US20070120448A1 - Multilayered piezoelectric element and method of manufacturing the same - Google Patents

Multilayered piezoelectric element and method of manufacturing the same Download PDF

Info

Publication number
US20070120448A1
US20070120448A1 US11/604,699 US60469906A US2007120448A1 US 20070120448 A1 US20070120448 A1 US 20070120448A1 US 60469906 A US60469906 A US 60469906A US 2007120448 A1 US2007120448 A1 US 2007120448A1
Authority
US
United States
Prior art keywords
electrode layer
piezoelectric material
layer
multilayered
multilayered structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/604,699
Other languages
English (en)
Inventor
Tetsu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Assigned to FUJIFILM CORPORATION reassignment FUJIFILM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYOSHI, TETSU
Publication of US20070120448A1 publication Critical patent/US20070120448A1/en
Priority to US12/126,459 priority Critical patent/US7765660B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • the present invention relates to a piezoelectric element having a multilayered structure, i.e., a multilayered piezoelectric element to be used as a piezoelectric actuator, an ultrasonic transducer and so on, and a method of manufacturing the multilayered piezoelectric element.
  • a piezoelectric material represented by a material having a lead-based perovskite structure such as PZT (Pb (lead) zirconate titanate) provides a piezoelectric effect of expanding and contracting when applied with a voltage.
  • a piezoelectric element having the property is utilized in various uses such as piezoelectric pumps, piezoelectric actuators and ultrasonic transducers.
  • the basic structure of a piezoelectric element is a single-layer structure in which two electrodes are formed on both ends of one piezoelectric material. Accompanied with microfabrication and integration of piezoelectric elements with recent developments of MEMS (micro electro mechanical systems) related devices, multilayered piezoelectric elements each having plural piezoelectric materials and plural electrodes alternately stacked have been used.
  • FIG. 7 is a sectional view showing a structure of a conventional multilayered piezoelectric element.
  • This piezoelectric element includes a multilayered structure having alternately stacked piezoelectric material layers 100 and internal electrode layers 101 a and 101 b , side electrodes 103 a and 103 b , an upper electrode 104 and a lower electrode 105 .
  • Insulating regions 102 a and 102 b are provided in the internal electrode layers 101 a and 101 b , respectively.
  • the side electrode 103 a is connected to the internal electrode layers 101 a and insulated from the internal electrode layers 101 b by the insulating regions 102 b . Further, the side electrode 103 b is connected to the internal electrode layers 101 b and insulated from the internal electrode layers 101 a by the insulating regions 102 a . Furthermore, the upper electrode layer 104 is connected to the side electrode 103 a , and the lower electrode layer 105 is connected to the side electrode 103 b.
  • electrodes of the piezoelectric element By forming the electrodes of the piezoelectric element in the above-mentioned manner, electrodes for applying electric fields to each of the piezoelectric material layers 100 are connected in parallel. Thereby, a capacitance between the electrodes of the multilayered structure as a whole becomes larger, and the rise in electrical impedance can be suppressed even when the size of the piezoelectric element is made smaller.
  • each internal electrode layer is formed on an entire surface of respective one of the piezoelectric material layers and the internal electrode layer is insulated from either one of the side electrodes by forming an insulating film on an end surface of the internal electrode layer at a side surface of the multilayered structure.
  • a purpose of the present invention is to prevent, in a multilayered piezoelectric element having a multilayered structure, separation of side electrodes or insulating films formed on side surfaces of the multilayered structure from end surfaces of internal electrodes.
  • a multilayered piezoelectric element is a multilayered piezoelectric element having a multilayered structure in which at least one first electrode layer and at least one second electrode layer are alternately stacked with a piezoelectric material layer therebetween, and includes: plural piezoelectric material layers; a first electrode layer having an end portion at least apart of which protrudes to an outer side than adjacent piezoelectric material layers on a first side surface of the multilayered structure, and formed such that a first insulating region is provided between the first electrode layer and a second side surface of the multilayered structure; a second electrode layer having an end portion at least a part of which protrudes to an outer side than adjacent piezoelectric material layers on the second side surface of the multilayered structure, and formed such that a second insulating region is provided between the second electrode layer and the first side surface of the multilayered structure; a first side electrode formed on the first side surface of the multilayered structure, connected to the at least a
  • a method of manufacturing a multilayered piezoelectric element is a method of manufacturing a multilayered piezoelectric element having a multilayered structure in which at least one first electrode layer and at least one second electrode layer are alternately stacked with a piezoelectric material layer therebetween, and includes the steps of: (a) forming a first piezoelectric material layer; (b) forming a first electrode layer on the first piezoelectric material layer except for a predetermined region; (c) forming a second piezoelectric material layer on the first electrode layer; (d) forming a second electrode layer on the second piezoelectric material layer except for a predetermined region; (e) forming a third piezoelectric material layer on the second electrode layer; (f) forming a first side surface and a second side surface by dicing the formed multilayered structure to protrude at least a part of an end portion of the first electrode layer to an outer side than adjacent piezoelectric material layers on the first side surface and secure
  • the internal electrode is formed to have the end portion at least a part of which protrudes to the outer side than the adjacent piezoelectric material layers such that the internal electrode and the side electrode or the insulating film are connected to each other in a broad contact area.
  • the connection strength between the internal electrode and the side electrode or the insulating film is improved, and it becomes difficult for the side electrode or the insulating electrode to separate from the internal electrode even when the piezoelectric material layers expand and contract.
  • the reliability of the operation of piezoelectric element can be improved and the lives of the piezoelectric element and equipment having the piezoelectric element can be made longer.
  • FIG. 1 is a partially sectional perspective view showing a structure of a multilayered piezoelectric element according to the first embodiment of the present invention
  • FIG. 2 is a sectional view showing internal electrode layers formed of different plural materials
  • FIGS. 3A-3C are diagrams for explanation of a method of manufacturing the multilayered piezoelectric element according to the first embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing a configuration of a film forming apparatus according to an aerosol deposition method
  • FIG. 5 is a partially sectional perspective view showing a structure of a multilayered piezoelectric element according to the second embodiment of the present invention.
  • FIGS. 6A-6D are diagrams for explanation of a method of manufacturing the multilayered piezoelectric element according to the second embodiment of the present invention.
  • FIG. 7 is a sectional view showing a structure of a conventional multilayered piezoelectric element.
  • FIG. 1 is a partially sectional perspective view showing a structure of a multilayered piezoelectric element according to the first embodiment of the present invention.
  • the multilayered piezoelectric element is a columnar structure having a bottom surface with sides of about 200 ⁇ m to 1 mm and a height of about 300 ⁇ m to 1 mm, for example.
  • the multilayered piezoelectric element has (i) a multilayered structure including plural piezoelectric material layers 10 , at least one internal electrode layer 11 a and at least one internal electrode layer 11 b , and (ii) side electrodes 13 a and 13 b formed on a first side surface and a second side surface of the multilayered structure, respectively.
  • the multilayered piezoelectric element further has an upper electrode layer 14 and a lower electrode layer 15 .
  • the at least one internal electrode layer 11 a and at the least one internal electrode layer 11 b are alternately stacked with the piezoelectric material layer 10 therebetween.
  • the piezoelectric material layer 10 has a thickness of, for example, about 100 ⁇ m, and is formed of a compound oxide having a lead-based perovskite structure such as PZT (Pb(lead) zirconate titanate). Although five piezoelectric material layers 10 , two internal electrode layers 11 a and two internal electrode layers 11 b are shown in FIG. 1 , the number of piezoelectric material layers may be at least three, or six or more.
  • the piezoelectric material layer 10 has a dense and hard tissue because it has been formed according to an aerosol deposition method, which will be described later.
  • Each of the internal electrode layers 11 a and 11 b has a thickness of about 3 ⁇ m, for example. Insulating regions 12 a are provided between the internal electrode layers 11 a and the side electrode 13 b , and insulating regions 12 b are provided between the internal electrode layers 11 b and the side electrode 13 a . Further, at least a part of the end portion of the internal electrode layer 11 a protrudes to the outer side than the adjacent piezoelectric material layers 10 at the side of the side electrode 13 a , while at least a part of the end portion of the internal electrode layer 11 b protrudes to the outer side than the adjacent piezoelectric material layers 10 at the side of the side electrode 13 b . As shown in FIG.
  • FIG. 1 shows that the entire end portions of the internal electrode layers 11 a and 11 b protrude to the outer side than the adjacent piezoelectric material layers 10 .
  • Each of the internal electrode layers 11 a and 11 b may be formed of one kind of material, or may have a multilayer structure formed of different plural materials.
  • a metal material such as platinum (Pt) or an alloy (e.g., palladium silver) is used.
  • an electrode having a two-layer structure containing an adhesion layer 111 formed of titanium oxide (TiO 2 ) and having a thickness of about 50 nm and a conducting layer 112 formed of platinum (Pt) and having a thickness of about 3 ⁇ m is used.
