US20060185577A1 - Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit - Google Patents

Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit Download PDF

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US20060185577A1
US20060185577A1 US10/566,722 US56672204A US2006185577A1 US 20060185577 A1 US20060185577 A1 US 20060185577A1 US 56672204 A US56672204 A US 56672204A US 2006185577 A1 US2006185577 A1 US 2006185577A1
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far ultraviolet
light emitting
ultraviolet light
boron nitride
solid
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Kenji Watanabe
Takashi Taniguchi
Satoshi Koizumi
Hisao Kanda
Masayuki Katagiri
Takatoshi Yamada
Nesladek Milos
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National Institute for Materials Science
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National Institute for Materials Science
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Priority claimed from JP2003388467A external-priority patent/JP4340753B2/ja
Priority claimed from JP2004035501A external-priority patent/JP3903185B2/ja
Priority claimed from JP2004260480A external-priority patent/JP2006079873A/ja
Application filed by National Institute for Materials Science filed Critical National Institute for Materials Science
Assigned to NATIONAL INSTITUTE FOR MATERIALS SCIENCE reassignment NATIONAL INSTITUTE FOR MATERIALS SCIENCE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATAGIRI, MASAYUKI, TANIGUCHI, TAKASHI, WATANABE, KENJI, YAMADA, TAKATOSHI, KOIZUMI, SATOSHI, MILOS, NESLADEK, KANDA, HISAO
Publication of US20060185577A1 publication Critical patent/US20060185577A1/en
Priority to US12/588,462 priority Critical patent/US8258603B2/en
Priority to US13/561,695 priority patent/US8529696B2/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065—Presses for the formation of diamonds or boronitrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/63—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/0645—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/066—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/069—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates to (i) a highly pure hexagonal boron nitride single crystal capable of emitting high-luminance far ultraviolet light with a single emission peak at a wavelength of 235 nm or shorter, particularly at 210 nm to 220 nm and remarkably at 215 nm, a producing method thereof, and a far ultraviolet light emitting element consisting of said single crystal.
  • the present invention also relates to (ii) a solid-state laser using a solid-state light emitting element consisting of said highly pure hexagonal boron nitride single crystal.
  • the present invention relates to (iii) a solid-state far ultraviolet light emitting apparatus which includes said highly pure hexagonal boron nitride crystal as the light emitting layer with an exciting means incorporated thereinto. More particularly, the present invention relates to a solid-state far ultraviolet light emitting apparatus, wherein said exciting means of the light emitting layer is an electron beam. Also further particularly, the present invention relates to a solid-state far ultraviolet light emitting apparatus, wherein said exciting means of the light emitting layer comprises a diamond substrate emitting an electron beam.
  • the solid-state light emitting materials with far ultraviolet light emission characteristics of the order of 200 nm include hexagonal boron nitride crystal (hereinafter, denoted by hBN) having about 5.8 eV band gap and being a direct transition type semiconductor.
  • hBN hexagonal boron nitride crystal
  • hBN has been used for a long time as a chemically stable insulator material, is synthesized by gas phase reaction of boron oxide and ammonia, and is now utilized in many forms (such as powder, sintered body, and film form).
  • hBN obtained by the above described gas phase reaction has contained impurities to make it difficult to obtain hBN having the far ultraviolet light emission characteristics corresponding to its specific band gap.
  • this material In order to use this material as the high-luminance light emitting element in far ultraviolet region, it is necessary first to establish methods to synthesize highly pure single crystals, but there has been no report until now that the highly pure hBN single crystal with expected light emission characteristics has been successfully obtained by a hBN synthesizing method, aiming at its potential ability as a solid-state far ultraviolet light emitting element with the emission wavelength of the order of 200 nm.
  • hBN has been known to be synthesized by the thermal decomposition reaction or by the gas phase reaction between boron compounds such as boron oxide and ammonia, but it has been difficult to obtain highly pure single crystals by these reactions. Especially, they have never been considered established as the manufacturing methods of single crystal materials to use for semiconductors or the like.
  • cubic boron nitride crystal a high-pressure phase of hBN
  • hBN cubic boron nitride crystal
  • boronitride of alkali metal or alkali earth metal as a solvent
  • recrystallizing said raw material in said solvent under high-temperature and high-pressure of 55,000 atmospheric pressure and 1,600° C.
  • Obtained cBN single crystal has high hardness next to the diamond, and is widely used as a super hard material, and this procedure for synthesizing cBN has already been established industrially.
