US20090155952A1 - Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells - Google Patents
Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells Download PDFInfo
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- US20090155952A1 US20090155952A1 US11/956,069 US95606907A US2009155952A1 US 20090155952 A1 US20090155952 A1 US 20090155952A1 US 95606907 A US95606907 A US 95606907A US 2009155952 A1 US2009155952 A1 US 2009155952A1
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Images
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the size, mass and cost of a satellite power system are dependent on the power and energy conversion efficiency of the solar cells used. Putting it another way, the size of the payload and the availability of on-board services are proportional to the amount of power provided.
- solar cells which act as the power conversion devices for the on-board power systems, become increasingly more important.
- FIG. 3 is a cross-sectional view of the solar cell of FIG. 2 after the next process step
- FIG. 4 is a cross-sectional view of the solar cell of FIG. 3 after the next process step
- FIG. 6B is a bottom plan view of a wafer in which the solar cells are fabricated
- FIG. 7 is a top plan view of the wafer of FIG. 6A after the next process step
- FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 after the next process step.
- BSF layer 109 On top of the BSF layer 109 is deposited a sequence of heavily doped p-type and n-type layers 110 which forms a tunnel diode which is a circuit element to connect subcell A to subcell B.
- a window layer 111 is deposited on top of the tunnel diode layers 110 .
- the window layer 111 used in the subcell B also operates to reduce the recombination loss.
- the window layer 111 also improves the passivation of the cell surface of the underlying junctions. It should be apparent to one skilled in the art, that additional layer(s) may be added or deleted in the cell structure without departing from the scope of the present invention.
- a BSF layer 114 which performs the same function as the BSF layer 109 .
- a p++/n++tunnel diode 115 is deposited over the BSF layer 114 similar to the layers 110 , again forming a circuit element to connect subcell B to subcell C.
- a metamorphic layer (grading interlayer) 116 is deposited over the barrier layer 116 a .
- Layer 116 is preferably a compositionally step-graded series of InGaAlAs layers with monotonically changing lattice constant that is intended to achieve a transition in lattice constant from subcell B to subcell C.
- the band gap of layer 116 is preferably 1.5 ev consistent with a value slightly greater than the band gap of the middle subcell B.
- an optional second barrier layer 116 b may be deposited over the InGaAlAs metamorphic layer 116 .
- the second barrier layer 116 b will typically have a slightly different composition than that of barrier layer 116 a.
- a window layer 117 is deposited over the barrier layer 116 b , this window layer operating to reduce the recombination loss in subcell “C”. It should be apparent to one skilled in the art that additional layers may be added or deleted in the cell structure without departing from the scope of the present invention.
- a BSF layer 120 is deposited on top of the cell C, the BSF layer performing the same function as the BSF layers 109 and 114 .
- a p+ contact layer 121 is deposited on the BSF layer 120 .
- FIG. 2 is a cross-sectional view of the solar cell of FIG. 1 after the next process step in which a metal contact layer 122 is deposited over the p+ semiconductor contact layer 121 .
- the metal is preferably Ti/Au/Ag/Au.
- FIG. 5B is a cross-sectional view of the solar cell of FIG. 5A with the orientation with the surrogate substrate 124 being at the bottom of the Figure. Subsequent Figures in this application will assume such orientation.
- each cell there are grid lines 501 (more particularly shown in cross-section in FIG. 10 ), an interconnecting bus line 502 , and a contact pad 503 .
- the geometry and number of grid and bus lines is illustrative and the present invention is not limited to the illustrated embodiment.
- FIG. 8 is a simplified cross-sectional view of the solar cell of FIG. 5B depicting just a few of the top layers and lower layers over the surrogate substrate 124 .
- FIG. 10 is a cross-sectional view of the solar cell of FIG. 9 after the next sequence of process steps in which a photoresist mask (not shown) is placed over the contact layer 105 to form the grid lines 501 .
- the grid lines 501 are deposited via evaporation and lithographically patterned and deposited over the contact layer 105 .
- the mask is lifted off to form the metal grid lines 501 .
- FIG. 12 is a cross-sectional view of the solar cell of FIG. 11 after the next process step in which an antireflective (ARC) dielectric coating layer 130 is applied over the entire surface of the “bottom” side of the wafer with the grid lines 501 .
- ARC antireflective
- FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 In one embodiment after the next process step in which an adhesive is applied over the ARC layer 130 and a rigid coverglass attached thereto.
