US20070175104A1 - Polishing slurry for silicon oxide, additive liquid and polishing method - Google Patents

Polishing slurry for silicon oxide, additive liquid and polishing method Download PDF

Info

Publication number
US20070175104A1
US20070175104A1 US11/594,988 US59498806A US2007175104A1 US 20070175104 A1 US20070175104 A1 US 20070175104A1 US 59498806 A US59498806 A US 59498806A US 2007175104 A1 US2007175104 A1 US 2007175104A1
Authority
US
United States
Prior art keywords
polishing
group
silicon oxide
polishing slurry
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/594,988
Other languages
English (en)
Inventor
Masaya Nishiyama
Kazuhiro Enomoto
Masato Fukasawa
Toshiaki Akutsu
Yuuto Otsuki
Toranosuke Ashizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Assigned to HITACHI CHEMICAL CO., LTD. reassignment HITACHI CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AKUTSU, TOSHIAKI, ASHIZAWA, TORANOSUKE, ENOMOTO, KAZUHIRO, FUKASAWA, MASATO, NISHIYAMA, MASAYA, OOTSUKI, YUUTO
Publication of US20070175104A1 publication Critical patent/US20070175104A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • the invention relates to a polishing slurry preferably used in the planarization process for dielectrics on substrate surfaces, which is a manufacturing technique for semiconductor devices, and particularly relates to a polishing slurry for silicon oxide on polysilicon, an additive liquid used in the polishing slurry, and a polishing method using the polishing slurry.
  • CMP Chemical Mechanical Polishing
  • a fumed silica polishing slurry, colloidal silica polishing slurry, and cerium oxide polishing slurry have been generally studied.
  • inorganic dielectric layers include a silicon oxide dielectric formed by a plasma-CVD method, a low-pressure-CVD method, or other method.
  • Fumed silica is produced from silicon tetrachloride by heat decomposition or other method, and the particles are grown to be used as an abrasive in a polishing slurry.
  • colloidal silica used to be made from water glass but alkali components derived from water glass remains in colloidal silica, thus it contains too much metal impurities for semiconductor applications.
  • a method for manufacturing colloidal silica from alkoxide was established, which has allowed the manufacture of high purity products, and commercialization of colloidal silica which can be used as an abrasive for semiconductors.
  • the pH of the slurry is often adjusted to alkaline for increasing the polishing rate.
  • cerium oxide particles have lower hardness and are less prone to give scratches on the polishing surface in comparison with silica particles or alumina particles. Further, since cerium oxide polishes silicon oxide at a high polishing rate, the applicable pH range is not particularly limited.
  • a CMP polishing slurry using a high purity cerium oxide abrasive is used for semiconductor applications. The technique is, for example, disclosed in Japanese Patent Application Laid-Open No. 10-106994. Another known technique is to add an additive to a cerium oxide polishing slurry for controlling the polishing rate thereof to increase global flatness. The technique is disclosed, for example, in Japanese Patent Application Laid-Open No. 8-22970.
  • shallow trench isolation is used for isolating devices in an integrated circuit.
  • CMP is used for removing the surplus parts of a silicon oxide film formed on the substrate.
  • a stopper film which is polished at a low rate is formed under the silicon oxide film.
  • the stopper film is typically made of silicon nitride, and the polishing rate ratio between the silicon oxide film and the stopper film is preferably large.
  • a stopper may be used, for example, in formation of a plug or the like wherein the surplus parts of a film must be removed by CMP for planarization.
  • Silicon nitride has been commercialized as a stopper for shallow trench isolation because it has high hardness and is readily controllable in polishing rate. Stoppers other than silicon nitride may be possible as long as they are films controllable in their polishing rate. For example, a barrier metal for Cu wiring also serves as a stopper in CMP. In addition, polysilicon (polycrystalline silicon) will be usable as a stopper if the polishing rate thereof is sufficiently controllable.
  • Polysilicon which is used as a conductive material for a transistor gate or the like, can be used in different applications from silicon nitride if a CMP technique for using polysilicon as a stopper is established.
  • a CMP technique for using polysilicon as a stopper is established.
  • the object of the invention is to provide a polishing slurry for silicon oxide on polysilicon which achieves a sufficiently large polishing rate ratio between silicon oxide and polysilicon for making polysilicon applicable as a stopper, and a polishing method using the same for polishing a semiconductor substrate or the like.
  • the invention relates to [1] a polishing slurry for silicon oxide for polishing a silicon oxide film on polysilicon, which contains an abrasive, a polysilicon polishing inhibitor, and water.
  • the invention relates to [2] the polishing slurry for silicon oxide according to [1], wherein the ratio of the polishing rate for silicon oxide to that for polysilicon is 10 or more.
  • the invention relates to [3] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor is a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ⁇ -substituted derivatives thereof.
  • the polysilicon polishing inhibitor is a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ⁇ -substituted derivatives thereof.
  • the invention relates to [4] the polishing slurry for silicon oxide according to [3], wherein the water-soluble polymer is a polymer or copolymer containing at least one selected from the group consisting of a polymerizable monomer represented by the following formula (I) and a polymerizable monomer represented by the following general formula (II).
  • the water-soluble polymer is a polymer or copolymer containing at least one selected from the group consisting of a polymerizable monomer represented by the following formula (I) and a polymerizable monomer represented by the following general formula (II).
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 2 and R 3 each independently represents a hydrogen atom, alkyl chain of C 1 to C 18 , methylol group, or acetyl group with the proviso that the case where both of them simultaneously represent a hydrogen atom is excluded.
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 4 represents a morpholino group, thiomorpholino group, pyrrolidino group, or piperidino group.
  • the invention relates to [5] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor is polyethylene glycol.
  • the invention relates to [6] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor is an oxyethylene adduct of a acetylene-based diol.
  • the invention relates to [7] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor is at least either of the compound represented by the following general formula (III) and the compound and represented by the following general formula (IV).
  • R 1 represents a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 2 represents a substituted or unsubstituted alkyl group having 4 to 10 carbon atoms.
  • R 3 to R 6 each independently represent a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 7 and R 8 each independently represent a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms
  • m and n each independently represents 0 or a positive number.
  • the invention relates to [8] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor is an alkoxylated linear aliphatic alcohol.
  • the invention relates to [9] the polishing slurry for silicon oxide according to any of [1] through [7], which contains two or more types of the polysilicon polishing inhibitor.
  • the invention relates to [10] the polishing slurry for silicon oxide according to [9], wherein the polysilicon polishing inhibitor includes two or more compounds selected from the
  • the invention relates to [11] the polishing slurry for silicon oxide according to any of [3] through [10], wherein the content of the polysilicon polishing inhibitor is 0.005% by mass or more and 2% by mass or less.
  • the invention relates to [12] the polishing slurry for silicon oxide according to any of [3] through [11], wherein the pH is 5.0 to 8.0.
  • the invention relates to [13] the polishing slurry for silicon oxide according to any of [1] through [12], which contains at least one selected from polyacrylic acid, polyacrylate, and a copolymer containing acrylate.
  • the invention relates to [14] the polishing slurry for silicon oxide according to any of [1] through [13], wherein the abrasive contains cerium oxide.
  • the invention relates to [15] the polishing slurry for silicon oxide according to [1] or [2], wherein the polysilicon polishing inhibitor contains polyvinyl pyrrolidone or a copolymer containing vinyl pyrrolidone.
  • the invention relates to [16] the polishing slurry for silicon oxide according to [15], wherein the content of the polysilicon polishing inhibitor is 0.005 to 5% by mass.
  • the invention relates to [17] the polishing slurry for silicon oxide according to [15] or [16], wherein the pH is 5.0 to 12.0.
  • the invention relates to [18] the polishing slurry for silicon oxide according to any of [15] through [17], which contains at least one selected from polyacrylic acid, polyacrylate, and a copolymer containing acrylate.
  • the invention relates to [19] the polishing slurry for silicon oxide according to any of [15] through [18], wherein the abrasive contains cerium oxide.
  • the invention relates to [20] the polishing slurry for silicon oxide according to any of [1] through [19], wherein the content of at least one selected from polyacrylic acid, polyacrylate, and a copolymer containing acrylate is 0.01 to 5% by mass.
  • the invention relates to [21] the polishing slurry for silicon oxide according to any of [1] through [20], wherein the abrasive contains silicon oxide.
  • the invention relates to [22] a method for polishing a semiconductor substrate using the polishing slurry for silicon oxide according to any of [1] through [21].
  • the invention relates to [23] an additive liquid for polishing slurry used in a polishing slurry for polishing a silicon oxide film on polysilicon, which contains a polysilicon polishing inhibitor and water.
  • the invention relates to [24] the additive liquid for polishing slurry according to [23], wherein the polysilicon polishing inhibitor is a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ⁇ -substituted derivatives thereof.
  • the invention relates to [25] the additive liquid for polishing slurry according to [24], wherein the water-soluble polymer is a polymer or copolymer containing at least one selected from the group consisting of a polymerizable monomer represented by the following formula (I) and apolymerizable monomer represented by the following general formula (II).
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 2 and R 3 each independently represents a hydrogen atom, alkyl chain of C 1 to C 18 , methylol group, or acetyl group with the proviso that the case where both of them simultaneously represent a hydrogen atom is excluded.
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 4 represents a morpholino group, thiomorpholino group, pyrrolidino group, or piperidino group.
  • the invention relates to [26] the additive liquid for polishing slurry according to [23], wherein the polysilicon polishing inhibitor is polyethylene glycol.
  • the invention relates to [27] the additive liquid for polishing slurry according to [23], wherein the polysilicon polishing inhibitor is an oxyethylene adduct of an acetylene-based diol.
  • the invention relates to [28] the additive liquid for polishing slurry according to [23], wherein the polysilicon polishing inhibitor is at least either of the compound represented by the following general formula (III) and the compound and represented by the following general formula (IV).
  • R 1 represents a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 2 represents a substituted or unsubstituted alkyl group having 4 to 10 carbon atoms.
  • R 3 to R 6 each independently represent a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 7 and R 8 each independently represent a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms
  • m and n each independently represents 0 or a positive number.
  • the invention relates to [29] the additive liquid for polishing slurry according to [23], wherein the polysilicon polishing inhibitor is an alkoxylated linear aliphatic alcohol.
  • the invention relates to [30] the additive liquid for polishing slurry according to [23], which contains two or more types of the polysilicon polishing inhibitor.
  • the invention relates to [31] the additive liquid for polishing slurry according to [30], wherein the polysilicon polishing inhibitor includes two or more compounds selected from the water-soluble polymer, polyethylene glycol, an oxyethylene adduct of an acetylene-based diol, a compound represented by the general formula (III), a compound represented by the general formula (IV), and an alkoxylated linear aliphatic alcohol.
  • the polysilicon polishing inhibitor includes two or more compounds selected from the water-soluble polymer, polyethylene glycol, an oxyethylene adduct of an acetylene-based diol, a compound represented by the general formula (III), a compound represented by the general formula (IV), and an alkoxylated linear aliphatic alcohol.
  • the invention relates to [32] the additive liquid for polishing slurry according to any of [23] through [31], which further contains at least one selected from polyacrylic acid, polyacrylate, and a copolymer containing acrylate.
  • the invention relates to [33] a polishing method using the polishing slurry for silicon oxide according to any of [1] through [21], wherein the object to be polished is held against a polishing pad with the surface thereof to be polished facing the polishing pad, and polished by being slid relative to the polishing pad while the polishing slurry is supplied between the polishing pad and the surface to be polished.
  • the invention provides a polishing slurry and a polishing method which are capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in a CMP technique in the manufacturing process of a semiconductor in which a silicon oxide film is polished.
  • a polishing slurry comprising an abrasive, water, and a inhibitor for inhibiting polishing of a polysilicon film is capable of keeping a high polishing rate for a silicon oxide film and a low polishing rate for a polysilicon film, and thereby achieving a high polishing rate ratio (selective ratio) between them.
  • the present invention has been accomplished. It has been also found that the selective ratio is increased by adjusting the pH of the polishing slurry.