  • cBN synthesized in this way also has a broad band gap (Eg: 6.3 eV), it has been studied for a long time as a solid-state short wavelength light emitting element.
  • Eg: 6.3 eV the broad band gap
  • every cBN single crystal hitherto reported is colored in amber, orange or the like, and the light emitting behavior corresponding to cBN specific band gap has not yet been able to be observed in this situation.
  • large effect of impurities contained in the cBN crystal may be nominated.
  • Non-patent literature 1 H. Akamaru, A. Onodera, T. Endo, O. Mishima, J. Phys. Chem. Solids, 63, 887 (2002).
  • Non-patent literature 2 T. Taniguchi, S. Yamaoka, J. Cryst. Growth, 222, 549 (2001).
  • hBN a wide band gap semiconductor
  • hBN a wide band gap semiconductor
  • the present situation is as described above.
  • the present invention intends to meet these requirements. That is, the problem to be solved by the present invention is to synthesize highly pure hBN single crystals which has been impossible to be produced by the conventional hBN synthetic procedure, and using these, to provide an element capable of far ultraviolet high-luminance light emission reflecting the characteristics specific to hBN. Moreover, making use of said hexagonal boron nitride crystal having specific light emission characteristics, the invention intends to provide simple, compact, low cost, and highly efficient solid-state far ultraviolet lasers and solid-state far ultraviolet region high-luminance light emitting apparatuses, instead of conventional large-scale apparatuses using gases or complicated and expensive semiconductor apparatuses. That is to say, the invention intends to provide solid-state light emitting apparatuses utilizing the far ultraviolet solid-state light emitting elements adopting highly pure hexagonal boron nitride crystals having far ultraviolet light emission characteristics as active mediums.
  • the inventors of the present invention studied on the synthesis experiments reported in the above non-patent reference 2, for obtaining highly pure cBN single crystals starting from the raw hBN material using a clean and dry nitrogen atmosphere and purified solvents. They have tried experiments to survey in detail and to control the critical conditions to synthesize highly pure cBN single crystals, and have found that highly pure hBN single crystals can be obtained by appropriately adjusting conditions of the temperature and the pressure.
  • the present invention succeeded in the synthesis of highly pure hBN single crystals having a single light emission peak in the far ultraviolet region near a wavelength of 215 nm responding to electron beam irradiation only, by setting the hBN single crystal growing conditions to the reported synthetic conditions for obtaining highly pure cBN single crystals in the above non-patent literature 2.
  • the inventors of the present invention have succeeded in easily designing and providing a simple, small-sized, highly efficient, solid-state far ultraviolet light emitting apparatus, unlike a conventional large-scale solid-state laser apparatus using gas necessary to be equipped with a water cooler, or conventional light emitting apparatus using a costly semiconductor solid-state light emitting device produced by repeating multiple layers of complicated pn-junctions and pin-junctions.
  • the present invention has been prosecuted based on a series of the above described findings and successes, and its embodiments are described in the following (1) to (15).
  • a group of the inventions concerning highly pure hexagonal boron nitride single crystals, synthetic methods thereof, and light emitting elements consisting of said single crystals, given in (1) to (7), are denoted by the first group inventions.
  • the inventions concerning solid-state lasers capable of emitting far ultraviolet laser lights given in (8) and (9), wherein light emitting elements comprising said single crystals are combined with electron beam emitting means are denoted by the second group inventions.
  • the inventions concerning the solid-state light emitting apparatus generating far ultraviolet light given in (10) to (15), wherein the light emitting layer consisting of said single crystal and the exciting means are integrally incorporated into a vacuum chamber, are denoted by the third group inventions.
  • a method for producing highly pure hexagonal boron nitride single crystals with far ultraviolet light emission characteristics characterized in that the highly pure hexagonal boron nitride single crystals with far ultraviolet light emission characteristics emitting far ultraviolet light having the maximum light emission peak in the far ultraviolet region at a wavelength of 235 nm or shorter are produced through the procedures of mixing the boron nitride crystals with a highly pure solvent, melting it by heating under high-temperature and high-pressure, and recrystallizing it.
  • a solid-state far ultraviolet light emitting element consisting of a highly pure hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having the maximum light emission peak in the far ultraviolet region at a wavelength of 235 nm or shorter.
  • a solid-state far ultraviolet laser characterized by the generation of laser light with a far ultraviolet region wavelength, using a highly pure hexagonal boron nitride crystal with far ultraviolet light emission characteristics as a direct-type semiconductor solid-state light emitting element and combining therewith an electron beam irradiation apparatus as an exciting source.
