WO2013013119A1 - Apparatus for electrochemical deposition of a metal - Google Patents

Apparatus for electrochemical deposition of a metal Download PDF

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Publication number
WO2013013119A1
WO2013013119A1 PCT/US2012/047535 US2012047535W WO2013013119A1 WO 2013013119 A1 WO2013013119 A1 WO 2013013119A1 US 2012047535 W US2012047535 W US 2012047535W WO 2013013119 A1 WO2013013119 A1 WO 2013013119A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrolyte
metal
tank
refreshing
compartment
Prior art date
Application number
PCT/US2012/047535
Other languages
English (en)
French (fr)
Inventor
Stefan Schäfer
Christine Fehlis
Marlies Kleinfeld
Original Assignee
Enthone Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone Inc. filed Critical Enthone Inc.
Priority to US14/234,080 priority Critical patent/US20140158545A1/en
Publication of WO2013013119A1 publication Critical patent/WO2013013119A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation
    • C25D21/14Controlled addition of electrolyte components
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/16Regeneration of process solutions
    • C25D21/18Regeneration of process solutions of electrolytes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/54Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50

Definitions

  • US 20100140098 Al discloses a selenium containing electrodeposition solutions used to manufacture solar cell absorber layers.
  • an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material.
  • methods of electroplating using electrodeposition solutions are also described.
  • an apparatus for the electrochemical deposition of a metal on a substrate comprising a plating tank holding a plating electrolyte and a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte, wherein the plating tank comprises an inert electrode electrically connected to the substrate by a rectifier, and wherein the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separator, wherein the first compartment comprises at least one soluble anode of a metal to be CEDE 2420.1
  • the inert electrode and the soluble anode of the metal to be deposited are electrically connected to a rectifier.
  • Soluble anode in this concern means, that metal ions of the metal to be deposited are dissolved from the soluble anode by applying a current between the soluble anode and the inert electrode in the refreshing tank. Accordingly, the concentration of the ions of the metal to be deposited in the refreshing tank can be controlled by the current density and/or voltage of the current applied to the electrodes in the refreshing tank. Since the refreshing tank and the plating tank are in fluidic connection, the concentration in the plating electrolyte of the ions of the metal to be deposited can be maintained by dissolving metal ions from the soluble anode. Advantageously, this allows maintaining the ion
  • the fluidic connection between the plating tank and the refreshing tank is long enough to enable an electrical conductivity of ⁇ 1 * 10 ⁇ 4 S between the two tanks.
  • the diameter and the length of the fluidic connection between the refreshing tank and the plating tank is to be chosen to generate an electrical resistance which is high enough to assure an electrical conductivity of ⁇ 1* 10 "4 S.
  • the refreshing tank comprises a separate inert electrode per rectifier.
  • the separate inert electrodes are located in separated compartments, each separated from the compartment holding the electrolyte to be refreshed by a semi permeable separator.
  • the invention relates to a method of refreshing an electrolyte for electrochemical deposition of a metal on a substrate, the method comprising the steps of:
  • FIG. 1 shows a schematic view of an apparatus 100 according to the invention.
  • the apparatus 100 for the electrochemical deposition of a metal on a substrate 900 comprises a plating tank 110 holding a plating electrolyte 500 and a refreshing tank 400.
  • the refreshing tank 400 is in fluidic connection 200/210 to the plating tank 110 for refreshing the plating electrolyte 500.
  • the plating tank 1 10 comprises an inert electrode 120 electrically connected to the substrate 900 by a rectifier 190. For the deposition of a metal layer on the substrate 900 a current is applied by the rectifier 190.
  • the second compartment comprises at least one inert electrode 450.
  • the inert electrode 450 and the soluble anode 440 are electrically connected to a rectifier 490.
  • a rectifier 490 By appliance of a current between the soluble anode 440 and the inert electrode 450 metal ions are dissolved from the soluble anode 440.
  • Fig. 2 shows an embodiment of the inventive apparatus 100 in which the electrode 120 on the plating tank 1 10 is covered by a screen 150.
  • the screen 150 may be a fabric reducing the liquid exchange in the near environment of the electrode 150. Due to the reduced liquid exchange, less electrolyte 500 is brought into direct contact with the surface of the electrode 120. Since decomposition of other components of the electrolyte 500 take place on the surface of the electrode 120, the reduced liquid exchange results in less decomposition of electrolyte components, like e.g. organic additives. This further increases the stability of the electrolyte and elongates the electrolytes life time.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/US2012/047535 2011-07-20 2012-07-20 Apparatus for electrochemical deposition of a metal WO2013013119A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/234,080 US20140158545A1 (en) 2011-07-20 2012-07-20 Apparatus for electrochemical deposition of a metal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11174683.0 2011-07-20
EP11174683.0A EP2548998B1 (en) 2011-07-20 2011-07-20 Apparatus for electrochemical deposition of a metal

Publications (1)

Publication Number Publication Date
WO2013013119A1 true WO2013013119A1 (en) 2013-01-24

Family

ID=46584409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/047535 WO2013013119A1 (en) 2011-07-20 2012-07-20 Apparatus for electrochemical deposition of a metal

Country Status (4)

Country Link
US (1) US20140158545A1 (es)
EP (1) EP2548998B1 (es)
ES (1) ES2546065T3 (es)
WO (1) WO2013013119A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10227707B2 (en) * 2015-07-17 2019-03-12 Applied Materials, Inc. Inert anode electroplating processor and replenisher
JP6781658B2 (ja) * 2017-03-30 2020-11-04 株式会社荏原製作所 めっき方法及びめっき装置
US20190226108A1 (en) * 2018-01-22 2019-07-25 Alpha-En Corporation System and process for producing lithium
DE102020133581A1 (de) 2020-12-15 2022-06-15 Technische Universität Hamburg Verfahren und Vorrichtung zum Aufbringen eines Nanolaminats an metallischen Werkstücken
IL309033A (en) * 2021-06-10 2024-02-01 Kla Corp Reagent-free methods and process control for measuring and monitoring halide concentrations in electrodeposition solutions for triferrous metals and their alloys

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021398A (ja) * 1983-07-12 1985-02-02 Rihei Tomono 合金めつき方法及び合金めつき装置
US4824534A (en) * 1984-09-19 1989-04-25 Hoechst Aktiengesellschaft Process for electrically separating the electrolyte-bearing mains from the electrolyte spaces of an electrochemical cell pile
DE19539865A1 (de) * 1995-10-26 1997-04-30 Lea Ronal Gmbh Durchlauf-Galvanikanlage
JP2003055799A (ja) * 2001-08-15 2003-02-26 Furukawa Electric Co Ltd:The 合金めっき方法および前記めっき方法で用いる合金めっき液製造装置
US20040206390A1 (en) 2000-04-10 2004-10-21 Bhattacharya Raghu Nath Preparation of CIGS-based solar cells using a buffered electrodeposition bath
WO2009016291A2 (fr) * 2007-07-12 2009-02-05 Siemens Vai Metals Technologies Sas Installation et procede pour l'etamage electroly tique de bandes d' acier
US20090173634A1 (en) 2006-09-27 2009-07-09 Solopower, Inc. Efficient gallium thin film electroplating methods and chemistries
US20090315148A1 (en) 2008-06-20 2009-12-24 Serdar Aksu Electroplating method for depositing continuous thin layers of indium or gallium rich materials
US20100059385A1 (en) 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
US20100140098A1 (en) 2008-05-15 2010-06-10 Solopower, Inc. Selenium containing electrodeposition solution and methods
US20100317129A1 (en) 2006-04-04 2010-12-16 Solopower, Inc. Composition control for photovoltaic thin film manufacturing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB564053A (en) * 1942-06-22 1944-09-11 Gen Motors Corp Improvements in the electrodeposition of indium
US3291889A (en) * 1966-02-18 1966-12-13 Union Carbide Corp Dielectric interrupter
US4094675A (en) * 1973-07-23 1978-06-13 Licentia Patent-Verwaltungs-G.M.B.H. Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer
US4251328A (en) * 1980-03-20 1981-02-17 General Electric Company Gallium plating
US4499852A (en) * 1980-07-15 1985-02-19 Shipley Company Inc. Apparatus for regulating plating solution in a plating bath
US4826579A (en) * 1982-06-25 1989-05-02 Cel Systems Corporation Electrolytic preparation of tin and other metals
US20110005586A1 (en) * 2009-07-10 2011-01-13 Solopower, Inc. Electrochemical Deposition Methods for Fabricating Group IBIIIAVIA Compound Absorber Based Solar Cells

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021398A (ja) * 1983-07-12 1985-02-02 Rihei Tomono 合金めつき方法及び合金めつき装置
US4824534A (en) * 1984-09-19 1989-04-25 Hoechst Aktiengesellschaft Process for electrically separating the electrolyte-bearing mains from the electrolyte spaces of an electrochemical cell pile
DE19539865A1 (de) * 1995-10-26 1997-04-30 Lea Ronal Gmbh Durchlauf-Galvanikanlage
US20040206390A1 (en) 2000-04-10 2004-10-21 Bhattacharya Raghu Nath Preparation of CIGS-based solar cells using a buffered electrodeposition bath
JP2003055799A (ja) * 2001-08-15 2003-02-26 Furukawa Electric Co Ltd:The 合金めっき方法および前記めっき方法で用いる合金めっき液製造装置
US20100317129A1 (en) 2006-04-04 2010-12-16 Solopower, Inc. Composition control for photovoltaic thin film manufacturing
US20090173634A1 (en) 2006-09-27 2009-07-09 Solopower, Inc. Efficient gallium thin film electroplating methods and chemistries
WO2009016291A2 (fr) * 2007-07-12 2009-02-05 Siemens Vai Metals Technologies Sas Installation et procede pour l'etamage electroly tique de bandes d' acier
US20100140098A1 (en) 2008-05-15 2010-06-10 Solopower, Inc. Selenium containing electrodeposition solution and methods
US20090315148A1 (en) 2008-06-20 2009-12-24 Serdar Aksu Electroplating method for depositing continuous thin layers of indium or gallium rich materials
US20100059385A1 (en) 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells

Also Published As

Publication number Publication date
EP2548998A1 (en) 2013-01-23
ES2546065T3 (es) 2015-09-18
EP2548998B1 (en) 2015-07-01
US20140158545A1 (en) 2014-06-12

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