  • the abrasive used in the invention may be cerium oxide, silicon oxide, or the like, and is preferably cerium oxide.
  • Cerium oxide particles are not limited as to their manufacturing method, but the average primary particle diameter of cerium oxide is preferable 5 nm or more and 300 nm or less. This is because, regarding a cerium oxide polishing slurry used for polishing of a silicon oxide film formed by a TEOS-CVD method or the like, cerium oxide having a larger primary particle diameter and less crystal distortion or higher crystallinity allows faster polishing, but tends to give polishing scratches.
  • the term primary particles refers to particles corresponding to crystallites surrounded by grain boundaries which are measured and observed with a SEM (scanning electron microscope).
  • the method for preparing cerium oxide powder may be sintering of a cerium compound such as carbonate, nitrate, sulfate, or oxalate, or oxidation with hydrogen peroxide or the like.
  • the sintering temperature is preferably 350° C. or higher and 900° C. or lower. Since cerium oxide particles prepared by the above-described methods tend to cause aggregation, they are preferably pulverized by a mechanical means.
  • a pulverizing method a dry milling method by a jet mill or the like, or a wet milling method with a planet bead mill or the like is preferable.
  • the median value of the secondary particle diameter of the abrasive is preferably 0.03 to 0.5 ⁇ m, and more preferably 0.05 to 0.3 ⁇ m. This is because that if the median value of the secondary particle diameter is less than 0.03 ⁇ m, the polishing rate tends to be low, and if more than 0.5 ⁇ m, the abrasive tends to give polishing scratches on the film surface to be polished.
  • the abrasive is dispersed in water to obtain a slurry.
  • the method for dispersion may be dispersion with an ordinary stirrer, or may use a homogenizer, ultrasonic disperser, wet ball mill or the like.
  • the concentration of the abrasive in the polishing slurry is not limited, but preferably in the range of 0.1% by mass or more and 20% by mass or less, more preferably in the range of 0.2% by mass or more and 10% by mass or less, and particularly preferably in the range of 0.5% by mass or more and 5% by mass or less from the viewpoint of manageability of the dispersion liquid (slurry).
  • the slurry may contain a dispersant for the abrasive. Since the dispersant for the abrasive is used for polishing of a semiconductor device, the content of alkali metals such as sodium and potassium ions, halogens, and sulfur in the dispersant is preferably 10 ppm or less.
  • a preferable example is a polymer dispersant containing an acrylic acid ammonium salt as a copolymerization component.
  • the addition amount of the dispersant is preferably in the range of 0.01 parts by mass or more and 5.0 parts by mass or less relative to 100 parts by mass of the abrasive particles in consideration of the relationship between the dispersibility of the particles in the polishing slurry and prevention of settling, and the relationship between polishing scratches and the addition amount of the dispersant.
  • the weight average molecular weight of the dispersant is preferably 100 to 50,000, and more preferably 1,000 to 10,000.
  • the weight average molecular weight is a value determined by gel permeation chromatography, and converted to standard polystyrene.
  • polishing slurry Since the abrasive in the thus prepared polishing slurry for silicon oxide of the invention (hereinafter also referred to as polishing slurry) has a particle diameter distribution, 99% by volume (D99) of the whole particles is preferably 1.0 ⁇ m or less. If D99 is more than 1.0 ⁇ m, many scratches (polishing scratches) may occur.
  • the median value of the secondary particle diameter of the abrasive in the polishing slurry may be determined by a light scattering method using, for example, a particle size analyzer (e.g., Mastersizer Micro Plus, manufactured by Malvern Instruments).
  • a particle size analyzer e.g., Mastersizer Micro Plus, manufactured by Malvern Instruments.
  • the content of coarse particles of 3 ⁇ m or more in the total solid content in the polishing slurry is preferably lower.
  • the content of particles of 3 ⁇ m or more is 500 ppm or less relative to the total solid content, it is preferable because the scratch reduction effect is evident.
  • the content of particles of 3 ⁇ m or more is 200 ppm or less relative to the total solid content, it is more preferable because the scratch reduction effect is higher.
  • the content of particles of 3 ⁇ m or more is 100 ppm or less relative to the total solid content, it is further preferable because the scratch reduction effect is highest.
  • the content of large particles of 3 ⁇ m or more is determined by mass determination of particles captured by a filter having pore diameter of 3 ⁇ m.
  • the means for reducing the content of large particles may be filtration or classification, but is not limited to them.
  • the polysilicon film polishing inhibitor of the invention is preferably a nonionic water-soluble polymer.
  • the reason is as follows: in a measurement of zeta potential on the surface of a silicon oxide film, which is to be polished by the polishing slurry of the invention, a negative zeta potential of about ⁇ 20 mV or less is indicated in a large pH range, while a polysilicon (polycrystalline silicon) film, which is to be hindered from being polished, has a pH of 8 or less and a zeta potential of about ⁇ 10 mV or less, which is relatively close to 0.
  • a nonionic water-soluble polymer is considered to more readily adhere to the surface of a polysilicon film than the surface of a silicon oxide film.
  • the weight average molecular weight of the water-soluble polymer is preferably 500 or more and 3,000,000 or less, and more preferably 1,000 or more and 1,000,000 or less. This is based on the assumption that those having a higher weight average molecular weight are more effective in inhibiting polishing upon adhesion to the surface of a polysilicon film. However, if the weight average molecular weight is excessive, the viscosity of the polishing slurry increases, which causes defects such as sedimentation of the abrasive. Accordingly, the lower limit is preferably 500 or more, more preferably 1,000 or more, and particularly preferably 2,000 or more. The upper limit is preferably 50,000 or less, more preferably 20,000 or less, and particularly preferably 10,000 or less.
  • Typical examples of the polysilicon film polishing inhibitor include water-soluble polymers group having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ⁇ -substituted derivatives thereof.
  • a polymer or copolymer using at least one selected from the polymerizable monomer represented by the following general formulae (I) and (II) is preferable. Also preferable is a copolymer using both of the polymerizable monomers represented by the general formulae (I) and (II).
  • the polymerizable monomers represented by the general formulae (I) and (II) may be copolymerized with other polymerizable monomers such as acrylic acid, acrylic esters of C 1 to C 18 , methacrylic acid, methacrylic acid esters of C 1 to C 18 , acrylamide, vinyl alcohol, acrylonitrile, vinyl pyrrolidone, vinyl pyridine, vinyl acetate, maleic acid, fumaric acid, itaconic acid, and p-styrenecarboxylic acid.
  • the polymer or copolymer preferably has a weight average molecular weight of 500 or more, and is preferably prepared by radical polymerization or the like.
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 2 and R 3 each independently represents a hydrogen atom, alkyl chain of C 1 to C 18 , methylol group, or acetyl group with the proviso that the case where both of them simultaneously represent a hydrogen atomis excluded.
  • R 1 represents a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group
  • R 4 represents a morpholino group, thiomorpholino group, pyrrolidino group, or piperidino group.
  • Examples of the water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton include: compounds having a N-monosubstituted skeleton such as N-methylacrylamide, N-ethylacrylamide, N-propylacrylamide, N-isopropylacrylamide, N-butylacrylamide, N-isobutylacrylamide, N-tertiarybutylacrylamide, N-heptylacrylamide, N-octylacrylamide, N-tertiaryoctylacrylamide, N-dodecylacrylamide, N-octadecylacrylamide, N-methylolacrylamide, N-acetylacrylamide, N-diacetone acrylamide, N-methylmethacrylamide, N-ethylmethacrylamide, N-propylmethacrylamide, N-isopropylmethacrylamide, N-butylmethacrylamide, N
  • polysilicon film polishing inhibitor of the invention examples include polyethylene glycol which is a water-soluble polymer.
  • polysilicon film polishing inhibitor of the invention also include an oxyethylene adduct of an acetylene-based diol which is a water-soluble polymer.
  • examples of the oxyethylene adduct of an acetylene-based diol include compounds such as 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 2,4,7,9-tetramethyl-5-decyne-4,7-diol-dipolyoxyethylene ether, and 2,4,7,9-tetramethyl-5-decyne-4,7-diol-monopolyoxyethylene ether.
  • 2,4,7,9-tetra methyl-5-decyne-4, 7-diol-dipolyoxyethylene ether is particularly preferable from the view point of both of water solubility and decrease of surface tension.
  • polysilicon film polishing inhibitor of the invention also include a compound represented by the following general formula (III) and/or an organic compound having an acetylene bond represented by the following general formula (IV).
  • R 1 represents a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 2 represents a substituted or unsubstituted alkyl group having 4 to 10 carbon atoms.
  • R 3 to R 6 each independently represent a hydrogen atom or substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
  • R 7 and R 8 each independently represent a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms
  • m and n each independently represents 0 or a positive number.
  • polysilicon film polishing inhibitor of the invention also include an alkoxylated linear aliphatic alcohol.
  • the pH of the polishing slurry using the polysilicon film polishing inhibitor is preferably 5.0 or more and 8.0 or less, and more preferably 6.0 or more and 7.0 or less. If the pH is less than 5, the polishing rate for a polysilicon film tends to increase, and if the pH is more than 8, the polishing rate for a silicon oxide film tends to decrease.
  • the pH of the polishing slurry is measured as follows: two-point calibration is performed using standard buffer solutions (phthalate pH buffer solution having a pH of 4.21 (25° C.) and a neutral phosphate pH buffer solution having a pH of 6.86 (25° C.)) with a pH meter (e.g., model number PH81 manufactured by Yokogawa Electric Corporation), subsequently the electrode is immersed in the polishing slurry, and the pH is measured after it becomes stable after a lapse of at least two minutes.
  • the pH may be adjusted with an alkaline component or acid such as ammonia or tetramethyl ammonium hydroxide (TMAH).
  • TMAH tetramethyl ammonium hydroxide
  • the polysilicon film polishing inhibitor may be used alone, but preferably in combination of two or more of them, and particularly preferably contains two or more members selected from the water-soluble polymer compound having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ⁇ -substituted derivatives thereof, polyethylene glycol, an oxyethylene adduct of an acetylene-based diol, a compound represented by the general formula (III), a compound represented by the general formula (IV), and an alkoxylated linear aliphatic alcohol.
  • the addition amount of the polysilicon film polishing inhibitor is preferably in the range of 0.005% by mass or more and 2% by mass or less relative to 100 parts by mass of the polishing slurry, or 0.005 to 2% by mass in the polishing slurry. If the amount is less than 0.005% by mass, the inhibitory effect on polishing of a polysilicon film is low, and if more than 2% by mass, the polishing rate for a silicon oxide film may decrease, and flowability may deteriorate due to gelation.
  • polysilicon film polishing inhibitors examples include polyvinyl pyrrolidone or copolymers containing vinyl pyrrolidone (hereinafter they are collectively referred to as polyvinyl pyrrolidones).
  • the addition amount of polyvinyl pyrrolidones is preferably in the range of 0.005% by mass or more and 5% by mass or less relative to the polishing slurry.
  • the weight average molecular weight of polyvinyl pyrrolidones is preferably 10,000 to 1,200,000. If the molecular weight is less than 10,000, planarization property tends to be insufficient, and if more than 1,200,000, the abrasive tends to cause aggregation.
  • the pH of the polishing slurry using a polyvinyl pyrrolidone is preferably 5.0 or more and 12.0 or less, and more preferably 6.0 or more and 7.0 or less. If the pH is less than 5.0, the polishing rate for a polysilicon film tends to be excessive, and if the pH is more than 12, the polishing rate for a polysilicon film tends to decrease.
  • the polyvinyl pyrrolidones may be combined with the above-described polysilicon film polishing inhibitor.
  • the polishing slurry of the invention may be combined with other water-soluble polymers.
  • the other water-soluble polymers are not particularly limited, and include polysaccharides such as alginic acid, pectin acid, carboxy methyl cellulose, agar, curdlan and pullulan; polycarboxylic acids and salts thereof such as polyasparatic acid, polyglutamic acid, polylysine, polymalic acid, polymethacrylic acid, polymethacrylic acid ammonium salt, polymethacrylic acid sodium:salt, polyamide acid, polymaleic acid, polyitaconic acid, polyfumaric acid, poly(p-styrene carboxylic acid), polyacrylic acid, polyacrylamide, amino polyacrylamide, polyacrylic acid ammonium salt, sodium polyacrylate salt, polyamide acid, polyamide acid ammonium salt, polyamide acid sodium salt, and polyglyoxalic acid; and vinyl polymers such as polyvinyl alcohol and polyacrolein.
  • the addition amount of the polyacrylic acid, polyacrylate, and copolymer containing acrylate is preferably in the range of 0.01% by mass or more and 5% by mass or less relative to 100 parts by mass of the polishing slurry. This is because that if the amount is less than 0.01% by mass, the effect of improving the flatness is low, and if more than 5% by mass, the abrasive tends to cause aggregation.
  • the polysilicon film polishing inhibitor may be combined with the additive for improving global flatness. More specifically, the water-soluble polysilicon film polishing inhibitor will not cause any problem even if it is combined with an additive for improving flatness containing a copolymer containing polyacrylic acid, polyacrylate, or acrylate.
