CN101050524A - 用于向反应器输送均匀气体的方法和设备 - Google Patents

用于向反应器输送均匀气体的方法和设备 Download PDF

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Publication number
CN101050524A
CN101050524A CNA2007100898274A CN200710089827A CN101050524A CN 101050524 A CN101050524 A CN 101050524A CN A2007100898274 A CNA2007100898274 A CN A2007100898274A CN 200710089827 A CN200710089827 A CN 200710089827A CN 101050524 A CN101050524 A CN 101050524A
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CN
China
Prior art keywords
gas
array
gas source
reactor
distance
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Pending
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CNA2007100898274A
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English (en)
Chinese (zh)
Inventor
J·J·多尔顿
M·Z·卡里姆
A·R·隆德甘
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Genus Inc
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Genus Inc
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Publication of CN101050524A publication Critical patent/CN101050524A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
CNA2007100898274A 2006-04-05 2007-04-05 用于向反应器输送均匀气体的方法和设备 Pending CN101050524A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/278,700 2006-04-05
US11/278,700 US20070234956A1 (en) 2006-04-05 2006-04-05 Method and apparatus for providing uniform gas delivery to a reactor

Publications (1)

Publication Number Publication Date
CN101050524A true CN101050524A (zh) 2007-10-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100898274A Pending CN101050524A (zh) 2006-04-05 2007-04-05 用于向反应器输送均匀气体的方法和设备

Country Status (5)

Country Link
US (3) US20070234956A1 (enExample)
EP (1) EP1842938A3 (enExample)
JP (1) JP2007277723A (enExample)
KR (1) KR101373828B1 (enExample)
CN (1) CN101050524A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102308368A (zh) * 2008-12-04 2012-01-04 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
CN104651806A (zh) * 2013-11-25 2015-05-27 朗姆研究公司 多托盘压载抽蒸气系统
CN112292480A (zh) * 2018-04-12 2021-01-29 Beneq有限公司 喷嘴头和设备
CN112313363A (zh) * 2018-04-16 2021-02-02 Beneq有限公司 喷嘴头和设备

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US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US11326255B2 (en) 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US10082461B2 (en) * 2014-07-29 2018-09-25 Nanometrics Incorporated Optical metrology with purged reference chip
US10451542B2 (en) 2017-12-05 2019-10-22 Nanometrics Incorporated Local purge within metrology and inspection systems
JP6637095B2 (ja) * 2018-03-22 2020-01-29 プラサド ナーハー ガジル セラミック薄膜の低温堆積方法
CN108950546B (zh) * 2018-10-08 2023-06-02 福建工程学院 一种预置激光熔覆保护气充盈装置
DE102019119019A1 (de) 2019-07-12 2021-01-14 Aixtron Se Gaseinlassorgan für einen CVD-Reaktor
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
US12065738B2 (en) 2021-10-22 2024-08-20 Uchicago Argonne, Llc Method of making thin films of sodium fluorides and their derivatives by ALD
US20230212747A1 (en) * 2021-12-31 2023-07-06 Applied Materials, Inc. Apparatus and Methods for Self-Assembled Monolayer (SAM) Deposition in Semiconductor Equipment
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings
CN118007093B (zh) * 2024-02-19 2024-07-26 江苏协鑫特种材料科技有限公司 一种用于碳化硅涂层生产的沉积炉进气结构

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102308368A (zh) * 2008-12-04 2012-01-04 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
CN102308368B (zh) * 2008-12-04 2014-02-12 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
CN104651806A (zh) * 2013-11-25 2015-05-27 朗姆研究公司 多托盘压载抽蒸气系统
CN104651806B (zh) * 2013-11-25 2018-11-02 朗姆研究公司 多托盘压载抽蒸气系统
CN112292480A (zh) * 2018-04-12 2021-01-29 Beneq有限公司 喷嘴头和设备
CN112292480B (zh) * 2018-04-12 2023-03-10 Beneq有限公司 喷嘴头和设备
CN112313363A (zh) * 2018-04-16 2021-02-02 Beneq有限公司 喷嘴头和设备
CN112313363B (zh) * 2018-04-16 2023-07-11 青岛四方思锐智能技术有限公司 喷嘴头和设备

Also Published As

Publication number Publication date
JP2007277723A (ja) 2007-10-25
US20090324829A1 (en) 2009-12-31
KR20070100120A (ko) 2007-10-10
US20070234956A1 (en) 2007-10-11
US20110253046A1 (en) 2011-10-20
US7981472B2 (en) 2011-07-19
EP1842938A2 (en) 2007-10-10
KR101373828B1 (ko) 2014-03-11
EP1842938A3 (en) 2008-06-18

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