-08 | 2004-09-02 | 三菱電機株式会社 | Negative voltage generation circuit |
US5892400A (en) | 1995-12-15 | 1999-04-06 | Anadigics, Inc. | Amplifier using a single polarity power supply and including depletion mode FET and negative voltage generator |
FR2742942B1 (en) | 1995-12-26 | 1998-01-16 | Sgs Thomson Microelectronics | HIGH VOLTAGE SLOT GENERATOR |
JP3031227B2 (en) | 1995-12-27 | 2000-04-10 | 日本電気株式会社 | Semiconductor switch |
US5681761A (en) | 1995-12-28 | 1997-10-28 | Philips Electronics North America Corporation | Microwave power SOI-MOSFET with high conductivity metal gate |
JPH09200021A (en) | 1996-01-22 | 1997-07-31 | Mitsubishi Electric Corp | Integrated circuit |
US5917362A (en) | 1996-01-29 | 1999-06-29 | Sony Corporation | Switching circuit |
US5777530A (en) | 1996-01-31 | 1998-07-07 | Matsushita Electric Industrial Co., Ltd. | Switch attenuator |
JP3759648B2 (en) | 1996-03-04 | 2006-03-29 | 株式会社ルネサステクノロジ | Semiconductor memory device |
US5734291A (en) | 1996-03-11 | 1998-03-31 | Telcom Semiconductor, Inc. | Power saving technique for battery powered devices |
JP3347571B2 (en) | 1996-03-12 | 2002-11-20 | 富士通株式会社 | Radar equipment |
JP3484462B2 (en) | 1996-04-11 | 2004-01-06 | 株式会社ルネサステクノロジ | Method for estimating lifetime of floating SOI-MOSFET |
JP3732884B2 (en) | 1996-04-22 | 2006-01-11 | 株式会社ルネサステクノロジ | Internal power supply voltage generation circuit, internal voltage generation circuit, and semiconductor device |
US5689144A (en) | 1996-05-15 | 1997-11-18 | Siliconix Incorporated | Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance |
US5821575A (en) | 1996-05-20 | 1998-10-13 | Digital Equipment Corporation | Compact self-aligned body contact silicon-on-insulator transistor |
JPH09326642A (en) | 1996-06-06 | 1997-12-16 | Mitsubishi Electric Corp | Integrated circuit device |
JP3082671B2 (en) | 1996-06-26 | 2000-08-28 | 日本電気株式会社 | Transistor element and method of manufacturing the same |
US5767549A (en) | 1996-07-03 | 1998-06-16 | International Business Machines Corporation | SOI CMOS structure |
US5818289A (en) | 1996-07-18 | 1998-10-06 | Micron Technology, Inc. | Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit |
US5874849A (en) | 1996-07-19 | 1999-02-23 | Texas Instruments Incorporated | Low voltage, high current pump for flash memory |
GB2331879B (en) | 1996-08-05 | 2001-03-28 | Mitsubishi Electric Corp | Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage |
JPH1079467A (en) | 1996-09-04 | 1998-03-24 | Mitsubishi Electric Corp | Semiconductor device |
JP3689197B2 (en) | 1996-09-06 | 2005-08-31 | 三菱電機株式会社 | Level shift circuit |
US5874836A (en) | 1996-09-06 | 1999-02-23 | International Business Machines Corporation | High reliability I/O stacked fets |
JPH1093471A (en) | 1996-09-11 | 1998-04-10 | Murata Mfg Co Ltd | Signal changeover switch |
US5774411A (en) | 1996-09-12 | 1998-06-30 | International Business Machines Corporation | Methods to enhance SOI SRAM cell stability |
JPH10150204A (en) | 1996-09-19 | 1998-06-02 | Toshiba Corp | Semiconductor device and its manufacture |
US5818099A (en) | 1996-10-03 | 1998-10-06 | International Business Machines Corporation | MOS high frequency switch circuit using a variable well bias |
JP3195256B2 (en) | 1996-10-24 | 2001-08-06 | 株式会社東芝 | Semiconductor integrated circuit |
US5920233A (en) | 1996-11-18 | 1999-07-06 | Peregrine Semiconductor Corp. | Phase locked loop including a sampling circuit for reducing spurious side bands |
US6188590B1 (en) | 1996-12-18 | 2001-02-13 | Macronix International Co., Ltd. | Regulator system for charge pump circuits |
US5753955A (en) | 1996-12-19 | 1998-05-19 | Honeywell Inc. | MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates |
IT1290168B1 (en) | 1996-12-23 | 1998-10-19 | Consorzio Eagle | NEGATIVE VOLTAGE CHARGE PUMP FOR FLASH EEPROM MEMORIES |
JP3545583B2 (en) | 1996-12-26 | 2004-07-21 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
JPH10201222A (en) | 1996-12-27 | 1998-07-31 | Fujitsu Ltd | Voltage boosting circuit and semiconductor device using the same |
JP3357807B2 (en) | 1997-01-13 | 2002-12-16 | 株式会社東芝 | Receiver and phase shifter |
EP0855788B1 (en) | 1997-01-23 | 2005-06-22 | STMicroelectronics S.r.l. | NMOS negative charge pump |
US5821800A (en) | 1997-02-11 | 1998-10-13 | Advanced Micro Devices, Inc. | High-voltage CMOS level shifter |
JPH10242829A (en) | 1997-02-24 | 1998-09-11 | Sanyo Electric Co Ltd | Switch circuit device |
US5912560A (en) | 1997-02-25 | 1999-06-15 | Waferscale Integration Inc. | Charge pump circuit for voltage boosting in integrated semiconductor circuits |
JP2964975B2 (en) | 1997-02-26 | 1999-10-18 | 日本電気株式会社 | High frequency switch circuit |
JP3378457B2 (en) | 1997-02-26 | 2003-02-17 | 株式会社東芝 | Semiconductor device |
JP3441330B2 (en) | 1997-02-28 | 2003-09-02 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US5818766A (en) | 1997-03-05 | 1998-10-06 | Integrated Silicon Solution Inc. | Drain voltage pump circuit for nonvolatile memory device |
US5883541A (en) | 1997-03-05 | 1999-03-16 | Nec Corporation | High frequency switching circuit |
JP3715066B2 (en) | 1997-03-25 | 2005-11-09 | 三菱電機株式会社 | Current mode logic circuit |
US5920093A (en) | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
US5880620A (en) | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
US6160292A (en) | 1997-04-23 | 2000-12-12 | International Business Machines Corporation | Circuit and methods to improve the operation of SOI devices |
JP3258930B2 (en) | 1997-04-24 | 2002-02-18 | 東芝マイクロエレクトロニクス株式会社 | Transmission gate |
US6155909A (en) | 1997-05-12 | 2000-12-05 | Silicon Genesis Corporation | Controlled cleavage system using pressurized fluid |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
