US20100012180A1 - Encapsulating and transferring low dimensional structures - Google Patents

Encapsulating and transferring low dimensional structures Download PDF

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Publication number
US20100012180A1
US20100012180A1 US12/444,875 US44487507A US2010012180A1 US 20100012180 A1 US20100012180 A1 US 20100012180A1 US 44487507 A US44487507 A US 44487507A US 2010012180 A1 US2010012180 A1 US 2010012180A1
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Prior art keywords
dimensional structures
low dimensional
group
matrix
low
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US12/444,875
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Stephen Day
Thomas Heinz-Helmut ALTEBAEUMER
Jonathan Heffernan
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Sharp Corp
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Sharp Corp
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Assigned to SHARP KABUSHIKI KAISHA reassignment SHARP KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ALTEBAEUMER, THOMAS HEINZ-HELMUT, HEFFERNAN, JONATHAN, DAY, STEPHEN
Publication of US20100012180A1 publication Critical patent/US20100012180A1/en
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/008—Manufacture of substrate-free structures separating the processed structure from a mother substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Lasers (AREA)
US12/444,875 2006-10-11 2007-10-11 Encapsulating and transferring low dimensional structures Pending US20100012180A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0620134.7 2006-10-11
GB0620134A GB2442768A (en) 2006-10-11 2006-10-11 A method of encapsulating low dimensional structures
PCT/JP2007/070299 WO2008047847A1 (en) 2006-10-11 2007-10-11 Encapsulating and transferring low dimensional structures

Publications (1)

Publication Number Publication Date
US20100012180A1 true US20100012180A1 (en) 2010-01-21

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US12/444,875 Pending US20100012180A1 (en) 2006-10-11 2007-10-11 Encapsulating and transferring low dimensional structures

Country Status (5)

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US (1) US20100012180A1 (ja)
JP (1) JP2010506735A (ja)
CN (1) CN101522558B (ja)
GB (1) GB2442768A (ja)
WO (1) WO2008047847A1 (ja)

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US20090137091A1 (en) * 2007-11-28 2009-05-28 Samsung Electronics Co., Ltd Methods of manufacturing semiconductor devices
US20090188557A1 (en) * 2008-01-30 2009-07-30 Shih-Yuan Wang Photonic Device And Method Of Making Same Using Nanowire Bramble Layer
US20110168256A1 (en) * 2007-12-21 2011-07-14 Shih-Yuan Wang Photonic Device And Method Of Making Same Using Nanowires
US20110180931A1 (en) * 2008-09-30 2011-07-28 Nxp B.V. Robust high aspect ratio semiconductor device
US20110284723A1 (en) * 2010-03-12 2011-11-24 Linyou Cao Semiconductor nano-wire antenna solar cells and detectors
US20120214066A1 (en) * 2011-02-17 2012-08-23 Board Of Regents, The University Of Texas System High Aspect Ratio Patterning of Silicon
US8362553B2 (en) 2008-04-01 2013-01-29 Sharp Kabushiki Kaisha Multifunctional tape
US8685844B2 (en) 2012-08-15 2014-04-01 International Business Machines Corporation Sub-10 nm graphene nanoribbon lattices
US20150155167A1 (en) * 2012-06-07 2015-06-04 Qunano Ab Method of manufacturing a structure adapted to be transferred to non-crystalline layer and a structure manufactured using said method
US20150287629A1 (en) * 2012-01-03 2015-10-08 International Business Machines Corporation Method and Structure to Reduce FET Threshold Voltage Shift Due to Oxygen Diffusion
WO2018085371A1 (en) * 2016-11-01 2018-05-11 Massachusetts Institute Of Technology Lift-off embedded micro and structures
US11588017B2 (en) * 2016-03-30 2023-02-21 Intel Corporation Nanowire for transistor integration

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GB2458906A (en) * 2008-04-01 2009-10-07 Sharp Kk Nanowire manufacture
JP2011523902A (ja) 2008-04-14 2011-08-25 バンドギャップ エンジニアリング， インコーポレイテッド ナノワイヤアレイを製造するためのプロセス
ES2810301T1 (es) * 2008-11-14 2021-03-08 Advanced Silicon Group Tech Llc Dispositivos nanoestructurados
SE533531C2 (sv) 2008-12-19 2010-10-19 Glo Ab Nanostrukturerad anordning
US8062568B2 (en) 2009-08-27 2011-11-22 Korea University Research And Business Foundation Nano pattern writer
WO2012066444A1 (en) * 2010-11-17 2012-05-24 International Business Machines Corporation Strained nanowire devices
US8736011B2 (en) * 2010-12-03 2014-05-27 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
US9312426B2 (en) 2011-12-07 2016-04-12 International Business Machines Corporation Structure with a metal silicide transparent conductive electrode and a method of forming the structure
CN103101877B (zh) * 2013-01-28 2016-04-27 北京大学 一种基于有序纳米线阵列的气敏元件制备方法
CN104362512B (zh) * 2014-10-13 2017-09-26 北京大学 一种硅基纳米激光器制备方法

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GB2442768A (en) 2008-04-16
CN101522558A (zh) 2009-09-02

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