JPH1079467A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent leak of an RF signal from being generated by a method, wherein a semiconductor device is provided with a semiconductor substrate, a plurality of circuits provided on the substrate at a prescribed interval, and ground metal films provided on regions which are respectively held between the circuits on the substrate. SOLUTION: An LNA 1, an SW 3, an HPA 5, a control circuit 2 and a negative voltage-generating circuit 4 are arranged on a GaAs substrate 10 at prescribed intervals and, at the same time, the circuits 2 and 4 are arranged adjacent to each other, and ground metal films 6 are respectively arranged on the substrate 10 under a region held between these circuits 2 and 4 and the LNA 1 and the SW 3, and on the substrate 10 under a region held between the circuits 2 and 4 and the HPA 5. These films 6 are earthed, when the fellow circuits on this MMIC 100 are connected with each other or when the circuits on this MMIC 100 and other circuits than the MMIC 100 are connected with each other. Thereby the amount of isolation for the circuits is increased, and a leak of RF signal which is generated between the circuits can be prevented from being generated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device such as a GaAs IC used for mobile communication.

[0002]

2. Description of the Related Art FIG. 5 shows an MM using a conventional GaAs substrate.
1 is a plan view schematically showing a structure of an IC (Microwave monolithic integrated circuit), in which 50 denotes M
MIC 1 is a low noise amplifier (hereinafter referred to as LNA) operating at an output level of -30 to -60 dBm, and 2 is 0/3
The control circuit operates at a reference voltage of V, and its internal logic amplitude is about 0 / 0.6V. Reference numeral 3 denotes a switch (hereinafter referred to as SW), 4 denotes a negative voltage generating circuit that operates at an input signal level of -10 dBm, and 5 denotes a high output amplifier (hereinafter referred to as HPA) that operates at an output signal level of 20 to 22 dBm. , And the voltage amplitude is 0 / 6V. Reference numeral 10 denotes a GaAs substrate.

FIG. 6 is a block diagram showing a signal flow of a conventional MMIC. In the figure, the same reference numerals as those in FIG. 5 denote the same or corresponding parts, 7 is an antenna, and 8 is a signal processing IC. , P1 to P9 are an input port and an output port.

The MMIC 50 is an MMIC used for a transmission / reception unit of a signal for mobile communication.
At 0, the HPAs 5, LNA 1, SW 3, control circuit 2, and negative power supply generation circuit 4 are arranged on the GaAs substrate 10 at a predetermined interval. The MMIC 50 is attached to a mounting board (not shown), a package (not shown), or the like, and as shown in FIG.
It is connected to the antenna 7 provided outside the IC 50, the signal processing IC 8, and the like.

Next, the operation of the conventional MMIC will be described with reference to FIG.
This will be described with reference to FIG. First, during the reception operation, the antenna 7
Input wave is switched to the receiving system by SW3 and LN
A1 which is amplified by A1 and is external to the MMIC 50
Output to C8. That is, the input signal of about −40 dBm input from the antenna 7 outside the MMIC 50 is input from the port P1 to the MMIC 50, the port P1 and the port P9 are connected by the SW3, and is output from the port P9. -3
0dBm, output from port P7, and
It is input as an RF input signal to a signal processing IC 8 provided outside the C50.

At the time of transmission operation, SW3 is switched to the transmission system, and the output signal input to the MMIC is changed to HPA.
5 and transmitted from the antenna 7. That is, the RF output signal of about 0 dBm output from the signal processing IC 8 is input from the port P4 to the MMIC 50,
After being amplified to about 20 dBm in PA5 and output from port P3, it is input from port P2 to SW3, and an output signal of about 20 dBm is output from the antenna via port P1.

At this time, the control circuit 2 sets the bias to the HPAs 5, LNA1, and SW3 while taking the transmission and reception timing into account, and switches the connection state of the SW3 to switch between transmission and reception. The control circuit 2 has a power supply voltage of a device including the MMIC 50, for example, 3V.
And 0 V, which is ground, is applied from the port P5.
Also, in the negative voltage generation circuit 4, the negative of the bias to the HPAs 5 and SW 3 output from the control circuit 2 is obtained from the RF signal of about −10 dBm generated by the external oscillator of the MMIC 50 input from the port P 6. A reference voltage of -1 V is generated. In the MMIC 50, the LNA 1 and the HPA 5 do not operate at the same time, but the control circuit 2 and the negative voltage generation circuit 4 always operate.

[0008]

As described above, the conventional MMIC has a structure in which a plurality of circuits are arranged at predetermined intervals on a substrate. However, increasing the size of the substrate of the MMIC is limited in terms of cost and the like, and it is not possible to sufficiently increase the interval between the circuits. If the power input to or output from the circuit is significantly different from −40 dBm to 20 dBm, the isolation between the circuits becomes insufficient, and the characteristics of the MMIC become unstable due to leakage between the RF signals. there were.

On the other hand, in order to eliminate such signal leakage between circuits, a low-resistance n-type region is provided in a region between a plurality of circuits on the substrate, and a part of the n-type region is provided on the back surface of the substrate. Japanese Patent Laid-Open Publication No. 5-1144931, discloses a semiconductor device integrated with a front-end circuit block and an IF amplifier circuit block on a substrate, and surrounds the front-end circuit block with a high-concentration isolation region. Japanese Patent Application Laid-Open No. Hei 23-23635 discloses a method for
A structure in which the first circuit block and the second circuit block are separated by a high-concentration diffusion region is disclosed in Japanese Patent Laid-Open No. 3-68.
No. 53, respectively. In a semiconductor device having such a structure, isolation between circuits is prevented by a grounded low-resistance n-type region, a high-concentration separation layer, or a high-concentration diffusion region, and interference between circuits such as signal leakage is prevented. Therefore, by providing the low resistance region and the like between the circuits of the conventional MMIC, it is possible to reduce the leakage of the RF signal between the circuits.

However, a region formed by introducing an n-type impurity into a semiconductor substrate, such as a low-resistance n-type region, a high-concentration separation layer, or a high-concentration diffusion region, has a sufficiently small resistance value. Therefore, the isolation amount cannot be sufficiently increased.
Therefore, in particular, as in the above-described conventional MMIC 50, the negative voltage generating circuit 4 which operates with a signal having a small output of about -10 dBm, the control circuit 2 which operates with a logical amplitude of 0 / 0.6V, and an output level higher than these. Other circuits that operate with signals with large differences, such as HPA that operates at a voltage of 0/6 V with an output signal level of about 20 dBm, about -3
LNA operating at 0 dBm output signal level, about 20d
In the case of the one having the SW operating at the output signal level of Bm and the output signal level of about -40 dBm, the signal levels between the control circuit 2 and the negative voltage generation circuit 4 and the other circuits are greatly different. The mere provision of a grounded low-resistance n-type region or a high-concentration separation layer between the circuits results in insufficient isolation between the control circuit 2 and the negative voltage generation circuit 4 and other circuits, and a small output. There is a problem that a circuit operated by a signal is easily affected by RF signal leakage, and characteristics are often unstable.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and a semiconductor device capable of preventing deterioration in characteristics due to RF signal leakage occurring between a plurality of circuits arranged on a substrate. The purpose is to provide.

[0012]

A semiconductor device according to the present invention comprises a semiconductor substrate, a plurality of circuits provided on the semiconductor substrate at predetermined intervals, and a plurality of circuits on the semiconductor substrate. And a ground metal film provided on the separated region.

The plurality of circuits include a plurality of circuits having different signal levels, and the ground metal film includes at least one circuit having a large signal level difference with respect to another circuit among the plurality of circuits and another circuit. And between them.

The plurality of circuits include a negative voltage generating circuit, a control circuit, a switch, a low noise amplifier, and a high output amplifier. The negative voltage generating circuit and the control circuit are arranged adjacent to each other, The film is provided on a region between the negative voltage generation circuit and the control circuit on the semiconductor substrate and another circuit.

Further, the negative voltage generating circuit operates at an input signal level of -10 dBm or more and -8 dBm or less,
Assume that the control circuit operates with reference voltages of 0V and 3V,
The low-noise amplifier operates at an output signal level of -60 dBm or more and -30 dBm or less, and
It operates at an output signal level of not less than dBm and not more than 22 dBm.

Further, the ground metal film is made of the same material as the metal wiring provided in any of the plurality of circuits.

Further, according to the present invention, there is provided a semiconductor device, comprising: a semiconductor substrate; a negative voltage generating circuit, a control circuit, a switch, a low-noise amplifier, and a high-output amplifier disposed on the semiconductor substrate at predetermined intervals from each other. Wherein the negative voltage generating circuit and the control circuit are arranged adjacent to each other on one end side of the substrate, and the high-power amplifier and the switch are arranged adjacent to each other and on the opposite end side to one end of the substrate. The input terminal and the output terminal of the negative voltage generation circuit and the control circuit are disposed on one end side of the substrate, and the input terminal and the output terminal of the high power amplifier and the switch are disposed on the opposite side to one end of the substrate. It is arranged on the end side.

Further, in the semiconductor device, a ground metal film is provided on an area between the negative voltage generating circuit and the control circuit, the high-output amplifier and the switch on the semiconductor substrate.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 shows an MM according to Embodiment 1 of the present invention.
1 is a plan view showing the structure of an IC (Microwave monolithic integrated circuit), in which 100 is an MMI.
C, 1 is a low noise amplifier (hereinafter referred to as LNA) operating at an output level of −60 dBm to −30 dBm, 2 is 0 /
With an input level of 3V, the internal logic amplitude is 0 / 0.6V
, The control circuit 3 operates at 0
A switch (hereinafter, referred to as SW) that operates at V and a reference voltage of −2 to less than −1 V, 4 is a negative voltage generation circuit that operates at an input signal level of −10 to −8 dBm, and 5 is an output of 20 to 22 dBm A high-power amplifier (hereinafter referred to as HPA) operating at a signal level, 6 is a ground metal film made of a metal such as gold having a thickness of about 2 μm and a width of about 80 μm, and this ground metal film 6 is used when the MMIC 100 operates. Grounded. The ground metal film 6 is formed at the same time when a metal wiring such as gold is formed in each circuit. Reference numeral 10 denotes a GaAs substrate.

FIG. 2 is a block diagram showing a signal flow of the MMIC according to the first embodiment of the present invention. In FIG. 2, the same reference numerals as those in FIG. 1 denote the same or corresponding parts, and FIG. An antenna provided outside the MMIC 100, 8 is a signal processing IC provided outside the MMIC 100, and P1 to P9 are input ports and output ports.

Next, the structure will be described. This MMIC
As shown in FIG. 1, L
NA1, SW3, HPA5, control circuit 2, and negative voltage generation circuit 4 are arranged at predetermined intervals, and control circuit 2 and negative voltage generation circuit 4 are arranged adjacent to each other. Voltage generation circuit 4, LNA1 and SW3
And the GaAs substrate 1 in a region sandwiched between the control circuit 2 and the negative voltage generation circuit 4 and the HPA 5
In this example, the ground metal film 6 is disposed on the reference numeral 0. The ground metal film 6 is grounded when each circuit of the MMIC 100 or each circuit of the MMIC 100 is connected to a circuit outside the MMIC 100.

Next, the operation will be described with reference to FIG.
The MMIC 100 is attached to a mounting board (not shown), a package (not shown), or the like, and as shown in FIG.
And a signal processing IC 8 or the like to perform a transmission / reception operation. First, at the time of a reception operation, an input wave from the antenna 7 is switched to a reception system by the SW 3 and the LNA 1
A signal processing IC external to the MMIC 100
8 is output. That is, an input signal of about −40 dBm input from the antenna 7 outside the MMIC 100 is input from the port P1 to the MMIC 100, the port P1 and the port P9 are connected by the SW3, and after being output from the port P9, the port P8 is output. Input to LNA1-
Amplified to 30 dBm, output from port P7, and
The signal is input to a signal processing IC 8 provided outside the IC 100 as an RF input signal.

In the transmission operation, SW3 is switched to the transmission system, and the output signal input to the MMIC is amplified by the HPA 5 and transmitted from the antenna 7.
That is, the R of about 0 dBm output from the signal processing IC 8
The F output signal is input from the port P4 to the MMIC 100, is amplified to about 20 dBm in the HPA 5, is output from the port P3, is input from the port P2 to the SW3, and outputs an output signal of about 20 dBm from the antenna 7 through the port P1. Is output.

At this time, the control circuit 2 sets the bias to the HPAs 5, LNA1, and SW3 while taking the timing of transmission and reception, and switches the connection state of SW3 to switch between transmission and reception. The control circuit 2 has a power supply voltage of a device including the MMIC 100, for example, 3V.
And 0V which is ground is applied from the port P5,
The logical amplitude inside the control circuit 2 is about 0 / 0.6V. Also, in the negative voltage generation circuit 4, the negative of the bias to the HPAs 5 and SW 3 output from the control circuit 2 is obtained from the RF signal of about −10 dBm generated by the oscillator external to the MMIC 100 input from the port P 6. The reference voltages -1 to -2 V are generated. In the MMIC 100, the LNA 1 and the HPA 5 do not operate at the same time, but the control circuit 2 and the negative voltage generation circuit 4 always operate.

In the MMIC according to the first embodiment, the control circuit 2, the negative power supply generation circuit 4, and the other LN
GaAs in the region sandwiched between A1, SW3 and HPA5
Since the ground metal film 6 made of a grounded metal is provided on the s-substrate 10, the amount of isolation between circuits sandwiching the ground metal film 6 is 10 dBm when the ground metal film 6 is not provided. To 40 dBm, and the isolation when the ground metal film 6 is used is superior to the isolation when a low-resistance impurity diffusion region is provided instead of the ground metal film 6.
For this reason, R between the negative voltage generation circuit 4 and other circuits
The leakage of the F signal is -20 dBm or less even in a large case, and the signal level of the negative power supply generation circuit 4 is -10 dBm.
This is about 1/10 or less of the problem-free level. Similarly, since the ground metal film 6 is provided between the control circuit 2 and the HPA 5, the control circuit 2 having a low signal level is also less likely to be affected by the HPA 5 having a high signal level. As a result, the control circuit 2 having a small signal level
And the negative power supply generating circuit 4 is not affected by signal leakage of other circuits having a large signal level, so that the effect of RF signal leakage on the characteristics of the MMIC 100 can be reduced. Therefore, in the above-described conventional MMIC, since the output level difference between the negative power supply generation circuit 4 and the control circuit 2 and other circuits is large, a region formed by diffusing impurities such as a low-resistance n-type region may be used. Even if provided between the circuits, leakage of the RF signal occurred between the negative power supply generation circuit and the control circuit, and other circuits, and as a result, the characteristics of the MMIC were deteriorated. Since the ground metal film 6 is provided in the portion of the negative power supply generation circuit 4 and the control circuit 2 and other circuits where the output level difference is large, the isolation amount is increased to prevent leakage of the RF signal.
Deterioration of the characteristics of the MMIC 100 can be suppressed.

If the same metal as the metal wiring in each circuit is used as the material of the ground metal film 6, the ground metal film 6 can be formed simultaneously with the metal wiring in each circuit. The RF between the circuits can be easily increased without increasing the number of manufacturing steps as compared with a normal MMIC manufacturing step.
Signal leakage can be prevented.

As described above, according to the first embodiment, the control circuit 2 and the negative voltage generation circuit 4, the LNA 1 and the SW3
And the GaAs substrate 1 in a region sandwiched between the control circuit 2 and the negative voltage generation circuit 4 and the HPA 5
0, the ground metal film 6 is disposed on the ground metal film 6.
Can be set to the ground potential, and the amount of isolation between the negative power generation circuit 4 and the control circuit 2 and other circuits having a large output level difference is different from that of the negative power generation circuit 4 and the control circuit 2 and other circuits. This can be made sufficiently large even when a low-resistance impurity diffusion region is provided between them, thereby preventing leakage of an RF signal and suppressing deterioration of MMIC characteristics.

In the first embodiment, the case where the ground metal film is provided between the negative power supply generating circuit 4 and the control circuit 2 and the other circuits has been described. The present invention can be applied to the case where the ground metal film is provided on the region. In such a case, the isolation between circuits can be improved, and the same effect as that of the first embodiment can be obtained.

Embodiment 2 FIG. 3 is a plan view schematically showing the structure of the MMIC according to the second embodiment of the present invention.
In the figure, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding parts, and 101 is an MMIC.

The MMIC according to the second embodiment includes a negative voltage generation circuit 4, a control circuit 2, SW3, LNA1, and H
In the MMIC composed of the PA5, the control circuit 2 and the negative voltage generation circuit 4 are arranged at one end of the substrate 10, and the HPA
5 and SW3 are arranged at an end opposite to the one end on which the control circuit 2 and the negative voltage generation circuit 4 are arranged on the substrate 10, and the ports P5 and N5 of the negative voltage generation circuit 4 and the control circuit 2 are arranged. P6 and port P1 of HPA5 and SW3
To P4, P9 are connected to ports P5, P
6 and the ports P1 to P4, P9 are arranged at the position where the distance is the longest.

In this MMIC, the input / output ports of the negative voltage generation circuit 4 and the control circuit 2 and the input / output ports of the SW3 and HPA5 are arranged apart from each other.
Leakage of RF signals from W3 and HPA5 is prevented by LNA1 which does not operate during transmission and the input circuit inside HPA5. Therefore, compared to the above-described conventional MMIC, the amount of isolation during transmission is reduced. This can provide an effect that deterioration of the characteristics of the MMIC can be easily suppressed without newly providing a member or the like for isolation.

Embodiment 3 FIG. FIG. 4 is a plan view schematically showing the structure of the MMIC according to the third embodiment of the present invention.
In the figure, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding parts, and reference numeral 102 denotes an MMIC.

The MMIC according to the third embodiment is different from the MMIC according to the second embodiment in that the control circuit 2 and the negative voltage generation circuit 4 on the substrate 10 are connected to the LNA1, SW3,
Embodiment 1 on the region sandwiched between the first embodiment and HPA5
In this configuration, the ground metal film 6 described in the above is arranged, thereby providing the same effect as in the second embodiment, and securing the isolation amount by the ground metal film 6 to make the LNA1, SW3, and This has the effect of reducing the leakage of the RF signal from the HPA 5 and suppressing the deterioration of the characteristics of the MMIC.

In the first to third embodiments, M
Although the MIC has been described, the present invention can also be applied to a semiconductor device having a plurality of circuits on a semiconductor substrate that handles other high frequencies. In such a case, the same as in the first to third embodiments described above. It works.

[0035]

As described above, according to the present invention, a semiconductor substrate, a plurality of circuits provided on the semiconductor substrate at predetermined intervals, and a plurality of circuits on the semiconductor substrate are provided. With the ground metal film provided on the sandwiched area, the amount of isolation between opposing circuits via the ground metal film can be increased, preventing RF signal leakage and deteriorating characteristics. An effect that can be suppressed can be obtained.

According to the present invention, the plurality of circuits include:
The ground metal film includes a plurality of circuits having different signal levels, and the ground metal film is provided between one or more circuits having a large signal level difference with respect to another circuit of the plurality of circuits and the other circuit. With this configuration, the amount of isolation between the circuits having a large signal level difference via the ground metal film can be increased, and the effect of preventing the leakage of the RF signal and suppressing the deterioration of the characteristics can be obtained.

According to the present invention, the plurality of circuits include:
Negative voltage generation circuit, control circuit, switch, low noise amplifier,
The negative voltage generating circuit and the control circuit are disposed adjacent to each other, and the ground metal film is connected to the negative voltage generating circuit and the control circuit on the semiconductor substrate, and to other circuits. Since it is provided on the sandwiched region, the amount of isolation between the negative voltage generation circuit and the control circuit having a large signal level difference and other circuits can be increased, and leakage of the RF signal can be prevented. The effect of suppressing the deterioration of the characteristics can be obtained.

According to the invention, the negative voltage generating circuit operates at an input signal level of -10 dBm or more and -8 dBm or less, the control circuit operates at a reference voltage of 0 V or 3 V, and a low noise amplifier is provided. Is −60 dBm or more−
It operates at an output signal level of 30 dBm or less,
Since the high-output amplifier operates at an output signal level of 20 dBm or more and 22 dBm or less, the amount of isolation between the negative voltage generating circuit and the control circuit having a large signal level difference and other circuits can be increased, and the RF signal can be increased. Is obtained, and the effect of suppressing the deterioration of characteristics can be obtained.

Further, according to the present invention, the ground metal film is
Since it is made of the same material as the metal wiring provided in any of the plurality of circuits, the ground metal film can be formed simultaneously with the metal wiring of the circuit, and the ground can be easily grounded without adding a new manufacturing process. The effect of increasing the isolation amount between the circuits facing each other via the metal film can be obtained.

Further, according to the present invention, a semiconductor substrate;
A negative voltage generating circuit, a control circuit, a switch, a low noise amplifier, which are arranged on the semiconductor substrate at a predetermined interval from each other;
And the high-power amplifier, wherein the negative voltage generating circuit and the control circuit are disposed adjacent to each other on one end of the substrate, and the high-output amplifier and the switch are adjacent to each other and provided at one end of the substrate. The input terminal and the output terminal of the negative voltage generation circuit and the control circuit are disposed on one end side of the substrate, and the input terminal and the output terminal of the high power amplifier and the switch are arranged on the opposite end. Since the terminals are arranged on the end opposite to one end of the substrate, the amount of isolation between the high-power amplifier and the switch, the negative voltage generating circuit and the control circuit can be increased. Thus, the effect of preventing the leakage of the RF signal and suppressing the deterioration of the characteristics can be obtained.

According to the present invention, the ground metal film is provided on the region between the negative voltage generating circuit and the control circuit, the high output amplifier and the switch on the semiconductor substrate. The amount of isolation between the amplifier and the switch and the negative voltage generation circuit and the control circuit can be further increased, thereby preventing leakage of an RF signal and reliably suppressing deterioration of characteristics.

[Brief description of the drawings]

FIG. 1 is a plan view showing a structure of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a block diagram illustrating a signal flow of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a plan view showing a structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a plan view showing a structure of a semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a plan view showing the structure of a conventional semiconductor device.

FIG. 6 is a block diagram showing a signal flow of a conventional semiconductor device.

[Explanation of symbols]

Reference Signs List 1 LNA, 2 control circuit, 3 SW, 4 negative voltage generating circuit, 5 HPA, ground metal film, 7 antenna, 8 signal processing IC 10 GaAs substrate, 50, 100 to 10
2 MMIC.

Claims (7)

[Claims] A semiconductor substrate; a plurality of circuits provided on the semiconductor substrate at predetermined intervals; and a ground provided on a region of the semiconductor substrate sandwiched between the plurality of circuits. A semiconductor device comprising a metal film. 2. The semiconductor device according to claim 1, wherein the plurality of circuits include a plurality of circuits having different signal levels, and the ground metal film has a signal level difference with respect to another of the plurality of circuits. A semiconductor device provided between one or more large circuits and the other circuit. 3. The semiconductor device according to claim 1, wherein the plurality of circuits include a negative voltage generation circuit, a control circuit, a switch,
A low-noise amplifier and a high-output amplifier, wherein the negative voltage generating circuit and the control circuit are arranged adjacent to each other, and a ground metal film is formed on the semiconductor substrate by the negative voltage generating circuit and the control circuit. A semiconductor device provided over a region sandwiched between circuits. 4. The semiconductor device according to claim 3, wherein the negative voltage generating circuit operates at an input signal level of -10 dBm or more and -8 dBm or less, and the control circuit operates at a reference voltage of 0 V and 3 V. Wherein the low-noise amplifier operates at an output signal level of -60 dBm or more and -30 dBm or less, and the high-output amplifier operates at an output signal level of 20 dBm or more and 22 dBm or less. 5. The semiconductor device according to claim 1, wherein the ground metal film is made of the same material as a metal wiring provided in any of the plurality of circuits. 6. A semiconductor substrate, and a negative voltage generating circuit, a control circuit, a switch, a low noise amplifier, which are arranged on the semiconductor substrate at a predetermined interval from each other.
And the high-power amplifier, wherein the negative voltage generation circuit and the control circuit are disposed adjacent to each other on one end side of the substrate, and the high-output amplifier and the switch are adjacent to each other and provided at one end of the substrate. The input terminal and the output terminal of the negative voltage generation circuit and the control circuit are disposed on one end side of the substrate, and the input terminal and the output of the high power amplifier and the switch are disposed on the opposite end side. The semiconductor device, wherein the terminal is arranged on an end opposite to one end of the substrate. 7. The semiconductor device according to claim 6, wherein a ground metal film is provided on an area between the negative voltage generation circuit and the control circuit, the high-power amplifier, and the switch on the semiconductor substrate. Characteristic semiconductor device.