US20050239953A1 - Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide - Google Patents

Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide Download PDF

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US20050239953A1
US20050239953A1 US11/167,032 US16703205A US2005239953A1 US 20050239953 A1 US20050239953 A1 US 20050239953A1 US 16703205 A US16703205 A US 16703205A US 2005239953 A1 US2005239953 A1 US 2005239953A1
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general formula
coating
atom
radiation curable
curable composition
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Haruaki Sakurai
Koichi Abe
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Publication of US20050239953A1 publication Critical patent/US20050239953A1/en
Priority to US12/422,760 priority Critical patent/US8034545B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Definitions

  • the present invention relates to a radiation curable composition, a storing method thereof, a forming method of a cured film, a patterning method, an use of a pattern, electronic components and an optical waveguide.
  • insulating films for use in LSIs and PDPs there have conventionally been used SiO 2 films formed by CVD methods, and organic SOG (Spin On Glass) or inorganic SOG films formed by coating methods, because of their excellent heat resistance and electrical reliability.
  • SiO 2 films formed by CVD methods and organic SOG (Spin On Glass) or inorganic SOG films formed by coating methods, because of their excellent heat resistance and electrical reliability.
  • organic SOG Spin On Glass
  • inorganic SOG films formed by coating methods because of their excellent heat resistance and electrical reliability.
  • imparting photosensitive properties to an insulating film material with excellent heat resistance, electrical reliability and transparency eliminates the need for the resist material required in the steps mentioned above, thereby allowing the plasma dry etching, chemical solution wet etching, resist removal and washing steps to be omitted.
  • the acid diffusion controller controls diffusion of the acid generated by the radiation, thereby allowing the pattern precision of the silane compound to be increased. Nevertheless, since the acid diffusion controller inactivates (neutralizes) the acid, the curing property is impaired in cases with a low amount of photoacid generator or a low exposure dose, thereby often leading to lower pattern precision. Conversely, increasing the exposure dose in an attempt to improve the patterning precision is clearly an unsuitable strategy for mass production.
  • the present invention was accomplished in light of the circumstances described above, and it provides a radiation curable composition which yields a cured product with excellent pattern precision even with a relatively low light exposure dose, a method for its storage, a forming method of a cured film and a patterning method, as well as an use of a pattern, electronic components and an optical waveguide which employ the above.
  • a radiation curable composition comprising specific components, a forming method of a cured film and a patterning method.
  • the present invention provides a radiation curable composition
  • a radiation curable composition comprising (a): a siloxane resin, (b): a photoacid generator or photobase generator, and (c): a solvent capable of dissolving component (a) and containing an aprotic solvent.
  • the invention further provides the aforementioned radiation curable composition
  • the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1): R 1 n SiX 4-n (1) wherein R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1 may be the same or different, and when n is 0-2, each X may be the same or different.
  • R 1 n SiX 4-n (1) wherein R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1 may be the same or different, and when n
  • the invention further provides the aforementioned radiation curable composition wherein the aprotic solvent is at least one solvent selected from the group consisting of ether-based solvents, ester-based solvents, ether acetate-based solvents and ketone-based solvents. These aprotic solvents are preferred from the standpoint of sensitivity and pattern precision during pattern formation, and mechanical strength of the cured film.
  • the invention still further provides the aforementioned radiation curable composition which further comprises component (d): a curing acceleration catalyst.
  • a curing acceleration catalyst is preferred because it can heighten the effect of reducing the amount of photoacid generator or photobase generator, the effect of reducing the exposure dose or the effect of lowering the PEB temperature.
  • the invention still further provides the aforementioned radiation curable composition wherein the curing acceleration catalyst is an onium salt.
  • An onium salt is preferred because it can improve the electrical properties and mechanical strength of the obtained cured film, while also increasing the stability of the composition.
  • the invention still further provides the aforementioned radiation curable composition wherein the curing acceleration catalyst is a quaternary ammonium salt.
  • the curing acceleration catalyst is a quaternary ammonium salt.
  • the invention still further provides a forming method of a cured film comprising steps of applying the aforementioned radiation curable composition onto a substrate and drying it to obtain a coating, and exposing the coating, without heating of the coating after the exposure step. According to this method, diffusion of the acid by heat and increased production costs are adequately minimized, while the pattern precision of the cured film is sufficiently high.
  • the invention still further provides a forming method of a cured film comprising steps of applying the aforementioned radiation curable composition onto a substrate and drying it to obtain a coating, exposing the coating, and heating the coating after the exposure step.
  • the invention still further provides a forming method of a cured film comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, and exposing the coating, without heating of the coating after the exposure step. According to this method, diffusion of the acid by heat and increased production costs are adequately minimized, while the pattern precision of the cured film is sufficiently high.
  • the invention still further provides a forming method of a cured film comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating, and heating the coating to 70-110° C. after the exposure step. This method allows greater inhibition of the diffusion of the acid during heating.
  • the invention still further provides a forming method of a cured film comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, and exposing the coating to irradiation of light at a dose of 5-100 mJ/cm 2 .
  • a light dose within this range will tend to facilitate control of exposure and improve the productivity.
  • the invention still further provides a forming method of a cured film comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating to irradiation of light at a dose of 5-100 mJ/cm 2 , and heating the coating to 70-110° C. after the exposure step.
  • the invention still further provides the aforementioned forming method of a cured film which employs a radiation curable composition comprising a siloxane resin, wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1): R 1 n SiX 4-n (1) wherein R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1 may be the same or different, and when n is 0-2, each X may be the same or different.
  • R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group
  • X represents a hydrolyzable group
  • n represents an integer of 0-2, with the proviso that when n
  • the invention still further provides a patterning method comprising steps of applying the aforementioned radiation curable composition onto a substrate and drying it to obtain a coating, exposing the coating via a mask and removing the unexposed sections of the coating after the exposure step by development, without heating of the coating after the exposure step.
  • a patterning method comprising steps of applying the aforementioned radiation curable composition onto a substrate and drying it to obtain a coating, exposing the coating via a mask and removing the unexposed sections of the coating after the exposure step by development, without heating of the coating after the exposure step.
  • diffusion of the acid by heat and increased production costs are adequately minimized, while the pattern precision of the cured film is sufficiently high.
  • the “heat” referred to here means heat at a stage prior to the removal step, and heating may also be carried out after the removal step.
  • the invention still further provides a patterning method comprising steps of applying the aforementioned radiation curable composition onto a substrate and drying it to obtain a coating, exposing the coating via a mask, heating the coating after the exposure step and removing the unexposed sections of the coating by development after the heating step.
  • the invention still further provides a patterning method comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating via a mask, and removing the unexposed sections of the coating by development, without heating of the coating after the exposure step.
  • a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating
  • exposing the coating via a mask removing the unexposed sections of the coating by development, without heating of the coating after the exposure step.
  • diffusion of the acid by heat and increased production costs are adequately minimized, while the pattern precision of the cured film is sufficiently high.
  • the “heat” referred to here means heat at a stage prior to the removal step, and heating may also be carried out after the removal step.
  • the invention still further provides a patterning method comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating via a mask, heating the coating to 70-110° C. after the exposure step, and removing the unexposed sections of the coating by development after the heating step.
  • This method allows greater inhibition of the diffusion of the acid during heating.
  • the invention still further provides a patterning method comprising a step of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating to irradiation of light at a dose of 5-100 mJ/cm 2 via a mask, and removing the unexposed sections of the coating by development.
  • a light dose within this range will tend to facilitate control of exposure and improve the productivity.
  • the invention still further provides a patterning method comprising steps of applying a radiation curable composition containing a siloxane resin onto a substrate and drying it to obtain a coating, exposing the coating to irradiation of light at a dose of 5-100 mJ/cm 2 via a mask, heating the coating to 70-110° C. after the exposure step, and removing the unexposed sections of the coating by development after the heating step.
  • the invention still further provides the aforementioned patterning method which employs a radiation curable composition comprising a siloxane resin, wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1): R 1 n SiX 4-n (1) wherein R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1 may be the same or different, and when n is 0-2, each X may be the same or different.
  • R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group
  • X represents a hydrolyzable group
  • n represents an integer of 0-2, with the proviso that when n is 2, each R 1 may
  • the invention still further provides the aforementioned patterning method wherein a tetramethylammonium hydroxide solution is used as the developing solution in the removal step.
