US20130098871A1 - Internal Split Faraday Shield for an Inductively Coupled Plasma Source - Google Patents

Internal Split Faraday Shield for an Inductively Coupled Plasma Source Download PDF

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Publication number
US20130098871A1
US20130098871A1 US13/277,072 US201113277072A US2013098871A1 US 20130098871 A1 US20130098871 A1 US 20130098871A1 US 201113277072 A US201113277072 A US 201113277072A US 2013098871 A1 US2013098871 A1 US 2013098871A1
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Prior art keywords
plasma
plasma chamber
particle beam
charged particle
conductive shield
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Abandoned
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US13/277,072
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English (en)
Inventor
Tom Miller
Shouyin Zhang
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FEI Co
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FEI Co
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Priority to US13/277,072 priority Critical patent/US20130098871A1/en
Assigned to FEI COMPANY reassignment FEI COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MILLER, TOM, Zhang, Shouyin
Priority to JP2012208991A priority patent/JP2013089594A/ja
Priority to CN201210396411.8A priority patent/CN103107055B/zh
Priority to EP12189159.2A priority patent/EP2584583A3/en
Publication of US20130098871A1 publication Critical patent/US20130098871A1/en
Priority to US14/325,146 priority patent/US9818584B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Definitions

  • the present invention relates to inductively-coupled plasma ion sources for focused beam systems.
  • Plasma ion technology is commonly used for semiconductor wafer processing. Ion sources designed to process an entire semiconductor wafer are required to provide a uniform beam of ions over a broad area, such as over a 300 mm wafer.
  • One application of such plasma systems would be to remove photoresist.
  • the plasma produces a reactive species, such as monatomic fluorine or oxygen, that reacts with the photoresist to turn it to ash, which is subsequently removed by the vacuum pump. Because the ashing is performed by a reactive species, rather than by sputtering, the energy of the ions impacting the work piece can be relatively low and the voltage difference between the interior of the plasma chamber and the work piece is generally low.
  • the requirements for plasma sources used in focused beam systems are significantly different requirements from those used in whole wafer processing systems.
  • Ion or electron beams are focused to sub-micron spots.
  • the focusing system typically projects a demagnified image of the virtual ion source onto the sample, the virtual ion source from which the charged particles are emitted should be small to produce a small spot on the sample. That is, the ion source should provide a relatively large number of ions coming from a small area.
  • the energies of all the charged particles in the beam must be similar, or chromatic aberration will prevent the charged particles from focusing to a fine point.
  • Inductively coupled (IC) plasma sources have advantages over other types of plasma sources when used with a focusing column to form a focused beam of charged particles, i.e., ions or electrons.
  • the inductively coupled plasma source is capable of providing charged particles within a narrow energy range, which allows the particles to be focused to a small spot.
  • IC plasma sources such as the one described in U.S. Pat. No. 7,241,361, to Keller et al. for a “Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System,” which is assigned to the assignee of the present invention and is here by incorporated by reference, include a radio frequency (RF) antenna typically wrapped around a ceramic plasma chamber. The RF antenna provides energy to maintain the gas in an ionized state within the chamber.
  • RF radio frequency
  • Focused charged particle beam systems are often used to etch or deposit material or to form an image of a work piece and the charged particles are accelerated to relatively high energies by a voltage difference between the source and the work piece.
  • Ions in a focused ion beam typically impact the work piece with landing energies of between 5 keV and 100 keV, more typically at about 30 keV.
  • Electron landing energies vary between about 500 eV to 5 keV for a scanning electron microscope system to several hundred thousand electron volts for a transmission electron microscope system.
  • the work piece is typically maintained at or near ground potential, and the plasma source is maintained at a high voltage, either positive or negative, depending on the particles used to form the beam.
  • High voltage as used herein means positive or negative voltage greater than about 500 V above or below ground potential. For the safety of operating personnel, it is necessary to electrically isolate the high voltage components. The electrical isolation of the high voltage plasma creates several design problems that are difficult to solve in light of other goals for a plasma source design.
  • the radio frequency coils that provide power to the plasma are placed as close as possible to the plasma to efficiently transfer power, but having a difference in voltage across a small distance leads to arcing, which can damage the system.
  • the plasma is maintained at a high DC voltage, while the radio frequency coils are typically oscillated at an RF voltage that is high, but lower than the DC voltage of the plasma.
  • One way to eliminate much of the voltage difference between the plasma and the coil would be to maintaining the coils at a DC bias equal to the high potential as the plasma. This solution, however, would require maintaining the power supply for the coil at the high plasma potential, which would excessively complicate the power supply design and greatly increase the cost.
  • FIG. 1 shows schematically a typical prior art plasma source 100 for use in a focused ion beam system.
  • the plasma source 100 includes a plasma chamber 102 .
  • Plasma 104 is maintained within the plasma chamber 102 .
  • a plasma extraction and biasing electrode 106 encloses the bottom portion of plasma chamber 102 .
  • Electrode 106 has an exterior high voltage connection to a bias voltage source 107 that is used to bias the plasma to its target potential, typically to 30 kV for most charged particle beam applications. Electrons or ions are directed from the plasma source through opening 112 to a work piece.
  • a split Faraday shield 108 is placed between plasma chamber 102 and RF coils 110 .
  • Shield 108 is typically well grounded, and cooling fluids can be delivered in the space between plasma chamber 102 and RF coils 110 .
  • a Faraday shield can help prevent RF induced energy spread.
  • Faraday shield for plasma ion sources are described, for example, in Johnson, Wayne L., “Electrostatically-Shielded Inductively-Coupled RF Plasma Sources,” H IGH DENSITY P LASMA SOURCES : D ESIGN AND P HYSICS AND P ERFORMANCE , Popov, Oleg, A., Ed. (1995).
  • the grounded Faraday shield isolates the high DC voltage plasma from the radio frequency coil potential and reduces capacitive coupling between the coil and the plasma.
  • the large electric field caused by the voltage difference between the grounded shield and the plasma being biased to the necessary accelerating voltage causes the possibility of a high voltage discharge which could damage the source.
  • the presence of air trapped between the Faraday shield and the ceramic also causes the potential for arcing in that region.
  • Faraday shield between the plasma chamber and the antenna also inevitably leads to the antenna being placed further away from the plasma vessel, which can cause complications including arcing from the antenna to the shield and from the shield to the plasma. Furthermore, Faraday shields may have sharp edges which cause additional high voltage management concerns.
  • the Faraday shield can complicate the cooling methods. Fluids in contact with the shield must not erode or oxidize the shield, and the choice of cooling fluid may also be limited by the dielectric concerns associated with the high voltage management at the sharp edges of the Faraday shield.
  • M. Dickson, et al. “Radial Uniformity of an External-Coil Ionized Physical Vapor Deposition Source,” J. Vac. Sci. Tech. B 16(2) (1998), describes a plasma system for ionized physical vapor deposition of metal onto wafers.
  • the plasma ions bombard a metal target, and the metal sputtered from the target are ionized and directed toward the wafer below by the plasma sheath. Because the sputtered metal from the target will quickly form an electrical path around the inside of the quartz chamber, a water-cooled metal Faraday shield is used inside the plasma chamber.
  • the Faraday shield within the plasma chamber acts as a baffle for sputtered metal and protects the dielectric walls of the plasma chamber from thick deposits of metal film.
  • the water-cooling lines are electrically isolated from ground and connected through isolated radio frequency power feedthroughs.
  • the large, wafer scale plasma chamber of M. Dickson, et al. facilitates the engineering of the Faraday shield within the large plasma
  • An object of the invention is to reduce capacitive coupling to the plasma in charged particle beam systems in order to have a desirably low energy spread for beam forming purposes.
  • This invention provides a Faraday shield within the plasma chamber of a focusing charged particle beam system, with the Faraday shield either biased to the plasma potential or a substantial fraction of it.