  • the side electrode 13 a is connected to the internal electrode layers 11 a , and insulated from the internal electrode layers 11 b by the insulating regions 12 b . Further, the side electrode 13 b is connected to the internal electrode layers 11 b , and insulated from the internal electrode layers 11 a by the insulating regions 12 a.
  • the upper electrode 14 is connected to the side electrode 13 a , and insulated from the side electrode 13 b . Further, the lower electrode 15 is connected to the side electrode 13 b , and insulated from the side electrode 13 a .
  • Each of the upper electrode 14 and lower electrode 15 may be formed of one kind of material, or may have a multilayer structure containing an adhesion layer and a conducting layer as well as the internal electrodes 11 a and 11 b.
  • the multilayered piezoelectric element when a voltage is supplied between the upper electrode 14 and lower electrode 15 , for example, an electric field is applied to each of the piezoelectric material layers 10 . As a result, the multilayered piezoelectric element expands and contracts as a whole due to the piezoelectric effect in each piezoelectric material layer 10 . As shown in FIG. 1 , the end portions of the internal electrode layers 11 a and 11 b protruding to the outer side than the piezoelectric material layers 10 are respectively connected to the side electrodes 13 a and 13 b in broader contact areas than those in the conventional multilayered piezoelectric element as shown in FIG. 7 . Thereby, the connection strength increases in the connection portions between them, and the side electrodes 13 a and 13 b can be prevented from separating from the internal electrode layers 11 a and 11 b even when each piezoelectric material layer 10 expands and contracts.
  • FIGS. 3A-3C and 4 a method of manufacturing the multilayered piezoelectric element according to the first embodiment of the present invention will be explained by referring to FIGS. 3A-3C and 4 .
  • a multilayered structure 23 is formed by repeating formation of the piezoelectric material layer 10 , the internal electrode layer 11 a , the piezoelectric material layer 10 , and the internal electrode layer 11 b in this order on a substrate 9 .
  • FIG. 4 is a schematic diagram showing a configuration of a film forming apparatus according to the AD method.
  • the film forming apparatus has an aerosol generation chamber 1 , a raising gas nozzle 2 , a pressure regulating gas nozzle 3 , an aerosol carrier pipe 4 , a film formation chamber 5 , an exhaust pipe 6 , an injection nozzle 7 and a substrate holder 8 .
  • the raising gas nozzle 2 , the pressure regulating gas nozzle 3 and the aerosol carrier pipe 4 are disposed in the aerosol generation chamber 1 .
  • the aerosol generation chamber 1 is a container in which raw material powder is placed.
  • a container driving unit 1 a for agitating the raw material powder placed within the aerosol generation chamber 1 by providing vibration or the like to the aerosol generation chamber 1 .
  • a compressed gas cylinder for supplying a carrier gas is connected to the raising gas nozzle 2 disposed in the aerosol generation chamber 1 .
  • the raising gas nozzle 2 generates a cyclonic flow by injecting the gas supplied from the compressed gas cylinder into the aerosol generation chamber 1 . Thereby, the raw material powder placed in the aerosol generation chamber 1 is dispersed by the gas and an aerosol is generated.
  • a compressed gas cylinder for supplying a pressure regulating gas for regulating the gas pressure within the aerosol generation chamber 1 is connected to the pressure regulating gas nozzle 3 .
  • the speed of the air flow (raising gas) generated within the aerosol generation chamber 1 is controlled.
  • nitrogen (N 2 ), oxygen (O 2 ), helium (He) argon (Ar) or dry air is used as the carrier gas and the pressure regulating gas.
  • the aerosol carrier pipe 4 disposed in the aerosol generation chamber 1 carries the aerosol containing the raw material powder raised within the aerosol generation chamber 1 to the nozzle 7 disposed in the film formation chamber 5 .
  • the air within the film formation chamber 5 is exhausted by the exhaust pump 6 , and thereby, a predetermined degree of vacuum is kept.
  • the injection nozzle 7 disposed within the film formation chamber 5 has an opening having predetermined shape and size, and injects the aerosol supplied from the aerosol generation chamber 1 via the aerosol carrier pipe 4 from the opening toward the substrate 9 at a high speed.
  • the substrate holder 8 holds the substrate 9 . Further, a substrate holder driving unit 8 a for moving the substrate holder 8 in a three-dimensional manner is provided to the substrate holder 8 . Thereby, the three-dimensional relative position and relative speed between the injection nozzle 7 and the substrate 9 are controlled. By controlling the relative speed, the thickness of a film formed by one reciprocating motion can be controlled.
  • the aerosol generation chamber 1 powder of a piezoelectric material as the raw material powder is placed in the aerosol generation chamber 1 and the substrate 9 is set on the substrate holder 8 and kept at predetermined film formation temperature. Then, the substrate is moved at a predetermined speed while the film forming apparatus is driven such that the aerosol is injected from the injection nozzle 7 . Thereby, the aerosol (raw material powder) collides with the substrate 9 and cut into the substrate 9 or a structure previously deposited on the substrate 9 (referred to as “anchoring”). Further, the particles bind together on the newly formed active surfaces formed by the deformation or crushing of the raw material powder at the time of collision, and the raw material powder is deposited on the substrate.
  • an anchor part (a region formed by anchoring) formed in the boundary region between the film and the substrate or the internal electrode layer as an under layer, thus formed film strongly and closely adheres to the under layer and has an extremely dense structure because of the binding of the particles on the newly formed surfaces (mechanochemical reaction).
  • the material of the substrate or the internal electrode layer as the under layer a material having such hardness that the deformation or crushing of the raw material powder occurs due to the collision is used.
  • the substrate 9 for example, an YSZ (yttrium-stabilized zirconia) substrate, SUS substrate or the like is used.
  • the internal electrode layers 11 a are formed so as to cross a dicing line as shown by a broken line at the side of a side surface 23 a of the multilayered structure and not to reach a dicing line at the side of a side surface 23 b of the multilayered structure.
  • the insulating regions 12 a are provided.
  • the internal electrode layers 11 b are formed so as to cross the dicing line as shown by the broken line at the side of the side surface 23 b of the multilayered structure and not to reach the dicing line at the side of the side surface 23 a of the multilayered structure.
  • the insulating regions 12 b are provided.
  • the material of the internal electrode layers 11 a and 11 b As the material of the internal electrode layers 11 a and 11 b , a material having ductility and hardness to some degree is used. In the embodiment, ductility is required because the end portions of the internal electrode layers 11 a and 11 b are protruded to the side surfaces by dicing the multilayered structure 23 as described below. Further, hardness is required because the internal electrode layers 11 a and 11 b become under layers when the piezoelectric material layers 10 are formed and need sufficient hardness enough to endure the collision of the raw material powder as described above.
  • the property of the material may somewhat differ depending on the dicing condition or the like, and a metal thin film of platinum (Pt), copper (Cu), nickel (Ni) or the like formed by using a film formation technology such as sputtering, plating or the like may be used as the internal electrode layers 11 a and 11 b .
  • a platinum thin film formed by sputtering is used.
  • the multilayered structure 23 is diced along the dicing lines as shown in FIG. 3A .
  • the end portions 25 of the internal electrode layers 11 a and 11 b protrude to the outer side than the piezoelectric material layers 10 at the side surfaces of the diced multilayered structure 24 .
  • the reason why the end portions 25 protrude is that the internal electrode layers 11 a and 11 b have higher hardness than that of the piezoelectric material layers 10 , and they remains more easily than the piezoelectric material layers 10 when the multilayered structure 24 is cut.
  • the substrate 9 may be separated from the multilayered structure 24 .
  • the side electrodes 13 a and 13 b are formed in the regions other than insulating regions 27 on the side surfaces of the diced multilayered structure 24 .
  • the insulating regions 27 are provided for insulting the side electrodes 13 a and 13 b from the lower electrode layer 15 and the upper electrode layer 14 ( FIG. 1 ), respectively.
  • the side electrodes 13 a and 13 b are formed by forming a resist mask on the insulating regions 27 and performing sputtering or plating. BY using such a method of forming a film, the side electrodes 13 a and 13 b can be formed so as to cover the protruding end portions 25 .
  • the upper electrode layer 14 and the lower electrode layer 15 as shown in FIG. 1 may be formed simultaneously with or after the formation of the side electrodes 13 a and 13 b . As described above, the multilayered piezoelectric element according to the embodiment is completed.
  • the tensile strength of the side electrodes was improved about twice the case of forming the internal electrode layers by screen printing.
  • the screen printing is general as a method of forming electrodes. Since the formed electrodes are soft, the end portions of the internal electrode layers do not protrude to the outside from the multilayered part even when the multilayered structure is diced.
  • FIG. 5 is a partially sectional perspective view showing a structure of the multilayered piezoelectric element according to the second embodiment.
  • the second embodiment is different from the first embodiment in the point where the internal electrode layers are insulated from the side electrodes by covering the end portions of the internal electrode layers with insulating films, while the internal electrode layers are insulated from the side electrodes by providing the insulating regions in the first embodiment.
  • the multilayered piezoelectric element has (i) a multilayered structure including plural piezoelectric material layers 30 , at least one internal electrode layer 31 a and at least one internal electrode layer 31 b , (ii) insulating films 32 a and 32 b formed on the first and second side surfaces of the multilayered structure, respectively, and (iii) side electrodes 33 a and 33 b further formed thereon.
  • the multilayered piezoelectric element further has an upper electrode layer 34 and a lower electrode layer 35 .
  • the at least one internal electrode layer 31 a and the at least one internal electrode layer 31 b are alternately stacked with the piezoelectric material layer 30 therebetween.
  • the internal electrode layers 31 a and 31 b are formed on the entire surfaces of the piezoelectric material layers 30 .
