JPH08148949A - High frequency amplifier - Google Patents
High frequency amplifierInfo
- Publication number
- JPH08148949A JPH08148949A JP28559394A JP28559394A JPH08148949A JP H08148949 A JPH08148949 A JP H08148949A JP 28559394 A JP28559394 A JP 28559394A JP 28559394 A JP28559394 A JP 28559394A JP H08148949 A JPH08148949 A JP H08148949A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- harmonic
- value
- frequency amplifier
- amplification element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば８００ＭＨｚ帯
〜２．５ＧＨｚ帯の高周波を増幅して電力を負荷に供給
する高周波増幅器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency amplifier for amplifying a high frequency of 800 MHz band to 2.5 GHz band and supplying electric power to a load.
【０００２】[0002]
【従来の技術】一般に、増幅素子を高効率に動作させる
ために、増幅素子の出力に発生する高調波に対して、そ
の負荷を偶数次高調波に対しては短絡、奇数次高調波に
対しては開放とすることによって、高調波による電力発
生を無くし、基本波の電力成分を高めて増幅器を高効率
動作させるようにしたＦ級増幅器が知られている。2. Description of the Related Art In general, in order to operate an amplifying element with high efficiency, the harmonics generated at the output of the amplifying element are short-circuited with respect to the even harmonics and the load with respect to the odd harmonics. There is known a class F amplifier in which power generation due to harmonics is eliminated by increasing the power component of the fundamental wave to operate the amplifier with high efficiency by opening it.
【０００３】図１２はＦ級増幅器の回路例である。この
図１２に示す高周波増幅器では、増幅素子（電界効果ト
ランジスタ（ＦＥＴ））１０１の出力側に、基本波の１
／４波長の伝送線路１０２を介して、基本波整合回路１
０３が接続されるとともに、基本波に共振する並列共振
回路１０４が接続されている。ここで、増幅素子１０１
の出力側に発生する高調波のうち第２高調波以上の周波
数についていえば、並列共振回路１０４はほぼ短絡負荷
とみなせる。したがって、第２高調波についていえば伝
送線路１０２は１／２波長の線路となり、増幅素子１０
１の出力端で短絡負荷にすることができ、第３高調波に
ついていえば伝送線路１０２は３／４波長の線路とな
り、増幅素子１０１の出力端で開放負荷にすることがで
きる。第４次以上の高調波についても同様である。FIG. 12 is a circuit example of a class F amplifier. In the high frequency amplifier shown in FIG. 12, the fundamental wave 1 is added to the output side of the amplification element (field effect transistor (FET)) 101.
A fundamental wave matching circuit 1 via a / 4 wavelength transmission line 102.
03 is connected, and the parallel resonance circuit 104 that resonates with the fundamental wave is connected. Here, the amplification element 101
Regarding the frequencies higher than the second harmonic among the harmonics generated on the output side of, the parallel resonance circuit 104 can be regarded as a short-circuit load. Therefore, in terms of the second harmonic, the transmission line 102 becomes a line of ½ wavelength, and the amplification element 10
A short-circuit load can be applied at the output end of 1, the transmission line 102 can be a 3/4 wavelength line for the third harmonic, and an open load can be applied at the output end of the amplification element 101. The same applies to the fourth and higher harmonics.
【０００４】なお、図１２中の１０５は増幅素子１０１
の入力バイアス回路、１０６は増幅素子１０１の出力バ
イアス回路、１０７は入力バイアス回路１０５の電源端
子（入力電源端子）、１０８は出力バイアス回路１０６
の電源端子（出力電源端子）である。ところで、増幅器
の出力に含まれる高調波成分は第２，第３高調波成分が
大きいので、第２高調波と第３高調波だけを考慮する場
合が多い。図１３，図１４は第２高調波と第３高調波だ
けを考慮した例である。Reference numeral 105 in FIG. 12 is an amplifying element 101.
Input bias circuit, 106 is an output bias circuit of the amplification element 101, 107 is a power supply terminal (input power supply terminal) of the input bias circuit 105, and 108 is an output bias circuit 106.
Is a power supply terminal (output power supply terminal). By the way, since the harmonic components included in the output of the amplifier are large in the second and third harmonic components, it is often the case that only the second and third harmonic components are considered. 13 and 14 are examples in which only the second harmonic and the third harmonic are considered.
【０００５】まず、図１３は増幅素子１０１の出力端
に、第３高調波に共振する並列共振回路１０９を接続し
たものである。ここで、並列共振回路１０９の誘導素子
１０９ａのインダクタンス値を小さくすると、第３高調
波より低い周波数ではインピーダンスはほぼ０とみなせ
る。また、並列共振回路１０９の他端には第２高調波で
共振する直列共振回路１１０が一端を接地されて接続さ
れている。以上の構成から、第２高調波については短絡
負荷、第３高調波については開放負荷を実現している。First, in FIG. 13, a parallel resonance circuit 109 that resonates with the third harmonic is connected to the output terminal of the amplification element 101. Here, if the inductance value of the inductive element 109a of the parallel resonant circuit 109 is reduced, the impedance can be regarded as almost zero at frequencies lower than the third harmonic. A series resonance circuit 110 that resonates at the second harmonic is connected to the other end of the parallel resonance circuit 109 with one end grounded. With the above configuration, a short-circuit load for the second harmonic and an open load for the third harmonic are realized.
【０００６】また、図１４は増幅素子１０１の出力側
に、伝送線路１１１を介して第３高調波で共振する直列
共振回路１１３（この直列共振回路１１３の他端は接地
されている）を並列に接続するとともに、更に伝送線路
１１２を介して第２高調波で共振する直列共振回路１１
４（この直列共振回路１１４の他端は接地されている）
を並列に接続したものである。ここで、直列共振回路
（第２高調波共振回路）１１４と増幅素子１０１の距離
は基本波の波長で１／４波長、直列共振回路（第３高調
波共振回路）１１３と増幅素子１０１の距離は基本波の
波長で１／１２に設定されており（従って、伝送線路１
１１の長さは１／４波長相当、伝送線路１１２の長さは
１／６波長相当である）、これにより、第２高調波では
短絡負荷、第３高調波では開放負荷を実現している。Further, in FIG. 14, a series resonance circuit 113 (the other end of the series resonance circuit 113 is grounded) which resonates at the third harmonic through the transmission line 111 is connected in parallel to the output side of the amplification element 101. And a series resonance circuit 11 that resonates at the second harmonic through the transmission line 112.
4 (the other end of the series resonance circuit 114 is grounded)
Are connected in parallel. Here, the distance between the series resonance circuit (second harmonic resonance circuit) 114 and the amplification element 101 is a quarter wavelength of the fundamental wave, and the distance between the series resonance circuit (third harmonic resonance circuit) 113 and the amplification element 101. Is set to 1/12 of the wavelength of the fundamental wave (therefore, transmission line 1
The length of 11 is equivalent to 1/4 wavelength, and the length of the transmission line 112 is equivalent to 1/6 wavelength.) With this, a short-circuit load is realized at the second harmonic and an open load is realized at the third harmonic. .
【０００７】なお、図１３，１４中、図１２と同じ符号
は同様の部分を示している。In FIGS. 13 and 14, the same symbols as those in FIG. 12 indicate the same parts.
【０００８】[0008]
【発明が解決しようとする課題】上記の回路において
は、共振回路の共振周波数以外では共振回路は理想的な
開放または短絡として扱われているが、実際にはある値
を持つため、共振回路の後段に接続されている基本波整
合回路のインピーダンスに影響を与える。そのため、基
本波整合回路は、各高調波に対する共振回路を接続した
場合、基本波の整合についてそれぞれの共振回路の基本
波成分を考慮して設計しなければならず、その結果、整
合回路を独立に設計できない。これにより、設計が煩雑
となったり、より良い特性を得るための基本波整合回路
だけの調整ができないという課題がある。In the above circuit, the resonance circuit is treated as an ideal open or short circuit except for the resonance frequency of the resonance circuit, but since it actually has a certain value, Affects the impedance of the fundamental wave matching circuit connected in the subsequent stage. Therefore, the fundamental wave matching circuit must be designed by considering the fundamental wave component of each resonant circuit when the resonant circuit for each harmonic is connected, and as a result, the matching circuit must be independent. Can not be designed to. As a result, there are problems that the design becomes complicated and that only the fundamental wave matching circuit cannot be adjusted to obtain better characteristics.
【０００９】なお、今まで２倍波共振器に基本波に共振
するような並列誘導素子を接続し、回路の小型化をねら
った例（例えば、特開平５−２４３８７３号公報の技術
参照）は提案されているが、より効率を高めるために、
３倍波まで考慮された例はなかった。本発明は、このよ
うな課題に鑑み創案されたもので、基本波整合回路に影
響しない第２高調波短絡回路と第３高調波開放回路を同
時に実現できるようにして、設計の自由度の高い高効率
な高周波増幅器を提供するとともに、基本波整合回路の
調整も独立してできるようにして、特性の良い高周波増
幅器を提供することを目的とする。An example in which a parallel inductive element that resonates with a fundamental wave is connected to a second harmonic resonator so as to reduce the size of the circuit (see, for example, the technique disclosed in Japanese Patent Laid-Open No. 5-243873). Proposed, but for greater efficiency,
There was no case where the third harmonic was considered. The present invention was devised in view of the above problems, and has a high degree of freedom in design by enabling simultaneous implementation of a second harmonic short circuit and a third harmonic open circuit that do not affect the fundamental matching circuit. An object of the present invention is to provide a high-efficiency high-frequency amplifier, and also to independently adjust the fundamental wave matching circuit to provide a high-frequency amplifier with excellent characteristics.
【００１０】[0010]
【課題を解決するための手段】図１は本発明の原理を説
明する電気回路図であり、この図１において、１は増幅
素子で、この増幅素子１に直列に接続された基本波整合
回路２を介して負荷に電力を供給するようになってい
る。また、基本波整合回路２には、増幅素子１と直列に
接続された誘導素子２Ａが設けられている。なお、２Ｂ
はその他の基本波整合回路部分である。FIG. 1 is an electric circuit diagram for explaining the principle of the present invention. In FIG. 1, reference numeral 1 is an amplifier element, and a fundamental wave matching circuit connected in series to the amplifier element 1. The electric power is supplied to the load via 2. Further, the fundamental wave matching circuit 2 is provided with an inductive element 2A connected in series with the amplification element 1. 2B
Are other fundamental wave matching circuit parts.
【００１１】さらに、３は直列共振回路で、この直列共
振回路３は、増幅素子１の出力端に一端を接続されると
ともに他端を接地されることにより、増幅素子１の出力
端に対し並列に接続されて、増幅素子１の出力側に発生
する信号の高調波のうちの第２高調波に共振するもので
ある。また、４は並列共振回路であり、この並列共振回
路４は、増幅素子１の出力端に一端を接続されるととも
に他端を接地されることにより、増幅素子の出力端及び
直列共振回路３に対し並列に接続されて、増幅素子１の
出力側に発生する信号の基本波及び第３高調波に直列共
振回路３と共に共振するものである（請求項１）。Further, 3 is a series resonance circuit, which is connected in parallel to the output end of the amplification element 1 by connecting one end to the output end of the amplification element 1 and grounding the other end. And is resonated with the second harmonic of the harmonics of the signal generated on the output side of the amplification element 1. Reference numeral 4 denotes a parallel resonance circuit. The parallel resonance circuit 4 has one end connected to the output end of the amplification element 1 and the other end grounded, so that the parallel resonance circuit 4 is connected to the output end of the amplification element and the series resonance circuit 3. On the other hand, they are connected in parallel and resonate together with the series resonance circuit 3 with respect to the fundamental wave and the third harmonic of the signal generated at the output side of the amplifying element 1 (claim 1).
【００１２】なお、直列共振回路３のインピーダンス値
を、増幅素子１の出力端から入力側を見たときに見込ま
れる増幅素子１の内部インピーダンスの直列誘導成分を
含めて第２高調波で共振する値に設定することができる
（請求項２）。このとき、増幅素子１を電界効果トラン
ジスタ（ＦＥＴ）で構成した場合は、直列共振回路３の
インピーダンス値を、増幅素子１の内部ドレインインダ
クタンスの値を含めて第２高調波で共振する値に設定す
る（請求項３）。The impedance value of the series resonance circuit 3 resonates at the second harmonic including the series induction component of the internal impedance of the amplification element 1 which is expected when the input side is viewed from the output end of the amplification element 1. It can be set to a value (claim 2). At this time, when the amplification element 1 is composed of a field effect transistor (FET), the impedance value of the series resonance circuit 3 is set to a value that resonates at the second harmonic including the value of the internal drain inductance of the amplification element 1. (Claim 3).
【００１３】さらに、並列共振回路４のインピーダンス
値を、直列共振回路３のリアクタンス成分と増幅素子１
の出力端から入力側を見たときに見込まれる増幅素子１
の内部インピーダンスの並列容量成分とを含めて基本波
及び第３高調波で共振する値に設定することもできる
（請求項４）。このとき、増幅素子１を電界効果トラン
ジスタ（ＦＥＴ）で構成した場合は、並列共振回路４の
インピーダンス値を、直列共振回路３のリアクタンス成
分と増幅素子１の内部ドレインソースキャパシタと内部
ドレインインダクタンスとを含めて基本波及び第３高調
波で共振する値に設定する（請求項５）。Further, the impedance value of the parallel resonance circuit 4 is set to the reactance component of the series resonance circuit 3 and the amplification element 1.
Amplification element 1 expected when the input side is seen from the output end of
It is also possible to set a value that resonates with the fundamental wave and the third harmonic, including the parallel capacitance component of the internal impedance of (4). At this time, when the amplifying element 1 is formed of a field effect transistor (FET), the impedance value of the parallel resonant circuit 4 is set to the reactance component of the series resonant circuit 3, the internal drain source capacitor of the amplifying element 1, and the internal drain inductance. Including it, it is set to a value that resonates with the fundamental wave and the third harmonic (claim 5).
