US20070032081A1 - Edge ring assembly with dielectric spacer ring - Google Patents

Edge ring assembly with dielectric spacer ring Download PDF

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Publication number
US20070032081A1
US20070032081A1 US11/198,296 US19829605A US2007032081A1 US 20070032081 A1 US20070032081 A1 US 20070032081A1 US 19829605 A US19829605 A US 19829605A US 2007032081 A1 US2007032081 A1 US 2007032081A1
Authority
US
United States
Prior art keywords
dielectric spacer
ring
substrate
spacer ring
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/198,296
Other languages
English (en)
Inventor
Jeremy Chang
Andreas Fischer
Babak Kadkhodayan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/198,296 priority Critical patent/US20070032081A1/en
Assigned to LAM RESEARCH CORPORATION reassignment LAM RESEARCH CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, JEREMY, FISCHER, ANDREAS, KADKHODAYAN, BABAK
Priority to KR1020087003093A priority patent/KR101432832B1/ko
Priority to CN200680028968.9A priority patent/CN101238553B/zh
Priority to PCT/US2006/028844 priority patent/WO2007019049A2/en
Priority to TW095129053A priority patent/TWI417957B/zh
Publication of US20070032081A1 publication Critical patent/US20070032081A1/en
Priority to US12/415,114 priority patent/US8500953B2/en
Priority to US13/933,785 priority patent/US8911589B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49718—Repairing
    • Y10T29/49721—Repairing with disassembling
    • Y10T29/4973—Replacing of defective part

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
US11/198,296 2005-08-08 2005-08-08 Edge ring assembly with dielectric spacer ring Abandoned US20070032081A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/198,296 US20070032081A1 (en) 2005-08-08 2005-08-08 Edge ring assembly with dielectric spacer ring
KR1020087003093A KR101432832B1 (ko) 2005-08-08 2006-07-24 유전체 스페이서 링을 갖는 에지 링 어셈블리
CN200680028968.9A CN101238553B (zh) 2005-08-08 2006-07-24 带有介电间隔环的边缘环组件
PCT/US2006/028844 WO2007019049A2 (en) 2005-08-08 2006-07-24 Edge ring assembly with dielectric spacer ring
TW095129053A TWI417957B (zh) 2005-08-08 2006-08-08 具有介電間隔環之邊緣環總成
US12/415,114 US8500953B2 (en) 2005-08-08 2009-03-31 Edge ring assembly with dielectric spacer ring
US13/933,785 US8911589B2 (en) 2005-08-08 2013-07-02 Edge ring assembly with dielectric spacer ring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/198,296 US20070032081A1 (en) 2005-08-08 2005-08-08 Edge ring assembly with dielectric spacer ring

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/415,114 Division US8500953B2 (en) 2005-08-08 2009-03-31 Edge ring assembly with dielectric spacer ring

Publications (1)

Publication Number Publication Date
US20070032081A1 true US20070032081A1 (en) 2007-02-08

Family

ID=37718175

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/198,296 Abandoned US20070032081A1 (en) 2005-08-08 2005-08-08 Edge ring assembly with dielectric spacer ring
US12/415,114 Active 2026-03-28 US8500953B2 (en) 2005-08-08 2009-03-31 Edge ring assembly with dielectric spacer ring
US13/933,785 Active 2025-08-11 US8911589B2 (en) 2005-08-08 2013-07-02 Edge ring assembly with dielectric spacer ring

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/415,114 Active 2026-03-28 US8500953B2 (en) 2005-08-08 2009-03-31 Edge ring assembly with dielectric spacer ring
US13/933,785 Active 2025-08-11 US8911589B2 (en) 2005-08-08 2013-07-02 Edge ring assembly with dielectric spacer ring

Country Status (5)

Country Link
US (3) US20070032081A1 (ko)
KR (1) KR101432832B1 (ko)
CN (1) CN101238553B (ko)
TW (1) TWI417957B (ko)
WO (1) WO2007019049A2 (ko)

Cited By (38)

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US20070059938A1 (en) * 2005-09-15 2007-03-15 Hanako Kida Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
US20070190792A1 (en) * 2006-02-10 2007-08-16 Tokyo Electron Limited Method and system for selectively etching a dielectric material relative to silicon
US20090000744A1 (en) * 2007-06-28 2009-01-01 Rajinder Dhindsa Edge ring arrangements for substrate processing
WO2009006062A1 (en) * 2007-06-28 2009-01-08 Lam Research Corporation Methods and apparatus for substrate processing
US20090266299A1 (en) * 2008-04-24 2009-10-29 Applied Materials, Inc. Low profile process kit
US20100003824A1 (en) * 2008-07-07 2010-01-07 Lam Research Corporation Clamped showerhead electrode assembly
US20100000683A1 (en) * 2008-07-07 2010-01-07 Lam Research Corporation Showerhead electrode
EP2149899A1 (en) * 2007-06-22 2010-02-03 Ulvac, Inc. Etching method and etching apparatus
US20100040768A1 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
US20100252197A1 (en) * 2009-04-07 2010-10-07 Lam Reseach Corporation Showerhead electrode with centering feature
US20110070740A1 (en) * 2009-09-18 2011-03-24 Lam Research Corporation Clamped monolithic showerhead electrode
US20110083809A1 (en) * 2009-10-13 2011-04-14 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly
US20110132874A1 (en) * 2009-12-03 2011-06-09 Richard Gottscho Small plasma chamber systems and methods
US20110212624A1 (en) * 2010-02-26 2011-09-01 Hudson Eric A System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8268184B2 (en) 2010-06-29 2012-09-18 Tokyo Electron Limited Etch process for reducing silicon recess
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20130075037A1 (en) * 2008-03-21 2013-03-28 Tokyo Electron Limited Plasma processing apparatus
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
WO2014014822A1 (en) * 2012-07-17 2014-01-23 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US20170301566A1 (en) * 2007-01-26 2017-10-19 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher
US20180005832A1 (en) * 2016-06-30 2018-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device, Method and Tool of Manufacture
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
CN110546733A (zh) * 2017-03-31 2019-12-06 马特森技术有限公司 在处理腔室中防止工件上的材料沉积
CN111354672A (zh) * 2018-12-21 2020-06-30 夏泰鑫半导体(青岛)有限公司 静电卡盘及等离子体加工装置
US11043406B2 (en) 2018-04-18 2021-06-22 Applied Materials, Inc. Two piece shutter disk assembly with self-centering feature
CN113039626A (zh) * 2019-02-01 2021-06-25 应用材料公司 边缘环的温度及偏压控制
US11251028B2 (en) 2018-05-12 2022-02-15 Applied Materials, Inc. Pre-clean chamber with integrated shutter garage
US11270905B2 (en) * 2019-07-01 2022-03-08 Applied Materials, Inc. Modulating film properties by optimizing plasma coupling materials
US20220293397A1 (en) * 2021-03-10 2022-09-15 Applied Materials, Inc. Substrate edge ring that extends process environment beyond substrate diameter

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
KR101588482B1 (ko) * 2008-07-07 2016-01-25 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
KR20120116923A (ko) * 2009-11-30 2012-10-23 램 리써치 코포레이션 각진 측벽을 가진 정전 척
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US20120318455A1 (en) * 2011-06-14 2012-12-20 Andreas Fischer Passive compensation for temperature-dependent wafer gap changes in plasma processing systems
CN103165374B (zh) * 2011-12-08 2017-05-10 中微半导体设备(上海)有限公司 一种等离子体处理装置及应用于等离子处理装置的边缘环
CN103187232B (zh) * 2011-12-28 2015-09-16 中微半导体设备(上海)有限公司 一种减少晶片背面生成聚合物的聚焦环
EP3427830B1 (en) 2012-10-24 2021-06-23 Genmark Diagnostics Inc. Integrated multiplex target analysis
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
KR101594928B1 (ko) * 2014-03-06 2016-02-17 피에스케이 주식회사 기판 처리 장치 및 방법
EP3374681A4 (en) 2015-11-11 2019-07-24 Greene, Tweed Technologies, Inc. SEALING RINGS AND SEAL RING ASSEMBLIES FOR FINAL APPLICATIONS AT HIGH TEMPERATURE
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
KR101927936B1 (ko) * 2017-06-09 2018-12-11 세메스 주식회사 기판 처리 장치
KR102505152B1 (ko) * 2017-12-15 2023-02-28 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
KR20230106754A (ko) * 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
CN109767968B (zh) * 2018-12-17 2021-06-08 北京北方华创微电子装备有限公司 下电极结构及反应腔室
US11018046B2 (en) 2019-04-12 2021-05-25 Samsung Electronics Co., Ltd. Substrate processing apparatus including edge ring
WO2020257095A1 (en) * 2019-06-18 2020-12-24 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
CN113097038B (zh) * 2021-02-25 2022-07-15 长江存储科技有限责任公司 刻蚀装置

Citations (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20030013315A1 (en) * 1998-09-23 2003-01-16 Samsung Electronics Co., Ltd. Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
US6552296B2 (en) * 1997-06-26 2003-04-22 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6551939B2 (en) * 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US20030075274A1 (en) * 1995-09-01 2003-04-24 Halpin Michael W. Wafer support system
US6579465B1 (en) * 1998-03-17 2003-06-17 Anneal Corporation Plasma surface treatment method and resulting device
US6630407B2 (en) * 2001-03-30 2003-10-07 Lam Research Corporation Plasma etching of organic antireflective coating
US6641698B2 (en) * 2000-12-22 2003-11-04 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6834656B2 (en) * 2001-05-23 2004-12-28 Axcelis Technology, Inc. Plasma process for removing polymer and residues from substrates
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US6852636B1 (en) * 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US7014788B1 (en) * 1998-06-10 2006-03-21 Jim Mitzel Surface treatment method and equipment
US20070000614A1 (en) * 2003-03-21 2007-01-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911629A (ja) 1982-07-12 1984-01-21 Toshiba Corp 表面清浄化方法
WO1997011482A2 (en) 1995-09-05 1997-03-27 Lsi Logic Corporation Removal of halogens and photoresist from wafers
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
CN101996843B (zh) * 2003-01-07 2013-05-01 东京毅力科创株式会社 等离子体处理装置及聚焦环
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
JP4588391B2 (ja) 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 アッシング方法及びアッシング装置
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring

Patent Citations (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US20030075274A1 (en) * 1995-09-01 2003-04-24 Halpin Michael W. Wafer support system
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6552296B2 (en) * 1997-06-26 2003-04-22 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6551939B2 (en) * 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US6579465B1 (en) * 1998-03-17 2003-06-17 Anneal Corporation Plasma surface treatment method and resulting device
US7014788B1 (en) * 1998-06-10 2006-03-21 Jim Mitzel Surface treatment method and equipment
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US20030013315A1 (en) * 1998-09-23 2003-01-16 Samsung Electronics Co., Ltd. Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6852636B1 (en) * 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6824627B2 (en) * 2000-10-13 2004-11-30 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6641698B2 (en) * 2000-12-22 2003-11-04 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6630407B2 (en) * 2001-03-30 2003-10-07 Lam Research Corporation Plasma etching of organic antireflective coating
US6834656B2 (en) * 2001-05-23 2004-12-28 Axcelis Technology, Inc. Plasma process for removing polymer and residues from substrates
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20070000614A1 (en) * 2003-03-21 2007-01-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing

Cited By (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070059938A1 (en) * 2005-09-15 2007-03-15 Hanako Kida Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
US20070190792A1 (en) * 2006-02-10 2007-08-16 Tokyo Electron Limited Method and system for selectively etching a dielectric material relative to silicon
US7393788B2 (en) 2006-02-10 2008-07-01 Cook Julie A Method and system for selectively etching a dielectric material relative to silicon
US20170301566A1 (en) * 2007-01-26 2017-10-19 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher
US10832923B2 (en) * 2007-01-26 2020-11-10 Lam Research Corporation Lower plasma-exclusion-zone rings for a bevel etcher
US10811282B2 (en) 2007-01-26 2020-10-20 Lam Research Corporation Upper plasma-exclusion-zone rings for a bevel etcher
EP2149899A1 (en) * 2007-06-22 2010-02-03 Ulvac, Inc. Etching method and etching apparatus
EP2149899A4 (en) * 2007-06-22 2010-05-26 Ulvac Inc METHOD AND METERING DEVICE
US20100213170A1 (en) * 2007-06-22 2010-08-26 Ulvac, Inc. Etching method and etching apparatus
US7758764B2 (en) 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
KR101155837B1 (ko) * 2007-06-28 2012-06-21 램 리써치 코포레이션 기판 프로세싱용 에지 링 배열
WO2009006038A1 (en) * 2007-06-28 2009-01-08 Lam Research Corporation Edge ring arrangements for substrate processing
US20090071938A1 (en) * 2007-06-28 2009-03-19 Rajinder Dhindsa Methods and apparatus for substrate processing
US9184074B2 (en) * 2007-06-28 2015-11-10 Lam Research Corporation Apparatus and methods for edge ring implementation for substrate processing
KR101513752B1 (ko) 2007-06-28 2015-04-20 램 리써치 코포레이션 기판 프로세싱을 위한 방법 및 장치
WO2009006062A1 (en) * 2007-06-28 2009-01-08 Lam Research Corporation Methods and apparatus for substrate processing
US7837827B2 (en) 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
US20110070743A1 (en) * 2007-06-28 2011-03-24 Rajinder Dhindsa Apparatus and methods for edge ring implementation for substrate processing
US20090000744A1 (en) * 2007-06-28 2009-01-01 Rajinder Dhindsa Edge ring arrangements for substrate processing
US8211324B2 (en) 2007-06-28 2012-07-03 Lam Research Corporation Methods and arrangements for controlling plasma processing parameters
US8651049B2 (en) * 2008-03-21 2014-02-18 Tokyo Electron Limited Plasma processing apparatus
TWI494994B (zh) * 2008-03-21 2015-08-01 Tokyo Electron Ltd Plasma processing device
US20130075037A1 (en) * 2008-03-21 2013-03-28 Tokyo Electron Limited Plasma processing apparatus
US20090266299A1 (en) * 2008-04-24 2009-10-29 Applied Materials, Inc. Low profile process kit
CN102017122A (zh) * 2008-04-24 2011-04-13 应用材料股份有限公司 低轮廓性的工艺套组
US8409355B2 (en) * 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US20100003824A1 (en) * 2008-07-07 2010-01-07 Lam Research Corporation Clamped showerhead electrode assembly
US20100000683A1 (en) * 2008-07-07 2010-01-07 Lam Research Corporation Showerhead electrode
US8313805B2 (en) 2008-07-07 2012-11-20 Lam Research Corporation Clamped showerhead electrode assembly
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US20100040768A1 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
US20100252197A1 (en) * 2009-04-07 2010-10-07 Lam Reseach Corporation Showerhead electrode with centering feature
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8536071B2 (en) 2009-04-10 2013-09-17 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20110070740A1 (en) * 2009-09-18 2011-03-24 Lam Research Corporation Clamped monolithic showerhead electrode
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US20110083809A1 (en) * 2009-10-13 2011-04-14 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly
US10262834B2 (en) 2009-10-13 2019-04-16 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly
US9245716B2 (en) 2009-10-13 2016-01-26 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly
US20110132874A1 (en) * 2009-12-03 2011-06-09 Richard Gottscho Small plasma chamber systems and methods
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9911578B2 (en) 2009-12-03 2018-03-06 Lam Research Corporation Small plasma chamber systems and methods
US9735020B2 (en) 2010-02-26 2017-08-15 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US20110212624A1 (en) * 2010-02-26 2011-09-01 Hudson Eric A System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8268184B2 (en) 2010-06-29 2012-09-18 Tokyo Electron Limited Etch process for reducing silicon recess
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9252002B2 (en) 2012-07-17 2016-02-02 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
WO2014014822A1 (en) * 2012-07-17 2014-01-23 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US10163642B2 (en) * 2016-06-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method and tool of manufacture
US20180005832A1 (en) * 2016-06-30 2018-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device, Method and Tool of Manufacture
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
CN110546733B (zh) * 2017-03-31 2022-10-11 玛特森技术公司 在处理腔室中防止工件上的材料沉积
CN110546733A (zh) * 2017-03-31 2019-12-06 马特森技术有限公司 在处理腔室中防止工件上的材料沉积
US11251026B2 (en) * 2017-03-31 2022-02-15 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
US11043406B2 (en) 2018-04-18 2021-06-22 Applied Materials, Inc. Two piece shutter disk assembly with self-centering feature
US11251028B2 (en) 2018-05-12 2022-02-15 Applied Materials, Inc. Pre-clean chamber with integrated shutter garage
CN111354672A (zh) * 2018-12-21 2020-06-30 夏泰鑫半导体(青岛)有限公司 静电卡盘及等离子体加工装置
CN113039626A (zh) * 2019-02-01 2021-06-25 应用材料公司 边缘环的温度及偏压控制
US11810768B2 (en) 2019-02-01 2023-11-07 Applied Materials, Inc. Temperature and bias control of edge ring
US11270905B2 (en) * 2019-07-01 2022-03-08 Applied Materials, Inc. Modulating film properties by optimizing plasma coupling materials
US20220293397A1 (en) * 2021-03-10 2022-09-15 Applied Materials, Inc. Substrate edge ring that extends process environment beyond substrate diameter

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US8500953B2 (en) 2013-08-06
US20090186487A1 (en) 2009-07-23
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WO2007019049A2 (en) 2007-02-15
TW200715402A (en) 2007-04-16
US20130292056A1 (en) 2013-11-07
CN101238553B (zh) 2014-07-02
US8911589B2 (en) 2014-12-16
CN101238553A (zh) 2008-08-06
KR20080032163A (ko) 2008-04-14
KR101432832B1 (ko) 2014-08-26

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