  • at least apart of the end portions of the internal electrode layers 31 a and 31 b protrude to the outer side than the adjacent piezoelectric material layers 30 at the sides of the side electrodes 33 a and 33 b .
  • FIG. 5 shows that the entire end portions of the internal electrode layers 31 a and 31 b protrude to the outer side than the adjacent piezoelectric material layers 30 .
  • the end portions of the internal electrode layers 31 a are covered so as to be buried in the side electrode 33 a , while the insulating films 32 b are formed so as to cover the end portions of the internal electrode layers 31 b .
  • the end portions of the internal electrode layers 31 b are covered so as to be buried in the side electrode 33 b , while the insulating films 32 a are formed so as to cover the end portions of the internal electrode layers 31 a.
  • the side electrodes 33 a are connected to the internal electrode layers 31 a , and insulated from the internal electrode layers 31 b .
  • the side electrodes 33 b are connected to the internal electrode layers 31 b , and insulated from the internal electrode layers 31 a.
  • the side electrodes 33 a and 33 b or insulating films 32 a and 32 b are formed on the end portions of the internal electrode layers 31 a and 31 b that protrude to the outer side than the adjacent piezoelectric material layers 30 , respectively, and therefore, the contact areas between the internal electrode layers and the side electrodes or insulating films become broader. As a result, the contact strength between them increases, and the side electrodes 33 a and 33 b or insulating films 32 a and 32 b can be prevented from separating from the internal electrode layers 31 a and 31 b even when the piezoelectric material layers 30 expand and contract when the piezoelectric element is driven.
  • FIGS. 6A-6D a method of manufacturing the multilayered piezoelectric element according to the second embodiment of the present invention will be explained by referring to FIGS. 6A-6D .
  • a multilayered structure 42 is formed by alternately stacking the piezoelectric material layers 30 and the internal electrode layers 31 on the substrate 9 .
  • the piezoelectric material layers 30 are formed by using the AD method as well as in the first embodiment.
  • the internal electrode layers 31 are formed by employing the same material as that explained in the first embodiment by sputtering or plating.
  • the multilayered structure 42 is diced along dicing lines as shown in FIG. 6A . Thereby, as shown in FIG. 6B , a shaped multilayered structure 43 is obtained. End portions 44 of the internal electrode layers 31 protruding to the outer side than the piezoelectric material layers 30 are formed at the side surfaces of the diced multilayered structure 43 . At this step, the substrate 9 may be separated from the multilayered structure 43 .
  • the insulating films 32 a are formed so as to cover every other end portion 44 of the internal electrode layers 31 on the side surface 43 b of the diced multilayered structure 43 .
  • the insulating films 32 b are formed so as to cover every other end portion 44 of the internal electrode layers 31 on the side surface 43 a of the diced multilayered structure 43 .
  • the insulating films 32 a and 32 b are formed in a staggered manner.
  • the internal electrode layers 31 having the end portions 44 covered by the insulating films 32 a correspond to internal electrode layers 31 a as shown in FIG. 5
  • the internal electrode layers 31 having the end portions 44 covered by the insulating films 32 b correspond to internal electrode layers 31 b as shown in FIG. 5 .
  • These insulating films 32 a and 32 b are formed by attaching glass powder having a softening point of, for example, about 500° C. to about 700° C. to the end portions 44 by electrophoresis (electrodeposition), or depositing paste containing glass powder onto the end portions 44 by screen printing.
  • the insulating films 32 a and 32 b may be formed according to the AD method by spraying an aerosol in which powder of an insulating material is dispersed toward the end portions 44 of the internal electrode layers 31 .
  • the side electrodes 33 a and 33 b are formed in the regions other than insulating regions 47 on the side surfaces of the diced multilayered structure 43 by sputtering or plating. Furthermore, the upper electrode layer 34 and lower electrode layer 35 as shown in FIG. 5 may be formed. As described above, the multilayered piezoelectric element according to the embodiment is completed.
  • multilayered piezoelectric elements are used as piezoelectric pumps, piezoelectric actuators, ultrasonic transducers for transmitting and receiving ultrasonic waves in an ultrasonic probe, and so on.
  • a multilayered piezoelectric element may be singly used, or multilayered piezoelectric elements may be arranged in a one- or two-dimensional manner for use as a piezoelectric element array.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
US11/604,699 2005-11-28 2006-11-28 Multilayered piezoelectric element and method of manufacturing the same Abandoned US20070120448A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/126,459 US7765660B2 (en) 2005-11-28 2008-05-23 Method of manufacturing a multilayered piezoelectric element having internal electrodes and side electrodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-342915 2005-11-28
JP2005342915A JP2007149995A (ja) 2005-11-28 2005-11-28 積層型圧電素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/126,459 Division US7765660B2 (en) 2005-11-28 2008-05-23 Method of manufacturing a multilayered piezoelectric element having internal electrodes and side electrodes

