US20060119216A1 - Micro oscillating element - Google Patents

Micro oscillating element Download PDF

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Publication number
US20060119216A1
US20060119216A1 US11/271,959 US27195905A US2006119216A1 US 20060119216 A1 US20060119216 A1 US 20060119216A1 US 27195905 A US27195905 A US 27195905A US 2006119216 A1 US2006119216 A1 US 2006119216A1
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United States
Prior art keywords
comb
electrode
tooth
section
electrode teeth
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Abandoned
Application number
US11/271,959
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English (en)
Inventor
Norinao Kouma
Osamu Tsuboi
Hiromitsu Soneda
Satoshi Ueda
Ippei Sawaki
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Fujitsu Ltd
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Fujitsu Ltd
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Assigned to FUJITSU LIMITED reassignment FUJITSU LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOUMA, NORINAO, SAWAKI, IPPEI, SONEDA, HIROMITSU, TSUBOI, OSAMU, UEDA, SATOSHI
Publication of US20060119216A1 publication Critical patent/US20060119216A1/en
Priority to US12/659,975 priority Critical patent/US8049394B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0145—Flexible holders
    • B81B2203/0154—Torsion bars
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/904—Micromirror

Definitions

  • the present invention generally relates to a micro oscillating element having an oscillation section capable of rotary displacement.
  • the present invention relates to a micromirror element, an acceleration sensor, an angular velocity sensor, and a vibration element, for example.
  • optical signals are transmitted using optical fiber as a medium, and an optical switching device is typically used to switch the transmission path of the optical signal from one fiber to another fiber.
  • the characteristics required of the optical switching device include a large capacity, high velocity, and high reliability during the switching operation.
  • a micromirror element comprises a mirror surface for reflecting light, and is capable of varying the direction in which the light is reflected by oscillating the mirror surface.
  • Electrostatic micromirror elements which use electrostatic force to tilt the mirror surface are employed in many devices. Electrostatic micromirror elements can be divided into two main types, those manufactured by so-called surface micromachining technology, and those manufactured by so-called bulk micromachining technology.
  • material thin film corresponding to each constitutional region is machined into a desired pattern, and such patterns are laminated successively to form the various regions constituting the element, such as a supporting and fixing portion, an oscillation section, a mirror surface, and an electrode portion, and a sacrificial layer which is removed at a later stage.
  • a material substrate is itself etched to form the fixing and supporting portion, the oscillation section, and so on into a desired form, whereupon the mirror surface and electrodes are formed with thin film.
  • the mirror surface for reflecting light has a high degree of flatness.
  • the mirror surface that is ultimately formed is thin, and therefore buckles easily. Accordingly, it is difficult to achieve a high degree of flatness on a mirror surface with a large surface area.
  • the relatively thick material substrate itself is cut into by etching technology to form a mirror supporting portion, and the mirror surface is provided on the mirror supporting portion. Hence the rigidity of even a mirror surface with a large surface area can be secured. As a result, a mirror surface having a sufficiently high degree of optical flatness can be formed.
  • FIG. 32 is a partial perspective view of a conventional micromirror element X 6 manufactured according to bulk micromachining technology.
  • the micromirror element X 6 comprises a mirror supporting portion 61 provided with a mirror surface 64 on its upper face, a frame 62 (partially omitted from the drawing), and a pair of torsion bars 63 connecting the mirror supporting portion 61 and frame 62 .
  • Comb-tooth electrodes 61 a, 61 b are formed on the pair of end portions of the mirror supporting portion 61 .
  • a pair of inwardly-extending comb-tooth electrodes 62 a, 62 b is formed on the frame 62 corresponding to the comb-tooth electrodes 61 a, 61 b.
  • the pair of torsion bars 63 defines an oscillation axis A 6 of the oscillating operation of the mirror supporting portion 61 in relation to the frame 62 .
  • one set of the comb-tooth electrodes provided close to each other for generating a driving force for example the comb-tooth electrodes 61 a and 62 a
  • a driving force electrostatic attraction
  • the comb-tooth electrodes 61 a and 62 a are oriented in two tiers when no voltage is applied, as shown in FIG. 33A .
  • the comb-tooth electrode 61 a is attracted toward the comb-tooth electrode 62 a, as shown in FIG. 33B , whereby the mirror supporting portion 61 is rotationally displaced.
  • the comb-tooth electrode 61 a is charged positively and the comb-tooth electrode 62 a is charged negatively, the comb-tooth electrode 61 a is attracted toward the comb-tooth electrode 62 a, and thereby the mirror supporting portion 61 is rotationally displaced about the oscillation axis A 6 with the torsion bars 63 being twisted.
  • the mirror supporting portion 61 By driving the mirror supporting portion 61 to tilt in this manner, the reflection direction of the light that is reflected by the mirror surface 64 provided on the mirror supporting portion 61 is switched.
  • the length L 61 of the mirror supporting portion 61 which occupies most part of the element, need be shortened.
  • shrinking the length L 61 cannot easily be compatible with maintaining the driving force enough to oscillate the mirror supporting portion 61 .
  • the plurality of electrode teeth of the respective comb-tooth electrodes 61 a, 61 b are supported on the mirror supporting portion 61 at intervals in the oscillation axis A 6 direction, and therefore the number of electrode teeth of the comb-tooth electrodes 61 a, 61 b is restricted by the length L 61 of the mirror supporting portion 61 .
  • the number of electrode teeth constituting the set of comb-tooth electrodes 61 a, 62 a and the number of electrode teeth constituting the set of comb-tooth electrodes 61 b, 62 b are restricted by the length L 61 of the mirror supporting portion 61 .
  • a sufficient surface area to allow the electrode teeth of the set of comb-tooth electrodes 61 a, 62 a to face each other and a sufficient surface area to allow the electrode teeth of the set of comb-tooth electrodes 61 b, 62 b to face each other must be secured.
  • a method of reducing a width d 1 of each electrode tooth and narrowing a gap d 2 between the electrode teeth such that the number of electrode teeth of the comb-tooth electrodes 61 a, 61 b, 62 a, 62 b is set at no less than a fixed number, or a method of increasing the distance between the mirror supporting portion 61 and the frame 62 and increasing a length d 3 of each electrode tooth, may be considered.
  • micro oscillating elements such as the micromirror element X 6
  • a characteristic whereby large rotary displacement and a high speed oscillating operation can be realized at a low drive voltage is typically demanded of the region in which the oscillating operation takes place, but in order to obtain such a characteristic, the driving force for driving the oscillating operation of the oscillation section must be held at no less than a fixed level.
  • the present invention has been proposed in consideration of the circumstances described above, and it is an object thereof to provide a micro oscillating element which can be miniaturized while maintaining sufficient driving force for driving the oscillating operation of an oscillation section.
  • a micro oscillating element provided in accordance with the present invention comprises: an oscillation section supporting frame; and an oscillation section including a movable functional section, an arm section, and a first comb-tooth electrode.
  • the arm section extends from the movable functional section.
  • the first comb-tooth electrode comprises a plurality of first electrode teeth each extending from the arm section in a direction intersecting the arm section.
  • the micro oscillating element comprises: a torsional joining section which connects the frame and the oscillation section to each other, and also defines an oscillation axis of an oscillating operation of the oscillation section; and a second comb-tooth electrode cooperating with the first comb-tooth electrode for causing the oscillation section to oscillate.
  • the second comb-tooth electrode comprises a plurality of second electrode teeth each extending from the frame in a direction intersecting the arm section.
  • the first and second comb-tooth electrodes constitute a so-called comb-tooth electrode-type actuator serving as a driving mechanism for driving the oscillating operation of the oscillation section.
  • the element of the present invention may be applied to a micromirror element, for example.
  • the first electrode teeth of the first comb-tooth electrode are supported on the arm section, which extends from the movable functional section.
  • the first electrode teeth may be arranged at predetermined intervals (i.e., spaced from each other) in the longitudinal direction of the arm section, while the second electrode teeth may be supported on the frame and arranged at predetermined intervals in the longitudinal direction of the arm section. It should be appreciated that the first electrode teeth (and the second electrode teeth) are not supported directly on the movable functional section.
  • the number of electrode teeth (first electrode teeth, second electrode teeth) constituting the set of comb-tooth electrodes is not restricted by the length of the movable functional section in the longitudinal direction of the oscillation axis, which intersects the elongated arm section at a right angle, for example.
  • a surface area which enables the electrode teeth of the first and second comb-tooth electrodes to face each other can be secured by providing the first and second electrode teeth in a desired number, regardless of the design dimension of the movable functional section in the oscillation axis direction.
  • the element of the present invention is suitable for achieving miniaturization by reducing the design dimension of the movable functional section, and accordingly the entire element, in the oscillation axis direction while maintaining enough driving force to drive the oscillating operation of the oscillation section by providing the first and second electrode teeth in a desired number, regardless of the design dimension of the movable functional section in the oscillation axis direction.
  • the first electrode teeth may extend in parallel to the oscillation axis
  • the second electrode teeth may preferably extend in parallel to the first electrode teeth.
  • the extension direction of the plurality of first electrode teeth may intersect the extension direction of the oscillation axis.
  • the extension direction of the second electrode teeth may preferably be parallel to the extension direction of the first electrode teeth. Even when the extension direction of the first and second electrode teeth is non-parallel to the oscillation axis, the driving force for driving the oscillating operation about the oscillation axis can be generated by the first and second comb-tooth electrodes.
  • the first comb-tooth electrode may preferably comprise at least three electrode teeth, and the distance between two adjacent first electrode teeth may preferably increase steadily as the teeth are farther from the oscillation axis.
  • the second comb-tooth electrode may preferably comprise at least three electrode teeth, and the distance between two adjacent second electrode teeth may preferably increase steadily as the teeth are away from the oscillation axis.