JPH10335901A (en) | 1997-06-04 | 1998-12-18 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor switch |
US5784311A (en) | 1997-06-13 | 1998-07-21 | International Business Machines Corporation | Two-device memory cell on SOI for merged logic and memory applications |
US6218892B1 (en) | 1997-06-20 | 2001-04-17 | Intel Corporation | Differential circuits employing forward body bias |
US6411156B1 (en) | 1997-06-20 | 2002-06-25 | Intel Corporation | Employing transistor body bias in controlling chip parameters |
JPH1126776A (en) | 1997-07-02 | 1999-01-29 | Mitsubishi Electric Corp | Dual gate fet and high frequency circuit using the same |
US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US6122185A (en) | 1997-07-22 | 2000-09-19 | Seiko Instruments R&D Center Inc. | Electronic apparatus |
US6081165A (en) | 1997-07-25 | 2000-06-27 | Texas Instruments Incorporated | Ring oscillator |
US6180496B1 (en) | 1997-08-29 | 2001-01-30 | Silicon Genesis Corporation | In situ plasma wafer bonding method |
JP3144477B2 (en) | 1997-09-01 | 2001-03-12 | 日本電気株式会社 | Switch circuit and semiconductor device |
US6130570A (en) | 1997-09-18 | 2000-10-10 | Samsung Electronics Co., Ltd. | MESFET circuit utilizing only positive power supplies |
JPH1196761A (en) | 1997-09-25 | 1999-04-09 | Oki Micro Design Miyazaki Co Ltd | Semiconductor integrated circuit |
JP3811557B2 (en) | 1997-10-21 | 2006-08-23 | 松下電器産業株式会社 | Multiple frequency band high efficiency linear power amplifier |
JPH11136111A (en) | 1997-10-30 | 1999-05-21 | Sony Corp | High frequency circuit |
JPH11163704A (en) | 1997-11-25 | 1999-06-18 | Sharp Corp | High frequency switch circuit |
JP2978865B2 (en) | 1997-11-28 | 1999-11-15 | 新潟日本電気株式会社 | Image forming device |
JP3657412B2 (en) | 1997-12-01 | 2005-06-08 | 日本電信電話株式会社 | High frequency circuit |
JP3542476B2 (en) | 1997-12-01 | 2004-07-14 | 三菱電機株式会社 | CMOS circuit with SOI structure |
DE19800647C1 (en) | 1998-01-09 | 1999-05-27 | Siemens Ag | SOI HV switch with FET structure |
JP3711193B2 (en) | 1998-01-16 | 2005-10-26 | 三菱電機株式会社 | Transmission / reception switching circuit |
US6020848A (en) | 1998-01-27 | 2000-02-01 | The Boeing Company | Monolithic microwave integrated circuits for use in low-cost dual polarization phased-array antennas |
JPH11214662A (en) | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | Semiconductor device |
US5945879A (en) | 1998-02-05 | 1999-08-31 | The Regents Of The University Of California | Series-connected microwave power amplifiers with voltage feedback and method of operation for the same |
US5969571A (en) | 1998-02-17 | 1999-10-19 | Harris Corporation | Pulse duration amplifier system |
US6215360B1 (en) | 1998-02-23 | 2001-04-10 | Motorola, Inc. | Semiconductor chip for RF transceiver and power output circuit therefor |
US5990580A (en) | 1998-03-05 | 1999-11-23 | The Whitaker Corporation | Single pole double throw switch |
US6365488B1 (en) | 1998-03-05 | 2002-04-02 | Industrial Technology Research Institute | Method of manufacturing SOI wafer with buried layer |
JPH11274804A (en) | 1998-03-19 | 1999-10-08 | Sharp Corp | High frequency switch |
US6137367A (en) | 1998-03-24 | 2000-10-24 | Amcom Communications, Inc. | High power high impedance microwave devices for power applications |
US6239657B1 (en) | 1998-03-27 | 2001-05-29 | Rohde & Schwarz Gmbh & Co. Kg | Method and device for measuring the distortion of a high-frequency power amplifier and method and means for automatically equalizing a high-frequency power amplifier |
KR100259097B1 (en) | 1998-04-02 | 2000-06-15 | 김영환 | Semiconductor device and method for fabricating the same |
US6064253A (en) | 1998-04-20 | 2000-05-16 | Endgate Corporation | Multiple stage self-biasing RF transistor circuit |
JP3534624B2 (en) | 1998-05-01 | 2004-06-07 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
DE59904377D1 (en) | 1998-06-04 | 2003-04-03 | Infineon Technologies Ag | LOGIC GATE |
US6249027B1 (en) | 1998-06-08 | 2001-06-19 | Sun Microsystems, Inc. | Partially depleted SOI device having a dedicated single body bias means |
JPH11355123A (en) | 1998-06-11 | 1999-12-24 | Mitsubishi Electric Corp | Buffer using dynamic threshold value mos transistor |
KR100268887B1 (en) | 1998-06-17 | 2000-10-16 | 김영환 | Charge pump circuit |
US5986518A (en) | 1998-06-30 | 1999-11-16 | Motorola, Inc. | Distributed MMIC active quadrature hybrid and method for providing in-phase and quadrature-phase signals |
JP2000022160A (en) | 1998-07-06 | 2000-01-21 | Hitachi Ltd | Semiconductor integrated circuit and fabrication thereof |
US6218890B1 (en) | 1998-07-14 | 2001-04-17 | Sanyo Electric Co., Ltd. | Switching circuit device and semiconductor device |
JP4360702B2 (en) | 1998-08-07 | 2009-11-11 | 株式会社ルネサステクノロジ | Semiconductor device |
US6387739B1 (en) | 1998-08-07 | 2002-05-14 | International Business Machines Corporation | Method and improved SOI body contact structure for transistors |
JP3280623B2 (en) | 1998-08-11 | 2002-05-13 | 沖電気工業株式会社 | Drive control circuit for charge pump circuit |
DE69925078T2 (en) | 1998-08-29 | 2006-03-09 | International Business Machines Corp. | SOI transistor with a substrate contact and method for its production |
US5959335A (en) | 1998-09-23 | 1999-09-28 | International Business Machines Corporation | Device design for enhanced avalanche SOI CMOS |
US6061267A (en) | 1998-09-28 | 2000-05-09 | Texas Instruments Incorporated | Memory circuits, systems, and methods with cells using back bias to control the threshold voltage of one or more corresponding cell transistors |
US6356536B1 (en) | 1998-09-30 | 2002-03-12 | Ericsson Inc. | Protective and decoupling shunt switch at LNA input for TDMA/TDD transceivers |