Publications (1)

Publication Number Publication Date
US20070120448A1 true US20070120448A1 (en) 2007-05-31

Family

ID=38086753

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/604,699 Abandoned US20070120448A1 (en) 2005-11-28 2006-11-28 Multilayered piezoelectric element and method of manufacturing the same
US12/126,459 Expired - Fee Related US7765660B2 (en) 2005-11-28 2008-05-23 Method of manufacturing a multilayered piezoelectric element having internal electrodes and side electrodes

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/126,459 Expired - Fee Related US7765660B2 (en) 2005-11-28 2008-05-23 Method of manufacturing a multilayered piezoelectric element having internal electrodes and side electrodes

Country Status (2)

Country Link
US (2) US20070120448A1 (enrdf_load_stackoverflow)
JP (1) JP2007149995A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130255049A1 (en) * 2008-06-19 2013-10-03 Epcos Ag Piezoelectric Component and Method for Producing an Electrical Contact
US20170263383A1 (en) * 2016-03-09 2017-09-14 Murata Manufacturing Co., Ltd. Electronic component and manufacturing method for the same
US20190312190A1 (en) * 2018-04-04 2019-10-10 Tdk Corporation Piezoelectric element and vibrating device
SE2251213A1 (en) * 2022-10-17 2024-02-20 Precibeo Ab A drive element with two separate monolithic actuators for an electromechanical motor
CN119779539A (zh) * 2024-12-25 2025-04-08 宁波大学 一种基于阵列式pvdf的压电三维力触觉传感器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4593912B2 (ja) * 2003-12-24 2010-12-08 京セラ株式会社 積層型圧電素子およびその製法、並びに噴射装置
JP5536310B2 (ja) * 2008-03-31 2014-07-02 富士フイルム株式会社 積層型圧電素子及びその製造方法
CN102813549B (zh) * 2012-08-27 2014-11-05 杭州电子科技大学 用于超声手术器械的高功率密度压电换能器
DE102012218755B4 (de) * 2012-10-15 2018-07-05 Continental Automotive Gmbh Verfahren zum Herstellen eines elektronischen Bauelements als Stapel und als Stapel ausgebildetes elektronisches Bauelement
CN103258950A (zh) * 2013-05-14 2013-08-21 三星高新电机（天津）有限公司 压电陶瓷元件
DE102013114016A1 (de) * 2013-12-13 2015-06-18 Bürkert Werke GmbH Verfahren zur Herstellung eines Piezostapels
JP6728260B2 (ja) * 2018-03-22 2020-07-22 株式会社東芝 積層型超音波トランスデューサ及び超音波検査装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845399A (en) * 1986-08-28 1989-07-04 Nippon Soken, Inc. Laminated piezoelectric transducer
US5945770A (en) * 1997-08-20 1999-08-31 Acuson Corporation Multilayer ultrasound transducer and the method of manufacture thereof
US6166006A (en) * 1997-12-19 2000-12-26 Takeda Chemical Industries, Ltd. Anilide derivative, production and use thereof
US6452312B1 (en) * 1998-12-18 2002-09-17 Denso Corporation Piezoelectric laminate body
US20030168945A1 (en) * 2000-06-07 2003-09-11 Dietmar Birgel Electromechanical transducer
