US20080216865A1 - Plasma Processing Method - Google Patents

Plasma Processing Method Download PDF

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Publication number
US20080216865A1
US20080216865A1 US11/834,046 US83404607A US2008216865A1 US 20080216865 A1 US20080216865 A1 US 20080216865A1 US 83404607 A US83404607 A US 83404607A US 2008216865 A1 US2008216865 A1 US 2008216865A1
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US
United States
Prior art keywords
processing
gas
transferring
plasma
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/834,046
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English (en)
Inventor
Masunori Ishihara
Masamichi Sakaguchi
Yasuhiro Nishimori
Yutaka Kudou
Satoshi Une
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHIHARA, MASUNORI, KUDOU, YUTAKA, NISHIMORI, YASUHIRO, SAKAGUCHI, MASAMICHI, UNE, SATOSHI
Publication of US20080216865A1 publication Critical patent/US20080216865A1/en
Priority to US12/437,941 priority Critical patent/US7909933B2/en
Priority to US13/019,131 priority patent/US8277563B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber

Definitions

  • the present invention relates to a plasma processing method using a plasma processing apparatus comprising a plurality of plasma processing chambers for processing samples such as semiconductor wafers, a transfer chamber connected to the processing chambers for transferring samples and a supply system for supplying gas which is the same gas as the transferring gas supplied to the transfer chamber to both the transfer chamber and processing chambers or only to the processing chambers when transferring samples from the transfer chamber to the processing chambers, and specifically, relates to a method for reducing particles attached to the samples during the transferring of semiconductor wafers and other samples into the processing chamber, plasma processing of samples in the processing chambers and transferring of samples out of the processing chambers.
  • a plasma processing apparatus further comprises a load lock chamber for transferring samples stored in cassettes to the interior of the apparatus, and generally comprises a transfer chamber adjacent to the load lock chamber for transferring the samples sent into the apparatus to multiple processing chambers disposed adjacent thereto.
  • the pressure within the processing chamber is reduced from the pressure of the transferring gas supplied to the processing chamber to high-vacuum evacuation pressure, and then fluctuated to the pressure of plasma generation atmosphere of the processing gas, and along with this pressure fluctuation in the processing chamber, the particles deposited on the inner side walls of the processing chamber are flung up.
  • the supply of plasma processing gas is stopped and high-vacuum evacuation is performed before supplying transferring gas, so that a similar pressure fluctuation occurs in the processing chamber, causing particles deposited on the inner side walls of the processing chamber to be flung up by pressure fluctuation in the processing chamber similar to when the plasma processing is started.
  • Patent document 1 Japanese Patent Application Laid-Open Publication No. 2004-281832
  • gas is supplied from a gas supply unit to either the processing chambers or the transfer chamber or to both the processing chambers and transfer chamber when carrying the samples into and out of the processing chambers, so as to minimize the pressure difference between the chambers and to prevent generation of particles caused by flinging up of particles by turbulent airflow.
  • the present applicant has proposed, for example in Japanese Patent Application No. 2006-162612 (patent document 2), to switch the scavenging gas supplied to the processing chamber to processing gas, perform plasma processing by generating plasma from processing gas, and after terminating the plasma processing, maintaining plasma while switching from processing gas to scavenging gas.
  • patent document 2 does not disclose how a sample is carried into the processing chamber from the transfer chamber while supplying transferring gas into the processing chamber, how plasma is generated from transferring gas, how transferring gas is switched to processing gas while maintaining plasma to perform plasma processing, how processing gas is switched to transferring gas while maintaining plasma by processing gas, and how plasma is terminated and then the sample is carried out of the processing chamber to the transfer chamber.
  • the object of the present invention is to provide a plasma processing apparatus and a plasma processing method capable of minimizing pressure fluctuation in the processing chamber during a series of processes from the carrying in of the sample to the processing chamber, plasma processing of the sample and carrying out of the sample, and thereby reducing the attaching of particles to the sample.
  • the present invention supplies transferring gas to the processing chamber when transferring a sample from the transfer chamber to the processing chamber and maintains the supply of transferring gas to the processing chamber even after transferring the sample.
  • plasma processing plasma is generated from the transferring gas supplied into the processing chamber, and then the transferring gas is switched to processing gas while maintaining plasma to start plasma processing. Thereafter, at the end of the plasma processing, the supplied gas is continuously switched from processing gas to transferring gas while maintaining plasma, then the plasma is terminated, and the supply of transferring gas is maintained after terminating plasma to carry the sample out of the processing chamber.
  • plasma is generated from transferring gas, and the plasma is maintained while continuously switching supplied gas from transferring gas to processing gas, and after the plasma processing is terminated, the plasma is maintained while continuously switching supplied gas from processing gas to transferring gas, so that the sample is carried out while the supply of transferring gas is continued, and the pressure fluctuation within the processing chamber is minimized, according to which the attaching of particles to the sample due to flinging up of particles by airflow is reduced, and the attaching of particles is further reduced by evacuating the particles existing in the plasma at the time the plasma processing is terminated by the airflow of transferring gas.
  • FIG. 1A is a cross-sectional plan view showing the structure of the plasma processing apparatus for carrying out the present invention
  • FIG. 1B is an upper perspective view showing the structure of the plasma processing apparatus for carrying out the present invention.
  • FIG. 2 is across-sectional view showing a typified structure of a vacuum processing chamber and a gas supply system of the plasma processing apparatus for carrying out the present invention
  • FIG. 3A is a timing chart illustrating the processes and pressure fluctuation in the processing chamber according to a common prior art method.
  • FIG. 3B is a timing chart illustrating the processes and pressure fluctuation in the processing chamber according to the preferred embodiment of the present invention.
  • FIG. 1A is an upper cross-sectional view of the plasma processing apparatus
  • FIG. 1B is a perspective side view thereof.
  • the plasma processing apparatus is largely divided into an atmospheric block 101 and a processing block 102 .
  • the atmospheric block 101 is the portion in which wafers are transferred in atmospheric pressure to be stored or positioned
  • the processing block 102 is the portion in which wafers are transferred under pressure depressurized from atmospheric pressure for processing, and the pressure thereof is varied while the wafer is placed therein.
  • the atmospheric block 101 has a housing 106 with a transfer robot 109 disposed therein, and includes cassettes 107 - 1 through 107 - 3 attached to the housing having processing samples or cleaning samples stored therein.
  • the processing block 102 has processing chambers 103 - 1 , 103 - 2 and 103 - 3 being depressurized for processing samples, a transfer chamber 104 for transferring samples into the processing chambers, and lock chambers 105 and 105 ′ connecting the transfer chamber 104 and the atmospheric block 101 .
  • the processing block 102 is a unit capable of being depressurized and maintained at a high vacuum pressure.
  • the processing block 102 also comprises a transfer chamber gas supply system 110 and processing chamber gas supply systems 111 - 1 , 111 - 2 , 111 - 3 and 111 - 4 .
  • the transfer chamber gas supply system 110 and the processing chamber gas supply systems 111 - 1 through 111 - 4 constitute a system for supplying inert gas via a mass flow controller when carrying samples in and out of the transfer chamber 104 and processing chambers 103 - 1 through 103 - 4 , so that the pressure difference between the chambers is minimized to prevent particles from being flung up and to prevent causes of particles such as the reaction product atmosphere from flowing into the transfer chamber 104 from the processing chamber 103 via airflow.
  • FIG. 2 is referred to in describing the outline of the structures of the interior of the processing vessel and the gas supply system of the processing chamber 103 .
  • Each vacuum processing chamber is formed of a top member 201 , a gas supply ring 202 and a vacuum vessel wall 203 .
  • the interior space of the processing chamber is maintained at high vacuum via a vacuum pump 204 .
  • a sample stage 205 for mounting wafers is disposed in the interior of the vacuum processing chamber. Plasma processing is performed with the wafer or object to be processed being positioned on the sample stage.
  • the gas used for wafer transfer, or transferring gas is inert gas such as argon (Ar) and nitrogen (N 2 ), and the processing gas used for plasma processing includes multiple processing gases selected according to various processing conditions.
  • the transferring gas has its flow rate controlled via a mass flow controller 210 , and with valves 212 and 213 opened and valves 217 and 216 closed, the gas is supplied into the space formed between the top member 201 and a gas diffusion plate 206 through a gas supply ring 202 , and introduced to the vacuum processing chamber through multiple small-diameter holes 207 formed on a gas diffusion plate 206 .
  • Wafer is carried into the processing chamber from the transfer chamber with the transferring gas supplied into the processing chamber. Even after placing the wafer on the sample stage, the supply of transferring gas into the processing chamber is maintained.
  • the transferring gas supplied to the interior of the vacuum vessel is turned into plasma by the electromagnetic waves generated by a magnetron 208 and the magnetic field generated by a solenoid coil 209 .
  • gas molecules are dissociated into electrons and radicals.
  • the multiple processing gases used for plasma processing are controlled to flow rates set for actual use via mass flow controllers 211 a and 211 b, and with the valves 215 a, 215 b and 214 opened and valves 216 and 217 closed, the processing gas is flown through a discharge gas system 218 to control the gas flow rate to a stable set flow rate.
  • the gas supply into the processing chamber is switched from transferring gas to processing gas by closing valves 213 and 214 and opening valves 216 and 217 , so as to realize continuous switching of plasma processing from transferring gas to processing gas with a stable set flow rate.
  • the plasma within the processing chamber is switched from plasma generated from transferring gas to plasma generated from processing gas, according to which the plasma status is maintained, and the plasma processing of the wafers (samples) is performed.
  • the transferring gas is controlled to a stable set flow rate by being flown through a discharge gas system 218 with the flow rate controlled via the mass flow controller 210 and with the valves 212 and 217 opened and valve 213 closed.
  • the valves 216 and 217 are closed and valves 213 and 214 are opened while maintaining plasma, so that the gas being supplied to the processing chamber is switched from processing gas to transferring gas with a stable set flow rate, enabling to maintain plasma continuously in the processing chamber.
  • the sample is transferred to the transfer chamber while maintaining the supply of transferring gas to the processing chamber.
  • FIG. 3A shows a timing chart of a typical prior art process
  • FIG. 3B shows a timing chart according to the present invention.
  • the supply of transferring gas to the processing chamber is stopped, and after evacuating the transferring gas, processing gas is supplied and plasma is ignited to start the plasma processing
  • the supply of processing gas is stopped and plasma is extinguished simultaneously to terminate plasma processing
  • the transferring gas is supplied.
  • the pressure within the processing chamber is fluctuated during timings 301 and 302 until the processing gas or the transferring gas is supplied.
  • a step of turning the supplied transferring gas into plasma by feeding plasma generating high frequency waves into the processing chamber and creating a magnetic field in the processing chamber;
  • a step of terminating plasma processing by stopping the application of bias voltage and switching the gas supplied to the processing chamber from processing gas to transferring gas while maintaining plasma;
  • the present plasma processing method it becomes possible to transfer the sample into the processing chamber with little pressure difference between the processing chamber and the transfer chamber according to step b, and thus, it becomes possible to reduce the attaching of particles to the sample caused by flinging up of particles by airflow and the like.
  • the processes of step c and step d enable the plasma processing to be started promptly and the pressure fluctuation within the processing chamber to be suppressed, according to which the throughput can be improved and the attaching of particles to the sample caused by the flinging up of particles by air flow can be reduced.
  • the process of step f enables to minimize the fluctuation of pressure when terminating the plasma process, according to which the attaching of particles to the sample caused by the flinging up of particles by airflow can be reduced.
  • step g enables to remove the static electricity of the sample caused by the operation of the chucking electrode.
  • step h enables the sample to be carried out into the transfer chamber with little pressure difference between the processing chamber and the transfer chamber, according to which the attaching of particles to the sample caused by the flinging up of particles by airflow can be reduced.
  • the present invention enables to reduce the pressure fluctuation in the pressure chamber during transferring of the sample after stopping the plasma and to reduce the attaching of particles caused by the flinging up of particles by airflow by introducing transferring gas into the processing chamber at timing 303 , thereafter carrying the sample into the processing chamber, generating plasma from transferring gas, switching the gas supplied to the processing chamber to processing gas while maintaining plasma and performing plasma processing, and after the plasma processing is terminated, switching the gas from processing gas to transferring gas while maintaining plasma at timing 304 .
  • the present invention enables to effectively minimize the pressure difference even without generating plasma by merely switching the gas supplied to the processing chamber from transferring gas to processing gas or from processing gas to transferring gas.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US11/834,046 2007-03-08 2007-08-06 Plasma Processing Method Abandoned US20080216865A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/437,941 US7909933B2 (en) 2007-03-08 2009-05-08 Plasma processing method
US13/019,131 US8277563B2 (en) 2007-03-08 2011-02-01 Plasma processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058664A JP5095242B2 (ja) 2007-03-08 2007-03-08 プラズマ処理方法
JP2007-058664 2007-03-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/437,941 Continuation US7909933B2 (en) 2007-03-08 2009-05-08 Plasma processing method

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US20080216865A1 true US20080216865A1 (en) 2008-09-11

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US11/834,046 Abandoned US20080216865A1 (en) 2007-03-08 2007-08-06 Plasma Processing Method
US12/437,941 Active US7909933B2 (en) 2007-03-08 2009-05-08 Plasma processing method
US13/019,131 Active US8277563B2 (en) 2007-03-08 2011-02-01 Plasma processing method

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Application Number Title Priority Date Filing Date
US12/437,941 Active US7909933B2 (en) 2007-03-08 2009-05-08 Plasma processing method
US13/019,131 Active US8277563B2 (en) 2007-03-08 2011-02-01 Plasma processing method

Country Status (4)

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US (3) US20080216865A1 (enrdf_load_stackoverflow)
JP (1) JP5095242B2 (enrdf_load_stackoverflow)
KR (1) KR100893911B1 (enrdf_load_stackoverflow)
TW (1) TW200837808A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11517942B2 (en) * 2017-02-13 2022-12-06 Edwards, S.R.O. Cleaning method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129819A (ja) * 2008-11-28 2010-06-10 Hitachi High-Technologies Corp 真空処理装置の運転方法
JP2013153029A (ja) 2012-01-25 2013-08-08 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP5588529B2 (ja) * 2013-02-26 2014-09-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP2018147911A (ja) * 2017-03-01 2018-09-20 東レエンジニアリング株式会社 ボンディングヘッド冷却システムおよびこれを備えた実装装置ならびに実装方法

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US5968279A (en) * 1997-06-13 1999-10-19 Mattson Technology, Inc. Method of cleaning wafer substrates
US6814087B2 (en) * 1999-02-04 2004-11-09 Applied Materials, Inc. Accelerated plasma clean

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11517942B2 (en) * 2017-02-13 2022-12-06 Edwards, S.R.O. Cleaning method

Also Published As

Publication number Publication date
US20110120495A1 (en) 2011-05-26
JP2008226891A (ja) 2008-09-25
US20090214401A1 (en) 2009-08-27
TWI358756B (enrdf_load_stackoverflow) 2012-02-21
TW200837808A (en) 2008-09-16
US8277563B2 (en) 2012-10-02
US7909933B2 (en) 2011-03-22
KR20080082421A (ko) 2008-09-11
JP5095242B2 (ja) 2012-12-12
KR100893911B1 (ko) 2009-04-21

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Owner name: HITACHI HIGH-TECHNOLOGIES CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ISHIHARA, MASUNORI;SAKAGUCHI, MASAMICHI;NISHIMORI, YASUHIRO;AND OTHERS;REEL/FRAME:019833/0881

Effective date: 20070718

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION