AU2001243426A1 - Electronic switch - Google Patents

Electronic switch

Info

Publication number
AU2001243426A1
AU2001243426A1 AU2001243426A AU4342601A AU2001243426A1 AU 2001243426 A1 AU2001243426 A1 AU 2001243426A1 AU 2001243426 A AU2001243426 A AU 2001243426A AU 4342601 A AU4342601 A AU 4342601A AU 2001243426 A1 AU2001243426 A1 AU 2001243426A1
Authority
AU
Australia
Prior art keywords
electronic switch
switch
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001243426A
Inventor
Shuyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Alpha Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpha Industries Inc filed Critical Alpha Industries Inc
Publication of AU2001243426A1 publication Critical patent/AU2001243426A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
AU2001243426A 2000-03-03 2001-03-02 Electronic switch Abandoned AU2001243426A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18688100P 2000-03-03 2000-03-03
US60186881 2000-03-03
PCT/US2001/007029 WO2001067602A2 (en) 2000-03-03 2001-03-02 Electronic switch

Publications (1)

Publication Number Publication Date
AU2001243426A1 true AU2001243426A1 (en) 2001-09-17

Family

ID=22686656

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001243426A Abandoned AU2001243426A1 (en) 2000-03-03 2001-03-02 Electronic switch

Country Status (3)

Country Link
US (1) US20010040479A1 (en)
AU (1) AU2001243426A1 (en)
WO (1) WO2001067602A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
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JP2003086767A (en) * 2001-09-14 2003-03-20 Matsushita Electric Ind Co Ltd Semiconductor device
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7092677B1 (en) 2002-09-05 2006-08-15 Analog Devices, Inc. 2V SPDT switch for high power RF wireless applications
US6730953B2 (en) * 2002-09-13 2004-05-04 Mia-Com, Inc. Apparatus, methods and articles of manufacture for a low control voltage switch
US6803680B2 (en) * 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
US6900711B2 (en) * 2002-09-30 2005-05-31 Agilent Technologies, Inc. Switching system
JP3902111B2 (en) * 2002-10-21 2007-04-04 新日本無線株式会社 Switch semiconductor integrated circuit
US7869770B2 (en) * 2002-12-17 2011-01-11 M/A-Com Technology Solutions Holdings, Inc. Apparatus, methods and articles of manufacture for a multi-band switch
CN100365932C (en) * 2002-12-17 2008-01-30 M/A-Com公司 Apparatus, methods and articles of manufacture for a multiband switch
US7250804B2 (en) * 2002-12-17 2007-07-31 M/A -Com, Inc. Series/shunt switch and method of control
US7515882B2 (en) * 2002-12-17 2009-04-07 Kelcourse Mark F Apparatus, methods and articles of manufacture for a multi-band switch
US20040196089A1 (en) * 2003-04-02 2004-10-07 O'donnell John J. Switching device
JP2005006072A (en) * 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd High frequency switch apparatus and semiconductor device
US7098755B2 (en) 2003-07-16 2006-08-29 Analog Devices, Inc. High power, high linearity and low insertion loss single pole double throw transmitter/receiver switch
JP2005348206A (en) * 2004-06-04 2005-12-15 Matsushita Electric Ind Co Ltd High frequency switch circuit and semiconductor device using the same
EP3570374B1 (en) 2004-06-23 2022-04-20 pSemi Corporation Integrated rf front end
US7498862B2 (en) * 2005-05-31 2009-03-03 Texas Instruments Incorporated Switch for handling terminal voltages exceeding control voltage
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
JP2007096609A (en) * 2005-09-28 2007-04-12 Nec Electronics Corp Semiconductor switch circuit device
US7492209B2 (en) * 2006-04-17 2009-02-17 Skyworks Solutions, Inc. High-frequency switching device with reduced harmonics
GB0612794D0 (en) * 2006-06-28 2006-08-09 Filtronic Compound Semiconduct A linear antenna switch arm and a field effect transistor
JP5151145B2 (en) * 2006-12-26 2013-02-27 ソニー株式会社 Switch circuit, variable capacitor circuit and its IC
US8492796B2 (en) 2007-03-13 2013-07-23 Infineon Technologies Ag MuGFET switch
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US20080272823A1 (en) * 2007-05-03 2008-11-06 Dsm Solutions, Inc. JFET Passgate Circuit and Method of Operation
EP2568608B1 (en) 2008-02-28 2014-05-14 Peregrine Semiconductor Corporation Method and Apparatus for use in Digitally Tuning a Capacitor in an Integrated Circuit Device
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
JP2011015289A (en) * 2009-07-03 2011-01-20 Renesas Electronics Corp Semiconductor integrated circuit device
US20110025404A1 (en) * 2009-07-29 2011-02-03 Qualcomm Incorporated Switches with variable control voltages
US9356144B1 (en) * 2009-08-11 2016-05-31 Rf Micro Devices, Inc. Remote gate protection diode for field effect transistors
US8054122B2 (en) * 2009-12-08 2011-11-08 STMicroelectronics Asia Pacific Pte Ltd (SG) Analog switch with a low flatness operating characteristic
US9673802B2 (en) 2010-04-27 2017-06-06 Qorvo Us, Inc. High power FET switch
US9209784B2 (en) 2010-04-27 2015-12-08 Rf Micro Devices, Inc. Switchable capacitive elements for programmable capacitor arrays
JP5632663B2 (en) * 2010-06-29 2014-11-26 ルネサスエレクトロニクス株式会社 Semiconductor device
US9484973B1 (en) * 2010-08-09 2016-11-01 Qorvo Us, Inc. Voltage equalization for stacked FETs in RF switches
CN101958702A (en) * 2010-08-16 2011-01-26 中国电子科技集团公司第五十五研究所 Radio-frequency power single-pole double-throw switch circuit
DE102010035278B4 (en) * 2010-08-24 2020-07-09 Hamilton Sundstrand Corporation Circuit for reducing AC leakage current
US9728532B2 (en) * 2011-04-13 2017-08-08 Qorvo Us, Inc. Clamp based ESD protection circuits
US9627883B2 (en) 2011-04-13 2017-04-18 Qorvo Us, Inc. Multiple port RF switch ESD protection using single protection structure
KR20130127782A (en) * 2012-05-15 2013-11-25 삼성전기주식회사 A switching circuit and a wireless communication system including the same
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
KR101730198B1 (en) * 2012-12-26 2017-04-25 삼성전기주식회사 Spdt switch circuit
US8964342B2 (en) * 2012-12-31 2015-02-24 Win Semiconductors Corp. Compound semiconductor ESD protection devices
US9041440B2 (en) * 2013-03-01 2015-05-26 Purdue Research Foundation Graphene-based frequency tripler
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10211830B2 (en) 2017-04-28 2019-02-19 Qualcomm Incorporated Shunt termination path
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10790307B2 (en) 2018-11-27 2020-09-29 Qorvo Us, Inc. Switch branch structure
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2770846B2 (en) * 1995-06-16 1998-07-02 日本電気株式会社 FET switch circuit
JPH11136111A (en) * 1997-10-30 1999-05-21 Sony Corp High frequency circuit

Also Published As

Publication number Publication date
US20010040479A1 (en) 2001-11-15
WO2001067602A3 (en) 2002-03-07
WO2001067602A2 (en) 2001-09-13

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