US20110186336A1 - Substrate for mounting element and process for its production - Google Patents

Substrate for mounting element and process for its production Download PDF

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Publication number
US20110186336A1
US20110186336A1 US12/955,488 US95548810A US2011186336A1 US 20110186336 A1 US20110186336 A1 US 20110186336A1 US 95548810 A US95548810 A US 95548810A US 2011186336 A1 US2011186336 A1 US 2011186336A1
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Prior art keywords
substrate
conductor layer
ceramics
thick conductor
mounting element
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US12/955,488
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English (en)
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Katsuyoshi Nakayama
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AGC Inc
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Asahi Glass Co Ltd
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Priority claimed from JP2010203104A external-priority patent/JP5464107B2/ja
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Assigned to ASAHI GLASS COMPANY, LIMITED reassignment ASAHI GLASS COMPANY, LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAYAMA, KATSUYOSHI
Publication of US20110186336A1 publication Critical patent/US20110186336A1/en
Assigned to ASAHI GLASS COMPANY, LIMITED reassignment ASAHI GLASS COMPANY, LIMITED CORPORATE ADDRESS CHANGE Assignors: ASAHI GLASS COMPANY, LIMITED
Priority to US14/219,583 priority Critical patent/US9504166B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C7/00—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts
    • B24C7/0007—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H05K1/113—Via provided in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09472—Recessed pad for surface mounting; Recessed electrode of component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • the present invention relates to a substrate for mounting element and a process for its production, particularly to a substrate for mounting element excellent in sulfurization resistance, wherein planarity of a surface of a thick conductor layer formed on the substrate surface is good, and a process for producing such a substrate.
  • a light-emitting device employing a LED element has been used for backlights of mobile phones or liquid crystal TVs or liquid crystal displays, generic illumination, etc. Accordingly, peripheral components of a LED element are also required to have higher performance.
  • a substrate to mount a LED element one made of a resin material is used.
  • a resin substrate is likely to be deteriorated by a heat or light accompanying higher brightness of a LED element. Accordingly, a study has been made to use a substrate made of e.g. an inorganic insulating material.
  • Such an inorganic insulating material may, for example, be a ceramics such as alumina or aluminum nitride, or a low temperature co-fired ceramics (LTCC) which is a composite of glass with a ceramics powder such as alumina.
  • LTCC is one fired usually at a temperature of from about 800 to 1,000° C. which is lower than the firing temperature for usual ceramics and is prepared by laminating a prescribed number of green sheets made of glass and a ceramics powder (such as an alumina powder or a zirconia powder), integrating them by hot pressing, followed by firing.
  • An inorganic insulating substrate made of such inorganic insulating materials has a higher durability against a heat or light as compared with a resin substrate and thus is prospective as a substrate for mounting a LED element.
  • a thick conductor layer which is prepared by printing a paste composed mainly of a conductor metal such as silver (Ag) or copper (Cu), followed by firing. And, among such thick conductor layers, particularly terminal portions (electrodes) to be connected to the element are subjected to lamination plating (Ni/Au plating) of nickel (Ni) plating and gold (Au) plating to maintain the wire bonding property, the adhesion strength and the weather resistance.
  • lamination plating Ni/Au plating
  • Ni/Au plating nickel (Ni) plating and gold (Au) plating to maintain the wire bonding property, the adhesion strength and the weather resistance.
  • sulfurization resistance is imparted to prevent a color change by a reaction of the thick conductor layer with a sulfur (S) content in the air, etc.
  • a substrate to mount a LED element or the like is required to have sulfurization resistance, and with conventional plated thicknesses (Ni-plated thickness of from 3 to 5 ⁇ m/Au-plated thickness of from 0.1 to 0.3 ⁇ m) required for the wiring bonding portions, there has been a problem that a color change to black is observed at the Ni/Au-plated portion in a sulfurization test in accordance with JIS-C-60068-2-43, thus failing to pass the sulfurization test.
  • a method of applying a protective coat by e.g. a silicone resin on the Ni-plated layer, a method of forming a thick Au layer by paste printing instead of plating, or a method of increasing the thickness of the Au-plated layer has been known.
  • a method has been known wherein the particle size of the Ag powder to be used as a conductor to constitute the thick conductor layer is made small to improve the sintering property thereby to reduce grain boundaries.