US6100564A (en) | 1998-09-30 | 2000-08-08 | International Business Machines Corporation | SOI pass-gate disturb solution |
US6191653B1 (en) | 1998-11-18 | 2001-02-20 | Ericsson Inc. | Circuit and method for linearizing amplitude modulation in a power amplifier |
US6281737B1 (en) | 1998-11-20 | 2001-08-28 | International Business Machines Corporation | Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor |
JP3408762B2 (en) | 1998-12-03 | 2003-05-19 | シャープ株式会社 | Semiconductor device having SOI structure and method of manufacturing the same |
JP2000183353A (en) | 1998-12-14 | 2000-06-30 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JP2000188501A (en) | 1998-12-22 | 2000-07-04 | Mitsubishi Electric Corp | Semiconductor switch |
JP4540146B2 (en) | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP2000208614A (en) | 1999-01-14 | 2000-07-28 | Mitsubishi Electric Corp | Semiconductor device and production thereof |
US6107885A (en) | 1999-01-25 | 2000-08-22 | General Instrument Corporation | Wideband linear GaAsFET ternate cascode amplifier |
US6188247B1 (en) | 1999-01-29 | 2001-02-13 | International Business Machines Corporation | Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements |
JP2000223713A (en) | 1999-02-02 | 2000-08-11 | Oki Electric Ind Co Ltd | Semiconductor element and its manufacture |
US6300796B1 (en) | 1999-02-19 | 2001-10-09 | Zilog, Inc. | High voltage PMOS level shifter |
JP2000277703A (en) | 1999-03-25 | 2000-10-06 | Sanyo Electric Co Ltd | Switch circuit device |
JP2000294786A (en) | 1999-04-05 | 2000-10-20 | Nippon Telegr & Teleph Corp <Ntt> | High-frequency switch |
AUPP964499A0 (en) | 1999-04-08 | 1999-04-29 | Bhp Steel (Jla) Pty Limited | Casting strip |
US6239649B1 (en) | 1999-04-20 | 2001-05-29 | International Business Machines Corporation | Switched body SOI (silicon on insulator) circuits and fabrication method therefor |
US6171965B1 (en) | 1999-04-21 | 2001-01-09 | Silicon Genesis Corporation | Treatment method of cleaved film for the manufacture of substrates |
JP2000311986A (en) | 1999-04-27 | 2000-11-07 | Mitsubishi Electric Corp | Digital high frequency analog hybrid ic chip, ic package and digital high frequency analog hybrid ic |
US6172378B1 (en) | 1999-05-03 | 2001-01-09 | Silicon Wave, Inc. | Integrated circuit varactor having a wide capacitance range |
US6111778A (en) | 1999-05-10 | 2000-08-29 | International Business Machines Corporation | Body contacted dynamic memory |
US6118343A (en) | 1999-05-10 | 2000-09-12 | Tyco Electronics Logistics Ag | Power Amplifier incorporating single drain switch and single negative voltage generator |
US6871059B1 (en) | 1999-06-16 | 2005-03-22 | Skyworks Solutions, Inc. | Passive balun FET mixer |
JP4138158B2 (en) | 1999-06-21 | 2008-08-20 | セイコーエプソン株式会社 | SOI structure MOS field effect transistor and method of manufacturing the same |
US7202734B1 (en) | 1999-07-06 | 2007-04-10 | Frederick Herbert Raab | Electronically tuned power amplifier |
US6320225B1 (en) | 1999-07-13 | 2001-11-20 | International Business Machines Corporation | SOI CMOS body contact through gate, self-aligned to source- drain diffusions |
US6169444B1 (en) | 1999-07-15 | 2001-01-02 | Maxim Integrated Products, Inc. | Pulse frequency operation of regulated charge pumps |
JP3589102B2 (en) | 1999-07-27 | 2004-11-17 | セイコーエプソン株式会社 | SOI structure MOS field effect transistor and method of manufacturing the same |
JP2003506883A (en) | 1999-08-10 | 2003-02-18 | シリコン ジェネシス コーポレイション | Cleavage process for manufacturing multi-layer substrates with low implant dose |
US6396352B1 (en) | 1999-08-27 | 2002-05-28 | Texas Instruments Incorporated | CMOS power amplifier for driving low impedance loads |
JP4207328B2 (en) | 1999-09-14 | 2009-01-14 | ソニー株式会社 | Antenna switching circuit and communication device using the same |
JP3926975B2 (en) | 1999-09-22 | 2007-06-06 | 株式会社東芝 | Stacked MOS transistor protection circuit |
JP2001089448A (en) | 1999-09-24 | 2001-04-03 | Yamanouchi Pharmaceut Co Ltd | Amide derivative |
US6288458B1 (en) | 1999-09-30 | 2001-09-11 | Honeywell International Inc. | Power stealing solid state switch |
JP3587443B2 (en) | 1999-10-19 | 2004-11-10 | 日本電信電話株式会社 | Selection circuit and logic circuit using the same |
US7548726B1 (en) | 1999-10-21 | 2009-06-16 | Broadcom Corporation | Adaptive radio transceiver with a bandpass filter |
KR100343288B1 (en) | 1999-10-25 | 2002-07-15 | 윤종용 | An SOI semiconductor integrated circuit for eliminating floating body effect in SOI MOSFETs and method of fabricating the same |
US6521959B2 (en) | 1999-10-25 | 2003-02-18 | Samsung Electronics Co., Ltd. | SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
FR2800532B1 (en) | 1999-10-28 | 2002-01-04 | Pixtech Sa | VERY HIGH VOLTAGE SWITCH |
KR100350575B1 (en) | 1999-11-05 | 2002-08-28 | 주식회사 하이닉스반도체 | Silicon on insulator having source-body-substrate contact and method for fabricating the same |
JP3770008B2 (en) | 1999-11-05 | 2006-04-26 | 株式会社日立製作所 | Semiconductor power converter |
US6429723B1 (en) | 1999-11-18 | 2002-08-06 | Texas Instruments Incorporated | Integrated circuit with charge pump and method |
JP2001157487A (en) | 1999-11-26 | 2001-06-08 | Nissan Motor Co Ltd | Controller for electric rotating machine |
JP3520973B2 (en) | 1999-11-30 | 2004-04-19 | Necエレクトロニクス株式会社 | Semiconductor device |
US6396325B2 (en) | 1999-12-03 | 2002-05-28 | Fairchild Semiconductor Corporation | High frequency MOSFET switch |
JP3608456B2 (en) | 1999-12-08 | 2005-01-12 | セイコーエプソン株式会社 | Manufacturing method of SOI structure MIS field effect transistor |
