US20130026522A1 - Surface-mount light emitting device - Google Patents

Surface-mount light emitting device Download PDF

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Publication number
US20130026522A1
US20130026522A1 US13/559,676 US201213559676A US2013026522A1 US 20130026522 A1 US20130026522 A1 US 20130026522A1 US 201213559676 A US201213559676 A US 201213559676A US 2013026522 A1 US2013026522 A1 US 2013026522A1
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resin composition
light emitting
reflector
silicone
heat curable
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US13/559,676
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Toshio Shiobara
Yusuke TAGUCHI
Tsutomu Kashiwagi
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Assigned to SHIN-ETSU CHEMICAL CO., LTD. reassignment SHIN-ETSU CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KASHIWAGI, TSUTOMU, SHIOBARA, TOSHIO, TAGUCHI, YUSUKE
Publication of US20130026522A1 publication Critical patent/US20130026522A1/en
Priority to US13/956,461 priority Critical patent/US8846420B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Definitions

  • This invention relates to a surface-mount light emitting device having improved impact strength, heat resistance and light resistance.
  • LED light emitting diodes
  • PPA polyphthalamide
  • epoxy resins containing acid anhydride as the curing agent are also used as the reflector material. Meanwhile it is in a rapid progress to increase the light intensity of LED devices, which are used as the backlight unit for LC displays and the light source for general illuminations. In these applications, the LED must meet rigorous requirements of reliability and durability.
  • thermoplastic resins such as PPA, liquid crystal polymers, and heat curable resins such as epoxy resins are commonly used as the reflector, they cannot be used in the environment accompanying simultaneous exposure to both heat and light, because they can be substantially degraded, discolored, and reduced in light reflectivity.
  • Patent Documents 1 to 6, 8 and 9 Potential use of heat curable resins such as epoxy resins and silicone resins as the LED reflector material is described in Patent Documents 1 to 6, 8 and 9. Also a matrix array of reflectors is described in Patent Document 7.
  • LED reflectors made of such heat curable resins are in commercial use.
  • the wall defining a side surface of the reflector becomes thinner, with most walls being as thin as about 100 ⁇ m.
  • thinning of the side wall gives rise to no substantial problems because the resins themselves are tough.
  • heat curable resins are generally brittle as compared with thermoplastic resins.
  • reflectors made of heat curable resins have the serious problem that they are prone to break by impact.
  • Patent Document 1 JP-A 2006-156704
  • Patent Document 2 JP-A 2007-329219
  • Patent Document 3 JP-A 2007-329249
  • Patent Document 4 JP-A 2008-189827
  • Patent Document 5 JP-A 2006-140207
  • Patent Document 6 JP-A 2007-235085
  • Patent Document 7 JP-A 2007-297601
  • Patent Document 8 JP-A 2009-021394
  • Patent Document 9 JP-A 2009-155415
  • An object of the invention is to provide a surface-mount light emitting device having improved impact strength as well as heat resistance and light resistance. Such improvements are made by molding the reflector from a heat curable resin composition and using a heat curable resin composition having a cured hardness of at least 30 Shore D units as the encapsulant.
  • the invention pertains to a light-emitting device comprising a reflector molded from a heat curable resin composition having a recess and an encapsulating resin composition such as silicone resin composition which is cast and cured in the recess.
  • a light-emitting device comprising a reflector molded from a heat curable resin composition having a recess and an encapsulating resin composition such as silicone resin composition which is cast and cured in the recess.
  • the inventors have found that when the side wall of the reflector molded from a heat curable resin composition has a thickness in the range of 50 to 500 ⁇ m, the light emitting device is improved in impact strength, adhesion, and discoloration resistance by using an encapsulating resin composition having a hardness of at least 30 Shore D units in the cured state.
  • the invention provides a surface-mount light emitting device comprising a light emitting element, a reflector which is molded integral with a first lead having the light emitting element mounted thereon and a second lead in electrical connection with the light emitting element, and an encapsulating resin composition in the cured state enclosing the light emitting element.
  • the reflector is molded from a heat curable resin composition and has a recess defined by a bottom wall and a side wall.
  • the resin side wall has a thickness of 50 to 500 ⁇ m.
  • the encapsulating resin composition is a heat curable resin composition having a hardness of at least 30 Shore D units in the cured state.
  • the heat curable resin composition of which the reflector is molded is a curable epoxy resin composition, silicone resin composition or silicone/epoxy hybrid resin composition.
  • the encapsulating resin composition is a curable silicone resin composition or silicone/epoxy hybrid resin composition.
  • the surface-mount light emitting device has high impact strength and exhibits satisfactory adhesion and discoloration resistance.
  • FIG. 1 is a perspective view of an exemplary matrix array of reflectors as molded.
  • FIG. 2 is a plan view of a discrete reflector obtained by dicing the matrix reflector substrate.
  • FIG. 3 is a cross-sectional view taken along lines A-A in FIG. 2 .
  • FIG. 4 is a cross-sectional view taken along lines B-B in FIG. 2 .
  • FIG. 5 schematically illustrates how to measure the breaking strength of a light emitting device.
  • the surface-mount light emitting device is defined as comprising a light emitting element, a reflector which is molded from a heat curable resin composition, and an encapsulating resin composition enclosing the light emitting element.
  • Suitable heat curable resin compositions of which the reflector is formed include epoxy resin compositions, silicone resin compositions and silicone/epoxy hybrid resin compositions.
  • the epoxy resin compositions contain an epoxy resin and a curing agent.
  • the epoxy resin include bisphenol epoxy resins, cresol novolac epoxy resins, alicyclic epoxy resins, aliphatic epoxy resins, biphenyl epoxy resins, and aralkyl epoxy resins.
  • Suitable curing agents include acid anhydrides, phenolic resins, and amine compounds.
  • an epoxy resin composition comprising a triazine derived epoxy resin, an acid anhydride, and a cure accelerator is preferred as the heat curable resin composition because of heat resistance and light resistance.
  • Suitable silicone resin compositions include heat curable silicone resin compositions of the condensation and addition reaction type.
  • condensation cure silicone resin composition is a composition comprising a silicone resin having the average compositional formula (1) and a condensation catalyst.
  • R 1 is each independently a monovalent hydrocarbon group of 1 to 20 carbon atoms
  • R 2 is each independently a monovalent hydrocarbon group of 1 to 4 carbon atoms
  • a, b and c are numbers in the range: 0.8 ⁇ a ⁇ 1.5, 0 ⁇ b ⁇ 0.3, 0.001 ⁇ c ⁇ 0.5, and 0.801 ⁇ a+b+c ⁇ 2.
  • Typical of the addition cure silicone resin composition is a composition comprising a vinyl-containing silicone resin, a hydrosilyl-containing silicone resin as curing agent, and a platinum catalyst.
  • Suitable silicone/epoxy hybrid resin compositions include heat curable silicone/epoxy hybrid resin compositions comprising a triazine derived epoxy resin, a silicone resin, acid anhydride, and cure accelerator, which are effectively curable, and have heat resistance, light resistance and satisfactory strength.
  • heat curable silicone/epoxy hybrid resin compositions comprising a triazine derived epoxy resin, a silicone resin, acid anhydride, and cure accelerator, which are effectively curable, and have heat resistance, light resistance and satisfactory strength.
  • an epoxy resin and/or a silicone resin having at least one epoxy group per molecule may be previously reacted with an acid anhydride so that the resin may have a higher degree of polymerization, prior to use.
  • the reflector is formed of a silicone resin or a silicone/epoxy hybrid resin.
  • a silicone resin or a silicone/epoxy hybrid resin If an epoxy resin or thermoplastic polyphthalamide is used in such application, the resin can be decomposed and discolored by the heat associated with emission and the light of short wavelength, resulting in a reduced light reflectivity and hence, a loss of light extraction efficiency.
  • silicone resins having better heat resistance and light resistance are most desirable.
  • those silicone resins having a high methyl content are preferred.
  • the reflector-forming heat curable resin composition is loaded with an inorganic filler.
  • inorganic fillers which are commonly loaded in resin compositions may be used.
  • Suitable inorganic fillers include silica (e.g., fused silica, fused spherical silica, crystalline silica), alumina, silicon nitride, aluminum nitride, boron nitride, glass fibers, and antimony trioxide.
  • the average particle size and shape of inorganic filler are not particularly limited, an average particle size of 4 to 40 ⁇ m is typical. It is noted that the average particle size is determined as a mass average value D 50 (or median diameter) in particle size distribution measurement by the laser diffraction method. Most often, fused silica or fused spherical silica is used.
  • the particle size of silica is not particularly limited, an average particle size of 4 to 40 ⁇ m, especially 7 to 35 ⁇ m is preferred in view of molding and flow.
  • An appropriate amount of the inorganic filler loaded is 50 to 1,200 parts, more preferably 300 to 1,000 parts by weight per 100 parts by weight of the resin.
  • thermoforming heat curable resin composition As the reflector-forming heat curable resin composition mentioned above, commercially available heat curable resin compositions may be used.
  • the reflector-forming heat curable resin composition may be further loaded with reinforcements.
  • Suitable reinforcements include amorphous fibers such as glass fibers, borosilicate glass and rock wool, polycrystalline fibers such as alumina fibers, single crystal fibers such as potassium titanate, calcium silicate, silicate glass, and aluminum borate, as well as magnesium sulfate, silicon carbide, and silicon nitride.
  • a white pigment may be added to the composition.
  • titanium dioxide is used as the white pigment.
  • Titanium dioxide may have any unit cell of rutile, anatase or brookite type, with the rutile type being preferred. Although the particle size and shape is not particularly limited, titanium dioxide typically has an average particle size of 0.05 to 5.0 ⁇ m. Titanium dioxide may be previously surface treated with hydrous aluminum or silicon oxide for rendering it more compatible with or dispersible in the resin and inorganic filler.
  • suitable white pigments include potassium titanate, zirconium oxide, zinc sulfide, zinc oxide, and magnesium oxide, which may be used alone or in combination with titanium dioxide.
  • An appropriate amount of the white pigment loaded is 10 to 500 parts, more preferably 50 to 300 parts by weight per 100 parts by weight of the resin.
  • the inorganic filler may be previously surface treated with coupling agents such as silane coupling agents and titanate coupling agents for the purpose of enhancing the bond strength between the resin and the inorganic filler.
  • Suitable coupling agents include epoxy-functional alkoxysilanes such as ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and ⁇ -(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino-functional alkoxysilanes such as N- ⁇ -(aminoethyl)- ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, and N-phenyl- ⁇ -aminopropyltrimethoxysilane; and mercapto-functional alkoxysilanes such as ⁇ -mercaptopropyltrimethoxysilane.
  • the reflector-forming heat curable resin composition may be further loaded with various additives.
  • Suitable additives which can be used herein include various powdered silicones, thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, fatty acid esters, glycerides, and internal parting agents such as zinc stearate and calcium stearate. These additives may be incorporated as long as the objects of the invention are not compromised.
  • the heat curable resin composition defined herein cures into a product which has an initial light reflectivity of preferably at least 80%, more preferably at least 90% over a wavelength of 350 to 800 nm.
  • the method which is most commonly used in molding the heat curable resin composition into a reflector is low-pressure transfer molding or compression molding. Molding of the resin composition is typically performed at 130 to 185° C. for 30 to 180 seconds. Post-cure may be at 150 to 185° C. for 1 to 8 hours.
  • a metal leadframe 10 included a first lead (or die pad) 11 for mounting a light emitting element 2 and a second lead 12 in electrical connection with the light emitting element 2 (i.e., a lead providing connection between a light emitting element electrode and an external electrode).
  • the heat curable resin composition is fed into the space between the first and second leads 11 and 12 of the leadframe 10 to form a reflector 1 defining a recess having a bottom wall through which the surface of the first lead 11 and a distal surface portion of the second lead 12 are exposed.
  • the reflector molded from the heat curable resin composition is illustrated in FIG. 1 as a substrate which is molded such that multiple, typically 100 to 300 recesses (each serving as the reflector) are arrayed in matrix on a metal leadframe.
  • a light emitting element 2 may be bonded to the first lead or die pad 11 in the recess of each reflector by applying a silicone die bonding agent and heating at 150° C. for 1 hour, for example. Then a gold wire 3 is used to provide electric connection between the light emitting element 2 and the second lead 12 .
  • the structure is encapsulated. Specifically, an encapsulating resin composition 4 is cast into the reflector recess by such technique as potting, and cured by heating at 120° C. for 1 hour and then at 150° C. for 2 hours.
  • the encapsulating resin composition 4 used herein may be a transparent silicone resin composition, silicone/epoxy hybrid resin composition or a silicone resin composition having a phosphor or the like incorporated therein. Encapsulation with the encapsulating resin composition of this type may be performed by the potting technique. Alternatively, a lens shape may be simultaneously formed using such encapsulating techniques as transfer molding and compression molding.
  • the substrate having a matrix array of reflectors is divided into discrete reflectors by such a technique as dicing, laser sawing or water-jet cutting.
  • the reflector is molded from a heat curable resin composition integral with a first lead having the light emitting element mounted thereon and a second lead in electrical connection with the light emitting element.
  • the reflector has a recess defined by a bottom wall and a side wall.
  • the thickness of the resin side wall of the recess must be reduced.
  • the resin side wall of the reflector recess typically has a thickness of 50 to 500 ⁇ m. If the recess side wall has a thickness of less than 50 ⁇ m, such a thin wall is fragile on handling. If the recess side wall has a thickness in excess of 500 ⁇ m, the number of reflectors per unit area is reduced, leading to a cost increase. More desirably, the reflector resin side wall has a thickness of 100 to 300 ⁇ m.
  • a heat curable resin composition is used as the encapsulating resin composition for the encapsulation of a light emitting element, typically high brightness LED.
  • the heat curable resin composition for encapsulation may be a silicone resin composition or a silicone/epoxy hybrid resin composition.
  • the silicone resin composition featuring elongation is preferred.
  • the heat curable silicone resin compositions are generally based on various silicone resins such as dimethylsilicone and methylphenylsilicone resins. Depending on the resin structure, some compositions are so soft that their cured hardness can be measured on the Shore A scale, and some other compositions are so hard that their cured hardness can be measured on the Shore D scale.
  • the cure type may be either addition cure or organic peroxide cure type. For a particular cure type selected, any of well-known curing agents may be used.
  • the encapsulating resin composition cures into a cured product having heat resistance, weather resistance, light resistance and transparency.
  • one or more ingredients selected from fillers, glass fibers, diffusing agents, pigments, and phosphors capable of absorbing light from the LED and wavelength conversion may be incorporated.
  • the encapsulating resin composition used herein is a heat curable resin composition which cures into a product having a hardness of at least 30 Shore D units, preferably 30 to 70 Shore D units, and more preferably 30 to 60 Shore D units.
  • the encapsulating resin composition for the encapsulation of a light emitting device using a reflector made of a thermoplastic resin a composition having a cured hardness of less than 30 Shore D units is used in order to maintain crack resistance and reliability (in terms of wire opening or the like).
  • the encapsulating resin for the protection of a light emitting element must have a hardness of at least 30 Shore D units.
  • a light emitting device encapsulated with a resin having a hardness of less than 30 Shore D units is prone to break by external impacts.
  • the heat curable resin composition specifically silicone resin composition used herein may be selected from commercially available compositions. From many commercial products, a composition giving a cured part having a Shore D hardness in the range is selected and used.
  • the surface-mount light emitting device of the invention is improved in heat resistance and light resistance because the reflector is made of a heat curable resin, typically silicone resin.
  • the device of the invention can accommodate a high brightness LED and is free of degradation on conduction of high current flow.
  • the device finds use as luminaires, displays, LC display backlight units, and the like.
  • the reflector made of a heat curable resin which is tightly bonded to the leadframe has little impact on wires as compared with the reflector of a thermoplastic resin. Even on use of resins having a hardness which is unacceptable in the prior art, no problems arise with respect to reliability.
  • a 1-L flask was charged with 100 parts by weight of methyltrichlorosilane and 200 parts by weight of toluene and ice cooled.
  • a mixture of 8 parts by weight of water and 60 parts by weight of isopropyl alcohol was added dropwise to the silane solution over 5 to 20 hours while maintaining a flask internal temperature of ⁇ 5° C. to 0° C.
  • the resulting reaction solution was heated and stirred at the reflux temperature for 20 minutes.
  • the reaction solution was then cooled to room temperature, whereupon 12 parts by weight of water was added dropwise over 30 minutes at a temperature below 30° C., followed by 20 minutes of stirring. 25 parts by weight of water was added dropwise to the reaction mixture, which was stirred at 40-45° C. for 60 minutes.
  • the siloxane had a chlorine content of 0.13 mol/100 g and a kinematic viscosity of 25 mm 2 /s at 25° C.
  • a white silicone resin composition was prepared by combining 80 parts by weight of the heat curable silicone resin of Synthesis Example 1, 20 parts by weight of the silicone resin of Synthesis Example 2, 160 parts by weight of rutile titanium oxide R-45M (Sakai Chemical Industry Co., Ltd., average particle size 0.29 ⁇ m), 540 parts by weight of fused spherical silica MSR-4500TN (Tatsumori, Ltd., average particle size 45 ⁇ m), 1 part by weight of a catalyst, and 1 part by weight of calcium stearate as parting agent, uniformly mixing, and kneading on a hot two-roll mill.
  • a copper leadframe having silver plated on its overall surface was prepared.
  • the silicone resin composition was transfer molded on the leadframe under the following conditions, forming a matrix array of recess reflectors (1) as shown in FIG. 1 .
  • a white silicone resin composition was prepared by combining 37 parts by weight of the heat curable silicone resin of Synthesis Example 1, 28 parts by weight of a triazine derived epoxy resin (tris(2,3-epoxypropyl)-isocyanurate, TEPIC-S by Nissan Chemical Industries, Ltd., epoxy equivalent 100), 35 parts by weight of an acid anhydride (carbon-carbon double bond-free acid anhydride, methylhexahydrophthalic anhydride, Rikacid® MH, New Japan Chemical Co., Ltd.), 160 parts by weight of rutile titanium oxide R-45M (Sakai Chemical Industry Co., Ltd., average particle size 0.29 ⁇ m), 540 parts by weight of fused spherical silica MSR-4500TH (Tatsumori, Ltd., average particle size 45 ⁇ m), 1 part by weight of a catalyst, and 1 part by weight of calcium stearate as parting agent, uniformly mixing, and kneading on a hot two-roll mill.
  • a copper leadframe having silver plated on its overall surface was prepared.
  • the silicone resin composition was transfer molded on the leadframe under the following conditions, forming a matrix array of recessed reflectors (2) as shown in FIG. 1 .
  • Each reflector of the thus molded reflector matrix array had a recess with a bottom where the leadframe was exposed.
  • a blue LED chip was bonded to one lead of the leadframe with a silicone die bonding agent (LPS632D by Shin-Etsu Chemical Co., Ltd.).
  • a gold wire was bonded to provide electrical connection between the LED chip electrode and the other lead.
  • each of encapsulating silicone resin compositions having a different cured hardness as shown in Table 1 was cast into the recess where the LED chip was mounted, and cured at 120° C. for 1 hour and then at 150° C. for 1 hour, completing encapsulation.
  • the reflector matrix array was singularized into discrete reflectors.
  • the dicing conditions were adjusted such that the side wall of a discrete reflector might have a thickness of 100 ⁇ m, 200 ⁇ m or 300 ⁇ m.
  • An attempt to cut such that the reflector side wall might have a thickness of 40 ⁇ m failed because such a thin wall was prone to crack on the side surface.
  • a similar light emitting device was fabricated using a reflector made of prior art polyphthalamide (PPA) and having a side wall thickness of 100 ⁇ m.
  • PPA polyphthalamide
  • a light emitting device 20 (fabricated in Examples and Comparative Examples) at its bottom was bonded to a support 22 with an adhesive 21 . Breaking strength was measured by applying a pressure to the side surface of the reflector at a compression rate of 100 ⁇ m/sec via a push-pull gauge. The results are shown in Table 2.
  • Discrete light-emitting devices of Examples 1 to 7 and Comparative Examples 1 to 3 were held in an atmosphere of 25° C. and RH80% for 48 hours and moved three passes through a reflow oven at 260° C. The adhesion between the encapsulating resin and the reflector surface or the chip surface was examined. The reflector surface was also observed for discoloration after reflow.
  • the reflow and heat shock tests used 10 specimens in each Example, and the result is a failure rate per 10 specimens.
  • the failure mode of the reflow test is peeling at the Ag plating surface.
  • the failure mode of the heat shock test is wire opening.

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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CN102903834B (zh) 2016-12-07
MY164773A (en) 2018-01-30
KR101959568B1 (ko) 2019-03-18
JP2013030648A (ja) 2013-02-07
TWI535064B (zh) 2016-05-21
KR20130014401A (ko) 2013-02-07
EP2551928B1 (fr) 2018-08-22
JP5682497B2 (ja) 2015-03-11
CN102903834A (zh) 2013-01-30
EP2551928A2 (fr) 2013-01-30
US20130312906A1 (en) 2013-11-28
US8846420B2 (en) 2014-09-30
TW201318226A (zh) 2013-05-01

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