US20140158545A1 - Apparatus for electrochemical deposition of a metal - Google Patents

Apparatus for electrochemical deposition of a metal Download PDF

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Publication number
US20140158545A1
US20140158545A1 US14/234,080 US201214234080A US2014158545A1 US 20140158545 A1 US20140158545 A1 US 20140158545A1 US 201214234080 A US201214234080 A US 201214234080A US 2014158545 A1 US2014158545 A1 US 2014158545A1
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Prior art keywords
electrolyte
tank
metal
refreshing
plating
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Abandoned
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US14/234,080
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English (en)
Inventor
Stefan Schäfer
Christine Fehlis
Marlies Kleinfeld
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MacDermid Enthone Inc
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Enthone Inc
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Assigned to ENTHONE INC. reassignment ENTHONE INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: Fehlis, Christine, KLEINFELD, MARLIES, Schäfer, Stefan
Publication of US20140158545A1 publication Critical patent/US20140158545A1/en
Assigned to BARCLAYS BANK PLC, AS COLLATERAL AGENT reassignment BARCLAYS BANK PLC, AS COLLATERAL AGENT PATENT SECURITY AGREEMENT Assignors: ENTHONE INC.
Assigned to MACDERMID ENTHONE INC. (F/K/A ENTHONE INC.) reassignment MACDERMID ENTHONE INC. (F/K/A ENTHONE INC.) RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Assigned to BARCLAYS BANK PLC, AS COLLATERAL AGENT reassignment BARCLAYS BANK PLC, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MACDERMID ENTHONE INC. (F/K/A ENTHONE INC.)
Assigned to MACDERMID ENTHONE INC. reassignment MACDERMID ENTHONE INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: ENTHONE INC
Assigned to CITIBANK, N.A. reassignment CITIBANK, N.A. ASSIGNMENT OF SECURITY INTEREST IN PATENT COLLATERAL Assignors: BARCLAYS BANK PLC
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/18—Regeneration of process solutions of electrolytes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50