  • the displacement between the electrode teeth (as viewed in the extension direction of the arm section) during the oscillating operation of the oscillation section increases, and hence these constitutions are favorable for avoiding contact between the first electrode teeth and second electrode teeth during the oscillating operation of the oscillation section.
  • a relevant one of the first electrode teeth may be positioned between two adjacent second electrode teeth (adjacent as viewed in the extension direction of the arm section), and the relevant tooth may be offset toward the oscillation axis from a central position between these two second electrode teeth.
  • the same first electrode tooth may be offset away from the oscillation axis from the central position between these two second electrode teeth.
  • the micro oscillating element of the present invention may further comprise a third comb-tooth electrode and a fourth comb-tooth electrode cooperating with the third comb-tooth electrode for causing the oscillation section to oscillate.
  • the third comb-tooth electrode may comprise a plurality of third electrode teeth that extend from the arm section in a direction intersecting the arm section, and that are spaced from each other in a longitudinal direction of the arm section.
  • the fourth comb-tooth electrode may comprise a plurality of fourth electrode teeth that extend from the frame in a direction intersecting the arm section. In this case, the fourth comb-tooth electrode may be electrically separated from the second comb-tooth electrode.
  • the first and third comb-tooth electrodes may preferably be electrically connected to each other.
  • the electrostatic force generated between the first and second comb-tooth electrodes and the electrostatic force generated between the third and fourth comb-tooth electrodes can be caused to differ by making different the potential that is applied to the second comb-tooth electrode and the potential that is applied to the fourth comb-tooth electrode.
  • the rotary displacement of the movable functional section about a predetermined axis which intersects the oscillation axis can be controlled. In other words, the attitude of the movable functional section about this axis can be regulated.
  • this micro oscillating element may further comprise an additional arm section extending from the movable functional section, a third comb-tooth electrode and a fourth comb-tooth electrode.
  • the third comb-tooth electrode may comprise a plurality of third electrode teeth that extend from the additional arm section in a direction intersecting the additional arm section, and that are spaced from each other in a longitudinal direction of the additional arm section.
  • the fourth comb-tooth electrode may comprise a plurality of fourth electrode teeth for causing the oscillation section to oscillate in cooperation with the third comb-tooth electrode.
  • the fourth electrode teeth may be arranged to extend from the frame in a direction intersecting the additional arm section and to be spaced from each other in a longitudinal direction of the additional arm section.
  • the first comb-tooth electrode and the third comb-tooth electrode may be electrically separated from each other.
  • the second and the fourth comb-tooth electrodes may preferably be electrically connected to each other.
  • the electrostatic force generated between the first and second comb-tooth electrodes and the electrostatic force generated between the third and fourth comb-tooth electrodes can be caused to differ by making different the potential that is applied to the first comb-tooth electrode and the potential that is applied to the third comb-tooth electrode.
  • the rotary displacement of the movable functional section about a predetermined axis which intersects the oscillation axis can be controlled. In other words, the attitude of the movable functional section about this axis can be regulated.
  • the micro oscillating element may further comprise an additional frame, an additional torsional joining section and a driving mechanism.
  • the additional torsional joining section may connect the oscillation section supporting frame and the additional frame to each other and also defines an additional oscillation axis of an oscillating operation of the additional frame.
  • the additional oscillation axis may extend in a direction intersecting the oscillation axis of the oscillation section supporting frame.
  • the driving mechanism may cause the additional frame to oscillate about the additional oscillation axis.
  • the extension direction of the oscillation axis may preferably be orthogonal to the extension direction of the additional oscillation axis.
  • the element of this example is a biaxial oscillating element.
  • FIG. 1 is a plan view of a micromirror element according to a first embodiment of the present invention
  • FIG. 2 is a partial plan view of the micromirror element shown in FIG. 1 ;
  • FIG. 3 is a sectional view along a line III-III in FIG. 1 ;
  • FIG. 4 is a sectional view along a ling IV-IV in FIG. 1 ;
  • FIGS. 5A-5D show some steps of a manufacturing method for the micromirror element in FIG. 1 ;
  • FIGS. 6A-6D show subsequent processes following on from FIG. 5 ;
  • FIG. 7 is a sectional view along the line III-III of FIG. 1 during driving
  • FIG. 8 is a plan view of a first modified example of the micromirror element of FIG. 1 ;
  • FIG. 9 is a plan view of a second modified example of the micromirror element of FIG. 1 ;
  • FIG. 10 is a plan view of a third modified example of the micromirror element of FIG. 1 ;
  • FIG. 11 is a plan view of a fourth modified example of the micromirror element of FIG. 1 ;
  • FIG. 12 is a plan view of a fifth modified example of the micromirror element of FIG. 1 ;
  • FIG. 13 is a plan view of a sixth modified example of the micromirror element of FIG. 1 ;
  • FIG. 14 is a plan view of a seventh modified example of the micromirror element of FIG. 1 ;
  • FIG. 15 is a plan view of a micromirror element according to a second embodiment of the present invention.
  • FIG. 16 is a partial plan view of the micromirror element shown in FIG. 15 ;
  • FIG. 17 is a sectional view along a line XVII-XVII in FIG. 15 ;
  • FIG. 18 is a sectional view along a ling XVIII-XVIII in FIG. 15 ;
  • FIG. 19 is a plan view of a micromirror element according to a third embodiment of the present invention.
  • FIG. 20 is a partial plan view of the micromirror element shown in FIG. 19 ;
  • FIG. 21 is a sectional view along a line XXI-XXI in FIG. 19 ;
  • FIG. 22 is a sectional view along a ling XXII-XXII in FIG. 19 ;
  • FIG. 23 is a sectional view along a ling XXIII-XXIII in FIG. 19 ;
  • FIG. 24 is a plan view of a micromirror element according to a fourth embodiment of the present invention.
  • FIG. 25 is a sectional view along a line XXV-XXV in FIG. 24 ;
  • FIG. 26 is a plan view of a micromirror element according to a fifth embodiment of the present invention.
  • FIG. 27 is a partial plan view of the micromirror element shown in FIG. 26 ;
  • FIG. 28 is a sectional view along a line XXVIII-XXVIII in FIG. 26 ;
  • FIG. 29 is a sectional view along a line XXIX-XXIX in FIG. 26 ;
  • FIG. 30 is a sectional view along a line XXX-XXX in FIG. 26 ;
  • FIG. 31 shows a micromirror array comprising a plurality of the micromirror elements shown in FIG. 26 ;
  • FIG. 32 is a partial perspective view of a conventional micromirror element.
  • FIGS. 33A-33B show the orientation of a set of comb-tooth electrodes in the micromirror element shown in FIG. 32 .
  • FIGS. 1 to 4 show a micromirror element X 1 according to a first embodiment of the present invention.
  • FIG. 1 is a plan view of the micromirror element X 1
  • FIG. 2 is a partial plan view of the micromirror element X 1
  • FIGS. 3 and 4 are sectional views along a line III-III and a line IV-IV respectively.
  • the micromirror element X 1 comprises an oscillation section 10 , a frame 21 , a torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B, and is manufactured using bulk micromachining technology, such as MEMS technology, by machining a material substrate, which is a so-called SOI (silicon on insulator) substrate.
  • the material substrate has a laminated structure constituted of a first silicon layer and second silicon layer, and an insulation layer provided between the silicon layers. Each silicon layer is provided with a predetermined conductivity by means of impurity doping.
  • FIG. 1 shows the constitutions originating from the second silicon layer of the micromirror element X 1 .
  • the oscillation section 10 comprises a mirror supporting portion 11 , an arm section 12 , and comb-tooth electrodes 13 A, 13 B.
  • the mirror supporting portion 11 originates from the first silicon layer, and a mirror surface 11 a having a light reflecting function is provided on the surface thereof.
  • the mirror surface 11 a has a laminated structure constituted of a Cr layer deposited on the first silicon layer and an Au layer deposited on the Cr layer, for example.
  • the mirror supporting portion 11 and mirror surface 11 a constitute a movable functional section of the present invention.
  • a length L 1 shown in FIG. 1 of the mirror supporting portion 11 , and accordingly the movable functional section, is between 20 and 300 ⁇ m, for example.
  • the arm section 12 originates mainly on the first silicon layer, and extends from the mirror supporting portion 11 .
  • a length L 2 of the arm section 12 shown in FIG. 1 is between 10 and 100 ⁇ m, for example.
  • the comb-tooth electrode 13 A is constituted of a plurality of electrode teeth 13 a.
  • the plurality of electrode teeth 13 a extend individually from the arm section 12 at intervals from each other in the extension direction of the arm section 12 .
  • the comb-tooth electrode 13 B is constituted of a plurality of electrode teeth 13 b.
  • the plurality of electrode teeth 13 b extend individually from the arm section 12 on the opposite side to the electrode teeth 13 a at intervals from each other in the extension direction of the arm section 12 .
  • the electrode teeth 13 a, 13 b originate mainly on the first silicon layer.
  • the extension direction of the electrode teeth 13 a, 13 b is orthogonal to the extension direction of the arm section 12 . As shown in FIG.
  • the electrode teeth 13 a stand upright in an element thickness direction H, and the electrode teeth 13 b also stand upright in the element thickness direction H. Further, in this embodiment the width of the electrode teeth 13 a, 13 b is uniform, as shown in FIG. 1 .
  • the comb-tooth electrode 13 A and its electrode teeth 13 a are connected electrically to the comb-tooth electrode 13 B and its electrode teeth 13 b via the arm section 12 .
  • the frame 21 originates mainly on the first and second silicon layers, and takes a form which surrounds the oscillation section 10 .
  • the region of the frame 21 which originates from the second silicon layer is shown in FIG. 2 .
  • the frame 21 has a predetermined mechanical strength for supporting the structure within the frame 21 .
  • a length L 3 of the frame 21 shown in FIG. 1 is between 5 and 50 ⁇ m, for example.
  • the torsional joining section 22 is constituted of a pair of torsion bars 22 a.
  • the torsion bars 22 a originate mainly on the first silicon layer, and are connected to the arm section 12 of the oscillation section 10 and the region of the frame 21 originating from the first silicon layer, thereby linking these components.
  • the region of the frame 21 originating from the first silicon layer and the arm section 12 are electrically connected by the torsion bars 22 a.
  • the torsion bars 22 a are thinner than the arm section 12 in the element thickness direction H, and also thinner than the region of the frame 21 originating from the first silicon layer.
  • the torsional joining section 22 constituted of the pair of torsion bars 22 a defines an oscillation axis A 1 for the oscillating operation of the oscillation section 10 and its mirror supporting portion 11 .
  • the oscillation axis A 1 is orthogonal to a direction D shown by the arrow in FIG. 1 , or in other words the extension direction of the arm section 12 . Accordingly, the extension direction of the electrode teeth 13 a, 13 b described above, which extend from the arm section 12 in an orthogonal direction to the extension direction of the arm section 12 , is parallel to the oscillation axis A 1 .
  • the oscillation axis A 1 preferably passes through or close to the center of gravity of the oscillation section 10 .
  • a set of torsion bars formed in parallel on the first silicon layer may be provided in place of the torsion bars 22 a.
  • the gap between the set of torsion bars preferably increases steadily from the frame 21 toward the arm section 12 .
  • the oscillation axis A 1 may be defined by providing two sets of two such parallel torsion bars in place of the pair of torsion bars 22 a. This also applies to the micromirror elements to be described hereafter.
  • the comb-tooth electrode 23 A is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 A, and is constituted of a plurality of electrode teeth 23 a.
  • the plurality of electrode teeth 23 a extend individually from the frame 21 at intervals from each other in the extension direction of the arm section 12 .
  • the comb-tooth electrode 23 A originates mainly on the second silicon layer, and as shown in FIG. 2 , is fixed to the region of the frame 21 originating from the second silicon layer.
  • the extension direction of the electrode teeth 23 a is orthogonal to the extension direction of the arm section 12 and parallel to the oscillation axis A 1 .
  • the width of the electrode teeth 23 a is uniform, and as shown in FIG. 3 , the electrode teeth 23 a stand upright in the element thickness direction H.
  • the comb-tooth electrode 23 A constitutes a driving mechanism together with the comb-tooth electrode 13 A.
  • the comb-tooth electrodes 13 A, 23 A are positioned at different heights when the oscillation section 10 is inoperative, for example.
  • the electrode teeth 13 a, 23 a of the comb-tooth electrodes 13 A, 23 A are offset from each other so that the comb-tooth electrodes 13 A, 23 A do not contact each other during the oscillating operation of the oscillation section 10 .
  • the distances between two adjacent electrode teeth 13 a are all the same, and the distances between two adjacent electrode teeth 23 a are all the same.
  • the electrode teeth 13 a positioned between two electrode teeth 23 a in the extension direction of the arm section 12 are positioned centrally between the two electrode teeth 23 a.
  • the comb-tooth electrode 23 B is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 B, and is constituted of a plurality of electrode teeth 23 b.
  • the plurality of electrode teeth 23 b extend individually from the frame 21 at intervals from each other in the extension direction of the arm section 12 .
  • the comb-tooth electrode 23 B originates mainly on the second silicon layer, and as shown in FIG. 2 , is fixed to the region of the frame 21 originating from the second silicon layer.
  • the comb-tooth electrode 23 B and its electrode teeth 23 b are electrically connected to the comb-tooth electrode 23 A and its electrode teeth 23 a via the region of the frame 21 originating from the second silicon layer. In this embodiment, as shown in FIG.
  • the extension direction of the electrode teeth 23 b is orthogonal to the extension direction of the arm section 12 and parallel to the oscillation axis A 1 . Also in this embodiment, as shown in FIG. 1 , the width of the electrode teeth 23 b is uniform, and the electrode teeth 23 b stand upright in the element thickness direction H, similarly to the electrode teeth 23 a.
  • the comb-tooth electrode 23 B constitutes a driving mechanism together with the comb-tooth electrode 13 B.
  • the comb-tooth electrodes 13 B, 23 B are positioned at different heights when the oscillation section 10 is inoperative, for example.
  • the electrode teeth 13 b, 23 b of the comb-tooth electrodes 13 B, 23 B are offset from each other so that the comb-tooth electrodes 13 B, 23 B do not contact each other during the oscillating operation of the oscillation section 10 .
  • the distances between two adjacent electrode teeth 13 b are all the same, and the distances between two adjacent electrode teeth 23 b are all the same.
  • the electrode teeth 13 b positioned between two electrode teeth 23 b in the extension direction of the arm section 12 are positioned centrally between the two electrode teeth 23 b.
  • FIGS. 5 and 6 show an example of a manufacturing method of the micromirror element X 1 .
  • This method is one method of manufacturing the micromirror element X 1 by means of bulk micromachining technology.
  • FIG. 6D of FIGS. 5 and 6 the formation processes of a mirror supporting portion M, arm section AR, frames F 1 , F 2 , torsion bars T 1 , T 2 , and a set of comb-tooth electrodes E 1 , E 2 are shown as a modification of a single cross section.
  • This single cross section is illustrated as a continuous cross section produced by modeling the cross sections of a plurality of predetermined locations included in a single micromirror element formation section on a material substrate (a wafer having a multilayer structure) that is to be subjected to machining.
  • the mirror supporting portion M corresponds to a part of the mirror supporting portion 11 .
  • the arm section AR corresponds to the arm section 12 , and shows a transverse section of the arm section 12 .
  • the frames F 1 , F 2 correspond respectively to the frame 21 , and show a transverse section of the frame 21 .
  • the torsion bar T 1 corresponds to the torsion bars 22 a and shows a cross section in the extension direction of the torsion bars 22 a.
  • the torsion bar T 2 corresponds to the torsion bars 22 a, and shows a transverse section of the torsion bars 22 a.
  • the comb-tooth electrode E 1 corresponds to a part of the comb-tooth electrodes 13 A, 13 B, and shows a transverse section of the electrode teeth 13 a, 13 b.
  • the comb-tooth electrode E 2 corresponds to a part of the comb-tooth electrodes 23 A, 23 B, and shows a transverse section of the electrode teeth 23 a, 23 b.
  • the material substrate 100 is an SOI substrate having a laminated structure constituted of silicon layers 101 , 102 , and an insulation layer 103 provided between the silicon layers 101 , 102 .
  • the silicon layers 101 , 102 are constituted of a silicon material rendered conductive by means of impurity doping.
  • impurities p-type impurities such as B or n-type impurities such as P and Sb may be employed.
  • the insulation layer 103 is constituted of silicon oxide, for example.
  • the thickness of the silicon layer 101 is between 10 and 100 ⁇ m, for example, the thickness of the silicon layer 102 is between 50 and 500 ⁇ m, for example, and the thickness of the insulation layer 103 is between 0.3 and 3 ⁇ m, for example.
  • the mirror surface 11 a is formed on the silicon layer 101 .
  • first Cr (50 nm), and then Au (200 nm) are deposited on the silicon layer 101 using a sputtering method.
  • Etching processing is then implemented successively on these metal films via a predetermined mask so as to form a pattern of the mirror surface 11 a.
  • An aqueous solution of potassium iodide and iodine for example, may be used as an etching liquid for the Au, and an aqueous solution of ammonium ceric nitrate, for example, may be used as an etching liquid for the Cr.
  • an oxide film pattern 110 and a resist pattern 111 are formed on the silicon layer 101 , and an oxide film pattern 112 is formed on the silicon layer 102 .
  • the oxide film pattern 110 takes a pattern form which corresponds to the oscillation section 10 (mirror supporting portion M, arm section AR, comb-tooth electrode E 1 ) and the frame 21 (frames F 1 , F 2 ).
  • the resist pattern 111 takes a pattern form which corresponds to the two torsion bars 22 a (torsion bars T 1 , T 2 ).
  • the oxide film pattern 112 takes a pattern form which corresponds to the frame 21 (frames F 1 , F 2 ) and the comb-tooth electrodes 23 A, 23 B (comb-tooth electrode E 2 ).
  • etching processing to a predetermined depth is performed on the silicon layer 101 by means of DRIE (deep reactive ion etching) using the oxide film pattern 110 and the resist pattern 111 as a mask.
  • the predetermined depth corresponds to the thickness of the torsion bars T 1 , T 2 , and is 5 ⁇ m, for example.
  • DRIE deep reactive ion etching
  • favorable etching processing can be performed using a Bosch process in which etching and side wall protection are performed alternately.
  • the Bosch process may also be employed in subsequent DRIE processing.
  • the resist pattern 111 is peeled away by the action of a stripper.
  • AZ Remover 700 manufactured by Clariant Japan, for example, may be used as the stripper.
  • etching processing through DRIE is performed on the silicon layer 101 up to the insulation layer 103 , while preserving the torsion bars T 1 , T 2 , using the oxide film pattern 110 as a mask.
  • the oscillation section 10 mirror supporting portion M, arm section AR, comb-tooth electrode E 1
  • the two torsion bars 22 a tilt bars T 1 , T 2
  • a part of the frame 21 frames F 1 , F 2
  • etching processing through DRIE is performed on the silicon layer 102 up to the insulation layer 103 using the oxide film pattern 112 as a mask.
  • a part of the frame 21 (frames F 1 , F 2 ) and the comb-tooth electrodes 23 A, 23 B (comb-tooth electrode E 2 ) are molded.
  • the exposed locations of the insulation layer 103 and the oxide film patterns 110 , 112 are removed by etching.
  • Dry etching or wet etching may be employed as the etching method.
  • CF 4 or CHF 3 may be employed as an etching gas.
  • wet etching buffered hydrofluoric acid (BHF) containing hydrofluoric acid and ammonium fluoride, for example, may be used as an etching liquid.
  • the mirror supporting portion M, arm section AR, frames F 1 , F 2 , torsion bars T 1 , T 2 , and the set of comb-tooth electrodes E 1 , E 2 are molded, and thus the micromirror element X 1 can be manufactured.
  • the oscillation section 10 and mirror supporting portion 11 can be rotationally displaced on the oscillation axis A 1 by applying a predetermined potential as needed to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B.
  • the application of a potential to the comb-tooth electrodes 13 A, 13 B can be realized via the region of the frame 21 originating from the first silicon layer, the two torsion bars 22 a, and the arm section 12 .
  • the comb-tooth electrodes 13 A, 13 B are grounded, for example.
  • the application of a potential to the comb-tooth electrodes 23 A, 23 B can be realized via the region of the frame 21 originating from the second silicon layer.
  • the region of the frame 21 originating from the second silicon layer and the region of the frame 21 originating from the first silicon layer are separated electrically by the insulation layer (the insulation layer 103 described above, for example).
  • the oscillation section 10 and mirror supporting portion 11 perform an oscillating operation about the oscillation axis A 1 so as to be rotationally displaced to an angle at which the electrostatic attraction and the sum of the torsional resistance of the two torsion bars 22 a counterbalance one another.
  • the comb-tooth electrodes 13 A, 23 A* are oriented as shown in FIG. 7 , for example, and the comb-tooth electrodes 13 B, 23 B are oriented similarly.
  • the amount of rotary displacement occurring during this oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B.
  • the torsion bars 22 a return to their natural state such that the oscillation section 10 and mirror supporting portion 11 return to the orientation shown in FIG. 3 .
  • the plurality of electrode teeth 13 a of the comb-tooth electrode 13 A are supported on the arm section 12 , which extends from the mirror supporting portion 11 , at intervals from each other in the extension direction of the arm section 12 , and the plurality of electrode teeth 23 a of the comb-tooth electrode 23 A are supported on the frame 21 at intervals from each other in the extension direction of the arm section 12 .
  • the plurality of electrode teeth 13 b of the comb-tooth electrode 13 B are supported on the arm section 12 , which extends from the mirror supporting portion 11 , at intervals from each other in the extension direction of the arm section 12 , and the plurality of electrode teeth 23 b of the comb-tooth electrode 23 B are supported on the frame 21 at intervals from each other in the extension direction of the arm section 12 .
  • These electrode teeth 13 a, 13 b, 23 a, 23 b are not supported directly on the mirror supporting portion 11 .
  • the number of electrode teeth 13 a, 23 a constituting the set of comb-tooth electrodes 13 A, 23 A and the number of electrode teeth 13 b, 23 b constituting the set of comb-tooth electrodes 13 B, 23 B are not restricted by the length of the mirror supporting portion 11 in the extension direction of the oscillation axis A 1 , which is orthogonal to the extension direction of the arm section 12 .
  • a desired number of the electrode teeth 13 a, 13 b, 23 a, 23 b can be provided regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction, and therefore a sufficient surface area to allow the electrode teeth 13 a, 23 a to face each other and a sufficient surface area to allow the electrode teeth 13 b, 23 b to face each other can be secured.
  • the micromirror element X 1 there is no need to reduce the width or increase the extension length of the electrode teeth 13 a, 23 a of the set of comb-tooth electrodes 13 A, 23 A to the extent that the mechanical strength of the electrode teeth 13 a, 23 a is adversely affected in order to secure a sufficient surface area to allow the electrode teeth 13 a, 23 a to face each other, for example, and there is also no need to reduce the gap between teeth to the extent that difficulties arise in the manufacturing process of the element.
  • the micromirror element X 1 is suitable for achieving miniaturization by reducing the design dimension of the mirror supporting portion 11 , and accordingly the entire element, in the oscillation axis A 1 direction while maintaining enough driving force to drive the oscillating operation of the oscillation section 10 by providing a desired number of the electrode teeth 13 a, 13 b, 23 a, 23 b, regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction.
  • FIG. 8 is a plan view of a first modified example of the micromirror element X 1 .
  • the electrode tooth 13 a positioned between two adjacent electrode teeth 23 a in the extension direction of the arm section 12 is offset toward the oscillation axis A 1 from a central position between the two electrode teeth 23 a, or the electrode tooth 23 a positioned between two adjacent electrode teeth 13 a in the extension direction of the arm section 12 is offset away from the oscillation axis A 1 from a central position between the two electrode teeth 13 a.
  • the electrode tooth 13 b positioned between two adjacent electrode teeth 23 b in the extension direction of the arm section 12 is offset toward the oscillation axis A 1 from a central position between the two electrode teeth 23 b, or the electrode tooth 23 b positioned between two adjacent electrode teeth 13 b in the extension direction of the arm section 12 is offset away from the oscillation axis A 1 from a central position between the two electrode teeth 13 b.
  • FIG. 9 is a plan view of a second modified example of the micromirror element X 1 .
  • the electrode tooth 13 a positioned between two adjacent electrode teeth 23 a in the extension direction of the arm section 12 is offset away from the oscillation axis A 1 from a central position between the two electrode teeth 23 a, or the electrode tooth 23 a positioned between two adjacent electrode teeth 13 a in the extension direction of the arm section 12 is offset toward the oscillation axis A 1 from a central position between the two electrode teeth 13 a.
  • the electrode tooth 13 b positioned between two adjacent electrode teeth 23 b in the extension direction of the arm section 12 is offset away from the oscillation axis A 1 from a central position between the two electrode teeth 23 b, or the electrode tooth 23 b positioned between two adjacent electrode teeth 13 b in the extension direction of the arm section 12 is offset toward the oscillation axis A 1 from a central position between the two electrode teeth 13 b.
  • the constitution of the first and second modified examples may be favorable for suppressing the occurrence of a so-called pull-in phenomenon during driving of the element in the set of comb-tooth electrodes 13 A and 23 A, and the set of comb-tooth electrodes 13 B and 23 B.
  • a desired electrostatic attraction is generated between the comb-tooth electrodes 13 A and 23 A and between the comb-tooth electrodes 13 B and 23 B.
  • the comb-tooth electrode 13 A is attracted toward the comb-tooth electrode 23 A and the comb-tooth electrode 13 B is attracted toward the comb-tooth electrode 23 B.
  • the distance between one electrode tooth 13 a and the electrode tooth 23 a adjacent to the electrode tooth 13 a on the outside of the electrode tooth 13 a in relation to the oscillation axis A 1 may be shorter or longer than the distance between this electrode tooth 13 a and the other adjacent electrode tooth 23 a on the inside of the electrode tooth 13 a in relation to the oscillation axis A 1 , depending on the position of the oscillation axis A 1 in the element thickness direction H.
  • the electrostatic attraction (first electrostatic attraction) between the electrode tooth 13 a and the outside electrode tooth 23 a tends to be greater than the electrostatic attraction (second electrostatic attraction) between the electrode tooth 13 a and the inside electrode tooth 23 a.
  • first electrostatic attraction is greater than the second electrostatic attraction by a predetermined degree or more
  • the electrode tooth 13 a and the outside electrode tooth 23 a are attracted incorrectly, and hence the pull-in phenomenon is likely to occur.
  • the second electrostatic attraction is greater than the first electrostatic attraction by a predetermined degree or more, the electrode tooth 13 a and the inside electrode tooth 23 a are attracted incorrectly, and hence the pull-in phenomenon is likely to occur.
  • the pull-in phenomenon may occur in the comb-tooth electrodes 13 B and 23 B.
  • the pull-in phenomenon is undesirable since it damages the oscillating characteristic of the element.
  • the electrode tooth 13 a positioned between two adjacent electrode teeth 23 a in the extension direction of the arm section 12 is offset from a central position between the two electrodes 23 a toward the inside or outside electrode tooth 23 a when the oscillation section 10 has not been rotationally displaced, it is possible to substantially equalize the distance between the electrode tooth 13 a and the outside electrode tooth 23 a and the distance between the electrode tooth 13 a and the inside electrode tooth 23 a, when the oscillation section 10 is rotationally displaced such that the comb-tooth electrode 13 A is attracted toward the comb-tooth electrodes 23 A, 23 B, by setting the amount of electrode tooth offset appropriately in accordance with the position of the oscillation axis A 1 in the element thickness direction H.
  • FIG. 10 is a plan view of a third modified example of the micromirror element X 1 .
  • the dimension of the arm section 12 and the dimension of the frame 21 in the extension direction of the arm section 12 are increased, and the distance between two adjacent electrode teeth 13 a, the distance between two adjacent electrode teeth 13 b, the distance between two adjacent electrode teeth 23 a, and the distance between two adjacent electrode teeth 23 b are lengthened steadily away from the oscillation axis A 1 .
  • FIG. 11 is a plan view of a fourth modified example of the micromirror element X 1 .
  • the extension direction of the plurality of electrode teeth 13 a, 13 b of the comb-tooth electrodes 13 A, 13 B and the extension direction of the plurality of electrode teeth 23 a, 23 b of the comb-tooth electrodes 23 A, 23 B are not orthogonal to the extension direction of the arm section 12 .
  • the extension directions of the electrode teeth 13 a, 23 a are parallel to one another
  • the extension directions of the electrode teeth 13 b, 23 b are parallel to one another.
  • An acute angle formed by the extension direction of the electrode teeth 13 a, 13 b, 23 a, 23 b and the extension direction of the arm section 12 is 45°, for example.
  • the micromirror element X 1 may be provided with the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B constituted in this manner.
  • FIG. 12 is a plan view of a fifth modified example of the micromirror element X 1 .
  • the two side faces of the electrode teeth 13 a, 13 b are non-perpendicular to the side face of the arm section 12 , and the width of the electrode teeth 13 a, 13 b decreases steadily away from the arm section 12 .
  • the two side faces of the electrode teeth 23 a, 23 b are non-perpendicular to the side face of the frame 21 , and the width of the electrode teeth 23 a, 23 b decreases steadily away from the frame 21 .
  • This constitution is favorable in that when the oscillation section 10 is rotationally displaced during driving of the element such that the comb-tooth electrodes 13 A and 13 B are attracted toward the comb-tooth electrodes 23 A and 23 B respectively, the electrode teeth 13 a and 23 a and the electrode teeth 13 b and 23 b can be prevented from coming into excessively close proximity.
  • the electrode teeth 13 a and 23 a from coming into excessively close proximity during driving of the element, occurrence of the pull-in phenomenon in the comb-tooth electrodes 13 A and 23 A can be suppressed during driving of the element.
  • occurrence of the pull-in phenomenon in the comb-tooth electrodes 13 B, 23 B can be suppressed during driving of the element.
  • FIG. 13 is a plan view of a sixth modified example of the micromirror element X 1 .
  • the side face of the electrode teeth 13 a, 13 b facing the mirror supporting portion 11 side is perpendicular to the side face of the arm section 12
  • the other side face of the electrode teeth 13 a, 13 b is non-perpendicular to the side face of the arm section 12
  • the width of the electrode teeth 13 a, 13 b decreases steadily away from the arm section 12 .
  • the side face of the electrode teeth 23 a, 23 b facing the mirror supporting portion 11 side is non-perpendicular to the side face of the frame 21
  • the other side face of the electrode teeth 23 a, 23 b is perpendicular to the side face of the frame 21
  • the width of the electrode teeth 23 a, 23 b decreases steadily away from the frame 21 .
  • This constitution is favorable in that when the oscillation section 10 is rotationally displaced during driving of the element to attract the comb-tooth electrodes 13 A and 13 B toward the comb-tooth electrodes 23 A and 23 B respectively, in particular the electrode teeth 13 a and their outside electrode teeth 23 a, and the electrode teeth 13 b and their outside electrode teeth 23 b, can be prevented from coming into excessively close proximity.
  • FIG. 14 is a sectional view, corresponding to the line III-III in FIG. 1 , of a seventh modified example of the micromirror element X 1 .
  • the standing direction of the electrode teeth 13 a when the oscillation section 10 is inoperative is inclined in relation to the element thickness direction H. More specifically, the electrode teeth 13 a are inclined so as to move steadily closer to the mirror supporting portion 11 as they approach the electrode teeth 23 a. Further, the electrode teeth 23 a are inclined so as to move steadily further away from the mirror supporting portion 11 as they approach the electrode teeth 13 a.
  • the electrode teeth 13 b, 23 b are inclined in a similar fashion to the electrode teeth 13 a, 23 a.
  • the orientation of the comb-tooth electrode 13 A to the comb-tooth electrode 23 A in case of the oscillation section 10 is inoperative differs from the orientation of the comb-tooth electrode 13 A to the comb-tooth electrode 23 A in case of the oscillation section 10 is rotationally displaced such that the comb-tooth electrode 13 A is attracted toward the comb-tooth electrode 23 A.
  • this variation in orientation is comparatively large.
  • the comb-tooth electrodes 13 A and 23 A of this modified example comprise the electrode teeth 13 a and 23 a, which are pre-inclined in the direction in which the electrode teeth 13 a incline when the comb-tooth electrode 13 A is attracted toward the comb-tooth electrode 23 A, and hence variation in the orientation between operative and inoperative periods is comparatively small.
  • the comb-tooth electrodes 13 B and 23 B of this modified example comprise the electrode teeth 13 b and 23 b, which are pre-inclined in the direction in which the electrode teeth 13 b incline when the comb-tooth electrode 13 B is attracted toward the comb-tooth electrode 23 B, and hence variation in the orientation between operative and inoperative periods is comparatively small.
  • FIGS. 15 to 18 show a micromirror element X 2 pertaining to a second embodiment of the present invention.
  • FIG. 15 is a plan view of the micromirror element X 2
  • FIG. 16 is a partial plan view of the micromirror element X 2
  • FIGS. 17 and 18 are sectional views along a line XVII-XVII and a line XVIII-XVIII of FIG. 15 , respectively.
  • the micromirror element X 2 comprises an oscillation section 10 , a frame 24 , a torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B.
  • the micromirror element X 2 differs from the micromirror element X 1 in comprising the frame 24 instead of the frame 21 .
  • the micromirror element X 2 is manufactured by machining a material substrate, which is an SOI substrate, using the MEMS technology described above in relation to the micromirror element X 1 .
  • the material substrate has a laminated structure comprising a first silicon layer, a second silicon layer, and an insulation layer between the silicon layers, each silicon layer being provided with a predetermined conductivity by means of impurity doping.
  • FIG. 15 the regions originating from the first silicon layer which protrude toward the paper surface from the insulation layer are illustrated with diagonal shading.
  • FIG. 16 shows the constitutions of the micromirror element X 2 originating from the second silicon layer.
  • the frame 24 mainly originates from the first and second silicon layers, and takes a form which surrounds the oscillation section 10 . As shown in FIG. 16 , the region of the frame 24 originating from the second silicon layer is divided structurally into a first region 24 a and a second region 24 b. In this embodiment, the first region 24 a and second region 24 b are also separated electrically.
  • the torsional joining section 22 is constituted of a pair of torsion bars 22 a formed on the first silicon layer.
  • the torsion bars 22 a are connected to the arm section 12 of the oscillation section 10 and the regions of frame 24 which originate from the first silicon layer, thereby linking these components. Further, as shown in FIG. 17 , the torsion bars 22 a are thinner than the arm section 12 and the region of the frame 24 * originating from the first silicon layer in the element thickness direction H.
  • the comb-tooth electrode 23 A is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 A of the oscillation section 10 , and is constituted of a plurality of electrode teeth 23 a which extend respectively from the frame 24 at intervals in the extension direction of the arm section 12 .
  • the electrode teeth 23 a originate mainly on the second silicon layer, and are fixed to the first region 24 a of the frame 24 as shown in FIG. 16 .
  • the comb-tooth electrode 23 A constitutes a driving mechanism together with the comb-tooth electrode 13 A.
  • the comb-tooth electrode 23 B is a site for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 B, and is constituted of a plurality of electrode teeth 23 b extending from the frame 24 .
  • the electrode teeth 23 b originate mainly on the second silicon layer, and are fixed to the second region 24 b of the frame 24 as shown in FIG. 16 .
  • the second region 24 b of the frame 24 is separated from the first region 24 a both structurally and electrically, and therefore the comb-tooth electrode 23 B and its electrode teeth 23 b are separated electrically from the comb-tooth electrode 23 A and its electrode teeth 23 a, which are fixed to the first region 24 a.
  • the comb-tooth electrode 23 B constitutes a driving mechanism together with the comb-tooth electrode 13 B.
  • the constitution of the oscillation section 10 , the remaining constitutions of the torsional joining section 22 , and the remaining constitutions of the comb-tooth electrodes 23 A, 23 B in the micromirror element X 2 are identical to those described above in relation to the oscillation section 10 , torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B of the first embodiment.
  • the oscillation section 10 and mirror supporting portion 11 can be rotationally displaced about the oscillation axis A 1 by applying a predetermined potential to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B as necessary.
  • the application of a potential to the comb-tooth electrodes 13 A, 13 B can be realized via the region of the frame 24 originating from the first silicon layer, the two torsion bars 22 a, and the arm section 12 .
  • the comb-tooth electrodes 13 A, 13 B are grounded, for example.
  • the application of a potential to the comb-tooth electrodes 23 A, 23 B can be realized via the first region 24 a and second region 24 b of the frame 24 .
  • the amount of rotary displacement occurring during the oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B.
  • the oscillation section 10 and mirror supporting portion 11 By driving the oscillation section 10 and mirror supporting portion 11 to tilt in this manner, the reflection direction of the light that is reflected on the mirror surface 11 a provided on the mirror supporting portion 11 can be switched arbitrarily.
  • the electrostatic attraction generated between the comb-tooth electrodes 13 A and 23 A and the electrostatic attraction generated between the comb-tooth electrodes 13 B and 23 B can be caused to differ by making the potential that is applied to the comb-tooth electrode 23 A and the potential that is applied to the comb-tooth electrode 23 B different.
  • the amount of rotary displacement of the oscillation section 10 and mirror supporting portion 11 other than their rotary displacement about the rotary axis A 1 can be controlled.
  • the amount of rotary displacement of the oscillation section 10 and mirror supporting portion 11 about an axis (an axis A 1 ′ shown in FIG. 18 , for example) which intersects the rotary axis A 1 can be regulated.
  • the attitude of the oscillation section 10 and mirror supporting portion 11 can be controlled such that the mirror surface 11 a is always parallel to the rotary axis A 1 .
  • This attitude regulating mechanism is favorable for realizing a high-precision light reflecting function.
  • the number of electrode teeth 13 a and 23 a constituting the set of comb-tooth electrodes 13 A and 23 A and the number of electrode teeth 13 b and 23 b constituting the set of comb-tooth electrodes 13 B and 23 B are not restricted by the length of the mirror supporting portion 11 in the extension direction of the oscillation axis A 1 , which is orthogonal to the extension direction of the arm section 12 .
  • a sufficient surface area to allow the electrode teeth 13 a and 23 a to face each other and a sufficient surface area to allow the electrode teeth 13 b and 23 b to face each other can be secured by providing a desired number of the electrode teeth 13 a, 13 b, 23 a, and 23 b, regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction.
  • the micromirror element X 2 is suitable for achieving miniaturization by reducing the design dimension of the mirror supporting portion 11 , and accordingly the entire element, in the oscillation axis A 1 direction while maintaining enough driving force to drive the oscillating operation of the oscillation section 10 by providing a desired number of the electrode teeth 13 a, 13 b, 23 a, and 23 b, regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction.
  • FIGS. 19 to 23 show a micromirror element X 3 according to a third embodiment of the present invention.
  • FIG. 19 is a plan view of the micromirror element X 3
  • FIG. 20 is a partial plan view of the micromirror element X 3
  • FIGS. 21 to 23 are sectional views along a line XXI-XXI, a line XXII-XXII, and a line XXIII-XXIII in FIG. 19 , respectively.
  • the micromirror element X 3 comprises an oscillation section 10 ′, a frame 25 , a torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B.
  • the micromirror element X 3 differs from the micromirror element X 1 in comprising the oscillation section 10 ′ in place of the oscillation section 10 , and in comprising the frame 25 in place of the frame 21 .
  • the micromirror element X 3 is manufactured by machining a material substrate, which is an SOI substrate, using the MEMS technology described above in relation to the micromirror element X 1 .
  • the material substrate has a laminated structure comprising a first silicon layer, a second silicon layer, and an insulation layer between the silicon layers, each silicon layer being provided with a predetermined conductivity by means of impurity doping.
  • FIG. 19 the regions originating from the first silicon layer which protrude toward the paper surface from the insulation layer are illustrated with diagonal shading.
  • FIG. 20 shows the constitutions of the micromirror element X 3 which originate from the second silicon layer.
  • the oscillation section 10 ′ comprises a mirror supporting portion 11 , arm sections 14 , 15 , and comb-tooth electrodes 13 A, 13 B, and therefore differs from the oscillation section 10 in comprising the arm sections 14 , 15 in place of the arm section 12 .
  • the arm section 14 comprises a main portion 14 a formed mainly on the first silicon layer, and a base portion 14 b formed mainly on the second silicon layer, and extends from the mirror supporting portion 11 .
  • the main portion 14 a of the arm section 14 is connected to the mirror supporting portion 11 via the base portion 14 b.
  • the arm section 15 originates mainly on the first silicon layer, and extends from the mirror supporting portion 11 in the same direction as the arm section 14 . Further, the arm section 15 is separated structurally from the arm section 14 . In this embodiment, the arm section 15 is also separated electrically from the main portion 14 a of the arm section 14 . The distance by which the arm section 15 is separated from the arm section 14 is between 15 and 50 ⁇ m, for example.
  • the comb-tooth electrode 13 A is constituted of a plurality of electrode teeth 13 a.
  • the plurality of electrode teeth 13 a extend individually from the main portion 14 a of the arm section 14 at intervals from each other in the extension direction of the arm section 14 .
  • the comb-tooth electrode 13 B is constituted of a plurality of electrode teeth 13 b.
  • the plurality of electrode teeth 13 b extend from the arm section 15 on the opposite side to the electrode teeth 13 a at intervals from each other in the extension direction of the arm section 15 .
  • the electrode teeth 13 a, 13 b originate mainly on the first silicon layer. In this embodiment, as shown in FIG.
  • the extension direction of the electrode teeth 13 a is orthogonal to the extension direction of the arm section 14
  • the extension direction of the electrode teeth 13 b is orthogonal to the extension direction of the arm section 15 . Since the main portion 14 a of the arm section 14 is separated electrically from the arm section 15 , the comb-tooth electrode 13 A and its electrode teeth 13 a, which are fixed to the main portion 14 a, are separated electrically from the comb-tooth electrode 13 B and its electrode teeth 13 b, which are fixed to the arm section 15 .
  • the constitution of the mirror supporting portion 11 in the oscillation section 10 ′ and the remaining constitutions of the comb-tooth electrodes 13 A, 13 B are identical to those described above in relation to the mirror supporting portion 11 and comb-tooth electrodes 13 A, 13 B of the first embodiment.
  • the frame 25 originates mainly on the first and second silicon layers, and takes a form surrounding the oscillation section 10 ′. As shown in FIGS. 19 and 23 , the region of the frame 25 originating from the first silicon layer is separated structurally into a first region 25 a and a second region 25 b. In this embodiment, the first region 25 a and second region 25 b are also separated electrically.
  • the torsional joining section 22 is constituted of a pair of torsion bars 22 a formed on the first silicon layer.
  • One of the torsion bars 22 a is connected to the main portion 14 a of the arm section 14 of the oscillation section 10 ′ and the first region 25 a of the frame 25 , thereby linking these components.
  • this torsion bar 22 a the first region 25 a and main portion 14 a are electrically connected.
  • this torsion bar 22 a is thinner than the main portion 14 a and the first region 25 a in the element thickness direction H.
  • the other torsion bar 22 a is connected to the arm section 15 of the oscillation section 10 ′ and the second region 25 b of the frame 25 , thereby linking these components.
  • this torsion bar 22 a the second region 25 b and the arm section 15 are electrically connected. Further, this torsion bar 22 a is thinner than the arm section 15 and the second region 25 b in the element thickness direction H.
  • the comb-tooth electrode 23 A is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 A of the oscillation section 10 ′, and is constituted of a plurality of electrode teeth 23 a.
  • the plurality of electrode teeth 23 a extend respectively from the frame 25 at intervals from each other in the extension direction of the arm section 14 .
  • the electrode teeth 23 a originate mainly on the second silicon layer, and are fixed to the region of the frame 25 originating from the second silicon layer, as shown in FIG. 20 .
  • the comb-tooth electrode 23 A constitutes a driving mechanism together with the comb-tooth electrode 13 A.
  • the comb-tooth electrode 23 B is a site for generating electrostatic attraction in cooperation with the comb-tooth electrode 13 B, and is constituted of a plurality of electrode teeth 23 b.
  • the plurality of electrode teeth 23 b extend respectively from the frame 25 at intervals from each other in the extension direction of the arm section 15 .
  • the electrode teeth 23 b originate mainly on the second silicon layer, and are fixed to the region of the frame 25 originating from the second silicon layer, as shown in FIG. 20 .
  • the comb-tooth electrode 23 B is connected electrically to the comb-tooth electrode 23 A via the region of the frame 25 originating from the second silicon layer.
  • the comb-tooth electrode 23 B constitutes a driving mechanism together with the comb-tooth electrode 13 B.
  • the remaining constitutions of the torsional joining section 22 and the remaining constitutions of the comb-tooth electrodes 23 A, 23 B in the micromirror element X 3 are identical to those described above in relation to the torsional joining section 22 and comb-tooth electrodes 23 A, 23 B of the first embodiment.
  • the oscillation section 10 ′ and mirror supporting portion 11 can be rotationally displaced about the oscillation axis A 1 by applying a predetermined potential to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B as necessary.
  • the application of a potential to the comb-tooth electrode 13 A can be realized via the first region 25 a of the frame 25 , one of the torsion bars 22 a, and the main portion 14 a of the arm section 14 .
  • the application of a potential to the comb-tooth electrode 13 B can be realized via the second region 25 b of the frame 25 , the other torsion bar 22 a, and the arm section 15 .
  • the application of a potential to the comb-tooth electrodes 23 A, 23 B can be realized via the region of the frame 25 originating from the second silicon layer.
  • the comb-tooth electrodes 23 A, 23 B are grounded, for example.
  • the region of the frame 25 originating from the second silicon layer and the region of the frame 25 originating from the first silicon layer (the first region 25 a and second region 25 b ) are separated electrically by the insulation layer.
  • the amount of rotary displacement occurring during the oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B.
  • the electrostatic attraction generated between the comb-tooth electrodes 13 A and 23 A and the electrostatic attraction generated between the comb-tooth electrodes 13 B and 23 B can be caused to differ by making the potential that is applied to the comb-tooth electrode 13 A and the potential that is applied to the comb-tooth electrode 13 B different.
  • the amount of rotary displacement of the oscillation section 10 ′ and mirror supporting portion 11 other than their rotary displacement about the rotary axis A 1 can be controlled.
  • the amount of rotary displacement of the oscillation section 10 ′ and mirror supporting portion 11 about an axis an axis (an axis A 1 ′ shown in FIG.
  • attitude of the oscillation section 10 ′ and mirror supporting portion 11 can be controlled such that the mirror surface 11 a is always parallel to the rotary axis A 1 .
  • This attitude regulating mechanism is favorable for realizing a high-precision light reflecting function.
  • the micromirror element X 3 is suitable for achieving miniaturization by reducing the design dimension of the mirror supporting portion 11 , and accordingly the entire element, in the oscillation axis A 1 direction while maintaining enough driving force to drive the oscillating operation of the oscillation section 10 ′ by providing a desired number of the electrode teeth 13 a, 13 b, 23 a, and 23 b, regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction.
  • FIGS. 24 and 25 show a micromirror element X 4 according to a fourth embodiment of the present invention.
  • FIG. 24 is a plan view of the micromirror element X 4
  • FIG. 25 is a sectional view along a line XXV-XXV in FIG. 24 .
  • the micromirror element X 4 comprises an oscillation section 30 , a frame 41 , a torsional joining section 42 , and comb-tooth electrodes 43 A, 43 B, 44 A, 44 B. Further, the micromirror element X 4 is manufactured by machining a material substrate, which is an SOI substrate, using the MEMS technology described above in relation to the micromirror element X 1 .
  • the material substrate has a laminated structure comprising a first silicon layer, a second silicon layer, and an insulation layer between the silicon layers, each silicon layer being provided with a predetermined conductivity by means of impurity doping. To facilitate understanding of the drawing, in FIG. 24 the regions originating from the first silicon layer which protrude toward the paper surface from the insulation layer are illustrated with diagonal shading.
  • the oscillation section 30 comprises a mirror supporting portion 31 , arm sections 32 , 33 , and comb-tooth electrodes 34 A, 34 B, 35 A, 35 B.
  • the mirror supporting portion 31 originates mainly on the first silicon layer, and is provided on its surface with a mirror surface 31 a having a light reflecting function.
