US20070234956A1 - Method and apparatus for providing uniform gas delivery to a reactor - Google Patents

Method and apparatus for providing uniform gas delivery to a reactor Download PDF

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Publication number
US20070234956A1
US20070234956A1 US11/278,700 US27870006A US2007234956A1 US 20070234956 A1 US20070234956 A1 US 20070234956A1 US 27870006 A US27870006 A US 27870006A US 2007234956 A1 US2007234956 A1 US 2007234956A1
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United States
Prior art keywords
gas
gas source
source orifice
reactor
distance
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Abandoned
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US11/278,700
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English (en)
Inventor
Jeremie Dalton
M. Karim
Ana Londergan
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Genus Inc
Aixtron Inc
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Individual
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Priority to US11/278,700 priority Critical patent/US20070234956A1/en
Assigned to GENUS, INC. reassignment GENUS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KARIM, M. ZIAUL, LONDERGAN, ANA R., DALTON, JEREMIE J.
Priority to KR1020070031718A priority patent/KR101373828B1/ko
Priority to EP07251447A priority patent/EP1842938A3/en
Priority to JP2007099449A priority patent/JP2007277723A/ja
Priority to CNA2007100898274A priority patent/CN101050524A/zh
Publication of US20070234956A1 publication Critical patent/US20070234956A1/en
Priority to US12/553,917 priority patent/US7981472B2/en
Assigned to AIXTRON, INC. reassignment AIXTRON, INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: GENUS, INC.
Priority to US13/168,792 priority patent/US20110253046A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Definitions

  • the present invention relates to a gas distribution system for an atomic layer deposition or chemical vapor deposition processing system in which a vapor phase precursor is transported from an upstream source to a reaction space above a substrate.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • the flux of vapor precursors to the substrate must be tightly controlled and shaped. Often, there can be multiple gaseous precursors that must react to form the desired film and all must be delivered to the substrate in a precise and controllable manner. In some cases, it is advantageous to mix these multiple precursors together prior to introducing them into the reactor chamber. In other cases, it is preferable to maintain the precursors isolated from one another until they come into contact with the substrate so as to prevent any unwanted premature reactions.
  • the showerhead faceplate has a number of gas passageways to provide a plurality of gases to the process region without commingling of those gases.
  • a gas distribution manifold assembly is coupled so as to provide the different gasses to the various gas holes in the faceplate.
  • FIG. 1 illustrates this condition. Shown in the diagram is a cut away view of a showerhead apparatus 10 having two individual gas manifolds generally indicated at 12 and 14 .
  • the upper manifold 12 includes gas passageways 16 a and 16 b , which provide means for the gas in manifold 12 to exit via holes 18 a and 18 b in the faceplate 20 of showerhead 10 .
  • the lower manifold 14 includes gas passageways 22 a and 22 b , which provide means for the gas in manifold 14 to exit via holes 24 a and 24 b in faceplate 20 .
  • One embodiment of the present invention provides a gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between an upper one of the gas source orifice arrays and the work-piece deposition surface.
  • the precise distance from the upper gas source orifice array (or the lower gas source orifice array) to the work-piece deposition surface depends on a number of factors, including the shape of the individual orifices in each of the arrays and the gas flow rates for each array.
  • the orifice arrays are positioned within the reactor such that a relatively uniform deposition over the work-piece surface can be achieved using the necessary gases and flow rates for the particular layer to be deposited.
  • the spacing between individual orifices of each array will affect the nature and quality of the deposited layer.
  • orifices in the upper one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface
  • orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-2 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.
  • the higher one of the gas source orifice arrays may be a planar showerhead having a generally uniform distribution of orifices across its faceplate.
  • the lower one of the gas source orifice arrays may include one or more conduits distributed axi-symetrically with respect to a radius of the planar showerhead.
  • the lower one of the gas source orifice arrays may include a number of spoke conduits leading from an axially centered feed conduit, and each spoke conduit including a number of individual orifices spaced an average of 0.1-2 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.
  • a further embodiment of the present invention provides for introducing gases into a reactor by flowing a purge gas from a first gas source orifice array disposed a first distance from a surface of a work-piece along an axis defined by gas flow from the first gas source orifice array to the surface of the work-piece while flowing a first reactive precursor into the reactor from a second gas source orifice array separate from the first gas source orifice array and disposed at a second distance from the surface of a work-piece along the axis defined by gas flow, said second distance being between said first distance.
  • the flow of the first reactive precursor from the second gas source array may be stopped and the purge gas then flowed into the reactor from one or more of the first gas source orifice array and the second gas source orifice array.
  • a second reactive precursor may be flowed into the reactor through the first gas source orifice array while flowing the purge gas into the reactor through the second gas source orifice array.
  • the flow of the second reactive precursor from the first gas source array may be stopped, and unused portions of the second reactive precursor evacuated while flowing the purge gas into the reactor from one or more of the first gas source orifice array and the second gas source orifice array. This cycle may be repeated as needed to form a film on a substrate within the reactor.
  • the invention is also useful in CVD and/or pulsed-CVD operations as discussed further below.
  • FIG. 1 shows an example of undesired gas recirculation and mixing which can occur when a conventional showerhead having gas passageways with exit holes in a single plane is used;
  • FIG. 2 shows an example of a showerhead configured in accordance with an embodiment of the present invention so as to prevent or reduce such undesired gas recirculation and mixing by displacing gas passageway exit holes into separate planes displaced from one another along an axis defined by the gas injection axis;
  • FIG. 3 shows an example of a showerhead configured in accordance with an embodiment of the present invention in which a radial spoke gas injection conduit is displaced beneath a planar gas distribution plate;
  • FIG. 4 shows an example of an ALD reactor having with a gas distribution system configured in accordance with an embodiment of the present invention
  • FIG. 5 illustrates a variation of the ALD system shown in FIG. 4 in which multiple wafers are processed in a single rector.
  • gas distribution systems for ALD, CVD and/or other processing systems in which vapor phase precursors or other gases (e.g., inert carrier gases) are transported from upstream sources to a reaction space above a substrate.
  • gases e.g., inert carrier gases
  • the present distribution systems are composed of two or more physically separated gas source orifices. That is, embodiments of the present invention provide gas source orifices at different displacements from a surface of a substrate along an axis of the gas pathway from the orifices to that surface.
  • the gas source orifices (which may be supplied by a common manifold configured to provide gases or precursors separately to each orifice) are separated from one another along an axis defining a path for the gasses to travel between the orifices and the substrate.
  • Embodiments of the present invention provide both physical and thermal separation of reactive precursors until they come into close proximity to the substrate. This not only avoids undesired reactions along the faceplate of the showerhead, it also permits the individual precursors to be delivered at their individual optimum temperatures. Furthermore, systems configured in accordance with the present invention provide manufacturers greater flexibility in designing gas flow manifolds for each precursor, independent from the geometrical constraints of the other.
  • FIG. 2 an example of a gas distribution system 28 configured in accordance with an embodiment of the present invention is illustrated.
  • this illustration depicts a gas distribution system with two manifolds (or gas source orifice arrays as they are sometimes termed herein), the present invention is not limited to such systems. Any number of such manifolds can be used.
  • the gas distributions systems will have multiple gas orifices disposed in a single plane (such as is the case for the system illustrated in FIG. 1 ) and in addition will have other gas orifices disposed in a different plane (as described below).
  • three or more such orifice arrays separately disposed from one another along an axis of gas injection may be provided.
  • the depiction of a system employing two such arrays displaced from one another is meant only to illustrate the concepts embodied in the present invention and should not be viewed as limiting the scope of the invention to such arrangements.
  • FIG. 2 then is a cut away view of a gas distribution system 28 having two individual gas manifolds generally indicated at 30 and 32 .
  • the upper manifold 30 includes gas passageways 34 a - 34 d , which provide means for the gas in manifold 30 to exit via holes 36 a - 36 d in the faceplate 38 of a distribution plate 40 .
  • the lower manifold 32 includes a generally cylindrical gas passageway 40 , which provide means for the gas in manifold 32 to exit via holes 44 a - 44 c.
  • the individual manifolds are not limited to these illustrated configurations and, in general, any convenient configurations may be used to achieve desired gas distribution profiles within a reaction space proximate to a substrate.
  • planar, curved, corrugated, cylindrical or other manifolds/distribution devices may be employed.
  • the faceplate 38 of upper manifold 30 need not be a flat (or relatively flat) surface as is shown in the illustration. Instead, faceplate 38 may have a corrugated or even saw tooth profile. Further, regardless of whether the faceplate 38 is flat or not, it need not necessarily be planar. Instead, various embodiments of the present invention may find particular application for a curved (e.g., relatively concave or relatively convex) faceplate 38 .
  • the distance between the lower manifold 32 and the upper manifold 30 may be adjustable.
  • the lower manifold 32 may be suspended beneath the upper manifold 30 by one or more telescoping (e.g., pneumatic or hydraulic) supports which operate under the control of a controller so as to set the lower manifold at a desired distance from the faceplate 38 of the upper manifold 30 .
  • the supports or other means of adjusting the separation distance between the manifolds may be manually configurable. Different CVD and/or ALD processes may require such different spacings between the manifolds in order to achieve desired deposition characteristics on substrates.
  • the optimal distance between the upper and lower manifolds may be dependent on the characteristics of the individual orifices present therein.
  • the present invention encompasses the use of different types of orifices in either or both of the manifolds.
  • Some orifices may be substantially cylindrical in cross-section, while others may be more funnel-like in cross-section so as to provide a wider dispersal of the gas exiting the orifice than might otherwise be achieved using orifices having a cylindrical cross-section. So too may the number of holes in each individual manifold be adjusted to provide a desired gas distribution profile at the surface of the work-piece undergoing processing.
  • manifold 32 is displaced from manifold 30 along an axis (Z) in the direction of gas injection from the respective holes of each manifold.
  • Z axis
  • the recirculation of the different precursor gases from the different manifolds does not lead to any undesired mixing of the precursors along the faceplate 38 of distribution plate 40 .
  • This improves the film deposition characteristics of systems employing system 28 over those which make use of conventional showerheads.
  • FIG. 3 shows an isometric view of the gas distribution system 28 .
  • the upper manifold is composed of a relatively flat distribution plate 40 with multiple through-holes 36 in faceplate 38 to allow precursor vapors and purge gases to enter the reactor (not shown).
  • the lower manifold 32 is configured as an array of radial tubes 48 joined to a central inlet 50 .
  • the tubes 48 have a series of outlet holes (not shown in detail in this drawing) to provide for uniform delivery of precursor and purge gases.
  • the tubes 48 may be organized as one or more conduits distributed axi-symetrically with respect to a radius of the planar distribution plate 40 .
  • Manifold 30 distributes precursor A towards substrate 54 through holes (not shown in this view) in the faceplate 38
  • manifold 32 distributes precursor B towards substrate 54 through holes (also not shown in this view) in radial arms 48 .
  • the radial arms are fed via central inlet 50 .
  • Manifold 32 is displaced below the faceplate 38 of manifold 30 along the axis of gas injection towards the substrate 54 (the Z axis) by a distance “d”.
  • the lower manifold 48 need not have a radial spoke configuration as depicted in the illustration.
  • the lower manifold may be a point source (i.e., a gas orifice having a substantially circular or other cross-section).
  • the lower manifold 48 could be a planar (or relatively planar) source, a source having a concave cross-section, or a radial spoke configuration with spokes of varying lengths.
  • the lower manifold 48 may be relatively smaller or larger than as depicted in the illustration. That is, the lower manifold 48 may have a diameter equal to or greater than the substrate 54 . or, the lower manifold may have a diameter smaller than that of the substrate, as shown.
  • precursor B need not necessarily be fed to the lower manifold 32 via a single, central supply line. Instead, some configurations may have precursor B being fed to the orifice array through a lateral line or other, non central axial-symmetric feed line or lines. The details of such gas feed lines from an external gas supply source are not critical to the present invention.
  • the faceplate 38 of manifold 30 is located a distance “L” from the surface of substrate 54 on which deposition is to occur.
  • “L” will be an average distance of an intended plane defined by the faceplate 38 from the surface of the substrate 54 and individual distances of any point on the faceplate 38 will reside at a distance L ⁇ 1 from said surface, owing to nonuniformities in the faceplate surface and the surface of the substrate 54 .
  • the holes in faceplate 38 through which precursor A gases will be introduced to reactor 52 will spaced an average of 0.2-0.8 times L ⁇ 1 from one another.
  • the holes in manifold 32 may be spaced an average of 0.1-2 times L ⁇ 1 from one another. Note that this latter spacing may be achieved through selected positioning of the various radial arms 48 of manifold 32 .
  • the distance from the lower manifold 32 to the surface of the substrate 54 will be some fraction of L. In various embodiments of the invention this distance may be 0.3-0.9 * L, and in one embodiment that was reduced to practice was 0.7L. Typically, L will be approximately one inch.
  • manifold 30 will be flowing purge gas while manifold 32 is flowing reactive precursor B.
  • both manifolds 30 and 32 will flow purge gas to assist in removing any unreacted precursor from the reactor 52 .
  • Unused precursors and purge gases are exhausted from reactor 52 via a pumping arrangement (not shown).
  • precursor A will be introduced through manifold 30 and purge gas will flow through manifold 32 .
  • both manifolds 30 and 32 will flow purge gas to assist in removing any unreacted precursor.
  • the flows of precursor and purge gas may be alternated in this fashion throughout the deposition process to allow the substrate 54 to be sequentially exposed to each of the precursors without allowing the precursors to mix in the gas phase.
  • the above-described process allows for uniform delivery of precursor vapor by introducing one of the reactant species through a flat plate with a plurality of through-holes while the second reactant species is introduced through a set of conduits radiating outward from a centrally located inlet.
  • the conduits are situated such that they are between the flat plate and the substrate. This provides delivery of both reactants while maintaining thermal and physical isolation between the chemicals.
  • one of the ALD half-reactions will be soft saturating while the other is not.
  • the precursor associated with the soft saturating reaction may require more uniform distribution, as may be achieved through introduction via the upper, relatively planar gas orifice array.
  • the precursor associated with the strongly saturating half-reaction in the ALD process may be relatively insensitive to distribution via a nonuniform gas orifice array such as the lower manifold. This may not always be the case, however, inasmuch as relative gas flow rates must also be taken into consideration.
  • a first precursor and carrier gas may be introduced continually through manifold 30 and the second precursor introduced in a pulsed fashion through the lower manifold 32 .
  • the precursor introduced via the lower manifold will be the one which has a dominant surface reaction during the CVD.
  • the unused precursors and purge gases are exhausted from reactor 52 while flowing purge gas through one or both of the manifolds.
  • the two manifolds may be operated so as to variously flow reactive precursors, precursors and carrier gases, and/or purge gas at various times in an ALD, CVD or other process so as to achieve a desired deposition on a substrate within the reactor.
  • a precursor is introduced via the upper manifold (with or without a carrier gas)
  • the lower manifold may be used to introduce a second precursor (with or without its own carrier gas) or purge gas and vice-versa.
  • a gas distribution system composed of distinct, physically separated source orifices to supply precursor vapors and inert gases to a substrate.
  • the distinct gas sources are oriented such that one orifice is located between the substrate and the other orifice. This prevents gas recirculation that is often observed with conventional showerheads, when the precursor vapors and inert gases are injected through adjacent orifices, and prevents premature reactions that are often observed when the precursors and purge gases are introduced through a single orifice.
  • gas distribution systems configured in accordance with the present invention do not provide a gas recirculation zone between the outlet orifices of the separate gas manifolds. This improves purging and can minimize gas-phase mixing and turbulence, both of which can lead to unwanted film deposition or particle formation

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
US11/278,700 2006-04-05 2006-04-05 Method and apparatus for providing uniform gas delivery to a reactor Abandoned US20070234956A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/278,700 US20070234956A1 (en) 2006-04-05 2006-04-05 Method and apparatus for providing uniform gas delivery to a reactor
KR1020070031718A KR101373828B1 (ko) 2006-04-05 2007-03-30 균일한 가스 전달을 반응기에 제공하기 위한 방법 및 장치
EP07251447A EP1842938A3 (en) 2006-04-05 2007-03-30 Method and apparatus for providing uniform gas delivery to a reactor
JP2007099449A JP2007277723A (ja) 2006-04-05 2007-04-05 反応炉に均一な気体運搬を行う方法および装置
CNA2007100898274A CN101050524A (zh) 2006-04-05 2007-04-05 用于向反应器输送均匀气体的方法和设备
US12/553,917 US7981472B2 (en) 2006-04-05 2009-09-03 Methods of providing uniform gas delivery to a reactor
US13/168,792 US20110253046A1 (en) 2006-04-05 2011-06-24 Apparatus for providing uniform gas delivery to a reactor

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Application Number Priority Date Filing Date Title
US11/278,700 US20070234956A1 (en) 2006-04-05 2006-04-05 Method and apparatus for providing uniform gas delivery to a reactor

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US12/553,917 Expired - Fee Related US7981472B2 (en) 2006-04-05 2009-09-03 Methods of providing uniform gas delivery to a reactor
US13/168,792 Abandoned US20110253046A1 (en) 2006-04-05 2011-06-24 Apparatus for providing uniform gas delivery to a reactor

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US20230212747A1 (en) * 2021-12-31 2023-07-06 Applied Materials, Inc. Apparatus and Methods for Self-Assembled Monolayer (SAM) Deposition in Semiconductor Equipment

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KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
EP2481833A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US11326255B2 (en) 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US9334566B2 (en) * 2013-11-25 2016-05-10 Lam Research Corporation Multi-tray ballast vapor draw systems
US10082461B2 (en) * 2014-07-29 2018-09-25 Nanometrics Incorporated Optical metrology with purged reference chip
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US7981472B2 (en) 2011-07-19
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