  • the method of forming a thick Au layer or increasing the thickness of the Au-plated layer has had a problem that the production cost increases substantially. Further, in the case of the LTCC substrate, there has been a problem such that if the sintering property is improved by reducing the particle size of the Ag powder, timing in shrinkage by firing will not meet with the substrate whereby the substrate is likely to undergo warpage.
  • Patent Document 1 does not disclose the conditions for the wet blast treatment in detail, the blast treatment to remove glass is one to break and remove glass as a hard substance in a short time by blasting. Under blast treatment conditions for such a purpose, it has been difficult to fill spaces among the conductor (Ag) particles. And, it has been difficult to remove the surface irregularities of the thick conductor (Ag) layer thereby to planarize (smooth) the layer surface to such an extent to make it possible to completely cover it with the Au-plated layer having a usual thickness.
  • Patent Document 1 Japanese Patent No. 4,089,902
  • the present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a substrate for mounting element having sulfurization resistance improved by increasing the planarity of the surface of a thick conductor layer formed on an inorganic insulating substrate.
  • the substrate for mounting element of the present invention comprises an inorganic insulating substrate made of an inorganic insulating material, a thick conductor layer formed on the inorganic insulating substrate and made of a metal composed mainly of silver (Ag) or copper (Cu), and an electroconductive metal-plated layer formed on the thick conductor layer, wherein the thick conductor layer has its surface planarized by wet blast treatment and has a surface roughness Ra of at most 0.02 ⁇ m.
  • the inorganic insulating substrate may be a low temperature co-fired ceramics (LTCC) substrate. Otherwise, the inorganic insulating substrate may be a ceramics substrate. And, the ceramics substrate may contain alumina or aluminum nitride as the main component. Further, the electroconductive metal-plated layer is preferably a nickel (Ni)/gold (Au)-plated layer.
  • the process for producing a substrate for mounting element of the present invention comprises a step of forming a thick conductor layer-provided substrate having a thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu), on a surface of an inorganic insulating substrate made of an inorganic insulating material, a step of applying wet blast treatment to the thick conductor layer to planarize the surface of the thick conductor layer to a surface roughness Ra of at most 0.02 ⁇ m, and a step of forming a nickel (Ni)/gold (Au)-plated layer on the thick conductor layer having the surface planarized by the wet blast treatment.
  • the above step of forming a thick conductor layer-provided substrate may comprise a step of printing a metal paste composed mainly of silver (Ag) or copper (Cu) on a surface of a substrate made of a glass ceramics composition comprising a glass powder and a ceramics powder, to form a conductor pattern, and a step of firing the substrate having the conductor pattern formed to sinter the glass ceramics composition and fire the metal paste thereby to form the thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu).
  • the above step of forming a thick conductor layer-provided substrate may comprise a step of firing a ceramics composition comprising a ceramics powder and a sintering aid to obtain a ceramics substrate, a step of printing a metal paste composed mainly of silver (Ag) or copper (Cu) on a surface of the ceramics substrate to form a conductor pattern, and a step of re-firing the ceramics substrate having the conductor pattern formed to form, from the metal paste, the thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu).
  • an abrasive to be used for the wet blast treatment is a ceramics powder having a particle size of from 25 to 150 ⁇ m, and a medium is water. Further, the mixing ratio of the abrasive is preferably from 20 to 60 vol % based on the total amount of the abrasive and the water. Further, in the above wet blast treatment, it is preferred that a blast liquid comprising the abrasive and the water is jetted from a jet orifice of 8 mm in diameter, of a nozzle made of boron carbide, and the pressure is from 1.2 to 1.8 kg/cm 2 .
  • the surface roughness Ra is one represented by JIS B0601 (1994), 3 “Definition and Representation of Defined Arithmetic Mean Roughness”.
  • the surface roughness Ra was measured by SURFCOM 1400D (name of machine, manufactured by Tokyo Seimitsu Co., Ltd.).
  • the thick conductor layer made of a metal such as silver (Ag) or copper (Cu) formed on the surface of the inorganic insulating substrate is planarized (smoothed) by the wet blast treatment, and spaces among the thick conductor (Ag) particles are filled and the surface roughness Ra is adjusted to be at most 0.02 ⁇ m, whereby the plating property is good, and the thick conductor surface can be completely covered even by a Au-plated layer having a usual thickness.
  • a substrate for mounting element which is excellent in sulfurization resistance.
  • FIG. 1 is a cross-sectional view illustrating an example of the substrate for mounting element of the present invention.
  • FIG. 2 is a cross-sectional view illustrating another example of the substrate for mounting element of the present invention.
  • FIG. 3 is a cross-sectional view illustrating a third example of the substrate for mounting element of the present invention.
  • FIG. 4 is a cross-sectional view illustrating a fourth example of the substrate for mounting element of the present invention.
  • FIGS. 1 and 2 are, respectively, cross-sectional views illustrating the substrate 10 for mounting element of the present invention.
  • the substrate 10 for mounting element has an inorganic insulating substrate 1 made of an inorganic insulating material, and one main surface (the upper surface in Figs.) is a mounting surface 1 a on which an element (a semiconductor element) such as a LED element is to be mounted.
  • an element a semiconductor element
  • the inorganic insulating substrate 1 may be a low temperature co-fired ceramics substrate (LTCC substrate) made of a sintered product of a glass ceramics composition comprising a glass powder and a ceramics powder, or a ceramics substrate made of a sintered product composed mainly of alumina or aluminum nitride.
  • LTCC substrate low temperature co-fired ceramics substrate
  • the shape, thickness, size, etc. of the inorganic insulating substrate 1 are not particularly limited.
  • the inorganic insulating substrate 1 may be one having a flat-form as shown in FIG. 1 , or one having such a shape that a side wall 1 b is provided along the periphery of the substrate to form a mounting surface 1 a in a cavity, as shown in FIG. 2 .
  • the raw material composition of the inorganic insulating material to constitute the inorganic insulating substrate 1 , the firing conditions, etc. will be described in the production process given hereinafter.
  • a thick conductor layer 2 being a connection terminal (electrode) to be electrically connected to an element such as a LED element, is formed.
  • the thick conductor layer 2 is made of a conductor metal composed mainly of silver (Ag) or copper (Cu) and is formed by printing a conductor metal paste by e.g. screen printing, followed by firing, as described hereinafter.
  • the thick conductor layer 2 is formed on the same plane as the mounting surface 1 a .
  • a concave 1 c may be formed on the mounting surface 1 a
  • the thick conductor layer 2 may be formed on the bottom surface in the concave 1 c.
  • Such a thick conductor 2 has its surface planarized or smoothed (hereinafter referred to as planarization) by wet blast treatment and has a surface roughness Ra of at most 0.02 ⁇ m. Further, on such a thick conductor layer 2 having the surface planarized, a Ni/Au-plated layer 3 is formed to have a laminated structure comprising a nickel (Ni)-plated layer and a gold (Au)-plated layer formed thereon, and the surface of the thick conductor layer 2 is thereby completely covered without a space.
  • planarization surface planarized or smoothed
  • the surface roughness Ra of the thick conductor layer 2 exceeds 0.02 ⁇ m, it tends to be difficult to completely cover the surface of the thick conductor layer 2 by the Ni/Au-plated layer 3 , and the sulfurization resistance tends to be inadequate.
  • the surface roughness Ra of the thick conductor layer 3 is more preferably at most 0.01 ⁇ m.
  • a thick conductor layer 2 may be formed as an external connection terminal (electrode).
  • the surface of the thick conductor layer 2 formed on the non-mounting surface 1 d is preferably planarized by wet blast treatment in the same manner as the thick conductor layer 2 formed on the mounting surface 1 a .
  • the thick conductor layer 2 formed on the non-mounting surface 1 d is preferably planarized by wet blast treatment to have a surface roughness Ra of at most 0.02 ⁇ m, and has such a structure that a Ni/Au-plated layer 3 is formed thereon to completely cover the surface of the thick conductor layer 2 without a space.
  • symbol 4 represents a via conductor which electrically connects an element connection terminal on the mounting surface 1 a and an external connection terminal on the non-mounting surface 1 d.
  • the thick conductor layer 2 made of a metal such as silver (Ag) or copper (Cu) formed on the surface of the inorganic insulating substrate 1 , is planarized by wet blast treatment to a surface roughness Ra of at most 0.02 ⁇ m, and the Ni/Au-plated layer 3 is formed thereon to completely cover the surface of the thick conductor layer 2 without a space, whereby no color change will take place in the sulfurization test, and the sulfurization resistance is excellent.
  • the substrate 1 for mounting element having a LTCC substrate can be produced as follows.
  • a glass ceramics green sheet is formed.
  • This green sheet is formed by adding a binder and, as the case requires, a plasticizer, a solvent, etc. to a glass ceramics composition comprising a glass powder and a ceramics powder (hereinafter referred to as a ceramics powder for LTCC) to prepare a slurry, and forming the slurry into a sheet by e.g. a doctor blade method, followed by drying.
  • a ceramics powder for LTCC a glass ceramics powder for LTCC
  • the glass powder is not necessarily limited, but one having a glass transition point (Tg) of at least 550° C. and at most 700° C., is preferred. If the glass transition point (Tg) is lower than 550° C., the after-mentioned binder burn out is likely to be difficult, and if it exceeds 700° C., the shrinkage-initiating temperature tends to be high, and the dimensional precision is likely to deteriorate.
  • Tg glass transition point
  • the glass powder for example, a glass powder comprising from 57 to 65 mol % of SiO 2 , from 13 to 18 mol % of B 2 O 3 , from 9 to 23 mol % of CaO, from 3 to 8 mol % of Al 2 O 3 , and from 0.5 to 6 mol % in total of at least one selected from K 2 O and Na 2 O, is used.
  • the 50% particle size (D 50 ) of the glass powder is preferably from 0.5 ⁇ m to 2 ⁇ m. If D 50 of the glass powder is less than 0.5 ⁇ m, the glass powder is likely to cohere, and not only the handling tends to be difficult, but also it tends to be difficult to uniformly disperse it.
  • the particle size is a value obtained by a particle size analyzer of a laser diffraction scattering method.
  • a laser diffraction particle size analyzer (tradename: SALD2100 manufactured by Shimadzu Corporation) was used.
  • the ceramics powder for LTCC one which has been commonly used for the production of a LTCC substrate, can be used.
  • an alumina powder, a zirconia powder, or a mixture of an alumina powder and a zirconia powder may, for example, be suitably used.
  • D 50 of the ceramics powder is preferably at least 0.5 ⁇ m and at most 4 ⁇ m.
  • Such a glass powder and a ceramics powder are blended and mixed, for example, so that the glass powder would be from 30 mass % to 50 mass %, and the ceramics powder would be from 50 mass % to 70 mass % to obtain a glass ceramics composition.
  • a binder and, if required, a plasticizer, a solvent, etc. are added to obtain a slurry.
  • binder it is possible to suitably use, for example, a polyvinyl butyral or an acrylic resin.
  • plasticizer it is possible to use, for example, dibutyl phthalate, dioctyl phthalate or butylbenzyl phthalate.
  • solvent it is possible to employ an aromatic or alcohol-type organic solvent such as toluene, xylene or butanol. Further, a dispersing agent or a leveling agent may also be used.
  • the glass ceramics green sheet thus formed is cut into a prescribed size by using a punch cutting die or a punching machine, and at the same time, via holes for interlayer connection are formed by punching at prescribed positions.
  • a conductor metal paste is printed by a method such as screen printing to form a non-fired conductor pattern. Further, a conductor metal paste is filled in the above-mentioned via holes for interlayer connection, to form a non-fired interlayer connection portion.
  • the conductor metal paste may, for example, be one prepared by adding a vehicle such as ethylcellulose and, as the case requires, a solvent, etc. to a metal powder composed mainly of e.g. silver (Ag) or copper (Cu) to form a paste.
  • a silver (Ag) powder, a mixed powder of silver and palladium, or a mixed powder of silver and platinum is, for example, preferably used.
  • the adhesive strength between the conductor metal and the substrate can be sufficiently secured by the glass component contained in the glass ceramics green sheet, and it is preferred to use a metal paste having no glass frit incorporated, in order not to increase the electrical resistance (resistance value) of the conductor metal.
  • a plurality of green sheets having non-fired conductor patterns formed are overlaid one on another while adjusting their positions and integrated by heating and pressing, followed by heating at a temperature of from 500° C. to 600° C. to carry out binder burn out by decomposing and removing a binder such as a resin contained in the glass ceramics green sheet. Thereafter, heating is carried out further at a temperature of from about 800 to 1,000° C. to fire the glass ceramics composition constituting the glass ceramics green sheet.
  • the metal paste formed inside and on the surfaces (the front and rear surfaces) of the glass ceramics substrate is simultaneously fired to form a thick conductor layer made of a metal composed mainly of silver (Au) or copper (Cu).
  • the thick conductor layer formed on the surface of the LTCC substrate is subjected to wet blast treatment. That is, a blast liquid prepared by mixing an abrasive (blast material) with a liquid medium (such as water) is blasted (blown) to the thick conductor layer under high pressure. By this wet blast treatment, spaces among the conductor particles are filled so that the surface of the thick conductor layer is planarized.
  • the blast force (pressure) of the blast liquid, the treating time, etc. the surface roughness (Ra) of the thick conductor layer after the treatment can be adjusted to be at most 0.02 ⁇ m.
  • a ceramic powder such as alumina or zirconia may, for example, be used.
  • a pulverized powder of an alumina powder it is preferred to use.
  • the particle size of the abrasive is preferably within a range of from 25 to 150 ⁇ m. If the particle size of the abrasive is less than 25 ⁇ m, the abrasive is likely to enter into e.g. a groove for cutting of the LTCC substrate and constitute a foreign matter which is likely to impair the mounting of an element.
  • the 50% particle size (D 50 ) of the abrasive is preferably within a range of from 80 to 100 ⁇ m. More preferred D 50 is 90 ⁇ m.
  • the mixing ratio of the abrasive (blast material) and the liquid medium (such as water) is such that the abrasive will be from 20 to 60 vol % based on the entire amount of the blast liquid. If the mixing ratio of the abrasive is less than 20 vol %, the wet blasting efficiency is likely to be remarkably low and it becomes difficult to sufficiently planarize the surface of the thick conductor layer. On the other hand, if the ratio of the abrasive exceeds 60 vol %, the viscosity of the blast liquid tends to be too high, whereby the blasting efficiency rather tends to deteriorate.
  • the most preferred mixing ratio is such that the abrasive is 40 vol % and the water is 60 vol %.
  • the flow rate (blast force) for jetting the blast liquid mixed in such a ratio is preferably from 1.2 to 1.8 kg/cm 2 . If the blast force of the blast liquid is less than 1.2 kg/cm 2 , the effect may be observed for the removal of glass exposed on the surface of the thick conductor layer, but it becomes difficult to carry out sufficient planarization so that the surface roughness Ra of the thick conductor layer becomes at most 0.02 ⁇ m. Accordingly, it becomes difficult to impart good sulfurization resistance. If the blast force of the blast liquid exceeds 1.8 kg/cm 2 , an alumina powder being a blast material is likely to deposit on the surface of the thick conductor layer, whereby the effect for planarizing the surface tends to be small.
  • the wet blasting step it is possible to adopt a method of jetting the blast liquid from a jet orifice disposed at about 5 cm above the transporting surface, towards the thick conductor layer of the LTCC substrate which is continuously transported by a belt conveyor.
  • the transporting rate of the conveyor is preferably adjusted to be from 1 to 1.5 m/min. If the transporting rate is less than 1 m/min, an alumina powder being the blast material is likely to deposit on the thick conductor layer, whereby the effect to planarize the surface tends to be small. If the transporting rate exceeds 1.5 m/min, the blasting effect tends to be small, and it becomes difficult to carry out sufficient planarization for preventing sulfurization.
  • Ni plating is carried out and then Au plating is carried out to form a Ni/Au-plated layer.
  • the Ni-plated layer is formed in a thickness of from 5 to 10 ⁇ m, for example, by electrolytic plating using a nickel sulfamic acid bath.
  • the gold-plated layer can be formed in a thickness of from 0.2 to 0.5 ⁇ m, for example, by electrolytic plating using a gold potassium cyanide bath.
  • the thick conductor layer as the underlayer was subjected to wet blast treatment to fill spaces among the conductor (e.g. Ag) particles thereby to smooth the irregularities and the surface is planarized to a surface roughness Ra of at most 0.02 ⁇ m, and accordingly, the thick conductor layer can be completely covered by the Ni/Au-plated layer having the above thickness.
  • the Ni-plated layer is not exposed, and the sulfurization resistance is excellent, and in the sulfurization test in accordance with JIS C-60068-2-43, it is possible to obtain a Au-plated film free from a black-colored defect due to precipitation of nickel sulfide on the surface of the Au-plated film.
  • a ceramics green sheet is formed.
  • This green sheet can be formed by adding a binder and, as the case requires, a plasticizer, a solvent, etc. to a ceramics composition comprising a ceramic powder and a sintering aid to prepare a slurry, forming the slurry into a sheet by e.g. a doctor blade method, followed by drying.
  • the 50% particle size (D 50 ) of the ceramics powder is preferably from 0.5 ⁇ m to 2 ⁇ m. If D 50 of the ceramics powder is less than 0.5 ⁇ m, the ceramics powder is likely to cohere, and not only the handling tends to be difficult, but also it becomes difficult to uniformly disperse it. On the other hand, if D 50 exceeds 2 ⁇ m, sintering deficiency is likely to occur.
  • the sintering aid one which has been commonly used for the production of a ceramics substrate, may be used.
  • a mixture of SiO 2 and an alkaline earth metal oxide, or a rare earth element oxide may be suitably used.
  • D 50 of the sintering aid is preferably from 0.5 ⁇ m to 4 ⁇ m.
  • Such a ceramics powder and a sintering aid are blended and mixed, for example, so that the ceramics powder would be from 80 mass % to 99 mass %, and the sintering aid would be from 1 mass % to 20 mass %, to obtain a ceramics composition, and to such a ceramics composition, a binder and, as the case requires, a plasticizer, a solvent, etc. are added to obtain a slurry.
  • binder it is possible to suitably use, for example, a polyvinyl butyral or an acrylic resin.
  • plasticizer it is possible to use, for example, dibutyl phthalate, dioctyl phthalate or butylbenzyl phthalate.
  • solvent it is possible to use an aromatic or alcohol-type organic solvent such as toluene, xylene or butanol. Further, a dispersing agent or a leveling agent may also be used.
  • the ceramics green sheet thus formed is cut into a prescribed size by a punch cutting die or a punching machine, and at the same time, via holes for interlayer connection may be formed by punching at prescribed positions.
  • the non-fired ceramics green sheet is heated at a temperature of from 500° C. to 600° C., to carry out binder burn out by decomposing and removing a binder such as a resin contained in the green sheet.
  • a binder such as a resin contained in the green sheet.
  • laminating non-fired ceramics green sheets a plurality of them are overlaid one on another while adjusting their positions and integrated by heating and pressing, and then, the above-mentioned binder burn out is carried out. Thereafter, heating is further carried out at a temperature of from 1,100 to 2,200° C. to fire the ceramics composition constituting the ceramics green sheet to obtain a ceramics substrate.
  • a conductor metal paste is printed by a method such as screen printing to form a non-fired conductor pattern. Further, a conductor metal paste is filled in the above-mentioned via holes for interlayer connection to form non-fired interlayer connection portions.
  • a conductor paste one prepared by adding a vehicle such as ethylcellulose and, as the case requires, a solvent, etc. to a metal powder composed mainly of e.g. silver (Ag) or copper (Cu) to form a paste, is used.
  • a silver (Ag) powder, a mixed powder of silver and palladium, or a mixed powder of silver and platinum may, for example, be preferably used.
  • a metal paste having a small amount of glass flit incorporated may be used.
  • the ceramics substrate having the metal paste printed thereon is heated at a temperature of from 500 to 1,000° C. to fire the metal paste formed inside (in via holes) and on the surfaces (the front and rear surfaces) of the ceramics substrate thereby to form a thick conductor layer made of a metal composed mainly of silver (Ag) or copper (Cu).
  • the thick conductor layer formed on the surface of the ceramics substrate is subjected to wet blast treatment. That is, a blast liquid prepared by mixing an abrasive (blast material) with a liquid medium (such as water) is blasted (blown) to the thick conductor layer under high pressure. By this wet blast treatment, spaces among the conductor particles are filled to planarize (smooth) the surface of the thick conductor layer. By adjusting the particle size of the abrasive, the blast force (pressure) of the blast liquid, the treating time, etc., the surface roughness Ra of the thick conductor layer after the treatment can be adjusted to be at most 0.02 ⁇ m.
  • Ni plating is carried out and then Au plating is carried out to form a Ni/Au-plated layer.
  • the Ni-plated layer is formed in a thickness of from 5 to 10 ⁇ m, for example, by electrolytic plating using a nickel sulfamic acid bath.
  • the gold-plated layer can be formed in a thickness of from 0.2 to 0.5 ⁇ m, for example, by electrolytic plating using a gold potassium cyanide bath.
  • the thick conductor layer as the underlayer was subjected to wet blast treatment to fill spaces among the conductor (e.g. Ag) particles thereby to smooth the irregularities and the surface is planarized to a surface roughness Ra of at most 0.02 ⁇ m, and accordingly, the thick conductor layer can be completely covered by the Ni/Au-plated layer having the above thickness.
  • the Ni-plated layer is not exposed, and the sulfurization resistance is excellent, and in the sulfurization test in accordance with JIS C-60068-2-43, it is possible to obtain a Au-plated film free from a black-colored defect due to precipitation of nickel sulfide on the surface of the Au-plated film.
  • a glass ceramics green sheet for main body to prepare the substrate 10 for mounting element was prepared.
  • raw materials were blended and mixed so that SiO 2 became 60.4 mol %, B 2 O 3 15.6 mol %, Al 2 O 3 6 mol %, CaO 15 mol %, K 2 O 1 mol % and Na 2 O 2 mol %, and this raw material mixture was put into a platinum crucible and melted at 1,600° C. for 60 minutes. Then, this molten state glass was cast and cooled. This glass was ground by a ball mill made of alumina for 40 hours to obtain a glass powder for substrate main body. Here, ethyl alcohol was used as the solvent at the time of grinding.
  • this glass powder for main body and 60 mass % of an alumina powder (tradename: AL-45H manufactured by Showa Denko K. K.) were blended and mixed to prepare a glass ceramics composition.
  • an organic solvent a mixture of toluene, xylene, 2-propanol and 2-butanol in a mass ratio 4:2:2:1
  • a plasticizer di-2-ethylhexyl phthalate
  • 5 g of polyvinyl butyral (tradename: PVK#3000K manufactured by DENKI KAGAKU KOGYO KABUSHIKI KAISHA) as a binder and a dispersing agent (tradename: BYK180 manufactured by BYK Japan KK) were blended and mixed to prepare a slurry.
  • This slurry was applied on a PET film by a doctor blade method and dried to prepare a green ceramics sheet for main body which would have a thickness of 0.15 mm after firing.
  • a conductive powder (tradename: S400-2 manufactured by Daiken Chemical Co., Ltd.) and ethylcellulose as a vehicle were blended in a mass ratio of 90:10 and dispersed in ⁇ -terpineol as a solvent so that the solid content would be 87 mass %. Then, kneading was carried out in a porcelain mortar for 1 hour, and further, dispersion was carried out three times by a three roll mill to prepare a metal paste.
  • Through-holes having a diameter of 0.3 mm were formed in the green ceramics green sheet for main body at portions corresponding to via conductors by means of a punching machine and filled with the above metal paste by a screen printing method to form non-fired via conductor paste layers, and at the same time, a non-fired thick conductor layer was formed, to obtain a glass ceramics green sheet for main body provided with a thick conductor layer.
  • the thick conductor layer corresponding to symbol 2 was subjected to wet blasting under the following conditions.
  • the mixing ratio of the abrasive (blast material) and the liquid medium (water) was such that the abrasive was 40 vol % based on the entire blast liquid. Further, by adjusting the flow rate (blast force) for jetting the blast liquid mixed in such a ratio to be 1.5 kg/cm 2 , the blast liquid was jetted from a jet orifice disposed at 5 cm above the transporting surface, towards the thick conductor layer which was transported continuously by a belt conveyor. The surface roughness Ra of the thick conductor layer was thereby made to be 0.01 ⁇ m. Here, the transporting rate of the belt conveyor was adjusted to 1.2 m/min.
  • a Ni-plated film having a thickness of 7 ⁇ m was formed by electrolytic plating using a nickel sulfate bath, and on its surface, a Au-plated film having a thickness of 0.3 ⁇ m was formed by electrolytic plating using a gold potassium cyanide bath.
  • the substrate 10 for mounting element thus obtained was subjected to exposure for 100 hours by a sulfurization test in accordance with JIS C-60068-2-43, whereby a black-colored defect due to precipitation of nickel-sulfide did not form on the surface of the Au-plated film.
  • a ceramics green sheet for main body to prepare the substrate 10 for mounting element is prepared.
  • 96 mass % of an alumina powder (tradename: AL-45H manufactured by Showa Denko K. K.) and 4 mass % of a sintering aid (a talc powder containing 65.8 mass % of SiO 2 and 34.2 mass % of MgO) were blended and mixed to prepare a ceramics composition.
  • AL-45H manufactured by Showa Denko K. K.
  • a sintering aid a talc powder containing 65.8 mass % of SiO 2 and 34.2 mass % of MgO
  • this ceramics composition 15 g of an organic solvent (a mixture of toluene, xylene, 2-propanol and 2-butanol in a mass ratio of 4:2:2:1), 2.5 g of a plasticizer (di-2-ethylhexyl phthalate), 5 g of polyvinyl butyral (tradename: PVK#3000K manufactured by DENKI KAGAKU KOGYO KABUSHIKI KAISHA) as a binder and a dispersing agent (tradename: BYK180 manufactured by BYK Japan KK)) are blended and mixed to prepare a slurry.