  • the additive liquid for polishing slurry of the invention is an additive liquid for polishing slurry used in a polishing slurry for polishing a silicon oxide film on polysilicon, and contains a polysilicon polishing inhibitor and water.
  • the polishing slurry for silicon oxide of the invention may be preserved as a two-liquid polishing slurry in which a slurry containing an abrasive and water is separated from an additive liquid containing a polysilicon polishing inhibitor and water, or may be preserved as a one-liquid polishing slurry containing an additive liquid or a polysilicon polishing inhibitor.
  • the polishing slurry is preserved as a two-liquid polishing slurry, its planarization property and polishing rate can be adjusted by arbitrarily changing the formulation of the two-liquids.
  • the additive liquid and the slurry are sent in different lines, and the lines are merged into one to mix the liquids immediately before the outlet of the feeding line, and the mixture is supplied onto the polishing platen, or the additive is mixed with the slurry immediately before polishing.
  • the additive for improving flatness is preferably contained in the additive liquid.
  • Examples of the method for preparing a silicon oxide film which can be polished with the polishing slurry of the invention include a low-pressure CVD method and a plasma CVD method. Formation of a silicon oxide film by the low-pressure CVD method is achieved by an oxidation reaction of SiH 4 —O 2 system at a low temperature of 400° C. or lower using monosilane (SiH 4 ) as an Si source, and oxygen (O 2 ) as an oxygen source. According to circumstances, CVD may be followed by heat treatment at a temperature of 1000° C. or lower. When phosphorus (P) is doped in order to planarize the surface by high-temperature reflowing, it is preferable to use a reaction gas of SiH 4 —O 2 —PH 3 system.
  • the plasma CVD method has an advantage that any chemical reaction which requires a high temperature under normal heat equilibrium can be carried out at a low temperature.
  • the reaction gas include a gas of SiH 4 —N 2 O system using SiH 4 as an Si source and N 2 O as an oxygen source, and a gas of TEOS—O 2 system using tetraethoxysilane (TEOS) as an Si source (TEOS-plasma CVD method).
  • the substrate temperature is preferably in the range of 250 to 400° C.
  • the reaction pressure is preferably in the range of 67 to 400 Pa.
  • the silicon oxide film may be doped with an element such as phosphorus or boron.
  • formation of a polysilicon film by the CVD method is performed using SiH 4 as an Si source at a substrate temperature of 600 to 1000° C.
  • the polishing method of the invention is a method for polishing an object to be polished, wherein the object to be polished is held against a polishing pad with its surface to be polished facing the polishing pad, and polished by being slid relative to the polishing pad while a polishing slurry is supplied between the polishing pad and the surface to be polished, and the polishing slurry for silicon oxide of the invention is used as the polishing slurry.
  • the object to be polished include a substrate involved in the manufacture of a semiconductor device, for example a substrate comprising a polysilicon film having formed thereon a silicon oxide film.
  • the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film is preferably 10 or more from the viewpoint of easy stop control of polishing.
  • the polishing rate for a silicon oxide film is preferably 50 nm/min or more, and more preferably 100 nm/min or more.
  • the polishing rate for polysilicon is preferably 10 nm/min or less, and more preferably 5 nm/min or less.
  • the polishing apparatus may be a common polishing apparatus comprising a holder for holding a substrate and a platen equipped with a motor or the like with variable rotation number, to which a polishing cloth (pad) can be attached.
  • the polishing cloth may be a common nonwoven fabric, foamed polyurethane, or porous fluorocarbon resin, and is not particularly limited.
  • the polishing cloth is preferably groove-processed for retaining the polishing slurry.
  • the polishing conditions are not limited, but the rotation rate of the platen is preferably as lows as 200 min ⁇ 1 or less for preventing the substrate from jumping out, and the pressure to be applied to the substrate is preferably 9.8 ⁇ 10 4 Pa or less in order to prevent the development of scratches.
  • the polishing slurry is continuously supplied to the polishing cloth with a pump or the like.
  • the amount of the polishing slurry to be supplied is not particularly limited, but is preferably in an amount so that the surface of the polishing cloth is constantly covered with the polishing slurry.
  • the substrate after completion of polishing is preferably thoroughly washed in running water, and dried after water droplets adhering to the substrate are knocked off with a spin dryer or the like.
  • the invention is further illustrated by following Examples. The invention is not limited to these Examples.
  • the pulverized particles were observed with a scanning electron microscope to find that large pulverization residue particles of 1 ⁇ m to 3 ⁇ m and pulverization residue particles of 0.5 ⁇ m to 1 ⁇ m were present in a mixed state in addition to small particles having the same size as the primary particle diameter.
  • 1 kg of the cerium oxide particles prepared above was mixed with 23 g of an aqueous solution of polyacrylic acid ammonium salt (40% by mass) and 8977 g of deionized water, followed by ultrasonic dispersion for 10 minutes while being stirred.
  • the obtained slurry was filtered through a 1-micron filter, and followed by further addition of deionized water to obtain a 5% by mass slurry.
  • the slurry had a pH of 8.3.
  • the slurry was diluted to an appropriate concentration in order to examine the slurry particles with a laser diffraction particle size analyzer to find that the median value of the particle diameter was 190 nm.
  • Synthesis was carried out using 50 g of N,N-diethylacrylamide and 50 g of acryloyl morpholine by the method of Synthesis example 1 to obtain a water-soluble polymer solution.
  • the concentration of the water-soluble polymer in the solution was 25.1%.
  • Synthesis was carried out using 50 g of N,N-diethylacrylamide and 50 g of N,N-dimethylacrylamide by the method of Synthesis example 1 to obtain a water-soluble polymer solution.
  • the concentration of the water-soluble polymer in the solution was 25.0%.
  • Synthesis was carried out using 100 g of N,N-dimethylacrylamide by the method of Synthesis example 1 to obtain a water-soluble polymer solution.
  • the concentration of the water-soluble polymer in the solution was 25.1%.
  • Polyacrylic acid (trade name: JULIMER AC-10S, manufactured by Nihonjunyaku Co., Ltd.) was procured.
  • a polishing slurry was prepared in the same manner as polishing slurry 4 except that a solution of the water-soluble polymer 3-2 (synthesis example 2) was used as a polysilicon polishing inhibitor in place of the water-soluble polymer 3-1 (synthesis example 1).
  • a polishing slurry was prepared in the same manner as polishing slurry 4 except that a solution of the water-soluble polymer 3-3 (synthesis example 3) was used as a polysilicon polishing inhibitor in place of the water-soluble polymer 3-1 (synthesis example 1).
  • a polishing slurry was prepared in the same manner as polishing slurry 4 except that a solution of the water-soluble polymer 3-4 (synthesis example 4) was used as a polysilicon polishing inhibitor in place of the water-soluble polymer 3-1 (synthesis example 1).