US6449465B1 (en) | 1999-12-20 | 2002-09-10 | Motorola, Inc. | Method and apparatus for linear amplification of a radio frequency signal |
US6684065B2 (en) | 1999-12-20 | 2004-01-27 | Broadcom Corporation | Variable gain amplifier for low voltage applications |
JP2001186007A (en) | 1999-12-24 | 2001-07-06 | Sharp Corp | Metal oxide film semiconductor transistor circuit and semiconductor integrated circuit using it |
US6684055B1 (en) | 2000-01-18 | 2004-01-27 | Otis Elevator Company | System for remotely communicating voice and data to and from an elevator controller |
US6201761B1 (en) | 2000-01-26 | 2001-03-13 | Advanced Micro Devices, Inc. | Field effect transistor with controlled body bias |
US6222394B1 (en) | 2000-02-03 | 2001-04-24 | International Business Machines Corporation | SOI CMOS sense amplifier with enhanced matching characteristics and sense point tolerance |
US6504212B1 (en) | 2000-02-03 | 2003-01-07 | International Business Machines Corporation | Method and apparatus for enhanced SOI passgate operations |
US6429632B1 (en) | 2000-02-11 | 2002-08-06 | Micron Technology, Inc. | Efficient CMOS DC-DC converters based on switched capacitor power supplies with inductive current limiters |
JP3637830B2 (en) | 2000-02-22 | 2005-04-13 | 株式会社村田製作所 | SPDT switch and communication device using the same |
AU2001243426A1 (en) | 2000-03-03 | 2001-09-17 | Alpha Industries, Inc. | Electronic switch |
US6433587B1 (en) | 2000-03-17 | 2002-08-13 | International Business Machines Corporation | SOI CMOS dynamic circuits having threshold voltage control |
JP2001274264A (en) | 2000-03-24 | 2001-10-05 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
JP2001274265A (en) | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | Semiconductor device |
JP2001284576A (en) | 2000-03-30 | 2001-10-12 | Toshiba Corp | High electron mobility transistor and method of manufacturing the same |
JP3504212B2 (en) | 2000-04-04 | 2004-03-08 | シャープ株式会社 | Semiconductor device with SOI structure |
US6801076B1 (en) | 2000-04-28 | 2004-10-05 | Micron Technology, Inc. | High output high efficiency low voltage charge pump |
US6466082B1 (en) | 2000-05-17 | 2002-10-15 | Advanced Micro Devices, Inc. | Circuit technique to deal with floating body effects |
ATE343288T1 (en) | 2000-05-17 | 2006-11-15 | Cit Alcatel | MULTIPLICATION ARRANGEMENT, SIGNAL MODULATOR AND TRANSMITTER |
JP3696125B2 (en) | 2000-05-24 | 2005-09-14 | 株式会社東芝 | Potential detection circuit and semiconductor integrated circuit |
JP2001358606A (en) * | 2000-06-14 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Time-division multiplexing type radio equipment |
US6297696B1 (en) | 2000-06-15 | 2001-10-02 | International Business Machines Corporation | Optimized power amplifier |
JP2002033399A (en) | 2000-07-13 | 2002-01-31 | Toshiba Corp | Semiconductor integrated circuit and its manufacturing method |
US6461902B1 (en) | 2000-07-18 | 2002-10-08 | Institute Of Microelectronics | RF LDMOS on partial SOI substrate |
JP2002033484A (en) | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | Semiconductor device |
JP2002043862A (en) | 2000-07-26 | 2002-02-08 | Yrp Kokino Idotai Tsushin Kenkyusho:Kk | Pre-distortion circuit |
AU2001283169A1 (en) | 2000-08-10 | 2002-02-25 | University Of Southern California | Multiphase resonant pulse generators |
KR100381262B1 (en) | 2000-08-10 | 2003-04-26 | 엘지전자 주식회사 | Total Internal Reflection Prism System using the Digital Micromirror Device |
US6816016B2 (en) | 2000-08-10 | 2004-11-09 | Tropian, Inc. | High-efficiency modulating RF amplifier |
TW501227B (en) | 2000-08-11 | 2002-09-01 | Samsung Electronics Co Ltd | SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same |
US6816000B2 (en) | 2000-08-18 | 2004-11-09 | Texas Instruments Incorporated | Booster circuit |
US6249446B1 (en) | 2000-08-23 | 2001-06-19 | Intersil Americas Inc. | Cascadable, high efficiency charge pump circuit and related methods |
US6310508B1 (en) | 2000-08-24 | 2001-10-30 | Agilent Technologies, Inc. | High frequency switch |
US6512269B1 (en) | 2000-09-07 | 2003-01-28 | International Business Machines Corporation | High-voltage high-speed SOI MOSFET |
JP3666805B2 (en) | 2000-09-19 | 2005-06-29 | ローム株式会社 | DC / DC converter |
US6496074B1 (en) | 2000-09-28 | 2002-12-17 | Koninklijke Philips Electronics N.V. | Cascode bootstrapped analog power amplifier circuit |
JP2002111449A (en) | 2000-09-29 | 2002-04-12 | Mitsubishi Electric Corp | Voltage control oscillating circuit and phase synchronization loop circuit provided with the same |
US6559689B1 (en) | 2000-10-02 | 2003-05-06 | Allegro Microsystems, Inc. | Circuit providing a control voltage to a switch and including a capacitor |
US6978437B1 (en) | 2000-10-10 | 2005-12-20 | Toppan Photomasks, Inc. | Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same |
US6947720B2 (en) | 2000-10-17 | 2005-09-20 | Rf Micro Devices, Inc. | Low noise mixer circuit with improved gain |
US6509799B1 (en) | 2000-11-09 | 2003-01-21 | Intel Corporation | Electrically tuned integrated amplifier for wireless communications |
US6831847B2 (en) | 2000-11-20 | 2004-12-14 | Artesyn Technologies, Inc. | Synchronous rectifier drive circuit and power supply including same |
US6711397B1 (en) | 2000-11-20 | 2004-03-23 | Ami Semiconductor, Inc. | Structures and methods for direct conversion from radio frequency modulated signals to baseband signals |
US6411531B1 (en) | 2000-11-21 | 2002-06-25 | Linear Technology Corporation | Charge pump DC/DC converters with reduced input noise |
JP2002164441A (en) | 2000-11-27 | 2002-06-07 | Matsushita Electric Ind Co Ltd | High frequency switch circuit device |
JP4434474B2 (en) | 2000-11-29 | 2010-03-17 | Necエレクトロニクス株式会社 | MOS transistor simulation test method |
US6518829B2 (en) | 2000-12-04 | 2003-02-11 | United Memories, Inc. | Driver timing and circuit technique for a low noise charge pump circuit |
JP4138229B2 (en) | 2000-12-07 | 2008-08-27 | 新日本無線株式会社 | Switch semiconductor integrated circuit |
US6636119B2 (en) | 2000-12-21 | 2003-10-21 | Koninklijke Philips Electronics N.V. | Compact cascode radio frequency CMOS power amplifier |
US6380802B1 (en) | 2000-12-29 | 2002-04-30 | Ericsson Inc. | Transmitter using input modulation for envelope restoration scheme for linear high-efficiency power amplification |
AU2002240055A1 (en) | 2001-01-25 | 2002-08-06 | Regents Of The University Of Minnesota | High linearity circuits and methods regarding same |
US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6549064B2 (en) | 2001-02-12 | 2003-04-15 | Matrics, Inc. | Efficient charge pump apparatus |
JP2002246942A (en) | 2001-02-19 | 2002-08-30 | Sony Corp | Switching device and portable communication terminal device |
JP3616343B2 (en) | 2001-03-27 | 2005-02-02 | 松下電器産業株式会社 | High frequency switch circuit and communication terminal device using the same |
KR100363554B1 (en) | 2001-03-30 | 2002-12-05 | 삼성전자 주식회사 | Soi type semiconductor device and method of forming the same |
US6433589B1 (en) | 2001-04-12 | 2002-08-13 | International Business Machines Corporation | Sense amplifier and method for sensing signals in a silicon-on-insulator integrated circuit |
US6670655B2 (en) | 2001-04-18 | 2003-12-30 | International Business Machines Corporation | SOI CMOS device with body to gate connection |
TW530455B (en) | 2001-04-19 | 2003-05-01 | Sanyo Electric Co | Switch circuit device of compound semiconductor |
US6978122B2 (en) | 2001-05-25 | 2005-12-20 | Kabushiki Kaisha Toshiba | High-frequency switching device incorporating an inverter circuit |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
US6819938B2 (en) | 2001-06-26 | 2004-11-16 | Qualcomm Incorporated | System and method for power control calibration and a wireless communication device |
US6646305B2 (en) | 2001-07-25 | 2003-11-11 | International Business Machines Corporation | Grounded body SOI SRAM cell |
JP2003051751A (en) | 2001-08-07 | 2003-02-21 | Hitachi Ltd | Electronic component and wireless communication device |
KR100902296B1 (en) | 2001-08-10 | 2009-06-10 | 히타치 긴조쿠 가부시키가이샤 | Multi-band antenna switch circuit, and layered module composite part and communcation device using them |
JP3986780B2 (en) | 2001-08-17 | 2007-10-03 | 三菱電機株式会社 | Complementary push-pull amplifier |
US6698082B2 (en) | 2001-08-28 | 2004-03-02 | Texas Instruments Incorporated | Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode |
US7071792B2 (en) | 2001-08-29 | 2006-07-04 | Tropian, Inc. | Method and apparatus for impedance matching in an amplifier using lumped and distributed inductance |
US6486511B1 (en) | 2001-08-30 | 2002-11-26 | Northrop Grumman Corporation | Solid state RF switch with high cutoff frequency |
US6414863B1 (en) | 2001-08-30 | 2002-07-02 | Texas Instruments Incorporated | Frequency control circuit for unregulated inductorless DC/DC converters |
JP2003101407A (en) | 2001-09-21 | 2003-04-04 | Sharp Corp | Semiconductor integrated circuit |
US7796969B2 (en) | 2001-10-10 | 2010-09-14 | Peregrine Semiconductor Corporation | Symmetrically and asymmetrically stacked transistor group RF switch |
US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US6714065B2 (en) | 2001-10-26 | 2004-03-30 | Renesas Technology Corp. | Semiconductor device including power supply circuit conducting charge pumping operation |
JP2003143004A (en) | 2001-11-06 | 2003-05-16 | Matsushita Electric Ind Co Ltd | Level shifter circuit |
EP1310959B1 (en) | 2001-11-09 | 2008-06-18 | STMicroelectronics S.r.l. | Low power charge pump circuit |
US6971004B1 (en) | 2001-11-19 | 2005-11-29 | Cypress Semiconductor Corp. | System and method of dynamically reconfiguring a programmable integrated circuit |
JP2003167615A (en) | 2001-11-30 | 2003-06-13 | Toyota Motor Corp | Production plan making device and method |
US6717458B1 (en) | 2001-12-03 | 2004-04-06 | National Semiconductor Corporation | Method and apparatus for a DC-DC charge pump voltage converter-regulator circuit |
JP3813869B2 (en) | 2001-12-20 | 2006-08-23 | 松下電器産業株式会社 | Field effect transistor switch circuit |
US6608789B2 (en) | 2001-12-21 | 2003-08-19 | Motorola, Inc. | Hysteresis reduced sense amplifier and method of operation |
JP2003198248A (en) | 2001-12-26 | 2003-07-11 | Sharp Corp | Antenna-integrated package |
US6608785B2 (en) | 2002-01-07 | 2003-08-19 | International Business Machines Corporation | Method and apparatus to ensure functionality and timing robustness in SOI circuits |
US20030160515A1 (en) | 2002-01-15 | 2003-08-28 | Luke Yu | Controllable broad-spectrum harmonic filter (cbf) for electrical power systems |
JP3865689B2 (en) | 2002-01-15 | 2007-01-10 | 松下電器産業株式会社 | Level shift circuit |
US6677645B2 (en) | 2002-01-31 | 2004-01-13 | International Business Machines Corporation | Body contact MOSFET |
US6934520B2 (en) | 2002-02-21 | 2005-08-23 | Semiconductor Components Industries, L.L.C. | CMOS current mode RF detector and method |
JP2003318405A (en) | 2002-04-25 | 2003-11-07 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
DE10219371B4 (en) | 2002-04-30 | 2006-01-12 | Infineon Technologies Ag | A signal generating device for a charge pump and integrated circuit provided therewith |
JP2003332583A (en) | 2002-05-15 | 2003-11-21 | Sony Corp | Semiconductor device and its manufacturing method |
JP4009553B2 (en) | 2002-05-17 | 2007-11-14 | 日本電気株式会社 | High frequency switch circuit |
US6812885B2 (en) * | 2002-05-24 | 2004-11-02 | Honeywell International Inc. | Radio altimeter test method and apparatus |
JP4262933B2 (en) | 2002-05-30 | 2009-05-13 | Necエレクトロニクス株式会社 | High frequency circuit element |
US6960810B2 (en) | 2002-05-30 | 2005-11-01 | Honeywell International Inc. | Self-aligned body tie for a partially depleted SOI device structure |
JP4050096B2 (en) | 2002-05-31 | 2008-02-20 | 松下電器産業株式会社 | High frequency switch circuit and mobile communication terminal device |
GB2389255B (en) | 2002-05-31 | 2005-08-31 | Hitachi Ltd | Apparatus for radio telecommunication system and method of building up output power |
US7189606B2 (en) | 2002-06-05 | 2007-03-13 | Micron Technology, Inc. | Method of forming fully-depleted (FD) SOI MOSFET access transistor |
US6933744B2 (en) | 2002-06-11 | 2005-08-23 | The Regents Of The University Of Michigan | Low-leakage integrated circuits and dynamic logic circuits |
JP4137528B2 (en) | 2002-06-13 | 2008-08-20 | セイコーインスツル株式会社 | Power conversion circuit |
US6642578B1 (en) | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
US6891234B1 (en) | 2004-01-07 | 2005-05-10 | Acorn Technologies, Inc. | Transistor with workfunction-induced charge layer |
US7212788B2 (en) | 2002-08-13 | 2007-05-01 | Atheros Communications, Inc. | Method and apparatus for signal power loss reduction in RF communication systems |
US6677803B1 (en) | 2002-08-21 | 2004-01-13 | Oki Electric Industry Co., Ltd. | Semiconductor integrated circuit device |
US7608927B2 (en) | 2002-08-29 | 2009-10-27 | Micron Technology, Inc. | Localized biasing for silicon on insulator structures |
US7092677B1 (en) | 2002-09-05 | 2006-08-15 | Analog Devices, Inc. | 2V SPDT switch for high power RF wireless applications |
US6803680B2 (en) | 2002-09-13 | 2004-10-12 | Mia-Com, Inc. | Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage |
US6788130B2 (en) | 2002-09-25 | 2004-09-07 | Texas Instruments Incorporated | Efficient charge pump capable of high voltage operation |
JP2004147045A (en) | 2002-10-24 | 2004-05-20 | Matsushita Electric Ind Co Ltd | High-frequency switch |
JP4052923B2 (en) | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | Semiconductor device |
JP3445608B2 (en) | 2002-10-25 | 2003-09-08 | 株式会社東芝 | Digital information management system including video information |
JP2004166470A (en) | 2002-11-13 | 2004-06-10 | Hitachi Lighting Ltd | Inverter system |
JP4154578B2 (en) | 2002-12-06 | 2008-09-24 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
JP2004199950A (en) | 2002-12-17 | 2004-07-15 | Shin Kobe Electric Mach Co Ltd | Manufacturing method of positive electrode plate for lead-acid storage battery |
US7515882B2 (en) | 2002-12-17 | 2009-04-07 | Kelcourse Mark F | Apparatus, methods and articles of manufacture for a multi-band switch |
US20040204013A1 (en) | 2002-12-23 | 2004-10-14 | Qing Ma | Communication unit and switch unit |
JP2004205301A (en) | 2002-12-25 | 2004-07-22 | Nec Corp | Evaluation device and circuit designing method used therefor |
US7132873B2 (en) | 2003-01-08 | 2006-11-07 | Emosyn America, Inc. | Method and apparatus for avoiding gated diode breakdown in transistor circuits |
US6774701B1 (en) | 2003-02-19 | 2004-08-10 | Raytheon Company | Method and apparatus for electronic switching with low insertion loss and high isolation |
US6975271B2 (en) | 2003-02-26 | 2005-12-13 | Matsushita Electric Industrial Co., Ltd. | Antenna switch module, all-in-one communication module, communication apparatus and method for manufacturing antenna switch module |
US6903596B2 (en) | 2003-03-17 | 2005-06-07 | Mitsubishi Electric & Electronics U.S.A., Inc. | Method and system for impedance matched switching |
US6954623B2 (en) | 2003-03-18 | 2005-10-11 | Skyworks Solutions, Inc. | Load variation tolerant radio frequency (RF) amplifier |
JP2004288978A (en) | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | Semiconductor integrated device |
US6825730B1 (en) | 2003-03-31 | 2004-11-30 | Applied Micro Circuits Corporation | High-performance low-noise charge-pump for voltage controlled oscillator applications |
US6897701B2 (en) | 2003-05-13 | 2005-05-24 | Texas Instruments Incorporated | Method and structure for improving the linearity of MOS switches |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP2005006072A (en) | 2003-06-12 | 2005-01-06 | Matsushita Electric Ind Co Ltd | High frequency switch apparatus and semiconductor device |
JP2005006143A (en) | 2003-06-13 | 2005-01-06 | Matsushita Electric Ind Co Ltd | High frequency switch circuit and semiconductor device |
US7023260B2 (en) | 2003-06-30 | 2006-04-04 | Matrix Semiconductor, Inc. | Charge pump circuit incorporating corresponding parallel charge pump stages and method therefor |
JP4202852B2 (en) | 2003-08-27 | 2008-12-24 | 株式会社ルネサステクノロジ | Communication electronic parts and transmission / reception switching semiconductor device |
DE10340846A1 (en) | 2003-09-04 | 2005-05-04 | Infineon Technologies Ag | Transistor arrangement for reducing noise, integrated circuit and method for reducing the noise of field effect transistors |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
JP2005136948A (en) | 2003-10-08 | 2005-05-26 | Renesas Technology Corp | Antenna switch circuit |
JP4000103B2 (en) | 2003-10-09 | 2007-10-31 | 三菱電機株式会社 | High frequency switch device and high frequency switch structure |
US6830963B1 (en) | 2003-10-09 | 2004-12-14 | Micron Technology, Inc. | Fully depleted silicon-on-insulator CMOS logic |
US7353020B2 (en) * | 2003-11-17 | 2008-04-01 | Hitachi Communication Technologies, Ltd. | Radio access point testing apparatus and method of testing radio access point |
