JP5629756B2 - 連続的に移動する基材上においてカーボン・ナノチューブを製造する装置及び方法 - Google Patents
連続的に移動する基材上においてカーボン・ナノチューブを製造する装置及び方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/164—Preparation involving continuous processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Organic Chemistry (AREA)
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Description
本願は、2009年4月10日出願の米国仮特許出願第61/168,516号、及び2010年1月15日出願の米国仮特許出願第61/295,624号に基づいて優先権を主張するものであり、これらは参照により全て本明細書に組み込まれる。
適用なし。
Claims (15)
- 巻き取り可能な長さの基材が通過できる大きさに形成された基材入口を有する第1の端部と、
パージガス流入口を備え、予熱された第1パージゾーンと、
パージガス流入口を備え、冷却された第2パージゾーンと、
前記第1パージゾーンと前記第2パージゾーンとの間に配設され、内部で触媒還元及びカーボン・ナノチューブ成長が起こる少なくとも1つのカーボン・ナノチューブ成長ゾーンと、
前記カーボン・ナノチューブ成長ゾーンと熱的に連結し、550℃から850℃の範囲の温度となるように前記カーボン・ナノチューブ成長ゾーンを加熱する少なくとも1つの加熱器と、
前記カーボン・ナノチューブ成長ゾーンと流体的に連結し、前記第1パージゾーン及び前記第2パージゾーンと離隔して前記カーボン・ナノチューブ成長ゾーンの中心近傍にある少なくとも1つの供給ガス流入口と、
前記巻き取り可能な長さの基材が通過できる大きさに形成された基材出口を有する第2の端部と、
を含んで構成され、
前記巻き取り可能な長さの基材が、表面にカーボン・ナノチューブを合成可能なあらゆる材料を含み、かつ、長さの限定されない少なくとも1つの寸法を有し、
運転中、大気に開放されている装置。 - 前記触媒還元は、加熱された前記カーボン・ナノチューブ成長ゾーンに前記基材が入ったときに起こり、前記カーボン・ナノチューブ成長は、前記少なくとも1つの供給ガス流入口の近傍において最速の成長速度で起こる請求項1に記載の装置。
- 前記供給ガス流入口が前記カーボン・ナノチューブ成長ゾーンにある請求項1に記載の装置。
- 前記第1パージゾーンと前記カーボン・ナノチューブ成長ゾーンとの間、及び前記第2パージゾーンと前記カーボン・ナノチューブ成長ゾーンとの間にそれぞれ配置された1以上の排気口を更に含んで構成された請求項1〜請求項3のいずれか1つに記載の装置。
- 前記カーボン・ナノチューブ成長ゾーンの横断面積は、前記巻き取り可能な長さの基材の横断面積の約10000倍以下である請求項1に記載の装置。
- 前記カーボン・ナノチューブ成長ゾーンの横断面は矩形である請求項1〜請求項5のいずれか1つに記載の装置。
- 前記カーボン・ナノチューブ成長ゾーンが金属の筐体により形成された請求項1〜請求項6のいずれか1つに記載の装置。
- 前記金属がステンレス鋼を含んで構成された請求項7に記載の装置。
- 前記カーボン・ナノチューブ成長ゾーンが、前記巻き取り可能な長さの基材の一部の容積の約10000倍以下の内部容積を備え、前記巻き取り可能な長さの基材の前記一部は、前記カーボン・ナノチューブ成長ゾーンの長さと略等しい長さを備えた請求項1に記載の装置。
- 巻き取り可能な長さの基材が通過できる大きさに形成された基材入口を有する第1の端部と、
パージガス流入口を備え、予熱された第1パージゾーンと、
パージガス流入口を備え、冷却された第2パージゾーンと、
前記第1パージゾーンと前記第2パージゾーンとの間に配設された少なくとも1つのカーボン・ナノチューブ成長ゾーンと、
前記カーボン・ナノチューブ成長ゾーンと熱的に連結した少なくとも1つの加熱器と、
前記カーボン・ナノチューブ成長ゾーンと流体的に連結し、前記第1パージゾーン及び前記第2パージゾーンと離隔して前記カーボン・ナノチューブ成長ゾーンの中心近傍にある少なくとも1つの供給ガス流入口と、
前記巻き取り可能な長さの基材が通過できる大きさに形成された基材出口を有する第2の端部と、
を含んで構成された、運転中に大気に開放されている装置を提供すること、
表面にカーボン・ナノチューブを合成可能なあらゆる材料を含み、かつ、長さの限定されない少なくとも1つの寸法を有する前記基材を提供すること、
前記基材の一部を、前記基材入口を介して前記カーボン・ナノチューブ成長ゾーンに導入すること、
550℃から850℃の範囲の温度となるように前記カーボン・ナノチューブ成長ゾーンを加熱すること、
前記カーボン・ナノチューブ成長ゾーンに供給ガスを導入すること、及び
前記カーボン・ナノチューブ成長ゾーン内で触媒還元及びカーボン・ナノチューブ成長が起きて、カーボン・ナノチューブを前記基材の一部に生じるように、前記基材の一部を前記カーボン・ナノチューブ成長ゾーンに通すこと、
を含んで構成された方法。 - 前記基材の一部及びその表面に形成されたカーボン・ナノチューブを前記カーボン・ナノチューブ成長ゾーンから取り出すことを更に含んで構成された請求項10に記載の方法。
- 前記第1パージゾーンが、前記基材の一部を前記カーボン・ナノチューブ成長ゾーンに導入する前にパージされる請求項10に記載の方法。
- 前記供給ガスを前記カーボン・ナノチューブ成長ゾーンに導入する前に供給ガスを予熱することを更に含んで構成された請求項10に記載の方法。
- 前記第2パージゾーンは、前記基材の一部が前記カーボン・ナノチューブ成長ゾーンを通過した後でパージされる請求項12に記載の方法。
- 前記巻き取り可能な長さの基材を前記装置に連続的に通すことを更に含んで構成された請求項10に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16851609P | 2009-04-10 | 2009-04-10 | |
US61/168,516 | 2009-04-10 | ||
US29562410P | 2010-01-15 | 2010-01-15 | |
US61/295,624 | 2010-01-15 | ||
PCT/US2010/025660 WO2010117515A1 (en) | 2009-04-10 | 2010-02-26 | Apparatus and method for the production of carbon nanotubes on a continuously moving substrate |
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Publication Number | Publication Date |
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JP2012523363A JP2012523363A (ja) | 2012-10-04 |
JP5629756B2 true JP5629756B2 (ja) | 2014-11-26 |
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JP2012504678A Active JP5629756B2 (ja) | 2009-04-10 | 2010-02-26 | 連続的に移動する基材上においてカーボン・ナノチューブを製造する装置及び方法 |
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US (1) | US20100260933A1 (ja) |
EP (1) | EP2417286B1 (ja) |
JP (1) | JP5629756B2 (ja) |
KR (1) | KR101696212B1 (ja) |
CN (1) | CN102388171B (ja) |
AU (1) | AU2010235123A1 (ja) |
BR (1) | BRPI1010288A2 (ja) |
CA (1) | CA2756852A1 (ja) |
DK (1) | DK2417286T3 (ja) |
WO (1) | WO2010117515A1 (ja) |
ZA (1) | ZA201106735B (ja) |
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AU2010235123A1 (en) | 2011-10-06 |
EP2417286A1 (en) | 2012-02-15 |
EP2417286A4 (en) | 2012-08-15 |
US20100260933A1 (en) | 2010-10-14 |
ZA201106735B (en) | 2012-08-28 |
CN102388171A (zh) | 2012-03-21 |
WO2010117515A1 (en) | 2010-10-14 |
CN102388171B (zh) | 2015-02-11 |
CA2756852A1 (en) | 2010-10-14 |
DK2417286T3 (en) | 2015-08-17 |
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