  • a polishing slurry was prepared in the same manner as polishing slurry 8 except that a solution of the water-soluble polymer 3-4 (synthesis example 4) was used as a polysilicon polishing inhibitor in place of the water-soluble polymer 3-1 (synthesis example 1).
  • the substrate below was subjected to CMP polishing under following conditions while a polishing slurry of the polishing slurry 1 was dropped on the pad attached to the platen, and evaluated as described below.
  • Substrate 1 A blanket substrate of 8 inch diameter comprising a Si substrate having formed thereon a silicon oxide film (P—TEOS) of 0.8 ⁇ m thickness.
  • P—TEOS silicon oxide film
  • Substrate 2 A blanket substrate of 8 inch diameter comprising a Si substrate having formed thereon a silicon oxide film of 0.1 ⁇ m thickness and a polysilicon film of 0.4 ⁇ m thickness in this order.
  • Polishing apparatus MIRRA polishing machine, manufactured by AMAT, platen diameter 600 mm, rotary type
  • Polishing pad IC-1000/Suba 400 manufactured by Nitta Haas Incorporated, foamed double layer pad with a concentric groove
  • Polishing slurry flow rate 200 ml/min
  • Silicon oxide polishing rate by CMP Difference in the film thickness of the substrate 1 before and after CMP was determined with an optical film thickness measuring device.
  • Polysilicon polishing rate by CMP Difference in the film thickness of the substrate 2 before and after CMP was determined with an optical film thickness measuring device.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 160 nm/min, the polishing rate for a polysilicon was 0.7 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 228.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 2 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 250 nm/min, the polishing rate for a polysilicon was 1.5 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 167.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 3 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 90 nm/min, the polishing rate for a polysilicon was 3.5 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 26.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 4 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 270 nm/min, the polishing rate for a polysilicon was 1.2 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 225.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 5 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 250 nm/min, the polishing rate for a polysilicon was 1 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 250.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 6 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 200 nm/min, the polishing rate for a polysilicon was 1.5 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 133.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 7 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 190 nm/min, the polishing rate for a polysilicon was 1.1 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 173.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 8 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 160 nm/min, the polishing rate for a polysilicon was 0.8 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 200.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 3 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 170 nm/min, the polishing rate for a polysilicon was 1 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 170.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 10 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 180 nm/min, the polishing rate for a polysilicon was 1 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 180.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 11 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 180 nm/min, the polishing rate for a polysilicon was 2 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 90.
  • the polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 12 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 150 nm/min, the polishing rate for a polysilicon was 1 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 150.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 13 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 410 nm/min, the polishing rate for a polysilicon was 90 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 4.6.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 14 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 260 nm/min, the polishing rate for a polysilicon was 60 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 4.3.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 15 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 22 nm/min, the polishing rate for a polysilicon was 0.8 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 27.5.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 16 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 280 nm/min, the polishing rate for a polysilicon was 35 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 8.0.
  • polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 17 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 435 nm/min, the polishing rate for a polysilicon was 75 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 5.8.
  • the polishing rates for a silicon oxide film and a polysilicon film were evaluated using a polishing slurry of the polishing slurry 18 under the same conditions as Example 1.
  • the results of the evaluation indicate that the polishing rate for a silicon oxide film was 432 nm/min, the polishing rate for a polysilicon was 110 nm/min, and the ratio of the polishing rate for a silicon oxide film to the polishing rate for a polysilicon film was 3.9.
  • Tables 1 through 3 show the polishing rate and polishing rate ratio of Examples and Comparative Examples. TABLE 1 Ex. 1 Ex. 2 Ex. 3 Ex. 4 Ex. 5 Ex. 6 Ex.
  • Examples 1 through 14 of the invention exhibited a high polishing rate for a silicon oxide film and a low polishing rate for polysilicon, and achieved a sufficiently large polishing rate ratio between a silicon oxide film and polysilicon, wherein polysilicon is applicable as a stopper.
  • the polishing rate for an oxide film was rather low at pH 4.5 in Example 13, and the polishing rate for a polysilicon film was rather high at pH 9 in Example 14, indicating that higher practicality is achieved in the range of pH 5 to 8.
  • Comparative Examples 1, 3, and 4 in which no polysilicon polishing inhibitor was used, the polishing rate for a silicon oxide film was high, but the polishing rate for polysilicon was also high, wherein polysilicon is inapplicable as a stopper.
  • Comparative Example 2 in which no polysilicon polishing inhibitor was used but an additive was used, the polishing rate for polysilicon was so high that the polishing rate ratio between a silicon oxide film and polysilicon was not large.
  • the invention provides a polishing slurry and a polishing method which are capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in a CMP technique in the manufacturing process of a semiconductor in which a silicon oxide film is polished.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
US11/594,988 2005-11-11 2006-11-09 Polishing slurry for silicon oxide, additive liquid and polishing method Abandoned US20070175104A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-327422 2005-11-11
JP2005327422 2005-11-11