【００１４】さらに、直列共振回路３のインピーダンス
値を、増幅素子１の出力端から入力側を見たときに見込
まれる増幅素子１の内部インピーダンスの直列誘導成分
を含めて第２高調波で共振する値に設定するともに、並
列共振回路４のインピーダンス値を、直列共振回路３の
リアクタンス成分と増幅素子１の出力端から入力側を見
たときに見込まれる増幅素子１の内部インピーダンスの
並列容量成分とを含めて基本波及び第３高調波で共振す
る値に設定することもできる（請求項６）。Further, the impedance value of the series resonance circuit 3 resonates at the second harmonic including the series induction component of the internal impedance of the amplification element 1 which is expected when the input side is viewed from the output end of the amplification element 1. In addition to setting the impedance value of the parallel resonance circuit 4 to the value of the reactance component of the series resonance circuit 3 and the parallel capacitance component of the internal impedance of the amplification element 1 expected when the input side is viewed from the output end of the amplification element 1. Can be set to a value that resonates with the fundamental wave and the third harmonic (claim 6).
【００１５】このとき、増幅素子１を電界効果トランジ
スタ（ＦＥＴ）で構成した場合は、直列共振回路３のイ
ンピーダンス値を、増幅素子１の内部ドレインインダク
タンスを含めて第２高調波で共振する値に設定するとと
もに、並列共振回路４のインピーダンス値を、直列共振
回路３のリアクタンス成分と増幅素子１の内部ドレイン
ソースキャパシタと内部ドレインインダクタンスとを含
めて基本波及び第３高調波で共振する値に設定する（請
求項７）。At this time, when the amplifying element 1 is composed of a field effect transistor (FET), the impedance value of the series resonance circuit 3 is set to a value that resonates at the second harmonic including the internal drain inductance of the amplifying element 1. The impedance value of the parallel resonance circuit 4 is set to a value that resonates at the fundamental wave and the third harmonic, including the reactance component of the series resonance circuit 3, the internal drain source capacitor of the amplification element 1, and the internal drain inductance. (Claim 7).
【００１６】また、並列共振回路４を構成する誘導素子
が容量素子を介して高周波的に接地されるとともに、こ
の誘導素子と容量素子との接続点に電源が接続されるよ
うにしてもよい（請求項８）。さらに、直列共振回路３
を構成する誘導素子と容量素子の接続点に、電源が接続
されるようにしてもよい（請求項９）。Further, the inductive element forming the parallel resonant circuit 4 may be grounded in a high frequency manner via the capacitive element, and the power source may be connected to the connection point between the inductive element and the capacitive element ( Claim 8). Furthermore, the series resonance circuit 3
A power source may be connected to the connection point between the inductive element and the capacitive element that compose the above (claim 9).
【００１７】なお、基本波整合回路２中の誘導素子２Ａ
と並列に、第３高調波に共振する容量素子を接続しても
よい（請求項１０）。The inductive element 2A in the fundamental wave matching circuit 2
A capacitor element that resonates with the third harmonic may be connected in parallel with (claim 10).
【００１８】[0018]
【作用】上述の本発明の高周波増幅器では、増幅素子１
に直列に接続された基本波整合回路２を介して負荷に電
力を供給するが、まず、基本波整合回路２の誘導素子２
Ａによって、基本波よりも高い周波数で高インピーダン
スを実現する。また、直列共振回路３が第２高調波に共
振し、並列共振回路４が直列共振回路３と共に基本波及
び第３高調波に共振して、第２高調波では短絡負荷、第
３高調波では開放負荷を実現する。In the high frequency amplifier of the present invention described above, the amplifying element 1
Power is supplied to the load via the fundamental wave matching circuit 2 connected in series with the inductive element 2 of the fundamental wave matching circuit 2.
With A, high impedance is realized at a frequency higher than the fundamental wave. Further, the series resonant circuit 3 resonates with the second harmonic, the parallel resonant circuit 4 resonates with the series resonant circuit 3 with the fundamental wave and the third harmonic, and in the second harmonic, a short-circuit load and in the third harmonic, Achieve an open load.
【００１９】このとき、直列共振回路３のインピーダン
ス値は、増幅素子１の内部インピーダンスの直列誘導成
分を含めて第２高調波で共振する値に設定したり、増幅
素子１の内部ドレインインダクタンスの値を含めて第２
高調波で共振する値に設定され、並列共振回路４のイン
ピーダンス値は、直列共振回路３のリアクタンス成分と
増幅素子１の内部インピーダンスの並列容量成分とを含
めて基本波及び第３高調波で共振する値に設定したり、
直列共振回路３のリアクタンス成分と増幅素子１の内部
ドレインソースキャパシタと内部ドレインインダクタン
スとを含めて基本波及び第３高調波で共振する値に設定
される。At this time, the impedance value of the series resonance circuit 3 is set to a value that resonates at the second harmonic including the series induction component of the internal impedance of the amplification element 1, or the value of the internal drain inductance of the amplification element 1. Second including
The impedance value of the parallel resonance circuit 4 is set to a value that resonates with the harmonic, and the impedance value of the parallel resonance circuit 4 including the reactance component of the series resonance circuit 3 and the parallel capacitance component of the internal impedance of the amplification element 1 resonates with the fundamental wave and the third harmonic. To set the value to
The value including the reactance component of the series resonance circuit 3, the internal drain source capacitor and the internal drain inductance of the amplification element 1 is set to a value that resonates with the fundamental wave and the third harmonic.
【００２０】また、並列共振回路４を構成する誘導素子
を容量素子を介して高周波的に接地するとともに、この
誘導素子と容量素子との接続点に電源を接続したり、直
列共振回路３を構成する誘導素子と容量素子の接続点
に、電源を接続したりすれば、共振回路を通じて電源を
供給することができる。なお、基本波整合回路２中の誘
導素子２Ａと並列に容量素子を接続して、第３高調波に
共振されるようにすることもできる。Further, the inductive element constituting the parallel resonant circuit 4 is grounded in a high frequency manner via the capacitive element, and a power source is connected to the connection point between the inductive element and the capacitive element, or the series resonant circuit 3 is constructed. If a power supply is connected to the connection point between the inductive element and the capacitive element, the power can be supplied through the resonance circuit. It is also possible to connect a capacitive element in parallel with the inductive element 2A in the fundamental wave matching circuit 2 so as to resonate with the third harmonic.
【００２１】[0021]
【実施例】以下、図面を参照して本発明の実施例を説明
する。 （ａ）第１実施例の説明 図２は本発明の一実施例を示す電気回路図であるが、こ
の図２に示す高周波増幅器は、増幅素子としての電界効
果トランジスタ（ＦＥＴ）１に直列に接続された基本波
整合回路２を介して負荷に電力を供給するもので、更に
は基本整合回路２に影響を与えない第２高調波，第３高
調波処理回路を実現するものである。Embodiments of the present invention will be described below with reference to the drawings. (A) Description of First Embodiment FIG. 2 is an electric circuit diagram showing an embodiment of the present invention. The high frequency amplifier shown in FIG. 2 is connected in series with a field effect transistor (FET) 1 as an amplification element. The electric power is supplied to the load through the connected fundamental wave matching circuit 2, and the second and third harmonic wave processing circuits which do not affect the fundamental matching circuit 2 are realized.
【００２２】このために、まず、高周波増幅器における
基本波整合回路２には、ＦＥＴ１と直列に接続された誘
導素子（インダクタ）２Ａが設けられている。なお、２
Ｂはその他の基本波整合回路部分であり、例えば一端を
接地されたキャパシタやこのキャパシタに加えてライン
に直列に挿入されたキャパシタあるいはラインに直列に
挿入されたインダクタを有する回路として構成される。For this reason, first, the fundamental wave matching circuit 2 in the high frequency amplifier is provided with an inductive element (inductor) 2A connected in series with the FET1. In addition, 2
Reference numeral B denotes another fundamental wave matching circuit portion, which is configured as a circuit having, for example, a capacitor whose one end is grounded, a capacitor which is serially inserted in a line in addition to this capacitor, or an inductor which is serially inserted in a line.
【００２３】また、ＦＥＴ１の出力側に発生する信号の
高調波のうちの第２高調波に共振すべく、相互に直列に
接続されたインダクタ３Ａとキャパシタ３Ｂとからなる
直列共振回路３が、ＦＥＴ１の出力端に一端（インダク
タ３Ａ側）を接続されるとともに他端（キャパシタ３Ｂ
側）を接地されることにより、ＦＥＴ１の出力端に対し
並列に接続されている。Further, in order to resonate with the second harmonic of the harmonics of the signal generated at the output side of the FET1, the series resonant circuit 3 including the inductor 3A and the capacitor 3B connected in series to each other is the FET1. One end (inductor 3A side) is connected to the output end of
The output side of the FET1 is connected in parallel by grounding the side).
【００２４】さらに、ＦＥＴ１の出力側に発生する信号
の基本波及び第３高調波に直列共振回路３と共に共振す
べく、相互に並列に接続されたインダクタ４Ａとキャパ
シタ４Ｂとからなる並列共振回路４が、ＦＥＴ１の出力
端に一端を接続されるとともに他端を接地されることに
より、ＦＥＴ１の出力端及び直列共振回路３に対し並列
に接続されている。Further, in order to resonate with the series resonance circuit 3 to the fundamental wave and the third harmonic of the signal generated at the output side of the FET 1, the parallel resonance circuit 4 including the inductor 4A and the capacitor 4B connected in parallel with each other. Is connected in parallel to the output end of the FET 1 and the series resonance circuit 3 by connecting one end to the output end of the FET 1 and grounding the other end.
【００２５】なお、図２中の符号５はＦＥＴ１の入力バ
イアス回路、６はＦＥＴ１の出力バイアス回路、７は入
力バイアス回路５の電源端子（入力電源端子）、８は出
力バイアス回路６の電源端子（出力電源端子）である。
このように基本波よりも高い周波数で高インピーダンス
を実現するために、基本波整合回路２に、ラインに直列
に誘導素子（インダクタ）２Ａが挿入されているが、第
３高調波は基本波に比較して周波数が高いので、インピ
ーダンス値の小さな誘導素子２Ａでも十分実用的な高イ
ンピーダンスを実現することができる。In FIG. 2, reference numeral 5 is an input bias circuit of the FET 1, 6 is an output bias circuit of the FET 1, 7 is a power supply terminal (input power supply terminal) of the input bias circuit 5, and 8 is a power supply terminal of the output bias circuit 6. (Output power supply terminal).
In order to realize a high impedance at a frequency higher than the fundamental wave, an inductive element (inductor) 2A is inserted in series with the fundamental wave matching circuit 2, but the third harmonic wave is changed to the fundamental wave. Since the frequency is high in comparison, a sufficiently practical high impedance can be realized even with the inductive element 2A having a small impedance value.
【００２６】さらに、第２高調波の短絡条件は直列共振
回路３によって実現している。また、第２高調波直列共
振回路３のインピーダンスは基本波では容量性、３倍波
では誘導性になるので、直列共振回路３に、基本波と第
３高調波で直列共振回路３と共に並列共振する回路４を
接続することにより、これよりあとに接続された基本波
整合回路２に影響を与えないようにすることができる。Further, the short circuit condition of the second harmonic is realized by the series resonance circuit 3. Further, since the impedance of the second harmonic series resonance circuit 3 becomes capacitive for the fundamental wave and inductive for the third harmonic wave, the series resonance circuit 3 causes parallel resonance with the series resonance circuit 3 at the fundamental wave and the third harmonic wave. It is possible to prevent the fundamental wave matching circuit 2 connected after that from being affected by connecting the circuit 4 for connecting.
【００２７】またさらに、並列共振回路４のインピーダ
ンスは低い周波数では誘導性を示し、高い周波数では容
量性を示すので、直列共振回路３と並列にこの並列共振
回路４を接続して、並列共振回路４を構成する素子４
Ａ，４Ｂの値を基本波と第３高調波に並列共振するよう
に設定することにより、基本波整合回路２に影響を与え
ない回路を実現することができるのである。Furthermore, since the impedance of the parallel resonance circuit 4 is inductive at low frequencies and is capacitive at high frequencies, the parallel resonance circuit 4 is connected in parallel with the series resonance circuit 3 and the parallel resonance circuit 4 is connected. Element 4 constituting 4
By setting the values of A and 4B so as to resonate in parallel with the fundamental wave and the third harmonic, it is possible to realize a circuit that does not affect the fundamental wave matching circuit 2.
【００２８】すなわち、基本波では、直列共振回路３が
容量性、並列共振回路４が誘導性となって、これらで基
本波に共振する並列共振回路を構成する一方、第３高調
波では、直列共振回路３が誘導性、並列共振回路４が容
量性となって、これらで第３高調波に共振する並列共振
回路を構成し、更に整合回路２中の直列誘導素子２Ａに
よって、第３高調波のインピーダンスを大きく設定する
ことができるので、基本波整合回路２に影響を与えない
回路を実現することができるのである。That is, in the fundamental wave, the series resonance circuit 3 becomes capacitive, and the parallel resonance circuit 4 becomes inductive, thereby forming a parallel resonance circuit that resonates with the fundamental wave. The resonance circuit 3 becomes inductive, and the parallel resonance circuit 4 becomes capacitive to form a parallel resonance circuit that resonates at the third harmonic, and the series induction element 2A in the matching circuit 2 further causes the third harmonic to be generated. Since the impedance can be set to a large value, a circuit that does not affect the fundamental wave matching circuit 2 can be realized.
【００２９】このようにして、本高周波増幅器では、基
本波整合回路２に影響しない第２高調波短絡回路と第３
高調波開放回路を同時に実現することができ、これによ
り、設計の自由度の高い高効率な高周波増幅器を実現す
ることができ、更には基本波整合回路２に影響しないの
で、基本波整合回路２の調整も独立してすることがで
き、これにより特性の良い高周波増幅器を提供すること
ができる。As described above, in the present high frequency amplifier, the second harmonic short circuit and the third harmonic short circuit which do not affect the fundamental wave matching circuit 2 are provided.
A harmonic open circuit can be realized at the same time, which makes it possible to realize a high-efficiency high-frequency amplifier with a high degree of freedom in design, and further, since it does not affect the fundamental wave matching circuit 2, the fundamental wave matching circuit 2 Can be adjusted independently, and a high-frequency amplifier with excellent characteristics can be provided.
【００３０】ところで、より高い効率の高周波増幅器を
実現するためには、実際の増幅素子（ＦＥＴ）１の内部
インピーダンスを考慮して、外部に接続する高調波処理
回路を実現する必要がある。このための例が、図３に示
すものであるが、この高周波増幅器は特に第２高調波の
ためのものである。さて、増幅素子１を等価な電流源１
Ｃと考えた場合、増幅素子１の出力リードや出力ワイヤ
等の誘導成分が等価直列誘導成分１Ａとなる。従って、
直列共振回路３のインピーダンス値を、この等価直列誘
導成分１Ａを含めて第２高調波に共振するような値に設
定すれば、正確なインピーダンス設定が可能となり、よ
り高い効率の高周波増幅器を実現することができる。な
お、図３中の１Ｂは増幅素子１の内部サセプタンス（内
部容量成分）である。In order to realize a high efficiency high frequency amplifier, it is necessary to realize a harmonic processing circuit connected to the outside in consideration of the actual internal impedance of the amplifying element (FET) 1. An example for this is shown in FIG. 3, this high frequency amplifier being specifically for the second harmonic. Now, the amplification element 1 is equivalent to the current source 1
When considered as C, the inductive component such as the output lead and the output wire of the amplifying element 1 becomes the equivalent series inductive component 1A. Therefore,
If the impedance value of the series resonance circuit 3 is set to a value that resonates with the second harmonic including the equivalent series induction component 1A, accurate impedance setting becomes possible and a high efficiency high frequency amplifier is realized. be able to. In addition, 1B in FIG. 3 is an internal susceptance (internal capacitance component) of the amplification element 1.
【００３１】また、本実施例のように、増幅素子１がＦ
ＥＴの場合は、増幅素子の等価回路を図４のように表す
ことができるが、この図４からもわかるように、増幅素
子内部の直列誘導成分はドレインインダクタンス１ａと
して表現できるので、そのインピーダンス値を実験や理
論計算などによって求めて、その値を含めて直列共振回
路３を第２高調波に共振するような値に設定すれば、や
はり正確なインピーダンス設定が可能となり、これによ
り、より高い効率の高周波増幅器を実現できる。なお、
図４中の１ｂは増幅素子１のドレインソースキャパシタ
であり、１ｃは電流源である。Further, as in this embodiment, the amplifying element 1 is F
In the case of ET, the equivalent circuit of the amplifying element can be represented as shown in FIG. 4, but as can be seen from FIG. 4, the series inductive component inside the amplifying element can be represented as the drain inductance 1a, so its impedance value Is obtained by experiment or theoretical calculation, and if the value including the value is set so as to resonate the series resonant circuit 3 with the second harmonic, accurate impedance setting becomes possible, which results in higher efficiency. The high frequency amplifier can be realized. In addition,
In FIG. 4, 1b is a drain-source capacitor of the amplification element 1, and 1c is a current source.
【００３２】さらに、より高い効率の高周波増幅器を実
現するためには、図５に示すように、増幅素子１の内部
インピーダンスを考慮して直列共振回路３に並列接続さ
れる並列共振回路４のインピーダンス値を決定する必要
がある。すなわち、増幅素子１を等価な電流源１Ｃと考
えた場合、内部容量成分１Ｂと直列誘導成分１Ａを考慮
して、並列共振回路４のインピーダンス値を決定するの
である。このようにすれば、より高い効率の高周波増幅
器を実現することができる。Further, in order to realize a high efficiency high frequency amplifier, as shown in FIG. 5, the impedance of the parallel resonance circuit 4 connected in parallel with the series resonance circuit 3 is taken into consideration in consideration of the internal impedance of the amplification element 1. You need to determine the value. That is, when the amplifier element 1 is considered as the equivalent current source 1C, the impedance value of the parallel resonant circuit 4 is determined in consideration of the internal capacitance component 1B and the series induction component 1A. By doing so, it is possible to realize a high efficiency high frequency amplifier.
【００３３】また、本実施例のように、増幅素子１がＦ
ＥＴの場合は、図６に示すうよに、内部容量成分はドレ
インソースキャパシタ１ｂとして、増幅素子内部の直列
誘導成分はドレインインダクタンス１ａとして表現でき
るので、その値も含めて直列共振回路３に並列接続され
る並列共振回路４のインピーダンス値を決定する。な
お、図６中の１ｃは電流源である。このようにしても、
より高い効率の高周波増幅器を実現することができる。Further, as in this embodiment, the amplifying element 1 is F
In the case of ET, as shown in FIG. 6, the internal capacitance component can be expressed as the drain-source capacitor 1b, and the series induction component inside the amplification element can be expressed as the drain inductance 1a. The impedance value of the connected parallel resonance circuit 4 is determined. In addition, 1c in FIG. 6 is a current source. Even with this,
A high efficiency high frequency amplifier can be realized.
【００３４】もちろん、直列共振回路３と内部インピー
ダンスとの関係と並列共振回路４と内部インピーダンス
との関係との両方を一般の増幅素子１について考慮する
こともできる。この場合は、図７のようになるが、直列
共振回路３のインピーダンス値は、等価直列誘導成分１
Ａを含めて第２高調波に共振するような値に設定し、基
本波及び第３高調波については内部容量成分１Ｂと直列
誘導成分１Ａと直列共振回路３のリアクタンス成分とを
考慮して、直列共振回路３に並列接続される並列共振回
路４のインピーダンス値を決定するのである。なお、図
７中の１Ｃは電流源である。このようにすれば、更に高
い効率な高周波増幅器を実現することができる。Of course, both the relationship between the series resonant circuit 3 and the internal impedance and the relationship between the parallel resonant circuit 4 and the internal impedance can be considered for the general amplifying element 1. In this case, as shown in FIG. 7, the impedance value of the series resonance circuit 3 is equal to the equivalent series induction component 1
A value including A is set to resonate with the second harmonic, and regarding the fundamental wave and the third harmonic, the internal capacitance component 1B, the series induction component 1A, and the reactance component of the series resonance circuit 3 are taken into consideration, The impedance value of the parallel resonance circuit 4 connected in parallel to the series resonance circuit 3 is determined. In addition, 1C in FIG. 7 is a current source. By doing so, it is possible to realize a high-efficiency high-frequency amplifier.
【００３５】また、本実施例のように、増幅素子１がＦ
ＥＴの場合について、直列共振回路３と内部インピーダ
ンスとの関係と並列共振回路４と内部インピーダンスと
の関係との両方を考慮する場合は、図８に示すように、
直列共振回路３のインピーダンス値をドレインインダク
タンス１ａと共に第２高調波に共振するような値に設定
し、直列共振回路３と共に働く並列共振回路４の値は、
直列共振回路３のリアクタンス成分とドレインソースキ
ャパシタ１ｂとドレインインダクタンス１ａの値も含め
て決定する。なお、図８中の１ｃは電流源である。この
ようにしても、更に高い効率の高周波増幅器を実現する
ことができる。Further, as in this embodiment, the amplifying element 1 is F
In the case of ET, when considering both the relationship between the series resonant circuit 3 and the internal impedance and the relationship between the parallel resonant circuit 4 and the internal impedance, as shown in FIG.
The impedance value of the series resonance circuit 3 is set to a value that resonates with the drain inductance 1a at the second harmonic, and the value of the parallel resonance circuit 4 that works together with the series resonance circuit 3 is
The reactance component of the series resonance circuit 3 and the values of the drain source capacitor 1b and the drain inductance 1a are also determined. In addition, 1c in FIG. 8 is a current source. Even in this case, a high efficiency high frequency amplifier can be realized.
【００３６】なお、図４〜８中、図２と同じ符号は同様
の部分を示す。 （ｂ）第２実施例の説明 この第２実施例は、出力バイアスを並列共振回路４を通
じて供給する場合についての実施例である。即ち、図９
に示すように、並列共振回路４の誘導成分４Ａを利用し
て、一端を直接接地するのではなく、比較的大きな容量
素子４Ｃ（この容量素子４Ｃは高周波短絡用であり、そ
の容量値は例えば２．５Ｇｚ帯域で１０ｐＦ程度のもの
が使用される）を介して高周波的に接地しており、これ
により、他に出力バイアス回路を設けなくても、並列共
振回路４の誘導成分４Ａと容量素子４Ｃの接続点に設け
られた出力電源端子８′から電源電圧を供給することが
可能となるのである。このようにすれば、並列共振回路
４とは別個に設けていた出力バイアス回路を並列共振回
路４で兼用できるので、回路の簡素化におおいに寄与す
る。4 to 8, the same symbols as those in FIG. 2 indicate the same parts. (B) Description of Second Embodiment This second embodiment is an embodiment of the case where the output bias is supplied through the parallel resonant circuit 4. That is, FIG.
As shown in FIG. 4, the inductive component 4A of the parallel resonant circuit 4 is used, and one end is not directly grounded, but a relatively large capacitance element 4C (this capacitance element 4C is for high frequency short circuit, and its capacitance value is, for example, It is grounded in a high frequency through (in the 2.5 Gz band, about 10 pF is used), so that the inductive component 4A of the parallel resonant circuit 4 and the capacitive element can be provided without providing another output bias circuit. The power supply voltage can be supplied from the output power supply terminal 8'provided at the connection point of 4C. In this way, the parallel resonant circuit 4 can also serve as the output bias circuit provided separately from the parallel resonant circuit 4, which greatly contributes to simplification of the circuit.
【００３７】また、出力バイアスを供給する場合、図９
の例以外でも、直列共振回路３の容量成分３Ｂがこの容
量成分３Ｂと誘導成分３Ａとの接続点に何かを接続して
も影響が無い程度に大きければ、並列共振回路４の側で
はなく、図１０に示すように、直列共振回路３の誘導成
分３Ａと容量成分３Ｂとの接続点に出力電源端子８′を
設けて、この出力電源端子８′から電源電圧を供給する
ことができる。このようにすれば、直列共振回路３とは
別個に設けていた出力バイアス回路を直列共振回路３で
兼用できるので、やはり回路の簡素化におおいに寄与す
る。Further, when the output bias is supplied, FIG.
Other than the above example, if the capacitance component 3B of the series resonance circuit 3 is large enough to have no effect even if something is connected to the connection point between the capacitance component 3B and the inductive component 3A, it is not on the parallel resonance circuit 4 side. As shown in FIG. 10, an output power supply terminal 8'can be provided at a connection point between the inductive component 3A and the capacitive component 3B of the series resonance circuit 3 and a power supply voltage can be supplied from the output power supply terminal 8 '. By doing so, the output bias circuit provided separately from the series resonance circuit 3 can also be used as the series resonance circuit 3, which also greatly contributes to simplification of the circuit.
【００３８】なお、図９，１０中、図２と同じ符号は同
様の部分を示す。 （ｃ）第３実施例の説明 一般に第３高調波は周波数が高いので、整合回路２中の
インダクタは数ｎＨの大きさであれば十分に実用になる
が、より大きな開放負荷を実現するためには、図１１に
示すように、インダクタンス２Ａに並列に第３高調波に
共振するキャパシタ２Ｃを接続して、インピーダンスを
大きくすればよい。この場合は、基本波整合回路２の設
計の自由度は下がってしまうが、本発明によらない従来
の場合に比較すると、設計自由度は大きくなるという利
点がある。また、第３高調波に対するインピーダンスを
実現できるので、より高効率を達成することができる。In FIGS. 9 and 10, the same symbols as those in FIG. 2 indicate the same parts. (C) Description of Third Embodiment In general, the third harmonic has a high frequency, and therefore the inductor in the matching circuit 2 is sufficiently practical if it has a size of several nH, but in order to realize a larger open load. As shown in FIG. 11, a capacitor 2C that resonates with the third harmonic may be connected in parallel to the inductance 2A to increase the impedance. In this case, the degree of freedom in designing the fundamental wave matching circuit 2 is lowered, but there is an advantage that the degree of freedom in design is increased as compared with the conventional case not according to the present invention. Further, since impedance for the third harmonic can be realized, higher efficiency can be achieved.
【００３９】なお、図１１中、図２と同じ符号は同様の
部分を示す。In FIG. 11, the same symbols as those in FIG. 2 indicate the same parts.
【００４０】[0040]
【発明の効果】以上詳述したように、本発明の高周波増
幅器によれば、基本波整合回路に、増幅素子と直列に接
続された誘導素子が設けられるとともに、第２高調波に
共振する直列共振回路と、直列共振回路と共に基本波及
び第３高調波に共振する並列共振回路とが設けられてい
るので、基本波整合回路に影響しない第２高調波短絡回
路と第３高調波開放回路が同時に実現可能となり、これ
により、設計の自由度の高い高効率な増幅器を得ること
ができ、また、基本波整合回路の調整も独立してできる
ようになるため、特性の良い増幅器が実現可能となる利
点がある。As described in detail above, according to the high frequency amplifier of the present invention, the fundamental wave matching circuit is provided with the inductive element connected in series with the amplifying element, and is connected in series with the second harmonic. Since the resonant circuit and the parallel resonant circuit that resonates with the fundamental wave and the third harmonic together with the series resonant circuit are provided, the second harmonic short circuit and the third harmonic open circuit that do not affect the fundamental matching circuit are provided. At the same time, it is possible to obtain a highly efficient amplifier with a high degree of freedom in design, and because the fundamental wave matching circuit can be adjusted independently, an amplifier with good characteristics can be realized. There are advantages.
【００４１】また、直列共振回路のインピーダンス値
を、増幅素子の内部インピーダンスの直列誘導成分を含
めて第２高調波で共振する値に設定したり、増幅素子の
内部ドレインインダクタンスの値を含めて第２高調波で
共振する値に設定したり、並列共振回路のインピーダン
ス値を、直列共振回路のリアクタンス成分と増幅素子の
内部インピーダンスの並列容量成分とを含めて基本波及
び第３高調波で共振する値に設定したり、直列共振回路
のリアクタンス成分と増幅素子の内部ドレインソースキ
ャパシタと内部ドレインインダクタンスとを含めて基本
波及び第３高調波で共振する値に設定したりすることに
より、より高い効率の高周波増幅器を実現できる利点が
ある。Further, the impedance value of the series resonance circuit is set to a value that resonates at the second harmonic including the series induction component of the internal impedance of the amplification element, or the impedance value of the internal drain inductance of the amplification element is included. Set to a value that resonates with two harmonics, or resonate the impedance value of the parallel resonant circuit with the fundamental wave and the third harmonic, including the reactance component of the series resonant circuit and the parallel capacitance component of the internal impedance of the amplification element. Higher efficiency can be achieved by setting a value or a value that causes resonance with the fundamental wave and the third harmonic including the reactance component of the series resonance circuit, the internal drain source capacitor of the amplification element, and the internal drain inductance. There is an advantage that the high frequency amplifier can be realized.
