US20090081113A1 - Method and apparatus for generating a carbon nanotube - Google Patents

Method and apparatus for generating a carbon nanotube Download PDF

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Publication number
US20090081113A1
US20090081113A1 US12/195,558 US19555808A US2009081113A1 US 20090081113 A1 US20090081113 A1 US 20090081113A1 US 19555808 A US19555808 A US 19555808A US 2009081113 A1 US2009081113 A1 US 2009081113A1
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United States
Prior art keywords
process chamber
source gas
catalyst powder
gas
source
Prior art date
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Abandoned
Application number
US12/195,558
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English (en)
Inventor
Suk-Won Jang
Byung-Yun Kong
Chung-Heon Jeong
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Semes Co Ltd
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Semes Co Ltd
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Assigned to SEMES CO., LTD. reassignment SEMES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JANG, SUK-WON, JEONG, CHUNG-HEON, KONG, BYUNG-YUN
Publication of US20090081113A1 publication Critical patent/US20090081113A1/en
Priority to US12/956,439 priority Critical patent/US8263014B2/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0869—Feeding or evacuating the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0871—Heating or cooling of the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0892—Materials to be treated involving catalytically active material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma
    • B01J2219/0898—Hot plasma

Definitions

  • the present invention relates to a method and an apparatus of generating a carbon nanotube (CNT). More particularly, the present invention relates to a method and an apparatus of generating a CNT by use of a catalyst powder.
  • CNT carbon nanotube
  • the process chamber 1 is partially enclosed by the heater in the conventional apparatus, because the heat generated from the heater 3 may have undesired effects on other elements of the apparatus around the process chamber 1 when the whole surface of the process chamber 1 is enclosed by the heater 3 . For that reason, the substrate is positioned only in a portion of the process chamber that is sufficiently enclosed by the heater 3 , which reduces the space efficiency of the process chamber 1 . Further, the reduction of the space efficiency of the process chamber 1 may prevent larger apparatuses from being used.
  • the first direction is directed to a lower portion of the process chamber from an upper portion thereof
  • the second direction is directed to the upper portion of the process chamber from the lower portion thereof.
  • the dispersion plate is positioned at a central portion of the process chamber spaced apart from a sidewall of the process chamber by a distance.
  • the source gas supplier further includes a dispersion plate that is positioned at a lower portion of the process chamber and dispersively supplies the source gas into the process chamber and the collector is arranged under the process chamber in such a configuration that the CNT is collected through a gap space between the dispersion plate and a sidewall of the process chamber.
  • FIG. 8 is a cross-sectional view schematically illustrating an apparatus for generating a CNT in accordance with another example embodiment of the present invention.
  • Example embodiments of the present invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
  • FIG. 2 is a cross-sectional view schematically illustrating an apparatus for generating a carbon nanotube (CNT) in accordance with example embodiments of the present invention
  • FIG. 3 is a plan view illustrating the apparatus for generating the CNT shown in FIG. 2 .
  • the catalyst supplier 300 may further include at least one spray nozzle 340 that is connected to an end portion of the catalyst supply pipe 320 in the process chamber 200 .
  • a plurality of the spray nozzles 340 is arranged on an inner side surface 210 of the lower process chamber 200 and is connected to the catalyst supply pipe 320 .
  • four spray nozzles are arranged on the inner side surface of the cylindrical process chamber 200 along the circumference of the cylindrical tube, as shown in FIG. 3 .
  • Many spray nozzles 340 for example, greater than four, may also be arranged on the inner side surface of the cylindrical process chamber at substantially the same gap distances along the circumference of the cylindrical tube, as would be known to one of ordinary skill in the art.
  • the spray nozzle 340 may be directed to an upper portion of the process chamber 200 at a spray angle with respect to a bottom of the cylindrical tube, so that the catalyst or the catalyst powder may be supplied to the upper portion of the process chamber, that is, to a top of the cylindrical process chamber 200 and the sidewall adjacent to the top thereof.
  • the catalyst powder may move down from the upper portion to the lower portion of the cylindrical process chamber 200 in a first direction. That is, the catalyst powder may freely fall downward in the first direction in the process chamber 20 .
  • the top surface of the dispersion plate 570 may be shaped into a curved surface, so that the source gas may be sufficiently injected in almost all directions covering most of the space over the dispersion plate 570 although the size of the dispersion plate 570 is smaller than that of the process chamber 200 . Accordingly, most of the catalyst powder may be interrupted while free-falling downward in the first direction in the process chamber 200 although the size of the dispersion plate 570 is smaller than that of the process chamber 200 .
  • the pressure controller 900 may be connected to the process chamber 200 and may control an internal pressure of the process chamber 200 .
  • the pressure controller 900 may include a vacuum pump 910 which pumps out the gas of the process chamber 200 , a pressure control pipe 920 interposed between the vacuum pump 910 and the process chamber 200 and a pressure control valve 930 positioned on a portion of the pressure control pipe 920 and controlling the amount of the gas pumped out from the process chamber 200 .
  • the pressure controller 900 may maintain the process chamber 200 to be in a vacuum state by reducing the internal pressure of the process chamber 200 .
  • the source gas reservoir 510 may include a reaction gas reservoir 540 and a carrier gas reservoir 550 .
  • the source gas may be heated in advanced by the source heater 580 and the preheated source gas may be supplied into the process chamber 200 .
  • the source gas may include acetylene (C 2 H 2 ), ethylene (C 2 H 4 ), methane (CH 4 ), benzene (C 6 H 6 ), xylene (C 6 H 4 (CH 3 ) 2 ), carbon monoxide (CO), or carbon dioxide (CO 2 )
  • the source gas may be activated into some radicals having carbon (C) by the source heater 580 . That is, the source gas may be supplied into the process chamber 200 as activated radicals, to thereby remarkably improve the generation efficiency of the CNTs.
  • FIG. 7 is a view illustrating a schematic structure of a gas exhauster shown in FIG. 2 .
  • the source gas may be exhausted from the process chamber 200 through the source outlet 814 at the upper portion of the body 812 and the catalyst powder may be exhausted from the process chamber 200 through the catalyst outlet 816 at the lower portion of the body 814 .
  • the source gas and the catalyst powder may be exhausted from the process chamber 200 by the gas exhauster 800 .
  • the size of the dispersion net 440 may be substantially smaller than that of the process chamber 200 .
  • the diameter of the dispersion net 440 may be substantially smaller than that of the process chamber 200 . Therefore, the catalyst powder may fall down through the dispersion holes 442 of the dispersion net 440 , so that the catalyst powder may be uniformly supplied into the space of the process chamber 200 .
  • the process chamber may be heated to a process temperature (step S 100 ) and the catalyst powder may be supplied into the heated process chamber in the first direction (step S 200 ).
  • the source gas may be supplied into the process chamber in the second direction opposite to the first direction (step S 300 ).
  • the top surface of the dispersion plate 570 may be shaped into a curved surface. Therefore, the source gas may be sufficiently injected in almost all directions covering most of the space over the dispersion plate 570 although the size of the dispersion plate 570 is smaller than that of the process chamber 200 . Accordingly, most of the catalyst powder may be interrupted while free-falling downward in the first direction in the process chamber 200 although the size of the dispersion plate 570 is smaller than that of the process chamber 200 .
  • the source gas is supplied into the process chamber 200 in the second direction substantially opposite to the first direction, to thereby reduce the drop velocity of the catalyst powder. Therefore, the source gas and the catalyst powder may be reacted with each other for a sufficiently long time. Particularly, control of the flow rate of the source gas allows control of the drop velocity reduction of the catalyst powder, and thus the source gas and the catalyst powder may be reacted with each other for a sufficiently long time. As a result, the CNTs may be efficiently generated in a relatively narrow space. In addition, the CNTs may be collected immediately when the CNTs are generated in the process chamber 200 while the catalyst powder falls down in the process chamber, to thereby improve the yield and purity of the CNTs.
  • the CNTs may be collected simultaneously with the generation of the CNTs in the process chamber 200
  • the CNTs may also be collected after completing the generation of the CNTs in the process chamber 200 using an additional collector, as would be known to one of ordinary skill in the art.
  • an additional buffer space may be located at a bottom portion of the process chamber 200 , and thus the generated CNTs may be temporarily stored into the buffer space and then may be extracted into the collector after completing the generation process of the CNTs.
  • a source gas may be supplied into a process chamber in a second direction opposite to a first direction along which a catalyst powder may be supplied into the process chamber, to thereby reduce the drop velocity of the catalyst powder. Therefore, the source gas and the catalyst powder may be reacted with each other for a sufficiently long time, to thereby improve the reaction rate of the source gas and the catalyst powder.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
US12/195,558 2007-08-21 2008-08-21 Method and apparatus for generating a carbon nanotube Abandoned US20090081113A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/956,439 US8263014B2 (en) 2007-08-21 2010-11-30 Method and apparatus for generating a carbon nanotube

Applications Claiming Priority (2)

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KR1020070083758A KR100916330B1 (ko) 2007-08-21 2007-08-21 탄소나노튜브 합성 방법 및 장치
KR10-2007-0083758 2007-08-21

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US20090081113A1 true US20090081113A1 (en) 2009-03-26

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US12/956,439 Expired - Fee Related US8263014B2 (en) 2007-08-21 2010-11-30 Method and apparatus for generating a carbon nanotube

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US (2) US20090081113A1 (ko)
JP (1) JP5159513B2 (ko)
KR (1) KR100916330B1 (ko)
CN (1) CN101372329B (ko)
TW (1) TWI397605B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
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US10166571B2 (en) * 2013-12-10 2019-01-01 Lg Display Co., Ltd. Refining method for microstructure
US10745280B2 (en) * 2015-05-26 2020-08-18 Department Of Electronics And Information Technology (Deity) Compact thermal reactor for rapid growth of high quality carbon nanotubes (CNTs) produced by chemical process with low power consumption

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US8951632B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US8951631B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
AU2010257117A1 (en) 2009-02-27 2011-08-11 Applied Nanostructured Solutions Llc Low temperature CNT growth using gas-preheat method
US20100227134A1 (en) 2009-03-03 2010-09-09 Lockheed Martin Corporation Method for the prevention of nanoparticle agglomeration at high temperatures
JP5629756B2 (ja) * 2009-04-10 2014-11-26 アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニーＡｐｐｌｉｅｄ Ｎａｎｏｓｔｒｕｃｔｕｒｅｄｓｏｌｕｔｉｏｎｓ， Ｌｌｃ 連続的に移動する基材上においてカーボン・ナノチューブを製造する装置及び方法
CN102470546B (zh) 2009-08-03 2014-08-13 应用纳米结构方案公司 纳米颗粒在复合材料纤维中的结合
BR112013005802A2 (pt) 2010-09-14 2016-05-10 Applied Nanostructured Sols substratos de vidro com nanotubos de carbono crescidos sobre os mesmos e métodos para sua produção
CN104591123A (zh) 2010-09-22 2015-05-06 应用奈米结构公司 具有碳纳米管成长于其上的碳纤维基板及其制造方法
CN103253650B (zh) * 2013-05-22 2015-03-25 苏州工业园区日高能源科技有限公司 一种纳米碳材的制备方法
KR101625307B1 (ko) * 2014-12-24 2016-06-08 오씨아이 주식회사 활성탄소섬유 제조장치
JP7090789B2 (ja) * 2018-03-26 2022-06-24 スーチョウ・ジェルナノ・カーボン・カンパニー・リミテッド カーボンナノチューブ製造システム
CN113044596B (zh) * 2021-03-17 2022-12-09 淮北敬佑信息科技有限公司 一种木炭加工用转运装置
US20240238814A1 (en) * 2021-07-12 2024-07-18 Lg Chem, Ltd. Distributing Plate for High-Viscosity Fluid and Apparatus of Distributing High-Viscosity Fluid Including the Same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102647A (en) * 1988-04-12 1992-04-07 Showa Denko K.K. Method of producing vapor growth carbon fibers
US5413773A (en) * 1990-10-09 1995-05-09 General Motors Corporation Method for forming carbon filters
US20040151654A1 (en) * 2001-05-25 2004-08-05 Fei Wei Continuous mass production of carbon nanotubes in a nano-agglomerate fluidized-bed and the reactor
US20050074392A1 (en) * 2002-07-31 2005-04-07 Yuemei Yang Method for making single-wall carbon nanotubes using supported catalysts
US20050260355A1 (en) * 2004-05-20 2005-11-24 Jan Weber Medical devices and methods of making the same
US20060093642A1 (en) * 2004-11-03 2006-05-04 Ranade Shrirang V Method of incorporating carbon nanotubes in a medical appliance, a carbon nanotube medical appliance, and a medical appliance coated using carbon nanotube technology

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360686B1 (ko) 2000-07-27 2002-11-13 일진나노텍 주식회사 탄소나노튜브 또는 탄소나노섬유 합성용 기상합성장치 및이를 사용한 합성 방법
KR100376202B1 (ko) * 2000-10-02 2003-03-15 일진나노텍 주식회사 탄소나노튜브 또는 탄소나노섬유 합성용 기상합성 장치 및이를 사용한 합성방법
JP4852787B2 (ja) * 2001-01-12 2012-01-11 三菱化学株式会社 炭素製造装置
JP4160781B2 (ja) * 2002-05-27 2008-10-08 三菱重工業株式会社 繊維状ナノ炭素の製造方法及び装置
JP4082099B2 (ja) * 2002-06-13 2008-04-30 三菱化学エンジニアリング株式会社 炭素質微細繊維状体の製造方法
JP3913181B2 (ja) * 2003-02-06 2007-05-09 三菱重工業株式会社 カーボンナノファイバの製造方法及び製造装置
KR100712690B1 (ko) * 2005-07-19 2007-05-02 주식회사 제이오 루프형 탄소나노튜브 대량합성장치 및 탄소나노튜브대량합성방법
JP4550040B2 (ja) * 2005-12-16 2010-09-22 セメス株式会社 カーボンナノチューブの合成装置及び方法
FR2895393B1 (fr) * 2005-12-23 2008-03-07 Arkema Sa Procede de synthese de nanotubes de carbone
KR100732623B1 (ko) 2006-01-17 2007-06-27 (주)씨엔티 탄소나노튜브 대량합성장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102647A (en) * 1988-04-12 1992-04-07 Showa Denko K.K. Method of producing vapor growth carbon fibers
US5413773A (en) * 1990-10-09 1995-05-09 General Motors Corporation Method for forming carbon filters
US20040151654A1 (en) * 2001-05-25 2004-08-05 Fei Wei Continuous mass production of carbon nanotubes in a nano-agglomerate fluidized-bed and the reactor
US20050074392A1 (en) * 2002-07-31 2005-04-07 Yuemei Yang Method for making single-wall carbon nanotubes using supported catalysts
US20050260355A1 (en) * 2004-05-20 2005-11-24 Jan Weber Medical devices and methods of making the same
US20060093642A1 (en) * 2004-11-03 2006-05-04 Ranade Shrirang V Method of incorporating carbon nanotubes in a medical appliance, a carbon nanotube medical appliance, and a medical appliance coated using carbon nanotube technology

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10166571B2 (en) * 2013-12-10 2019-01-01 Lg Display Co., Ltd. Refining method for microstructure
US11141890B2 (en) 2013-12-10 2021-10-12 Lg Display Co., Ltd. Substrate including nano/micro structure, method for manufacturing the same, method for refining nano/micro structure, method for manufacturing nano/micro structure network, and manufacturing apparatus therefor
US10745280B2 (en) * 2015-05-26 2020-08-18 Department Of Electronics And Information Technology (Deity) Compact thermal reactor for rapid growth of high quality carbon nanotubes (CNTs) produced by chemical process with low power consumption

Also Published As

Publication number Publication date
TWI397605B (zh) 2013-06-01
CN101372329A (zh) 2009-02-25
CN101372329B (zh) 2012-04-25
US8263014B2 (en) 2012-09-11
TW200909605A (en) 2009-03-01
JP2009046387A (ja) 2009-03-05
JP5159513B2 (ja) 2013-03-06
US20110097247A1 (en) 2011-04-28
KR100916330B1 (ko) 2009-09-11
KR20090019381A (ko) 2009-02-25

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