  • a solid-state far ultraviolet light emitting apparatus characterized in that a light emitting layer consisting of a highly pure hexagonal boron nitride single crystal capable of emitting far ultraviolet light with a single emission peak in far ultraviolet region at a wavelength of 235 nm or shorter and an exciting means for exciting said light emitting layer are combined and encapsulated together into a vacuum container, and the light emitting layer is excited to emit far ultraviolet light by operation of the exciting means.
  • said exciting means by the electron beam emitting means consists of an anode electrode attached to the back surface of the light emitting layer consisting of a hexagonal boron nitride crystal, an electron beam emitting substrate attached to the light emitting layer through an insulating spacer, a cathode electrode attached to the back surface of the electron beam emitting substrate, and a means to apply voltage between both electrodes; and an electron beam is e
  • the first group inventions make it possible to create hexagonal boron nitride single crystals having specific light emission characteristics showing a strong and high-luminance light emission at a wavelength of 235 nm or shorter, particularly at 210 nm to 220 nm, remarkably at 215 nm in wavelength, not obtained by the prior art.
  • designing of solid-state high-luminance ultraviolet light emitting elements have become possible and various requirements for such as developments of more and more highly densified recording mediums and stronger sterilization by higher power output are able to be satisfied.
  • the second group inventions make it possible to provide a compact solid-state light emitting element and a small solid-state laser having an oscillation wavelength of around 200 nm which has been difficult to be provided hitherto, by using a simple means to excite the element consisting of a highly pure hexagonal boron nitride single crystal with an electron beam.
  • the third group inventions make it possible to provide a solid-state high-luminance light emitting apparatus compact, low cost, highly efficient, long lived, and having a single peak at the wavelength of 210 nm to 220 nm, especially at 215 nm at room temperature, by using a highly pure boron nitride crystal as the emitting layer and by incorporating integrally this emitting layer and an exciting means, especially an electron beam exciting means utilizing a substrate having an electron beam emitting part consisting of a diamond, into a vacuum chamber.
  • the present invention has succeeded in providing the compact solid-state light emitting element and the compact solid-state light emitting apparatus having the oscillation wavelength of 210 to 220 nm, especially at 215 nm, which has been difficult hitherto to be realized, and is expected to contribute largely to the development of various industrial fields.
  • the compact, high power output, low cost and long lived solid-state far ultraviolet light emitting element and the solid-state laser, or the solid-state light emitting apparatus are desired in many fields, and the range of their utilization has broad divergence such as the field of semiconductors (for making the photolithography highly minute), the field of the information (next generation high capacity optical discs), the field of the medical care and living body (ophthalmological treatment, DNA cleavage and the like), and environmental field (sterilization and the like), and the benefit obtained therefrom may be immeasurable.
  • FIG. 1 is a schematic condition diagram showing the region for synthesis of recrystallized hBN.
  • FIG. 2 shows an example of light emission spectra excited by electron beams at room temperature.
  • FIG. 3 shows an absorption spectrum and a light emission spectrum excited by the electron beam at low temperature.
  • FIG. 4 shows a laser-oscillation spectrum excited by the electron beam.
  • FIG. 5 shows excitation current dependence of the laser-oscillation spectrum excited by the electron beam.
  • FIG. 6 shows excitation current dependence of both the light emission intensity and the longitudinal mode width (the fringe width) excited by the electron beam.
  • FIG. 7 illustrates an embodiment wherein a plane different from the light emission output plane is excited.
  • FIG. 8 shows a light emission spectrum excited by the electron beam at low temperature (83 K).
  • FIG. 9 illustrates a schematic diagram of a solid-state laser wherein the laser light is generated and taken out from a parallel plate sample excited by an electron beam utilizing the accelerated electron beam of an electron microscope.
  • FIG. 10-1 illustrates a preliminary step of a silicon substrate for producing a diamond electron emitting device, vapor-deposited with a SiO 2 layer.
  • FIG. 10-2 illustrates a process wherein a photoresist pattern is formed.
  • FIG. 10-3 illustrates processes of SiO 2 etching and SiO 2 mask pattern formation.
  • FIG. 10-4 illustrates a step of forming concave pyramid-shaped pits on the Si substrate and the sectional view of the Si substrate after completion of the step.
  • FIG. 10-5 illustrates a process to produce a diamond device by the CVD method using the etched Si substrate as the template.
  • FIG. 10-6 illustrates a sectional view of the diamond device having protruded structures formed after removal of the Si substrate.
  • FIG. 10-7 illustrates an element which is made by mounting the obtained diamond device on a platinum electrode substrate through a Ti/Au electrode.
  • FIG. 11 illustrates the structure of a solid-state far ultraviolet light emitting apparatus of the present invention.
  • FIG. 12 shows light emission characteristics of the ultraviolet light emitting element.
  • the first group invention of the present invention relates to highly pure hBN single crystals capable of emitting ultraviolet light in far ultraviolet region, synthesis processes thereof, and the light emitting element consisting of said single crystal.
  • the highly pure hBN single crystal capable of emitting ultraviolet light in the far ultraviolet region is produced by processes to treat the raw material of hBN at high-temperature and under high-pressure in the presence of highly pure solvent of alkali metal or alkali earth metal boronitride, followed by recrystallization.
  • the temperature and pressure conditions therefor need high-temperature and high-pressure.
  • 20,000 atmospheric pressure and 1,500° C. or higher are preferable.
  • FIG. 1 shows the temperature and pressure conditions to recrystallize hBN. According to this figure, recrystallization of hBN is possible even under the thermodynamically stable conditions of cBN, but transfer to cBN proceeds more easily with the increase in pressure, and so higher reaction temperature, the condition for stable hBN, is necessary in order to forward hBN recrystallization.
  • the upper limit for the synthesis condition of said single crystal may be about 60,000 atmospheric pressure.
  • the lower limit even under 1 atmospheric pressure or lower, synthesis of high-luminance light emitting highly pure hBN crystals through recrystallization may be possible, if decomposition and oxidization of the solvent can be repressed.
  • the high-luminance light emitting highly pure hBN crystals were synthesized in hBN recrystallization region shown by netting in FIG. 1 .
  • hBN recrystallized from the reaction system containing these oxides and the like as impurities was affected by the impurities such as oxygen and the like, and the hBN single crystal capable of showing light emission phenomenon in the short wavelength region at or below 300 nm, could not be obtained.
  • the present invention can provide highly pure hBN single crystals showing light emission in shorter wavelength region such as at a wavelength of 235 nm or shorter, especially showing high-luminance ultraviolet light emission at a wavelength of 210 nm to 220 nm, remarkably at 215 nm, by using commercially available so-called low pressure phase boron nitride as the raw material and by dissolution thereof into the highly pure solvent followed by recrystallization, which has not been possible to obtain by the conventional techniques or prior arts.
  • Hexagonal boron nitride crystal sintered body (about 0.5 ⁇ m grain size) on which deoxidation processing by heat treatment in vacuum at 1,500° C. and in nitrogen gas stream at 2,000° C. had been applied, was loaded into a molybdenum capsule in a high-pressure cell together with a barium boronitride solvent.
  • the preparation of the solvent and loading the sample into the capsule were all performed under dry nitrogen atmosphere.
  • the high-pressure reaction cell was treated at the pressure and temperature conditions of 25,000 atmospheric pressure and 1,700° C. for 20 hours by a belt type high-pressure apparatus. The increasing rate of temperature was around 50° C./min. After cooling with the rate of about 500° C./min, the cell was decompressed and the sample was recovered together with the molybdenum capsule in the high-pressure cell.
  • the molybdenum capsule was removed by mechanical or chemical treatment (mixed solution of hydrochloric acid and nitric acid), and the sample was recovered. Colorless and transparent hexagonal prism form crystals (around 1 to 3 mm) were obtained, and on the crystals, identification of the phase by optical microscopic observation, SEM observation and X-ray diffraction, and assessment of optical characteristics (transmittance, cathode luminescence) were prosecuted. It was confirmed that the crystal was a single phase of hBN by X-ray diffraction patterns of the crystal grains.
  • a hexagonal boron nitride crystal sintered body (about 0.5 ⁇ m grain size), on which deoxidation processing had been applied by heat treatments in vacua at 1,500° C. and in nitrogen gas stream at 2,000° C., was loaded into the molybdenum capsule together with the solvent of mixed barium boronitride and lithium boronitride 1:1 by weight ratio. High-pressure treatment was applied in the same manner as in Example 1 and the sample was recovered.
  • the recovered sample had a same morphology as in Example 1, and ascertained to be hBN crystal.
  • cathode luminescence measurement a broad light emission was observed near 300 nm, together with a high-luminance light emission at a wavelength of 215 nm.
  • the preparation of this solvent and loading of the sample into capsule were all performed under dry nitrogen atmosphere.
  • the molybdenum reaction cell was processed in nitrogen gas stream at the pressure and temperature conditions of 1 atmospheric pressure and 1,500° C. for two hours. The rate of temperature increase was about 10° C./min.
  • the molybdenum capsule was recovered after cooling with the rate of about 20° C./min.
  • the molybdenum capsule was removed by mechanical or chemical treatment (mixed solution of hydrochloric acid and nitric acid), and the sample inside was recovered.
  • the solvent portion partly showed an aspect of decomposition, but in part, recrystallization was seen at the interface with the hBN raw material.
  • Solvent component was removed by acid treatment. After washing, on the obtained hBN crystal, identification of the phase by optical microscopic observation, SEM observation and X-ray diffraction was prosecuted, and assessment thereof through the optical characteristics tests (transmittance, cathode luminescence) was done.
  • the above comparative example 2 instructs that recrystallization using highly pure solvents is important to produce the highly pure hBN single crystals and to make them express good high-luminance light emission characteristics.
  • These examples and comparative examples show that, in the synthetic conditions, atmosphere and high grade purification of the solvents used are important in producing highly pure high-luminance light emitting hBN single crystals in the present invention.
  • both faces of a parallel plate were formed by delamination along the cleavage plane utilizing cleavability of the c plane of the highly pure hexagonal boron nitride crystal obtained in Example 1, and a Fabry-Perot etalon consisting of the parallel plate of several tens of ⁇ m in thickness was formed.
  • FIG. 9 shows a far ultraviolet solid-state laser element constructed using this parallel plate and an accelerated electron beam of an electron microscope.
  • the element utilizes an electron microscope constructed of machine components: from the electron gun 2 using an LaB 6 filament to the electron beam objective lens 7 .
  • Electron beam flow 3 emitted from the LaB 6 filament of the electron gun was accelerated and incident on the c plane of said parallel plate sample with the energy of 20 KeV and 860 mA/cm 2 .
  • Emitted light from the sample was then collected by an ellipsoidal mirror 8 to be analyzed by a spectrograph 11 .
  • FIG. 4 is the laser-oscillation spectrum at that time, from the c plane of the parallel plate sample about 10 ⁇ m in thickness. As shown in FIG. 4 , there appeared sharp spectrum structures like fine comb-teeth in the light emission centering on near 215 nm.
  • Example 4 making use of cleavability of the boron nitride single crystal obtained in Example 1, a parallel plate sample about 6 ⁇ m in thickness was prepared, oscillated and measured in the same way as in Example 4.
  • FIG. 5 and FIG. 6 show results of the measurements. According to these figures, due to the incompleteness of the cleavability, a laser threshold of the electron beam density was elevated and the threshold values of the laser-oscillation operation and light emission operation were observed.
  • This electron beam density (excitation current value) can be defined as the threshold value.
  • the threshold value As shown in the lower figure of FIG. 6 , when electron beam density (excitation current) is gradually increased, light emission output suddenly starts to increase more rapidly at a certain electron beam density.
  • This electron beam density (excitation current value) can be defined as the threshold value.
  • FIG. 5 from the spectrum with the largest light emitting intensity to the one with the fifth intensity correspond to the measured points above the threshold at which light emission output suddenly starts to increase rapidly in the lower figure of FIG. 6 .
  • a resonance mode of Fabry-Perot etalon that is, a wavelength position of the longitudinal mode shown by ⁇ in FIG. 5
  • these spectra show the width-narrowing of fringe-like spectra in the excitation current value range greater than or equal to the threshold value as is shown in FIG. 6 above, and shows that at each wavelength position of the longitudinal mode the laser-oscillation operates above the threshold value.
  • the element is shown to be usable as a laser element at or above the threshold value, and as a solid-state ultraviolet light emitting element other than a laser element below the threshold value.
  • Laser oscillation operation in the above mentioned example refers to the laser-oscillation operation of the sample, the boron nitride, produced under the specific synthetic condition obtained in Example 1, but this type of laser-oscillation operation is not limited to the one obtained in Example 1.
  • Example 1 Similar results were observed on the boron nitride grown under the synthetic conditions of Example 2 or 3.
  • the parallel plate Fabry-Perot etalon was used.
  • the parallel plate instead of the parallel plate, the hBN crystal is processed into the shape of rectangular waveguide as is shown in FIG. 7 .
  • This structure allows light to reflect at both end faces of the waveguide to resonate.
  • the side face not containing the face to take out the laser light or the emitted light, is excited.
  • Adopting this method due to the fact that the face excited by electron is different from the faces providing laser resonator mirrors, damages such as pollution and element face brake-down of the laser end face and the excitation end face can be repressed, and also amplification region can be set over the whole waveguide.
  • by optimizing the shape of the light waveguide single mode oscillations in both transverse mode and longitudinal mode are possible.
  • LaB 6 filament was used as the source of accelerated electron beam in above described Examples 4 and 5, it is possible to drastically decrease the element size by utilizing, for example, small cathodes such as carbon nano-tube emitter or a diamond emitter.
  • Example 4 as the acceleration energy condition of the electron beam, acceleration voltage of 20 keV and electron density of 860 mA/cm 2 were adopted, but the laser-oscillation is not restricted to this condition, but should be determined by the optical loss at both end faces of the laser resonator and the optical loss in the waveguide. With the sample showing the spectrum in FIG. 4 , similar oscillation operation is confirmed, for example, at the electron density of 0.2 mA/cm 2 .
  • Example 4 the cleavage planes without modification were utilized as reflection planes of the Fabry-Perot etalon. But it is possible to obtain positively a high reflectivity by adopting an embodiment to deposit suitable metals (Al, MgF 2 ) and the like on the cleavage planes to increase the Q value of the resonator and decrease the threshold value. This procedure may be expected as an effective means.
  • Examples 4 and 5 described above an example was disclosed wherein the single crystal obtained in the embodiment of the first group invention was used to design a solid-state laser.
  • the boron nitride single crystal itself can be made into a structure appropriate to resonate the light.
  • the present invention has a function as far ultraviolet generation solid-state light emitting elements, not restricted to the laser element. Therefore, the present invention involves an embodiment as solid-state light emitting elements other than the laser elements.
  • the boron nitride crystal does not need to be constructed into a special structure like the resonanator structure of a laser element.
  • the single crystal has only to be cut into a suitable size and shape, whereto an electron beam emitting apparatus is combined, and is used.
  • the third embodiments of the present invention provide specific utilization methods for the invention of the highly pure hexagonal boron nitride single crystals with far ultraviolet light emission characteristics obtained in the first embodiments of the present invention, and propose specifically a solid-state light emitting apparatus of electron beam excitation type emitting far ultraviolet light having a single light emission peak at 215 nm.
  • FIGS. 10-1 to 10 - 7 are process drawings illustrating each of producing steps of the electron emitting device based on a diamond substrate that causes the light emitting element or the light emitting layer consisting of said single crystal of the present invention to emit light.
  • FIG. 11 illustrates structure of a solid-state far ultraviolet light emitting apparatus of the present invention produced by this process and FIG. 12 shows far ultraviolet light emission characteristics of this apparatus.
  • the highly pure hexagonal boron nitride single crystals were produced according to the same processes as in Example 1.
  • the resultant crystals were analyzed and assessed by various analytical means such as identification of the phase with optical microscopic observation, SEM observation and X-ray diffraction, and optical characteristics tests (transmittance, cathode luminescence).
  • the crystal was ascertained to be of the single hBN phase.
  • cathode luminescence observation single-peaked high-luminance ultraviolet light emission was observed near a wavelength of 215 nm at room temperature as shown in FIG. 2 , and, an ultraviolet light emission spectrum (as shown by ⁇ in the figure) was observed at 210 nm to 235 nm at the temperature of 83 K, as shown in FIG. 3 .
  • Production processes of an electron emitting device made of diamond for exciting the light emitting layer obtained in Example 6 is disclosed. These processes consist of steps illustrated in from FIG. 10-1 to FIG. 10-7 .
  • a silicon ( 100 ) substrate 12 is provided, and SiO 2 layer 13 of about 200 nm in thickness is formed on the substrate.
  • photoresist was applied uniformly, square pits with one side 70 ⁇ m in length were formed at intervals of 7 ⁇ m ( FIG. 10-2 ) using a photoresist pattern 14 , and then naked SiO 2 part was etched 15 by hydrogen fluoride aqueous solution to form a mask pattern on the SiO 2 layer 13 ( FIG. 10-3 ).
  • concave pyramid-shaped pits consisting of four ( 111 ) planes are formed on the Si ( 100 ) substrate 12 by 15% (CH 3 ) 4 NOH solution heated to 90° C. ( FIG. 10-4 ).
  • a boron-added diamond plane is formed by using hot filament CVD method or the like and mixing diborane gas (B 2 H 6 ) to make the boron atom/carbon atom concentration ratio of about 100 ppm ( FIG. 10-5 ).
  • diborane gas B 2 H 6
  • a thickness of about tens of ⁇ m is needed.
  • a glass plate 21 (about 100 ⁇ m in thickness) for insulation was provided on the electron emitting element produced by the procedure like in Example 7, a circular hole with a diameter of about 500 ⁇ m was formed, and gold (Au) 20 was vapor-deposited on the surface around the hole edge with thickness of about 50 ⁇ m as shown in the figure.
  • Au gold
  • the thin film of the hexagonal boron nitride crystal produced in Example 6 was placed so that Ti/Au-deposited face thereof contacts with the gold-deposited plane, and thus an electron emission device having the face 17 with the pyramid-shaped minute diamond protrusions as a cathode and the Ti/Au face on the hexagonal boron nitride film as an anode 24 is formed.
  • the gold-deposited plane on the glass plate works as an extraction electrode for the anode.
  • the ultraviolet-emission window of this ultraviolet light emitting element is encapsulated in a glass tube having an window of quartz or the like, electrodes are pulled out, and the glass tube is made to be vacuum (for example, high vacuum at 1 ⁇ 10 ⁇ 5 Torr or lower).
  • FIG. 12 shows a light-emission spectrum (with a peak at about 215 nm and also light-emission bands at 300 nm) of this light emitting apparatus.
  • the present invention has succeeded in obtaining a compact and highly efficient ultraviolet light emitting element or an apparatus completely different from conventional far ultraviolet light emitting apparatuses.
  • These examples show just only some embodiments thereof, and the present invention is not limited to the above examples.
  • the far ultraviolet light emitting apparatus in the above described examples uses the boron nitride produced under the specific synthetic condition obtained in Example 1, and the far ultraviolet light-emission by electron beam excitation of this boron nitride is referred to here.
  • the light emission like this is not limited to the one obtained in Example 1.
  • Example 1 similar results were observed on the boron nitride grown under the synthetic conditions of Example 2 and 3.
  • the diamond emitter is used as an electron beam source, but, for example, a carbon nano-tube emitter or the like may also be utilized.
  • a patterned electron beam emission and far ultraviolet light emission can be obtained and utilized for display apparatus and the like, for example.
  • Non-patent literature 3 Nature Materials, vol. 3, 404-409 (2004)
  • the present invention provides a hexagonal boron nitride single crystal showing a strong high-luminance light emitting behavior at the wavelength of 235 nm or shorter, especially at 210 to 215 nm, having been never obtained by the prior arts. Due to this, a solid-state high-luminance ultraviolet light emitting element has become possible to be easily designed. In addition, it is of great significance that the invention has provided a basic material capable of responding to recent increasing needs for developing higher density recording media, and the present invention is expected to contribute largely to the development of industry. Also, needs for sterilization treatment by ultraviolet light have recently been taken up seriously as one of the important environmental measures.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011224A1 (en) * 2005-02-16 2008-01-17 Ngk Insulators, Ltd. Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
US20090078851A1 (en) * 2005-07-01 2009-03-26 National Institute For Materials Science Far Ultraviolet With High Luminance Emitting High-Purity Hexagonal Boron Nitride Monocrystalline Powder And Method Of Manufacturing The Same
US8923098B2 (en) * 2013-02-27 2014-12-30 Headway Technologies, Inc. Tilted structures to reduce reflection in laser-assisted TAMR
CN111710752A (zh) * 2020-06-24 2020-09-25 吉林大学 基于立方氮化硼厚膜的msm型深紫外光电探测器及制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130078424A1 (en) * 2011-07-22 2013-03-28 Guqiao Ding Hexagonal Boron Nitride Substrate With Monatomic Layer Step, And Preparation Method And Application Thereof
WO2014057982A1 (fr) * 2012-10-12 2014-04-17 独立行政法人物質・材料研究機構 Procédé de synthèse de nitrure de tungstène hexagonal, et nitrure de tungstène hexagonal
KR20150026364A (ko) * 2013-09-02 2015-03-11 엘지전자 주식회사 질화 붕소계 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지
US11964062B2 (en) 2019-09-03 2024-04-23 Luxhygenix Inc. Antimicrobial device using ultraviolet light
US11439840B2 (en) 2021-01-21 2022-09-13 Joseph McQuirter, SR. Far ultraviolet light application device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141802A (en) * 1961-05-19 1964-07-21 Gen Electric Semiconducting cubic boron nitride and methods for preparing the same
US3212851A (en) * 1962-05-02 1965-10-19 Gen Electric Boron nitride having a new structure
US3212852A (en) * 1962-07-30 1965-10-19 Gen Electric Method for converting hexagonal boron nitride to a new structure
US3233988A (en) * 1964-05-19 1966-02-08 Gen Electric Cubic boron nitride compact and method for its production
US3772428A (en) * 1971-01-28 1973-11-13 Gen Electric Continuous growth of cubic boron nitride

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045186A (en) * 1973-09-06 1977-08-30 General Electric Company Method for producing large soft hexagonal boron nitride particles
US4409193A (en) * 1981-03-06 1983-10-11 National Institute For Researches In Inorganic Materials Process for preparing cubic boron nitride
JPH06219899A (ja) * 1992-08-21 1994-08-09 Ube Ind Ltd 熱分解窒化ホウ素膜及び被覆物品
JP2001072499A (ja) * 1999-06-29 2001-03-21 Japan Science & Technology Corp 六方晶窒化ホウ素単結晶の育成方法
US6660241B2 (en) * 2000-05-01 2003-12-09 Saint-Gobain Ceramics & Plastics, Inc. Highly delaminated hexagonal boron nitride powders, process for making, and uses thereof
JP3898127B2 (ja) * 2000-10-13 2007-03-28 独立行政法人科学技術振興機構 第ｉｉｉ族又は第ｉｖ族の金属元素を含む窒化物単結晶及びその製造方法
AU2002302968A1 (en) * 2001-05-28 2002-12-09 Showa Denko K.K. Semiconductor device, semiconductor layer and production method thereof
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP3598381B2 (ja) * 2002-07-02 2004-12-08 独立行政法人物質・材料研究機構 一般式；ＢＮで示され、六方晶系５Ｈ型ないしは６Ｈ型多形構造を有し、紫外域で発光するｓｐ３結合型窒化ホウ素とその製造方法、及びこれを利用した機能性材料
WO2006087982A1 (fr) * 2005-02-16 2006-08-24 Ngk Insulators, Ltd. Procédé de fabrication d’un monocristal hexagonal de nitrure de bore et monocristal hexagonal de nitrure de bore
IT201700078297A1 (it) 2017-07-11 2019-01-11 Inst Rundfunktechnik Gmbh Verfahren und einrichtung zum ableiten von audioparameterwerten aus einem aes67 kompatiblen audioinformationssignal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141802A (en) * 1961-05-19 1964-07-21 Gen Electric Semiconducting cubic boron nitride and methods for preparing the same
US3212851A (en) * 1962-05-02 1965-10-19 Gen Electric Boron nitride having a new structure
US3212852A (en) * 1962-07-30 1965-10-19 Gen Electric Method for converting hexagonal boron nitride to a new structure
US3233988A (en) * 1964-05-19 1966-02-08 Gen Electric Cubic boron nitride compact and method for its production
US3772428A (en) * 1971-01-28 1973-11-13 Gen Electric Continuous growth of cubic boron nitride

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011224A1 (en) * 2005-02-16 2008-01-17 Ngk Insulators, Ltd. Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
US7815733B2 (en) * 2005-02-16 2010-10-19 Ngk Insulators, Ltd. Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
US20090078851A1 (en) * 2005-07-01 2009-03-26 National Institute For Materials Science Far Ultraviolet With High Luminance Emitting High-Purity Hexagonal Boron Nitride Monocrystalline Powder And Method Of Manufacturing The Same
US7863554B2 (en) * 2005-07-01 2011-01-04 National Institute For Materials Science Far ultraviolet with high luminance emitting high-purity hexagonal boron nitride monocrystalline powder and method of manufacturing the same
US8923098B2 (en) * 2013-02-27 2014-12-30 Headway Technologies, Inc. Tilted structures to reduce reflection in laser-assisted TAMR
US20150109893A1 (en) * 2013-02-27 2015-04-23 Headway Technologies, Inc. Tilted Structures to Reduce Reflection in Laser-Assisted TAMR
US9245554B2 (en) * 2013-02-27 2016-01-26 Headway Technologies, Inc. Tilted structures to reduce reflection in laser-assisted TAMR
CN111710752A (zh) * 2020-06-24 2020-09-25 吉林大学 基于立方氮化硼厚膜的msm型深紫外光电探测器及制备方法

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