KR101373828B1 - 균일한 가스 전달을 반응기에 제공하기 위한 방법 및 장치 - Google Patents

균일한 가스 전달을 반응기에 제공하기 위한 방법 및 장치 Download PDF

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KR101373828B1
KR101373828B1 KR1020070031718A KR20070031718A KR101373828B1 KR 101373828 B1 KR101373828 B1 KR 101373828B1 KR 1020070031718 A KR1020070031718 A KR 1020070031718A KR 20070031718 A KR20070031718 A KR 20070031718A KR 101373828 B1 KR101373828 B1 KR 101373828B1
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gas
delete delete
reactor
orifice arrangement
gas supply
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KR20070100120A (ko
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제레미 제이. 달톤
엠. 지아울 카림
애나 알. 론더건
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아익스트론 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
KR1020070031718A 2006-04-05 2007-03-30 균일한 가스 전달을 반응기에 제공하기 위한 방법 및 장치 Active KR101373828B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/278,700 2006-04-05
US11/278,700 US20070234956A1 (en) 2006-04-05 2006-04-05 Method and apparatus for providing uniform gas delivery to a reactor

Publications (2)

Publication Number Publication Date
KR20070100120A KR20070100120A (ko) 2007-10-10
KR101373828B1 true KR101373828B1 (ko) 2014-03-11

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KR1020070031718A Active KR101373828B1 (ko) 2006-04-05 2007-03-30 균일한 가스 전달을 반응기에 제공하기 위한 방법 및 장치

Country Status (5)

Country Link
US (3) US20070234956A1 (enExample)
EP (1) EP1842938A3 (enExample)
JP (1) JP2007277723A (enExample)
KR (1) KR101373828B1 (enExample)
CN (1) CN101050524A (enExample)

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CN103352206B (zh) * 2008-12-04 2015-09-16 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
EP2481833A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US11326255B2 (en) 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US9334566B2 (en) * 2013-11-25 2016-05-10 Lam Research Corporation Multi-tray ballast vapor draw systems
US10082461B2 (en) * 2014-07-29 2018-09-25 Nanometrics Incorporated Optical metrology with purged reference chip
US10451542B2 (en) 2017-12-05 2019-10-22 Nanometrics Incorporated Local purge within metrology and inspection systems
JP6637095B2 (ja) * 2018-03-22 2020-01-29 プラサド ナーハー ガジル セラミック薄膜の低温堆積方法
FI128427B (en) * 2018-04-12 2020-05-15 Beneq Oy Nozzle head and device
FI129731B (en) * 2018-04-16 2022-08-15 Beneq Oy Nozzle head, apparatus and method
CN108950546B (zh) * 2018-10-08 2023-06-02 福建工程学院 一种预置激光熔覆保护气充盈装置
DE102019119019A1 (de) 2019-07-12 2021-01-14 Aixtron Se Gaseinlassorgan für einen CVD-Reaktor
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
US12065738B2 (en) 2021-10-22 2024-08-20 Uchicago Argonne, Llc Method of making thin films of sodium fluorides and their derivatives by ALD
US12559840B2 (en) * 2021-12-31 2026-02-24 Applied Materials Inc. Apparatus and methods for self-assembled monolayer (SAM) deposition in semiconductor equipment
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings
CN118007093B (zh) * 2024-02-19 2024-07-26 江苏协鑫特种材料科技有限公司 一种用于碳化硅涂层生产的沉积炉进气结构

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Also Published As

Publication number Publication date
US20110253046A1 (en) 2011-10-20
US20070234956A1 (en) 2007-10-11
JP2007277723A (ja) 2007-10-25
EP1842938A2 (en) 2007-10-10
US20090324829A1 (en) 2009-12-31
US7981472B2 (en) 2011-07-19
CN101050524A (zh) 2007-10-10
EP1842938A3 (en) 2008-06-18
KR20070100120A (ko) 2007-10-10

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