- the emitter doping decreases from approximately 5 ⁇ 10 18 per cubic centimeter in the region immediately adjacent the adjoining layer (e.g. layers 106 , 111 , or 117 ) to 5 ⁇ 10 17 per cubic centimeter in the region adjacent the p-n junction shown by the dotted line in FIG. 16 .
- the base doping increases exponentially from 1 ⁇ 10 16 per cubic centimeter adjacent the p-n junction to 1 ⁇ 10 18 per cubic centimeter adjacent the adjoining layer (e.g., layer 109 , 114 , or 120 ).
- the exponentially doped profile is the doping design which has been implemented and verified, other doping profiles may give rise to a linear varying collection field which may offer yet other advantages.
- a doping profile of e ⁇ x 2 / ⁇ 2 produces a linear field in the doped region which would be advantageous for both minority carrier collection and for radiation hardness at the end-of-life of the solar cell.
- Such other doping profiles in one or more base layer are within the scope of the present invention.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Photovoltaic Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/956,069 US20090155952A1 (en) | 2007-12-13 | 2007-12-13 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
US12/187,454 US7727795B2 (en) | 2007-12-13 | 2008-08-07 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
TW097132608A TWI355091B (en) | 2007-12-13 | 2008-08-26 | Exponentially doped layers in inverted metamorphic |
CNA2008101495330A CN101459204A (zh) | 2007-12-13 | 2008-09-10 | 反项变质多结太阳能电池中的指数掺杂层 |
JP2008269598A JP5318522B2 (ja) | 2007-12-13 | 2008-10-20 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
EP08021551.0A EP2073276B8 (fr) | 2007-12-13 | 2008-12-11 | Couches dopées de manière exponentielle dans des cellules solaires multi-jonctions métamorphiques inversées |
JP2013105060A JP5456923B2 (ja) | 2007-12-13 | 2013-05-17 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/956,069 US20090155952A1 (en) | 2007-12-13 | 2007-12-13 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/187,454 Division US7727795B2 (en) | 2007-12-13 | 2008-08-07 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
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US20090155952A1 true US20090155952A1 (en) | 2009-06-18 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US11/956,069 Abandoned US20090155952A1 (en) | 2007-12-13 | 2007-12-13 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
US12/187,454 Active US7727795B2 (en) | 2007-12-13 | 2008-08-07 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US12/187,454 Active US7727795B2 (en) | 2007-12-13 | 2008-08-07 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090155952A1 (fr) |
EP (1) | EP2073276B8 (fr) |
JP (2) | JP5318522B2 (fr) |
CN (1) | CN101459204A (fr) |
TW (1) | TWI355091B (fr) |
Cited By (73)
Publication number | Priority date | Publication date | Assignee | Title |
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US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20090078309A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
US20090272438A1 (en) * | 2008-05-05 | 2009-11-05 | Emcore Corporation | Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell |
US20100012174A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Corporation | High band gap contact layer in inverted metamorphic multijunction solar cells |
US20100012175A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
US20100031994A1 (en) * | 2008-08-07 | 2010-02-11 | Emcore Corporation | Wafer Level Interconnection of Inverted Metamorphic Multijunction Solar Cells |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20100093127A1 (en) * | 2006-12-27 | 2010-04-15 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film |
US20100116327A1 (en) * | 2008-11-10 | 2010-05-13 | Emcore Corporation | Four junction inverted metamorphic multijunction solar cell |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
US20100122724A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers |
US20100203730A1 (en) * | 2009-02-09 | 2010-08-12 | Emcore Solar Power, Inc. | Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells |
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Publication number | Publication date |
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CN101459204A (zh) | 2009-06-17 |
US20090155951A1 (en) | 2009-06-18 |
EP2073276B8 (fr) | 2019-03-06 |
US7727795B2 (en) | 2010-06-01 |
JP2013165299A (ja) | 2013-08-22 |
JP5318522B2 (ja) | 2013-10-16 |
TW200926426A (en) | 2009-06-16 |
JP5456923B2 (ja) | 2014-04-02 |
TWI355091B (en) | 2011-12-21 |
JP2009147309A (ja) | 2009-07-02 |
EP2073276A3 (fr) | 2012-09-19 |
EP2073276A2 (fr) | 2009-06-24 |
EP2073276B1 (fr) | 2018-11-21 |
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