  • the mirror supporting portion 31 and mirror surface 31 a constitute the movable functional section of the present invention.
  • the arm section 32 originates mainly on the first silicon layer, and extends from the mirror supporting portion 31 .
  • the arm section 33 originates mainly on the first silicon layer, and extends from the mirror supporting portion 31 on the opposite side to the arm section 32 .
  • the extension direction of the arm section 32 matches the extension direction of the arm section 33 .
  • the comb-tooth electrode 34 A is constituted of a plurality of electrode teeth 34 a.
  • the plurality of electrode teeth 34 a extend respectively from the arm section 32 at intervals from each other in the extension direction of the arm section 32 .
  • the comb-tooth electrode 34 B is constituted of a plurality of electrode teeth 34 b.
  • the plurality of electrode teeth 34 b extend respectively from the arm section 32 on the opposite side to the electrode teeth 34 a, at intervals from each other in the extension direction of the arm section 32 .
  • the electrode teeth 34 a, 34 b originate mainly on the first silicon layer.
  • the extension direction of the electrode teeth 34 a, 34 b is orthogonal to the extension direction of the arm section 32 .
  • the comb-tooth electrode 34 A and its electrode teeth 34 a are connected electrically to the comb-tooth electrode 34 B and its electrode teeth 34 b via the arm section 32 .
  • the comb-tooth electrode 35 A is constituted of a plurality of electrode teeth 35 a.
  • the plurality of electrode teeth 35 a extend respectively from the arm section 33 at intervals from each other in the extension direction of the arm section 33 .
  • the comb-tooth electrode 35 B is constituted of a plurality of electrode teeth 35 b.
  • the plurality of electrode teeth 35 b extend respectively from the arm section 33 on the opposite side to the electrode teeth 35 a, at intervals from each other in the extension direction of the arm section 33 .
  • the electrode teeth 35 a, 35 b originate mainly on the first silicon layer.
  • the extension direction of the electrode teeth 35 a, 35 b is orthogonal to the extension direction of the arm section 33 .
  • the frame 41 originates mainly on the first and second silicon layers, and takes a form which surrounds the oscillation section 30 . Further, the frame 41 has a predetermined mechanical strength so as to support the structure within the frame 41 .
  • the torsional joining section 42 is constituted of a pair of torsion bars 42 a.
  • the torsion bars 42 a originate mainly on the first silicon layer, and are connected to the mirror supporting portion 31 of the oscillation section 30 and the region of the frame 41 which originates from the first silicon layer, thereby linking these components.
  • the region of the frame 41 originating from the first silicon layer and the mirror supporting portion 31 are electrically connected by the torsion bars 42 a.
  • the torsion bars 42 a are thinner than the mirror supporting portion 31 and the region of the frame 41 originating from the first silicon layer in the element thickness direction H.
  • the torsional joining section 42 constituted of the pair of torsion bars 42 a defines an oscillation axis A 4 for the oscillating operation of the oscillation section 30 and mirror supporting portion 31 .
  • the oscillation axis A 4 is orthogonal to a direction D shown by the arrow in FIG. 24 , or in other words the extension direction of the arm sections 32 , 33 .
  • the extension direction of the electrode teeth 34 a, 34 b described above, which extend from the arm section 32 in an orthogonal direction to the extension direction of the arm section 32 is parallel to the oscillation axis A 4
  • the extension direction of the electrode teeth 35 a, 35 b described above, which extend from the arm section 33 in an orthogonal direction to the extension direction of the arm section 33 is parallel to the oscillation axis A 4
  • the oscillation axis A 4 preferably passes through or close to the center of gravity of the oscillation section 30 .
  • the comb-tooth electrode 43 A is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 34 A, and is constituted of a plurality of electrode teeth 43 a.
  • the plurality of electrode teeth 43 a extend respectively from the frame 41 at intervals in the extension direction of the arm section 32 .
  • the electrode teeth 43 a originate mainly on the second silicon layer, and are fixed to the region of the frame 41 originating from the second silicon layer.
  • the extension direction of the electrode teeth 43 a is orthogonal to the extension direction of the arm section 32
  • the extension direction of the electrode teeth 43 a is parallel to the oscillation axis A 4 .
  • the comb-tooth electrode 43 A constitutes a driving mechanism together with the comb-tooth electrode 34 A. As shown in FIG. 25 , the comb-tooth electrodes 34 A, 43 A are positioned at different heights to each other when the oscillation section 30 is inoperative, for example. Furthermore, the electrode teeth 34 a, 43 a are offset from each other so that the comb-tooth electrodes 34 A, 43 A do not come into contact with each other during the oscillating operation of the oscillation section 30 .
  • the comb-tooth electrode 43 B is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 34 B, and is constituted of a plurality of electrode teeth 43 b.
  • the plurality of electrode teeth 43 b extend respectively from the frame 41 at intervals in the extension direction of the arm section 32 .
  • the electrode teeth 43 b originate mainly on the second silicon layer, and are fixed to the region of the frame 41 originating from the second silicon layer.
  • the comb-tooth electrode 43 B and its electrode teeth 43 b are connected electrically to the comb-tooth electrode 43 A and its electrode teeth 43 a via a part of the region of the frame 41 originating from the second silicon layer.
  • the extension direction of the electrode teeth 43 b is orthogonal to the extension direction of the arm section 32
  • the extension direction of the electrode teeth 43 b is parallel to the oscillation axis A 4 .
  • the comb-tooth electrode 43 B constitutes a driving mechanism together with the comb-tooth electrode 34 B.
  • the comb-tooth electrodes 34 B, 43 B are positioned at different heights to each other when the oscillation section 30 is inoperative, for example. Furthermore, the electrode teeth 34 b, 43 b are offset from each other so that the comb-tooth electrodes 34 B, 43 B do not come into contact with each other during the oscillating operation of the oscillation section 30 .
  • the comb-tooth electrode 44 A is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 35 A, and is constituted of a plurality of electrode teeth 44 a.
  • the plurality of electrode teeth 44 a extend respectively from the frame 41 at intervals in the extension direction of the arm section 33 .
  • the electrode teeth 44 a originate mainly on the second silicon layer, and are fixed to the region of the frame 41 originating from the second silicon layer.
  • the fixing locations of the electrode teeth 44 a in the region of the frame 41 originating from the second silicon layer are separated electrically from the fixing locations of the aforementioned electrode teeth 43 a, 43 b in the region of the frame 41 originating from the second silicon layer.
  • the comb-tooth electrode 44 A and its electrode teeth 44 a are separated electrically from the comb-tooth electrodes 43 A, 43 B and their electrode teeth 43 a, 43 b.
  • the extension direction of the electrode teeth 44 a is orthogonal to the extension direction of the arm section 33 , and the extension direction of the electrode teeth 44 a is parallel to the oscillation axis A 4 .
  • This comb-tooth electrode 44 A constitutes a driving mechanism together with the comb-tooth electrode 35 A.
  • the comb-tooth electrodes 35 A, 44 A are positioned at different heights to each other when the oscillation section 30 is inoperative, for example.
  • the electrode teeth 35 a, 44 a are offset from each other so that the comb-tooth electrodes 35 A, 44 A do not come into contact with each other during the oscillating operation of the oscillation section 30 .
  • the comb-tooth electrode 44 B is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 35 B, and is constituted of a plurality of electrode teeth 44 b.
  • the plurality of electrode teeth 44 b extend respectively from the frame 41 at intervals in the extension direction of the arm section 33 .
  • the electrode teeth 44 b originate mainly on the second silicon layer, and are fixed to a part of the region of the frame 41 originating from the second silicon layer.
  • the fixing locations of the electrode teeth 44 b in the region of the frame 41 originating from the second silicon layer are separated electrically from the fixing locations of the aforementioned electrode teeth 43 a, 43 b in the region of the frame 41 originating from the second silicon layer.
  • the comb-tooth electrode 44 B and its electrode teeth 44 b are separated electrically from the comb-tooth electrodes 43 A, 43 B and their electrode teeth 43 a, 43 b.
  • the comb-tooth electrode 44 B and its electrode teeth 44 b are connected electrically to the comb-tooth electrode 44 A and its electrode teeth 44 a via a part of the region of the frame 41 originating from the second silicon layer.
  • the extension direction of the electrode teeth 44 b is orthogonal to the extension direction of the arm section 33
  • the extension direction of the electrode teeth 44 b is parallel to the oscillation axis A 4 .
  • This comb-tooth electrode 44 B constitutes a driving mechanism together with the comb-tooth electrode 35 B.
  • the comb-tooth electrodes 35 B, 44 B are positioned at different heights to each other when the oscillation section 30 is inoperative, for example. Furthermore, the electrode teeth 35 b, 44 b are offset from each other so that the comb-tooth electrodes 35 B, 44 B do not come into contact with each other during the oscillating operation of the oscillation section 30 .
  • the oscillation section 30 and mirror supporting portion 31 can be rotationally displaced about the oscillation axis A 4 by applying a predetermined potential to the comb-tooth electrodes 34 A, 34 B, 35 A, 35 B, 43 A, 43 B, 44 A, and 44 B as necessary.
  • the application of a potential to the comb-tooth electrodes 34 A, 34 B, 35 A, and 35 B can be realized via the region of the frame 41 originating from the first silicon layer, the two torsion bars 42 a, the mirror supporting portion 31 , and the arm sections 32 and 33 .
  • the comb-tooth electrodes 34 A, 34 B, 35 A, 35 B are grounded, for example.
  • the application of a potential to the comb-tooth electrodes 43 A and 43 B can be realized via a part of the region of the frame 41 originating from the second silicon layer.
  • the application of a potential to the comb-tooth electrodes 44 A and 44 B can be realized via another part of the region of the frame 41 originating from the second silicon layer.