US6774542B2 (en) * 2002-02-15 2004-08-10 Oki Electric Industry Co., Ltd. Saw device
US6784600B2 (en) * 2002-05-01 2004-08-31 Koninklijke Philips Electronics N.V. Ultrasonic membrane transducer for an ultrasonic diagnostic probe
US6800984B2 (en) * 2001-06-12 2004-10-05 Physik Instrumente (Pi) Gmbh & Co. Kg Piezo linear drive with a group of piezo actuator stacks as well as method for operating such a drive
US6891313B1 (en) * 1999-08-06 2005-05-10 Robert Bosch Gmbh Electrode contact for a piezoceramic actuator and method for producing same
US7126261B2 (en) * 2002-06-10 2006-10-24 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device and method for manufacturing the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0740613B2 (ja) 1983-12-05 1995-05-01 株式会社日本自動車部品総合研究所 積層型圧電体の製造方法
JPH03155176A (ja) 1989-11-14 1991-07-03 Toyota Motor Corp 積層型圧電素子の製造方法
JP2508323B2 (ja) 1989-12-15 1996-06-19 トヨタ自動車株式会社 積層型圧電アクチュエ―タの製造方法
JPH03224281A (ja) 1990-01-30 1991-10-03 Toyota Motor Corp 圧電積層体の製造方法
DE4130486A1 (de) 1991-08-23 1993-02-25 Wolff Walsrode Ag 5-schichtige, coextrudierte biaxial gereckte schlauchfolie mit mindestens 3 pa-schichten
JPH0786655A (ja) 1993-09-14 1995-03-31 Nikon Corp 積層型電気・歪変換素子および積層型セラミックアクチュエータ
JPH07226543A (ja) 1994-02-09 1995-08-22 Ngk Spark Plug Co Ltd 積層型圧電アクチュエータ
JP3155176B2 (ja) 1995-08-09 2001-04-09 住友電装株式会社 コネクタ
JPH10290031A (ja) * 1997-04-11 1998-10-27 Nissan Motor Co Ltd 積層型圧電アクチュエータおよびその製造方法
JPH11195818A (ja) 1998-01-05 1999-07-21 Nissan Motor Co Ltd 積層型圧電アクチュエータおよびその製造方法
JP3185884B2 (ja) 1999-01-11 2001-07-11 日本電気株式会社 オブジェクト指向プログラム性能予測方法
KR20010072858A (ko) 1999-06-23 2001-07-31 클라우스 포스, 게오르그 뮐러 개선된 전극 접점을 구비한 압전 다층 액츄에이터와 그제조방법
JP2003046157A (ja) 2001-08-01 2003-02-14 Kyocera Corp 積層型圧電素子及びその製法
JP3909276B2 (ja) 2002-08-26 2007-04-25 京セラ株式会社 積層型圧電素子及び噴射装置
JP4290946B2 (ja) * 2002-08-29 2009-07-08 京セラ株式会社 積層型圧電素子及び噴射装置
JP3929858B2 (ja) 2002-09-04 2007-06-13 京セラ株式会社 積層型圧電素子
JP2004186507A (ja) * 2002-12-04 2004-07-02 Denso Corp 積層型圧電素子及びその製造方法
JP4483275B2 (ja) * 2003-02-05 2010-06-16 株式会社デンソー 積層型圧電素子及びその製造方法
JP4908746B2 (ja) * 2003-09-01 2012-04-04 富士フイルム株式会社 積層構造体及び圧電アクチュエータ、並びに、それらの製造方法
US7156938B2 (en) * 2003-11-11 2007-01-02 General Electric Company Method for making multi-layer ceramic acoustic transducer
JP4729260B2 (ja) * 2004-02-18 2011-07-20 富士フイルム株式会社 積層構造体及びその製造方法
JP4516327B2 (ja) * 2004-02-18 2010-08-04 富士フイルム株式会社 積層構造体の製造方法
JP4703127B2 (ja) * 2004-03-31 2011-06-15 ルネサスエレクトロニクス株式会社 半導体ウェーハ、半導体チップおよびその製造方法
JP2006093449A (ja) * 2004-09-24 2006-04-06 Fuji Photo Film Co Ltd 積層構造体及び積層構造体アレイ、並びに、それらの製造方法
JP2006093448A (ja) * 2004-09-24 2006-04-06 Fuji Photo Film Co Ltd 積層構造体及び積層構造体アレイ、並びに、それらの製造方法
JP4498300B2 (ja) 2006-03-27 2010-07-07 京セラ株式会社 積層型圧電素子の製造方法及び積層型圧電素子