Publications (1)

Publication Number Publication Date
US20070175104A1 true US20070175104A1 (en) 2007-08-02

Family

ID=38023279

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/594,988 Abandoned US20070175104A1 (en) 2005-11-11 2006-11-09 Polishing slurry for silicon oxide, additive liquid and polishing method

Country Status (8)

Country Link
US (1) US20070175104A1 (zh)
EP (2) EP1956642A4 (zh)
JP (3) JP4872919B2 (zh)
KR (3) KR101243423B1 (zh)
CN (3) CN101560373B (zh)
SG (1) SG173357A1 (zh)
TW (1) TWI323280B (zh)
WO (1) WO2007055278A1 (zh)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080311750A1 (en) * 2007-04-23 2008-12-18 Nippon Chemical Industrial Co., Ltd. Polishing composition for semiconductor wafer and polishing method
US20080318427A1 (en) * 2007-06-19 2008-12-25 Jsr Corporation Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
US20100301014A1 (en) * 2008-02-01 2010-12-02 Fujimi Incorporated Polishing Composition and Polishing Method Using the Same
US20110124195A1 (en) * 2008-07-24 2011-05-26 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
EP2428541A1 (en) 2010-09-08 2012-03-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
WO2012032467A1 (en) * 2010-09-08 2012-03-15 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
US20120094490A1 (en) * 2009-04-22 2012-04-19 Lg Chem. Ltd Slurry For Chemical Mechanical Polishing
US20120214307A1 (en) * 2009-11-12 2012-08-23 Hitachi Chemical Company, Ltd. Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
US20130244432A1 (en) * 2012-03-14 2013-09-19 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
US20150102012A1 (en) * 2013-10-10 2015-04-16 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US20150135602A1 (en) * 2011-12-28 2015-05-21 Konica Minolta, Inc. Abrasive Agent Manufacturing Method
EP2840591A4 (en) * 2012-04-17 2016-01-20 Kao Corp COMPOSITION FOR A SILICON WAFER POLISH LIQUID
EP2922085A4 (en) * 2012-11-15 2016-07-13 Fujimi Inc POLISHING COMPOSITION
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
US9524874B2 (en) 2010-12-10 2016-12-20 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US20170166778A1 (en) * 2014-01-31 2017-06-15 Basf Se Chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
US20170178890A1 (en) * 2015-12-21 2017-06-22 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor substrate polishing methods with dynamic control
US20190061095A1 (en) * 2016-03-01 2019-02-28 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
US10246620B2 (en) 2014-05-09 2019-04-02 Shin-Etsu Chemical Co., Ltd. CMP polishing agent, method for manufacturing thereof, and method for polishing substrate
US10344185B2 (en) 2014-06-24 2019-07-09 Fujimi Incorporated Composition for polishing silicon wafers
CN111149193A (zh) * 2017-09-29 2020-05-12 日立化成株式会社 研磨液、研磨液套剂及研磨方法
US10745588B2 (en) 2013-06-07 2020-08-18 Fujimi Incorporated Silicon wafer polishing composition
CN112111279A (zh) * 2020-08-13 2020-12-22 天津爱旭太阳能科技有限公司 一种太阳能电池制备碱抛光用添加剂及抛光工艺
US11081359B2 (en) 2018-09-10 2021-08-03 Globalwafers Co., Ltd. Methods for polishing semiconductor substrates that adjust for pad-to-pad variance
US11384255B2 (en) 2017-12-20 2022-07-12 Kctech Co., Ltd. Polishing slurry composition for STI process
US20220223402A1 (en) * 2021-01-14 2022-07-14 Applied Materials, Inc. Method of cmp integration for improved optical uniformity in advanced lcos back-plane
US11573452B2 (en) 2020-11-20 2023-02-07 Applied Materials, Inc. Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes
US11586067B2 (en) 2020-11-20 2023-02-21 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
US11881539B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5441358B2 (ja) * 2008-05-28 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
CN104845532B (zh) * 2009-06-22 2017-10-03 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
CN107474799B (zh) 2010-03-12 2020-12-29 昭和电工材料株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
CN103409108B (zh) 2010-11-22 2015-04-22 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN104137232A (zh) * 2012-02-21 2014-11-05 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
KR102004570B1 (ko) 2012-02-21 2019-07-26 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
SG11201407086TA (en) 2012-05-22 2015-02-27 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
KR102034328B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP6280688B2 (ja) * 2012-10-12 2018-02-14 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法及び研磨用組成物
JP5995659B2 (ja) * 2012-10-30 2016-09-21 花王株式会社 シリコンウェーハ用研磨液組成物
JP6039419B2 (ja) * 2012-12-28 2016-12-07 花王株式会社 シリコンウェーハ用研磨液組成物
JP5900913B2 (ja) * 2013-03-19 2016-04-06 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット
JP6169938B2 (ja) * 2013-10-04 2017-07-26 花王株式会社 シリコンウェーハ用研磨液組成物
WO2015068672A1 (ja) * 2013-11-08 2015-05-14 東亞合成株式会社 半導体用濡れ剤及び研磨用組成物
JP5859054B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP5859055B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP6422325B2 (ja) * 2014-12-15 2018-11-14 花王株式会社 半導体基板用研磨液組成物
JP6418941B2 (ja) * 2014-12-25 2018-11-07 花王株式会社 シリコンウェーハ用研磨液組成物
KR102619722B1 (ko) * 2016-10-27 2024-01-02 삼성디스플레이 주식회사 트랜지스터 표시판의 제조 방법 및 이에 이용되는 연마 슬러리
JP6839767B2 (ja) * 2017-09-11 2021-03-10 昭和電工株式会社 セリウム系研磨材用原料の製造方法、及びセリウム系研磨材の製造方法
WO2019069370A1 (ja) 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
KR20200076991A (ko) 2018-12-20 2020-06-30 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
KR102676957B1 (ko) 2019-04-02 2024-06-19 가부시끼가이샤 레조낙 연마액, 연마액 세트, 연마 방법 및 결함 억제 방법
JP2021050268A (ja) * 2019-09-24 2021-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020034875A1 (en) * 2000-05-22 2002-03-21 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
US6689818B2 (en) * 2001-11-26 2004-02-10 Nissin Chemical Industry Co., Ltd. Dispersant compositions
US20040132305A1 (en) * 2002-10-31 2004-07-08 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US20050130428A1 (en) * 2003-12-12 2005-06-16 Jaekwang Choi Slurry compositions and CMP methods using the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3190742B2 (ja) * 1992-10-12 2001-07-23 株式会社東芝 研磨方法
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH10106994A (ja) * 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JPH10247685A (ja) * 1997-03-05 1998-09-14 Toshiba Corp 半導体装置の製造方法
JP3457144B2 (ja) * 1997-05-21 2003-10-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP4115562B2 (ja) * 1997-10-14 2008-07-09 株式会社フジミインコーポレーテッド 研磨用組成物
JPH11121608A (ja) * 1997-10-16 1999-04-30 Toshiba Corp 半導体装置の製造方法
JP3116879B2 (ja) * 1997-11-10 2000-12-11 日本電気株式会社 半導体装置の製造方法
CN1203529C (zh) * 1999-08-17 2005-05-25 日立化成工业株式会社 化学机械研磨用研磨剂及基板的研磨法
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP2003007660A (ja) * 2001-06-25 2003-01-10 Hitachi Chem Co Ltd Ｃｍｐ研磨材および基板の研磨方法
JP2003017445A (ja) * 2001-06-28 2003-01-17 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2003218069A (ja) * 2002-01-23 2003-07-31 Fujimi Inc 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP3984902B2 (ja) * 2002-10-31 2007-10-03 Ｊｓｒ株式会社 ポリシリコン膜又はアモルファスシリコン膜研磨用化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
TWI276169B (en) * 2003-01-31 2007-03-11 Hitachi Chemical Co Ltd CMP abrasive and polishing method
JP2004297035A (ja) 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
JP2004331852A (ja) * 2003-05-09 2004-11-25 Tama Kagaku Kogyo Kk 分散安定性に優れた研磨剤スラリー及び基板の製造方法
KR100698396B1 (ko) * 2003-05-28 2007-03-23 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법
KR100543457B1 (ko) * 2003-06-02 2006-01-23 삼성전자주식회사 반도체 공정에서 사용되는 부식방지제를 포함하는 세정액
JP4202955B2 (ja) * 2004-03-17 2008-12-24 株式会社東芝 有機膜の化学的機械的研磨方法
KR20050044085A (ko) * 2003-11-07 2005-05-12 삼성전자주식회사 집적회로 소자의 세정액 및 그 세정액을 이용한 세정방법
KR100640600B1 (ko) * 2003-12-12 2006-11-01 삼성전자주식회사 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법
JP2005327422A (ja) 2004-05-17 2005-11-24 Sony Corp 記録／再生装置及び記録／再生方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020034875A1 (en) * 2000-05-22 2002-03-21 Samsung Electronics Co., Ltd. Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
US6689818B2 (en) * 2001-11-26 2004-02-10 Nissin Chemical Industry Co., Ltd. Dispersant compositions
US20040132305A1 (en) * 2002-10-31 2004-07-08 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US20050130428A1 (en) * 2003-12-12 2005-06-16 Jaekwang Choi Slurry compositions and CMP methods using the same
US7314578B2 (en) * 2003-12-12 2008-01-01 Samsung Electronics Co., Ltd. Slurry compositions and CMP methods using the same

