US20120006675A1 - Film forming method, film forming apparatus and control unit for the film forming apparatus - Google Patents

Film forming method, film forming apparatus and control unit for the film forming apparatus Download PDF

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Publication number
US20120006675A1
US20120006675A1 US13/213,533 US201113213533A US2012006675A1 US 20120006675 A1 US20120006675 A1 US 20120006675A1 US 201113213533 A US201113213533 A US 201113213533A US 2012006675 A1 US2012006675 A1 US 2012006675A1
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United States
Prior art keywords
power
target
holder
substrate
shielding member
Prior art date
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Abandoned
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US13/213,533
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English (en)
Inventor
Shunsuke Yamamoto
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Canon Anelva Corp
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Canon Anelva Corp
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Assigned to CANON ANELVA CORPORATION reassignment CANON ANELVA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAMOTO, SHUNSUKE
Publication of US20120006675A1 publication Critical patent/US20120006675A1/en
Priority to US14/527,948 priority Critical patent/US9428828B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Definitions

  • the present invention relates to a film forming method and a film forming apparatus (for example, sputtering apparatus) employed for depositing material on a substrate in the step of manufacturing a semiconductor device and a magnetic storage medium, and a control unit for the film forming apparatus.
  • a film forming apparatus for example, sputtering apparatus
  • the practice for producing the thin film using sputtering phenomenon and processing the thin film for application to the device has been widely implemented in the industry.
  • the sputtering phenomenon is caused by making high energy ion incident onto the target from which sputter particles (neutral particles) are generated, so that the sputter particles are deposited on the substrate.
  • the sputtering film forming apparatus is provided with a shield called shutter capable of opening and closing between the target and the substrate.
  • the shutter is used to control the timing for starting the film formation so as not to start the film forming process until stabilization of the plasma state within the vacuum vessel. Specifically, the shutter is kept closed until stabilization of the plasma generated upon application of high voltage to the target so that no film is formed on the substrate. Upon stabilization of the plasma, the shutter is opened to start the film formation. Controlling start of the film formation using the shutter makes it possible to conduct well controlled film formation on the substrate with stabilized plasma, resulting in the film with high quality.
  • Patent Document 1 discloses the high frequency sputtering apparatus and method capable of forming the thin film with excellent reproducibility with respect to the film quality and film thickness by opening the shutter disposed between the substrate and the target upon stabilization of self bias while detecting the self bias voltage induced in the target.
  • Patent Document 2 discloses the sputtering apparatus having the sputter cathode provided with a tubular cathode cover which surrounds the side of the sputter surface, and the shutter that can be opened and closed provided in the open end portion of the cathode cover.
  • the sputtering apparatus disclosed in Patent Document 2 is capable of reducing turnaround of the sputter particles upon discharge in the state where the shutter is closed before starting the film formation such as the target cleaning.
  • the sputtering film forming apparatus and method disclosed in Patent Document 1 allow formation of the thin film with excellent reproducibility with respect to film quality and film thickness by opening the shutter disposed between the substrate and the target at a time point when the self bias is stabilized.
  • reduction of the particle onto the substrate is not disclosed in the document.
  • the film forming apparatus disclosed in Patent Document 2 has also improved the turnaround of the sputter particles when the shutter is closed.
  • the problem relevant to the particle onto the substrate resulting from formation of the film when the shutter is opened is not described. Influence of the particle on production of the semiconductor device and the magnetic storage medium adapted for recent miniaturization and thin-film formation has increased, and accordingly, suppression of the particle has been increasingly demanded.
  • a first aspect of the present invention is a film forming method for forming a film on a substrate by sputtering a target, the method comprising: a first step of applying a first power to a target holder holding the target to cause discharge in a first discharge space, the first power being lower than a film forming power applied upon film formation from a power source connected to the target holder; a second step of changing the location of discharging from the first discharge space to a second discharge space larger than the first discharge space while continuing the discharge caused in the first step; a third step of applying a second power higher than the first power to the target holder from the power source in the second discharge space; and a fourth step of exposing the substrate, which is shielded against the second discharge space, to the second discharge space.
  • a second aspect of the present invention is a film forming apparatus comprising: a target holder for holding a target; a power applying means for applying a power to the target holder; a substrate holder for holding a substrate; a shield which is grounded, has a hollow portion formed so as to surround the target holder, and has an opening formed for causing the hollow portion to communicate with outside the shield; a first shielding member configured to be movable between a first position that shields between the target holder and the substrate holder by covering the opening and a second position that does not shield between the target holder and the substrate holder; a second shielding member configured to be movable between a third position that shields between the target holder and the substrate holder by covering at least a substrate holding surface of the substrate holder and a fourth position that does not shield between the target holder and the substrate holder; and a control means for controlling the power applying means and movement of the first and second shielding members, wherein the control means controls the power applying means so as to apply a first power lower
  • a third aspect of the present invention is a control unit for controlling a film forming apparatus provided with a target holder for holding a target, a power applying means for applying a power to the target holder, a substrate holder for holding a substrate, a shield which is grounded, has a hollow portion formed so as to surround the target holder, and has an opening for causing the hollow portion to communicate with outside the shield; a first shielding member configured to be movable between a first position that shields between the target holder and the substrate holder by covering the opening and a second position that does not shield between the target holder and the substrate holder; and a second shielding member configured to be movable between a third position that shields between the target holder and the substrate holder by covering at least a substrate holding surface of the substrate holder and a fourth position that does not shield between the target holder and the substrate holder, the control unit comprising: a means for controlling the power applying means so as to apply a first power lower than a film forming power applied to the target
  • the present invention makes it possible to realize reduction of the particle onto the substrate upon film formation.
  • FIG. 1 schematically illustrates a sputtering apparatus according to an embodiment of the present invention.
  • FIG. 2 is a flow of a film forming method according to an embodiment of the present invention.
  • FIG. 3 is a chart representing each state of components resulting from application of the film forming method according to an embodiment of the present invention.
  • FIG. 1 schematically illustrates the sputtering apparatus 1 according to an embodiment of the present invention.
  • the sputter film forming apparatus 1 includes a vacuum chamber 2 provided with a gate valve 42 and capable of vacuum exhaust, an exhaust chamber 8 which is provided adjacent to the vacuum chamber 2 via an exhaust port, and an exhaust unit for exhausting the inside of the vacuum chamber 2 via the exhaust chamber 8 .
  • the exhaust unit includes a turbo-molecular pump 48 connected to the exhaust chamber 8 via a main valve 47 .
  • the turbo-molecular pump 48 of the exhaust unit is further connected to a dry pump 49 .
  • the exhaust unit is provided below the exhaust chamber 8 in order to minimize the footprint (occupied area) of the apparatus as a whole.
  • a target holder 6 is provided within the vacuum chamber 2 for holding a target 4 via a back plate 5 . Adjacent to the target holder 6 , a target shutter 14 with an opening is provided so as to cover the target holder 6 .
  • the target shutter 14 formed of a conductive metal, for example, Al and SUS, is grounded.
  • the target shutter 14 has a rotary shutter structure.
  • the target shutter 14 functions as a shielding member that changes a state between a closed state (shielded state) for shielding between a substrate holder 7 and the target holder 6 , and an open state (retracted state) for not shielding between the substrate holder 7 and the target holder 6 .
  • the target shutter 14 When the target shutter 14 is located at a first position that shields between the target holder 6 and the substrate holder 7 , the target shutter 14 is in the closed state.
  • an opening of a chimney 9 (an opening for connecting the hollow portion of the chimney 9 with outside the chimney 9 ) is covered with the target shutter 14 , so that the target holder 6 is shielded against the substrate holder 7 .
  • the target shutter 14 when the target shutter 14 is located at a second position that does not shield between the target holder 6 and the substrate holder 7 , it is in the open state.
  • the opening of the target shutter 14 is positioned between the target 4 placed on the target holder 6 and a substrate 10 mounted on the substrate holder 7 to bring the target shutter 14 into the open state.
  • the target shutter 14 is provided with a target shutter drive mechanism 33 for opening and closing the target shutter 14 .
  • the chimney 9 as a tubular shield is provided around the target holder 6 in the space between the target holder 6 and the target shutter 14 so as to surround periphery of the target holder 6 .
  • a magnetron discharge space to the front of the sputter surface of the target 4 attached to the target holder 6 is surrounded with the chimney 9 , and open to the opening of the target shutter 14 in the open state of the shutter.
  • the target shutter 14 is configured to be rotatable.
  • the target shutter 14 may be arbitrarily configured so long as it is movable between the first and the second positions so as to establish its closed state and the open state.
  • the target shutter 14 may be configured to be slidable and may be moved between the first and second positions by sliding.
  • the magnetron discharge space to the front of the sputter surface of the target 4 attached to the target holder 6 is surrounded with the chimney 9 and the gas introducing mechanism is further provided toward the magnetron discharge space, gas is introduced while bringing the target shutter 14 into the closed state so as to immediately raise the pressure to the front surface of the target. This makes it possible to quickly start discharging under the low pressure, thus providing the effect for improving throughput.
  • the sputter apparatus of off-set arrangement in the present embodiment intended to obtain good distribution in spite of a very thin film allows use of a plurality of targets so as to be switchable.
  • the target shutter 14 and the chimney 9 are used for the purpose of preventing or suppressing cross contamination of the plurality of targets. That is, the target shutter 14 in this case serves to shield the other target holder from the discharge space (space where the plasma discharge occurs) between the target holder 6 and the substrate holder 7 in the open state.
  • the chimney 9 is formed of the conductive material, for example, Al, and grounded.
  • the chimney 9 has concavo-convex portions formed on its surface facing the target through blast process and thermal spray from the aspect of retaining the adhered sputter particles. It is more preferable to coat the surface of the chimney 9 , which faces the target with at least the insulating material, for example, alumina and yttria through thermal spray.
  • the surface of the chimney 9 as the member for surrounding the target 4 which faces the target 4 is coated through at least alumina thermal spray, so that the surface potential of the chimney 9 becomes close to the plasma potential compared to the case where it is not coated through alumina thermal spray.
  • the surface of the chimney 9 which faces the target is coated with at least the insulating film (for example, insulating film formed through alumina thermal spray) so as to allow the surface potential of the chimney 9 to be close to the potential of plasma generated in the magnetron discharge space in the structure capable of forming the magnetron discharge space in the hollow portion of the chimney 9 .
  • This may suppress bombardment by the charged particles in plasma, thus further reducing the particles.
  • the surface of the chimney 9 which faces the target, is coated through at least the alumina thermal spray to suppress abnormal discharge generated between the chimney 9 and the target 4 , thus further reducing the particles.
  • a film forming method for forming a film on a substrate by sputtering a target includes a first step of causing discharge in a first discharge space by applying a first power to a target holder for holding the target, the first power being lower than a film forming power applied upon film formation by a power source connected to the target holder, a second step of changing the location of discharging from the first discharge space to a second discharge space larger than the first discharge space while continuing the discharge caused in the first step, a third step of applying a second power higher than the first power to the target holder from the power source in the second discharge space, and a fourth step of exposing the substrate shielded against the second discharge space to the second discharge space.
  • the effect of the particle reduction may not be limited to the case by the aforementioned method.
  • the particle reduction effect may be obtained when the surface of the chimney 9 , which faces the target 4 , is coated through at least the insulating film thermal spray in the structure capable of forming the magnetron discharge space in the hollow portion of the chimney 9 .
  • the above-described method may further be combined with the power application method according to the embodiment so as to obtain more remarkable effects.
  • a magnet 13 for realizing magnetron sputtering is provided to the rear of the target 4 when seen from the sputter surface.
  • the magnet 13 held by a magnet holder 3 is rotatable by a not shown magnet holder rotating mechanism. During discharge, the magnet 13 is rotated for making erosion of the target uniform.
  • the target 4 is provided at a position (offset position) obliquely upward with respect to the substrate 10 . In other words, the center point of the sputter surface of the target 4 deviates from the normal of the center point of the substrate 10 by a predetermined dimension.
  • the target holder 6 is connected to a power source 12 for applying power for sputter discharge.
  • the T/S distance of the embodiment is set to 240 mm.
  • RF power source is used as the power source, a not shown matching box is provided between the power source 12 and the target holder 6 .
  • the target holder 6 is insulated by an insulator 34 from the vacuum chamber 2 at the ground potential. It is formed of a metal such as Cu which serves as the electrode upon application of power.
  • the target holder 6 is provided with a not shown water path inside so as to be cooled by cooling water supplied from a not shown water pipe arrangement.
  • the target 4 contains the material component intended to be used for forming a film on the substrate 10 .
  • the back plate 5 provided between the target 4 and the target holder 6 is formed of a metal such as Cu, and supports the target 4 .
  • a substrate holder 7 for mounting the substrate 10 thereon, and a substrate shutter 19 provided between the substrate holder 7 and the target holder 6 are provided within the vacuum chamber 2 .
  • the substrate shutter 19 is supported by a substrate shutter support mechanism 20 which is connected to a substrate shutter drive mechanism for driving the substrate shutter 19 to be opened and closed.
  • the substrate shutter 19 provided adjacent to the substrate holder 7 serves as a shielding member for switching a state between a closed state for shielding between the substrate holder 7 and the target holder 6 and an open state for not shielding between the substrate holder 7 and the target holder 6 . That is, when the substrate shutter 19 is located at a third position that shields between the target holder 6 and the substrate holder 7 , the substrate shutter 19 is in the closed state.
  • the substrate shutter 19 When the substrate shutter 19 is located at the third position, it covers at least the substrate holding surface on which the substrate of the substrate holder 9 is held. The substrate 10 is shielded against the side of the target shutter 14 (for example, second discharge space to be described later). Meanwhile, when the substrate shutter 19 is located at a fourth position that does not shield between the target holder 6 and the substrate holder 7 , it is in the open state.
  • the substrate shutter is configured to be rotatable.
  • the substrate shutter 19 may be arbitrarily configured so long as it is movable between the third and fourth positions so as to establish its closed/open states.
  • the substrate shutter 19 may be configured to be slidable and may be moved between the third and fourth positions by sliding.
  • the inner surface of the vacuum chamber 2 is grounded.
  • a grounded chamber shield 40 is provided on the inner surface of the vacuum chamber 2 between the target shutter 14 and the substrate holder 7 .
  • the chamber shield is formed separately from the vacuum chamber 2 for preventing direct adhesion of sputter particles discharged from the target 4 onto the inner surface of the vacuum chamber 2 , and for protecting the inner surface of the vacuum chamber.
  • the chamber shield may be periodically replaced and cleaned for reuse.
  • the chamber shield 40 is positioned to surround at least the space between the opening of the target shutter 14 and the position which can be shielded by the substrate shutter 19 .
  • the grounded chamber shield 40 is capable of acting as a ground electrode to the target 4 and the target holder 6 to which the high frequency power is applied. Further preferably, the chamber shield 40 is positioned to surround the space between the opening of the target shutter 14 and the substrate holder 7 from the aspect of stability of plasma.
  • a ring-like shielding member (hereinafter referred to as “substrate peripheral cover ring 21 ”) is provided on the surface of the substrate holder 7 at outer edge side (outer circumference) of the portion on which the substrate 10 is mounted.
  • the substrate peripheral cover ring 21 prevents or suppresses adhesion of the sputter particles to the portion of the substrate 10 mounted on the substrate holder 7 other than the film forming surface.
  • the portion other than the film forming surface includes the side surface and back surface of the substrate 10 in addition to the surface of the substrate holder 7 covered by the substrate peripheral cover ring 21 .
  • the substrate holder 7 is provided with a substrate holder drive mechanism 31 for moving the substrate holder 7 up and down and rotating it at a predetermined speed.
  • the substrate holder drive mechanism 31 is capable of moving the substrate holder 7 up and down.
  • the vacuum chamber 2 is provided with a first gas inlet 15 for introducing inert gas into the vacuum chamber 2 , a second gas inlet 17 for introducing reactive gas, and a pressure gauge 41 for measuring pressure of the vacuum chamber 2 .
  • the first gas inlet 15 is connected to piping for introducing the inert gas (for example, argon, krypton, xenon, neon), a mass flow controller for controlling flow rate of the inert gas, and valves for switching on/off state of flow of the inert gas, and configured to introduce the gas at the flow rate designated by a not shown control unit into the vacuum chamber 2 stably.
  • the first gas inlet 15 may be connected to a decompression valve, filter and the like when needed.
  • the first gas inlet 15 is positioned adjacent to the target 4 .
  • the first gas inlet 15 is configured to introduce the inert gas into the magnetron discharge space to the front surface of the target 4 .
  • the second gas inlet 17 is connected to piping for introducing reactive gas (for example, nitrogen, oxygen), the mass flow controller for controlling the flow rate of the reactive gas, and valves for switching on/off state of flow of the reactive gas, and configured to introduce the gas at the flow rate designated by a not shown control unit into the vacuum chamber 2 stably.
  • the second gas inlet 17 may be connected to a decompression valve, filter and the like when needed.
  • the second gas inlet 17 is positioned adjacent to the substrate 10 .
  • the sputter film forming apparatus 1 is provided with a controller con as a control means for controlling the drive mechanisms 32 , 33 for the shutters 14 , 19 and the power source 12 so as to open/close the shutters 14 , 19 at a predetermined timing to increase/decrease the power.
  • the controller con of the sputter film forming apparatus 1 includes a storage unit 81 for storing the program of the method according to the embodiment as shown in FIG. 2 , for example, and an arithmetic processing unit 82 for executing the arithmetic processing of the process control.
  • the controller con is capable of executing the method according to the embodiment in accordance with the program shown in FIG. 2 .
  • the arithmetic processing unit 82 may be formed of a personal computer (PC), PLC, and microcomputer, for example.
  • FIG. 2 represents an exemplary flow of the film forming method according to the embodiment.
  • FIG. 3 represents the respective states of components (timing chart) when applying the method. Referring to FIGS. 2 and 3 , the film forming method according to the embodiment using the apparatus as shown in FIG. 1 will be described.
  • the target shutter 14 (which may be referred to as “first shutter”) is in the closed state. That is, the target shutter 14 is located at the first position. So if the target shutter 14 is in the open state, the controller con controls the target shutter drive mechanism 33 to rotate the target shutter 14 into the closed state so as to shield between the target holder 6 and the substrate holder 7 .
  • the target holder 6 is surrounded with the chimney 9 , so that the space defined by the target shutter 14 , the chimney 9 and the target 4 in the closed state serves as the first discharge space.
  • the first discharge space is made smaller than the discharge space upon subsequent film formation (second discharge space to be described later) to promote discharging at ignition.
  • the substrate shutter 19 (which may be also referred to as “second shutter”) is also closed. That is, the substrate shutter 19 is located at the third position. While the substrate shutter 19 is in the open state, the controller con controls the substrate shutter drive mechanism 32 to rotate the substrate shutter 19 into the closed state so as to shield between the target holder 6 and the substrate holder 7 .
  • first step S 1 the controller con controls the power source 12 to apply a first power (electric power) to the target holder 6 for holding the target 4 .
  • Application of the first power causes discharge in the first discharge space.
  • the power (first power) applied in first step S 31 may be lower than the film forming power so long as the discharge is stably started.
  • second step S 2 the controller con controls the target shutter drive mechanism 33 to open the first shutter (target shutter 14 ) capable of switching open/closed state between the target 4 and the substrate 10 while continuing the discharge with power applied in first step S 1 . That is, the target shutter drive mechanism 33 rotates the first shutter so as to move the first shutter from the first position to the second position.
  • Second step S 2 changes the location of discharging from the first discharge space to the second discharge space larger than the first discharge space.
  • step S 3 the controller con controls the power source 12 to increase the power applied to the target holder 6 from the first power to a second power higher than the first power. It is preferable to increase the power applied in third step S 3 (second power) to a film forming power for stable film formation on the next substrate.
  • step S 4 the controller con controls the substrate shutter drive mechanism to open the second shutter (substrate shutter 19 ) which can be opened/closed at the position closer to the substrate 10 than to the first shutter (target shutter 14 ) for starting the film formation on the substrate 10 .
  • the substrate shutter drive mechanism 32 rotates the second shutter so as to move the second shutter from the third position to the fourth position for exposing the substrate holder 7 (that is, the substrate 10 ) to the side of the target holder 6 (substrate shutter 19 is brought into the open state).
  • the substrate holder 7 is thus brought into the open state to expose the substrate holder (that is, substrate 10 ) to the second discharge space. This allows the sputter particles to reach the substrate 10 on which the film is formed.
  • the first shutter target shutter 14
  • gas is introduced into the discharge space (first discharge space) to start discharging through application of high frequency power to the target holder 6 .
  • the plasma is confined by the target 4 , the chimney 9 and the target shutter 14 .
  • the chimney 9 and the target shutter 14 serve as the ground electrodes.
  • the chimney 9 may be considered to be grounded, which does not have to be completely grounded at high frequency.
  • the area of the surface of the target 4 facing the plasma via the sheath is set as high frequency applied electrode area.
  • the grounded electrode area is set as the total area of the inner wall surface of the chimney 9 and the surface of the target shutter 14 facing the target at a maximum. In this way, if the grounded electrode area is relatively small to the high frequency applied electrode area, the unignorable voltage may be applied not only to the target 4 but also to the chimney 9 and the target shutter 14 . The voltage in this case is caused by the potential difference between the plasma potential and the electrode.
  • the grounded electrode area becomes larger relative to the high frequency applied electrode area, the potential difference between the plasma potential and the ground electrode becomes smaller. Meanwhile, if the grounded electrode area becomes close to the high frequency applied electrode area, the voltage that is substantially the same voltage applied to the high frequency applied electrode (target 4 in this case) may be also applied to the ground electrode. If the target shutter 14 is opened (the target shutter 14 is brought into the open state), the plasma is diffused in the region between the target shutter and the chamber shield 40 . While the high frequency applied electrode area is kept constant, the grounded electrode area in view of plasma largely changes depending on the state where the target shutter 14 is closed (closed state), and the state where it is opened (open state).
  • the relationship of “high frequency applied electrode area/grounded electrode area” becomes “closed target shutter 14 (closed state)>opened target shutter 14 (open state)”. Increase in the grounded electrode area relative to the high frequency applied electrode area is effective for decreasing the voltage to the ground electrode.
  • ion in the plasma is made incident onto the inner surface of the chimney 9 in accordance with the potential difference between the chimney 9 and the plasma. If the potential difference is large, ions incident onto the inner surface of the chimney 9 sputter the surface of the chimney 9 and the surface of the target shutter 14 facing the target to generate particles.
  • the relatively small first discharge space is formed.
  • the ground electrode becomes the chimney 9 and the target shutter 14 for comporting the first discharge space. Accordingly, the grounded electrode area becomes relatively small to the high frequency applied electrode area.
  • the potential difference between the chimney 9 as the ground electrode and the plasma generated in the first discharge space may be made small. This makes it possible to reduce particle generation owing to ion bombardment against the surface of the chimney 9 and the surface of the target shutter 14 facing the target.
  • the ground electrode includes the chimney 9 , the target shutter 14 and the chamber shield 40 .
  • the high frequency applied electrode area is not changed.
  • the discharge space becomes the second discharge space larger than the first discharge space, thus making the grounded electrode area large. This makes it possible to reduce the potential difference between the plasma potential and the ground electrode potential. This may further prevent incidence of the ion with the energy which may cause problem on the inner surface of the chimney 9 and the surface of the chamber shield 40 .
  • the embodiment describes the sputter apparatus with offset arrangement.
  • Such condition is not necessarily required for obtaining the effect of the present invention.
  • the effect of the present invention may be obtained when establishing the conditions where at least two shielding members (for example, shutters) are needed, and at least one of the shielding members is provided adjacent to the target, and at least one of the other shielding members is provided adjacent to the substrate.
  • the distance between the shielding member near the target and the shielding member near the substrate, or the distance between the shielding member near the target and the substrate mounted on the substrate holder becomes large. As the ground area largely changes when opening the shielding member near the target, great effect may be obtained.
  • the shield for example, chimney
  • the shielding member for example, shutter
  • the configuration of the shield is not limited to the one described in the embodiment so long as the function is ensured. That is, the shield such as the chimney may be an arbitrary member so long as it surrounds the target holder, which includes a hollow portion and an opening for causing the hollow portion to communicate with the outside, and is allowed to be grounded. The opening is selectively shielded by the shielding member such as the target shutter.
  • the applied power when changing the target shutter 14 from the closed state to the open state is an essential factor because the smaller the applied power becomes, the more the particles may be suppressed. It is thought to be related to the change in the plasma state which becomes large as the applied power is large when changing the state of the target shutter 14 in the closed state to the open state.
  • the horizontal axis represents time
  • the vertical axis represents the open/closed state of the first shutter, open/closed state of the second shutter, and the applied power state from the power source 12 to the target holder 6 .
  • the first power for example, 100 W
  • second power which allows stable start of discharge
  • first step S 1 the first power (for example, 100 W) lower than the film forming power (second power), which allows stable start of discharge
  • first step S 2 the first shutter is opened (second step S 2 ).
  • the first power applied at the time T 2 has to be lower than the second power as the film forming power, which allows stable start of discharge for the purpose of suppressing particles.
  • the applied power is increased to the second power from the time T 3 to T 4 (third step S 3 ).
  • the second power is set as the film forming power (for example, 800 W) used in the film forming step.
  • the second shutter is opened to start the film forming step (fourth step S 4 ).
  • the applied power is increased in third step S 3 (from time T 3 to T 4 ) stepwise or continuously at low rates.
  • the stepwise or continuous increase in the power at low rates allows reduction in the load to the power source 12 , and further allows the matching box to stably perform matching. Impedance of the plasma is different between the low power and high power. So the matching box needs to have different parameters, respectively.
  • the parameters may be adjusted generally by automatically changing the variable capacitor capacity by way of hardware. When the power is largely changed, the change of the variable capacitor capacity is also increased, which may cause the time lag until the optimum value, thus making the plasma unstable.
  • the period required for the increase at low rates may be arbitrarily set so long as it is in the range allowed by the product throughput, and the performance of the matching box is allowed to follow up.
  • the first power may be arbitrarily set so long as it is low enough to allow stable start of discharge, and not to largely increase the potential difference. If the aforementioned requirements are satisfied, the first power may be stepwise or continuously increased or decreased in the period from the time T 1 to T 2 in FIG. 3 .
  • Example 2 The apparatus shown in FIG. 1 was employed to perform RF sputtering using Al 2 O 3 as the target, and the chimney (tubular shield) 9 having the surface facing the target and coated through alumina thermal spray. Argon was used as the inert gas which is introduced from the first gas inlet 15 .
  • the RF power (second power) for forming the film on the substrate 10 was set to 800 W.
  • the power for starting power application (first power) was set to 100 W. After applying the power of 100 W (first power) (first step S 1 ), the first shutter was opened (second step S 2 ). After opening the first shutter, the applied power was increased to 800 W (second power) upon formation of the substrate (third step S 3 ).
  • the second shutter was opened, and film formation on the substrate was started (fourth step S 4 ).
  • the number of particles on the substrate having the film formed thereon counted 19 , indicating reduction of the number of particles relative to the comparative example to be described later.
  • RF sputtering was performed using Al 2 O 3 as the target, and the chimney (tubular shield) 9 having the surface facing the target and coated through alumina thermal spray.
  • Argon was used as the inert gas likewise the aforementioned example.
  • the RF power for forming the film on the substrate 10 was set to 800 W. After setting the RF power to 800 W, and applying the power, the first shutter was opened, and then the second shutter was opened to form the film. The number of particles on the substrate having the film formed thereon counted 496 .
  • the controller con as the control unit for the sputter film forming apparatus 1 may be built in the sputter film forming apparatus 1 , or provided separately from the sputter film forming apparatus 1 .
  • the controller con and the sputter film forming apparatus 1 may be locally connected through LAN, or connected with wire or wirelessly connected via WAN connection such as the Internet, so that the controller con is configured to be communicated with the sputter film forming apparatus 1 .
  • the processing method configured to store the program for operating the structure of the embodiment to realize the functions as described above in the storage medium, read the program stored in the storage medium as codes, and execute the operations by the computer is also included in the scope of the above embodiment.
  • the computer readable data storage medium is also within the range of the example.
  • the storage medium for storing the computer program and the computer program itself may be included in the range of the example.
  • FloppyTM disk hard disk, optical disk, magnetic optical disk, CD-ROM, magnetic tape, nonvolatile memory card, and ROM may be employed as the data storage medium.
  • the other one which is operated on OS in association with the other software and add-in board function may be included in the category of the aforementioned embodiment.

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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100043894A1 (en) * 2008-07-30 2010-02-25 Tokyo Electron Limited Valve element, particle entry preventive mechanism, exhaust control apparatus, and substrate processing apparatus
US20140001031A1 (en) * 2011-03-01 2014-01-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device for producing nanoparticles at high efficiency, use of said device and method of depositing nanoparticles
US20140054167A1 (en) * 2011-06-30 2014-02-27 Canon Anelva Corporation Film-forming apparatus
US20170074774A1 (en) * 2015-09-11 2017-03-16 Kabushiki Kaisha Toshiba Particle measuring apparatus and particle measuring method
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US20200312636A1 (en) * 2019-03-26 2020-10-01 Tokyo Electron Limited Substrate processing apparatus and charge neutralization method for mounting table
US20210040605A1 (en) * 2018-04-28 2021-02-11 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering method
US11842890B2 (en) * 2019-08-16 2023-12-12 Applied Materials, Inc. Methods and apparatus for physical vapor deposition (PVD) dielectric deposition

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102141130B1 (ko) * 2013-08-29 2020-08-04 가부시키가이샤 알박 반응성 스퍼터 장치
JP6163064B2 (ja) * 2013-09-18 2017-07-12 東京エレクトロン株式会社 成膜装置及び成膜方法
SG11201700850QA (en) * 2014-08-08 2017-03-30 Canon Anelva Corp Sputtering apparatus and processing apparatus
JP6299575B2 (ja) * 2014-12-05 2018-03-28 信越化学工業株式会社 スパッタリング装置及びスパッタリング方法
US9960023B2 (en) * 2014-12-31 2018-05-01 Applied Materials, Inc. Methods and apparatus for nodule control in a titanium-tungsten target
WO2019216003A1 (ja) * 2018-05-11 2019-11-14 株式会社アルバック スパッタリング方法
CN110344013A (zh) * 2019-08-19 2019-10-18 北京北方华创微电子装备有限公司 溅射方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892650A (en) * 1972-12-29 1975-07-01 Ibm Chemical sputtering purification process
US4121537A (en) * 1976-03-19 1978-10-24 Hitachi, Ltd. Apparatus for vacuum deposition
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US6863785B2 (en) * 2001-02-07 2005-03-08 Asahi Glass Company, Limited Sputtering apparatus and sputter film deposition method
US7033461B2 (en) * 2001-11-02 2006-04-25 Ulvac, Inc. Thin film forming apparatus and method
US20060191876A1 (en) * 2005-02-03 2006-08-31 Applied Materials, Inc. Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
US20060249372A1 (en) * 2005-04-11 2006-11-09 Intematix Corporation Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries
US7247345B2 (en) * 2002-03-25 2007-07-24 Ulvac, Inc. Optical film thickness controlling method and apparatus, dielectric multilayer film and manufacturing apparatus thereof
US20090211897A1 (en) * 2008-02-21 2009-08-27 Canon Anelva Corporation Sputtering apparatus and method for controlling the same
US20100224482A1 (en) * 2008-11-28 2010-09-09 Canon Anelva Corporation Deposition apparatus and electronic device manufacturing method
US20100326818A1 (en) * 2009-03-30 2010-12-30 Canon Anelva Corporation Method of manufacturing semiconductor device and sputtering apparatus
US8147664B2 (en) * 2008-11-28 2012-04-03 Canon Anelva Corporation Sputtering apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4410407A (en) * 1981-12-22 1983-10-18 Raytheon Company Sputtering apparatus and methods
JPH0676658B2 (ja) * 1984-06-30 1994-09-28 株式会社島津製作所 スパツタリング装置
JPS63230863A (ja) * 1987-03-20 1988-09-27 Hitachi Ltd スパツタ装置のシヤツタ機構
JPS63290271A (ja) * 1987-05-20 1988-11-28 Seiko Epson Corp スパッタ装置のタ−ゲット部シャッタ
GB2208390B (en) 1987-08-06 1991-03-27 Plessey Co Plc Thin film deposition process
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
JPH02173258A (ja) * 1988-12-24 1990-07-04 Nippon Telegr & Teleph Corp <Ntt> 薄膜の作製方法および作製装置
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
US5174875A (en) * 1990-08-29 1992-12-29 Materials Research Corporation Method of enhancing the performance of a magnetron sputtering target
JPH07116602B2 (ja) 1990-11-07 1995-12-13 日電アネルバ株式会社 高周波スパッタリング装置および膜作製方法
JPH0748668A (ja) * 1993-08-05 1995-02-21 Hitachi Ltd スパッタリング装置
JPH08104975A (ja) * 1994-10-04 1996-04-23 Sony Corp スパッタ装置およびそのクリーニング方法
JP3789507B2 (ja) 1995-03-30 2006-06-28 株式会社アルバック スパッタリング装置
JP2003183824A (ja) * 2001-12-12 2003-07-03 Matsushita Electric Ind Co Ltd スパッタ方法
CN101395732A (zh) * 2006-03-03 2009-03-25 佳能安内华股份有限公司 磁阻效应元件的制造方法以及制造设备
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
JP4855360B2 (ja) * 2007-09-13 2012-01-18 株式会社アルバック 成膜装置及び成膜方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892650A (en) * 1972-12-29 1975-07-01 Ibm Chemical sputtering purification process
US4121537A (en) * 1976-03-19 1978-10-24 Hitachi, Ltd. Apparatus for vacuum deposition
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US6863785B2 (en) * 2001-02-07 2005-03-08 Asahi Glass Company, Limited Sputtering apparatus and sputter film deposition method
US7033461B2 (en) * 2001-11-02 2006-04-25 Ulvac, Inc. Thin film forming apparatus and method
US7247345B2 (en) * 2002-03-25 2007-07-24 Ulvac, Inc. Optical film thickness controlling method and apparatus, dielectric multilayer film and manufacturing apparatus thereof
US20060191876A1 (en) * 2005-02-03 2006-08-31 Applied Materials, Inc. Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
US20060249372A1 (en) * 2005-04-11 2006-11-09 Intematix Corporation Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries
US20090211897A1 (en) * 2008-02-21 2009-08-27 Canon Anelva Corporation Sputtering apparatus and method for controlling the same
US20100224482A1 (en) * 2008-11-28 2010-09-09 Canon Anelva Corporation Deposition apparatus and electronic device manufacturing method
US8147664B2 (en) * 2008-11-28 2012-04-03 Canon Anelva Corporation Sputtering apparatus
US20100326818A1 (en) * 2009-03-30 2010-12-30 Canon Anelva Corporation Method of manufacturing semiconductor device and sputtering apparatus

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100043894A1 (en) * 2008-07-30 2010-02-25 Tokyo Electron Limited Valve element, particle entry preventive mechanism, exhaust control apparatus, and substrate processing apparatus
US20140001031A1 (en) * 2011-03-01 2014-01-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device for producing nanoparticles at high efficiency, use of said device and method of depositing nanoparticles
US20140054167A1 (en) * 2011-06-30 2014-02-27 Canon Anelva Corporation Film-forming apparatus
US9322094B2 (en) * 2011-06-30 2016-04-26 Canon Anelva Corporation Film-forming apparatus
US20170074774A1 (en) * 2015-09-11 2017-03-16 Kabushiki Kaisha Toshiba Particle measuring apparatus and particle measuring method
US9885649B2 (en) * 2015-09-11 2018-02-06 Toshiba Memory Corporation Particle measuring apparatus and particle measuring method
US20210040605A1 (en) * 2018-04-28 2021-02-11 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering method
US11710624B2 (en) * 2018-04-28 2023-07-25 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering method
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US20200312636A1 (en) * 2019-03-26 2020-10-01 Tokyo Electron Limited Substrate processing apparatus and charge neutralization method for mounting table
US11862439B2 (en) * 2019-03-26 2024-01-02 Tokyo Electron Limited Substrate processing apparatus and charge neutralization method for mounting table
US11842890B2 (en) * 2019-08-16 2023-12-12 Applied Materials, Inc. Methods and apparatus for physical vapor deposition (PVD) dielectric deposition

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JP5513529B2 (ja) 2014-06-04
JPWO2011093334A1 (ja) 2013-06-06
WO2011093334A1 (ja) 2011-08-04
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US20150053547A1 (en) 2015-02-26

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