【００４２】さらに、直列共振回路のインピーダンス値
を、増幅素子の内部インピーダンスの直列誘導成分を含
めて第２高調波で共振する値に設定するともに、並列共
振回路のインピーダンス値を、直列共振回路のリアクタ
ンス成分と増幅素子の内部インピーダンスの並列容量成
分とを含めて基本波及び第３高調波で共振する値に設定
したり、更には直列共振回路のインピーダンス値を、増
幅素子の内部ドレインインダクタンスを含めて第２高調
波で共振する値に設定するとともに、並列共振回路のイ
ンピーダンス値を、直列共振回路のリアクタンス成分と
増幅素子の内部ドレインソースキャパシタと内部ドレイ
ンインダクタンスとを含めて基本波及び第３高調波で共
振する値に設定することにより、更に高い効率の高周波
増幅器を実現できる利点がある。Furthermore, the impedance value of the series resonance circuit is set to a value that resonates at the second harmonic including the series induction component of the internal impedance of the amplification element, and the impedance value of the parallel resonance circuit is set to that of the series resonance circuit. The reactance component and the parallel capacitance component of the internal impedance of the amplification element are set to a value that resonates at the fundamental wave and the third harmonic, and the impedance value of the series resonance circuit is set to include the internal drain inductance of the amplification element. Is set to a value that resonates at the second harmonic, and the impedance value of the parallel resonant circuit is adjusted to include the reactance component of the series resonant circuit, the internal drain source capacitor and the internal drain inductance of the amplifying element, and the third harmonic. By setting the value to resonate with the wave, a high efficiency high frequency amplifier can be realized. There is an advantage.
【００４３】また、並列共振回路を構成する誘導素子が
容量素子を介して高周波的に接地されるとともに、誘導
素子と容量素子との接続点に電源を接続したり、直列共
振回路を構成する誘導素子と容量素子の接続点に、電源
を接続したりすることにより、回路の簡素化を図れる利
点がある。さらに、基本波整合回路中の該誘導素子と並
列に、第３高調波に共振する容量素子を接続することに
より、更に第３高調波に対するインピーダンスを実現で
きるので、より高効率を達成することができ、また、設
計自由度が大きくなるという利点がある。In addition, the inductive element forming the parallel resonant circuit is grounded in high frequency through the capacitive element, and a power source is connected to the connection point between the inductive element and the capacitive element, or an inductive element forming the series resonant circuit. There is an advantage that the circuit can be simplified by connecting a power source to the connection point between the element and the capacitive element. Furthermore, by connecting a capacitive element that resonates with the third harmonic in parallel with the inductive element in the fundamental wave matching circuit, an impedance with respect to the third harmonic can be realized, so that higher efficiency can be achieved. There is an advantage that it is possible and the degree of freedom of design is increased.
【図１】本発明の原理を説明する電気回路図である。FIG. 1 is an electric circuit diagram illustrating the principle of the present invention.
【図２】本発明の第１実施例を示す電気回路図である。FIG. 2 is an electric circuit diagram showing a first embodiment of the present invention.
【図３】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 3 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図４】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 4 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図５】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 5 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図６】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 6 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図７】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 7 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図８】本発明の第１実施例の変形例を示す電気回路図
である。FIG. 8 is an electric circuit diagram showing a modification of the first embodiment of the present invention.
【図９】本発明の第２実施例を示す電気回路図である。FIG. 9 is an electric circuit diagram showing a second embodiment of the present invention.
【図１０】本発明の第２実施例の変形例を示す電気回路
図である。FIG. 10 is an electric circuit diagram showing a modification of the second embodiment of the present invention.
【図１１】本発明の第３実施例を示す電気回路図であ
る。FIG. 11 is an electric circuit diagram showing a third embodiment of the present invention.
【図１２】第１従来例を示す電気回路図である。FIG. 12 is an electric circuit diagram showing a first conventional example.
【図１３】第２従来例を示す電気回路図である。FIG. 13 is an electric circuit diagram showing a second conventional example.
【図１４】第３従来例を示す電気回路図である。FIG. 14 is an electric circuit diagram showing a third conventional example.
１ 増幅素子としての電界効果トランジスタ（ＦＥＴ） １Ａ 直列誘導成分 １Ｂ 内部容量成分 １ａ ドレインインダクタンス １ｂ ドレインソースキャパシタ ２ 基本波整合回路 ２Ａ 誘導素子（インダクタ） ２Ｂ その他の基本波整合回路部分 １Ｃ，１ｃ 電流源 ２Ｃ キャパシタ ３ 直列共振回路 ３Ａ インダクタ ３Ｂ キャパシタ ４ 並列共振回路 ４Ａ インダクタ ４Ｂ キャパシタ ４Ｃ 高周波短絡用容量素子 ５ 入力バイアス回路 ６ 出力バイアス回路 ７ 入力電源端子 ８，８′ 出力電源端子 １０１ 増幅素子（電界効果トランジスタ（ＦＥＴ）） １０２ 伝送線路 １０３ 基本波整合回路 １０４ 並列共振回路 １０５ 入力バイアス回路 １０６ 出力バイアス回路 １０７ 入力電源端子 １０８ 出力電源端子 １０９ 並列共振回路 １０９ａ 誘導素子 １１０ 直列共振回路 １１１，１１２ 伝送線路 １１３，１１４ 直列共振回路 1 Field Effect Transistor (FET) as Amplifier Element 1A Series Induction Component 1B Internal Capacitance Component 1a Drain Inductance 1b Drain Source Capacitor 2 Fundamental Wave Matching Circuit 2A Inductive Element (Inductor) 2B Other Fundamental Wave Matching Circuit Part 1C, 1c Current Source 2C capacitor 3 series resonance circuit 3A inductor 3B capacitor 4 parallel resonance circuit 4A inductor 4B capacitor 4C high frequency short circuit capacitance element 5 input bias circuit 6 output bias circuit 7 input power supply terminal 8, 8'output power supply terminal 101 amplification element (field effect transistor (FET) 102 transmission line 103 fundamental wave matching circuit 104 parallel resonance circuit 105 input bias circuit 106 output bias circuit 107 input power supply terminal 108 output power supply terminal 109 parallel resonance circuit 109a inductor Child 110 Series resonance circuit 111,112 Transmission line 113,114 Series resonance circuit
Claims (10)
回路を介して負荷に電力を供給する高周波増幅器におい
て、 該基本波整合回路に、該増幅素子と直列に接続された誘
導素子が設けられるとともに、 該増幅素子の出力端に一端を接続されるとともに他端を
接地されることにより、該増幅素子の出力端に対し並列
に接続されて、該増幅素子の出力側に発生する信号の第
２高調波に共振する直列共振回路と、 該増幅素子の出力端に一端を接続されるとともに他端を
接地されることにより、該増幅素子の出力端及び該直列
共振回路に対し並列に接続されて、該直列共振回路と共
に該増幅素子の出力側に発生する信号の基本波及び第３
高調波に共振する並列共振回路とが設けられたことを特
徴とする、高周波増幅器。1. A high frequency amplifier for supplying electric power to a load through a fundamental wave matching circuit connected in series to an amplifying element, wherein the fundamental wave matching circuit is provided with an inductive element connected in series with the amplifying element. The output terminal of the amplification element is connected to the output terminal of the amplification element by connecting one end to the output terminal of the amplification element and grounding the other end. A series resonance circuit that resonates with the second harmonic, and one end of which is connected to the output end of the amplification element and the other end of which is connected to the output end of the amplification element and the series resonance circuit in parallel. And the fundamental wave of the signal generated at the output side of the amplification element together with the series resonance circuit and the third
A high-frequency amplifier, comprising: a parallel resonance circuit that resonates with harmonics.
