US20110132874A1 - Small plasma chamber systems and methods - Google Patents
Small plasma chamber systems and methods Download PDFInfo
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- US20110132874A1 US20110132874A1 US12/957,923 US95792310A US2011132874A1 US 20110132874 A1 US20110132874 A1 US 20110132874A1 US 95792310 A US95792310 A US 95792310A US 2011132874 A1 US2011132874 A1 US 2011132874A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32376—Scanning across large workpieces
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Definitions
- the present invention relates generally to plasma processing of substrates, and more particularly, to methods and systems for plasma processing of a portion of a substrate surface using a small plasma processing chamber.
- FIG. 1 is a typical plasma processing chamber 100 .
- the typical plasma processing chamber 100 encloses the entire substrate 102 to be processed.
- the substrate 102 is loaded into the processing chamber 100 .
- the processing chamber 100 is then sealed and purged to evacuate undesired gases though the outlet 112 .
- a pump 114 may assist in drawing out the undesired gases.
- Purge gases or processing gases may be pumped into the processing chamber 100 from a processing and/or purging gas source 120 coupled to an input port 122 .
- the purge gases or processing gases may be pumped out the processing chamber 100 to dilute or otherwise remove the undesired gases.
- An electrical connection is made to the substrate 102 , typically through an electrostatic chuck 104 .
- a plasma signal source 108 B is coupled to the substrate 102 , typically through the electrostatic chuck 104 .
- a plasma signal source 108 A is coupled to an emitter 106 in the processing chamber.
- the desired gas(es) at the desired pressures and flowrates are then input to the processing chamber 100 .
- the plasma 110 is initiated by outputting a processing signal (e.g., RF) at the desired frequency and potential from the signal source 108 and imparting the emitted energy to the gases in the processing chamber 100 .
- Ions 110 A generated by the plasma directly impinge on the entire surface of the substrate 102 .
- the plasma 110 also generates heat which is absorbed at least in part by the substrate 102 .
- the electrostatic chuck 104 can also cool the substrate 102 .
- the typical plasma processing chamber 100 is larger than the substrate 100 to be processed so that the entire substrate can be processed within the processing chamber at one time. As the typical plasma processing chamber 100 is increased in size the amount of purging gas and the time required to purge the processing chamber 100 increases. As a result, a larger processing chamber 100 has an increased purging time before and after the substrate 102 is processed.
- the throughput of the typical processing chamber 100 is substantially determined by a sum of the substrate loading time, the preprocessing purging time, the substrate processing time, the post-processing purging time and the unloading time. Therefore, the increased purging time of the larger processing chamber 100 decreases the throughput as the size of the substrate 102 increases.
- the entire surface of the substrate 102 is processed (e.g., exposed to the plasma 110 ) at the same time in the typical processing chamber 100 .
- the plasma 110 must be sufficiently large enough to substantially evenly expose the entire surface of the substrate 102 at one time.
- the amount of energy required to generate the plasma 110 increases approximately with the square of the area of the surface of the substrate. As a result, the energy requirements for larger substrates 102 increases and the throughput decreases.
- the present invention fills these needs by providing improved plasma processing systems and methods that are scalable to ever larger substrates without sacrificing throughput. It should be appreciated that the present invention can be implemented in numerous ways, including as a process, an apparatus, a system, computer readable media, or a device. Other aspects and advantages of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
- One embodiment provides a plasma etch processing tool, including a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support.
- the power supply can have a setting that is proportional to a volume in the plasma microchamber.
- the power supply can include a first power supply coupled to the plasma microchamber and a second power supply coupled to the substrate support.
- the substrate support can be a chuck.
- the chuck can have a chucking area that is less than or equal an area of the substrate.
- the plasma microchamber is movable relative to the substrate. Only a portion of the substrate support may be biased and wherein the biased portion of the substrate support is substantially aligned with the plasma microchamber.
- the biased portion of the substrate support can be movable for maintaining substantial alignment with the movable plasma microchamber.
- the plasma microchamber can have a microchamber volume and wherein the microchamber volume contains a plasma.
- the plasma etch processing tool can also include a process material source coupled to the plasma microchamber and a vacuum source coupled to the plasma microchamber.
- the vacuum source can have an adjustable vacuum source.
- the plasma etch processing tool can also include a sealing structure.
- the sealing structure can include a sealing ring.
- the sealing structure can include an outer chamber around the microchamber.
- the plasma microchamber can be movable relative to the substrate and an actuator connected to the substrate support can also be included.
- the actuator can be configured to move the substrate support so as to expose a selected region of substrate surface, when placed over the substrate support.
- the actuator can be configured to move in one or more of a rotational direction, an angular direction, a linear direction, a non-linear direction, or a pivoting direction.
- the plasma microchamber can be movable relative to the substrate and an actuator can be connected to the plasma microchamber, the actuator can be configured to move the plasma microchamber so as to expose a selected region of substrate surface, when placed over the substrate support.
- the actuator can be configured to move in one or more of a rotational direction, an angular direction, a linear direction, a non-linear direction, or a pivoting direction.
- the substrate support can be configured to rotate the substrate.
- the substrate support can include an edge ring. At least a portion of the edge ring can be biased. At least a portion of the edge ring can be replaceable. At least a portion of the edge ring can be reactive with a plasma in the plasma microchamber.
- the edge ring can be adjacent to at least a portion of an edge of a substrate when present on the substrate support.
- the edge ring can be adjacent to a curved portion of an edge of a substrate when present on the substrate support.
- the microchamber can include multiple inlet ports and multiple outlet ports. At least one of the inlet ports is coupled to one of a multiple process material sources. At least one of the inlet ports can be coupled to a purge material source. At least one of the outlet ports can be coupled to a vacuum source.
- the plasma etch processing tool can also include at least one monitoring instrument.
- the monitoring instrument can monitor a byproduct output from the plasma microchamber.
- the monitoring instrument can monitor a spectrum of light emitted from the plasma microchamber.
- the monitoring instrument can be coupled to a controller.
- the monitoring instrument can monitor the surface of the substrate.
- An inner volume of the plasma microchamber can have a constant width along a length of the plasma microchamber.
- An inner volume of the plasma microchamber can have a width that varies along a length of the plasma microchamber.
- An inner volume of the plasma microchamber can have a constant depth that along a length of the plasma microchamber.
- An inner volume of the plasma microchamber can have a depth that varies along a length of the plasma microchamber.
- An inner volume of the plasma microchamber can have a depth that is adjustable along a length of the plasma microchamber.
- the plasma etch processing tool can include multiple plasma microchambers.
- the multiple plasma microchambers can have a linear arrangement.
- the multiple plasma microchambers can have a rotary arrangement.
- Another embodiment provides a method of performing a plasma etch including forming a plasma in a plasma microchamber.
- the microchamber including a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support.
- the plasma microchamber is moved relative to a surface of the substrate, when present in the substrate support, until a selected one of multiple surfaces of the substrate is exposed to the plasma.
- the method can also include drawing multiple plasma byproducts out of the plasma microchamber.
- the plasma byproducts are drawn out of the plasma microchamber near a top portion of the plasma microchamber.
- FIG. 1 is a typical plasma processing chamber.
- FIGS. 2A-2C show embodiments of a plasma processing system that process selected portions of a full surface of the surface being processed in accordance with embodiments of the present invention.
- FIG. 2D is a flowchart diagram that illustrates the method operations performed in forming a plasma in the microchamber, in accordance with embodiments of the present invention.
- FIGS. 3A-3F show detailed cross-sectional views of microchambers, in accordance with embodiments of the present invention.
- FIG. 3G is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3H is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3I is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3J is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3K is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3L is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIG. 3M is a top view of a microchamber, in accordance with embodiments of the present invention.
- FIGS. 3N-3P are lengthwise cross-sectional views of microchambers, respectively, in accordance with embodiments of the present invention.
- FIGS. 4A-4C show a single processing head with multiple microchambers, in accordance with embodiments of the present invention.
- FIG. 4D shows a single processing head with multiple microchambers, in accordance with embodiments of the present invention.
- FIG. 5 is a flowchart diagram that illustrates the method operations performed in processing a surface of the substrate with a processing head having multiple processing chambers, in accordance with embodiments of the present invention.
- FIGS. 6A-6B show a simplified schematic of multiple station process tools, in accordance with embodiments of the present invention.
- FIG. 7 shows a simplified schematic of a process tool, in accordance with embodiments of the present invention.
- FIG. 8 is a flowchart diagram that illustrates the method operations performed in processing substrates with a multiple processing head process tool, in accordance with embodiments of the present invention.
- FIG. 9A shows multiple processing head process tools in a manufacturing system, in accordance with embodiments of the present invention.
- FIG. 9B shows multiple processing head process tools in a manufacturing facility, in accordance with embodiments of the present invention.
- FIG. 10 is a block diagram of an exemplary computer system for carrying out the processing, in accordance with embodiments of the present invention.
- FIG. 11A shows a schematic diagram of a processing head, in accordance with embodiments of the present invention.
- FIG. 11B shows a schematic diagram of a processing head, in accordance with embodiments of the present invention.
- FIG. 11C is a flowchart diagram that illustrates the method operations performed in forming a plasma in the microchamber 202 A and moving the microchamber and biasing corresponding portions of the dynamic chuck, in accordance with one embodiment of the present invention.
- FIG. 11D shows a schematic diagram of a processing head, in accordance with embodiments of the present invention.
- FIGS. 12A-12C are plasma microchambers, in accordance with embodiments of the present invention.
- FIG. 12D is a top view of a linear multiple microchamber system, in accordance with embodiments of the present invention.
- FIG. 12E is a side view of a linear multiple microchamber system, in accordance with embodiments of the present invention.
- FIG. 12F is a top view of a system including two, linear multiple microchamber systems feeding substrates to a cleaning line, in accordance with embodiments of the present invention.
- FIG. 12G is a top view of a system with two multiple fan-like shape microchambers, in accordance with embodiments of the present invention.
- FIG. 12H is a graph of various plasma sources, in accordance with embodiments of the present invention.
- FIG. 12I is a graph of plasma densities of various types of plasma, in accordance with embodiments of the present invention.
- Present semiconductor processing is mostly focused on 200 mm and 300 mm semiconductor wafers and flat panel substrates of different shapes and sizes. As the need for throughput grows, future semiconductor wafers and substrates will be larger, such as the next generation of semiconductor wafers that are 450 mm and larger.
- the plasma chamber volume grows much faster than the diameter of the wafer intended to be process within the plasma chamber. As the volume of the plasma chamber increases the material costs of building the plasma chamber also increase. Also as the volume of the plasma chamber increases, the plasma becomes more difficult to control and maintain consistency throughout the chamber. Further, as the volume increases the energy requirements to generate the plasma also increases thus driving the energy costs higher yet yielding less consistent results.
- a small plasma chamber e.g., a microchamber
- the semiconductor substrate to be processed or exposed to the plasma can be any surface such as a semiconductor substrate, a flat panel substrate of any shape or size.
- FIGS. 2A-2C show embodiments of a plasma processing system that process selected portions of a full surface of the surface being processed in accordance with embodiments of the present invention.
- FIG. 2A which shows a side view of one portion of the system 204 A includes a microchamber 202 A formed by a housing 230 having an internal volume 231 .
- the internal volume 231 is bounded on three sides by chamber insert 230 .
- the fourth side of the internal volume 231 is formed by a portion of the surface being processed in this instance, a portion 102 A′ of the surface of the semiconductor substrate 102 A.
- the substrate 102 A is supported on a chuck 201 A.
- the chuck 201 A can have a width equal to or slightly smaller than or slightly larger than the width of the substrate 102 A.
- the chuck 201 A can be heated or cooled as may be desired for the processing of the surface of the substrate 102 A.
- temperature control system 234 for heating or cooling is coupled to the chuck 210 .
- the chuck 201 A can also be coupled to a biasing source 232 B.
- the chuck 201 A can also be movable so as to move the substrate 102 A in various directions.
- the chuck 201 A can rotate the substrate 102 A.
- the chuck 201 A can move the substrate 102 A laterally relative to the microchamber 202 A and the chuck can move the substrate closer or further away from the microchamber.
- the microchamber 202 A has multiple inlet and outlet ports 216 A- 216 D that are coupled to process material sources or purge and vacuum sources 220 A- 220 D.
- the process materials or purge are delivered to the microchamber 202 A via at least one of the inlet and outlet ports 216 A- 216 D, 216 A′.
- the plasma byproducts are drawn away from the microchamber through at least one of the inlet and outlet ports 216 A- 216 D, 216 A′.
- the plasma is contained within the microchamber 202 A by the physical constraints of the inner chamber surfaces and the flow of the gases within the microchamber.
- the microchamber 202 A is sealed around the perimeter of the surface being processed by seal 212 .
- the microchamber 202 A is movable relative to the surface of the substrate 102 A being processed.
- the microchamber 202 A can be movable or stationary and the surface of the substrate 102 A being processed can be movable or stationary.
- the substrate 102 A has a width L 1 and a cover 210 has a width L 2 that is sufficiently wide or long enough that the substrate and/or the microchamber 202 A can move relative to one another so that the microchamber can pass over the entire surface of the substrate and remain between the seals 212 .
- the environment in the space 214 is controlled by the process materials and/or vacuum or gas flows provided via ports 216 A- 216 D and 216 A′.
- the outlet ports 216 A and 216 B are located near an upper portion of the microchamber 202 A so as to draw out the plasma byproducts and minimize interference with the ions flowing from the plasma to the portion 102 A′ of the surface of the semiconductor substrate 102 A.
- the precise width of the minimal space 208 A can be selected according to the plasma processing being applied to the surface of the substrate.
- One or more ports 208 B may be coupled to the minimal space 208 A.
- a process material or purge source and/or vacuum source 220 E can be coupled to the port 208 B. In this manner processing material can be delivered through the minimal space 208 A and/or a vacuum can be applied to the port 208 B so as to aid in controlling the environment within the space 214 .
- FIG. 2B which shows a top view of the microchamber 202 A.
- a portion of the cover 210 is shown cut away so as to show the edge ring 208 and the seal 212 around to the perimeter of the edge ring and the substrate 102 A to be processed by the microchamber.
- the microchamber 202 A is shown having a width W 1 less than the width W 2 of the substrate 102 A be processed by the plasma, however this is merely an exemplary embodiment as will be shown in further detail in other figures that the microchamber can have several different shapes, depths, widths, lengths and configurations.
- the substrate 102 A is shown in a substantially round shape it should be understood that this is merely an exemplary shape and that the substrate can be in any suitable or desirable shape and size.
- the substrate 102 A can be an irregular shape or a square shape or an elliptical shape or any other shape that can be placed within a fixture so that the microchamber can be moved over the surface of the substrate 102 A.
- an actuator 240 is coupled to the microchamber 202 A by a coupling arm 241 .
- the actuator 240 is capable of moving the microchamber 202 A relative to the surface of the substrate 102 A.
- the cover 210 can move with the microchamber 202 A so as to maintain contact with and a seal to the seal 212 .
- the microchamber 202 A can move relative to the surface of the substrate 102 A and at the same time maintain a controlled environment over the surface of the substrate.
- the microchamber 202 A can also include one or more insitu monitoring instruments 211 A-D.
- the insitu monitoring instruments 211 A-D can be optical surface scanning instruments, optical spectrum or brightness analysis instruments, or magnetic instruments or chemical analysis instruments as are well known in the art.
- the insitu monitoring instruments 211 A-D are coupled to a system controller.
- One or more of the insitu monitoring instruments 211 A-D can analyze the surface of the substrate before, during and/or after processing by the microchamber 202 A.
- instrument 211 A can measure the surface of the substrate 102 A and a controller can use the measurement from instrument 211 A to determine the operational parameters of a plasma process to apply to the surface of the substrate 102 A.
- instrument 211 C can measure the results of the plasma processing of the surface.
- the measured results from instrument 211 C can be used by the controller to determine operational parameters and/or additional processing that may be subsequently needed for the surface of the substrate 102 A.
- instrument 211 B can measure the results of the plasma processing of the surface as the plasma is applied to the surface of the substrate. The measured results from instrument 211 B can be used by the controller to determine operational parameters and/or additional processing that can be applied to the surface of the substrate 102 A as the plasma is being applied to the surface of the substrate 102 A.
- One or more of the insitu monitoring instruments 211 A-D can analyze the plasma byproducts.
- instrument 211 D can measure the results of the plasma processing of the surface as the plasma is applied to the surface of the substrate by analyzing the plasma byproducts being output from the microchamber 202 A.
- the measured results from instrument 211 D can be used by the controller to determine operational parameters and/or additional processing that can be applied to the surface of the substrate 102 A as the plasma is being applied to the surface of the substrate 102 A of the substrate before, during and/or after processing by the microchamber 202 A.
- the insitu monitoring instruments 211 A-D can be used by the controller to measure results of the plasma processing and adjust plasma operational parameters accordingly to gain the desired result.
- the measured results from one or more of the instruments 211 A-D may indicate a longer or shorter plasma processing time is needed or a greater or lesser flowrate and/or pressure of one or more plasma source materials or a change in biasing or frequency is needed or a change in temperature is needed to achieve the desired result.
- the insitu monitoring instruments 211 A-D can be used by the controller to detect and map local and global non-uniformities on the surface of the substrate 102 A. The controller can then direct the appropriate follow-up processing to correct the detected non-uniformities. The controller can also use the detected non-uniformities to adjust the plasma operational parameters for plasma processing subsequent substrates.
- the microchamber 202 A may include an optical view port for one or more instruments 211 A-D to perform a spectrum analysis or brightness analysis of the plasma 244 inside the microchamber 202 A.
- One or more of the instruments 211 A-D can be used to detect and endpoint of the plasma processing.
- the controller can also adjust plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of the microchamber 202 A.
- one or more of the instruments 211 A-D can be used to monitor the plasma and the resulting plasma byproduct build-up on the inner surfaces of the microchamber 202 A.
- the controller can adjust the plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of the microchamber 202 A according to an operational sequence or a timer or a recipe in the controller or in response to a controller input (e.g., received from an operator).
- Adjusting the plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of the microchamber 202 A can also include adjusting the plasma operational parameters to remove the all or a portion of the build-up of plasma by-products on the inner surfaces of the microchamber.
- the controller can also adjust plasma operational parameters as the distance D 1 between the microchamber 202 A and the surface of the substrate 102 A varies.
- the D 1 can be adjusted for various operational reasons or physical reasons and the plasma operational parameters can be adjusted to compensate for the different distance so as to achieve the desire result.
- FIG. 2C is a more detailed side view of the microchamber 202 A, in accordance with embodiments of the present invention.
- FIG. 2D is a flowchart diagram that illustrates the method operations 250 performed in forming a plasma in the microchamber 202 A, in accordance with embodiments of the present invention.
- the operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations.
- the method and operations 250 will now be described.
- the cover 210 is sealed over the substrate 102 A by compressing the seal 212 between the support 206 and the cover 210 .
- the seal 212 is compressed by moving the cover 210 in direction 227 or moving the support 206 in direction 225 so that the cover 210 in direction 227 are moved toward each other so as to compress the seal 212 between the cover 210 and the support 206 .
- the microchamber 202 A and space 214 are purged and or brought to vacuum.
- a purge material e.g., an inert purge gas or liquid or vapor or other fluid or combinations thereof
- a purge material is delivered from one or more of the process material or purge sources 220 A-D and/or 220 A′ to at least one of the ports 216 A-D and/or 216 B′.
- a process material 242 is provided by one or more of the process material sources 220 A-D and injected into the plasma chamber 202 A through at least one of the ports 216 A-D and/or 216 B′.
- the process material 242 can be provided by one or more of the process material sources 220 A-D and injected into the microchamber 202 A through port 216 B′.
- Providing the process material can also include mixing two or more process materials insitu and on demand. The mixing can occur in a manifold or mixing point (not shown) outside the microchamber 202 A. The mixing of the two or more plasma source materials 220 A′, 220 A′′ can also occur inside the microchamber 202 A.
- a plasma signal (typically RF or microwave) is generated by a signal source 232 A and applied to the antenna/coil 233 and the chuck 201 A at the desired frequency, voltage, waveform, duty cycle and current.
- a plasma 244 generates ions 246 and heat. The ions 246 and heat that interact with the first portion 102 A′ of the surface of the semiconductor substrate 102 A and produce plasma byproducts 248 .
- the plasma byproducts 248 are drawn out of the microchamber 202 A.
- the plasma byproducts 248 can be drawn out of the microchamber 202 A by applying a vacuum to at least one of the ports 216 A-D and/or 216 B′.
- a vacuum can be applied to ports 216 A-D and draw plasma byproducts 248 A-C out of the microchamber 202 A.
- Drawing the plasma byproducts 248 A-C out of the microchamber 202 A through ports 216 A-D also draws the plasma byproducts 248 A-C away from the ions 246 and the portion of the surface 102 A′ being processed or exposed to plasma 244 .
- Removing the plasma byproducts 248 from the microchamber 202 A reduces the possibility of the plasma byproducts interfering with the ions 246 contacting the selected portion 102 A′ of the surface of the substrate 102 A. Removing the plasma byproducts 248 from the microchamber 202 A reduces the possibility of the plasma byproducts attaching to the inner surfaces 203 A-C of the microchamber 202 A. If the plasma byproducts 248 attach to and build up on the inner surfaces 203 A-C of the microchamber 202 A. Such buildup can change the architecture and overall shape of the microchamber which can cause changes in plasma 244 density and distribution within the microchamber and more specifically change the plasma density applied to the surface of the substrate 102 A.
- the microchamber 202 A can be moved in at least one of directions 224 , 224 A, 226 and/or 226 A relative to the substrate 102 A until a subsequent portion 102 A′′ of the surface of the substrate is aligned with the microchamber.
- the microchamber 202 A is then formed by the inner surfaces 203 A-E and the second portion 102 A′′ of the surface of the substrate 102 A and the plasma is applied to the subsequent portion 102 A′′ of the surface of the substrate 102 A in an operation 266 .
- an operation 268 if there are additional portions of the surface of the substrate to be processed, the method operations continue in operations 264 - 266 as described above. If there are no additional portions of the surface of the substrate to be processed, the method operations end.
- An edge platform or edge ring 208 can also be included as shown in FIGS. 2A-2C .
- the edge ring or platform 208 provides additional processing surface where the microchamber 202 A can be located during an initial plasma phase and a shut down of the plasma or any other time when the plasma can be operated but it is not desired to have the plasma in contact with the surface of the substrate 102 A.
- the edge ring or platform 208 is separated from the surface of the substrate 102 A by a minimal space 208 A.
- the edge ring or platform 208 can be adjacent to the entire perimeter of the substrate 102 A, as shown. Alternatively, the edge ring or platform 208 can be adjacent to only one or more portions of the perimeter of the substrate.
- the edge ring or platform 208 can be used with any shape substrate whether the substrate is round, rectangular or some other shape (irregular, any polygon, etc.).
- a partial edge ring or platform 208 is described in more detail in commonly owned U.S. Pat. No. 7,513,262, entitled “Substrate Meniscus Interface and Methods for Operation” by Woods, which is incorporated by reference herein, in its entirety and for all purposes.
- the edge ring or platform 208 can perform several functions.
- One function is a microchamber starting, stopping and “parking” location for the microchamber or other processing chamber as described in U.S. Pat. No. 7,513,262.
- Another function is to reduce the concentration of the plasma 244 on the edge of the substrate 102 A. Without the edge ring 208 , as a microchamber passes onto the edge of the substrate 102 A, the volume of the microchamber would change considerably because the distance to that side of the microchamber formed by the substrate would change by the thickness of the substrate 102 A. This change in microchamber volume will change the plasma concentration of ions and even the plasma shape.
- the ions 246 emitted from the plasma 244 and be focused on the relatively small area of the edge of the substrate 102 A.
- the reactivity of the ions 244 will also be focused on the relatively small area of the edge of the substrate 102 A and the relative processing activity would be greatly increased on the edge of the substrate 102 A as compared to other portions of the surface of the substrate.
- the edge ring or platform 208 With the edge ring or platform 208 maintained at substantially the same potential as the substrate, the edge ring or platform 208 also maintains a substantially constant microchamber plasma volume and a substantially constant ion concentration as the plasma transitions from the edge ring or platform across the edge of the substrate 102 A and fully onto the surface of the substrate 102 A.
- the controller can also adjust the plasma parameters as the microchamber 202 A passes over and processes the edge of the substrate.
- the edge of the substrate includes a bevel edge portion that is not typically used as part of the active device structures as it is used for handling the substrate.
- the bevel edge is typically rounded or beveled and as such can change the volume of the microchamber as the bevel edge passes through the microchamber.
- the controller can also adjust the plasma parameters as the microchamber to process the bevel edge to achieve the desired result.
- the edge ring 208 can be a sacrificial material that is processed by the microchamber similar to the processing of the substrate 102 A.
- the edge ring can include multiple layers or portions.
- the edge ring 208 can include a layer 208 A.
- the layer 208 A may be sacrificial and the remaining portion of the edge ring substantially resistant to the plasma processing of the microchamber.
- the layer 208 A may be substantially impervious or resistant to the plasma processing of the microchamber.
- the microchamber 202 A can also include an insitu mixing point or manifold 221 where two or more plasma source materials 220 A′, 220 A′′ can be mixed as needed for use in the microchamber 202 A.
- the insitu mixing point or manifold 221 can also include flow metering systems 221 A for controlling the quantity, flowrate and pressures of the plasma source materials 220 A′, 220 A′′ so that the desired mixture can be created immediately before the mixture is input to the microchamber 202 A.
- the microchamber 202 A can also include a temperature control system 223 A.
- the temperature control system 223 A can heat or cool the microchamber 202 A and/or the plasma source materials 220 A′ in the microchamber. In this way the temperature of the microchamber 202 A and/or the plasma source materials 220 A′ can be controlled.
- microchamber 202 A While the described and illustrated embodiments are shown in a horizontal orientation, it should be understood that the microchamber 202 A and be operated in any orientation. By way of example, the microchamber 202 A and be operated in an inverted orientation. The microchamber 202 A and be operated in a vertical orientation or in any angle between horizontal and vertical.
- the substrate 102 A can be rotated by the chuck 210 so that the microchamber 202 A can be passed over a first portion of the surface of the substrate (e.g., a first half or a first quadrant or other portion). Then the substrate 202 A can be rotated so that the microchamber 202 A can be passed over a subsequent portion of the surface.
- the microchamber 202 A may be moved less in this manner as the rotated substrate may allow the microchamber to move in an opposite direction for processing the second portion from the direction it moved while processing the first portion of the surface of the substrate. This can reduce the overall size of the cover 210 as the cover will not need to be larger than twice the width of the substrate and can be possibly only slightly larger than about the width of the substrate 102 A.
- FIGS. 3A-3F show detailed cross-sectional views of microchambers 202 A. 1 - 202 A. 6 , in accordance with embodiments of the present invention.
- the microchambers 202 A. 1 - 202 A. 6 have various locations, numbers and arrangements of inlet and outlet ports 216 A, 216 B, 216 A′, 216 B′, 216 A′′, 216 B′′.
- the microchambers 202 A. 1 - 202 A. 6 also have various cross-sectional shapes. It should be understood these are merely exemplary shapes and port arrangements and combinations and fewer or greater numbers of ports can also be included.
- inlet and outlet ports 216 A, 216 B, 216 A′, 216 B′, 216 A′′, 216 B′′ relative to a centerline 305 are merely exemplary and the inlet and outlet ports may be angled differently than shown and in any suitable angle.
- microchamber 202 A. 1 includes two outlet ports 216 A, 216 B and one inlet port 216 B′.
- One outlet port 216 A in a first side 203 A is near a top portion 203 C of the microchamber 202 A. 1 .
- Inlet port 216 B′ is located in the top portion 203 C of the microchamber.
- a second outlet port 216 B is located further away from the top portion 203 C in a side 203 B substantially opposite from the first side 203 A.
- microchamber 202 A. 1 has a substantially trapezoidal cross-sectional shape
- microchamber 202 A. 2 has a substantially triangular cross-sectional shape
- microchamber 202 A. 3 has a rounded substantially triangular cross-sectional shape
- microchamber 202 A. 4 has a substantially rectangular cross-sectional shape
- microchamber 202 A. 5 has a substantially U-cross-sectional shape
- microchamber 202 A. 6 has a substantially rectangular cross-sectional shape with rounded corners.
- the illustrated combination and shapes of the microchambers 202 A. 1 - 6 and the corresponding arrangement of the inlet and outlet ports 216 A, 216 B, 216 A′, 216 B′, 216 A′′, 216 B′′ are merely exemplary combinations.
- the microchamber 202 A. 5 shown in FIG. 3E can include the port arrangement as shown in FIG. 3F or any combination of port arrangements.
- the size can also be varied, to provide for more or less volume in the microchambers.
- FIG. 3G is a top view of a microchamber 202 A, in accordance with embodiments of the present invention.
- the microchamber 202 A is similar to the microchambers described above and having a width W 3 equal to or greater than width W 2 of the substrate 102 A.
- FIG. 3H is a top view of a microchamber 321 A, in accordance with embodiments of the present invention.
- Microchamber 321 A is similar to the microchamber 202 A shown in FIG. 2B except the microchamber 321 A is substantially round.
- Microchamber 321 A can also include an instrument 324 to monitor the operation of the microchamber.
- FIG. 3I is a top view of a microchamber 321 B, in accordance with embodiments of the present invention.
- Microchamber 321 B is similar to the microchamber 321 A shown in FIG. 3H except the microchamber 321 B is an annular microchamber forming a plasma in a substantially annular region 322 B. Only the corresponding annular portion 302 A of the surface of the substrate 102 A is exposed to the plasma in the annular microchamber 321 B.
- the microchamber 321 B can also include an instrument 324 to monitor the operation of the microchamber.
- FIG. 3J is a top view of a microchamber 321 C, in accordance with embodiments of the present invention.
- Microchamber 321 C has an arced shape similar to but not necessarily the same curve as a portion of a curved edge of the substrate 102 A. This allows for etch preparation of the wafer edge, such as to remove byproducts or buildups. This edge processing can also be done after full wafer processing is completed and in conjunction with other wafer clean operations.
- FIG. 3K is a top view of a microchamber 321 D, in accordance with embodiments of the present invention.
- Microchamber 321 D is substantially similar to microchamber 202 A as shown in FIG. 2B above, however the microchamber 321 D also includes a partial masking plate 331 .
- the partial masking plate 331 can selectively mask a portion of the surface of the substrate 102 A from the plasma in the microchamber 321 D.
- the partial masking plate 331 can be fixed or movable relative to the microchamber 321 D.
- the actuator 240 can be coupled to the partial masking plate 331 by a coupling arm 331 A.
- FIG. 3L is a top view of a microchamber 321 E, in accordance with embodiments of the present invention.
- Microchamber 321 E is substantially similar to microchamber 321 D as shown in FIG. 3K above, however the microchamber 321 E also includes a full masking plate 333 .
- the full masking plate 333 includes an opening 335 that can selectively expose a portion of the surface of the substrate 102 A to the plasma in the microchamber 321 E.
- the full masking plate 333 can be fixed or movable relative to the microchamber 321 E.
- the actuator 240 can be coupled to the full masking plate 333 by a coupling arm 333 A.
- FIG. 3M is a top view of a microchamber 321 F, in accordance with embodiments of the present invention.
- Microchamber 321 F is substantially similar to microchamber 202 A as shown in FIG. 3G above, however the microchamber 321 F has a fan-like shape having a narrow first end 323 A having a width W 4 and an opposite second end 323 B, having a width W 5 , where W 5 is wider than W 4 .
- the ratio of W 4 and W 5 can be a function of a rotation of the substrate around a rotary table as will be described in more detail below so that the residence time of the substrate 102 A at the first end 323 A is substantially the same as the residence time at the second end 323 B.
- Microchamber 321 F is coupled to an actuator 240 by coupling arm 241 .
- Actuator 240 can pivot microchamber 321 F in directions 350 A, 350 B to move the microchamber into positions 312 F′ to 312 F′′ and even further so that the microchamber can be pivoted completely off of the substrate 102 A. In this manner the microchamber can be pivoted over the entire surface of the substrate 102 A.
- FIGS. 3N-3P are lengthwise cross-sectional views of microchambers 321 G, 321 H and 335 , respectively, in accordance with embodiments of the present invention.
- Microchamber 321 F has a constant depth D 1 throughout the length of the microchamber.
- the depth of microchamber 321 G varies along the length from a depth D 1 at a first end 313 A to a depth D 2 at a second end 313 B.
- the depth of microchamber 321 G can be constant throughout a first portion 313 C of the microchamber and then vary along a second portion 313 D.
- microchamber 335 has a variable depth and shape along the length of the microchamber.
- the microchamber 335 includes multiple depth and shape adjusters 331 A- 331 L.
- the depth and shape adjusters 331 A- 331 L are coupled to an actuator 330 by links 332 .
- the depth and shape adjusters 331 A- 331 L can be moved in direction 334 A or 334 B by actuator 330 to adjust a depth and shape of a corresponding portion 333 A- 333 E of the microchamber.
- the depth and shape adjusters 331 A- 331 L can be moved laterally (e.g., into and out of the plane of the view shown in FIG. 3P ) to vary the depth and shape of the microchamber 335 .
- the depth and shape adjusters 331 A- 331 L can be biased at a desired potential or electrically isolated from the various potentials within the microchamber 335 .
- the depth and shape adjusters 331 A- 331 L can be any suitable material or shape.
- the depth and shape of the microchamber 335 can be adjusted to as desired to provide the desired plasma exposure to the surface of the substrate 102 A.
- FIGS. 4A-4C show a single processing head 402 with multiple microchambers 404 A-C, in accordance with embodiments of the present invention.
- FIG. 4A is a top view of the processing head 402 .
- FIG. 4B is a side sectional view of the processing head 402 .
- FIG. 4C is a bottom view of the processing head 402 .
- the processing head 402 includes three processing chambers 404 A-C.
- the processing head 402 can move in directions 406 A and 406 B relative to the substrate 102 A such that each of the processing chambers 404 A-C can be passed fully across the top surface of the substrate 102 A.
- the processing head 402 and the substrate 102 A can move in the same direction at different speeds.
- the processing head 402 and the substrate 102 A can move in different directions the same or different speeds.
- Each of the each of the processing chambers 404 A-C can apply a corresponding process to the surface of the substrate 102 A.
- the processing chambers 404 A-C are shown as being substantially similar in size, shape, distribution and function, however it should be understood that each one of the processing chambers may have a different size, shape and function. It should also be understood that each processing head 404 can include any number from one or more processing chambers.
- Processing chamber 404 A may have a different length, width and/or depth as compared to the other processing chambers 404 B, 404 C.
- processing chamber 404 A may have a width less than the width of the substrate and processing chambers 404 B and 404 C have a width equal to or greater than the width of the substrate.
- Processing chamber 404 A may have a different shape, e.g., rectangular, rounded, annular, etc. as compared to the other processing chambers 404 B, 404 C.
- processing chamber 404 A may have a rectangular shape and processing chambers 404 B and 404 C have an oval or a rounded shape.
- Processing chambers 404 A- 404 C can be distributed differently around the processing head 402 .
- processing chamber 404 A may be located near an edge of the processing head 402 and processing chambers 404 B and 404 C are distributed in uneven spacing about the processing head.
- Processing chamber 404 A may have a different function, e.g., plasma etch, plasma cleaning, passivation, non-plasma cleaning and or rinsing, etc. as compared to the other processing chambers 404 B, 404 C.
- processing chamber 404 A may have a passivation function and processing chambers 404 B and 404 C have different plasma etching functions.
- one or more of the processing chambers 404 A- 404 C can be a proximity head cleaning station as described in more detail in commonly owned U.S. Pat. No. 7,198,055, entitled “Meniscus, Vacuum, IPA Vapor, Drying Manifold” by Woods, and U.S. Pat. No.
- the processing head 402 includes three processing chambers 404 A-C.
- the processing chambers 404 A-C appear as openings in the corresponding regions 408 A- 408 C of the substantially flat bottom surface 402 A of the processing head 402 .
- the processing head 402 can also include a barrier system 410 separating each processing chamber from the adjacent processing chamber.
- the barrier system 410 can be physical barrier such as a seal or an electrical or magnetic field or a gas curtain and/or vacuum curtain or other fluid barrier.
- Multiple processing chambers 404 A- 404 C in the single processing head 402 allows different processes to be conducted in each processing chamber. Further, one processing chamber may be used while a second processing chamber is cleaned without interrupting throughput.
- FIG. 4D shows a single processing head 422 with multiple microchambers 424 A-D, in accordance with embodiments of the present invention.
- the processing head 422 can rotate relative to the substrate 102 A and thus pass the surface of the substrate 102 A under at least one of the processing chamber in as little as a quarter turn (90 degree rotation).
- the processing head 422 and/or the substrate 102 A can rotate in directions 426 A and/or 426 B.
- the processing head 422 and the substrate 102 A can rotate in the same direction at different speeds.
- the processing head 422 and the substrate 102 A can rotate in opposing directions 426 A and/or 426 B at the same or different speeds.
- FIG. 5 is a flowchart diagram that illustrates the method operations 500 performed in processing a surface of the substrate 102 A with a processing head having multiple processing chambers, in accordance with embodiments of the present invention.
- the operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method and operations 500 will now be described.
- a first processing chamber is placed over a first portion of the substrate 102 A.
- a second processing chamber is placed over a second portion of substrate 102 A. Additional processing chambers can be placed over corresponding additional portions of the substrate 102 A.
- a first portion of substrate 102 A is processed with the first microchamber.
- a second portion of substrate 102 A is processed with the second microchamber. Additional processing chambers can process corresponding additional portions of the substrate 102 A. It should be understood that the first and second portions of the substrate 102 A can be processed simultaneously or at different times or for different lengths of time. Further, as described above, the process applied to each of the first and second portions of the substrate 102 A can be the same or different.
- the first and second microchambers are moved over subsequent portions of substrate 102 A.
- the first and second microchambers can be moved over subsequent portions of substrate 102 A simultaneously or at different times and rates of movement.
- the first and second microchambers can be moved in the same or different directions.
- the subsequent portions of substrate 102 A are processed with first and second microchambers.
- an operation 518 if additional portions of the substrate 102 A need to be processed then the method operations continue in operation 510 as described above. If no additional portions of the substrate 102 A need to be processed then the method operations can end.
- FIGS. 6A-6B show a simplified schematic of multiple station process tools 600 , 640 , in accordance with embodiments of the present invention.
- the redundancy of having multiple process heads 204 A- 204 F, 244 A- 244 F in the process tools 600 , 540 increases throughput and reliability as the process heads can be processing the substrates 102 A- 102 H in parallel.
- the multiple process heads 204 A- 204 F, 244 A- 244 F can be any type of processing heads or combinations thereof as described herein.
- process tool 600 includes a rotary arrangement of process heads 204 A- 204 F.
- Each of the process heads 204 A- 204 F includes one or more microchambers 202 A- 202 F.
- Multiple substrates 102 A- 102 F can be supported and processed by corresponding ones of the process heads 204 A- 204 F.
- the process heads 204 A- 204 F and/or the substrates 102 A- 102 F can move so that the substrates can be processed by one or more of the process heads.
- the rotary process tool 600 rotates in directions 622 A and 622 B.
- the rotary process tool 600 also includes a controller 612 having a recipe for controlling the operation of the rotary process tool.
- process tool 640 includes a linear arrangement of process heads 244 A- 244 F.
- Each of the process heads 244 A- 244 F includes one or more microchambers 202 A- 202 F.
- Multiple substrates 102 A- 102 F can be supported and processed by corresponding ones of the process heads 204 A- 204 F.
- the process heads 244 A- 244 F and/or the substrates 102 A- 102 F can move so that the substrates can be processed by one or more of the process heads.
- the linear process tool 600 can move the substrates and/or the process heads 244 A- 244 F in directions 622 C and 622 D.
- the linear process tool 600 also includes a controller 612 having a recipe for controlling the operation of the linear process tool.
- the substrates 102 A- 102 F can also rotate about their axis at each one of the process heads 204 A- 204 F, 244 A- 244 F.
- Actuator 240 can be a stepper motor, a pneumatic actuator, a hydraulic actuator, an electromechanical actuator, a piezoelectric actuator for fine movement and or vibrating or any other suitable types of actuators.
- Each of the processing heads 204 A- 204 F, 244 A- 244 F can be applying the same or different process to the substrates 102 A- 102 H. Similar to as was described above with regard to multiple processing chambers in a single processing head, each processing head 204 A- 204 F, 244 A- 244 F can apply a respective process.
- a first processing head 204 A, 244 A can apply a plasma etch process to the substrate 102 A. Then the substrate 102 A is moved to process head 204 B, 244 B where a finish plasma etch process is applied. Then the substrate 102 A is moved to process head 204 C, 244 C where a proximity head cleaning is performed.
- One or more of the processing heads 204 A- 204 F, 244 A- 244 F can apply a pre-cleaning process such as cleaning the backside of substrate 102 A- 102 H to make sure the chuck properly contacts the substrate.
- processing heads 204 A- 204 F, 244 A- 244 F and substrates 102 A- 102 H can both be movable, then residence time for each substrate at each processing head can vary.
- processing head 204 A moves 12′′ per minute and the substrate is stationary.
- the relative speed is 12′′/min.
- Processing head 204 B also moves 12′′ per minute in a first direction and the substrate 102 B moves 12′′ per minute in a second, opposite direction, resulting in a relative speed of 24′′ per minute.
- processing head 204 C moves in the first direction at 11′′/min and the substrate 102 B moves in the same first direction at 12′′/min, yielding a relative speed of 1′′/min.
- This type of different speed could be usable because in Processing head 204 A and processing head 204 B the user desires a multiple rapid passes so that the substrate 102 A is etched in many thin layers so that the relative processing time at station 1 , 2 and 3 is approximately equal.
- FIG. 7 shows a simplified schematic of a process tool 700 , in accordance with embodiments of the present invention.
- the process tool 700 includes the rotary process tool 600 , as shown, or a linear process tool 640 , not shown.
- the process tool 700 also includes loading/unloading ports 702 , 704 .
- the loading/unloading ports 702 , 704 include load locks 712 A- 712 D.
- FIG. 8 is a flowchart diagram that illustrates the method operations 800 performed in processing substrates 102 A- 102 F with a multiple processing head process tool 700 , in accordance with embodiments of the present invention.
- the operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method and operations 800 will now be described.
- substrates 102 A- 102 F are loaded into the multiple processing head process tool 700 through the loading/unloading ports 702 , 704 . All of the substrates 102 A- 102 F can be loaded before processing begins.
- the substrates 102 A- 102 F can be loaded sequentially as the substrates are processed through the process heads 204 A- 204 F, 244 A- 244 F.
- the substrates 102 A- 102 F can be loaded sequentially or in batches.
- one or more substrates 102 A- 102 F can be loaded through each of the loading/unloading ports 702 , 704 .
- the processing heads 204 A- 204 F and 244 A- 244 F are sealed over the substrates 102 A- 102 F and purged for preparation for processing.
- the substrates 102 A- 102 F are processed by the respective processing heads 204 A- 204 F. It should be understood that the processing heads 204 A- 204 F and 244 A- 244 F can process the respective substrates 102 A- 102 F for the same or different time intervals as described elsewhere herein.
- the respective substrates 102 A- 102 F can be process in parallel to provide improved throughput.
- the substrates 102 A- 102 F are sequentially moved through the respective, subsequent processing heads 204 A- 204 F and 244 A- 244 F or the unload port 702 , 704 .
- substrate 102 A is progressed to processing head 204 B and substrate 102 B is progressed to processing head 204 C and substrate 102 C is progressed to processing head 204 D and substrate 102 D is progressed to processing head 204 E and substrate 102 E is progressed to processing head 204 F.
- substrate 102 F has progressed through all of the processing heads 204 A- 204 F then processing of substrate 102 F complete and substrate 102 F is therefore progressed to the load/unload port 702 , 704 .
- processing head 204 A is left without a substrate.
- an inquiry is made to determine if there are additional substrates (e.g., substrate 102 L′) is available to be loaded. If substrate 102 L′ is available to be loaded, then in operation 812 , substrate 102 L is loaded in head 204 A and the method operations continue in operation 804 as described above.
- additional substrates e.g., substrate 102 L′
- the method operations continue in operation 814 . If there are previously loaded substrates remaining to be processed, then the method operations continue in operation 804 as described above. If there are previously loaded substrates remaining to be processed, then the method operations can end.
- FIG. 9A shows multiple processing head process tools 600 , 640 in a manufacturing system 900 , in accordance with embodiments of the present invention.
- the manufacturing system 900 includes a front opening unified pod (FOUP) transport system 938 for handling and transporting FOUPs 930 A- 930 J.
- the load/unload ports 702 , 704 of the multiple processing head process tools 600 , 640 can accommodate a FOUP for handling and transporting the substrates.
- the controller 612 includes control subsystems for controlling the plasma signal 922 , for controlling the actuator position 923 , for detecting the end points of the various processing 924 , pressures and vacuum 925 , process source controls 926 and the process recipe 614 .
- Each of the control subsystems are linked to the respective hardware portions necessary for executing the control.
- the position controller 923 is linked to the actuators and other movable portions of the multiple processing head process tools 600 , 640 .
- the controller 612 also includes some suitable type of network interface 927 that provides a wired or wireless link 928 to a facility network 929 .
- FIG. 9B shows multiple processing head process tools 600 , 640 in a manufacturing facility 950 , in accordance with embodiments of the present invention.
- the multiple processing head process tools 600 , 640 and other process tools 952 are coupled by a network 927 to the facility control center 929 .
- the facility control center 929 includes a central controller 940 to provide a centralized access to the controllers 612 of each of the multiple processing head process tools 600 , 640 .
- FIG. 10 is a block diagram of an exemplary computer system 1000 for carrying out the processing, in accordance with embodiments of the present invention (e.g., the controller 612 and or the facility controller 940 , described above).
- the computer system 1000 includes a digital computer 1002 , a display screen (or monitor) 1004 , a printer 1006 , a floppy disk drive 1008 , a hard disk drive 1010 , a network interface 1012 , and a keyboard 1014 .
- the computer 1002 includes a microprocessor 1016 , a memory bus 1018 , random access memory (RAM) 1020 , read only memory (ROM) 1022 , a peripheral bus 1024 , and a keyboard controller (KBC) 1026 .
- RAM random access memory
- ROM read only memory
- KBC keyboard controller
- the computer 1002 can be a personal computer (such as an IBM compatible personal computer, a Macintosh computer or Macintosh compatible computer), a workstation computer (such as a Sun Microsystems or Hewlett-Packard workstation), or some other type of computer.
- a personal computer such as an IBM compatible personal computer, a Macintosh computer or Macintosh compatible computer
- a workstation computer such as a Sun Microsystems or Hewlett-Packard workstation
- some other type of computer such as a Sun Microsystems or Hewlett-Packard workstation
- the microprocessor 1016 is a general purpose digital processor, which controls the operation of the computer system 1000 .
- the microprocessor 1016 can be a single-chip processor or can be implemented with multiple components. Using instructions retrieved from memory, the microprocessor 1016 controls the reception and manipulation of input data and the output and display of data on output devices.
- the memory bus 1018 is used by the microprocessor 1016 to access the RAM 1020 and the ROM 1022 .
- the RAM 1020 is used by the microprocessor 1016 as a general storage area and as scratch-pad memory, and can also be used to store input data and processed data.
- the ROM 1022 can be used to store instructions or program code followed by the microprocessor 1016 as well as other data.
- the peripheral bus 1024 is used to access the input, output, and storage devices used by the digital computer 1002 .
- these devices include the display screen 1004 , the printer device 1006 , the floppy disk drive 1008 , the hard disk drive 1010 , and the network interface 1012 .
- the keyboard controller 1026 is used to receive input from keyboard 1014 and send decoded symbols for each pressed key to microprocessor 1016 over bus 1028 .
- the display screen 1004 is an output device that displays images of data provided by the microprocessor 1016 via the peripheral bus 1024 or provided by other components in the computer system 1000 .
- the printer device 1006 when operating as a printer, provides an image on a sheet of paper or a similar surface. Other output devices such as a plotter, typesetter, etc. can be used in place of, or in addition to, the printer device 1006 .
- the floppy disk drive 1008 and the hard disk drive 1010 can be used to store various types of data.
- the floppy disk drive 1008 facilitates transporting such data to other computer systems, and hard disk drive 1010 permits fast access to large amounts of stored data.
- the microprocessor 1016 together with an operating system operate to execute computer code and produce and use data.
- the computer code and data may reside on the RAM 1020 , the ROM 1022 , or the hard disk drive 1010 .
- the computer code and data could also reside on a removable program medium and loaded or installed onto the computer system 1000 when needed.
- Removable program media include, for example, CD-ROM, PC-CARD, floppy disk, flash memory, optical media and magnetic tape.
- the network interface 1012 is used to send and receive data over a network connected to other computer systems.
- An interface card or similar device and appropriate software implemented by the microprocessor 1016 can be used to connect the computer system 1000 to an existing network and transfer data according to standard protocols.
- the keyboard 1014 is used by a user to input commands and other instructions to the computer system 1000 .
- Other types of user input devices can also be used in conjunction with the present invention.
- pointing devices such as a computer mouse, a track ball, a stylus, or a tablet can be used to manipulate a pointer on a screen of a general-purpose computer.
- the invention may employ various computer-implemented operations involving data stored in computer systems. These operations are those requiring physical manipulation of physical quantities. Usually, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and otherwise manipulated. Further, the manipulations performed are often referred to in terms, such as producing, identifying, determining, or comparing.
- the invention also relates to a device or an apparatus for performing these operations.
- the apparatus may be specially constructed for the required purposes, or it may be a general purpose computer selectively activated or configured by a computer program stored in the computer.
- various general purpose machines may be used with computer programs written in accordance with the teachings herein, or it may be more convenient to construct a more specialized apparatus to perform the required operations.
- An exemplary structure for the invention is described below.
- the embodiments of the present invention can also be defined as a machine that transforms data from one state to another state.
- the transformed data can be saved to storage and then manipulated by a processor.
- the processor thus transforms the data from one thing to another.
- the methods can be processed by one or more machines or processors that can be connected over a network. Each machine can transform data from one state or thing to another, and can also process data, save data to storage, transmit data over a network, display the result, or communicate the result to another machine.
- the invention can also be embodied as computer readable code and/or logic on a computer readable medium.
- the computer readable medium is any data storage device that can store data which can thereafter be read by a computer system. Examples of the computer readable medium include hard drives, network attached storage (NAS), logic circuits, read-only memory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical and non-optical data storage devices.
- the computer readable medium can also be distributed over a network coupled computer systems so that the computer readable code is stored and executed in a distributed fashion.
- FIG. 11A shows a schematic diagram of a processing head 1100 , in accordance with embodiments of the presenting invention.
- the processing head 1100 includes a single microchamber 202 A shown in four positions 1102 A. 1 - 1102 A. 4 relative to the substrate 102 A.
- the chuck 201 A is supporting the substrate 102 A.
- the biasing source 232 B provides a bias power at the desired frequency (bias signal 1104 ) to the chuck 201 A.
- the bias signal 1104 is applied to the substrate 102 A though contact between the substrate and surface of the chuck 201 A.
- the microchamber 202 A emits the electromagnetic energy 1103 A from the plasma 244 from the open side 1101 of the microchamber (e.g., toward the substrate 102 A and/or toward the edge ring 208 ).
- the electromagnetic energy 1103 A is directed somewhat toward the edge ring 208 however, as the current path leads through the substrate 102 A to the chuck 201 A, then at least some of the current is pulled toward the edge of the substrate 102 A. This current also pulls the ions toward the edge of the substrate 102 A. As a result the edge and the region adjacent to the edge of the substrate can gain additional processing time and residence time as compared to other portions of the substrate 102 A.
- the current path 1103 A. 2 leads substantially straight through the substrate 102 A to the chuck 201 A.
- the current path 1103 A. 3 leads substantially straight through the substrate 102 A to the chuck 201 A.
- the current path 1103 A. 4 leads substantially straight through the substrate 102 A to the chuck 201 A but possibly not as uniformly toward the edge ring 208 .
- This current can also pull some of the ions toward the edge of the substrate 102 A.
- the edge and the region adjacent to the edge of the substrate can gain additional processing time and residence time as compared to other portions of the substrate 102 A
- FIG. 11B shows a schematic diagram of a processing head 1110 , in accordance with embodiments of the presenting invention.
- the processing head 1110 includes an dynamic chuck 1108 .
- the dynamic chuck 1108 provides the support and the biasing to the opposite side of the substrate 102 A and to the edge ring 208 .
- a relatively thin layer of support material 1106 is provided between the chuck 201 A and the substrate 102 A.
- a relatively thin layer of support material 1106 A is provided and between the chuck 201 A and the edge ring 208 .
- the support material 1106 , 1106 A can be one piece. Alternatively, the support material 1106 , 1106 A can be separate.
- the chuck 1108 reduces the concentrating of the ions at the edges of the substrate 102 A as described above.
- the dynamic chuck 1108 can further reduce concentration of the ions at the edges of the substrate 102 A and also gain electrical efficiencies. As the microchamber 202 A only needs the corresponding portion of the edge ring 208 and/or the substrate 102 A to be biased.
- FIG. 11C is a flowchart diagram that illustrates the method operations 1150 performed in forming a plasma in the microchamber 202 A and moving the microchamber and biasing corresponding portions of the dynamic chuck 1108 , in accordance with one embodiment of the present invention.
- the operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations.
- the method and operations 1150 will now be described.
- a plasma is formed in the microchamber 202 A in position 1102 A. 1 .
- the dynamic chuck 1108 need only bias corresponding portion 1104 A. 1 of the dynamic chuck so that the corresponding portion 1109 A.
- the current path and ion path is substantially restricted to only the corresponding portion 1109 A. 1 of the edge ring 208 between the microchamber 202 A and the corresponding portion 1104 A. 1 of the dynamic chuck 1108 .
- the microchamber is moved to a subsequent position 1102 A. 2 .
- the dynamic chuck 1108 need only bias corresponding portion 1104 A. 2 of the dynamic chuck so that the corresponding portion 1109 A. 2 of the substrate 102 A is biased.
- the current path and ion path is substantially restricted to only the corresponding portion 1109 A. 2 of the substrate 102 A between the microchamber 202 A and the corresponding portion 1104 A. 2 of the dynamic chuck 1108 .
- the method operations continue in operations 1156 and 1158 for subsequent portions of the substrate and/or edge ring 208 and the method operations can end.
- the dynamic chuck 1108 need only bias corresponding portion 1104 A. 3 of the dynamic chuck so that the corresponding portion 1109 A. 3 of the substrate 102 A is biased.
- the current path and ion path is substantially restricted to only the corresponding portion 1109 A. 3 of the substrate 102 A between the microchamber 202 A and the corresponding portion 1104 A. 3 of the dynamic chuck 1108 .
- the dynamic chuck 1108 need only bias corresponding portion 1104 A. 4 of the dynamic chuck so that the corresponding portion 1109 A. 4 of the substrate 102 A and the edge ring 208 is biased.
- the current path and ion path is substantially restricted to only the corresponding portion 1109 A. 4 of the substrate 102 A between the microchamber 202 A and the corresponding portion 1104 A. 4 of the dynamic chuck 1108 .
- the dynamic chuck 1106 can include a many electrically separate portions that can be selectively biased so that only those areas of the substrate 102 A that require biasing at any given time can be selectively biased.
- FIG. 11D shows a schematic diagram of a processing head 1120 , in accordance with embodiments of the presenting invention.
- the dynamic chuck 1108 includes a movable portion 1124 of the dynamic chuck that can be moved corresponding locations (e.g., 1104 A. 1 - 1104 A. 4 , etc.) to the location (e.g., locations 1102 A. 1 - 1102 A. 4 , etc.) of the microchamber 202 A.
- An actuator 1122 is coupled to the movable portion 1124 by link 1121 . The actuator 1122 moves the movable portion 1124 as needed.
- the movable portion 1124 of the dynamic chuck can be the only portion of the dynamic chuck that is biased and thus the biased movable portion can be moved to correspond to microchamber location and the remaining portion of the substrate support 1106 and edge ring support 1106 A are not biased unless aligned with the microchamber 202 A.
- processing head 1100 , 1120 is described above with only one microchamber 202 A, it should be understood that the processing head 1100 , 1120 can include multiple microchambers as described herein.
- dynamic chuck 1108 can have multiple movable orations 1104 A and/or the multiple portions that can be selectively biased that can be substantially aligned and correspond with each one of the multiple microchamber 202 A in the processing head 1100 , 1120 .
- FIGS. 12A-12C are plasma microchambers 1200 , 1210 , 1220 , in accordance with embodiments of the present invention.
- FIG. 12D is a top view of a linear multiple microchamber system 1240 , in accordance with embodiments of the present invention.
- FIG. 12E is a side view of a linear multiple microchamber system 1250 , in accordance with embodiments of the present invention.
- FIG. 12F is a top view of a system 1260 including two, linear multiple microchamber systems 1262 , 1262 feeding substrates to a cleaning line 1266 , in accordance with embodiments of the present invention.
- FIG. 12G is a top view of a system 1270 with two multiple fan-like shape microchambers, in accordance with embodiments of the present invention.
- FIG. 12H is a graph 1280 of various plasma sources, in accordance with embodiments of the present invention.
- FIG. 12I is a graph 1290 of plasma densities of various types of plasma, in accordance with embodiments of the present invention.
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Abstract
Description
- This application claims priority from U.S. Provisional Patent Application No. 61/266,476 filed on Dec. 3, 2009 and entitled “Small Plasma Chamber Systems and Methods,” which is incorporated herein by reference in its entirety for all purposes.
- The present invention relates generally to plasma processing of substrates, and more particularly, to methods and systems for plasma processing of a portion of a substrate surface using a small plasma processing chamber.
-
FIG. 1 is a typicalplasma processing chamber 100. The typicalplasma processing chamber 100 encloses theentire substrate 102 to be processed. Thesubstrate 102 is loaded into theprocessing chamber 100. Theprocessing chamber 100 is then sealed and purged to evacuate undesired gases though theoutlet 112. Apump 114 may assist in drawing out the undesired gases. Purge gases or processing gases may be pumped into theprocessing chamber 100 from a processing and/or purginggas source 120 coupled to aninput port 122. The purge gases or processing gases may be pumped out theprocessing chamber 100 to dilute or otherwise remove the undesired gases. - An electrical connection is made to the
substrate 102, typically through anelectrostatic chuck 104. Aplasma signal source 108B is coupled to thesubstrate 102, typically through theelectrostatic chuck 104. Aplasma signal source 108A is coupled to anemitter 106 in the processing chamber. - The desired gas(es) at the desired pressures and flowrates are then input to the
processing chamber 100. Theplasma 110 is initiated by outputting a processing signal (e.g., RF) at the desired frequency and potential from the signal source 108 and imparting the emitted energy to the gases in theprocessing chamber 100.Ions 110A generated by the plasma directly impinge on the entire surface of thesubstrate 102. Theplasma 110 also generates heat which is absorbed at least in part by thesubstrate 102. Theelectrostatic chuck 104 can also cool thesubstrate 102. - The typical
plasma processing chamber 100 is larger than thesubstrate 100 to be processed so that the entire substrate can be processed within the processing chamber at one time. As the typicalplasma processing chamber 100 is increased in size the amount of purging gas and the time required to purge theprocessing chamber 100 increases. As a result, alarger processing chamber 100 has an increased purging time before and after thesubstrate 102 is processed. - The throughput of the
typical processing chamber 100 is substantially determined by a sum of the substrate loading time, the preprocessing purging time, the substrate processing time, the post-processing purging time and the unloading time. Therefore, the increased purging time of thelarger processing chamber 100 decreases the throughput as the size of thesubstrate 102 increases. - The entire surface of the
substrate 102 is processed (e.g., exposed to the plasma 110) at the same time in thetypical processing chamber 100. Theplasma 110 must be sufficiently large enough to substantially evenly expose the entire surface of thesubstrate 102 at one time. As the size of thesubstrate 102 increases the amount of energy required to generate theplasma 110 increases approximately with the square of the area of the surface of the substrate. As a result, the energy requirements forlarger substrates 102 increases and the throughput decreases. - In view of the foregoing, there is a need for improved plasma processing systems and methods that is scalable to ever larger substrates without sacrificing throughput.
- Broadly speaking, the present invention fills these needs by providing improved plasma processing systems and methods that are scalable to ever larger substrates without sacrificing throughput. It should be appreciated that the present invention can be implemented in numerous ways, including as a process, an apparatus, a system, computer readable media, or a device. Other aspects and advantages of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
- One embodiment provides a plasma etch processing tool, including a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support.
- The power supply can have a setting that is proportional to a volume in the plasma microchamber. The power supply can include a first power supply coupled to the plasma microchamber and a second power supply coupled to the substrate support.
- The substrate support can be a chuck. The chuck can have a chucking area that is less than or equal an area of the substrate.
- The plasma microchamber is movable relative to the substrate. Only a portion of the substrate support may be biased and wherein the biased portion of the substrate support is substantially aligned with the plasma microchamber. The biased portion of the substrate support can be movable for maintaining substantial alignment with the movable plasma microchamber.
- The plasma microchamber can have a microchamber volume and wherein the microchamber volume contains a plasma.
- The plasma etch processing tool can also include a process material source coupled to the plasma microchamber and a vacuum source coupled to the plasma microchamber. The vacuum source can have an adjustable vacuum source.
- The plasma etch processing tool can also include a sealing structure. The sealing structure can include a sealing ring. The sealing structure can include an outer chamber around the microchamber.
- The plasma microchamber can be movable relative to the substrate and an actuator connected to the substrate support can also be included. The actuator can be configured to move the substrate support so as to expose a selected region of substrate surface, when placed over the substrate support. The actuator can be configured to move in one or more of a rotational direction, an angular direction, a linear direction, a non-linear direction, or a pivoting direction.
- The plasma microchamber can be movable relative to the substrate and an actuator can be connected to the plasma microchamber, the actuator can be configured to move the plasma microchamber so as to expose a selected region of substrate surface, when placed over the substrate support. The actuator can be configured to move in one or more of a rotational direction, an angular direction, a linear direction, a non-linear direction, or a pivoting direction.
- The substrate support can be configured to rotate the substrate. The substrate support can include an edge ring. At least a portion of the edge ring can be biased. At least a portion of the edge ring can be replaceable. At least a portion of the edge ring can be reactive with a plasma in the plasma microchamber. The edge ring can be adjacent to at least a portion of an edge of a substrate when present on the substrate support. The edge ring can be adjacent to a curved portion of an edge of a substrate when present on the substrate support.
- The microchamber can include multiple inlet ports and multiple outlet ports. At least one of the inlet ports is coupled to one of a multiple process material sources. At least one of the inlet ports can be coupled to a purge material source. At least one of the outlet ports can be coupled to a vacuum source.
- The plasma etch processing tool can also include at least one monitoring instrument. The monitoring instrument can monitor a byproduct output from the plasma microchamber. The monitoring instrument can monitor a spectrum of light emitted from the plasma microchamber. The monitoring instrument can be coupled to a controller. The monitoring instrument can monitor the surface of the substrate.
- An inner volume of the plasma microchamber can have a constant width along a length of the plasma microchamber. An inner volume of the plasma microchamber can have a width that varies along a length of the plasma microchamber. An inner volume of the plasma microchamber can have a constant depth that along a length of the plasma microchamber. An inner volume of the plasma microchamber can have a depth that varies along a length of the plasma microchamber. An inner volume of the plasma microchamber can have a depth that is adjustable along a length of the plasma microchamber.
- The plasma etch processing tool can include multiple plasma microchambers. The multiple plasma microchambers can have a linear arrangement. The multiple plasma microchambers can have a rotary arrangement.
- Another embodiment provides a method of performing a plasma etch including forming a plasma in a plasma microchamber. The microchamber including a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. The plasma microchamber is moved relative to a surface of the substrate, when present in the substrate support, until a selected one of multiple surfaces of the substrate is exposed to the plasma.
- The method can also include drawing multiple plasma byproducts out of the plasma microchamber. The plasma byproducts are drawn out of the plasma microchamber near a top portion of the plasma microchamber.
- Other aspects and advantages of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
- The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings.
-
FIG. 1 is a typical plasma processing chamber. -
FIGS. 2A-2C show embodiments of a plasma processing system that process selected portions of a full surface of the surface being processed in accordance with embodiments of the present invention. -
FIG. 2D is a flowchart diagram that illustrates the method operations performed in forming a plasma in the microchamber, in accordance with embodiments of the present invention. -
FIGS. 3A-3F show detailed cross-sectional views of microchambers, in accordance with embodiments of the present invention. -
FIG. 3G is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3H is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3I is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3J is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3K is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3L is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIG. 3M is a top view of a microchamber, in accordance with embodiments of the present invention. -
FIGS. 3N-3P are lengthwise cross-sectional views of microchambers, respectively, in accordance with embodiments of the present invention. -
FIGS. 4A-4C show a single processing head with multiple microchambers, in accordance with embodiments of the present invention. -
FIG. 4D shows a single processing head with multiple microchambers, in accordance with embodiments of the present invention. -
FIG. 5 is a flowchart diagram that illustrates the method operations performed in processing a surface of the substrate with a processing head having multiple processing chambers, in accordance with embodiments of the present invention. -
FIGS. 6A-6B show a simplified schematic of multiple station process tools, in accordance with embodiments of the present invention. -
FIG. 7 shows a simplified schematic of a process tool, in accordance with embodiments of the present invention. -
FIG. 8 is a flowchart diagram that illustrates the method operations performed in processing substrates with a multiple processing head process tool, in accordance with embodiments of the present invention. -
FIG. 9A shows multiple processing head process tools in a manufacturing system, in accordance with embodiments of the present invention. -
FIG. 9B shows multiple processing head process tools in a manufacturing facility, in accordance with embodiments of the present invention. -
FIG. 10 is a block diagram of an exemplary computer system for carrying out the processing, in accordance with embodiments of the present invention. -
FIG. 11A shows a schematic diagram of a processing head, in accordance with embodiments of the present invention. -
FIG. 11B shows a schematic diagram of a processing head, in accordance with embodiments of the present invention. -
FIG. 11C is a flowchart diagram that illustrates the method operations performed in forming a plasma in themicrochamber 202A and moving the microchamber and biasing corresponding portions of the dynamic chuck, in accordance with one embodiment of the present invention. -
FIG. 11D shows a schematic diagram of a processing head, in accordance with embodiments of the present invention. -
FIGS. 12A-12C are plasma microchambers, in accordance with embodiments of the present invention. -
FIG. 12D is a top view of a linear multiple microchamber system, in accordance with embodiments of the present invention. -
FIG. 12E is a side view of a linear multiple microchamber system, in accordance with embodiments of the present invention. -
FIG. 12F is a top view of a system including two, linear multiple microchamber systems feeding substrates to a cleaning line, in accordance with embodiments of the present invention. -
FIG. 12G is a top view of a system with two multiple fan-like shape microchambers, in accordance with embodiments of the present invention. -
FIG. 12H is a graph of various plasma sources, in accordance with embodiments of the present invention. -
FIG. 12I is a graph of plasma densities of various types of plasma, in accordance with embodiments of the present invention. - Several exemplary embodiments for improved plasma processing systems and methods that are scalable to ever larger substrates without sacrificing throughput will now be described. It will be apparent to those skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein.
- I. Less than Full Surface Etch Processing
- Present semiconductor processing is mostly focused on 200 mm and 300 mm semiconductor wafers and flat panel substrates of different shapes and sizes. As the need for throughput grows, future semiconductor wafers and substrates will be larger, such as the next generation of semiconductor wafers that are 450 mm and larger. In the typical plasma processing, the plasma chamber volume grows much faster than the diameter of the wafer intended to be process within the plasma chamber. As the volume of the plasma chamber increases the material costs of building the plasma chamber also increase. Also as the volume of the plasma chamber increases, the plasma becomes more difficult to control and maintain consistency throughout the chamber. Further, as the volume increases the energy requirements to generate the plasma also increases thus driving the energy costs higher yet yielding less consistent results. Reducing the volume of the plasma chamber reduces the materials required to produce the plasma chamber and also increases consistency and reduces the energy requirements. A small plasma chamber, e.g., a microchamber, is more easily scalable to larger and smaller area surfaces to be exposed to the plasma. It should be understood that the semiconductor substrate to be processed or exposed to the plasma can be any surface such as a semiconductor substrate, a flat panel substrate of any shape or size.
-
FIGS. 2A-2C show embodiments of a plasma processing system that process selected portions of a full surface of the surface being processed in accordance with embodiments of the present invention. Referring now toFIG. 2A which shows a side view of one portion of thesystem 204A includes amicrochamber 202A formed by ahousing 230 having aninternal volume 231. Theinternal volume 231 is bounded on three sides bychamber insert 230. The fourth side of theinternal volume 231 is formed by a portion of the surface being processed in this instance, aportion 102A′ of the surface of thesemiconductor substrate 102A. - The
substrate 102A is supported on achuck 201A. Thechuck 201A can have a width equal to or slightly smaller than or slightly larger than the width of thesubstrate 102A. Thechuck 201A can be heated or cooled as may be desired for the processing of the surface of thesubstrate 102A. By way of exampletemperature control system 234 for heating or cooling is coupled to thechuck 210. Thechuck 201A can also be coupled to abiasing source 232B. Thechuck 201A can also be movable so as to move thesubstrate 102A in various directions. By way of example, thechuck 201A can rotate thesubstrate 102A. Alternatively or additionally, thechuck 201A can move thesubstrate 102A laterally relative to themicrochamber 202A and the chuck can move the substrate closer or further away from the microchamber. - The
microchamber 202A has multiple inlet andoutlet ports 216A-216D that are coupled to process material sources or purge andvacuum sources 220A-220D. The process materials or purge are delivered to themicrochamber 202A via at least one of the inlet andoutlet ports 216A-216D, 216A′. As the plasma processing occurs in themicrochamber 202A the plasma byproducts are drawn away from the microchamber through at least one of the inlet andoutlet ports 216A-216D, 216A′. - The plasma is contained within the
microchamber 202A by the physical constraints of the inner chamber surfaces and the flow of the gases within the microchamber. Themicrochamber 202A is sealed around the perimeter of the surface being processed byseal 212. - The
microchamber 202A is movable relative to the surface of thesubstrate 102A being processed. Themicrochamber 202A can be movable or stationary and the surface of thesubstrate 102A being processed can be movable or stationary. - As shown in
FIG. 2A , thesubstrate 102A has a width L1 and acover 210 has a width L2 that is sufficiently wide or long enough that the substrate and/or themicrochamber 202A can move relative to one another so that the microchamber can pass over the entire surface of the substrate and remain between theseals 212. In this manner the environment in thespace 214 is controlled by the process materials and/or vacuum or gas flows provided viaports 216A-216D and 216A′. - The
outlet ports microchamber 202A so as to draw out the plasma byproducts and minimize interference with the ions flowing from the plasma to theportion 102A′ of the surface of thesemiconductor substrate 102A. - The precise width of the
minimal space 208A can be selected according to the plasma processing being applied to the surface of the substrate. One ormore ports 208B may be coupled to theminimal space 208A. A process material or purge source and/orvacuum source 220E can be coupled to theport 208B. In this manner processing material can be delivered through theminimal space 208A and/or a vacuum can be applied to theport 208B so as to aid in controlling the environment within thespace 214. - Referring to
FIG. 2B which shows a top view of themicrochamber 202A. A portion of thecover 210 is shown cut away so as to show theedge ring 208 and theseal 212 around to the perimeter of the edge ring and thesubstrate 102A to be processed by the microchamber. It should be understood that themicrochamber 202A is shown having a width W1 less than the width W2 of thesubstrate 102A be processed by the plasma, however this is merely an exemplary embodiment as will be shown in further detail in other figures that the microchamber can have several different shapes, depths, widths, lengths and configurations. It should also be understood that while thesubstrate 102A is shown in a substantially round shape it should be understood that this is merely an exemplary shape and that the substrate can be in any suitable or desirable shape and size. By way of example thesubstrate 102A can be an irregular shape or a square shape or an elliptical shape or any other shape that can be placed within a fixture so that the microchamber can be moved over the surface of thesubstrate 102A. - Further as shown in
FIG. 2B , anactuator 240 is coupled to themicrochamber 202A by acoupling arm 241. Theactuator 240 is capable of moving themicrochamber 202A relative to the surface of thesubstrate 102A. As discussed above thecover 210 can move with themicrochamber 202A so as to maintain contact with and a seal to theseal 212. In this manner themicrochamber 202A can move relative to the surface of thesubstrate 102A and at the same time maintain a controlled environment over the surface of the substrate. - The
microchamber 202A can also include one or moreinsitu monitoring instruments 211A-D. Theinsitu monitoring instruments 211A-D can be optical surface scanning instruments, optical spectrum or brightness analysis instruments, or magnetic instruments or chemical analysis instruments as are well known in the art. Theinsitu monitoring instruments 211A-D are coupled to a system controller. - One or more of the
insitu monitoring instruments 211A-D can analyze the surface of the substrate before, during and/or after processing by themicrochamber 202A. By way of example,instrument 211A can measure the surface of thesubstrate 102A and a controller can use the measurement frominstrument 211A to determine the operational parameters of a plasma process to apply to the surface of thesubstrate 102A. - Similarly,
instrument 211C can measure the results of the plasma processing of the surface. The measured results frominstrument 211C can be used by the controller to determine operational parameters and/or additional processing that may be subsequently needed for the surface of thesubstrate 102A. - Further,
instrument 211B can measure the results of the plasma processing of the surface as the plasma is applied to the surface of the substrate. The measured results frominstrument 211B can be used by the controller to determine operational parameters and/or additional processing that can be applied to the surface of thesubstrate 102A as the plasma is being applied to the surface of thesubstrate 102A. - One or more of the
insitu monitoring instruments 211A-D can analyze the plasma byproducts. By way of example instrument 211D can measure the results of the plasma processing of the surface as the plasma is applied to the surface of the substrate by analyzing the plasma byproducts being output from themicrochamber 202A. The measured results from instrument 211D can be used by the controller to determine operational parameters and/or additional processing that can be applied to the surface of thesubstrate 102A as the plasma is being applied to the surface of thesubstrate 102A of the substrate before, during and/or after processing by themicrochamber 202A. - The
insitu monitoring instruments 211A-D can be used by the controller to measure results of the plasma processing and adjust plasma operational parameters accordingly to gain the desired result. For example, the measured results from one or more of theinstruments 211A-D may indicate a longer or shorter plasma processing time is needed or a greater or lesser flowrate and/or pressure of one or more plasma source materials or a change in biasing or frequency is needed or a change in temperature is needed to achieve the desired result. - The
insitu monitoring instruments 211A-D can be used by the controller to detect and map local and global non-uniformities on the surface of thesubstrate 102A. The controller can then direct the appropriate follow-up processing to correct the detected non-uniformities. The controller can also use the detected non-uniformities to adjust the plasma operational parameters for plasma processing subsequent substrates. - The
microchamber 202A may include an optical view port for one ormore instruments 211A-D to perform a spectrum analysis or brightness analysis of theplasma 244 inside themicrochamber 202A. One or more of theinstruments 211A-D can be used to detect and endpoint of the plasma processing. - The controller can also adjust plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of the
microchamber 202A. By way of example, one or more of theinstruments 211A-D can be used to monitor the plasma and the resulting plasma byproduct build-up on the inner surfaces of themicrochamber 202A. Similarly, the controller can adjust the plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of themicrochamber 202A according to an operational sequence or a timer or a recipe in the controller or in response to a controller input (e.g., received from an operator). Adjusting the plasma operational parameters to compensate for a build-up of plasma by-products on the inner surfaces of themicrochamber 202A can also include adjusting the plasma operational parameters to remove the all or a portion of the build-up of plasma by-products on the inner surfaces of the microchamber. - The controller can also adjust plasma operational parameters as the distance D1 between the
microchamber 202A and the surface of thesubstrate 102A varies. By way of example the D1 can be adjusted for various operational reasons or physical reasons and the plasma operational parameters can be adjusted to compensate for the different distance so as to achieve the desire result. -
FIG. 2C is a more detailed side view of themicrochamber 202A, in accordance with embodiments of the present invention.FIG. 2D is a flowchart diagram that illustrates themethod operations 250 performed in forming a plasma in themicrochamber 202A, in accordance with embodiments of the present invention. The operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method andoperations 250 will now be described. In anoperation 252, thecover 210 is sealed over thesubstrate 102A by compressing theseal 212 between thesupport 206 and thecover 210. Theseal 212 is compressed by moving thecover 210 indirection 227 or moving thesupport 206 indirection 225 so that thecover 210 indirection 227 are moved toward each other so as to compress theseal 212 between thecover 210 and thesupport 206. - In an
operation 254, themicrochamber 202A andspace 214 are purged and or brought to vacuum. During a purge process, a purge material (e.g., an inert purge gas or liquid or vapor or other fluid or combinations thereof) is delivered from one or more of the process material orpurge sources 220A-D and/or 220A′ to at least one of theports 216A-D and/or 216B′. - In an
operation 256, aprocess material 242 is provided by one or more of theprocess material sources 220A-D and injected into theplasma chamber 202A through at least one of theports 216A-D and/or 216B′. By way of example, theprocess material 242 can be provided by one or more of theprocess material sources 220A-D and injected into themicrochamber 202A throughport 216B′. Providing the process material can also include mixing two or more process materials insitu and on demand. The mixing can occur in a manifold or mixing point (not shown) outside themicrochamber 202A. The mixing of the two or moreplasma source materials 220A′, 220A″ can also occur inside themicrochamber 202A. - In an
operation 258, a plasma signal (typically RF or microwave) is generated by asignal source 232A and applied to the antenna/coil 233 and thechuck 201A at the desired frequency, voltage, waveform, duty cycle and current. In an operation 260 aplasma 244 generatesions 246 and heat. Theions 246 and heat that interact with thefirst portion 102A′ of the surface of thesemiconductor substrate 102A and produceplasma byproducts 248. - In an
operation 262, theplasma byproducts 248 are drawn out of themicrochamber 202A. Theplasma byproducts 248 can be drawn out of themicrochamber 202A by applying a vacuum to at least one of theports 216A-D and/or 216B′. By way of example, a vacuum can be applied toports 216A-D and drawplasma byproducts 248A-C out of themicrochamber 202A. Drawing theplasma byproducts 248A-C out of themicrochamber 202A throughports 216A-D also draws theplasma byproducts 248A-C away from theions 246 and the portion of thesurface 102A′ being processed or exposed toplasma 244. Removing theplasma byproducts 248 from themicrochamber 202A reduces the possibility of the plasma byproducts interfering with theions 246 contacting the selectedportion 102A′ of the surface of thesubstrate 102A. Removing theplasma byproducts 248 from themicrochamber 202A reduces the possibility of the plasma byproducts attaching to theinner surfaces 203A-C of themicrochamber 202A. If theplasma byproducts 248 attach to and build up on theinner surfaces 203A-C of themicrochamber 202A. Such buildup can change the architecture and overall shape of the microchamber which can cause changes inplasma 244 density and distribution within the microchamber and more specifically change the plasma density applied to the surface of thesubstrate 102A. - In an
operation 264, themicrochamber 202A can be moved in at least one ofdirections substrate 102A until asubsequent portion 102A″ of the surface of the substrate is aligned with the microchamber. Themicrochamber 202A is then formed by theinner surfaces 203A-E and thesecond portion 102A″ of the surface of thesubstrate 102A and the plasma is applied to thesubsequent portion 102A″ of the surface of thesubstrate 102A in anoperation 266. - In an
operation 268, if there are additional portions of the surface of the substrate to be processed, the method operations continue in operations 264-266 as described above. If there are no additional portions of the surface of the substrate to be processed, the method operations end. - An edge platform or
edge ring 208 can also be included as shown inFIGS. 2A-2C . The edge ring orplatform 208 provides additional processing surface where themicrochamber 202A can be located during an initial plasma phase and a shut down of the plasma or any other time when the plasma can be operated but it is not desired to have the plasma in contact with the surface of thesubstrate 102A. - The edge ring or
platform 208 is separated from the surface of thesubstrate 102A by aminimal space 208A. The edge ring orplatform 208 can be adjacent to the entire perimeter of thesubstrate 102A, as shown. Alternatively, the edge ring orplatform 208 can be adjacent to only one or more portions of the perimeter of the substrate. The edge ring orplatform 208 can be used with any shape substrate whether the substrate is round, rectangular or some other shape (irregular, any polygon, etc.). A partial edge ring orplatform 208 is described in more detail in commonly owned U.S. Pat. No. 7,513,262, entitled “Substrate Meniscus Interface and Methods for Operation” by Woods, which is incorporated by reference herein, in its entirety and for all purposes. - The edge ring or
platform 208 can perform several functions. One function is a microchamber starting, stopping and “parking” location for the microchamber or other processing chamber as described in U.S. Pat. No. 7,513,262. - Another function is to reduce the concentration of the
plasma 244 on the edge of thesubstrate 102A. Without theedge ring 208, as a microchamber passes onto the edge of thesubstrate 102A, the volume of the microchamber would change considerably because the distance to that side of the microchamber formed by the substrate would change by the thickness of thesubstrate 102A. This change in microchamber volume will change the plasma concentration of ions and even the plasma shape. - Further, as the microchamber passes onto the edge of the
substrate 102A, theions 246 emitted from theplasma 244 and be focused on the relatively small area of the edge of thesubstrate 102A. As a result the reactivity of theions 244 will also be focused on the relatively small area of the edge of thesubstrate 102A and the relative processing activity would be greatly increased on the edge of thesubstrate 102A as compared to other portions of the surface of the substrate. - With the edge ring or
platform 208 maintained at substantially the same potential as the substrate, the edge ring orplatform 208 also maintains a substantially constant microchamber plasma volume and a substantially constant ion concentration as the plasma transitions from the edge ring or platform across the edge of thesubstrate 102A and fully onto the surface of thesubstrate 102A. - The controller can also adjust the plasma parameters as the
microchamber 202A passes over and processes the edge of the substrate. Typically, the edge of the substrate includes a bevel edge portion that is not typically used as part of the active device structures as it is used for handling the substrate. Further, the bevel edge is typically rounded or beveled and as such can change the volume of the microchamber as the bevel edge passes through the microchamber. As a result the controller can also adjust the plasma parameters as the microchamber to process the bevel edge to achieve the desired result. - The
edge ring 208 can be a sacrificial material that is processed by the microchamber similar to the processing of thesubstrate 102A. The edge ring can include multiple layers or portions. By way of example theedge ring 208 can include alayer 208A. Thelayer 208A may be sacrificial and the remaining portion of the edge ring substantially resistant to the plasma processing of the microchamber. Alternatively, thelayer 208A may be substantially impervious or resistant to the plasma processing of the microchamber. - The
microchamber 202A can also include an insitu mixing point or manifold 221 where two or moreplasma source materials 220A′, 220A″ can be mixed as needed for use in themicrochamber 202A. The insitu mixing point or manifold 221 can also includeflow metering systems 221A for controlling the quantity, flowrate and pressures of theplasma source materials 220A′, 220A″ so that the desired mixture can be created immediately before the mixture is input to themicrochamber 202A. - The
microchamber 202A can also include atemperature control system 223A. Thetemperature control system 223A can heat or cool themicrochamber 202A and/or theplasma source materials 220A′ in the microchamber. In this way the temperature of themicrochamber 202A and/or theplasma source materials 220A′ can be controlled. - While the described and illustrated embodiments are shown in a horizontal orientation, it should be understood that the
microchamber 202A and be operated in any orientation. By way of example, themicrochamber 202A and be operated in an inverted orientation. Themicrochamber 202A and be operated in a vertical orientation or in any angle between horizontal and vertical. - The
substrate 102A can be rotated by thechuck 210 so that themicrochamber 202A can be passed over a first portion of the surface of the substrate (e.g., a first half or a first quadrant or other portion). Then thesubstrate 202A can be rotated so that themicrochamber 202A can be passed over a subsequent portion of the surface. Themicrochamber 202A may be moved less in this manner as the rotated substrate may allow the microchamber to move in an opposite direction for processing the second portion from the direction it moved while processing the first portion of the surface of the substrate. This can reduce the overall size of thecover 210 as the cover will not need to be larger than twice the width of the substrate and can be possibly only slightly larger than about the width of thesubstrate 102A. -
FIGS. 3A-3F show detailed cross-sectional views of microchambers 202A.1-202A.6, in accordance with embodiments of the present invention. The microchambers 202A.1-202A.6 have various locations, numbers and arrangements of inlet andoutlet ports outlet ports centerline 305, as shown, are merely exemplary and the inlet and outlet ports may be angled differently than shown and in any suitable angle. - By way of example, microchamber 202A.1 includes two
outlet ports inlet port 216B′. Oneoutlet port 216A in afirst side 203A is near atop portion 203C of the microchamber 202A.1.Inlet port 216B′ is located in thetop portion 203C of the microchamber. Asecond outlet port 216B is located further away from thetop portion 203C in aside 203B substantially opposite from thefirst side 203A. - With regard to shape: microchamber 202A.1 has a substantially trapezoidal cross-sectional shape; microchamber 202A.2 has a substantially triangular cross-sectional shape; microchamber 202A.3 has a rounded substantially triangular cross-sectional shape; microchamber 202A.4 has a substantially rectangular cross-sectional shape; microchamber 202A.5 has a substantially U-cross-sectional shape; microchamber 202A.6 has a substantially rectangular cross-sectional shape with rounded corners.
- In a further example, the illustrated combination and shapes of the microchambers 202A.1-6 and the corresponding arrangement of the inlet and
outlet ports FIG. 3E can include the port arrangement as shown inFIG. 3F or any combination of port arrangements. In addition to shape, the size can also be varied, to provide for more or less volume in the microchambers. -
FIG. 3G is a top view of amicrochamber 202A, in accordance with embodiments of the present invention. Themicrochamber 202A is similar to the microchambers described above and having a width W3 equal to or greater than width W2 of thesubstrate 102A. -
FIG. 3H is a top view of amicrochamber 321A, in accordance with embodiments of the present invention.Microchamber 321A is similar to themicrochamber 202A shown inFIG. 2B except themicrochamber 321A is substantially round.Microchamber 321A can also include aninstrument 324 to monitor the operation of the microchamber. -
FIG. 3I is a top view of amicrochamber 321B, in accordance with embodiments of the present invention.Microchamber 321B is similar to themicrochamber 321A shown inFIG. 3H except themicrochamber 321B is an annular microchamber forming a plasma in a substantiallyannular region 322B. Only the corresponding annular portion 302A of the surface of thesubstrate 102A is exposed to the plasma in theannular microchamber 321B. Themicrochamber 321B can also include aninstrument 324 to monitor the operation of the microchamber. -
FIG. 3J is a top view of amicrochamber 321C, in accordance with embodiments of the present invention.Microchamber 321C has an arced shape similar to but not necessarily the same curve as a portion of a curved edge of thesubstrate 102A. This allows for etch preparation of the wafer edge, such as to remove byproducts or buildups. This edge processing can also be done after full wafer processing is completed and in conjunction with other wafer clean operations. -
FIG. 3K is a top view of amicrochamber 321D, in accordance with embodiments of the present invention.Microchamber 321D is substantially similar tomicrochamber 202A as shown inFIG. 2B above, however themicrochamber 321D also includes apartial masking plate 331. Thepartial masking plate 331 can selectively mask a portion of the surface of thesubstrate 102A from the plasma in themicrochamber 321D. Thepartial masking plate 331 can be fixed or movable relative to themicrochamber 321D. Theactuator 240 can be coupled to thepartial masking plate 331 by acoupling arm 331A. -
FIG. 3L is a top view of amicrochamber 321E, in accordance with embodiments of the present invention.Microchamber 321E is substantially similar tomicrochamber 321D as shown inFIG. 3K above, however themicrochamber 321E also includes afull masking plate 333. Thefull masking plate 333 includes anopening 335 that can selectively expose a portion of the surface of thesubstrate 102A to the plasma in themicrochamber 321E. Thefull masking plate 333 can be fixed or movable relative to themicrochamber 321E. Theactuator 240 can be coupled to thefull masking plate 333 by acoupling arm 333A. -
FIG. 3M is a top view of amicrochamber 321F, in accordance with embodiments of the present invention.Microchamber 321F is substantially similar tomicrochamber 202A as shown inFIG. 3G above, however themicrochamber 321F has a fan-like shape having a narrowfirst end 323A having a width W4 and an oppositesecond end 323B, having a width W5, where W5 is wider than W4. W5 can be only slightly wider than W4 (e.g., W5=101% of W4). W5 can also be multiples of W4 (e.g., W5+n*W4 where n=any multiple, not necessarily an integer value between about 2 and about 20). The ratio of W4 and W5 can be a function of a rotation of the substrate around a rotary table as will be described in more detail below so that the residence time of thesubstrate 102A at thefirst end 323A is substantially the same as the residence time at thesecond end 323B. -
Microchamber 321F is coupled to anactuator 240 by couplingarm 241.Actuator 240 can pivotmicrochamber 321F indirections substrate 102A. In this manner the microchamber can be pivoted over the entire surface of thesubstrate 102A. -
FIGS. 3N-3P are lengthwise cross-sectional views ofmicrochambers Microchamber 321F has a constant depth D1 throughout the length of the microchamber. The depth of microchamber 321G varies along the length from a depth D1 at afirst end 313A to a depth D2 at asecond end 313B. The depth of microchamber 321G can be constant throughout afirst portion 313C of the microchamber and then vary along asecond portion 313D. - As shown in
FIG. 3P ,microchamber 335 has a variable depth and shape along the length of the microchamber. Themicrochamber 335 includes multiple depth andshape adjusters 331A-331L. The depth andshape adjusters 331A-331L are coupled to anactuator 330 bylinks 332. The depth andshape adjusters 331A-331L can be moved indirection actuator 330 to adjust a depth and shape of acorresponding portion 333A-333E of the microchamber. The depth andshape adjusters 331A-331L can be moved laterally (e.g., into and out of the plane of the view shown inFIG. 3P ) to vary the depth and shape of themicrochamber 335. The depth andshape adjusters 331A-331L can be biased at a desired potential or electrically isolated from the various potentials within themicrochamber 335. The depth andshape adjusters 331A-331L can be any suitable material or shape. The depth and shape of themicrochamber 335 can be adjusted to as desired to provide the desired plasma exposure to the surface of thesubstrate 102A. -
FIGS. 4A-4C show asingle processing head 402 withmultiple microchambers 404A-C, in accordance with embodiments of the present invention.FIG. 4A is a top view of theprocessing head 402.FIG. 4B is a side sectional view of theprocessing head 402.FIG. 4C is a bottom view of theprocessing head 402. - Referring now to
FIGS. 4A and 4B , theprocessing head 402 includes threeprocessing chambers 404A-C.The processing head 402 can move indirections substrate 102A such that each of theprocessing chambers 404A-C can be passed fully across the top surface of thesubstrate 102A. Theprocessing head 402 and thesubstrate 102A can move in the same direction at different speeds. Alternatively, theprocessing head 402 and thesubstrate 102A can move in different directions the same or different speeds. Each of the each of theprocessing chambers 404A-C can apply a corresponding process to the surface of thesubstrate 102A. - The
processing chambers 404A-C are shown as being substantially similar in size, shape, distribution and function, however it should be understood that each one of the processing chambers may have a different size, shape and function. It should also be understood that each processing head 404 can include any number from one or more processing chambers. -
Processing chamber 404A may have a different length, width and/or depth as compared to theother processing chambers chamber 404A may have a width less than the width of the substrate andprocessing chambers -
Processing chamber 404A may have a different shape, e.g., rectangular, rounded, annular, etc. as compared to theother processing chambers chamber 404A may have a rectangular shape andprocessing chambers -
Processing chambers 404A-404C can be distributed differently around theprocessing head 402. For example, processingchamber 404A may be located near an edge of theprocessing head 402 andprocessing chambers -
Processing chamber 404A may have a different function, e.g., plasma etch, plasma cleaning, passivation, non-plasma cleaning and or rinsing, etc. as compared to theother processing chambers chamber 404A may have a passivation function andprocessing chambers processing chambers 404A-404C can be a proximity head cleaning station as described in more detail in commonly owned U.S. Pat. No. 7,198,055, entitled “Meniscus, Vacuum, IPA Vapor, Drying Manifold” by Woods, and U.S. Pat. No. 7,234,477, entitled “Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces” by de Larios et al., and U.S. Pat. No. 7,069,937 B2, entitled “Vertical Proximity Processor” by Garcia et al, and U.S. Pat. No. 6,988,327, entitled “Methods and Systems for Processing a Substrate Using a Dynamic Liquid Meniscus” By Garcia et al, and the progeny and related applications and patents, all of which are incorporated by reference herein, in their entirety and for all purposes. - Referring now to
FIG. 4C , theprocessing head 402 includes threeprocessing chambers 404A-C.The processing chambers 404A-C appear as openings in the correspondingregions 408A-408C of the substantially flatbottom surface 402A of theprocessing head 402. - The
processing head 402 can also include abarrier system 410 separating each processing chamber from the adjacent processing chamber. Thebarrier system 410 can be physical barrier such as a seal or an electrical or magnetic field or a gas curtain and/or vacuum curtain or other fluid barrier. -
Multiple processing chambers 404A-404C in thesingle processing head 402 allows different processes to be conducted in each processing chamber. Further, one processing chamber may be used while a second processing chamber is cleaned without interrupting throughput. -
FIG. 4D shows asingle processing head 422 withmultiple microchambers 424A-D, in accordance with embodiments of the present invention. Theprocessing head 422 can rotate relative to thesubstrate 102A and thus pass the surface of thesubstrate 102A under at least one of the processing chamber in as little as a quarter turn (90 degree rotation). Theprocessing head 422 and/or thesubstrate 102A can rotate indirections 426A and/or 426B. Theprocessing head 422 and thesubstrate 102A can rotate in the same direction at different speeds. Alternatively, theprocessing head 422 and thesubstrate 102A can rotate in opposingdirections 426A and/or 426B at the same or different speeds. -
FIG. 5 is a flowchart diagram that illustrates themethod operations 500 performed in processing a surface of thesubstrate 102A with a processing head having multiple processing chambers, in accordance with embodiments of the present invention. The operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method andoperations 500 will now be described. In anoperation 502, a first processing chamber is placed over a first portion of thesubstrate 102A. In anoperation 504, a second processing chamber is placed over a second portion ofsubstrate 102A. Additional processing chambers can be placed over corresponding additional portions of thesubstrate 102A. - In an
operation 506, a first portion ofsubstrate 102A is processed with the first microchamber. In anoperation 508, a second portion ofsubstrate 102A is processed with the second microchamber. Additional processing chambers can process corresponding additional portions of thesubstrate 102A. It should be understood that the first and second portions of thesubstrate 102A can be processed simultaneously or at different times or for different lengths of time. Further, as described above, the process applied to each of the first and second portions of thesubstrate 102A can be the same or different. - In an
operation 510, the first and second microchambers are moved over subsequent portions ofsubstrate 102A. The first and second microchambers can be moved over subsequent portions ofsubstrate 102A simultaneously or at different times and rates of movement. The first and second microchambers can be moved in the same or different directions. In anoperation 512, the subsequent portions ofsubstrate 102A are processed with first and second microchambers. - In an
operation 518, if additional portions of thesubstrate 102A need to be processed then the method operations continue inoperation 510 as described above. If no additional portions of thesubstrate 102A need to be processed then the method operations can end. -
FIGS. 6A-6B show a simplified schematic of multiplestation process tools process tools 600, 540 increases throughput and reliability as the process heads can be processing thesubstrates 102A-102H in parallel. The multiple process heads 204A-204F, 244A-244F can be any type of processing heads or combinations thereof as described herein. - Referring to
FIG. 6A ,process tool 600 includes a rotary arrangement of process heads 204A-204F. Each of the process heads 204A-204F includes one or more microchambers 202A-202F.Multiple substrates 102A-102F can be supported and processed by corresponding ones of the process heads 204A-204F. The process heads 204A-204F and/or thesubstrates 102A-102F can move so that the substrates can be processed by one or more of the process heads. Therotary process tool 600 rotates indirections rotary process tool 600 also includes acontroller 612 having a recipe for controlling the operation of the rotary process tool. - Referring to
FIG. 6B ,process tool 640 includes a linear arrangement of process heads 244A-244F. Each of the process heads 244A-244F includes one or more microchambers 202A-202F.Multiple substrates 102A-102F can be supported and processed by corresponding ones of the process heads 204A-204F. The process heads 244A-244F and/or thesubstrates 102A-102F can move so that the substrates can be processed by one or more of the process heads. Thelinear process tool 600 can move the substrates and/or the process heads 244A-244F indirections linear process tool 600 also includes acontroller 612 having a recipe for controlling the operation of the linear process tool. Thesubstrates 102A-102F can also rotate about their axis at each one of the process heads 204A-204F, 244A-244F. - As described above, it should be understood that the process heads 204A-204F, 244A-244F and/or the
substrates 102A-102F can move in the same or different directions and at different rates of movement.Actuator 240 can be a stepper motor, a pneumatic actuator, a hydraulic actuator, an electromechanical actuator, a piezoelectric actuator for fine movement and or vibrating or any other suitable types of actuators. - Each of the processing heads 204A-204F, 244A-244F can be applying the same or different process to the
substrates 102A-102H. Similar to as was described above with regard to multiple processing chambers in a single processing head, eachprocessing head 204A-204F, 244A-244F can apply a respective process. By way of example, afirst processing head 204A, 244A can apply a plasma etch process to thesubstrate 102A. Then thesubstrate 102A is moved to processhead 204B, 244B where a finish plasma etch process is applied. Then thesubstrate 102A is moved to processhead 204C, 244C where a proximity head cleaning is performed. One or more of the processing heads 204A-204F, 244A-244F can apply a pre-cleaning process such as cleaning the backside ofsubstrate 102A-102H to make sure the chuck properly contacts the substrate. - As the processing heads 204A-204F, 244A-244F and
substrates 102A-102H can both be movable, then residence time for each substrate at each processing head can vary. By way of example,processing head 204A moves 12″ per minute and the substrate is stationary. As a result, the relative speed is 12″/min.Processing head 204B also moves 12″ per minute in a first direction and thesubstrate 102B moves 12″ per minute in a second, opposite direction, resulting in a relative speed of 24″ per minute. Similarly,processing head 204C moves in the first direction at 11″/min and thesubstrate 102B moves in the same first direction at 12″/min, yielding a relative speed of 1″/min. This type of different speed could be usable because inProcessing head 204A andprocessing head 204B the user desires a multiple rapid passes so that thesubstrate 102A is etched in many thin layers so that the relative processing time atstation -
FIG. 7 shows a simplified schematic of aprocess tool 700, in accordance with embodiments of the present invention. Theprocess tool 700 includes therotary process tool 600, as shown, or alinear process tool 640, not shown. Theprocess tool 700 also includes loading/unloadingports ports -
FIG. 8 is a flowchart diagram that illustrates themethod operations 800 performed inprocessing substrates 102A-102F with a multiple processinghead process tool 700, in accordance with embodiments of the present invention. The operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method andoperations 800 will now be described. In anoperation 802,substrates 102A-102F are loaded into the multiple processinghead process tool 700 through the loading/unloadingports substrates 102A-102F can be loaded before processing begins. Alternatively, thesubstrates 102A-102F can be loaded sequentially as the substrates are processed through the process heads 204A-204F, 244A-244F. Thesubstrates 102A-102F can be loaded sequentially or in batches. By way of example, one ormore substrates 102A-102F can be loaded through each of the loading/unloadingports - In an
operation 804, the processing heads 204A-204F and 244A-244F are sealed over thesubstrates 102A-102F and purged for preparation for processing. In anoperation 806, thesubstrates 102A-102F are processed by the respective processing heads 204A-204F. It should be understood that the processing heads 204A-204F and 244A-244F can process therespective substrates 102A-102F for the same or different time intervals as described elsewhere herein. Therespective substrates 102A-102F can be process in parallel to provide improved throughput. - In an
operation 808, thesubstrates 102A-102F are sequentially moved through the respective, subsequent processing heads 204A-204F and 244A-244F or the unloadport substrate 102A is progressed toprocessing head 204B andsubstrate 102B is progressed toprocessing head 204C andsubstrate 102C is progressed toprocessing head 204D andsubstrate 102D is progressed toprocessing head 204E andsubstrate 102E is progressed toprocessing head 204F. Assubstrate 102F has progressed through all of the processing heads 204A-204F then processing ofsubstrate 102F complete andsubstrate 102F is therefore progressed to the load/unloadport result processing head 204A is left without a substrate. - In an
operation 810 an inquiry is made to determine if there are additional substrates (e.g.,substrate 102L′) is available to be loaded. Ifsubstrate 102L′ is available to be loaded, then inoperation 812,substrate 102L is loaded inhead 204A and the method operations continue inoperation 804 as described above. - If, in
operation 810 there are no additional substrates available to be loaded then the method operations continue inoperation 814. If there are previously loaded substrates remaining to be processed, then the method operations continue inoperation 804 as described above. If there are previously loaded substrates remaining to be processed, then the method operations can end. -
FIG. 9A shows multiple processinghead process tools manufacturing system 900, in accordance with embodiments of the present invention. Themanufacturing system 900 includes a front opening unified pod (FOUP)transport system 938 for handling and transportingFOUPs 930A-930J. The load/unloadports head process tools - The
controller 612 includes control subsystems for controlling theplasma signal 922, for controlling theactuator position 923, for detecting the end points of thevarious processing 924, pressures andvacuum 925, process source controls 926 and theprocess recipe 614. Each of the control subsystems are linked to the respective hardware portions necessary for executing the control. By way of example, theposition controller 923 is linked to the actuators and other movable portions of the multiple processinghead process tools controller 612 also includes some suitable type ofnetwork interface 927 that provides a wired orwireless link 928 to afacility network 929. -
FIG. 9B shows multiple processinghead process tools manufacturing facility 950, in accordance with embodiments of the present invention. The multiple processinghead process tools other process tools 952 are coupled by anetwork 927 to thefacility control center 929. Thefacility control center 929 includes acentral controller 940 to provide a centralized access to thecontrollers 612 of each of the multiple processinghead process tools -
FIG. 10 is a block diagram of anexemplary computer system 1000 for carrying out the processing, in accordance with embodiments of the present invention (e.g., thecontroller 612 and or thefacility controller 940, described above). Thecomputer system 1000 includes adigital computer 1002, a display screen (or monitor) 1004, aprinter 1006, afloppy disk drive 1008, ahard disk drive 1010, anetwork interface 1012, and akeyboard 1014. Thecomputer 1002 includes amicroprocessor 1016, amemory bus 1018, random access memory (RAM) 1020, read only memory (ROM) 1022, aperipheral bus 1024, and a keyboard controller (KBC) 1026. Thecomputer 1002 can be a personal computer (such as an IBM compatible personal computer, a Macintosh computer or Macintosh compatible computer), a workstation computer (such as a Sun Microsystems or Hewlett-Packard workstation), or some other type of computer. - The
microprocessor 1016 is a general purpose digital processor, which controls the operation of thecomputer system 1000. Themicroprocessor 1016 can be a single-chip processor or can be implemented with multiple components. Using instructions retrieved from memory, themicroprocessor 1016 controls the reception and manipulation of input data and the output and display of data on output devices. - The
memory bus 1018 is used by themicroprocessor 1016 to access theRAM 1020 and theROM 1022. TheRAM 1020 is used by themicroprocessor 1016 as a general storage area and as scratch-pad memory, and can also be used to store input data and processed data. TheROM 1022 can be used to store instructions or program code followed by themicroprocessor 1016 as well as other data. - The
peripheral bus 1024 is used to access the input, output, and storage devices used by thedigital computer 1002. In the described embodiment, these devices include thedisplay screen 1004, theprinter device 1006, thefloppy disk drive 1008, thehard disk drive 1010, and thenetwork interface 1012. Thekeyboard controller 1026 is used to receive input fromkeyboard 1014 and send decoded symbols for each pressed key tomicroprocessor 1016 overbus 1028. - The
display screen 1004 is an output device that displays images of data provided by themicroprocessor 1016 via theperipheral bus 1024 or provided by other components in thecomputer system 1000. Theprinter device 1006, when operating as a printer, provides an image on a sheet of paper or a similar surface. Other output devices such as a plotter, typesetter, etc. can be used in place of, or in addition to, theprinter device 1006. - The
floppy disk drive 1008 and thehard disk drive 1010 can be used to store various types of data. Thefloppy disk drive 1008 facilitates transporting such data to other computer systems, andhard disk drive 1010 permits fast access to large amounts of stored data. - The
microprocessor 1016 together with an operating system operate to execute computer code and produce and use data. The computer code and data may reside on theRAM 1020, theROM 1022, or thehard disk drive 1010. The computer code and data could also reside on a removable program medium and loaded or installed onto thecomputer system 1000 when needed. Removable program media include, for example, CD-ROM, PC-CARD, floppy disk, flash memory, optical media and magnetic tape. - The
network interface 1012 is used to send and receive data over a network connected to other computer systems. An interface card or similar device and appropriate software implemented by themicroprocessor 1016 can be used to connect thecomputer system 1000 to an existing network and transfer data according to standard protocols. - The
keyboard 1014 is used by a user to input commands and other instructions to thecomputer system 1000. Other types of user input devices can also be used in conjunction with the present invention. For example, pointing devices such as a computer mouse, a track ball, a stylus, or a tablet can be used to manipulate a pointer on a screen of a general-purpose computer. - With the above embodiments in mind, it should be understood that the invention may employ various computer-implemented operations involving data stored in computer systems. These operations are those requiring physical manipulation of physical quantities. Usually, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and otherwise manipulated. Further, the manipulations performed are often referred to in terms, such as producing, identifying, determining, or comparing.
- Any of the operations described herein that form part of the invention are useful machine operations. The invention also relates to a device or an apparatus for performing these operations. The apparatus may be specially constructed for the required purposes, or it may be a general purpose computer selectively activated or configured by a computer program stored in the computer. In particular, various general purpose machines may be used with computer programs written in accordance with the teachings herein, or it may be more convenient to construct a more specialized apparatus to perform the required operations. An exemplary structure for the invention is described below.
- The embodiments of the present invention can also be defined as a machine that transforms data from one state to another state. The transformed data can be saved to storage and then manipulated by a processor. The processor thus transforms the data from one thing to another. Still further, the methods can be processed by one or more machines or processors that can be connected over a network. Each machine can transform data from one state or thing to another, and can also process data, save data to storage, transmit data over a network, display the result, or communicate the result to another machine.
- The invention can also be embodied as computer readable code and/or logic on a computer readable medium. The computer readable medium is any data storage device that can store data which can thereafter be read by a computer system. Examples of the computer readable medium include hard drives, network attached storage (NAS), logic circuits, read-only memory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical and non-optical data storage devices. The computer readable medium can also be distributed over a network coupled computer systems so that the computer readable code is stored and executed in a distributed fashion.
- It will be further appreciated that the instructions represented by the operations in the above figures are not required to be performed in the order illustrated, and that all the processing represented by the operations may not be necessary to practice the invention. Further, the processes described in any of the figures can also be implemented in software stored in any one of or combinations of the RAM, the ROM, or the hard disk drive.
-
FIG. 11A shows a schematic diagram of aprocessing head 1100, in accordance with embodiments of the presenting invention. Theprocessing head 1100 includes asingle microchamber 202A shown in four positions 1102A.1-1102A.4 relative to thesubstrate 102A. Thechuck 201A is supporting thesubstrate 102A. The biasingsource 232B provides a bias power at the desired frequency (bias signal 1104) to thechuck 201A. Thebias signal 1104 is applied to thesubstrate 102A though contact between the substrate and surface of thechuck 201A. Themicrochamber 202A emits the electromagnetic energy 1103A from theplasma 244 from theopen side 1101 of the microchamber (e.g., toward thesubstrate 102A and/or toward the edge ring 208). - In position 1102A1, the electromagnetic energy 1103A is directed somewhat toward the
edge ring 208 however, as the current path leads through thesubstrate 102A to thechuck 201A, then at least some of the current is pulled toward the edge of thesubstrate 102A. This current also pulls the ions toward the edge of thesubstrate 102A. As a result the edge and the region adjacent to the edge of the substrate can gain additional processing time and residence time as compared to other portions of thesubstrate 102A. - As the
microchamber 202A is moved from position 1102A.1 to position 1102A.2, the current path 1103A.2 leads substantially straight through thesubstrate 102A to thechuck 201A. Similarly, as themicrochamber 202A is moved from position 1102A.2 to position 1102A.3, the current path 1103A.3 leads substantially straight through thesubstrate 102A to thechuck 201A. - As the
microchamber 202A is moved from position 1102A.3 to position 1102A.4, the current path 1103A.4 leads substantially straight through thesubstrate 102A to thechuck 201A but possibly not as uniformly toward theedge ring 208. This current can also pull some of the ions toward the edge of thesubstrate 102A. As a result the edge and the region adjacent to the edge of the substrate can gain additional processing time and residence time as compared to other portions of thesubstrate 102A -
FIG. 11B shows a schematic diagram of aprocessing head 1110, in accordance with embodiments of the presenting invention. Theprocessing head 1110 includes andynamic chuck 1108. Thedynamic chuck 1108 provides the support and the biasing to the opposite side of thesubstrate 102A and to theedge ring 208. A relatively thin layer ofsupport material 1106 is provided between thechuck 201A and thesubstrate 102A. A relatively thin layer ofsupport material 1106A is provided and between thechuck 201A and theedge ring 208. Thesupport material support material - The
chuck 1108 reduces the concentrating of the ions at the edges of thesubstrate 102A as described above. Thedynamic chuck 1108 can further reduce concentration of the ions at the edges of thesubstrate 102A and also gain electrical efficiencies. As themicrochamber 202A only needs the corresponding portion of theedge ring 208 and/or thesubstrate 102A to be biased. -
FIG. 11C is a flowchart diagram that illustrates themethod operations 1150 performed in forming a plasma in themicrochamber 202A and moving the microchamber and biasing corresponding portions of thedynamic chuck 1108, in accordance with one embodiment of the present invention. The operations illustrated herein are by way of example, as it should be understood that some operations may have sub-operations and in other instances, certain operations described herein may not be included in the illustrated operations. With this in mind, the method andoperations 1150 will now be described. In an operation 1152 a plasma is formed in themicrochamber 202A in position 1102A.1. In anoperation 1154, thedynamic chuck 1108 need only bias corresponding portion 1104A.1 of the dynamic chuck so that the corresponding portion 1109A.1 of theedge ring 208 is biased. As a result the current path and ion path is substantially restricted to only the corresponding portion 1109A.1 of theedge ring 208 between themicrochamber 202A and the corresponding portion 1104A.1 of thedynamic chuck 1108. - In an
operation 1156, the microchamber is moved to a subsequent position 1102A.2. In anoperation 1158, thedynamic chuck 1108 need only bias corresponding portion 1104A.2 of the dynamic chuck so that the corresponding portion 1109A.2 of thesubstrate 102A is biased. As a result the current path and ion path is substantially restricted to only the corresponding portion 1109A.2 of thesubstrate 102A between themicrochamber 202A and the corresponding portion 1104A.2 of thedynamic chuck 1108. - The method operations continue in
operations edge ring 208 and the method operations can end. For example, as the microchamber is moved to position 1102A.3, thedynamic chuck 1108 need only bias corresponding portion 1104A.3 of the dynamic chuck so that the corresponding portion 1109A.3 of thesubstrate 102A is biased. As a result the current path and ion path is substantially restricted to only the corresponding portion 1109A.3 of thesubstrate 102A between themicrochamber 202A and the corresponding portion 1104A.3 of thedynamic chuck 1108. - As the microchamber is moved to position 1102A.4, the
dynamic chuck 1108 need only bias corresponding portion 1104A.4 of the dynamic chuck so that the corresponding portion 1109A.4 of thesubstrate 102A and theedge ring 208 is biased. As a result the current path and ion path is substantially restricted to only the corresponding portion 1109A.4 of thesubstrate 102A between themicrochamber 202A and the corresponding portion 1104A.4 of thedynamic chuck 1108. - Biasing only the corresponding portions of the
dynamic chuck 1106 reduces the energy requirements of biasing and also provides a more controlled flow of the ions from the plasma to the substrate. Thedynamic chuck 1106 can include a many electrically separate portions that can be selectively biased so that only those areas of thesubstrate 102A that require biasing at any given time can be selectively biased. The many electrically separate portions that can be selectively biased via a matrix similar to a well known memory matrix type systems. Other systems such as addressable electrically separate portions of thedynamic chuck 1106 can be implemented. -
FIG. 11D shows a schematic diagram of aprocessing head 1120, in accordance with embodiments of the presenting invention. Thedynamic chuck 1108 includes a movable portion 1124 of the dynamic chuck that can be moved corresponding locations (e.g., 1104A.1-1104A.4, etc.) to the location (e.g., locations 1102A.1-1102A.4, etc.) of themicrochamber 202A. Anactuator 1122 is coupled to the movable portion 1124 bylink 1121. Theactuator 1122 moves the movable portion 1124 as needed. The movable portion 1124 of the dynamic chuck can be the only portion of the dynamic chuck that is biased and thus the biased movable portion can be moved to correspond to microchamber location and the remaining portion of thesubstrate support 1106 andedge ring support 1106A are not biased unless aligned with themicrochamber 202A. - While the
processing head microchamber 202A, it should be understood that theprocessing head dynamic chuck 1108 can have multiple movable orations 1104A and/or the multiple portions that can be selectively biased that can be substantially aligned and correspond with each one of themultiple microchamber 202A in theprocessing head -
FIGS. 12A-12C are plasma microchambers 1200, 1210, 1220, in accordance with embodiments of the present invention.FIG. 12D is a top view of a linearmultiple microchamber system 1240, in accordance with embodiments of the present invention.FIG. 12E is a side view of a linearmultiple microchamber system 1250, in accordance with embodiments of the present invention.FIG. 12F is a top view of asystem 1260 including two, linearmultiple microchamber systems cleaning line 1266, in accordance with embodiments of the present invention.FIG. 12G is a top view of asystem 1270 with two multiple fan-like shape microchambers, in accordance with embodiments of the present invention.FIG. 12H is agraph 1280 of various plasma sources, in accordance with embodiments of the present invention.FIG. 12I is agraph 1290 of plasma densities of various types of plasma, in accordance with embodiments of the present invention. - Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims.
Claims (45)
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---|---|---|---|---|
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US11682544B2 (en) * | 2020-10-21 | 2023-06-20 | Applied Materials, Inc. | Cover wafer for semiconductor processing chamber |
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Citations (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4276557A (en) * | 1978-12-29 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor circuit structure and method for making it |
US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
US5108778A (en) * | 1987-06-05 | 1992-04-28 | Hitachi, Ltd. | Surface treatment method |
US5183990A (en) * | 1991-04-12 | 1993-02-02 | The Lincoln Electric Company | Method and circuit for protecting plasma nozzle |
US5302237A (en) * | 1992-02-13 | 1994-04-12 | The United States Of America As Represented By The Secretary Of Commerce | Localized plasma processing |
US5349271A (en) * | 1993-03-24 | 1994-09-20 | Diablo Research Corporation | Electrodeless discharge lamp with spiral induction coil |
US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
US5620524A (en) * | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
US5630880A (en) * | 1996-03-07 | 1997-05-20 | Eastlund; Bernard J. | Method and apparatus for a large volume plasma processor that can utilize any feedstock material |
US5651867A (en) * | 1989-10-02 | 1997-07-29 | Hitachi, Ltd. | Plasma processing method and apparatus |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US5998933A (en) * | 1998-04-06 | 1999-12-07 | Shun'ko; Evgeny V. | RF plasma inductor with closed ferrite core |
US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6190236B1 (en) * | 1996-10-16 | 2001-02-20 | Vlsi Technology, Inc. | Method and system for vacuum removal of chemical mechanical polishing by-products |
US20010000104A1 (en) * | 1998-12-28 | 2001-04-05 | Lumin Li | Perforated plasma confinement ring in plasma reactors |
US20010002582A1 (en) * | 1999-07-08 | 2001-06-07 | Dunham Scott William | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US20010023741A1 (en) * | 1998-03-31 | 2001-09-27 | Collison Wenli Z. | Inductively coupled plasma downstream strip module |
US20010047760A1 (en) * | 1996-07-10 | 2001-12-06 | Moslehi Mehrdad M. | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
US20010051439A1 (en) * | 1999-09-24 | 2001-12-13 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
US6335293B1 (en) * | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US6337460B2 (en) * | 2000-02-08 | 2002-01-08 | Thermal Dynamics Corporation | Plasma arc torch and method for cutting a workpiece |
US20020030167A1 (en) * | 1998-08-03 | 2002-03-14 | Liebert Reuel B. | Dose monitor for plasma doping system |
US6388226B1 (en) * | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
US20020101167A1 (en) * | 2000-12-22 | 2002-08-01 | Applied Materials, Inc. | Capacitively coupled reactive ion etch plasma reactor with overhead high density plasma source for chamber dry cleaning |
US20020104821A1 (en) * | 1996-10-04 | 2002-08-08 | Michael Bazylenko | Reactive ion etching of silica structures |
US6432260B1 (en) * | 1999-08-06 | 2002-08-13 | Advanced Energy Industries, Inc. | Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof |
US6444137B1 (en) * | 1990-07-31 | 2002-09-03 | Applied Materials, Inc. | Method for processing substrates using gaseous silicon scavenger |
US20020121345A1 (en) * | 2000-08-07 | 2002-09-05 | Nano-Architect Research Corporation | Multi-chamber system for semiconductor process |
US20030015965A1 (en) * | 2002-08-15 | 2003-01-23 | Valery Godyak | Inductively coupled plasma reactor |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
US20030071035A1 (en) * | 2001-10-16 | 2003-04-17 | Brailove Adam Alexander | Induction plasma reactor |
US20030106647A1 (en) * | 2000-07-17 | 2003-06-12 | Akira Koshiishi | Apparatus for holding an object to be processed |
US20030188685A1 (en) * | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
US6641698B2 (en) * | 2000-12-22 | 2003-11-04 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
US20030213560A1 (en) * | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
US20040018320A1 (en) * | 2002-07-25 | 2004-01-29 | Guenther Nicolussi | Method of manufacturing a device |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
US20040047720A1 (en) * | 2002-07-31 | 2004-03-11 | Alexander Lerner | Substrate centering apparatus and method |
US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
US6761804B2 (en) * | 2002-02-11 | 2004-07-13 | Applied Materials, Inc. | Inverted magnetron |
US20040175953A1 (en) * | 2003-03-07 | 2004-09-09 | Ogle John S. | Apparatus for generating planar plasma using concentric coils and ferromagnetic cores |
US20040231799A1 (en) * | 2001-08-06 | 2004-11-25 | Lee Chun Soo | Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof |
US6825618B2 (en) * | 1998-03-14 | 2004-11-30 | Bryan Y. Pu | Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply |
US20040238123A1 (en) * | 2003-05-22 | 2004-12-02 | Axcelis Technologies, Inc. | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
US20040238124A1 (en) * | 2003-03-26 | 2004-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
US6830652B1 (en) * | 1999-05-26 | 2004-12-14 | Tokyo Electron Limited | Microwave plasma processing apparatus |
US6836073B2 (en) * | 2002-06-10 | 2004-12-28 | Tokyo Ohka Kogyo Co., Ltd. | Simultaneous discharge apparatus |
US20050000655A1 (en) * | 2003-05-07 | 2005-01-06 | Soon-Im Wi | Inductive plasma chamber having multi discharge tube bridge |
US20050001556A1 (en) * | 2002-07-09 | 2005-01-06 | Applied Materials, Inc. | Capacitively coupled plasma reactor with magnetic plasma control |
US6851384B2 (en) * | 2000-06-29 | 2005-02-08 | Nec Corporation | Remote plasma apparatus for processing substrate with two types of gases |
US6872259B2 (en) * | 2000-03-30 | 2005-03-29 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US20050160985A1 (en) * | 2004-01-28 | 2005-07-28 | Tokyo Electron Limited | Compact, distributed inductive element for large scale inductively-coupled plasma sources |
US6924455B1 (en) * | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
US20050184670A1 (en) * | 2002-03-28 | 2005-08-25 | Ana Lacoste | Device for confinement of a plasma within a volume |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
US20050194100A1 (en) * | 2002-09-10 | 2005-09-08 | Applied Materials, Inc. | Reduced friction lift pin |
US6962644B2 (en) * | 2002-03-18 | 2005-11-08 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
US20050279458A1 (en) * | 2002-02-15 | 2005-12-22 | Tomohiro Okumura | Plasma processing method and apparatus |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US20060065623A1 (en) * | 2004-09-27 | 2006-03-30 | Guiney Timothy J | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
US7069937B2 (en) * | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
US20060289409A1 (en) * | 2005-05-23 | 2006-12-28 | Dae-Kyu Choi | Plasma source with discharge inducing bridge and plasma processing system using the same |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US20070081295A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US7217337B2 (en) * | 2002-11-14 | 2007-05-15 | Dae-Kyu Choi | Plasma process chamber and system |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US20070163440A1 (en) * | 2006-01-19 | 2007-07-19 | Atto Co., Ltd. | Gas separation type showerhead |
US20070212484A1 (en) * | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070251642A1 (en) * | 2006-04-28 | 2007-11-01 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
US20070277930A1 (en) * | 2004-09-17 | 2007-12-06 | Toshi Yokoyama | Substrate Cleaning Apparatus and Substrate Processing Unit |
US20070289710A1 (en) * | 2006-06-20 | 2007-12-20 | Eric Hudson | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US20080020574A1 (en) * | 2006-07-18 | 2008-01-24 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
US20080041820A1 (en) * | 2002-09-20 | 2008-02-21 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US20080099145A1 (en) * | 2005-09-02 | 2008-05-01 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
US20080110860A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Method of plasma confinement for enhancing magnetic control of plasma radial distribution |
US20080173237A1 (en) * | 2007-01-19 | 2008-07-24 | Collins Kenneth S | Plasma Immersion Chamber |
US20080179546A1 (en) * | 2007-01-30 | 2008-07-31 | Samsung Electronics Co., Ltd. | Ion beam apparatus having plasma sheath controller |
US20080179007A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US20080286697A1 (en) * | 2001-08-31 | 2008-11-20 | Steven Verhaverbeke | Method and apparatus for processing a wafer |
US20080286489A1 (en) * | 2007-05-18 | 2008-11-20 | Lam Research Corporation | Variable Volume Plasma Processing Chamber and Associated Methods |
US20080302652A1 (en) * | 2007-06-06 | 2008-12-11 | Mks Instruments, Inc. | Particle Reduction Through Gas and Plasma Source Control |
US20090015165A1 (en) * | 2007-07-10 | 2009-01-15 | Samsung Eletronics Co., Ltd. | Plasma generating apparatus |
US20090025879A1 (en) * | 2007-07-26 | 2009-01-29 | Shahid Rauf | Plasma reactor with reduced electrical skew using a conductive baffle |
US20090066315A1 (en) * | 2005-10-21 | 2009-03-12 | The University Of Akron | Dynamic modulation for multiplexation of microfluidic and nanofluidic based biosensors |
US7513262B2 (en) * | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
US20090200268A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal |
US20090200269A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Protective coating for a plasma processing chamber part and a method of use |
US20090250443A1 (en) * | 2008-04-03 | 2009-10-08 | Tes Co., Ltd. | Plasma processing apparatus |
US7645495B2 (en) * | 2002-12-12 | 2010-01-12 | Otb Solar B.V. | Method and apparatus for treating a substrate |
US20110209663A1 (en) * | 2007-09-06 | 2011-09-01 | Intermolecular, Inc. | Multi-Region Processing System and Heads |
US20120142197A1 (en) * | 2007-09-05 | 2012-06-07 | Intermolecular, Inc. | Combinatorial process system |
US20130093443A1 (en) * | 2007-09-04 | 2013-04-18 | Lam Research Corporation | Method and apparatus for diagnosing status of parts in real time in plasma processing equipment |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61189642A (en) | 1985-02-18 | 1986-08-23 | Mitsubishi Electric Corp | Plasma reactor |
EP0246453A3 (en) | 1986-04-18 | 1989-09-06 | General Signal Corporation | Novel multiple-processing and contamination-free plasma etching system |
RU2094961C1 (en) | 1989-07-20 | 1997-10-27 | Уланов Игорь Максимович | Transformer-type plasmatron |
RU2022917C1 (en) | 1989-09-27 | 1994-11-15 | Уланов Игорь Максимович | Process of preparing nitrogen oxide |
RU2056702C1 (en) | 1990-07-09 | 1996-03-20 | Уланов Игорь Максимович | Transformer-type plasmatron |
JPH0644481A (en) | 1991-02-13 | 1994-02-18 | Teruo Sato | Aggregate alarm display device with exchange function |
US5236512A (en) * | 1991-08-14 | 1993-08-17 | Thiokol Corporation | Method and apparatus for cleaning surfaces with plasma |
US5353314A (en) | 1991-09-30 | 1994-10-04 | The United States Of America As Represented By The United States Department Of Energy | Electric field divertor plasma pump |
JPH05144594A (en) | 1991-11-19 | 1993-06-11 | Ebara Corp | Discharge plasma generator |
JPH05166595A (en) | 1991-12-12 | 1993-07-02 | Fuji Denpa Koki Kk | Method for generating plasma of high atmospheric pressure and high density |
JP2950110B2 (en) | 1993-09-24 | 1999-09-20 | 住友金属工業株式会社 | Plasma etching method |
US6200389B1 (en) * | 1994-07-18 | 2001-03-13 | Silicon Valley Group Thermal Systems Llc | Single body injector and deposition chamber |
US5679167A (en) * | 1994-08-18 | 1997-10-21 | Sulzer Metco Ag | Plasma gun apparatus for forming dense, uniform coatings on large substrates |
JPH0878192A (en) | 1994-09-06 | 1996-03-22 | Fujitsu Ltd | Plasma treatment device and plasma treatment method |
US5811021A (en) * | 1995-02-28 | 1998-09-22 | Hughes Electronics Corporation | Plasma assisted chemical transport method and apparatus |
US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
JPH0950992A (en) * | 1995-08-04 | 1997-02-18 | Sharp Corp | Film forming device |
JP3489351B2 (en) * | 1996-09-17 | 2004-01-19 | セイコーエプソン株式会社 | Surface treatment apparatus and surface treatment method |
US6267074B1 (en) | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
JPH11135297A (en) | 1997-10-31 | 1999-05-21 | Kumagai Hiromi | Plasma generator |
JPH11150104A (en) * | 1997-11-19 | 1999-06-02 | Niigata Eng Co Ltd | Device for planarization of semiconductor substrate surface |
US6429400B1 (en) * | 1997-12-03 | 2002-08-06 | Matsushita Electric Works Ltd. | Plasma processing apparatus and method |
US6905578B1 (en) * | 1998-04-27 | 2005-06-14 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure |
JP3349953B2 (en) * | 1998-05-25 | 2002-11-25 | シャープ株式会社 | Substrate processing equipment |
EP0989595A3 (en) * | 1998-09-18 | 2001-09-19 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Device for processing a surface of a substrate |
US6579805B1 (en) | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
US6478875B1 (en) * | 1999-03-03 | 2002-11-12 | The Research Foundation Of State University Of New York | Method and apparatus for determining process-induced stresses and elastic modulus of coatings by in-situ measurement |
JP2003530481A (en) | 1999-11-19 | 2003-10-14 | ナノ スケール サーフェイス システムズ インコーポレイテッド | Systems and methods for depositing inorganic / organic dielectric films |
US6547458B1 (en) * | 1999-11-24 | 2003-04-15 | Axcelis Technologies, Inc. | Optimized optical system design for endpoint detection |
DE10060002B4 (en) | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Device for surface treatment |
JP4212210B2 (en) | 1999-12-07 | 2009-01-21 | 株式会社小松製作所 | Surface treatment equipment |
JP2001237226A (en) | 2000-02-23 | 2001-08-31 | Kobe Steel Ltd | Plasma treatment equipment |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US20020153103A1 (en) * | 2001-04-20 | 2002-10-24 | Applied Process Technologies, Inc. | Plasma treatment apparatus |
TWI234417B (en) | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
JP4039834B2 (en) | 2001-09-28 | 2008-01-30 | 株式会社荏原製作所 | Etching method and etching apparatus |
US6660177B2 (en) * | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
SG120087A1 (en) * | 2002-02-01 | 2006-03-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
US7465362B2 (en) * | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US6837967B1 (en) | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
JP4087234B2 (en) | 2002-12-05 | 2008-05-21 | 株式会社アルバック | Plasma processing apparatus and plasma processing method |
JP3827638B2 (en) * | 2002-12-26 | 2006-09-27 | 株式会社タムラ製作所 | Vacuum processing apparatus and vacuum processing method |
JP2004296729A (en) | 2003-03-26 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
WO2004107825A1 (en) | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Plasma source and plasma processing apparatus |
JP2005032805A (en) * | 2003-07-08 | 2005-02-03 | Future Vision:Kk | Microwave plasma processing method, microwave plasma processing equipment, and its plasma head |
JP4607517B2 (en) | 2003-09-03 | 2011-01-05 | 東京エレクトロン株式会社 | Plasma processing equipment |
US7282244B2 (en) * | 2003-09-05 | 2007-10-16 | General Electric Company | Replaceable plate expanded thermal plasma apparatus and method |
JP2005108932A (en) * | 2003-09-29 | 2005-04-21 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus |
US20050103265A1 (en) | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
KR101025323B1 (en) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | Etching apparatus and etching method |
JP4342984B2 (en) | 2004-03-10 | 2009-10-14 | Okiセミコンダクタ株式会社 | Etching method |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
JP2006024442A (en) * | 2004-07-08 | 2006-01-26 | Sharp Corp | Apparatus and method for atmospheric-pressure plasma treatment |
ATE532203T1 (en) * | 2004-08-27 | 2011-11-15 | Fei Co | LOCALIZED PLASMA TREATMENT |
KR20060077363A (en) * | 2004-12-30 | 2006-07-05 | 엘지.필립스 엘시디 주식회사 | Atmospheric thin film treatment apparatus and thin film treatment method for flat panel display device |
JP5034245B2 (en) * | 2005-02-10 | 2012-09-26 | コニカミノルタホールディングス株式会社 | Plasma discharge treatment apparatus and plasma discharge treatment method |
US7262555B2 (en) * | 2005-03-17 | 2007-08-28 | Micron Technology, Inc. | Method and system for discretely controllable plasma processing |
DE112006002412T5 (en) | 2005-09-09 | 2008-07-17 | ULVAC, Inc., Chigasaki | Ion source and plasma processing device |
US7895970B2 (en) | 2005-09-29 | 2011-03-01 | Tokyo Electron Limited | Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component |
KR100663668B1 (en) | 2005-12-07 | 2007-01-09 | 주식회사 뉴파워 프라즈마 | Plasma processing apparatus for a parallel bach processing of a plurality of substrates |
KR100785164B1 (en) | 2006-02-04 | 2007-12-11 | 위순임 | Multi output remote plasma generator and substrate processing system having the same |
JP4410771B2 (en) * | 2006-04-28 | 2010-02-03 | パナソニック株式会社 | Bevel etching apparatus and bevel etching method |
TW200816880A (en) * | 2006-05-30 | 2008-04-01 | Matsushita Electric Ind Co Ltd | Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods |
US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
JP5069427B2 (en) | 2006-06-13 | 2012-11-07 | 北陸成型工業株式会社 | Shower plate, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the same |
DE102006048816A1 (en) | 2006-10-16 | 2008-04-17 | Iplas Innovative Plasma Systems Gmbh | Apparatus and method for local generation of microwave plasmas |
KR100842745B1 (en) * | 2006-11-30 | 2008-07-01 | 주식회사 하이닉스반도체 | Apparatus and methods of plasma processing by using scan injectors |
US7897213B2 (en) | 2007-02-08 | 2011-03-01 | Lam Research Corporation | Methods for contained chemical surface treatment |
JP2008205209A (en) * | 2007-02-20 | 2008-09-04 | Matsushita Electric Works Ltd | Plasma processor |
US20080219811A1 (en) * | 2007-03-05 | 2008-09-11 | Van Der Meulen Peter | Semiconductor manufacturing process modules |
US20090197015A1 (en) | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US8333839B2 (en) * | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US8129288B2 (en) | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
US8409459B2 (en) | 2008-02-28 | 2013-04-02 | Tokyo Electron Limited | Hollow cathode device and method for using the device to control the uniformity of a plasma process |
US20090229972A1 (en) * | 2008-03-13 | 2009-09-17 | Sankaran R Mohan | Method and apparatus for producing a feature having a surface roughness in a substrate |
US7713757B2 (en) | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
US7558045B1 (en) | 2008-03-20 | 2009-07-07 | Novellus Systems, Inc. | Electrostatic chuck assembly with capacitive sense feature, and related operating method |
JP5294669B2 (en) | 2008-03-25 | 2013-09-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5232512B2 (en) * | 2008-03-26 | 2013-07-10 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
US20090275206A1 (en) | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
JP5524453B2 (en) | 2008-05-15 | 2014-06-18 | Sumco Techxiv株式会社 | Silicon wafer etching method and etching apparatus |
JP2009295800A (en) * | 2008-06-05 | 2009-12-17 | Komatsu Ltd | Cleaning method and apparatus of light collecting mirror in euv light generating apparatus |
US8679288B2 (en) | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
US8206552B2 (en) | 2008-06-25 | 2012-06-26 | Applied Materials, Inc. | RF power delivery system in a semiconductor apparatus |
JP5144594B2 (en) | 2008-06-30 | 2013-02-13 | ヤフー株式会社 | Server apparatus, prediction method and program in server apparatus |
KR101046335B1 (en) | 2008-07-29 | 2011-07-05 | 피에스케이 주식회사 | Hollow cathode plasma generation method and large area substrate processing method using hollow cathode plasma |
CN102099505A (en) | 2008-07-30 | 2011-06-15 | 京瓷株式会社 | Deposition film forming apparatus and deposition film forming method |
US20100024729A1 (en) | 2008-08-04 | 2010-02-04 | Xinmin Cao | Methods and apparatuses for uniform plasma generation and uniform thin film deposition |
KR20100031960A (en) | 2008-09-17 | 2010-03-25 | 삼성전자주식회사 | Plasma generating apparatus |
JP5295833B2 (en) | 2008-09-24 | 2013-09-18 | 株式会社東芝 | Substrate processing apparatus and substrate processing method |
US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
US8099995B2 (en) | 2008-12-16 | 2012-01-24 | Agilent Technologies, Inc. | Choked flow isolator for noise reduction in analytical systems |
US7994724B2 (en) | 2009-03-27 | 2011-08-09 | Ecole Polytechnique | Inductive plasma applicator |
US8503151B2 (en) | 2009-09-30 | 2013-08-06 | Lam Research Corporation | Plasma arrestor insert |
US8758512B2 (en) * | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
JP5642181B2 (en) | 2009-08-21 | 2014-12-17 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | Substrate processing apparatus and substrate processing method |
SG10201405040PA (en) | 2009-08-31 | 2014-10-30 | Lam Res Corp | A local plasma confinement and pressure control arrangement and methods thereof |
JP4855506B2 (en) | 2009-09-15 | 2012-01-18 | 住友精密工業株式会社 | Plasma etching equipment |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
EP2739719A2 (en) * | 2011-08-02 | 2014-06-11 | Tokyo Electron Limited | System and method for tissue construction using an electric field applicator |
JP5166595B2 (en) | 2011-12-16 | 2013-03-21 | 株式会社藤商事 | Game machine |
US9373551B2 (en) * | 2013-03-12 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Moveable and adjustable gas injectors for an etching chamber |
-
2010
- 2010-12-01 US US12/957,923 patent/US9111729B2/en active Active
- 2010-12-02 SG SG10201407638RA patent/SG10201407638RA/en unknown
- 2010-12-02 KR KR1020127014385A patent/KR101800037B1/en active IP Right Grant
- 2010-12-02 JP JP2012542199A patent/JP5826761B2/en active Active
- 2010-12-02 WO PCT/US2010/058791 patent/WO2011069011A1/en active Application Filing
- 2010-12-02 CN CN201080054616.7A patent/CN102753723B/en active Active
- 2010-12-03 TW TW099142135A patent/TWI443740B/en active
-
2014
- 2014-02-10 US US14/176,493 patent/US9911578B2/en active Active
-
2018
- 2018-01-22 US US15/877,092 patent/US10332727B2/en active Active
Patent Citations (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276557A (en) * | 1978-12-29 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor circuit structure and method for making it |
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
US5108778A (en) * | 1987-06-05 | 1992-04-28 | Hitachi, Ltd. | Surface treatment method |
US5651867A (en) * | 1989-10-02 | 1997-07-29 | Hitachi, Ltd. | Plasma processing method and apparatus |
US6444137B1 (en) * | 1990-07-31 | 2002-09-03 | Applied Materials, Inc. | Method for processing substrates using gaseous silicon scavenger |
US5183990A (en) * | 1991-04-12 | 1993-02-02 | The Lincoln Electric Company | Method and circuit for protecting plasma nozzle |
US5302237A (en) * | 1992-02-13 | 1994-04-12 | The United States Of America As Represented By The Secretary Of Commerce | Localized plasma processing |
US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
US5349271A (en) * | 1993-03-24 | 1994-09-20 | Diablo Research Corporation | Electrodeless discharge lamp with spiral induction coil |
US5620524A (en) * | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
US5630880A (en) * | 1996-03-07 | 1997-05-20 | Eastlund; Bernard J. | Method and apparatus for a large volume plasma processor that can utilize any feedstock material |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US20010047760A1 (en) * | 1996-07-10 | 2001-12-06 | Moslehi Mehrdad M. | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
US20020104821A1 (en) * | 1996-10-04 | 2002-08-08 | Michael Bazylenko | Reactive ion etching of silica structures |
US6190236B1 (en) * | 1996-10-16 | 2001-02-20 | Vlsi Technology, Inc. | Method and system for vacuum removal of chemical mechanical polishing by-products |
US6388226B1 (en) * | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6924455B1 (en) * | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6825618B2 (en) * | 1998-03-14 | 2004-11-30 | Bryan Y. Pu | Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply |
US20010023741A1 (en) * | 1998-03-31 | 2001-09-27 | Collison Wenli Z. | Inductively coupled plasma downstream strip module |
US5998933A (en) * | 1998-04-06 | 1999-12-07 | Shun'ko; Evgeny V. | RF plasma inductor with closed ferrite core |
US6335293B1 (en) * | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US20020030167A1 (en) * | 1998-08-03 | 2002-03-14 | Liebert Reuel B. | Dose monitor for plasma doping system |
US20010000104A1 (en) * | 1998-12-28 | 2001-04-05 | Lumin Li | Perforated plasma confinement ring in plasma reactors |
US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
US6830652B1 (en) * | 1999-05-26 | 2004-12-14 | Tokyo Electron Limited | Microwave plasma processing apparatus |
US20010002582A1 (en) * | 1999-07-08 | 2001-06-07 | Dunham Scott William | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6432260B1 (en) * | 1999-08-06 | 2002-08-13 | Advanced Energy Industries, Inc. | Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof |
US20010051439A1 (en) * | 1999-09-24 | 2001-12-13 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US6337460B2 (en) * | 2000-02-08 | 2002-01-08 | Thermal Dynamics Corporation | Plasma arc torch and method for cutting a workpiece |
US6872259B2 (en) * | 2000-03-30 | 2005-03-29 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
US6851384B2 (en) * | 2000-06-29 | 2005-02-08 | Nec Corporation | Remote plasma apparatus for processing substrate with two types of gases |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US20030106647A1 (en) * | 2000-07-17 | 2003-06-12 | Akira Koshiishi | Apparatus for holding an object to be processed |
US20020121345A1 (en) * | 2000-08-07 | 2002-09-05 | Nano-Architect Research Corporation | Multi-chamber system for semiconductor process |
US6641698B2 (en) * | 2000-12-22 | 2003-11-04 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
US20020101167A1 (en) * | 2000-12-22 | 2002-08-01 | Applied Materials, Inc. | Capacitively coupled reactive ion etch plasma reactor with overhead high density plasma source for chamber dry cleaning |
US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
US7363876B2 (en) * | 2001-04-20 | 2008-04-29 | Applied Materials, Inc. | Multi-core transformer plasma source |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
US20040231799A1 (en) * | 2001-08-06 | 2004-11-25 | Lee Chun Soo | Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof |
US20080286697A1 (en) * | 2001-08-31 | 2008-11-20 | Steven Verhaverbeke | Method and apparatus for processing a wafer |
US6855906B2 (en) * | 2001-10-16 | 2005-02-15 | Adam Alexander Brailove | Induction plasma reactor |
US20030071035A1 (en) * | 2001-10-16 | 2003-04-17 | Brailove Adam Alexander | Induction plasma reactor |
US6761804B2 (en) * | 2002-02-11 | 2004-07-13 | Applied Materials, Inc. | Inverted magnetron |
US20050279458A1 (en) * | 2002-02-15 | 2005-12-22 | Tomohiro Okumura | Plasma processing method and apparatus |
US6962644B2 (en) * | 2002-03-18 | 2005-11-08 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
US20050184670A1 (en) * | 2002-03-28 | 2005-08-25 | Ana Lacoste | Device for confinement of a plasma within a volume |
US20030188685A1 (en) * | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
US20030213560A1 (en) * | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
US6836073B2 (en) * | 2002-06-10 | 2004-12-28 | Tokyo Ohka Kogyo Co., Ltd. | Simultaneous discharge apparatus |
US20050001556A1 (en) * | 2002-07-09 | 2005-01-06 | Applied Materials, Inc. | Capacitively coupled plasma reactor with magnetic plasma control |
US20040018320A1 (en) * | 2002-07-25 | 2004-01-29 | Guenther Nicolussi | Method of manufacturing a device |
US20040047720A1 (en) * | 2002-07-31 | 2004-03-11 | Alexander Lerner | Substrate centering apparatus and method |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
US20030015965A1 (en) * | 2002-08-15 | 2003-01-23 | Valery Godyak | Inductively coupled plasma reactor |
US20050194100A1 (en) * | 2002-09-10 | 2005-09-08 | Applied Materials, Inc. | Reduced friction lift pin |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US20080041820A1 (en) * | 2002-09-20 | 2008-02-21 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7069937B2 (en) * | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US7513262B2 (en) * | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7217337B2 (en) * | 2002-11-14 | 2007-05-15 | Dae-Kyu Choi | Plasma process chamber and system |
US7645495B2 (en) * | 2002-12-12 | 2010-01-12 | Otb Solar B.V. | Method and apparatus for treating a substrate |
US20040175953A1 (en) * | 2003-03-07 | 2004-09-09 | Ogle John S. | Apparatus for generating planar plasma using concentric coils and ferromagnetic cores |
US20040238124A1 (en) * | 2003-03-26 | 2004-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
US20050000655A1 (en) * | 2003-05-07 | 2005-01-06 | Soon-Im Wi | Inductive plasma chamber having multi discharge tube bridge |
US20040238123A1 (en) * | 2003-05-22 | 2004-12-02 | Axcelis Technologies, Inc. | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US20050160985A1 (en) * | 2004-01-28 | 2005-07-28 | Tokyo Electron Limited | Compact, distributed inductive element for large scale inductively-coupled plasma sources |
US20070277930A1 (en) * | 2004-09-17 | 2007-12-06 | Toshi Yokoyama | Substrate Cleaning Apparatus and Substrate Processing Unit |
US20060065623A1 (en) * | 2004-09-27 | 2006-03-30 | Guiney Timothy J | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
US20060289409A1 (en) * | 2005-05-23 | 2006-12-28 | Dae-Kyu Choi | Plasma source with discharge inducing bridge and plasma processing system using the same |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US20080099145A1 (en) * | 2005-09-02 | 2008-05-01 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
US20070081295A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US20090066315A1 (en) * | 2005-10-21 | 2009-03-12 | The University Of Akron | Dynamic modulation for multiplexation of microfluidic and nanofluidic based biosensors |
US20070163440A1 (en) * | 2006-01-19 | 2007-07-19 | Atto Co., Ltd. | Gas separation type showerhead |
US20070212484A1 (en) * | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070251642A1 (en) * | 2006-04-28 | 2007-11-01 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
US20070289710A1 (en) * | 2006-06-20 | 2007-12-20 | Eric Hudson | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US20080020574A1 (en) * | 2006-07-18 | 2008-01-24 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
US20080110860A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Method of plasma confinement for enhancing magnetic control of plasma radial distribution |
US20080173237A1 (en) * | 2007-01-19 | 2008-07-24 | Collins Kenneth S | Plasma Immersion Chamber |
US20080179546A1 (en) * | 2007-01-30 | 2008-07-31 | Samsung Electronics Co., Ltd. | Ion beam apparatus having plasma sheath controller |
US20080179007A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone |
US20080286489A1 (en) * | 2007-05-18 | 2008-11-20 | Lam Research Corporation | Variable Volume Plasma Processing Chamber and Associated Methods |
US20080302652A1 (en) * | 2007-06-06 | 2008-12-11 | Mks Instruments, Inc. | Particle Reduction Through Gas and Plasma Source Control |
US20090015165A1 (en) * | 2007-07-10 | 2009-01-15 | Samsung Eletronics Co., Ltd. | Plasma generating apparatus |
US20090025879A1 (en) * | 2007-07-26 | 2009-01-29 | Shahid Rauf | Plasma reactor with reduced electrical skew using a conductive baffle |
US20130093443A1 (en) * | 2007-09-04 | 2013-04-18 | Lam Research Corporation | Method and apparatus for diagnosing status of parts in real time in plasma processing equipment |
US20120142197A1 (en) * | 2007-09-05 | 2012-06-07 | Intermolecular, Inc. | Combinatorial process system |
US20110209663A1 (en) * | 2007-09-06 | 2011-09-01 | Intermolecular, Inc. | Multi-Region Processing System and Heads |
US20090109595A1 (en) * | 2007-10-31 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for performing electrostatic chuck clamping in track lithography tools |
US20090200268A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal |
US20090200269A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Protective coating for a plasma processing chamber part and a method of use |
US20090250443A1 (en) * | 2008-04-03 | 2009-10-08 | Tes Co., Ltd. | Plasma processing apparatus |
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US20110209663A1 (en) * | 2007-09-06 | 2011-09-01 | Intermolecular, Inc. | Multi-Region Processing System and Heads |
US8770143B2 (en) * | 2007-09-06 | 2014-07-08 | Intermolecular, Inc. | Multi-region processing system |
US20140151333A1 (en) * | 2009-12-03 | 2014-06-05 | Lam Research Corporation | Small Plasma Chamber Systems and Methods |
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US9177762B2 (en) * | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
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Also Published As
Publication number | Publication date |
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KR101800037B1 (en) | 2017-11-21 |
US9111729B2 (en) | 2015-08-18 |
US20180144906A1 (en) | 2018-05-24 |
JP2013514633A (en) | 2013-04-25 |
JP5826761B2 (en) | 2015-12-02 |
CN102753723B (en) | 2015-04-29 |
SG10201407638RA (en) | 2015-01-29 |
TWI443740B (en) | 2014-07-01 |
US9911578B2 (en) | 2018-03-06 |
US20140151333A1 (en) | 2014-06-05 |
TW201126601A (en) | 2011-08-01 |
CN102753723A (en) | 2012-10-24 |
KR20120104222A (en) | 2012-09-20 |
US10332727B2 (en) | 2019-06-25 |
WO2011069011A1 (en) | 2011-06-09 |
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