  • This method can adequately inhibit contamination of electronic components by alkali metals during development.
  • the invention still further provides an use of a pattern wherein a pattern formed by the aforementioned patterning method is used as a resist mask.
  • the invention still further provides an electronic component possessing a pattern formed by the aforementioned patterning method.
  • the invention still further provides an optical waveguide possessing a pattern formed by the aforementioned patterning method.
  • the invention still further provides a storage method for the aforementioned radiation curable composition wherein the radiation curable composition is stored at a temperature of 0° C. or below. Storing the composition at a temperature of 0° C. or below will result in greater the storage stability than by storage at a temperature of above 0° C.
  • the radiation curable composition having this construction, the forming method of a cured film and patterning method using the radiation curable composition, and the storage method for the radiation curable composition allow formation of cured films with excellent pattern precision even using a relatively low exposure dose, thus overcoming the problem of the prior art whereby it has been impossible to achieve both low exposure dose and high pattern precision.
  • the improvement in pattern precision is assumed to result because the curing reaction of the radiation curable composition occurs before diffusion of the acid when an aprotic solvent is used as the curing acceleration solvent.
  • Addition of a curing acceleration catalyst as an additive also further improves the pattern precision. This is attributed to the fact that the curing reaction occurs at a more rapid timing.
  • This mechanism differs from the mechanism of the prior art, whereby the acid diffusion controller inactivates (neutralizes) the generated acid to improve the pattern precision. According to the invention, it is conjectured that both pattern precision improvement and exposure dose reduction can be achieved based on the aforementioned mechanism which is different from that of the prior art.
  • the radiation curable composition, method for its storage, forming method of a cured film and patterning method of the invention can produce cured films with excellent pattern precision at relatively low exposure doses.
  • the present invention is therefore useful for uses of a pattern, electronic components and optical waveguides.
  • FIG. 1 is a schematic edge-on view of a preferred embodiment of an electronic component according to the invention.
  • FIG. 2 is an SEM photograph showing a pattern shape according to an example of the invention.
  • FIG. 3 is an SEM photograph showing a pattern shape according to an example of the invention.
  • FIG. 4 is an SEM photograph showing a pattern shape according to a comparative example of the invention.
  • FIG. 5 is an SEM photograph showing a pattern shape according to a comparative example of the invention.
  • Component (a) is a siloxane resin, which may be a publicly known one and preferably has OH groups on the ends or the side chains of the resin. This will further promote the hydrolytic condensation reaction for curing of the radiation curable composition.
  • the siloxane resin preferably has a weight-average molecular weight (Mw) of 500 to 1 million, more preferably 500-500,000, even more preferably 500-100,000, particularly 500-10,000 and most preferably 500-5000. If the weight-average molecular weight is less than 500, the moldability of the cured film will tend to be inferior, while if the weight-average molecular weight is greater than 1 million, the compatibility with solvents will tend to be reduced. Throughout the present specification, the weight-average molecular weight is the value measured by gel permeation chromatography (hereinafter, “GPC”) and calculated using a standard polystyrene calibration curve.
  • GPC gel permeation chromatography
  • the weight-average molecular weight (Mw) may be measured by GPC under the following conditions, for example.
  • Standard polystyrene Standard polystyrene by Toso Co., Ltd. (molecular weights: 190,000, 17,900, 9100, 2980, 578, 474, 370, 266)
  • Detector RI monitor Model “L-3000” by Hitachi, Ltd.
  • Integrator GPC integrator Model “D-2200” by Hitachi, Ltd.
  • Degas apparatus Model “Shodex DEGAS” by Showa Denko Co., Ltd.
  • R 1 n SiX 4-n (1) resins obtainable by hydrolytic condensation of any compound represented by the following general formula (1): R 1 n SiX 4-n (1) as the essential component.
  • R 1 represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group
  • X represents a hydrolyzable group and n represents an integer of 0-2, and when n is 2, each R 1 may be the same or different and when n is 0-2, each X may be the same or different.
  • hydrolyzable group X there may be mentioned alkoxy, halogens, acetoxy, isocyanate and hydroxyl. Among these, alkoxy is preferred from the standpoint of liquid stability and coating properties of the composition itself.
  • hydrolyzable group X is an alkoxy group
  • alkoxysilanes there may be mentioned tetraalkoxysilanes, trialkoxysilanes and dialkoxysilanes.
  • tetraalkoxysilanes there may be mentioned tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane and tetraphenoxysilane.
  • trialkoxysilanes there may be mentioned trimethoxysilane, triethoxysilane, tripropoxysilane, fluorotrimethoxysilane, fluorotriethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, methyltri-n-butoxysilane, methyltri-iso-butoxysilane, methyltri-tert-butoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltri-iso-propoxysilane, ethyltri-n-butoxysilane, ethyltri-iso-butoxysilane, ethyltri-tert-butoxysilane,
  • dialkoxysilanes there may be mentioned dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldi-n-propoxysilane, dimethyldi-iso-propoxysilane, dimethyldi-n-butoxysilane, dimethyldi-sec-butoxysilane, dimethyldi-tert-butoxysilane, dimethyldiphenoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldi-n-propoxysilane, diethyldi-iso-propoxysilane, diethyldi-n-butoxysilane, diethyldi-sec-butoxysilane, diethyldi-tert-butoxysilane, diethyldiphenoxysilane, di-n-propyldimethoxysilane, di-n-propyldiethoxysilane, di-n-propyl-
  • bissilylalkanes and bissilylbenzenes such as bis(trimethoxysilyl)methane, bis(triethoxysilyl)methane, bis(tri-n-propoxysilyl)methane, bis(tri-iso-propoxysilyl)methane, bis(trimethoxysilyl)ethane, bis(triethoxysilyl)ethane, bis(tri-n-propoxysilyl)ethane, bis(tri-iso-propoxysilyl)ethane, bis(trimethoxysilyl)propane, bis(triethoxysilyl)propane, bis(tri-n-propoxysilyl)propane, bis(tri-iso-propoxysilyl)propane, bis(trimethoxysilyl)benzene, bis(triethoxysilyl)benzene, bis(triethoxysilyl)benzene, bis(triethoxysilyl)
  • R 1 is a group containing an Si atom
  • hexaalkoxydisilanes such as hexamethoxydisilane, hexaethoxydisilane, hexa-n-propoxydisilane and hexa-iso-propoxydisilane
  • dialkyltetraalkoxydisilanes such as 1,2-dimethyltetramethoxydisilane, 1,2-dimethyltetraethoxydisilane and 1,2-dimethyltetrapropoxydisilane.
  • hydrolyzable group X is a halogen atom (halogen group) (halogenated silanes) there may be mentioned these alkoxysilanes having the alkoxy groups in the molecules replaced with halogen atoms.
  • hydrolyzable group X is an acetoxy group (acetoxysilanes) there may be mentioned these alkoxysilanes having the alkoxy groups in the molecules replaced with acetoxy.
  • hydrolyzable group X is an isocyanate group (isocyanatosilanes) there may be mentioned these alkoxysilanes having the alkoxy groups in the molecules replaced with isocyanate.
  • hydrolyzable group X is a hydroxyl group (hydroxysilanes) there may be mentioned these alkoxysilanes having the alkoxy groups in the molecules replaced with hydroxyl.
  • the compounds represented by general formula (1) may be used alone or in combinations of two or more.
  • resins obtainable by hydrolytic condensation of partial condensates such as oligomers of compounds represented by general formula (1)
  • resins obtainable by hydrolytic condensation of partial condensates such as oligomers of compounds represented by general formula (1) with compounds represented by general formula (1) resins obtainable by hydrolytic condensation of compounds represented by general formula (1) with other compounds
  • resins obtainable by hydrolytic condensation of partial condensates such as oligomers of compounds represented by general formula (1) with compounds represented by general formula (1) and other compounds may also be used.
  • partial condensates such as oligomers of compounds represented by general formula (1) there may be mentioned hexaalkoxydisiloxanes such as hexamethoxydisiloxane, hexaethoxydisiloxane, hexa-n-propoxydisiloxane and hexa-iso-propoxydisiloxane, as well as partially condensed trisiloxane, tetrasiloxane and oligosiloxanes.
  • hexaalkoxydisiloxanes such as hexamethoxydisiloxane, hexaethoxydisiloxane, hexa-n-propoxydisiloxane and hexa-iso-propoxydisiloxane, as well as partially condensed trisiloxane, tetrasiloxane and oligosiloxanes.
  • other compounds there may be mentioned compounds having polymerizable double or triple bonds.
  • compounds having polymerizable double bonds there may be mentioned ethylene, propylene, isobutene, butadiene, isoprene, vinyl chloride, vinyl acetate, vinyl propionate, vinyl caproate, vinyl stearate, methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, acrylonitrile, styrene, methacrylic acid, methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, iso-propyl methacrylate, n-butyl methacrylate, acrylic acid, methyl acrylate, ethyl acrylate, phenyl acrylate, vinylpyridine, vinylimidazole, acrylamide, acrylbenzene, diallyl benzene, and partially condensed forms of these compounds.
  • compounds with triple bonds there may be mentioned acetylene, isobut
  • the resins obtained in this manner may be used alone or in combinations of two or more.
  • the amount of water used for hydrolytic condensation of the compound represented by general formula (1) is preferably 0.1-1000 moles and more preferably 0.5-100 moles to 1 mole of the compound represented by general formula (1). If the amount of water is less than 0.1 mole, the hydrolytic condensation reaction will tend to proceed inadequately, while if the amount of water is greater than 1000 moles, gel-like matter will tend to be produced during the hydrolysis or condensation.
  • a catalyst is preferably used for the hydrolytic condensation of the compound represented by general formula (1).
  • suitable catalysts there may be mentioned acid catalysts, alkali catalysts, metal chelate compounds and the like.
  • organic acids and inorganic acids there may be mentioned organic acids and inorganic acids.
  • organic acids there may be mentioned formic acid, maleic acid, fumaric acid, phthalic acid, malonic acid, succinic acid, tartaric acid, malic acid, lactic acid, citric acid, acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, adipic acid, sebacic acid, butyric acid, oleic acid, stearic acid, linolic acid, linoleic acid, salicylic acid, benzenesulfonic acid, benzoic acid, p-aminobenzoic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoromethanesulfonic acid and trifluoroethane
  • alkali catalysts there may be mentioned inorganic alkalis and organic alkalis.
  • inorganic alkalis there may be mentioned sodium hydroxide, potassium hydroxide, rubidium hydroxide and cesium hydroxide.
  • organic alkalis there may be mentioned pyridine, monoethanolamine, diethanolamine, triethanolamine, dimethylmonoethanolamine, monomethyldiethanolamine, ammonia, tetramethylammoniumhydrooxide, tetraethylammoniumhydrooxide, tetrapropylammoniumhydrooxide, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, cyclopentylamine, cyclohexylamine, N,N-dimethylamine, N,N-diethy
  • metal chelate compounds there may be mentioned metal chelate compounds containing titanium, such as trimethoxy mono(acetylacetonate)titanium, triethoxy mono(acetylacetonate)titanium, tri-n-propoxy mono(acetylacetonate)titanium, tri-iso-propoxy mono (acetylacetonate) titanium, tri-n-butoxy mono(acetylacetonate)titanium, tri-sec-butoxy mono (acetylacetonate) titanium, tri-tert-butoxy mono(acetylacetonate)titanium, dimethoxy di(acetylacetonate)titanium, diethoxy di(acetylacetonate)titanium, di-n-propoxy di(acetylacetonate)titanium, di-iso-propoxy di(acetylacetonate)titanium, di-n-butoxy di(acetylacet)
  • the hydrolysis of the compound represented by general formula (1) is preferably carried out using such catalysts mentioned above, but in some cases the stability of the composition may be impaired or inclusion of the catalyst may have adverse effects such as corrosion of other materials. In such cases, the hydrolysis may be followed by, for example, removal of the catalyst from the composition or reaction with other compounds to inactivate the function of the catalyst. There are no particular restrictions on the method of removal or the method of reaction, and removal may be accomplished by distillation or by ion chromatography. The hydrolysate obtained from the compound represented by general formula (1) may also be removed from the composition by reprecipitation or the like.
  • a method for inactivating the function of the catalyst by reaction if the catalyst is an alkali catalyst, there may be mentioned a method of adding an acid catalyst for neutralization by acid-base reaction, or for adjustment of the pH toward the acidic end.
  • the amount of catalyst used is preferably in the range of 0.0001-1 mole to 1 mole of the compound represented by general formula (1).
  • the reaction may not proceed substantially if the amount used is less than 0.0001 mole, while gelling may be promoted during the hydrolytic condensation if the amount is greater than 1 mole.
  • the alcohol by-product of hydrolysis is a protic solvent and is therefore preferably removed using an evaporator or the like.
  • the resin obtained in this manner preferably has a weight-average molecular weight (Mw) of 500 to 1 million, more preferably 500-500,000, even more preferably 500-100,000, particularly 500-10,000 and most preferably 500-5000. If the weight-average molecular weight is less than 500, the moldability of the cured film will tend to be inferior, while if the weight-average molecular weight is greater than 1 million, the compatibility with solvents will tend to be reduced.
  • Mw weight-average molecular weight
  • the total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms with respect to the Si atoms in general formula (1) (hereunder, this will be referred to as the total number (M) of specific bonding atoms (R 1 in general formula (1)) is preferably 1.3-0.2 mole, more preferably 1.0-0.2 mole, even more preferably 0.90-0.2 mole and most preferably 0.8-0.2 mole. This will prevent reduction in adhesion to other films (layers) and mechanical strength of the cured film.
  • the cured film preferably contains one or more atoms selected from the group consisting of H, F, N, Si, Ti and C from the standpoint of moldability, and it preferably contains one or more selected from the group consisting of H, F, N, Si and C from the standpoint of dielectric properties and mechanical strength.
  • M1 represents the total number of atoms bonded with (only) one Si atom among the specific bonding atoms
  • M2 represents the total number of atoms bonded to two silicon atoms among the specific bonding atoms
  • M3 represents the total number of atoms bonded to three silicon atoms among the specific bonding atoms
  • Msi represents the total number of Si atoms.
  • siloxane resins may be used alone or in combinations of two or more.
  • methods for combining two or more siloxane resins there may be mentioned, for example, a method of combining two or more different siloxane resins having different weight-average molecular weights, and a method of combining two or more different siloxane resins obtainable by hydrolytic condensation with different compounds as essential components.
  • Component (b) is a photoacid generator or photobase generator, and it is defined as a compound capable of releasing an acidic activator or basic activator which can promote photocuring (hydrolytic polycondensation) of component (a) by exposure to radiation.
  • diarylsulfonium salts triarylsulfonium salts, dialkylphenacylsulfonium salts, diaryliodonium salts, aryldiazonium salts, aromatic tetracarboxylic acid esters, aromatic sulfonic acid esters, nitrobenzyl esters oximesulfonic acid esters, aromatic N-oximidesulfonates, aromatic sulfamides, haloalkyl group-containing hydrocarbon-based compounds, haloalkyl group-containing heterocyclic compounds and naphthoquinonediazido-4-sulfonic acid esters. These may be used alone or in combinations of two or more. They may also be used in combination with other sensitizing agents or the like.
  • photobase generators there may be mentioned the group of compounds represented by general formulas (2) to (5) below, nonionic photobase generators such as nifedipines, cobaltamine complexes, ionic photobase generators such as the quaternary ammonium salts represented by general formulas (6) and (7) below, and the like. These may be used alone or in combinations of two or more. They may also be used in combination with other sensitizing agents or the like.
  • R 2 represents a C1-30 monovalent organic group which may include an aromatic ring with a methoxy group or nitro group on a side chain
  • R 3 represents a C1-20 monovalent to tetravalent organic group
  • m represents an integer of 1-4.
  • R 4 R 5 C ⁇ N—OCO C ⁇ N—OCO
  • R 3 and m have the same definitions as for general formula (2), and R 4 and R 5 each independently represent C1-30 monovalent organic groups, which may together form a cyclic structure.
  • R—OCO—NR 6 R 7 (4)
  • R 2 has the same definition as for general formula (2), and R 6 and R 7 each independently represent C1-30 monovalent organic groups, which may together form a cyclic structure, and one of which may be a hydrogen atom.
  • R 6 and R 7 have the same definitions as for general formula (4), R 8 represents a C1-30 monovalent organic group which may include an aromatic ring with an alkoxy, nitro, amino, alkyl-substituted amino or alkylthio group on a side chain, and R 9 represents a C1-30 divalent organic group.
  • R 10 represents a C1-30 monovalent organic group
  • R 11 and R 12 each independently represent a C1-30 organic group or hydrogen atom
  • X 1 represents a monovalent group represented by any one of general formulas (6A), (6B), (6C), (6D), (6E) and (6F) below (hereinafter referred to as “(6A) to (6F)”)
  • Z ⁇ represents the counter ion of the ammonium salt
  • t represents an integer of 1-3
  • R 13 , R 14 , R 15 and R 16 each independently represent a C1-30 monovalent organic group
  • R 17 , R 18 and R 19 each independently represent a C1-30 divalent organic group or a single bond
  • R 20 and R 21 each independently represent a C1-30 trivalent organic group.
  • R 10 , R 11 , R 12 , Z ⁇ , t, p and q are the same as in general formula (6) above
  • X 2 represents a divalent group represented by any one of general formulas (7A) to (7D) below.
  • R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 and R 21 have the same definitions as in general formulas (6A) to (6F) above.
  • the amount of component (b) used is not particularly restricted, and may be selected from a wide range since it will depend on the sensitivity and efficiency of the photoacid generator or photobase generator used, the light source used, the thickness of the desired cured film, etc. Specifically, the amount of component (b) used is preferably 0.0001-50 wt %, more preferably 0.001-20 wt % and even more preferably 0.01-10 wt % with respect to the total amount of component (a) in the radiation curable composition.
  • the amount used is less than 0.0001 wt %, the photocuring property will tend to be reduced or a greater exposure dose will tend to be necessary for curing, while if it exceeds 50 wt %, the stability and film-forming property of the composition will tend to be inferior, and the electrical properties and process adaptability of the cured film will tend to be reduced.
  • a photosensitizing agent may be used together with the aforementioned photoacid generator or photobase generator. Using a photosensitizing agent will allow efficient absorption of the radiation energy beam, thereby improving the sensitivity of the photoacid generator or photobase generator.
  • photosensitizing agents there may be mentioned anthracene derivatives, perylene derivatives, anthraquinone derivatives, thioxanthone derivatives, coumarin and the like.
  • component (b) and component (a) may be stored separately for increased storage stability.
  • the radiation curable composition When the radiation curable composition is to be stored overnight, it is preferably stored at a temperature of, for example, 0° C. or below.
  • the lower limit for the temperature is preferably above the congealing point of the solvent in the radiation curable composition, and more preferably ⁇ 50° C.
  • Protic solvents typically alcohols
  • the protic solvent molecules solvate by forming hydrogen bonds with nucleophilic reagents and the like.
  • the solvent molecules must be removed in order to condense the siloxane resin, as they tend to inhibit curing at low temperature.
  • Aprotic solvents are solvents without hydrogen atoms on highly electronegative elements, and are therefore less a cause of reaction inhibition than are protic solvents. Consequently, curing reaction proceeds with generation of acidic active substances and basic active substances at the exposed sections, thereby minimizing any reduction in pattern precision due to diffusion of the acid or base, so that the pattern precision is improved.
  • the acid diffusion controller inactivates (neutralizes) the generated acid to improve the pattern precision. According to the invention, both pattern precision improvement and exposure dose reduction are presumably achieved in this manner.
  • ketone-based solvents such as acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-iso-propyl ketone, methyl-n-butyl ketone, methyl-iso-butyl ketone, methyl-n-pentyl ketone, methyl-n-hexylketone, diethylketone, dipropyl ketone, di-iso-butyl ketone, trimethyl nonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, ⁇ -butyrolactone and ⁇ -valerolactone; ether-based solvents such as diethyl ether, methylethyl ether, methyl-n-propyl ether, di-n-propyl ether;
  • ether-based solvents From the standpoint of sensitivity and pattern precision during pattern formation and mechanical strength of the cured film, ether-based solvents, ester-based solvents, ether acetate-based solvents and ketone-based solvents are preferred. Solvents containing no nitrogen are also preferred. Among these, it is the opinion of the present inventors that ether acetate-based solvents are the most preferable, ether-based solvents are the second most preferable, and ketone-based solvents are the third most preferable. They may be used alone or in combinations of two or more.
  • component (c) is preferably soluble in water or has the solubility of water, and more preferably it is soluble in water and has the solubility of water.
  • a protic solvent is preferably added when the aprotic solvent is not soluble in water or does not have the solubility of water.
  • the compatibility with the solvent of component (a) will be reduced, tending to lower the stability.
  • a smaller amount of protic solvent is preferred.
  • alcohol-based solvents such as methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, t-butanol, n-pentanol, i-pentanol, 2-methylbutanol, sec-pentanol, t-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, n-octanol, 2-ethylhexanol, sec-octanol, n-nonyl alcohol, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec-heptadecyl alcohol, phenol,
  • the proportion of the aprotic solvent used is preferably at least 50 wt %, more preferably at least 70 wt %, even more preferably at least 90 wt % and most preferably at least 95 wt % of the total solvent. If the proportion is too low, the exposed sections will tend to be inadequately cured with a low exposure dose. A low proportion may also require heat treatment at high temperature for adequate curing, while diffusion of the generated acid or base will be more likely and the pattern precision will tend to be reduced.
  • the method of using component (c) is not particularly restricted, and for example, it may be a method of using it as a solvent for preparation of component (a), an addition method or a solvent-exchange method after preparation of component (a), or a method of adding the solvent (c) after removing component (a) by solvent distillation or the like.
  • the radiation curable composition of the invention may also contain water if necessary, but preferably in a range which does not impair the desired characteristics.
  • the amount of water used is preferably no greater than 10 wt %, more preferably no greater than 5 wt % and even more preferably no greater than 2 wt % with respect to the total amount of the radiation curable composition. If the amount of water used exceeds 10 wt %, the coatability and coating solution stability will tend to be inferior. Although the exact reason is unknown, addition of a small amount of water can sometimes permit reduction of the exposure dose.
  • the amount of solvent used is preferably an amount which gives a concentration of 3-60 wt % for component (a) (siloxane resin). If the amount of solvent is excessive so that the concentration of component (a) is less than 3 wt %, it will tend to be difficult to form a cured film with the desired film thickness, while if the amount of solvent is insufficient so that the concentration of component (a) is greater than 60 wt %, the film-forming property of the cured film will be poor and the stability of the composition itself will tend to be reduced.
  • Component (d) according to the invention is a curing acceleration catalyst, and its addition to the radiation curable composition is preferred because it can enhance the effect of reducing the amount of the photoacid generator or photobase generator required, the effect of reducing the exposure dose required and the effect of lowering the PEB temperature.
  • the curing acceleration catalyst differs from an ordinary photoacid generator or photobase generator for component (b) which generates an active substance by light. It will therefore usually be distinguished from an onium salt used as the photoacid generator or photobase generator. Nevertheless, a material which comprises both the photoacid generator or photobase generator and the curing acceleration catalyst may be used.
  • the catalyst may be a specific one which does not exhibit a catalytic effect in solution but exhibits its activity in the coating after application.
  • the curing reaction accelerated by the curing acceleration catalyst proceeds simultaneously with generation of an acidic active substance or basic active substance at the exposed sections, the reduction in the pattern precision due to diffusion of the acid or base is further inhibited, or in other words, the pattern precision is further improved.
  • a composition comprising component (a) and component (c) is prepared.
  • composition prepared in 1. above is applied onto a silicon wafer so that the post-baking film thickness is 1.0 ⁇ 0.1 ⁇ m, and then baked for 30 seconds at a prescribed temperature, and the film thickness of the coating is measured.
  • the coating-formed silicon wafer is immersed for 30 seconds into a 2.38 wt % tetramethylammonium hydroxide (TMAH) aqueous solution at 23 ⁇ 2° C., washed and dried, and then the coating film loss is observed.
  • TMAH tetramethylammonium hydroxide
  • the insolubility temperature is defined as the minimum temperature during baking at which the change in the coating film thickness before and after immersion in the TMAH aqueous solution is less than 20%.
  • the compound whose curing acceleration catalyst power is to be confirmed is added to the composition prepared in 1. above at 0.01 wt % to obtain a composition, and the insolubility temperature is determined in the same manner as 2. and 3. above. If the insolubility temperature is lowered by addition of the compound whose curing acceleration catalyst power is to be confirmed, the compound is judged as having curing acceleration catalyst power.
  • alkali metals such as sodium hydroxide, sodium chloride, potassium hydroxide and potassium chloride, and onium salts. These may be used alone or in combinations of two or more.
  • Onium salts are preferred among these, with quaternary ammonium salts being more preferred, from the standpoint of improving the electrical properties and mechanical strength of the obtained cured film while also increasing the stability of the composition.
  • an onium salt compound which may be mentioned is a salt formed from (d-1) a nitrogen-containing compound and (d-2) at least one selected from among anionic group-containing compounds and halogen atoms.
  • the atom bonded to the nitrogen of the (d-1) nitrogen-containing compound is preferably at least one selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms.
  • anionic groups there may be mentioned hydroxyl, nitrate, sulfate, carbonyl, carboxyl, carbonate and phenoxy.
  • ammonium salt compounds such as ammonium hydroxide, ammonium fluoride, ammonium chloride, ammonium bromide, ammonium iodide, ammonium phosphate, ammonium nitrate, ammonium borate, ammonium sulfate, ammonium formate, ammonium maleate, ammonium fumarate, ammonium phthalate, ammonium malonate, ammonium succinate, ammonium tartrate, ammonium malate, ammonium lactate, ammonium citrate, ammonium acetate, ammonium propionate, ammonium butanoate, ammonium pentanoate, ammonium hexanoate, ammonium heptanoate, ammonium octanoate, ammonium nonanoate, ammonium decanoate, ammonium oxalate, ammonium adipate, ammonium sebacate, ammonium butyrate
  • ammonium salt compounds wherein the ammonium portion of the ammonium salt compounds are replaced with methyl ammonium, dimethyl ammonium, trimethyl ammonium, tetramethyl ammonium, ethyl ammonium, diethyl ammonium, triethyl ammonium, tetraethyl ammonium, propyl ammonium, dipropyl ammonium, tripropyl ammonium, tetrapropyl ammonium, butyl ammonium, dibutyl ammonium, tributyl ammonium, tetrabutyl ammonium, ethanol ammonium, diethanol ammonium or triethanol ammonium.
  • onium salt compounds there are preferred tetramethylammonium nitrate, tetramethylammonium acetate, tetramethylammonium propionate, tetramethylammonium maleate and tetramethylammonium sulfate, from the standpoint of curing acceleration for the cured film.
  • the amount of component (d) used is preferably 0.0001-5 wt % and more preferably 0.0001-1 wt %, with respect to the total amount of component (a) in the radiation curable composition. If the amount used is less than 0.0001 wt %, a greater exposure dose will tend to be necessary for curing. If the amount used is greater than 5 wt %, the stability and film-forming property of the composition will tend to be poor, while the electrical properties and process adaptability of the cured film will tend to be reduced.
  • the amount of the curing acceleration catalyst of component (d) used is preferably 0.0001-0.1 wt %, more preferably 0.0001-0.05 wt % and even more preferably 0.0005-0.01 wt % with respect to the total amount of component (a) in the radiation curable composition.
  • onium salts may also be added after dissolution or dilution to the prescribed concentration in water or another solvent, as necessary. There are no particular restrictions on the timing for the addition, and for example, it may be carried out at the start of hydrolysis of component (a), during the hydrolysis, after completion of the reaction, before or after solvent distillation or at the point of adding the acid generator.
  • a pigment may also be added to the radiation curable composition of the invention. Addition of a pigment can produce a sensitivity-adjusting effect or a stationary wave-inhibiting effect.
  • thermal decomposing compounds such as polypropylene glycol, volatile compounds and the like may be added in ranges which do not interfere with the object or effect of the invention.
  • Thermal decomposing compounds and volatile compounds decompose or volatilize by heat (preferably 250-500° C.), and preferably are capable of forming gaps.
  • the siloxane resin as component (a) may also exhibit a gap-forming property.
  • the radiation curable composition of the invention When the radiation curable composition of the invention is to be used in an electronic component, it preferably contains no alkali metal or alkaline earth metal, or maximally at a metal ion concentration of no greater than 1000 ppm and more preferably no greater than 1 ppm in the composition. If the concentration of these metal ions is greater than 1000 ppm, the metal ions will more readily enter into the electronic component, e.g. semiconductor element comprising the cured film obtained from the composition, potentially having an adverse effect on the device performance. Thus, if necessary, it may be effective to remove the alkali metals or alkaline earth metals from the composition using an ion-exchange filter, for example. However, no such restriction exists for use as an optical waveguide or for other uses, so long as the intended purpose is not impeded.
  • a method of forming a patterned cured film on a substrate using a radiation curable composition of the invention will now be explained through an example of a spin coating method, which generally has excellent film formability and film uniformity.
  • the forming method of a cured film is not limited to a spin coating method.
  • the substrate may have a flat surface or it may be irregular, with electrodes or the like formed therein.
  • the radiation curable composition is coated onto a substrate such as a silicon wafer or glass substrate at preferably 500-5000 rpm and more preferably 500-3000 rpm to form a coating. If the rotation rate is less than 500 rpm, the film uniformity will tend to be poor, and if the rotation rate is greater than 5000 rpm, the film-forming property may be impaired.
  • the film thickness of the cured film will differ depending on the intended use, and for example, the film thickness for use as an interlayer insulating film in an LSI or the like is preferably 0.01-2 ⁇ m, while the film thickness is preferably 2-40 ⁇ m for use as a passivation layer.
  • the film thickness for liquid crystal uses is preferably 0.1-20 ⁇ m
  • the film thickness for photoresist uses is preferably 0.1-2 ⁇ m
  • the film thickness for optical waveguide uses is preferably 1-50 ⁇ m.
  • the film thickness will be preferably 0.01-10 ⁇ m, more preferably 0.01-5 ⁇ m, even more preferably 0.01-3 ⁇ m, still more preferably 0.01-2 ⁇ m and most preferably 0.1-2 ⁇ m.
  • the concentration of component (a) in the composition may be adjusted to control the film thickness of the cured film.
  • the film thickness may be controlled by adjusting the rotation rate and number of applications.
  • the concentration of component (a) may be increased for a greater film thickness or the concentration of component (a) may be decreased for a smaller film thickness.
  • the rotation rate may be decreased or the number of applications increased for a greater film thickness, or alternatively the rotation rate may be increased or the number applications decreased for a smaller film thickness.
  • the solvent in the coating is then dried with a hot plate at preferably 50-200° C. and more preferably 70-150° C., and the drying temperature must be adjusted so that the coating will dissolve under the conditions used for subsequent development. If the drying temperature is below 50° C., drying of the solvent will tend to be inadequate, and if it is above 200° C., the film may not dissolve during development and a pattern may not be formed.
  • the exposure dose is preferably 5-5000 mJ/cm 2 , more preferably 5-1000 mJ/cm 2 , even more preferably 5-500 mJ/cm 2 and most preferably 5-100 mJ/cm 2 . If the exposure dose is less than 5 mJ/cm 2 it may be difficult to achieve control depending on the light source, and if it is greater than 5000 mJ/cm 2 the exposure time will be longer, tending to lower productivity.
  • the exposure dose for an ordinary siloxane-based radiation curable composition of the prior art is about 500-5000 mJ/cm 2 .
  • the radiation employed may be visible light, ultraviolet light, infrared light, X-rays, ⁇ -rays, ⁇ -rays, ⁇ -rays or the like, although ultraviolet rays are particularly preferred.
  • ultraviolet ray generating sources there may be mentioned ultrahigh voltage mercury lamps, high voltage mercury lamps, low voltage mercury lamps, metal halide lamps and excimer lamps.
  • the unexposed sections are adequately soluble in the developing solution, but acidic active substances or basic active substances are generated at the exposed sections, producing hydrolytic condensation reaction and lowering the solubility in the developing solution. This results in formation of a pattern.
  • the exposure may be followed by a heating step (post-exposure baking: PEB).
  • PEB post-exposure baking
  • the heating may be accomplished by heating the coating on a hot plate or the like, and preferably the heating is in a temperature range at which the solubility of the unexposed sections in the developing solution is not lowered.
  • the temperature is preferably 50-200° C., more preferably 70-150° C., even more preferably 70-110° C. and most preferably 70-100° C. A lower temperature is preferred because a higher temperature will tend to facilitate diffusion of the generated acid.
  • the heating temperature is usually about 115-120° C. in the PEB step for an ordinary siloxane-based radiation curable composition of the prior art.
  • a developing solution such as an aqueous alkali solution may be used for development, i.e. for removal of the unexposed sections of the radiation curable composition.
  • aqueous alkali solutions there may be mentioned inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and ammonia; primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; and quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH) and tetraethylammonium hydroxide.
  • TMAH tetramethylammonium hydroxide
  • TMAH tetraethylammonium hydroxide
  • the aqueous alkali solution may be an aqueous solution containing an appropriate amount of an added water-soluble organic solvent or surfactant as appropriate. Since contamination by alkali metals is undesirable for electronic components, an aqueous tetramethylammonium hydroxide solution is preferred as the developing solution.
  • the preferred developing time will differ depending on the film thickness and solvent, but in most cases it is preferably from 5 seconds to 5 minutes, more preferably from 30 seconds to 3 minutes and most preferably from 30 seconds to 1 minute. If the developing time is shorter than 5 seconds it may be difficult to control the time on the total surface of the wafer or substrate, while if it is longer than 5 minutes the productivity may be lower.
  • the treatment temperature for development will generally be 20-30° C.
  • the developing method may be, for example, a spray, paddle, immersion or ultrasonic system. The pattern formed by development may subsequently be rinsed with distilled water or the like if necessary.
  • the patterned cured film of the invention may be also used directly as a resist mask.
  • the coating may be fired at a heating temperature of, for example, 100-500° C. for final curing.
  • the final curing is preferably carried out in an inert atmosphere of N 2 , Ar, He or the like, in air or under reduced pressure, but there are no particular restrictions so long as it yields the properties required for the intended use. If the heating temperature is below 100° C. the curing may tend to be insufficient, leading to a poor electrical insulation property, whereas heating at a temperature of above 500° C. may result in deterioration of the underlying materials.
  • the heating time for the final curing is preferably 2-240 minutes and more preferably 2-120 minutes. A heating time of longer than 240 minutes may not be suitable for mass production.
  • heating apparatuses to be used there may be mentioned furnaces such as quartz tube furnaces, and heat treatment apparatuses such as hot plates and rapid thermal annealers (RTA).
  • Examples of electronic components employing the cured film described above include devices comprising insulating films, such as semiconductor elements, multilayer wiring boards and the like.
  • the cured film may be used as a surface protective film (passivation film), buffer coat film or interlayer insulating film for a semiconductor element. It may also be suitably used as an interlayer insulating film for a multilayer wiring board.
  • semiconductor elements there may be mentioned discrete semiconductors such as diodes, transistors, compound semiconductors, thermistors, varistors and thyristors, memory elements such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), EPROM (Erasable/Programmable Read Only Memory), Mask ROM (Mask Read Only Memory), EEPROM (Electrical/Erasable/Programmable Read Only Memory) and flash memory, logic circuit elements such as microprocessors, DSP and ASIC, integrated circuit elements such as compound semiconductors including MMIC (Monolithic Microsave Integrated Circuit), hybrid integrated circuits (hybrid IC), and photoelectric conversion elements such as light emitting diodes and charge coupled devices.
  • multilayer wiring boards there may be mentioned high-density wiring boards such as MCM.
  • the cured film may also be used for liquid crystal parts, optical waveguides and photoresists, with no particular limitation to these.
  • FIG. 1 is a schematic edge-on view of an embodiment of a TFT (Thin-Film Transistor) according to the invention, as an electronic component for installation in a TFT liquid crystal display.
  • a conduction layer 3 made of polysilicon is formed on an undercoat film 2 formed on a glass substrate 1 , and a source 4 and drain 5 are situated sandwiching the conduction layer 3 in the in-plane direction.
  • a gate electrode 7 is provided on the conduction layer 3 via a gate oxidation film 6 composed of SiO 2 .
  • the gate oxidation film 6 is formed in such a manner as to prevent direct contact between the conduction layer 3 and the gate electrode 7 .
  • the undercoat layer 2 , conduction layer 3 , source 4 , drain 5 , gate oxidation film 6 and gate electrode 7 are covered with a first interlayer insulating film 8 to prevent shorting, and portions of the first interlayer insulating film 8 are removed during formation of the TFT, with metal wirings 9 extending from those portions to connect with the source 4 and drain 5 , respectively.
  • the portion of the metal wiring 9 extending to connect to the drain 5 is electrically connected to a transparent electrode 11 , while the remaining portion is covered with a second interlayer insulating film 10 to prevent shorting.
  • the cured film obtained from the radiation curable composition of the invention is provided in the TFT primarily as the second interlayer insulating film 10 , but it may also be used as the first interlayer insulating film 8 .
  • the interlayer insulating films 8 , 10 may be formed in the following manner, for example. First, the radiation curable composition of the invention is applied onto a substrate by a spin coating method and dried to obtain a coating.
  • the coating is exposed through a mask having the desired pattern for curing of the desired sections (in the case of the first interlayer insulating film 8 , the sections other than the sections on which the metal wiring 9 is to be formed, or in the case of the second interlayer insulating film 10 , the sections other than the sections on which the transparent electrode 11 is to be formed), and then further subjected to heat treatment if necessary.
  • the unexposed sections are removed by developing treatment to obtain interlayer insulating films 8 , 10 . This may be followed by heat treatment if necessary for final curing.
  • the interlayer insulating films 8 , 10 may have the same composition or different compositions.
  • Each of the examples was carried out in an environment without the photosensitive wavelength of the photoacid generator or photobase generator and sensitizing agent used until completion of the development step for the radiation curable composition, to avoid exciting the photoacid generator or photobase generator.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 5-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 200 mJ/cm 2 using an exposing apparatus (PLA-600F, Canon) through a negative mask bearing a line pattern with a minimum line width of 10 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • a photoacid generator (PAI-1001, product of Midori Kagaku) was added to 10.0 g of the radiation curable composition polysiloxane solution to prepare a radiation curable composition.
  • the amount of component (a) used was 15 wt % with respect to the total radiation curable composition
  • the amount of component (b) used was 1.9 wt % with respect to the total radiation curable composition
  • the amount of component (d) used was 0.075 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 5-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 70° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 200 mJ/cm 2 using an exposing apparatus (PLA-600F, Canon) through a negative mask bearing a line pattern with a minimum line width of 10 ⁇ m.
  • the wafer carrying the exposed coating was immersed for 30 seconds in a developing solution comprising a 2.38 wt % tetramethylammonium hydroxide (TMAH) aqueous solution, to dissolve the unexposed sections.
  • TMAH 2.38 wt % tetramethylammonium hydroxide
  • the wafer was then washed and spin dried.
  • a furnace body was used for heating of the spin dried wafer at 350° C. for 30 minutes in a nitrogen atmosphere, to obtain a radiation cured film on the wafer.
  • a photoacid generator PAI-101, product of Midori Kagaku
  • PAI-101 photoacid generator
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 6-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 100 mJ/cm 2 using an exposing apparatus (FPA-3000 iW, Canon) through a negative mask bearing a line pattern with a minimum line width of 2 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • reaction was conducted for 3 hours and then a portion of the produced ethanol and the propyleneglycol methyl ether acetate were distilled off under reduced pressure in a warm bath to obtain 359.94 g of a polysiloxane solution. Propyleneglycol methyl ether acetate was then added thereto to obtain 450.02 g of a polysiloxane solution for a radiation curable composition.
  • the weight-average molecular weight of the polysiloxane was 1110 as measured by GPC.
  • a photoacid generator PAI-101, product of Midori Kagaku
  • PAI-101 photoacid generator
  • the amount of component (a) used was 20 wt % with respect to the total radiation curable composition
  • the amount of component (b) used was 0.4 wt % with respect to the total radiation curable composition
  • the amount of component (d) used was 0.1 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 6-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 75 mJ/cm 2 using an exposing apparatus (FPA-3000 iW, Canon) through a negative mask bearing a line pattern with a minimum line width of 2 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • a radiation curable composition To 10.0 g of the radiation curable composition polysiloxane solution obtained in Example 4 there was added 0.040 g of a photobase generator (NBC-101, product of Midori Kagaku), to prepare a radiation curable composition.
  • the amount of component (a) used was 20 wt % with respect to the total radiation curable composition
  • the amount of component (b) used was 0.4 wt % with respect to the total radiation curable composition
  • the amount of component (d) used was 0.1 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 6-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 100 mJ/cm 2 using an exposing apparatus (FPA-3000 iW, Canon) through a negative mask bearing a line pattern with a minimum line width of 2 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • a furnace body was used for heating of the spin dried wafer at 350° C. for 30 minutes in a nitrogen atmosphere, to obtain a radiation cured film on the wafer.
  • a radiation curable composition To 10.0 g of the radiation curable composition polysiloxane solution obtained in Example 4 there was added 0.040 g of a photoacid generator (PAI-101, product of Midori Kagaku) and 0.5 g of polypropylene glycol (PPG725 by Aldrich) as a thermal decomposing compound, to prepare a radiation curable composition.
  • the amount of component (a) used was 20 wt % with respect to the total radiation curable composition
  • the amount of component (b) used was 0.4 wt % with respect to the total radiation curable composition
  • the amount of component (d) used was 0.1 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 6-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 100 mJ/cm 2 using an exposing apparatus (FPA-3000 iW, Canon) through a negative mask bearing a line pattern with a minimum line width of 2 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • a furnace body was used for heating of the spin dried wafer at 350° C. for 30 minutes in a nitrogen atmosphere, to obtain a radiation cured film on the wafer.
  • the film thickness of the radiation cured film was 3.0 ⁇ m, and yet no cracking or other problems were found.
  • the amount of component (a) used was 15 wt % with respect to the total radiation curable composition, the amount of component (b) used was 1.5 wt % with respect to the total radiation curable composition, and the amount of component (d) used was 0.08 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 5-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 200 mJ/cm 2 using an exposing apparatus (PLA-600F, Canon) through a negative mask bearing a line pattern with a minimum line width of 10 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • the weight-average molecular weight of the polysiloxane was 870 as measured by GPC.
  • 0.150 g of a photoacid generator (PAI-1001, product of Midori Kagaku) was added to 10.0 g of the radiation curable composition polysiloxane solution, but no dissolution occurred.
  • the amount of component (a) used was 20 wt % with respect to the total radiation curable composition
  • the amount of component (b) used was 1.5 wt % with respect to the total radiation curable composition
  • the amount of component (d) used was 0.01 wt % with respect to the total radiation curable composition.
  • a photoacid generator (PAI-1001, product of Midori Kagaku) was added to 10.0 g of the radiation curable composition polysiloxane solution, to obtain a radiation curable composition.
  • the amount of component (a) used was 15 wt % with respect to the total radiation curable composition, and the amount of component (b) used was 1.5 wt % with respect to the total radiation curable composition.
  • a 2 mL portion of the radiation curable composition was added dropwise onto the center of a 5-inch silicon wafer and subjected to spin coating (30 seconds of rotation at 700 rpm) to form a coating on the wafer, and this was dried for 30 seconds on a 100° C. hot plate.
  • the dried coating was exposed to ultraviolet rays at 200 mJ/cm 2 using an exposing apparatus (PLA-600F, Canon) through a negative mask bearing a line pattern with a minimum line width of 10 ⁇ m.
  • the wafer carrying the exposed coating was heated on a 100° C.
  • TMAH tetramethylammonium hydroxide
  • a photoacid generator (PAI-1001, product of Midori Kagaku) was added to 10.0 g of the radiation curable composition polysiloxane solution, but no dissolution occurred.
  • the amount of component (a) used was 20 wt % with respect to the total radiation curable composition, and the amount of component (b) used was 1.5 wt % with respect to the total radiation curable composition.
  • Example 1 present absent 200 100 10 good
  • Example 2 present present 100 None 10 good
  • Example 3 present absent 100 100 2 good
  • Example 4 present present 75
  • Example 5 present present present 100 100 2 good
  • Example 6 present present 100 100 2 good Comp. Ex. 1 absent present 200 100 no pattern formed Comp. Ex. 2 absent present 1000 100 10 poor Comp. Ex. 3 absent present no dissolution of photoacid generator Comp. Ex. 4 absent absent 200 100 no pattern formed Comp. Ex. 5 absent absent 1000 100 10 poor Comp. Ex. 6 absent absent no dissolution of photoacid generator
  • Example 3 When the radiation curable composition obtained in Example 3 was stored for 30 days in an atmosphere at ⁇ 20° C., the storage stability was superior compared to storage of the same radiation curable composition for 30 days in an atmosphere at ordinary temperature.
  • the radiation curable composition stored in an atmosphere at ⁇ 20° C. was successfully patterned even after storage for 30 days, but the radiation curable composition stored for 30 days in an atmosphere at ordinary temperature could not be patterned even after 7 days. This is attributed to progressive condensation of the siloxane resin, with concomitant production of water, in the radiation curable composition stored for 7 days in an atmosphere at ordinary temperature.
  • the radiation curable composition, method for its storage, forming method of a cured film and patterning method of the invention it is possible to obtain cured films with excellent pattern precision even with a relatively low exposure dose.
  • the invention is therefore useful for uses of a pattern, electronic components and optical waveguides.

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117044A1 (en) * 2005-11-21 2007-05-24 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
US20090155546A1 (en) * 2005-08-29 2009-06-18 Tokyo Ohka Kogyo Co., Ltd. Film-forming composition, method for pattern formation, and three-dimensional mold
US20100092895A1 (en) * 2007-02-27 2010-04-15 Ruzhi Zhang Silicon-based antireflective coating compositions
US20100247799A1 (en) * 2009-03-31 2010-09-30 Tokyo Ohka Kogyo Co., Ltd. Application liquid and method for formation of a silica-based coating film using the application liquid
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
US8158981B2 (en) 2006-09-25 2012-04-17 Hitachi Chemical Company, Ltd. Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film
US20130215197A1 (en) * 2012-02-16 2013-08-22 Xerox Corporation Printhead fluid paths formed with sacrificial material patterned using additive manufacturing processes
WO2015051301A1 (en) * 2013-10-04 2015-04-09 Burning Bush Technologies, LLC High performance compositions and composites
WO2016067525A1 (en) * 2014-10-30 2016-05-06 Canon Kabushiki Kaisha Liquid ejection device, nanoimprinting apparatus, nanoimprinting liquid storage tank, method of manufacturing cured product pattern, method of manufacturing optical component, method of manufacturing circuit board, and method of manufacturing imprinting mold
US20160291470A1 (en) * 2015-03-31 2016-10-06 Chi Mei Corporation Photosensitive polysiloxane composition, protecting film, and element having protective film
US9567488B2 (en) 2012-07-03 2017-02-14 Burning Bush Group, Llc High performance silicon based coating compositions
US9856400B2 (en) 2012-04-27 2018-01-02 Burning Bush Group, Llc High performance silicon based coating compositions
CN108885944A (zh) * 2016-03-30 2018-11-23 日本瑞翁株式会社 有机系太阳能电池用密封剂组合物、有机系太阳能电池用密封剂、有机系太阳能电池用电极以及有机系太阳能电池
US10138381B2 (en) 2012-05-10 2018-11-27 Burning Bush Group, Llc High performance silicon based thermal coating compositions
US10850302B2 (en) 2014-10-30 2020-12-01 Canon Kabushiki Kaisha Liquid ejection device, nanoimprinting apparatus, nanoimprinting liquid storage tank, method of manufacturing cured product pattern, method of manufacturing optical component, method of manufacturing circuit board, and method of manufacturing imprinting mold
US12122936B2 (en) 2023-08-17 2024-10-22 Burning Bush Group Llc High performance silicon-based coating compositions

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000112B2 (ja) * 2005-09-09 2012-08-15 東京応化工業株式会社 ナノインプリントリソグラフィによるパターン形成方法
WO2010005892A1 (en) * 2008-07-08 2010-01-14 Massachusetts Institute Of Technology Resist composition and lithographic process using said composition
US8158338B2 (en) * 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
JP5093004B2 (ja) * 2008-09-02 2012-12-05 Ｊｓｒ株式会社 パターン形成方法
JP5399116B2 (ja) * 2009-04-06 2014-01-29 三洋化成工業株式会社 光塩基発生剤を含有する感光性組成物
JP5568892B2 (ja) * 2009-05-01 2014-08-13 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP2011026495A (ja) * 2009-07-28 2011-02-10 Asahi Kasei E-Materials Corp ポリオルガノシロキサンの保存方法
JP5685407B2 (ja) * 2010-09-07 2015-03-18 株式会社カネカ 塗料用樹脂組成物
TWI567497B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
TWI567498B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
JP6137862B2 (ja) * 2013-02-20 2017-05-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型感光性シロキサン組成物
US11561472B2 (en) 2015-06-11 2023-01-24 Nissan Chemical Industries, Ltd. Radiation sensitive composition
JP2019095695A (ja) * 2017-11-27 2019-06-20 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ネガ型感光性シロキサン組成物、ならびにそれを用いた硬化膜および電子素子の製造方法

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972560A (en) * 1997-01-31 1999-10-26 Shin-Etsu Chemical Co., Ltd. High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
US6187505B1 (en) * 1999-02-02 2001-02-13 International Business Machines Corporation Radiation sensitive silicon-containing resists
US6204350B1 (en) * 1997-03-14 2001-03-20 3M Innovative Properties Company Cure-on-demand, moisture-curable compositions having reactive silane functionality
US6207728B1 (en) * 1998-06-18 2001-03-27 Jsr Corporation Photo-curable composition and photo-cured product
US20010050741A1 (en) * 2000-02-28 2001-12-13 Hirohisa Hokazono Antireflection film, sheet polarizer and liquid crystal display device
US20020172492A1 (en) * 2001-03-29 2002-11-21 Shipley Company, L.L.C. Waveguide and composition
US20030171468A1 (en) * 2001-03-13 2003-09-11 Isao Nishimura Radiation-sensitive composition changing in refractive index and utilization thereof
US20030170561A1 (en) * 2001-12-05 2003-09-11 Haruo Iwasawa Radiation-sensitive resin composition
US20040033752A1 (en) * 1999-05-14 2004-02-19 Ifire Technology, Inc. Method of forming a patterned phosphor structure for an electroluminescent laminate
US6737169B2 (en) * 2001-01-31 2004-05-18 Jsr Corporation Polymer composition, cured product, laminate and method for producing the cured product
US6821718B2 (en) * 2001-02-16 2004-11-23 International Business Machines Corporation Radiation sensitive silicon-containing negative resists and use thereof
US6899991B2 (en) * 2001-10-09 2005-05-31 Shin-Etsu Chemical Co., Ltd. Photo-curable resin composition, patterning process, and substrate protecting film
US20050266344A1 (en) * 2003-10-07 2005-12-01 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide
US7108955B2 (en) * 2001-05-01 2006-09-19 Jsr Corporation Polysiloxane, process for production thereof and radiation-sensitive resin composition

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107561A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd レジスト組成物
JPH06148887A (ja) * 1991-01-28 1994-05-27 Oki Electric Ind Co Ltd 感光性樹脂組成物
JPH04366958A (ja) 1991-06-14 1992-12-18 Oki Electric Ind Co Ltd 放射線感応性樹脂組成物
EP0523957A1 (de) * 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Strahlungsempfindliche Zusammensetzung
JPH06148895A (ja) * 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
JP3376629B2 (ja) * 1993-03-19 2003-02-10 東レ株式会社 感光性樹脂組成物およびこれを使用したパターン形成方法
JP3628098B2 (ja) 1996-03-29 2005-03-09 ダウ コーニング アジア株式会社 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法
JP3321548B2 (ja) 1996-06-17 2002-09-03 株式会社日立製作所 感光性ポリイミド前駆体組成物、およびそれを用いたパターン形成方法
JP3505990B2 (ja) 1997-01-31 2004-03-15 信越化学工業株式会社 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
JP3870471B2 (ja) * 1997-03-05 2007-01-17 東レ株式会社 感光性樹脂組成物、およびこれを使用したパターン形成方法
JP2000181069A (ja) 1998-10-05 2000-06-30 Tonen Corp 感光性ポリシラザン組成物及びパタ―ン化されたポリシラザン膜の形成方法
US6210856B1 (en) 1999-01-27 2001-04-03 International Business Machines Corporation Resist composition and process of forming a patterned resist layer on a substrate
JP4270708B2 (ja) 1999-04-23 2009-06-03 富士通株式会社 ケイ素含有ポリマ、その製造方法、それを用いたレジスト組成物、パターン形成方法および電子デバイスの製造方法
JP2001083710A (ja) 1999-09-09 2001-03-30 Jsr Corp 電子部品用材料およびそれを硬化してなる電子部品
JP2001215714A (ja) 2000-02-02 2001-08-10 Fuji Photo Film Co Ltd 感放射線性樹脂組成物
JP2001288364A (ja) 2000-04-05 2001-10-16 Jsr Corp 放射線硬化性組成物およびそれを用いた光導波路ならびに光導波路の製造方法
JP3414708B2 (ja) 2000-08-31 2003-06-09 クラリアント ジャパン 株式会社 パターン化されたポリシラザン膜の形成方法
JP2002107932A (ja) * 2000-10-03 2002-04-10 Toray Ind Inc 感放射線性組成物
WO2002046841A1 (fr) 2000-12-05 2002-06-13 Kansai Research Institute. Inc. Constituants actifs et compositions de resine photosensible les contenant
JP4107561B2 (ja) 2002-01-30 2008-06-25 トッパン・フォームズ株式会社 導電回路を有する接着シートの製法
EP1481282A4 (de) 2002-03-04 2009-10-28 Shipley Co Llc Negativ-photoresist für die kurzwellenlängenabbildung

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972560A (en) * 1997-01-31 1999-10-26 Shin-Etsu Chemical Co., Ltd. High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
US6204350B1 (en) * 1997-03-14 2001-03-20 3M Innovative Properties Company Cure-on-demand, moisture-curable compositions having reactive silane functionality
US6207728B1 (en) * 1998-06-18 2001-03-27 Jsr Corporation Photo-curable composition and photo-cured product
US6187505B1 (en) * 1999-02-02 2001-02-13 International Business Machines Corporation Radiation sensitive silicon-containing resists
US6344305B1 (en) * 1999-02-02 2002-02-05 International Business Machines Corporation Radiation sensitive silicon-containing resists
US20040033752A1 (en) * 1999-05-14 2004-02-19 Ifire Technology, Inc. Method of forming a patterned phosphor structure for an electroluminescent laminate
US20010050741A1 (en) * 2000-02-28 2001-12-13 Hirohisa Hokazono Antireflection film, sheet polarizer and liquid crystal display device
US6737169B2 (en) * 2001-01-31 2004-05-18 Jsr Corporation Polymer composition, cured product, laminate and method for producing the cured product
US6821718B2 (en) * 2001-02-16 2004-11-23 International Business Machines Corporation Radiation sensitive silicon-containing negative resists and use thereof
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US20020172492A1 (en) * 2001-03-29 2002-11-21 Shipley Company, L.L.C. Waveguide and composition
US7108955B2 (en) * 2001-05-01 2006-09-19 Jsr Corporation Polysiloxane, process for production thereof and radiation-sensitive resin composition
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US20030170561A1 (en) * 2001-12-05 2003-09-11 Haruo Iwasawa Radiation-sensitive resin composition
US20050266344A1 (en) * 2003-10-07 2005-12-01 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide

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US20160291470A1 (en) * 2015-03-31 2016-10-06 Chi Mei Corporation Photosensitive polysiloxane composition, protecting film, and element having protective film
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EP1672426A4 (de) 2010-02-24
US8034545B2 (en) 2011-10-11
JPWO2005036269A1 (ja) 2006-12-21
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