  • the amount of rotary displacement occurring during the oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 34 A, 34 B, 35 A, 35 B, 43 A, 43 B, 44 A, and 44 B.
  • the micromirror element X 4 is suitable for achieving miniaturization by reducing the design dimension of the mirror supporting portion 31 , and accordingly the entire element, in the oscillation axis A 4 direction while maintaining enough driving force to drive the oscillating operation of the oscillation section 30 by providing a desired number of the electrode teeth 34 a, 34 b, 35 a, 35 b, 43 a, 43 b, 44 a, and 44 b, regardless of the design dimension of the mirror supporting portion 31 in the oscillation axis A 4 direction.
  • FIGS. 26 through 30 show a micromirror element X 5 according to a fifth embodiment of the present invention.
  • FIG. 26 is a plan view of the micromirror element X 5
  • FIG. 27 is a partial plan view of the micromirror element X 5 .
  • FIGS. 28 to 30 are sectional views along a line XXVIII-XXVIII, a line XXIX-XXIX, and a line XXX-XXX in FIG. 26 , respectively.
  • the micromirror element X 5 comprises an oscillation section 10 , a frame 21 , a torsional joining section 22 , comb-tooth electrodes 23 A, 23 B, a frame 51 (illustrated partially), arm sections 52 , 53 , a torsional joining section 54 , and comb-tooth electrodes 55 , 56 . Further, the micromirror element X 5 is manufactured by machining a material substrate, which is an SOI substrate, using the MEMS technology described above in relation to the micromirror element X 1 .
  • the material substrate has a laminated structure comprising a first silicon layer, a second silicon layer, and an insulation layer between the silicon layers, each silicon layer being provided with a predetermined conductivity by means of impurity doping. To facilitate understanding of the drawing, in FIG. 26 the regions originating from the first silicon layer which protrude toward the paper surface from the insulation layer are illustrated with diagonal shading.
  • FIG. 27 shows the constitutions of the micromirror element X 5 originating from the second
  • the oscillation section 10 , frame 21 , torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B of the micromirror element X 5 are similar to the oscillation section 10 , frame 21 , torsional joining section 22 , and comb-tooth electrodes 23 A, 23 B described above in the first embodiment.
  • the frame 51 originates mainly on the first and second silicon layers, and has a predetermined mechanical strength in order to support the structure within the frame 51 .
  • the region of the frame 51 originating from the second silicon layer is shown in FIG. 27 .
  • the arm section 52 originates mainly on the first silicon layer, and extends from the frame 21 in an orthogonal direction to the oscillation axis A 1 of the oscillation section 10 . Further, as shown in FIG. 28 , the arm section 52 is fixed to the region of the frame 21 originating from the first silicon layer.
  • the arm section 53 originates mainly on the second silicon layer, and extends from the frame 51 in an orthogonal direction to the oscillation axis A 1 of the oscillation section 10 and parallel to the arm section 52 . Further, as shown in FIG. 27 , the arm section 53 is fixed to the region of the frame 51 originating from the second silicon layer.
  • the torsional joining section 54 is constituted of a set of torsion bars 54 a, 54 b and a torsion bar 54 c.
  • the torsion bar 54 a originates mainly on the first silicon layer, and is connected to the region of the frame 21 originating from the first silicon layer and the region of the frame 51 originating from the first silicon layer, thereby linking these components.
  • the region of the frame 51 originating from the first silicon layer and the region of the frame 21 originating from the first silicon layer are connected electrically by the torsion bar 54 a.
  • the torsion bar 54 a is thinner than the region of the frame 21 originating from the first silicon layer and the region of the frame 51 originating from the first silicon layer in the element thickness direction H.
  • the torsion bar 54 b originates mainly on the second silicon layer, and is connected to the region of the frame 21 originating from the second silicon layer and the region of the frame 51 originating from the second silicon layer, thereby linking these components.
  • the region of the frame 51 originating from the second silicon layer and the region of the frame 21 originating from the second silicon layer are connected electrically by the torsion bar 54 b.
  • the fixing location of the torsion bar 54 b is separated electrically from the fixing location of the aforementioned arm section 53 .
  • the torsion bar 54 b is thinner than the region of the frame 21 originating from the second silicon layer and the region of the frame 51 originating from the second silicon layer in the element thickness direction H.
  • the torsion bar 54 c originates mainly on the first silicon layer, and is connected to the region of the frame 51 originating from the first silicon layer and the arm section 52 , thereby linking these components.
  • the region of the frame 51 originating from the first silicon layer and the arm section 52 are connected electrically by the torsion bar 54 c. Further, as shown in FIG. 28 , the torsion bar 54 c is thinner than the region of the frame 51 originating from the first silicon layer and the arm section 52 in the element thickness direction H.
  • the torsional joining section 54 (torsion bars 54 a, 54 b, 54 c ) defines an oscillation axis A 5 of the oscillating operation of the frame 21 .
  • the extension direction of the oscillation axis A 5 is orthogonal to the extension direction of the oscillation axis A 1 .
  • the oscillation axis A 5 preferably passes through or close to the center of gravity of the oscillation section 10 .
  • the comb-tooth electrode 55 is constituted of a plurality of electrode teeth 55 a.
  • the plurality of electrode teeth 55 a extend respectively from the arm section 52 at intervals from each other in the extension direction of the arm section 52 .
  • the electrode teeth 55 a originate mainly on the first silicon layer.
  • the comb-tooth electrode 56 is a region for generating electrostatic attraction in cooperation with the comb-tooth electrode 55 , and is constituted of a plurality of electrode teeth 56 a.
  • the plurality of electrode teeth 56 a extend respectively from the arm section 53 at intervals from each other in the extension direction of the arm section 53 .
  • the electrode teeth 56 a originate mainly on the second silicon layer.
  • the comb-tooth electrodes 55 , 56 constitute the driving mechanism of the element. As shown in FIGS. 28 and 30 , the comb-tooth electrodes 55 , 56 are positioned at different heights to each other when the frame 21 is inoperative, for example. Furthermore, the electrode teeth 55 a, 56 a are offset from each other so that the comb-tooth electrodes 55 , 56 do not come into contact with each other during the oscillating operation of the frame 21 .
  • the micromirror element X 5 by applying a predetermined potential as needed to the comb-tooth electrodes 13 A, 13 B, 23 A, 23 B, 55 , 56 , the oscillation section 10 and mirror supporting portion 11 can be driven to tilt about the oscillation axis A 1 , and moreover, the frame 21 , and accordingly the oscillation section 10 , can be driven to tilt about the oscillation axis A 5 .
  • the micromirror element X 5 is a so-called biaxial oscillating element.
  • the application of a potential to the comb-tooth electrodes 13 A, 13 B can be realized via the region of the frame 51 originating from the first silicon layer, the torsion bar 54 a, the region of the frame 21 originating from the first silicon layer, the two torsion bars 22 a, and the arm section 12 , or via the region of the frame 51 originating from the first silicon layer, the torsion bar 54 c, the arm section 52 , the region of the frame 21 originating from the first silicon layer, the two torsion bars 22 a, and the arm section 12 .
  • the application of a potential to the comb-tooth electrode 55 can be realized via the region of the frame 51 originating from the first silicon layer, the torsion bars 54 a, the region of the frame 21 originating from the first silicon layer, and the arm section 52 , or via the region of the frame 51 originating from the first silicon layer, the torsion bar 54 c, and the arm section 52 .
  • the comb-tooth electrodes 13 A, 13 B, 55 are grounded, for example.
  • the application of a potential to the comb-tooth electrodes 23 A, 23 B can be realized via the region of the frame 51 originating from the second region, the torsion bar 54 b, and the region of the frame 21 originating from the second silicon layer.
  • the application of a potential to the comb-tooth electrode 56 can be realized via the region of the frame 51 originating from the second silicon layer and the arm section 53 .
  • the amount of rotary displacement about the oscillation axis A 1 during the oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 13 A, 13 B, 23 A, and 23 B.
  • the amount of rotary displacement about the oscillation axis A 5 during the oscillating operation can be adjusted by regulating the potential that is applied to the comb-tooth electrodes 55 and 56 .
  • the reflection direction of the light that is reflected on the mirror surface 11 a provided on the mirror supporting portion 11 can be switched arbitrarily.
  • the micromirror element X 5 is suitable for achieving miniaturization by reducing the design dimension of the mirror supporting portion 11 , and accordingly the entire element, in the oscillation axis A 1 direction while maintaining enough driving force to drive the oscillating operation of the oscillation section 10 by providing a desired number of the electrode teeth 13 a, 13 b, 23 a, 23 b, 55 a, 56 a, regardless of the design dimension of the mirror supporting portion 11 in the oscillation axis A 1 direction.
  • FIG. 31 shows a micromirror array Y comprising a plurality of the micromirror elements X 5 .
  • the oscillation section 10 , frames 21 , 51 , arm section 52 , and comb-tooth electrode 55 are diagonally shaded.
  • the plurality of micromirror elements X 5 are arranged in series in the direction of the rotary axis A 1 .
  • the plurality of mirror surfaces 11 a are arranged in series in the direction of the rotary axis A 1 .
  • each micromirror element X 5 is suitable for achieving miniaturization by reducing the dimension of the entire element in the rotary axis A 1 direction, while obtaining a sufficient driving force. Therefore, according to the micromirror array Y, the plurality of mirror surfaces 11 a can be arranged at a narrow pitch. In other words, with the micromirror array Y, the plurality of mirror surfaces 11 a may be disposed at a high density in the oscillation axis A 1 direction. In addition, in each micromirror element X 5 , the mirror supporting portion 11 and torsion bars 22 a (torsional joining section 22 ) overlap in the rotary axis A 1 direction. Such a constitution is favorable for achieving a high density of the mirror surfaces 11 a in the oscillation axis A 1 direction.

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US20100231087A1 (en) 2010-09-16

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