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114178B2 (en) * 2007-04-23 2012-02-14 Nippon Chemical Industrial Co., Ltd. Polishing composition for semiconductor wafer and polishing method
US20080311750A1 (en) * 2007-04-23 2008-12-18 Nippon Chemical Industrial Co., Ltd. Polishing composition for semiconductor wafer and polishing method
US20080318427A1 (en) * 2007-06-19 2008-12-25 Jsr Corporation Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
US8470195B2 (en) * 2007-06-19 2013-06-25 Jsr Corporation Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
US10144849B2 (en) * 2008-02-01 2018-12-04 Fujimi Incorporated Polishing composition and polishing method using the same
US20100301014A1 (en) * 2008-02-01 2010-12-02 Fujimi Incorporated Polishing Composition and Polishing Method Using the Same
US20110124195A1 (en) * 2008-07-24 2011-05-26 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
US9080079B2 (en) * 2009-04-22 2015-07-14 Lg Chem, Ltd. Slurry for chemical mechanical polishing
US20120094490A1 (en) * 2009-04-22 2012-04-19 Lg Chem. Ltd Slurry For Chemical Mechanical Polishing
TWI488952B (zh) * 2009-11-12 2015-06-21 Hitachi Chemical Co Ltd Ｃｍｐ研磿液以及使用此ｃｍｐ研磨液的研磨方法以及半導體基板的製造方法
US20120214307A1 (en) * 2009-11-12 2012-08-23 Hitachi Chemical Company, Ltd. Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
EP2500928A1 (en) * 2009-11-12 2012-09-19 Hitachi Chemical Company, Ltd. Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
KR101357328B1 (ko) 2009-11-12 2014-02-03 히타치가세이가부시끼가이샤 Ｃｍｐ 연마액, 및 이것을 이용한 연마 방법 및 반도체 기판의 제조 방법
EP2500928A4 (en) * 2009-11-12 2014-06-25 Hitachi Chemical Co Ltd CHEMICAL MECHANICAL POLISHING LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND POLISHING METHOD USING THE POLISHING LIQUID
WO2012032467A1 (en) * 2010-09-08 2012-03-15 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
EP2428541A1 (en) 2010-09-08 2012-03-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US9524874B2 (en) 2010-12-10 2016-12-20 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
US20150135602A1 (en) * 2011-12-28 2015-05-21 Konica Minolta, Inc. Abrasive Agent Manufacturing Method
US9388331B2 (en) * 2011-12-28 2016-07-12 Konica Minolta, Inc. Abrasive agent manufacturing method
US20130244432A1 (en) * 2012-03-14 2013-09-19 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
EP2840591A4 (en) * 2012-04-17 2016-01-20 Kao Corp COMPOSITION FOR A SILICON WAFER POLISH LIQUID
EP2922085A4 (en) * 2012-11-15 2016-07-13 Fujimi Inc POLISHING COMPOSITION
US9837283B2 (en) 2012-11-15 2017-12-05 Fujimi Incorporated Polishing composition
US10745588B2 (en) 2013-06-07 2020-08-18 Fujimi Incorporated Silicon wafer polishing composition
US20150102012A1 (en) * 2013-10-10 2015-04-16 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US20170166778A1 (en) * 2014-01-31 2017-06-15 Basf Se Chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
US10246620B2 (en) 2014-05-09 2019-04-02 Shin-Etsu Chemical Co., Ltd. CMP polishing agent, method for manufacturing thereof, and method for polishing substrate
US10344185B2 (en) 2014-06-24 2019-07-09 Fujimi Incorporated Composition for polishing silicon wafers
US20170178890A1 (en) * 2015-12-21 2017-06-22 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor substrate polishing methods with dynamic control
US10600634B2 (en) * 2015-12-21 2020-03-24 Globalwafers Co., Ltd. Semiconductor substrate polishing methods with dynamic control
US20190061095A1 (en) * 2016-03-01 2019-02-28 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
US11897081B2 (en) * 2016-03-01 2024-02-13 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
CN111149193A (zh) * 2017-09-29 2020-05-12 日立化成株式会社 研磨液、研磨液套剂及研磨方法
US11384255B2 (en) 2017-12-20 2022-07-12 Kctech Co., Ltd. Polishing slurry composition for STI process
US11081359B2 (en) 2018-09-10 2021-08-03 Globalwafers Co., Ltd. Methods for polishing semiconductor substrates that adjust for pad-to-pad variance
CN112111279A (zh) * 2020-08-13 2020-12-22 天津爱旭太阳能科技有限公司 一种太阳能电池制备碱抛光用添加剂及抛光工艺
US11586067B2 (en) 2020-11-20 2023-02-21 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11573452B2 (en) 2020-11-20 2023-02-07 Applied Materials, Inc. Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes
US11881539B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane
US20220223402A1 (en) * 2021-01-14 2022-07-14 Applied Materials, Inc. Method of cmp integration for improved optical uniformity in advanced lcos back-plane
US11908678B2 (en) * 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane

Also Published As

Publication number Publication date
KR20120003505A (ko) 2012-01-10
CN101560373A (zh) 2009-10-21
EP2410558A2 (en) 2012-01-25
CN100587918C (zh) 2010-02-03
TW200724658A (en) 2007-07-01
EP1956642A1 (en) 2008-08-13
JP2011223018A (ja) 2011-11-04
CN101305450A (zh) 2008-11-12
JPWO2007055278A1 (ja) 2009-04-30
JP5447482B2 (ja) 2014-03-19
KR101243423B1 (ko) 2013-03-13
JP5370421B2 (ja) 2013-12-18
KR20100115820A (ko) 2010-10-28
EP2410558A3 (en) 2012-04-18
CN101560373B (zh) 2013-09-04
CN102965025B (zh) 2014-10-29
CN102965025A (zh) 2013-03-13
KR101260621B1 (ko) 2013-05-03
KR101029929B1 (ko) 2011-04-18
KR20080067665A (ko) 2008-07-21
WO2007055278A1 (ja) 2007-05-18
JP2012044197A (ja) 2012-03-01
SG173357A1 (en) 2011-08-29
EP1956642A4 (en) 2011-04-06
JP4872919B2 (ja) 2012-02-08
TWI323280B (en) 2010-04-11

Similar Documents

Publication Publication Date Title
US20070175104A1 (en) Polishing slurry for silicon oxide, additive liquid and polishing method
JP5110058B2 (ja) Ｃｍｐ研磨剤及び研磨方法
JP5655879B2 (ja) Ｃｍｐ研磨剤及び基板の研磨方法
US8900335B2 (en) CMP polishing slurry and method of polishing substrate
US20070218811A1 (en) Cmp polishing slurry and method of polishing substrate
TWI780194B (zh) 研磨液、研磨液套組及研磨方法
WO2006098141A1 (ja) 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
KR102279324B1 (ko) 연마 슬러리 조성물
US11884843B2 (en) Polishing composition, polishing method, and method of producing semiconductor substrate
WO2015019849A1 (ja) Ｃｍｐ用研磨液
JP2006179678A (ja) 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
TW202330819A (zh) 用於介電質化學機械研磨之包含高分子量聚合物之基於二氧化矽之漿料組合物
JP2006041034A (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP2006041033A (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP2011233748A (ja) 基板の研磨方法
JP2006036963A (ja) Ｃｍｐ研磨剤及び基板の研磨方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI CHEMICAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NISHIYAMA, MASAYA;ENOMOTO, KAZUHIRO;FUKASAWA, MASATO;AND OTHERS;REEL/FRAME:019101/0519

Effective date: 20070319

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION