US20150085454A1 - Power module - Google Patents

Power module Download PDF

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Publication number
US20150085454A1
US20150085454A1 US14/330,045 US201414330045A US2015085454A1 US 20150085454 A1 US20150085454 A1 US 20150085454A1 US 201414330045 A US201414330045 A US 201414330045A US 2015085454 A1 US2015085454 A1 US 2015085454A1
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US
United States
Prior art keywords
metal layer
substrate
disposed
power module
conductive structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/330,045
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English (en)
Inventor
Shou-Yu Hong
Gan-Yu ZHOU
Jian-Hong Zeng
Zhen-Qing ZHAO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delta Electronics Shanghai Co Ltd
Original Assignee
Delta Electronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delta Electronics Shanghai Co Ltd filed Critical Delta Electronics Shanghai Co Ltd
Assigned to DELTA ELECTRONICS (SHANGHAI) CO., LTD. reassignment DELTA ELECTRONICS (SHANGHAI) CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HONG, SHOU-YU, ZENG, JIAN-HONG, ZHAO, Zhen-qing, ZHOU, GAN-YU
Publication of US20150085454A1 publication Critical patent/US20150085454A1/en
Priority to US15/671,132 priority Critical patent/US10381286B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298—Multilayer circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H05K1/0265—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
US14/330,045 2013-09-23 2014-07-14 Power module Abandoned US20150085454A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/671,132 US10381286B2 (en) 2013-09-23 2017-08-07 Power module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310435466.X 2013-09-23
CN201310435466.XA CN104465603A (zh) 2013-09-23 2013-09-23 功率模块

Related Child Applications (1)

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US15/671,132 Continuation US10381286B2 (en) 2013-09-23 2017-08-07 Power module

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US20150085454A1 true US20150085454A1 (en) 2015-03-26

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US14/330,045 Abandoned US20150085454A1 (en) 2013-09-23 2014-07-14 Power module
US15/671,132 Active US10381286B2 (en) 2013-09-23 2017-08-07 Power module

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US15/671,132 Active US10381286B2 (en) 2013-09-23 2017-08-07 Power module

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US (2) US20150085454A1 (zh)
CN (1) CN104465603A (zh)
TW (1) TWI555174B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190103402A1 (en) * 2017-10-02 2019-04-04 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US20190393111A1 (en) * 2018-06-25 2019-12-26 Actron Technology Corporation Power device package structure
WO2019244372A1 (ja) * 2018-06-20 2019-12-26 ローム株式会社 半導体装置
US20220310473A1 (en) * 2017-10-06 2022-09-29 Industrial Technology Research Institute Chip package
EP4273928A1 (en) * 2022-05-02 2023-11-08 Infineon Technologies AG A semiconductor package comprising power and logic on a single ceramic plate

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Publication number Priority date Publication date Assignee Title
JP6790372B2 (ja) * 2016-02-05 2020-11-25 富士電機株式会社 半導体装置
TWI599285B (zh) * 2016-07-01 2017-09-11 先豐通訊股份有限公司 晶片埋入式電路板結構及功率模組
CN111769081B (zh) * 2020-05-28 2022-04-29 佛山市国星光电股份有限公司 一种集成模块及功率器件
CN113571507A (zh) * 2021-03-16 2021-10-29 广东汇芯半导体有限公司 智能功率模块和智能功率模块的制造方法

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US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5466969A (en) * 1991-11-07 1995-11-14 Kabushiki Kaisha Toshiba Intelligent power device module
US5521437A (en) * 1993-07-05 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module having an improved composite board and method of fabricating the same
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
US6033787A (en) * 1996-08-22 2000-03-07 Mitsubishi Materials Corporation Ceramic circuit board with heat sink
US6291880B1 (en) * 1998-02-12 2001-09-18 Hitachi, Ltd. Semiconductor device including an integrally molded lead frame

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US7061080B2 (en) * 2001-06-11 2006-06-13 Fairchild Korea Semiconductor Ltd. Power module package having improved heat dissipating capability
DE10223035A1 (de) * 2002-05-22 2003-12-04 Infineon Technologies Ag Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
TW200642550A (en) * 2005-05-25 2006-12-01 Cyntec Co Ltd Power module package structure
US7816784B2 (en) * 2008-12-17 2010-10-19 Fairchild Semiconductor Corporation Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
DE102010044709B4 (de) * 2010-09-08 2015-07-02 Vincotech Holdings S.à.r.l. Leistungshalbleitermodul mit Metallsinterverbindungen sowie Herstellungsverfahren
TWI446462B (zh) * 2010-10-11 2014-07-21 Delta Electronics Inc 功率模組
JPWO2012157583A1 (ja) * 2011-05-13 2014-07-31 富士電機株式会社 半導体装置とその製造方法
KR101321282B1 (ko) * 2011-06-17 2013-10-28 삼성전기주식회사 전력 모듈 패키지 및 이를 구비한 시스템 모듈
KR101321277B1 (ko) * 2011-07-04 2013-10-28 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
KR101255946B1 (ko) * 2011-09-16 2013-04-23 삼성전기주식회사 전력 모듈 패키지
JP5409740B2 (ja) * 2011-09-28 2014-02-05 日本発條株式会社 放熱構造体、パワーモジュール、放熱構造体の製造方法およびパワーモジュールの製造方法
US20130105956A1 (en) * 2011-10-31 2013-05-02 Samsung Electro-Mechanics Co., Ltd. Power module package and method for manufacturing the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5466969A (en) * 1991-11-07 1995-11-14 Kabushiki Kaisha Toshiba Intelligent power device module
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
US5521437A (en) * 1993-07-05 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module having an improved composite board and method of fabricating the same
US6033787A (en) * 1996-08-22 2000-03-07 Mitsubishi Materials Corporation Ceramic circuit board with heat sink
US6291880B1 (en) * 1998-02-12 2001-09-18 Hitachi, Ltd. Semiconductor device including an integrally molded lead frame

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190103402A1 (en) * 2017-10-02 2019-04-04 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US20220310473A1 (en) * 2017-10-06 2022-09-29 Industrial Technology Research Institute Chip package
US11776867B2 (en) * 2017-10-06 2023-10-03 Industrial Technology Research Institute Chip package
WO2019244372A1 (ja) * 2018-06-20 2019-12-26 ローム株式会社 半導体装置
JPWO2019244372A1 (ja) * 2018-06-20 2021-03-25 ローム株式会社 半導体装置
JP7071499B2 (ja) 2018-06-20 2022-05-19 ローム株式会社 半導体装置
US11437354B2 (en) 2018-06-20 2022-09-06 Rohm Co, Ltd. Semiconductor device
JP7357719B2 (ja) 2018-06-20 2023-10-06 ローム株式会社 半導体装置
US11804478B2 (en) 2018-06-20 2023-10-31 Rohm Co., Ltd. Semiconductor device
US20190393111A1 (en) * 2018-06-25 2019-12-26 Actron Technology Corporation Power device package structure
US11232992B2 (en) * 2018-06-25 2022-01-25 Actron Technology Corporation Power device package structure
EP4273928A1 (en) * 2022-05-02 2023-11-08 Infineon Technologies AG A semiconductor package comprising power and logic on a single ceramic plate

Also Published As

Publication number Publication date
TW201513301A (zh) 2015-04-01
TWI555174B (zh) 2016-10-21
CN104465603A (zh) 2015-03-25
US10381286B2 (en) 2019-08-13
US20170358516A1 (en) 2017-12-14

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