Definitions

  • the invention as described in the following relates to an apparatus for the electrochemical deposition of a metal on a substrate, which apparatus is capable of refreshing an electrolyte used for the deposition in a continuous way. Furthermore, the invention as described relates to a method of refreshing an electrolyte for the electrochemical deposition of a metal on a substrate.
  • Electrochemical deposition of a metal is a well-know process used, for example, to deposit a metal coating on a substrate surface or work-piece. Electroplating is versatile used in many industrial fields, like e.g. automotive industry, aerospace industry, fitting industry, machine building, and electric/electronic industry.
  • the surface on which the metal is intended to be deposited is brought into contact with a conductive electrolyte comprising ions of the metal to be deposited. While the substrate surface is brought into contact with the electrolyte an electric current between the substrate surface and a counter-electrode is applied. By the applied electric current the metals ions are reduced to the metal and deposited on the substrate surface according to the general formula:
  • a special field of electric/electronic industry in this concern is solar industry producing solar cells for transforming sunlight into electric energy. Due to boost on renewable energy, especially the demand on solar cells has increased.
  • a modern type of solar cell is the so called CIGS thin film solar cell (copper, indium, gallium, sulfur and selene thin film solar cell), which is only about 3 ⁇ m thick and can also be flexible.
  • a (Cu(InGa)Se 2 -layer is deposited on a substrate surface, like e.g. a glass substrate, a polymer substrate, or a metal foil.
  • a substrate surface like e.g. a glass substrate, a polymer substrate, or a metal foil.
  • Other combinations of layers are possible, too.
  • CIS, CuGaSe 2 , or CuInGaSeS layer combinations are also known in the state of the art, as well as bypass cells.
  • the quality of the metal deposition is quite sensitive to the concentration of the metal to be deposited in the electrolyte used for the electrochemical deposition process, especially with respect to the thickness distribution of the deposited metal layer.
  • US 20090315148 A1 discloses an electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells.
  • the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S.
  • the thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.
  • US 20090173634 A1 discloses gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells.
  • the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor.
  • the solution may further include one or both of a Cu salt and an In salt.
  • US 20100140098 A1 discloses a selenium containing electrodeposition solutions used to manufacture solar cell absorber layers.
  • an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material.
  • methods of electroplating using electrodeposition solutions are also described.
  • US 20100059385 A1 discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system.
  • the invention discloses method to fabricate semiconductor thin film Cu(InGa (SeS).sub.2 by sequentially electroplating a stack comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450 C and 700 C.
  • US 20040206390 A1 discloses a photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film.
  • the thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath.
  • the electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
  • US 20100317129 A1 discloses a methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications.
  • a method in which the thickness of a sub-layer and layers there over of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.
  • an apparatus for the electrochemical deposition of a metal on a substrate comprising a plating tank holding a plating electrolyte and a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte, wherein the plating tank comprises an inert electrode electrically connected to the substrate by a rectifier, and wherein the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separator, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode are electrically connected to a rectifier.
  • the apparatus comprises a plating tank holding a plating electrolyte for the electrochemical deposition of a metal on a substrate surface.
  • the electrolyte comprises ions of at least one metal to be deposited.
  • the ions of the metal to be deposited are dissolved in a solvent, like e.g. water.
  • the ions of the metal do be deposited are comprised in the electrolyte in an amount suitable to allow a metal deposition on the substrate surface by applying an electrical current between the substrate surface and a counter electrode, e.g. an inert anode electrically connected to the substrate by e.g. a rectifier.
  • an inert anode in the plating tank is advantageous, because the inert anode is dimensionally stable and allows a constant anodic current density. Furthermore, an inert anode allows a higher degree of freedom in the design of the cell.
  • the electrolyte may comprise additive influencing/supporting the deposition of the metal and/or stabilizing the electrolyte. Further additives may be comprised in the electrolyte. Due to the appliance of the electrical current on the substrate surface the ions of the metal the metal to be deposited are reduced to the metal, thereby depositing a metal layer on the substrate surface. Due to the reduction of the metal ions to the metal and the deposition of the metal layer on the substrate surface, the concentration of the metal ions within the electrolyte decreases. However, the plating result depends significantly on the concentration of the ions of the metal to be plated within the electrolyte. It is therefore mandatory to maintain the concentration of the ions of the metal to be deposited in the electrolyte.
  • a salt of the respective metal can be added to the electrolyte.
  • the added salt will dissolve in the electrolyte and the metal ions will be reduced to the metal and will be deposited on the substrate surface, the anions of the metal salt will remain in the electrolyte which subsequently influences the features of the electrolyte with respect to, e.g. the density, or the pH-value.
  • the plating process is sensitive also to these features, so that the plating result, especially the thickness distribution of the deposited metal layer, may change over the aging of the electrolyte.
  • a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte is provided.
  • the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separator, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode of the metal to be deposited are electrically connected to a rectifier.
  • Soluble anode in this concern means, that metal ions of the metal to be deposited are dissolved from the soluble anode by applying a current between the soluble anode and the inert electrode in the refreshing tank.
  • the concentration of the ions of the metal to be deposited in the refreshing tank can be controlled by the current density and/or voltage of the current applied to the electrodes in the refreshing tank. Since the refreshing tank and the plating tank are in fluidic connection, the concentration in the plating electrolyte of the ions of the metal to be deposited can be maintained by dissolving metal ions from the soluble anode.
  • this allows maintaining the ion concentration of the metals to be deposited within a narrow range without influencing the other features of the plating electrolyte, like e.g. pH-value, or density.
  • the semi permeable separator separating the at least two compartments of the refreshing tank from each other is at least one of a membrane, a diaphragm, and a micro-porous wall.
  • the second compartment of the refreshing tank in which the inert electrode is located holds an electrolyte which is different from said plating electrolyte.
  • the electrolyte comprised in said second compartment may be a conductive aqueous solution of a conductive salt, like e.g. sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium chloride, potassium chloride, lithium chloride, sodium sulfate, potassium sulfate, lithium sulfate, sodium hydrogen sulfate, potassium hydrogen sulfate, sodium hydrogen carbonate, potassium hydrogen carbonate, and the like.
  • acids like e.g. sulfuric acid, hydrochloric acid can be used.
  • the electrical conductivity between the electrolyte in the plating tank and the electrolyte in the refreshing tank is ⁇ 1*10 ⁇ 4 S, preferably ⁇ 1*10 ⁇ 5 S.
  • the low electrical conductivity between the electrolytes in plating tank and refreshing tank is realized by a galvanic isolation of the electrolytes.
  • the apparatus comprises a drop section within the fluidic connection between the plating tank and the refreshing tank. In the drop section, the fluidic stream of electrolyte between the refreshing tank and the plating tank is dissipated into separated droplets falling from an upper drop section to a lower drop section. While the upper drop section is in electrical contact with the one of the plating tank or refreshing tank, the lower drop section is in electrical contact with the other tank. Due to the separate droplets of electrolyte, the two tanks are electrically/galvanically separated from each other.
  • the fluidic connection between the plating tank and the refreshing tank is long enough to enable an electrical conductivity of ⁇ 1*10 ⁇ 4 S between the two tanks.
  • the diameter and the length of the fluidic connection between the refreshing tank and the plating tank is to be chosen to generate an electrical resistance which is high enough to assure an electrical conductivity of ⁇ 1*10 ⁇ 4 S.
  • the refreshing tank comprises at least two soluble anodes of two different metals to be deposit on the substrate, each of the soluble anodes is connected to a separate rectifier.
  • electrolytes used for co-deposition of metals on a substrate surface can be maintained by the apparatus according to the invention.
  • the concentration of the indium within the plating electrolyte as well as the concentration of the gallium within the plating electrolyte can be maintained.
  • the refreshing tank comprises a separate inert electrode per rectifier.
  • the separate inert electrodes are located in separated compartments, each separated from the compartment holding the electrolyte to be refreshed by a semi permeable separator.
  • the refreshing tank comprises a kettle for holding the fused soluble anode.
  • Said kettle comprises an electrical contact for contacting the fused soluble anode to the rectifier.
  • the kettle is located at the bottom of the refreshing tank.
  • the electrode in the plating tank comprises at least an electrode base body and a screen, said screen reducing the exchange of liquid in the direct environment of the electrode base body.
  • Said screen can be e.g. a fabric screen or an inert metal mesh.
  • the screen is an inert metal mesh which is isolated from said electrode base body and a current is applied to the mesh. By appliance of a current, an electrostatic barrier is formed which further reduces the exchange of liquid in the direct environment of the electrode base body. This further increases the stability of the electrolyte due to the reduced decomposition of electrolyte compounds.
  • the invention relates to a method of refreshing an electrolyte for electrochemical deposition of a metal on a substrate, the method comprising the steps of:
  • the inventive method maintenance of the plating electrolyte with respect to the concentration of the metal ion of the metal to be deposited is enabled with substantially not influencing other features of the plating electrolyte, like e.g. pH-Value or density.
  • the concentration in the electrolyte of the ions of the metal to be deposited is analyzed and the current and/or voltage of the rectifier or rectifiers in the refreshing tank is set to maintain a concentration of the metal to be deposited within a variation limit of ⁇ 3% by weight, preferably ⁇ 2% by weight, most preferred ⁇ 1% by weight.
  • Appropriate methods for analyzing the concentration of the respective metal ions are, e.g. IR-spectroscopy, AAS (atom absorption spectroscopy), UV-VIS analysis, or titrimetric analysis.
  • the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal form an alkaline electrolyte.
  • the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal of the group consisting of gallium, indium, and thallium.
  • FIG. 1 shows a schematic view of an apparatus according to the invention
  • FIG. 2 shows a schematic view of an apparatus according to the invention having a screen shielded electrode
  • FIG. 3 shows a drop section as it can be comprised in an apparatus according to the invention.
  • FIG. 1 shows a schematic view of an apparatus 100 according to the invention.
  • the apparatus 100 for the electrochemical deposition of a metal on a substrate 900 comprises a plating tank 110 holding a plating electrolyte 500 and a refreshing tank 400 .
  • the refreshing tank 400 is in fluidic connection 200 / 210 to the plating tank 110 for refreshing the plating electrolyte 500 .
  • the plating tank 110 comprises an inert electrode 120 electrically connected to the substrate 900 by a rectifier 190 .
  • a current is applied by the rectifier 190 .
  • the refreshing tank 400 comprises a first compartment 410 and a second compartment 420 , wherein the compartments 410 / 420 are separated from each other by a semi permeable separator 430 .
  • An appropriate separator 430 e.g. a membrane, a diaphragm, and a micro-porous wall.
  • the first compartment 410 comprises at least one soluble anode 440 of a metal to be deposited on the substrate 900 .
  • the second compartment comprises at least one inert electrode 450 .
  • the inert electrode 450 and the soluble anode 440 are electrically connected to a rectifier 490 .
  • the refreshing tank may comprise a kettle 445 to hold the fused soluble anode.
  • the kettle comprises an electrical contact 446 for contacting the fused soluble anode to the rectifier 490 .
  • FIG. 2 shows an embodiment of the inventive apparatus 100 in which the electrode 120 on the plating tank 110 is covered by a screen 150 .
  • the screen 150 may be a fabric reducing the liquid exchange in the near environment of the electrode 150 . Due to the reduced liquid exchange, less electrolyte 500 is brought into direct contact with the surface of the electrode 120 . Since decomposition of other components of the electrolyte 500 take place on the surface of the electrode 120 , the reduced liquid exchange results in less decomposition of electrolyte components, like e.g. organic additives. This further increases the stability of the electrolyte and elongates the electrolytes life time.
  • FIG. 3 shows a drop section 800 as it may be comprised in the fluidic connection 200 and/or 210 connecting the plating tank 110 to the refreshing tank 400 .
  • the drop section 800 is capable to electrically isolate the plating tank 110 from the refreshing tank 400 .
  • the drop section 800 comprises an inlet connected to the fluidic connection 200 or 210 .
  • the electrolyte entering the drop section 800 by the inlet 810 is guided to a strainer 820 separating the electrolyte into droplets 830 .
  • the droplets 830 are collected in a receiving section 840 , to which receiving section 840 an outlet 850 is connected.
  • the outlet is connected to the fluidic connection 210 or 200 , respectively.
  • the apparatus comprises two drop sections 800 , one in each of the fluidic connections 200 and 210 .

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
US14/234,080 2011-07-20 2012-07-20 Apparatus for electrochemical deposition of a metal Abandoned US20140158545A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11174683.0 2011-07-20
EP11174683.0A EP2548998B1 (en) 2011-07-20 2011-07-20 Apparatus for electrochemical deposition of a metal
PCT/US2012/047535 WO2013013119A1 (en) 2011-07-20 2012-07-20 Apparatus for electrochemical deposition of a metal

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017014944A1 (en) * 2015-07-17 2017-01-26 Applied Materials, Inc. Inert anode electroplating processor and replenisher
JP2018168434A (ja) * 2017-03-30 2018-11-01 株式会社荏原製作所 めっき方法及びめっき装置
US20220010447A1 (en) * 2018-01-22 2022-01-13 Alpha-En Corporation System and process for producing lithium
WO2022260735A1 (en) * 2021-06-10 2022-12-15 Eci Technology, Inc. Non-reagent methods and process control for measuring and monitoring halide concentrations in electrodeposition solutions for iron triad metals and their alloys
US20240060200A1 (en) * 2021-08-23 2024-02-22 Unison Industries, Llc Electroforming system and method

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Publication number Priority date Publication date Assignee Title
DE102020133581A1 (de) 2020-12-15 2022-06-15 Technische Universität Hamburg Verfahren und Vorrichtung zum Aufbringen eines Nanolaminats an metallischen Werkstücken

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Publication number Priority date Publication date Assignee Title
WO2017014944A1 (en) * 2015-07-17 2017-01-26 Applied Materials, Inc. Inert anode electroplating processor and replenisher
US10227707B2 (en) 2015-07-17 2019-03-12 Applied Materials, Inc. Inert anode electroplating processor and replenisher
JP2018168434A (ja) * 2017-03-30 2018-11-01 株式会社荏原製作所 めっき方法及びめっき装置
US20220010447A1 (en) * 2018-01-22 2022-01-13 Alpha-En Corporation System and process for producing lithium
US12018397B2 (en) * 2018-01-22 2024-06-25 Alpha-En Corporation System and process for producing lithium
WO2022260735A1 (en) * 2021-06-10 2022-12-15 Eci Technology, Inc. Non-reagent methods and process control for measuring and monitoring halide concentrations in electrodeposition solutions for iron triad metals and their alloys
US20240060200A1 (en) * 2021-08-23 2024-02-22 Unison Industries, Llc Electroforming system and method

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ES2546065T3 (es) 2015-09-18
EP2548998B1 (en) 2015-07-01
EP2548998A1 (en) 2013-01-23

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