該増幅素子の出力端から入力側を見たときに見込まれる
該増幅素子の内部インピーダンスの直列誘導成分を含め
て該第２高調波で共振する値に設定されていることを特
徴とする、請求項１記載の高周波増幅器。2. The impedance value of the series resonant circuit is
It is set to a value that resonates at the second harmonic, including a series induction component of the internal impedance of the amplification element that is expected when the input side is viewed from the output end of the amplification element. The high frequency amplifier according to item 1.
成されるとともに、 該直列共振回路のインピーダンス値が、該増幅素子の内
部ドレインインダクタンスの値を含めて該第２高調波で
共振する値に設定されていることを特徴とする、請求項
１記載の高周波増幅器。3. The amplification element is composed of a field effect transistor, and the impedance value of the series resonance circuit is set to a value that resonates at the second harmonic including the value of the internal drain inductance of the amplification element. The high frequency amplifier according to claim 1, wherein the high frequency amplifier is provided.
該直列共振回路のリアクタンス成分と該増幅素子の出力
端から入力側を見たときに見込まれる該増幅素子の内部
インピーダンスの並列容量成分とを含めて該基本波及び
該第３高調波で共振する値に設定されていることを特徴
とする、請求項１記載の高周波増幅器。4. The impedance value of the parallel resonant circuit is
Resonance occurs in the fundamental wave and the third harmonic, including the reactance component of the series resonance circuit and the parallel capacitance component of the internal impedance of the amplification element that is expected when the input side is viewed from the output end of the amplification element. The high frequency amplifier according to claim 1, wherein the high frequency amplifier is set to a value.
成されるとともに、 該並列共振回路のインピーダンス値が、該直列共振回路
のリアクタンス成分と該増幅素子の内部ドレインソース
キャパシタと内部ドレインインダクタンスとを含めて該
基本波及び該第３高調波で共振する値に設定されている
ことを特徴とする、請求項１記載の高周波増幅器。5. The amplification element is composed of a field effect transistor, and the impedance value of the parallel resonance circuit includes a reactance component of the series resonance circuit, an internal drain source capacitor and an internal drain inductance of the amplification element. 2. The high frequency amplifier according to claim 1, wherein the high frequency amplifier is set to a value that resonates with the fundamental wave and the third harmonic.
該増幅素子の出力端から入力側を見たときに見込まれる
該増幅素子の内部インピーダンスの直列誘導成分を含め
て該第２高調波で共振する値に設定されるともに、 該並列共振回路のインピーダンス値が、該直列共振回路
のリアクタンス成分と該増幅素子の出力端から入力側を
見たときに見込まれる該増幅素子の内部インピーダンス
の並列容量成分とを含めて該基本波及び該第３高調波で
共振する値に設定されていることを特徴とする、請求項
１記載の高周波増幅器。6. The impedance value of the series resonant circuit is
The impedance of the parallel resonant circuit is set to a value that resonates at the second harmonic, including the series induction component of the internal impedance of the amplifier that is expected when the input side is viewed from the output end of the amplifier. The value including the reactance component of the series resonance circuit and the parallel capacitance component of the internal impedance of the amplification element that is expected when the input side is viewed from the output end of the amplification element, the fundamental wave and the third harmonic wave. 2. The high frequency amplifier according to claim 1, wherein the high frequency amplifier is set to a value that resonates with.
成され、 且つ、 該直列共振回路のインピーダンス値が、該増幅素子の内
部ドレインインダクタンスを含めて該第２高調波で共振
する値に設定されるとともに、 該並列共振回路のインピーダンス値が、該直列共振回路
のリアクタンス成分と該増幅素子の内部ドレインソース
キャパシタと内部ドレインインダクタンスとを含めて該
基本波及び該第３高調波で共振する値に設定されている
ことを特徴とする、請求項１記載の高周波増幅器。7. The amplification element is composed of a field effect transistor, and the impedance value of the series resonance circuit is set to a value that resonates at the second harmonic including the internal drain inductance of the amplification element. At the same time, the impedance value of the parallel resonant circuit is set to a value that resonates at the fundamental wave and the third harmonic, including the reactance component of the series resonant circuit, the internal drain source capacitor and the internal drain inductance of the amplification element. The high frequency amplifier according to claim 1, wherein the high frequency amplifier is provided.
量素子を介して高周波的に接地されるとともに、該誘導
素子と該容量素子との接続点に電源が接続されているこ
とを特徴とする、請求項１〜請求項７のいずれかに記載
の高周波増幅器。8. An inductive element forming the parallel resonant circuit is grounded in a high frequency manner via a capacitive element, and a power source is connected to a connection point between the inductive element and the capacitive element. The high frequency amplifier according to any one of claims 1 to 7.
量素子の接続点に、電源が接続されていることを特徴と
する、請求項１〜請求項７のいずれかに記載の高周波増
幅器。9. The high-frequency amplifier according to claim 1, wherein a power source is connected to a connection point between the inductive element and the capacitive element that form the series resonant circuit.
列に、第３高調波に共振する容量素子が接続されている
ことを特徴とする、請求項１〜請求項９のいずれかに記
載の高周波増幅器。10. A capacitive element that resonates with a third harmonic is connected in parallel with the inductive element in the fundamental wave matching circuit, according to any one of claims 1 to 9. The described high-frequency amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28559394A JPH08148949A (en) | 1994-11-18 | 1994-11-18 | High frequency amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28559394A JPH08148949A (en) | 1994-11-18 | 1994-11-18 | High frequency amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08148949A true JPH08148949A (en) | 1996-06-07 |
Family
ID=17693565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28559394A Withdrawn JPH08148949A (en) | 1994-11-18 | 1994-11-18 | High frequency amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08148949A (en) |
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| JP2016533688A (en) * | 2013-09-12 | 2016-10-27 | ドックオン エージー | A logarithmic sense amplifier system for use as a sensitive selective receiver without frequency conversion. |
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| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
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| US10862473B2 (en) | 2018-03-28 | 2020-12-08 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| JP2020123919A (en) * | 2019-01-31 | 2020-08-13 | 富士通株式会社 | Amplifier circuit and amplifier |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
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