US7045873B2 (en) | 2003-12-08 | 2006-05-16 | International Business Machines Corporation | Dynamic threshold voltage MOSFET on SOI |
US7068096B2 (en) | 2003-12-08 | 2006-06-27 | Northrop Grumman Corporation | EER modulator with power amplifier having feedback loop providing soft output impedance |
US6953738B2 (en) | 2003-12-12 | 2005-10-11 | Freescale Semiconductor, Inc. | Method and apparatus for forming an SOI body-contacted transistor |
DE10358713A1 (en) | 2003-12-15 | 2005-08-11 | Infineon Technologies Ag | Transistor arrangement for reducing noise, integrated circuit and method for reducing the noise of field effect transistors |
US7109532B1 (en) | 2003-12-23 | 2006-09-19 | Lee Zachary K | High Ion/Ioff SOI MOSFET using body voltage control |
JP4024762B2 (en) | 2004-01-16 | 2007-12-19 | ユーディナデバイス株式会社 | High frequency switch |
JP4342970B2 (en) | 2004-02-02 | 2009-10-14 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
JP4868433B2 (en) | 2004-02-09 | 2012-02-01 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | Distortion compensation apparatus and power amplification apparatus with distortion compensation function |
US7042044B2 (en) | 2004-02-18 | 2006-05-09 | Koucheng Wu | Nor-type channel-program channel-erase contactless flash memory on SOI |
US7072217B2 (en) | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
JP2005251931A (en) | 2004-03-03 | 2005-09-15 | Seiko Epson Corp | Terminating circuit |
JP4321359B2 (en) | 2004-05-31 | 2009-08-26 | パナソニック株式会社 | Semiconductor switch |
JP4559772B2 (en) | 2004-05-31 | 2010-10-13 | パナソニック株式会社 | Switch circuit |
EP1774620B1 (en) | 2004-06-23 | 2014-10-01 | Peregrine Semiconductor Corporation | Integrated rf front end |
US7248120B2 (en) | 2004-06-23 | 2007-07-24 | Peregrine Semiconductor Corporation | Stacked transistor method and apparatus |
US7098507B2 (en) | 2004-06-30 | 2006-08-29 | Intel Corporation | Floating-body dynamic random access memory and method of fabrication in tri-gate technology |
JP2006025062A (en) | 2004-07-07 | 2006-01-26 | Matsushita Electric Ind Co Ltd | High frequency switch circuit |
US7738877B2 (en) | 2004-07-19 | 2010-06-15 | Cisco Technology, Inc. | Wireless network management with antenna control |
US20060022526A1 (en) | 2004-07-27 | 2006-02-02 | David Cartalade | Asymmetric radio-frequency switch |
US7391282B2 (en) | 2004-11-17 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Radio-frequency switch circuit and semiconductor device |
DE102004056435A1 (en) | 2004-11-23 | 2006-06-01 | Universität Stuttgart | Power amplifier for amplifying radio frequency (RF) signals |
EP1829229B1 (en) * | 2004-12-22 | 2019-01-23 | Nokia Technologies Oy | Interoperability improvement between receivers and transmitters in a mobile station |
US7546089B2 (en) | 2004-12-23 | 2009-06-09 | Triquint Semiconductor, Inc. | Switchable directional coupler for use with RF devices |
US20060161520A1 (en) | 2005-01-14 | 2006-07-20 | Microsoft Corporation | System and method for generating alternative search terms |
US8081928B2 (en) | 2005-02-03 | 2011-12-20 | Peregrine Semiconductor Corporation | Canceling harmonics in semiconductor RF switches |
US7129545B2 (en) | 2005-02-24 | 2006-10-31 | International Business Machines Corporation | Charge modulation network for multiple power domains for silicon-on-insulator technology |
JP2006332416A (en) | 2005-05-27 | 2006-12-07 | Nec Electronics Corp | Semiconductor device |
US7359677B2 (en) | 2005-06-10 | 2008-04-15 | Sige Semiconductor Inc. | Device and methods for high isolation and interference suppression switch-filter |
KR100603721B1 (en) | 2005-06-11 | 2006-07-24 | 삼성전자주식회사 | Body biasing structuer of soi |
US7402850B2 (en) | 2005-06-21 | 2008-07-22 | Micron Technology, Inc. | Back-side trapped non-volatile memory device |
US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
US20070023833A1 (en) | 2005-07-28 | 2007-02-01 | Serguei Okhonin | Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same |
US7266014B2 (en) | 2005-08-01 | 2007-09-04 | Macronix International Co., Ltd | Method of operating non-volatile memory device |
US20070045697A1 (en) | 2005-08-31 | 2007-03-01 | International Business Machines Corporation | Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures |
WO2007033045A2 (en) | 2005-09-12 | 2007-03-22 | Idaho Research Foundation, Inc. | Stacked mosfets |
US8195103B2 (en) | 2006-02-15 | 2012-06-05 | Texas Instruments Incorporated | Linearization of a transmit amplifier |
JP2008011503A (en) | 2006-05-31 | 2008-01-17 | Matsushita Electric Ind Co Ltd | High-frequency switching circuit, high-frequency switching device and transmission module device |
US7532483B2 (en) * | 2006-06-09 | 2009-05-12 | Peregrine Semiconductor Corporation | Mounting integrated circuit dies for high frequency signal isolation |
JP2008035487A (en) | 2006-06-19 | 2008-02-14 | Renesas Technology Corp | Rf power amplifier |
US7894779B2 (en) * | 2006-06-22 | 2011-02-22 | Honeywell International Inc. | Apparatus and method for transmitting and receiving multiple radio signals over a single antenna |
EP2052479A2 (en) * | 2006-07-11 | 2009-04-29 | Nxp B.V. | Calibration of transmit signals in fdd-transceivers |
US7639199B2 (en) * | 2006-09-22 | 2009-12-29 | Broadcom Corporation | Programmable antenna with programmable impedance matching and methods for use therewith |
US7808342B2 (en) | 2006-10-02 | 2010-10-05 | Skyworks Solutions, Inc. | Harmonic phase tuning filter for RF switches |
FR2906893B1 (en) | 2006-10-06 | 2009-01-16 | Thales Sa | METHOD AND DEVICE FOR MONITORING THE INTEGRITY OF INFORMATION DELIVERED BY AN INS / GNSS HYBRID SYSTEM |
US20080191788A1 (en) | 2007-02-08 | 2008-08-14 | International Business Machines Corporation | Soi mosfet device with adjustable threshold voltage |
US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US7817966B2 (en) | 2007-07-13 | 2010-10-19 | Skyworks Solutions, Inc. | Switching device with reduced intermodulation distortion |
US20090180403A1 (en) * | 2008-01-11 | 2009-07-16 | Bogdan Tudosoiu | Multi-band and multi-mode radio frequency front-end module architecture |
EP3346611B1 (en) | 2008-02-28 | 2021-09-22 | pSemi Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
US20100330938A1 (en) | 2008-03-13 | 2010-12-30 | Freescale Semiconductor, Inc. | Power detector |
US8112043B2 (en) * | 2008-04-11 | 2012-02-07 | Infineon Technologies Ag | Radio frequency communication devices and methods |
US7868683B2 (en) | 2008-08-12 | 2011-01-11 | Infineon Technologies Ag | Switch using an accelerating element |
JP5299995B2 (en) | 2008-08-26 | 2013-09-25 | アルパイン株式会社 | Map display device |
KR100905948B1 (en) | 2008-08-28 | 2009-07-06 | (주)카이로넷 | Doherty amplifier and signal amplification system having the same, method for amplifying signal |
US8103226B2 (en) | 2008-10-28 | 2012-01-24 | Skyworks Solutions, Inc. | Power amplifier saturation detection |
US8131225B2 (en) | 2008-12-23 | 2012-03-06 | International Business Machines Corporation | BIAS voltage generation circuit for an SOI radio frequency switch |
US8022772B2 (en) * | 2009-03-19 | 2011-09-20 | Qualcomm Incorporated | Cascode amplifier with protection circuitry |
US7786807B1 (en) | 2009-04-23 | 2010-08-31 | Broadcom Corporation | Cascode CMOS RF power amplifier with programmable feedback cascode bias under multiple supply voltages |
US8232627B2 (en) | 2009-09-21 | 2012-07-31 | International Business Machines Corporation | Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device |
EP2339746B1 (en) | 2009-12-15 | 2013-02-20 | Nxp B.V. | Doherty amplifier with composed transfer characteristic having multiple peak amplifiers |
US8111104B2 (en) | 2010-01-25 | 2012-02-07 | Peregrine Semiconductor Corporation | Biasing methods and devices for power amplifiers |
US8552816B2 (en) * | 2010-03-23 | 2013-10-08 | Rf Micro Devices, Inc. | Multiband simultaneous transmission and reception front end architecture |
CN103109457B (en) * | 2010-05-17 | 2016-08-03 | 泰科电子服务股份有限公司 | There is the duplexer strengthening isolation |
US8792836B2 (en) | 2010-06-03 | 2014-07-29 | Broadcom Corporation | Front end module with compensating duplexer |
JP6006219B2 (en) | 2010-10-20 | 2016-10-12 | ペレグリン セミコンダクター コーポレイション | Method and apparatus used to improve MOSFET linearity using stored charge sinks-Suppression of harmonic wrinkles |
US9112570B2 (en) * | 2011-02-03 | 2015-08-18 | Rf Micro Devices, Inc. | Femtocell tunable receiver filtering system |
US8427241B2 (en) | 2011-05-24 | 2013-04-23 | Amcom Communications, Inc. | High efficiency, high frequency amplifiers |
US9002309B2 (en) * | 2011-05-27 | 2015-04-07 | Qualcomm Incorporated | Tunable multi-band receiver |
US9124265B2 (en) | 2011-07-13 | 2015-09-01 | Peregrine Semiconductor Corporation | Method and apparatus for transistor switch isolation |
US8729948B2 (en) | 2012-01-20 | 2014-05-20 | Samsung Electro-Mechanics Co., Ltd. | High frequency switch |
US20140028521A1 (en) | 2012-07-27 | 2014-01-30 | Rf Micro Devices, Inc. | Tuner topology for wide bandwidth |
US9124355B2 (en) * | 2012-08-22 | 2015-09-01 | Google Technology Holdings LLC | Tunable notch filtering in multi-transmit applications |
US9208943B2 (en) | 2012-09-23 | 2015-12-08 | Dsp Group Ltd. | Linear row array integrated power combiner for RF power amplifiers |
US9413298B2 (en) | 2012-12-28 | 2016-08-09 | Peregrine Semiconductor Corporation | Amplifier dynamic bias adjustment for envelope tracking |
US9602063B2 (en) | 2013-03-12 | 2017-03-21 | Peregrine Semiconductor Corporation | Variable impedance match and variable harmonic terminations for different modes and frequency bands |
US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
US9595923B2 (en) | 2013-03-14 | 2017-03-14 | Peregrine Semiconductor Corporation | Systems and methods for optimizing amplifier operations |
-
2014
- 2014-02-14 US US14/181,489 patent/US20150236748A1/en not_active Abandoned
- 2014-02-14 US US14/181,478 patent/US20150236798A1/en not_active Abandoned
- 2014-03-03 US US14/195,701 patent/US10038409B2/en active Active
- 2014-04-01 US US14/242,373 patent/US9419565B2/en active Active
- 2014-05-07 US US14/272,387 patent/US20150326326A1/en not_active Abandoned
-
2016
- 2016-06-21 US US15/188,851 patent/US9800211B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070082617A1 (en) * | 2005-10-11 | 2007-04-12 | Crestcom, Inc. | Transceiver with isolation-filter compensation and method therefor |
US8682260B1 (en) * | 2008-10-28 | 2014-03-25 | Rf Micro Devices, Inc. | Power amplifier with tunable bandpass and notch filter |
US20130244591A1 (en) * | 2012-03-19 | 2013-09-19 | Qualcomm Incorporated | Limited q factor tunable front end using tunable circuits and microelectromechanical system (mems) |
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US9762274B2 (en) * | 2014-05-29 | 2017-09-12 | Qualcomm Incorporated | Feedback receive path with RF filter |
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Also Published As
Publication number | Publication date |
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US10038409B2 (en) | 2018-07-31 |
US9419565B2 (en) | 2016-08-16 |
US20150249479A1 (en) | 2015-09-03 |
US20160301368A1 (en) | 2016-10-13 |
US20150280655A1 (en) | 2015-10-01 |
US20150236798A1 (en) | 2015-08-20 |
US20150326326A1 (en) | 2015-11-12 |
US9800211B2 (en) | 2017-10-24 |
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