  • an organic solvent a mixture of toluene, xylene, 2-propanol and 2-butanol in a mass ratio of 4:2:2:1
  • a plasticizer di-2-ethylhexyl phthalate
  • polyvinyl butyral tradename: PVK#3000K manufactured by DENKI KAGAKU KOG
  • This slurry is applied on a PET film by a doctor blade method, followed by drying to prepare a ceramics green sheet for main body which will have a thickness of 1 mm after firing. Then, through-holes having a diameter of 0.3 mm are formed at portions corresponding to via conductors by means of a punching machine.
  • this ceramics green sheet for main body is held at 550° C. for 5 hours to carry out binder burn out and further held at 1,500° C. for 60 minutes to carry out firing to prepare a substrate made of alumina (alumina substrate).
  • an electroconductive powder (tradename: S400-2 manufactured by Daiken Chemical Co., Ltd.) and ethylcellulose as a vehicle are blended in a mass ratio of 90:10, and dispersed in ⁇ -terpineol as a solvent so that the solid content will be 87 mass %. Then, kneading is carried out in a porcelain mortar for 1 hour, and further, dispersion is carried out three times by a three roll mill to prepare a metal paste.
  • S400-2 manufactured by Daiken Chemical Co., Ltd.
  • the metal paste is filled by a screen printing method to form non-fired via conductor paste layers, and at the same time, a non-fired thick conductor layer is formed to obtain a ceramics substrate provided with a thick conductor layer.
  • this ceramics substrate provided with a thick conductor layer is held at 870° C. for 30 minutes to fire the metal paste thereby to prepare a substrate 10 for mounting element for test.
  • the thick conductor layer corresponding to symbol 2 is subjected to wet blast treatment under the following conditions.
  • the mixing ratio of the abrasive (blast material) and the liquid medium (water) is adjusted so that the abrasive is 40 vol % based on the entire blast liquid. Further, by applying a pressure of 1.5 kg/cm2 to the blast liquid mixed in such a ratio by means of a nozzle having an orifice diameter of 8 mm and made of boron carbide, the blast liquid is jetted from a jet orifice disposed at 5 cm above the transporting surface, towards the thick conductor layer which is continuously transported by a belt conveyor. The surface roughness Ra of the thick conductor layer is thereby made to be 0.01 ⁇ m. Further, the transporting rate of the belt conveyor is adjusted to 1.2 m/min.
  • a Ni-plated film of 7 ⁇ m is formed by electrolytic plating in a nickel sulfamic acid bath, and on its surface, a Au-plated film having a thickness of 0.3 ⁇ m is formed by electrolytic plating in a gold potassium cyanide bath.
  • the substrate 10 for mounting element thus obtained is subjected to exposure for 100 hours in a sulfurization test in accordance with JIS C-60068-2-43, whereby a black-colored defect due to precipitation of nickel sulfide will not form on the surface of the Au-plated film.
  • 1 inorganic insulating substrate
  • 2 thick conductor layer
  • 3 Ni/Au-plated layer
  • 4 via conductor
  • 10 substrate for mounting element

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US9532450B2 (en) 2013-03-12 2016-12-27 Apple Inc. Lowering the sheet resistance of a conductive layer
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CN115073005A (zh) * 2022-07-21 2022-09-20 西安宏星电子浆料科技股份有限公司 一种抗沉淀型ltcc绝缘介质浆料
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WO2018102998A1 (zh) * 2016-12-07 2018-06-14 东莞市国瓷新材料科技有限公司 一种带镀铜围坝的陶瓷封装基板制备方法
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US20140201993A1 (en) * 2010-01-29 2014-07-24 Asahi Glass Company, Limited Substrate for mounting element and process for its production
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US11574860B2 (en) 2018-07-27 2023-02-07 Murata Manufacturing Co., Ltd. Ceramic laminated substrate, module, and method of manufacturing ceramic laminated substrate
EP3991880A4 (de) * 2019-06-27 2023-07-26 Kyocera Corporation Elektronische vorrichtung und verfahren zur herstellung einer elektronischen vorrichtung
CN115073005A (zh) * 2022-07-21 2022-09-20 西安宏星电子浆料科技股份有限公司 一种抗沉淀型ltcc绝缘介质浆料

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