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845399A (en) * 1986-08-28 1989-07-04 Nippon Soken, Inc. Laminated piezoelectric transducer
US5945770A (en) * 1997-08-20 1999-08-31 Acuson Corporation Multilayer ultrasound transducer and the method of manufacture thereof
US6166006A (en) * 1997-12-19 2000-12-26 Takeda Chemical Industries, Ltd. Anilide derivative, production and use thereof
US6452312B1 (en) * 1998-12-18 2002-09-17 Denso Corporation Piezoelectric laminate body
US6891313B1 (en) * 1999-08-06 2005-05-10 Robert Bosch Gmbh Electrode contact for a piezoceramic actuator and method for producing same
US20030168945A1 (en) * 2000-06-07 2003-09-11 Dietmar Birgel Electromechanical transducer
US6800984B2 (en) * 2001-06-12 2004-10-05 Physik Instrumente (Pi) Gmbh & Co. Kg Piezo linear drive with a group of piezo actuator stacks as well as method for operating such a drive
US6774542B2 (en) * 2002-02-15 2004-08-10 Oki Electric Industry Co., Ltd. Saw device
US6784600B2 (en) * 2002-05-01 2004-08-31 Koninklijke Philips Electronics N.V. Ultrasonic membrane transducer for an ultrasonic diagnostic probe
US7126261B2 (en) * 2002-06-10 2006-10-24 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device and method for manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130255049A1 (en) * 2008-06-19 2013-10-03 Epcos Ag Piezoelectric Component and Method for Producing an Electrical Contact
US9490417B2 (en) * 2008-06-19 2016-11-08 Epcos Ag Method for producing an electrical contact
US20170263383A1 (en) * 2016-03-09 2017-09-14 Murata Manufacturing Co., Ltd. Electronic component and manufacturing method for the same
US10418180B2 (en) * 2016-03-09 2019-09-17 Murata Manufacturing Co., Ltd. Electronic component and manufacturing method for the same
US20190312190A1 (en) * 2018-04-04 2019-10-10 Tdk Corporation Piezoelectric element and vibrating device
US11930713B2 (en) * 2018-04-04 2024-03-12 Tdk Corporation Piezoelectric element and vibrating device
SE2251213A1 (en) * 2022-10-17 2024-02-20 Precibeo Ab A drive element with two separate monolithic actuators for an electromechanical motor
SE545844C2 (en) * 2022-10-17 2024-02-20 Precibeo Ab A drive element with two separate monolithic actuators for an electromechanical motor
CN119779539A (zh) * 2024-12-25 2025-04-08 宁波大学 一种基于阵列式pvdf的压电三维力触觉传感器

Also Published As

Publication number Publication date
US20080222866A1 (en) 2008-09-18
JP2007149995A (ja) 2007-06-14
US7765660B2 (en) 2010-08-03

Similar Documents

Publication Publication Date Title
US7765660B2 (en) Method of manufacturing a multilayered piezoelectric element having internal electrodes and side electrodes
US7454820B2 (en) Method of manufacturing a plurality of laminated structures
US7673385B2 (en) Laminated structure method
JP6550387B2 (ja) 多層薄膜圧電素子及びその製造方法
US7581295B2 (en) Piezoelectric element and method of manufacturing the same
US20070161896A1 (en) Capacitive micromachined ultrasonic transducer (cMUT) and its production method
JP5510448B2 (ja) 圧電発電装置
US6809459B2 (en) Piezoelectric/electrostrictive device and method of manufacturing same
US8106566B2 (en) Piezoelectric component with outer contacting, having gas-phase deposition, method for manufacturing component and use of component
JP2004056085A (ja) 圧電アクチュエータユニット、及び、それを用いた液体噴射ヘッド、並びに、圧電素子、及び、その製造方法
CN105375815A (zh) 压电驱动装置、机器人以及它们的驱动方法
CN100438991C (zh) 薄膜超声转换器阵列
US20090243442A1 (en) Multilayered piezoelectric element and method of manufacturing the same
US7199509B2 (en) Multilayered structure and method of manufacturing the same, and ultrasonic transducer
JP4804760B2 (ja) 積層型圧電構造体の製造方法
JP2002319716A (ja) 圧電セラミック多層アクチュエーターおよびその製造方法
JP4908746B2 (ja) 積層構造体及び圧電アクチュエータ、並びに、それらの製造方法
JP2005102181A (ja) 積層構造体及びその製造方法、並びに、超音波トランスデューサアレイ
US20050035688A1 (en) Piezoelectric/electrostrictive device and method of manufacturing same

Legal Events

Date Code Title Description
AS Assignment

Owner name: FUJIFILM CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MIYOSHI, TETSU;REEL/FRAME:018639/0402

Effective date: 20061107

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION