CN112292480A - 喷嘴头和设备 - Google Patents
喷嘴头和设备 Download PDFInfo
- Publication number
- CN112292480A CN112292480A CN201980038536.3A CN201980038536A CN112292480A CN 112292480 A CN112292480 A CN 112292480A CN 201980038536 A CN201980038536 A CN 201980038536A CN 112292480 A CN112292480 A CN 112292480A
- Authority
- CN
- China
- Prior art keywords
- nozzle
- tube
- gas
- nozzles
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20185351 | 2018-04-12 | ||
FI20185351A FI128427B (en) | 2018-04-12 | 2018-04-12 | Nozzle head and device |
PCT/FI2019/050294 WO2019197727A1 (en) | 2018-04-12 | 2019-04-11 | Nozzle head and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112292480A true CN112292480A (zh) | 2021-01-29 |
CN112292480B CN112292480B (zh) | 2023-03-10 |
Family
ID=68163119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980038536.3A Active CN112292480B (zh) | 2018-04-12 | 2019-04-11 | 喷嘴头和设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11214866B2 (zh) |
EP (1) | EP3775316A4 (zh) |
CN (1) | CN112292480B (zh) |
FI (1) | FI128427B (zh) |
WO (1) | WO2019197727A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108291303B (zh) * | 2015-12-17 | 2020-07-21 | 倍耐克有限公司 | 涂覆前体喷嘴和喷嘴头 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011298A1 (en) * | 2004-07-15 | 2006-01-19 | Ji-Eun Lim | Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates |
CN101050524A (zh) * | 2006-04-05 | 2007-10-10 | 杰努斯公司 | 用于向反应器输送均匀气体的方法和设备 |
CN101578391A (zh) * | 2007-01-08 | 2009-11-11 | 伊斯曼柯达公司 | 沉积系统及方法 |
US20110086167A1 (en) * | 2009-07-31 | 2011-04-14 | E. I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
KR20120025643A (ko) * | 2010-09-06 | 2012-03-16 | 엘아이지에이디피 주식회사 | 화학기상증착장치의 가스공급유닛 및 이의 제조 방법 |
CN103108984A (zh) * | 2010-08-30 | 2013-05-15 | Beneq有限公司 | 喷嘴头和装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9712400D0 (en) * | 1997-06-16 | 1997-08-13 | Trikon Equip Ltd | Shower head |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7413982B2 (en) * | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
KR101125086B1 (ko) * | 2007-04-17 | 2012-03-21 | 가부시키가이샤 알박 | 성막장치 |
US20090081360A1 (en) | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Oled display encapsulation with the optical property |
WO2010101369A2 (ko) * | 2009-03-03 | 2010-09-10 | 주성엔지니어링㈜ | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 |
KR101064210B1 (ko) * | 2009-06-01 | 2011-09-14 | 한국생산기술연구원 | 막증착 진공장비용 샤워헤드 |
US20110023775A1 (en) | 2009-07-31 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
US8318249B2 (en) * | 2009-11-20 | 2012-11-27 | Eastman Kodak Company | Method for selective deposition and devices |
CN102424956B (zh) * | 2011-12-02 | 2013-07-10 | 彭继忠 | 用于金属有机化合物化学气相沉积设备的喷淋装置 |
US9677176B2 (en) * | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
CN105839079B (zh) | 2016-06-07 | 2019-05-14 | 江苏微导纳米装备科技有限公司 | 真空镀膜装置 |
-
2018
- 2018-04-12 FI FI20185351A patent/FI128427B/en active IP Right Grant
-
2019
- 2019-04-11 CN CN201980038536.3A patent/CN112292480B/zh active Active
- 2019-04-11 WO PCT/FI2019/050294 patent/WO2019197727A1/en active Application Filing
- 2019-04-11 EP EP19784418.6A patent/EP3775316A4/en active Pending
-
2020
- 2020-10-09 US US17/066,724 patent/US11214866B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011298A1 (en) * | 2004-07-15 | 2006-01-19 | Ji-Eun Lim | Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates |
CN101050524A (zh) * | 2006-04-05 | 2007-10-10 | 杰努斯公司 | 用于向反应器输送均匀气体的方法和设备 |
CN101578391A (zh) * | 2007-01-08 | 2009-11-11 | 伊斯曼柯达公司 | 沉积系统及方法 |
US20110086167A1 (en) * | 2009-07-31 | 2011-04-14 | E. I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
CN103108984A (zh) * | 2010-08-30 | 2013-05-15 | Beneq有限公司 | 喷嘴头和装置 |
KR20120025643A (ko) * | 2010-09-06 | 2012-03-16 | 엘아이지에이디피 주식회사 | 화학기상증착장치의 가스공급유닛 및 이의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20210025057A1 (en) | 2021-01-28 |
EP3775316A1 (en) | 2021-02-17 |
WO2019197727A1 (en) | 2019-10-17 |
CN112292480B (zh) | 2023-03-10 |
EP3775316A4 (en) | 2021-06-23 |
US11214866B2 (en) | 2022-01-04 |
FI128427B (en) | 2020-05-15 |
FI20185351A1 (en) | 2019-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Espoo, Finland Applicant after: BENEQ Group Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220824 Address after: Espoo, Finland Applicant after: BENEQ OY Address before: Espoo, Finland Applicant before: BENEQ Group Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230509 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |