US20150038066A1 - Low density polishing pad - Google Patents

Low density polishing pad Download PDF

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Publication number
US20150038066A1
US20150038066A1 US13/955,398 US201313955398A US2015038066A1 US 20150038066 A1 US20150038066 A1 US 20150038066A1 US 201313955398 A US201313955398 A US 201313955398A US 2015038066 A1 US2015038066 A1 US 2015038066A1
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United States
Prior art keywords
polishing pad
microelements
polishing
closed cell
diameter mode
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Abandoned
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US13/955,398
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English (en)
Inventor
Ping Huang
William C. Allison
Richard Frentzel
Paul Andre Lefevre
Robert Kerprich
Diane Scott
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CMC Materials LLC
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Nexplanar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US13/955,398 priority Critical patent/US20150038066A1/en
Application filed by Nexplanar Corp filed Critical Nexplanar Corp
Assigned to NEXPLANAR CORPORATION reassignment NEXPLANAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SCOTT, DIANE, FRENTZEL, RICHARD, ALLISON, WILLIAM C., HUANG, PING, KERPRICH, ROBERT, LEFEVRE, PAUL ANDRE
Priority to PCT/US2014/047065 priority patent/WO2015017138A1/en
Priority to KR1020167002464A priority patent/KR101801693B1/ko
Priority to EP14747270.8A priority patent/EP3027363B1/en
Priority to SG11201600242PA priority patent/SG11201600242PA/en
Priority to CN201480042621.4A priority patent/CN105408063B/zh
Priority to JP2016531739A priority patent/JP6517802B2/ja
Priority to TW103126073A priority patent/TWI579106B/zh
Publication of US20150038066A1 publication Critical patent/US20150038066A1/en
Assigned to BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT reassignment BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT INTELLECTUAL PROPERTY SECURITY JOINDER AGREEMENT Assignors: NEXPLANAR CORPORATION
Priority to JP2016234679A priority patent/JP6415521B2/ja
Assigned to CABOT MICROELECTRONICS CORPORATION reassignment CABOT MICROELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEXPLANAR CORPORATION
Assigned to JPMORGAN CHASE BANK, N.A. reassignment JPMORGAN CHASE BANK, N.A. SECURITY AGREEMENT Assignors: CABOT MICROELECTRONICS CORPORATION, FLOWCHEM LLC, KMG ELECTRONIC CHEMICALS, INC., MPOWER SPECIALTY CHEMICALS LLC, QED TECHNOLOGIES INTERNATIONAL, INC.
Assigned to CABOT MICROELECTRONICS CORPORATION, NEXPLANAR CORPORATION reassignment CABOT MICROELECTRONICS CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BANK OF AMERICA, N.A.
Priority to JP2018238139A priority patent/JP2019077036A/ja
Assigned to QED TECHNOLOGIES INTERNATIONAL, INC., MPOWER SPECIALTY CHEMICALS LLC, FLOWCHEM LLC, CABOT MICROELECTRONICS CORPORATION, CMC MATERIALS, INC., INTERNATIONAL TEST SOLUTIONS, LLC, KMG ELECTRONIC CHEMICALS, INC., KMG-BERNUTH, INC., SEALWELD (USA), INC. reassignment QED TECHNOLOGIES INTERNATIONAL, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JPMORGAN CHASE BANK, N.A.
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/04—Zonally-graded surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B24D11/005—Making abrasive webs
    • B24D11/006—Making abrasive webs without embedded abrasive particles

Definitions

  • Embodiments of the present invention are in the field of chemical mechanical polishing (CMP) and, in particular, low density polishing pads and methods of fabricating low density polishing pads.
  • CMP chemical mechanical polishing
  • CMP chemical-mechanical planarization or chemical-mechanical polishing
  • the process involves use of an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer.
  • the polishing pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring.
  • the dynamic polishing head is rotated during polishing.
  • This approach aids in removal of material and tends to even out any irregular topography, making the wafer flat or planar.
  • This may be necessary in order to set up the wafer for the formation of additional circuit elements. For example, this might be necessary in order to bring the entire surface within the depth of field of a photolithography system, or to selectively remove material based on its position.
  • Typical depth-of-field requirements are down to Angstrom levels for the latest sub-50 nanometer technology nodes.
  • the process of material removal is not simply that of abrasive scraping, like sandpaper on wood.
  • the chemicals in the slurry also react with and/or weaken the material to be removed.
  • the abrasive accelerates this weakening process and the polishing pad helps to wipe the reacted materials from the surface.
  • the polishing pad plays a significant role in increasingly complex CMP operations.
  • Embodiments of the present invention include low density polishing pads and methods of fabricating low density polishing pads.
  • a polishing pad for polishing a substrate includes a polishing body having a density of less than 0.5 g/cc and composed of a thermoset polyurethane material. A plurality of closed cell pores is dispersed in the thermoset polyurethane material.
  • a polishing pad for polishing a substrate includes a polishing body having a density of less than approximately 0.6 g/cc and composed of a thermoset polyurethane material.
  • a plurality of closed cell pores is dispersed in the thermoset polyurethane material.
  • the plurality of closed cell pores has a bi-modal distribution of diameters having a first diameter mode with a first peak of size distribution and a second diameter mode with a second, different, peak of size distribution.
  • a method of fabricating a polishing pad involves mixing a pre-polymer and a chain extender or cross-linker with a plurality of microelements to form a mixture.
  • Each of the plurality of microelements has an initial size.
  • the method also involves heating, in a formation mold, the mixture to provide a molded polishing body composed of a thermoset polyurethane material and a plurality of closed cell pores dispersed in the thermoset polyurethane material.
  • the plurality of closed cell pores is formed by expanding each of the plurality of microelements to a final, larger, size during the heating.
  • FIG. 1A is a top down view of a POLITEX polishing pad, in accordance with the prior art.
  • FIG. 1B is a cross-sectional view of a POLITEX polishing pad, in accordance with the prior art.
  • FIGS. 2A-2G illustrate cross-sectional views of operations used in the fabrication of a polishing pad, in accordance with an embodiment of the present invention.
  • FIG. 3 illustrates cross-sectional views at 100 ⁇ and 300 ⁇ magnification of a low density polishing pad including closed cell pores which are all based on a porogen filler, in accordance with an embodiment of the present invention.
  • FIG. 4 illustrates cross-sectional views at 100 ⁇ and 300 ⁇ magnification of a low density polishing pad including closed cell pores, a portion of which based on a porogen filler and a portion of which is based on gas bubbles, in accordance with an embodiment of the present invention.
  • FIG. 5A illustrates a plot of population as a function of pore diameter for a broad mono-modal distribution of pore diameters in a low density polishing pad, in accordance with an embodiment of the present invention.
  • FIG. 5B illustrates a plot of population as a function of pore diameter for a narrow mono-modal distribution of pore diameters in a low density polishing pad, in accordance with an embodiment of the present invention.
  • FIG. 6A illustrates a cross-sectional view of a low density polishing pad having an approximately 1:1 bimodal distribution of closed-cell pores, in accordance with an embodiment of the present invention.
  • FIG. 6B illustrates a plot of population as a function of pore diameter for a narrow distribution of pore diameters in the polishing pad of FIG. 6A , in accordance with an embodiment of the present invention.
  • FIG. 6C illustrates a plot of population as a function of pore diameter for a broad distribution of pore diameters in the polishing pad of FIG. 6A , in accordance with an embodiment of the present invention.
  • FIG. 7 illustrates an isometric side-on view of a polishing apparatus compatible with a low density polishing pad, in accordance with an embodiment of the present invention.
  • Low density polishing pads and methods of fabricating low density polishing pads are described herein.
  • numerous specific details are set forth, such as specific polishing pad designs and compositions, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the present invention may be practiced without these specific details.
  • well-known processing techniques such as details concerning the combination of a slurry with a polishing pad to perform chemical mechanical planarization (CMP) of a semiconductor substrate, are not described in detail in order to not unnecessarily obscure embodiments of the present invention.
  • CMP chemical mechanical planarization
  • One or more embodiments described herein are directed to the fabrication of polishing pads having a low density of less than approximately 0.6 grams/cubic centimeter (g/cc) and, more particularly, a low density of less than approximately 0.5 g/cc.
  • the resulting pads may be based on a polyurethane material having a closed cell porosity which provides for the low density.
  • the low density pads may be used, e.g., as buff polishing pads or as polishing pads designed for special chemical mechanical polishing (CMP) applications such as liner/barrier removal.
  • CMP chemical mechanical polishing
  • Polishing pads described herein may, in some embodiments, be fabricated to have a density as low as in the range of 0.3 g/cc to 0.5 g/cc, such as approximately 0.357 g/cc. In a particular embodiment, a low density pad has a density as low as approximately 0.2 g/cc.
  • a typical CMP pad has a density around 0.7 to 0.8 g/cc, and is generally at least higher than 0.5 g/cc.
  • a typical CMP buff pad is has a “poromeric” design using large cells open to the surface.
  • a composite polyurethane skin is included on a support, such as in the case of a POLITEX polishing pad.
  • buff pad are very soft and low density made with open cell porosity (e.g., a fiber pad and “poromeric” pad).
  • Such pads typically are associated with two fundamental issues for CMP: short life time and less consistent performance as compared with conventional closed cell polyurethane (but higher density) CMP pads.
  • FIGS. 1A and 1B are a top down view and cross-sectional view, respectively, of a POLITEX polishing pad, in accordance with the prior art.
  • a portion 100 A of a POLITEX polishing pad is shown as magnified 300 times in a scanning electron microscope (SEM) image.
  • a portion 100 B of a POLITEX polishing pad is shown as magnified 100 times in a scanning electron microscope (SEM) image.
  • SEM scanning electron microscope
  • one of the fundamental challenges is to fabricate a closed cell polyurethane pad having high porosity and low density.
  • Our own investigations in the fabrication of low density polyurethane pads by a molding or casting process has shown difficulty in merely adding increased volumes of a porogen into a pad formulation mixture to ultimately provide closed cell pores in the pad material based on the added porogen.
  • adding more porogen than for a typical pad formulation can increase the viscosity of the formulation to levels unmanageable for a casting or molding process.
  • the case can be particularly difficult for the inclusion of pre-expanded porogens or porogens that retain essentially the same volume throughout the molding or casting process.
  • un-expanded porogens or porogens that increase volume throughout the molding or casting process are included in a pad formulation for ultimate for generation. In one such embodiment, however, if all final closed cell pores are generated from unexpanded porogens, the viscosity of the formulation may be too low for manageability in casting or molding.
  • pre-expanded porogens or porogens that retain essentially the same volume throughout the molding or casting process are also included to enable viscosity tuning of the pad formulation.
  • Unexpanded Porogen Filler or Underexpanded Porogen Filler (both referred to as UPF) that expands at above ambient temperature is used to create porosity in a polishing pad during manufacture by casting or molding.
  • UPF Underexpanded Porogen Filler
  • a large quantity of UPF is included in a polyurethane-forming mixture.
  • the UPF expands during the pad casting process and creates a low density pad with closed cell pores.
  • the above approach to creating a polishing pad can have advantages over other techniques that have been used to form low density pads with open cells.
  • fabrication of final pad porosity based solely on gas injection or entrainment may require specialized equipment, and may be accompanied by difficulty in controlling final pad density and difficulty in controlling final pore size and distribution.
  • fabrication of final pad porosity based solely on in situ gas generation e.g., water reaction with an isocyanate moiety (NCO) to create CO 2 bubbles can be accompanied by a difficulty in controlling pore size distribution
  • low density polishing pads may be fabricated in a molding process.
  • FIGS. 2A-2G illustrate cross-sectional views of operations used in the fabrication of a polishing pad, in accordance with an embodiment of the present invention.
  • a formation mold 200 is provided.
  • a pre-polymer 202 and a curative 204 are mixed with a plurality of microelements to form a mixture.
  • the plurality of microelements is a plurality of porogens 206 , such as filled or hollow microspheres.
  • the plurality of microelements is a plurality of gas bubbles or liquid droplets, or both, 208 .
  • the plurality of microelements is a combination of a plurality of porogens 206 and a plurality of gas bubbles or liquid droplets, or both, 208 .
  • the mixture 210 includes a first plurality of microelements 212 , each of the first plurality of microelements having an initial size.
  • a second plurality of microelements 214 may also be included in the mixture 210 , as described in greater detail below.
  • a lid 216 of the formation mold 200 is brought together with the base of the formation mold 200 and the mixture 210 takes the shape of the formation mold 200 .
  • the mold 200 is degassed upon or during bringing together of the lid 216 and base of the formation mold 200 such that no cavities or voids form within the formation mold 210 . It is to be understood that embodiments described herein that describe lowering the lid of a formation mold need only achieve a bringing together of the lid and a base of the formation mold.
  • a base of a formation mold is raised toward a lid of a formation mold, while in other embodiments a lid of a formation mold is lowered toward a base of the formation mold at the same time as the base is raised toward the lid.
  • the mixture 210 is heated in the formation mold 200 .
  • Each of the plurality of microelements 212 is expanded to a final, larger, size 218 during the heating.
  • the heating is used to cure the mixture 210 to provide a partially or fully cured pad material 220 surrounding the microelements 218 and, if present, the microelements 214 .
  • the curing forms a cross-linked matrix based on the materials of the pre-polymer and the curative.
  • the ordering of expanding microelements 212 to the final, larger, size 218 and the curing the mixture 210 need not necessarily occur in the order illustrated.
  • the curing of the mixture 210 occurs prior to expanding the microelements 212 to the final, larger, size 218 .
  • the curing of the mixture 210 occurs at the same time as expanding the microelements 212 to the final, larger, size 218 .
  • two separate heating operations are performed to cure the mixture 210 and to expand the microelements 212 to the final, larger, size 218 , respectively.
  • the above described process is used to provide a low density polishing pad 220 .
  • the low density polishing pad 222 is composed of the cured material 220 and includes the expanded microelements 218 and, in some embodiment, additional microelements 214 .
  • the low density polishing pad 222 is composed of a thermoset polyurethane material and the expanded microelements 218 provide a plurality of closed cell pores dispersed in the thermoset polyurethane material.
  • the bottom portion of the Figure is the plan view of the upper cross-sectional view which is taken along the a-a′ axis.
  • the low density polishing pad 222 has a polishing surface 228 having a groove pattern therein.
  • the groove pattern includes radial grooves 226 and concentric circular grooves 228 .
  • each of the plurality of microelements 212 is expanded to the final size 218 by increasing a volume of each of the plurality of microelements by a factor approximately in the range of 3-1000.
  • each of the plurality of microelements 212 is expanded to the final size 214 to provide a final diameter of each of the plurality of microelements 218 approximately in the range of 10-200 microns.
  • each of the plurality of microelements 212 is expanded to the final size 218 by reducing a density of each of the plurality of microelements 212 by a factor approximately in the range of 3-1000.
  • each of the plurality of microelements 212 is expanded to the final size 218 by forming an essentially spherical shape for each of the plurality of microelements 218 of the final size.
  • the plurality of microelements 212 is an added porogen, gas bubble or liquid bubble that is then expanded within the pad material formulation to form closed cell pores within a finished polishing pad material.
  • the plurality of closed cell pores is a plurality of larger porogens formed by expanding corresponding smaller porogens.
  • the term “porogen” may be used to indicate micro- or nano-scale spherical or somewhat spherical particles with “hollow” centers. The hollow centers are not filled with solid material, but may rather include a gaseous or liquid core.
  • the plurality of closed cell pores begins as un-expanded gas-filled or liquid-filled EXPANCELTM distributed throughout a mixture.
  • each of the plurality of closed cell pores has a diameter approximately in the range of 10-100 microns in its expanded state, e.g., in the final product.
  • each of the plurality of microelements having the initial size includes a physical shell
  • each of the plurality of microelements having the final size includes an expanded physical shell.
  • each of the plurality of microelements 212 having the initial size is a liquid droplet
  • each of the plurality of microelements 218 having the final size is a gas bubble.
  • mixing to form the mixture 210 further involves injecting a gas into the pre-polymer and the chain extender or cross-linker, or into a product formed there from.
  • the pre-polymer is an isocyanate and the mixing further involves adding water to the pre-polymer.
  • the plurality of closed cell pores includes pores that are discrete from one another. This is in contrast to open cell pores which may be connected to one another through tunnels, such as the case for the pores in a common sponge.
  • mixing the pre-polymer 202 and the chain extender or cross-linker 204 with the plurality of microelements 212 further involves mixing with a second plurality of microelements 214 to form the mixture 210 .
  • Each of the second plurality of microelements 214 has a size.
  • the heating described in association with FIG. 2E is performed at a temperature sufficiently low such that the size of each of the second plurality of microelements 214 is essentially the same before and after the heating, as is depicted in FIG. 2E .
  • the heating is performed at a temperature of approximately 100 degrees Celsius or less, and the second plurality of microelements 214 has an expansion threshold of greater than approximately 130 degrees Celsius. In one other embodiment, the second plurality of microelements 214 has an expansion threshold greater than an expansion threshold of the plurality of microelements 212 . In one specific such embodiment, the expansion threshold of the second plurality of microelements 214 is greater than approximately 120 degrees Celsius, and the expansion threshold of the plurality of microelements 212 is less than approximately 110 degrees Celsius. As such, in an embodiment, during the heating, the microelements 212 expand during to heating to provide expanded microelements 218 , while the microelements 214 essentially remain unchanged.
  • each of the second plurality of microelements 214 is composed of pre-expanded and gas-filled EXPANCELTM distributed throughout (e.g., as an additional component in) the polishing pad. That is, any significant expansion that could occur for the microelements 214 is carried our prior to their inclusion in a polishing pad formation, e.g., before being included in mixture 210 .
  • the pre-expanded EXPANCELTM is filled with pentane.
  • the microelements 214 provide a plurality of closed cell pores (shown again as 214 with little to no change during the molding process) has a diameter approximately in the range of 10-100 microns.
  • the resulting plurality of closed cell pores includes pores that are discrete from one another. This is in contrast to open cell pores which may be connected to one another through tunnels, such as the case for the pores in a common sponge.
  • a mixture of the pre-polymer 202 , the chain extender or cross-linker 204 , and the second plurality of microelements 214 has a viscosity.
  • the mixture of the pre-polymer 202 , the chain extender or cross-linker 204 , the plurality of microelements 212 having the initial size, and the second plurality of microelements 214 essentially has the same viscosity. That is, the inclusion of the plurality of microelements 212 having the initial (smaller) size has little to no impact on the viscosity of the mixture.
  • a described viscosity for optimal molding conditions may be selected based on the inclusion of the second plurality of microelements with a size that remains essentially constant throughout the molding process.
  • the viscosity is a predetermined viscosity
  • a relative amount of the second plurality of microelements 214 in the mixture 210 is selected based on the predetermined viscosity.
  • the plurality of microelements 212 has little to no effect on the viscosity of the mixture 210 .
  • each of the plurality of microelements 218 having the expanded final size is of approximately the same shape and size as each of the plurality of microelements 214 which do not expand through the heating process, as is depicted. It is to be understood, however, that each of the plurality of microelements 218 having the expanded final size need not have the same shape and/or size as each of the plurality of microelements 214 . In an embodiment, as described in greater detail below in association with FIGS.
  • the resulting molded polishing body of pad 222 includes, as closed cell pores, the plurality of expanded microelements 218 having a first diameter mode with a first peak of size distribution. Also included, also as closed cell pores, is the second plurality of microelements 214 having a second diameter mode with a second, different, peak of size distribution. In one such embodiment, the plurality of closed cell pores of microelements 218 and the second plurality of closed cell pores of microelements 214 provides a total pore volume in the thermoset polyurethane material approximately in the range of 55-80% of the total volume of the thermoset polyurethane material of low density polishing pad 222 .
  • heating the mixture 210 to provide the molded polishing body 222 involves forming the polishing body 222 having a density of less than 0.5 g/cc. In one such embodiment, however, the mixture 210 has a density of greater than 0.5 g/cc prior to the heating.
  • the pre-polymer 202 is an isocyanate and the chain extender or cross-linker 204 is an aromatic diamine compound, and the polishing pad 222 is composed of a thermoset polyurethane material 220 .
  • forming mixture 210 further involves adding an opacifying filler to the pre-polymer 202 and the chain extender or cross-linker 204 to ultimately provide an opaque molded polishing body 222 .
  • the opacifying filler is a material such as, but not limited to, boron nitride, cerium fluoride, graphite, graphite fluoride, molybdenum sulfide, niobium sulfide, talc, tantalum sulfide, tungsten disulfide, or Teflon.
  • the mixture 210 is only partially cured in the mold 200 and, in one embodiment, is further cured in an oven subsequent to removal from the formation mold 220 .
  • the polishing pad precursor mixture 210 is used to ultimately form a molded homogeneous polishing body 222 composed of a thermoset, closed cell polyurethane material.
  • the polishing pad precursor mixture 210 is used to ultimately form a hard pad and only a single type of curative 204 is used.
  • the polishing pad precursor mixture 210 is used to ultimately form a soft pad and a combination of a primary and a secondary curative (together providing 210 ) is used.
  • the pre-polymer 202 includes a polyurethane precursor
  • the primary curative includes an aromatic diamine compound
  • the secondary curative includes an ether linkage.
  • the polyurethane precursor is an isocyanate
  • the primary curative is an aromatic diamine
  • the secondary curative is a curative such as, but not limited to, polytetramethylene glycol, amino-functionalized glycol, or amino-functionalized polyoxypropylene.
  • a pre-polymer 202 , a primary curative, and a secondary curative (together 204 ) have an approximate molar ratio of 106 parts pre-polymer, 85 parts primary curative, and 15 parts secondary curative, i.e., to provide a stoichiometry of approximately 1:0.96 pre-polymer:curative. It is to be understood that variations of the ratio may be used to provide polishing pads with varying hardness values, or based on the specific nature of the pre-polymer and the first and second curatives.
  • heating in the formation mold 200 involves forming a groove pattern in the polishing surface 224 of the molded polishing body 222 .
  • the groove pattern as shown includes radial grooves and concentric circular circumferential grooves. It is to be understood that radial grooves or circumferential grooves may be omitted.
  • the concentric circumferential grooves may instead be polygons, such as nested triangles, squares, pentagons, hexagons, etc.
  • the polishing surface may instead be based on protrusions instead of grooves.
  • a low density polishing pad may be fabricated without grooves in the polishing surface.
  • a non-patterned lid of a molding apparatus is used instead of a patterned lid.
  • the use of a lid during molding may be omitted.
  • the mixture 210 may be heated under a pressure approximately in the range of 2-12 pounds per square inch.
  • a low density pad may be fabricated having closed cell pores.
  • a polishing pad includes a polishing body having a density of less than 0.6 and composed of a thermoset polyurethane material.
  • a plurality of closed cell pores is dispersed in the thermoset polyurethane material.
  • the density is less than 0.5 g/cc.
  • the plurality of closed cell pores provides a total pore volume in the thermoset polyurethane material approximately in the range of 55-80% of the total volume of the thermoset polyurethane material.
  • each of the plurality of closed cell pores is essentially spherical.
  • the polishing body further includes a first, grooved surface; and a second, flat, surface opposite the first surface, as described in association with FIG. 2G .
  • the polishing body is a homogeneous polishing body, as is described in greater detail below.
  • each of the plurality of closed cell pores includes a physical shell composed of a material different from the thermoset polyurethane material.
  • the closed cell pores may be fabricated by including a porogen in a mixture that is molded for ultimate pad fabrication, as described above.
  • each of the plurality of closed cell pores includes a physical shell composed of a material different from the thermoset polyurethane material.
  • the physical shells of a first portion of the plurality of closed cell pores are composed of a material different than the physical shells of a second portion of the plurality of closed cell pores.
  • the closed cell pores may be fabricated by including two types of porogens (e.g., expanded and unexpanded) in a mixture that is molded for ultimate pad fabrication, as described above.
  • each of only a portion of the plurality of closed cell pores includes a physical shell composed of a material different from the thermoset polyurethane material.
  • the closed cell pores may be fabricated by including both porogens and gas bubbles or liquid drops in a mixture that is molded for ultimate pad fabrication, as described above.
  • each of the plurality of closed cell pores does not include a physical shell of a material different from the thermoset polyurethane material.
  • the closed cell pores may be fabricated by including gas bubbles or liquid drops, or both, in a mixture that is molded for ultimate pad fabrication, as described above.
  • FIG. 3 illustrates cross-sectional views at 100 ⁇ and 300 ⁇ magnification of a low density polishing pad 300 including closed cell pores which are all based on a porogen filler, in accordance with an embodiment of the present invention.
  • all pores shown are formed from a porogen and, as such, all include a physical shell.
  • a portion of the pores is formed from a pre-expanded Expancel porogen.
  • Another portion is formed from an unexpanded Expancel porogen which expanded during a molding process used to fabricate polishing pad 300 .
  • the un-expanded Expancel expands at low temperature by design.
  • the molding or casting process temperature is above the expansion temperature and the Expancel rapidly expands during the molding or casting.
  • the density of pad 300 is approximately 0.45 and all pores in the pad are closed cell pores.
  • FIG. 4 illustrates cross-sectional views at 100 ⁇ and 300 ⁇ magnification of a low density polishing pad 400 including closed cell pores, a portion of which based on a porogen filler and a portion of which is based on gas bubbles, in accordance with an embodiment of the present invention.
  • the small pores shown are formed from a porogen and, as such, include a physical shell. More specifically, the small pores are formed from a pre-expanded Expancel porogen.
  • the large pores are formed using a gas. More specifically, the large pores are formed using a small quantity of water and surfactant injected into a pad formulation mixture just prior to molding or casting.
  • a distribution of pore diameters in a polishing pad can have a bell curve or mono-modal distribution.
  • FIG. 5A illustrates a plot of population as a function of pore diameter for a broad mono-modal distribution of pore diameters in a low density polishing pad, in accordance with an embodiment of the present invention.
  • the mono-modal distribution may be relatively broad.
  • FIG. 5B illustrates a plot of population as a function of pore diameter for a narrow mono-modal distribution of pore diameters in a low density polishing pad, in accordance with an embodiment of the present invention.
  • the mono-modal distribution may be relatively narrow. In either the narrow distribution or the broad distribution, only one maximum diameter population, such as a maximum population at 40 microns (as shown as an example), is provided in the polishing pad.
  • a low density polishing pad may instead be fabricated with a bimodal distribution of pore diameters.
  • FIG. 6A illustrates a cross-sectional view of a low density polishing pad having an approximately 1:1 bimodal distribution of closed-cell pores, in accordance with an embodiment of the present invention.
  • a polishing pad 600 includes a homogeneous polishing body 601 .
  • the homogeneous polishing body 601 is composed of a thermoset polyurethane material with a plurality of closed cell pores 602 disposed in the homogeneous polishing body 601 .
  • the plurality of closed cell pores 602 has a multi-modal distribution of diameters.
  • the multi-modal distribution of diameters is a bimodal distribution of diameters including a small diameter mode 604 and a large diameter mode 606 , as depicted in FIG. 6A .
  • the plurality of closed cell pores 602 includes pores that are discrete from one another, as depicted in FIG. 6A . This is in contrast to open cell pores which may be connected to one another through tunnels, such as the case for the pores in a common sponge.
  • each of the closed cell pores includes a physical shell, such as a shell of a porogen. In another embodiment, however, some or all of the closed cell pores does not include a physical shell.
  • the plurality of closed cell pores 602 and hence the multi-modal distribution of diameters, is distributed essentially evenly and uniformly throughout the thermoset polyurethane material of homogeneous polishing body 601 , as depicted in FIG. 6A .
  • the bimodal distribution of pore diameters of the plurality of closed cell pores 602 may be approximately 1:1, as depicted in FIG. 6A .
  • FIG. 6B illustrates a plot 620 of population as a function of pore diameter for a narrow distribution of pore diameters in the polishing pad of FIG. 6A , in accordance with an embodiment of the present invention.
  • FIG. 6C illustrates a plot 630 of population as a function of pore diameter for a broad distribution of pore diameters in the polishing pad of FIG. 6A , in accordance with an embodiment of the present invention.
  • the diameter value for the maximum population of the large diameter mode 606 is approximately twice the diameter value of the maximum population of the small diameter mode 604 .
  • the diameter value for the maximum population of the large diameter mode 606 is approximately 40 microns and the diameter value of the maximum population of the small diameter mode 604 is approximately 20 microns, as depicted in FIGS. 6B and 6C .
  • the diameter value for the maximum population of the large diameter mode 606 is approximately 80 microns and the diameter value of the maximum population of the small diameter mode 604 is approximately 40 microns.
  • the distributions of pore diameters are narrow.
  • the population of the large diameter mode 606 has essentially no overlap with the population of the small diameter mode 604 .
  • the distributions of pore diameters are broad.
  • the population of the large diameter mode 606 overlaps with the population of the small diameter mode 604 . It is to be understood that, a bimodal distribution of pore diameters need not be 1:1, as is described above in association with FIGS. 6A-6C . Also, a bimodal distribution of pore diameters need not be uniform.
  • the multi-modal distribution of diameters of closed cell pores is graded throughout the thermoset polyurethane material with a gradient from the first, grooved surface to the second, flat surface.
  • the graded multi-modal distribution of diameters is a bimodal distribution of diameters including a small diameter mode proximate to the first, grooved surface, and a large diameter mode proximate to the second, flat surface.
  • low density polishing pad has a plurality of closed cell pores with a bi-modal distribution of diameters having a first diameter mode with a first peak of size distribution and a second diameter mode with a second, different, peak of size distribution.
  • the closed cell pores of the first diameter mode each include a physical shell composed of a material different from the thermoset polyurethane material.
  • the closed cell pores of the second diameter mode each include a physical shell composed a material different from the thermoset polyurethane material.
  • the physical shell of each of the closed cell pores of the second diameter mode is composed of a material different from the material of the physical shells of the closed cell pores of the first diameter mode.
  • the first peak of size distribution of the first diameter mode has a diameter approximately in the range of 10-50 microns
  • the second peak of size distribution of the second diameter mode has a diameter approximately in the range of 10-150 microns.
  • the first diameter mode overlaps with the second diameter mode. In another embodiment, however, the first diameter mode has essentially no overlap with the second diameter mode.
  • a total population in count number of the first diameter mode is not equal to a total population in count number of the second diameter mode. In another embodiment, however, a total population in count number of the first diameter mode is approximately equal to a total population in count number of the second diameter mode.
  • the bi-modal distribution of diameters is distributed essentially evenly throughout the thermoset polyurethane material. In another embodiment, however, the bi-modal distribution of diameters is distributed in a graded fashion throughout the thermoset polyurethane material.
  • low density polishing pads described herein such as polishing pad 222 , 300 or 400 , or the above described variations thereof, are suitable for polishing substrates.
  • the polishing pad is used as a buff pad.
  • the substrate may be one used in the semiconductor manufacturing industry, such as a silicon substrate having device or other layers disposed thereon.
  • the substrate may be one such as, but not limited to, a substrates for MEMS devices, reticles, or solar modules.
  • a polishing pad for polishing a substrate is intended to encompass these and related possibilities.
  • Low density polishing pads described herein such as polishing pad 222 , 300 or 400 , or the above described variations thereof, may be composed of a homogeneous polishing body of a thermoset polyurethane material.
  • the homogeneous polishing body is composed of a thermoset, closed cell polyurethane material.
  • the term “homogeneous” is used to indicate that the composition of a thermoset, closed cell polyurethane material is consistent throughout the entire composition of the polishing body.
  • the term “homogeneous” excludes polishing pads composed of, e.g., impregnated felt or a composition (composite) of multiple layers of differing material.
  • thermoset is used to indicate a polymer material that irreversibly cures, e.g., the precursor to the material changes irreversibly into an infusible, insoluble polymer network by curing.
  • the term “thermoset” excludes polishing pads composed of, e.g., “thermoplast” materials or “thermoplastics”—those materials composed of a polymer that turns to a liquid when heated and returns to a very glassy state when cooled sufficiently.
  • polishing pads made from thermoset materials are typically fabricated from lower molecular weight precursors reacting to form a polymer in a chemical reaction, while pads made from thermoplastic materials are typically fabricated by heating a pre-existing polymer to cause a phase change so that a polishing pad is formed in a physical process.
  • Polyurethane thermoset polymers may be selected for fabricating polishing pads described herein based on their stable thermal and mechanical properties, resistance to the chemical environment, and tendency for wear resistance.
  • the homogeneous polishing body upon conditioning and/or polishing, has a polishing surface roughness approximately in the range of 1-5 microns root mean square. In one embodiment, the homogeneous polishing body, upon conditioning and/or polishing, has a polishing surface roughness of approximately 2.35 microns root mean square. In an embodiment, the homogeneous polishing body has a storage modulus at 25 degrees Celsius approximately in the range of 30-120 megaPascals (MPa). In another embodiment, the homogeneous polishing body has a storage modulus at 25 degrees Celsius approximately less than 30 megaPascals (MPa). In one embodiment, the homogeneous polishing body has a compressibility of approximately 2.5%.
  • low density polishing pads described herein such as polishing pad 222 , 300 or 400 , or the above described variations thereof, include a molded homogeneous polishing body.
  • the term “molded” is used to indicate that a homogeneous polishing body is formed in a formation mold, as described in more detail above in association with FIGS. 2A-2G . It is to be understood that, in other embodiments, a casting process may be used instead to fabricate low density polishing pads such as those described above.
  • the homogeneous polishing body is opaque.
  • the term “opaque” is used to indicate a material that allows approximately 10% or less visible light to pass.
  • the homogeneous polishing body is opaque in most part, or due entirely to, the inclusion of an opacifying filler throughout (e.g., as an additional component in) the homogeneous thermoset, closed cell polyurethane material of the homogeneous polishing body.
  • the opacifying filler is a material such as, but not limited to, boron nitride, cerium fluoride, graphite, graphite fluoride, molybdenum sulfide, niobium sulfide, talc, tantalum sulfide, tungsten disulfide, or Teflon.
  • a low density polishing pad has a thickness approximately in the range of 0.075 inches to 0.130 inches, e.g., approximately in the range of 1.9-3.3 millimeters.
  • a low density polishing pad has a diameter approximately in the range of 20 inches to 30.3 inches, e.g., approximately in the range of 50-77 centimeters, and possibly approximately in the range of 10 inches to 42 inches, e.g., approximately in the range of 25-107 centimeters.
  • a low density polishing pad described herein further includes a local area transparency (LAT) region disposed in the polishing pad.
  • LAT region is disposed in, and covalently bonded with, the polishing pad. Examples of suitable LAT regions are described in U.S. patent application Ser. No. 12/657,135 filed on Jan. 13, 2010, assigned to NexPlanar Corporation, and U.S. patent application Ser. No. 12/895,465 filed on Sep. 30, 2010, assigned to NexPlanar Corporation.
  • a low density polishing pad further includes an aperture disposed in the polishing surface and polishing body. The aperture can accommodate, e.g., a detection device included in a platen of a polishing tool.
  • a low density polishing pad further includes a detection region for use with, e.g., an eddy current detection system. Examples of suitable eddy current detection regions are described in U.S. patent application Ser. No. 12/895,465 filed on Sep. 30, 2010, assigned to NexPlanar Corporation.
  • Low density polishing pads described herein such as polishing pad 222 , 300 or 400 , or the above described variations thereof, may further include a foundation layer disposed on the back surface of the polishing body.
  • the result is a polishing pad with bulk or foundation material different from the material of the polishing surface.
  • a composite polishing pad includes a foundation or bulk layer fabricated from a stable, essentially non-compressible, inert material onto which a polishing surface layer is disposed.
  • a harder foundation layer may provide support and strength for pad integrity while a softer polishing surface layer may reduce scratching, enabling decoupling of the material properties of the polishing layer and the remainder of the polishing pad. Examples of suitable foundation layers are described in U.S.
  • Low density polishing pads described herein such as polishing pad 222 , 300 or 400 , or the above described variations thereof, may further include a sub pad disposed on the back surface of the polishing body, e.g., a conventional sub pad as known in the CMP art.
  • the sub pad is composed of a material such as, but not limited to, foam, rubber, fiber, felt or a highly porous material.
  • individual grooves of a groove pattern formed in a low density polishing pad such as those described herein may be from about 4 to about 100 mils deep at any given point on each groove.
  • the grooves are about 10 to about 50 mils deep at any given point on each groove.
  • the grooves may be of uniform depth, variable depth, or any combinations thereof.
  • the grooves are all of uniform depth.
  • the grooves of a groove pattern may all have the same depth.
  • some of the grooves of a groove pattern may have a certain uniform depth while other grooves of the same pattern may have a different uniform depth.
  • groove depth may increase with increasing distance from the center of the polishing pad. In some embodiments, however, groove depth decreases with increasing distance from the center of the polishing pad.
  • grooves of uniform depth alternate with grooves of variable depth.
  • Individual grooves of a groove pattern formed in a low density polishing pad such as those described herein may be from about 2 to about 100 mils wide at any given point on each groove. In some embodiments, the grooves are about 15 to about 50 mils wide at any given point on each groove.
  • the grooves may be of uniform width, variable width, or any combinations thereof. In some embodiments, the grooves of are all of uniform width. In some embodiments, however, some of the grooves of a concentric have a certain uniform width, while other grooves of the same pattern have a different uniform width. In some embodiments, groove width increases with increasing distance from the center of the polishing pad. In some embodiments, groove width decreases with increasing distance from the center of the polishing pad. In some embodiments, grooves of uniform width alternate with grooves of variable width.
  • individual grooves of the groove patterns described herein may be of uniform volume, variable volume, or any combinations thereof.
  • the grooves are all of uniform volume. In some embodiments, however, groove volume increases with increasing distance from the center of the polishing pad. In some other embodiments, groove volume decreases with increasing distance from the center of the polishing pad. In some embodiments, grooves of uniform volume alternate with grooves of variable volume.
  • Grooves of the groove patterns described herein may have a pitch from about 30 to about 1000 mils. In some embodiments, the grooves have a pitch of about 125 mils. For a circular polishing pad, groove pitch is measured along the radius of the circular polishing pad. In CMP belts, groove pitch is measured from the center of the CMP belt to an edge of the CMP belt. The grooves may be of uniform pitch, variable pitch, or in any combinations thereof. In some embodiments, the grooves are all of uniform pitch. In some embodiments, however, groove pitch increases with increasing distance from the center of the polishing pad. In some other embodiments, groove pitch decreases with increasing distance from the center of the polishing pad.
  • the pitch of the grooves in one sector varies with increasing distance from the center of the polishing pad while the pitch of the grooves in an adjacent sector remains uniform. In some embodiments, the pitch of the grooves in one sector increases with increasing distance from the center of the polishing pad while the pitch of the grooves in an adjacent sector increases at a different rate. In some embodiments, the pitch of the grooves in one sector increases with increasing distance from the center of the polishing pad while the pitch of the grooves in an adjacent sector decreases with increasing distance from the center of the polishing pad. In some embodiments, grooves of uniform pitch alternate with grooves of variable pitch. In some embodiments, sectors of grooves of uniform pitch alternate with sectors of grooves of variable pitch.
  • Polishing pads described herein may be suitable for use with a variety of chemical mechanical polishing apparatuses.
  • FIG. 7 illustrates an isometric side-on view of a polishing apparatus compatible with a low density polishing pad, in accordance with an embodiment of the present invention.
  • a polishing apparatus 700 includes a platen 704 .
  • the top surface 702 of platen 704 may be used to support a low density polishing pad.
  • Platen 704 may be configured to provide spindle rotation 706 and slider oscillation 708 .
  • a sample carrier 710 is used to hold, e.g., a semiconductor wafer 711 in place during polishing of the semiconductor wafer with a polishing pad. Sample carrier 710 is further supported by a suspension mechanism 712 .
  • a slurry feed 714 is included for providing slurry to a surface of a polishing pad prior to and during polishing of the semiconductor wafer.
  • a conditioning unit 790 may also be included and, in one embodiment, includes a diamond tip for conditioning a polishing pad.
  • a polishing pad for polishing a substrate includes a polishing body having a density of less than 0.5 g/cc and composed of a thermoset polyurethane material. A plurality of closed cell pores is dispersed in the thermoset polyurethane material.
  • the polishing body is a homogeneous polishing body.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
US13/955,398 2013-07-31 2013-07-31 Low density polishing pad Abandoned US20150038066A1 (en)

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US13/955,398 US20150038066A1 (en) 2013-07-31 2013-07-31 Low density polishing pad
PCT/US2014/047065 WO2015017138A1 (en) 2013-07-31 2014-07-17 Low density polishing pad
KR1020167002464A KR101801693B1 (ko) 2013-07-31 2014-07-17 저밀도 폴리싱 패드
EP14747270.8A EP3027363B1 (en) 2013-07-31 2014-07-17 Low density polishing pad
SG11201600242PA SG11201600242PA (en) 2013-07-31 2014-07-17 Low density polishing pad
CN201480042621.4A CN105408063B (zh) 2013-07-31 2014-07-17 低密度抛光垫
JP2016531739A JP6517802B2 (ja) 2013-07-31 2014-07-17 低密度研磨パッド
TW103126073A TWI579106B (zh) 2013-07-31 2014-07-30 低密度拋光墊
JP2016234679A JP6415521B2 (ja) 2013-07-31 2016-12-02 低密度研磨パッド
JP2018238139A JP2019077036A (ja) 2013-07-31 2018-12-20 低密度研磨パッド

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JP2016525459A (ja) 2016-08-25
KR101801693B1 (ko) 2017-11-27
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TW201509595A (zh) 2015-03-16

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