  • FIG. 1 shows a prior art plasma source that uses an external Faraday shield.
  • FIG. 2 shows an embodiment of the invention in which the Faraday shield is placed within the plasma chamber.
  • FIG. 3 shows the steps of using the embodiment in FIG. 2 .
  • FIG. 4 shows a longitudinal cross-sectional schematic view of a plasma source that uses an internal Faraday shield for reduced coupling in conjunction with a fluid in the exterior of the plasma chamber for cooling.
  • FIG. 5 shows a view of a flat, split Faraday shield.
  • Embodiments of the invention can provide excellent coupling between the RF coil and the plasma, efficient cooling of the plasma chamber, and excellent capacitive screening, all of which can help produce an inductively-coupled plasma that is dense, quiescent, and at a high potential.
  • a plasma source of the present invention can be used for an electron beam system, or other system.
  • shield Faraday shield, electrostatic shield, and capacitive shield are equivalent.
  • a preferred embodiment uses a Faraday shield that is internal to the plasma chamber, that is, a Faraday shield within the walls of the plasma chamber.
  • a Faraday shield that is internal to the plasma chamber, that is, a Faraday shield within the walls of the plasma chamber.
  • Prior art plasma sources for focused beam systems have not used an internal split Faraday shield because the design difficulties, such as excessive heating and were known, while the extent of the advantages of an internal shield for a system with probe-forming optics was not appreciated.
  • Applicants have found several advantages to having an internal Faraday shield. Eliminating the external Faraday shield, the radio frequency coils can be placed closer to the plasma tube, leading to higher coupling efficiency.
  • an internal Faraday shield allows for more flexibility in designing a cooling system because the space outside the plasma tube is clearer. Also, the erosion of the shield material caused by the interaction with the cooling fluid is avoided.
  • the Faraday shield in most embodiments of the present invention is not liquid cooled.
  • the plasma source of the present invention is used as a source of ions for a probe forming system, that is, the ions leave the plasma chamber and are formed into a beam that is focused onto a sample.
  • the work piece is not placed in the plasma chamber.
  • FIG. 2 shows a plasma source 200 of a charged particle beam system used in an embodiment of the present invention.
  • a Faraday shield 202 is positioned within plasma chamber 102 .
  • Shield 202 is conductive and is placed in electrical contact with electrode 106 so that the Faraday shield, along with plasma 104 , is biased by a bias voltage source 107 to a target potential, typically 30 kV, for charged particle beam processes.
  • a target potential typically 30 kV
  • having an internal shield 202 allows RF coils 110 to be placed closer to the plasma chamber, leading to a higher coupling efficiency.
  • the Faraday shield is designed in such a manner that with the operational parameters of the plasma source, the energy spread of ions is kept less than 40 eV, more preferably less than 20 eV, and most preferably less than 6 eV. Maintaining this level of energy spread will also prevent sputtering of the plasma source aperture.
  • Shield 202 can be comprised of any conductive material that is compatible with the environment inside of plasma chamber 102 .
  • shield 202 may be composed of copper, silver-plated copper or other highly conductive metals.
  • Shield 202 can be a metal layer plated or otherwise coated onto the interior wall of the plasma chamber 102 , or it can be an insertable sleeve.
  • a conductor outside the RF coils 110 forms a ground plane to isolate the high voltage plasma chamber and RF coils from the system operator.
  • embodiments of the invention provide a method of distributing heat from the internal Faraday shield to the walls of plasma chamber 102 and/or the electrode 106 .
  • the internal Faraday shield also effectively extends the contact area of the bias potential along the axis of the plasma containment, and as such, provides better biasing of the plasma and leads to less possibility of bias voltage differences along the plasma chamber axis, resulting in a better energy spread. It is preferable to have a single electrical connection provide bias both to the Faraday shield and the extraction aperture.
  • the focusing column that focuses the charged particles extracted from the plasma source typically includes a beam defining aperture 210 , deflectors 212 , and at least one lens 214 for focusing the particles onto the sample 216 .
  • FIG. 3 shows the steps of using the embodiment in FIG. 2 .
  • Step 302 involves providing radio frequency energy into a plasma chamber in order to maintain the plasma.
  • Step 304 involves providing an internal split Faraday shield within the plasma chamber to reduce capacitive coupling between the source of the radio frequency and the plasma.
  • Step 306 involves maintaining the plasma and the Faraday shield at an electrical potential different from the ground potential, typically at a voltage greater than 100 V, greater than 1000 V or greater than 10,000 V. This is achieved by having the shield in contact with a biasing electrode.
  • the Faraday shield could be “floating,” that is, passively, not actively, biased but being in contact with the plasma and floating at near the plasma voltage.
  • step 308 involves extracting charged particles from the plasma chamber using extraction optics and focusing the charged particles onto a workpiece.
  • a cooling fluid can also be provided in the exterior of the plasma chamber in order to cool the plasma chamber.
  • Other cooling methods such as the use of a non-circulating coolant or heat tubes, are described in U.S. patent application Ser. No. 13/165,556 of Kellogg, et al. for “Encapsulation of Electrode in Solid Media for use in Conjunction with Fluid High Voltage Isolation,” which is assigned to the assignee of the present invention.
  • the cooling methods described in U.S. patent application Ser. No. 13/165,556 can be used with the internal Faraday shield described herein.
  • FIG. 4 shows a longitudinal cross-sectional schematic view of a plasma source 400 that uses an internal Faraday shield for reduced coupling with a fluid in the exterior of the plasma chamber for cooling.
  • the plasma source 400 includes a dielectric plasma chamber 402 having an interior wall 404 and an exterior wall 406 .
  • Plasma chamber 402 rests on a conductive base plate electrode 410 .
  • Plasma 412 is maintained within the plasma chamber 402 .
  • Extraction optics 414 extract charged particles, ion or electrons depending on the application, from plasma 412 through an opening 416 in base electrode 410 .
  • a dielectric outer shell 420 preferably of ceramic or plastic material that transmits radio frequency energy with minimal loss defines a space 422 between outer shell 420 and plasma chamber outer wall 406 .
  • a Faraday shield 444 is located within the plasma chamber 402 such that the Faraday shield is between the interior wall 404 and the plasma 412 .
  • a pump 424 pumps a cooling fluid 426 from a reservoir/chiller 427 to space 422 through cooling fluid inlets 428 and exit through exit 432 , cooling plasma chamber 402 by thermal transfer from outer wall 406 .
  • Gas is provided to the plasma chamber 406 by inlet 452 .
  • a ground shield 454 shield the plasma chamber from the operator's environment.
  • a typical prior art Faraday shield is well grounded and located on the exterior of the plasma chamber, resulting in rapid electric potential drops between the plasma region and the shield. These rapid electric potential drops impose limitations on the materials inserted between the plasma region and the conductive Faraday shield. In the prior art, only materials with sufficiently large dielectric strength to prevent arcing can be inserted in this region. However, because the present invention has internal Faraday shield 444 , which is biased to a target potential, essentially any type of material can be used within space 422 because there are no rapid potential drops and arcing is significantly reduced. Dielectric breakdown resulting from the cooling fluid can thus be prevented by having an internal shield, and a wide variety of cooling fluids, even those without adequate dielectric constants, can be used to cool plasma chamber 402 . As used herein, a “fluid” can comprise a liquid or a gas.
  • the cooling method involves a liquid coolant which is chosen to be free of gaseous bubbles or other impurities which could present the opportunity for field enhancement and gaseous electric discharge.
  • the cooling fluid should also have sufficient heat capacity to prevent the plasma chamber 402 from overheating without requiring a large fluid flow that requires a large pump that would consume excessive power.
  • the plasma chamber outer wall 406 is typically maintained at a temperature of less than about 50° C.
  • the internal Faraday shield 444 passes the radio frequency energy from RF coils 446 to energize the plasma while reducing the capacitive coupling between radio frequency coils 446 and plasma 412 .
  • the Faraday shield 444 is protected from physical damage by being substantially encapsulated in a solid dielectric media, such as ceramic, glass, resin, or polymer, to eliminate high voltage discharge.
  • RF coils 446 may be hollow and cooled by flow of a fluid coolant through the internal passages 447 in the coils. Alternatively, coolant can flow over the exterior of the RF coils.
  • the plasma chamber coolant system may also pump fluid coolant through the coils, or the coils can have an independent cooling system.
  • the shield is a split Faraday shield.
  • the internal Faraday shield is wrapped around to form a cylindrical shape.
  • FIG. 5 shows a view of a flat, split Faraday shield 500 that can be used in some embodiments of the present invention.
  • Faraday shield 500 is “split” and has vertical slots 502 .
  • the vertical slots reduce induced currents that drain energy from the radio frequency coils and produce heat.
  • the width, length, and quantity of slots 502 can be altered in order to result in an appropriate level of capacitance coupling and modulation.
  • a plasma source including:
  • one or more focusing lenses for focusing charged particles from the plasma source onto a sample.
  • the system includes a biasing electrode for electrically biasing the conductive shield to a desired voltage.
  • the conductive shield comprises a layer coated onto the interior wall of the plasma chamber.
  • the conductive shield comprises a thin conductive foil inserted within the plasma chamber.
  • the charged particle beam system further comprising a cooling fluid surrounding and in thermal contact with at least a portion of the plasma chamber.
  • the cooling fluid comprises air or a liquid.
  • the conductive shield is maintained at substantially the same voltage as the exterior boundary of the plasma sheath.
  • the conductive shield is electrically isolated and during operation is maintained at substantially the same electrical potential as the external boundary of the plasma sheath.
  • the conductive shield is maintained at a voltage having a magnitude of between 500V and 100 kV or between 5000V and 50000V.
  • the plasma is biased to produce a landing energy of the charged particles of between 500 eV and 100 keV.
  • the conductive shield and plasma are maintained at an electrical potential different from ground potential.
  • the conductive shield is a split Faraday shield and in some embodiments, the split Faraday shield is wrapped around to form a cylindrical shape within the plasma chamber.
  • plasma temperature is kept low enough to avoid sputtering of the conductive shield within the plasma chamber.
  • the conductive shield distributes heat from the plasma to the walls of the plasma chamber.
  • the conductor for providing radio frequency energy into the plasma chamber includes internal passages for passage of a cooling fluid.
  • the method further comprises providing a cooling fluid to cool the plasma chamber.
  • providing a conductive shield includes providing a conductive shield coated onto the interior wall of the plasma chamber.
  • providing a conductive shield includes providing a conductive material inserted into the interior of the plasma chamber.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
US13/277,072 2011-10-19 2011-10-19 Internal Split Faraday Shield for an Inductively Coupled Plasma Source Abandoned US20130098871A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/277,072 US20130098871A1 (en) 2011-10-19 2011-10-19 Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP2012208991A JP2013089594A (ja) 2011-10-19 2012-09-22 誘導結合プラズマ源用の内部分割ファラデー・シールド
CN201210396411.8A CN103107055B (zh) 2011-10-19 2012-10-18 带电粒子束系统和操作等离子源的方法
EP12189159.2A EP2584583A3 (en) 2011-10-19 2012-10-19 Internal split faraday shield for an inductively coupled plasma source
US14/325,146 US9818584B2 (en) 2011-10-19 2014-07-07 Internal split faraday shield for a plasma source

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Application Number Priority Date Filing Date Title
US13/277,072 US20130098871A1 (en) 2011-10-19 2011-10-19 Internal Split Faraday Shield for an Inductively Coupled Plasma Source

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US14/325,146 Division US9818584B2 (en) 2011-10-19 2014-07-07 Internal split faraday shield for a plasma source

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US14/325,146 Active 2032-04-30 US9818584B2 (en) 2011-10-19 2014-07-07 Internal split faraday shield for a plasma source

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EP (1) EP2584583A3 (ja)
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