US20050217823A1 - Aluminum bonding member and method for producing same - Google Patents

Aluminum bonding member and method for producing same Download PDF

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Publication number
US20050217823A1
US20050217823A1 US11/096,301 US9630105A US2005217823A1 US 20050217823 A1 US20050217823 A1 US 20050217823A1 US 9630105 A US9630105 A US 9630105A US 2005217823 A1 US2005217823 A1 US 2005217823A1
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Prior art keywords
aluminum
die
bonded
tubular member
set forth
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US11/096,301
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English (en)
Inventor
Hideyo Osanai
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Dowa Metaltech Co Ltd
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Dowa Mining Co Ltd
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Assigned to DOWA MINING CO., LTD. reassignment DOWA MINING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSANAI, HIDEYO
Publication of US20050217823A1 publication Critical patent/US20050217823A1/en
Assigned to DOWA HOLDINGS CO., LTD. reassignment DOWA HOLDINGS CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: DOWA MINING CO., LTD.
Assigned to DOWA METALTECH CO., LTD. reassignment DOWA METALTECH CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DOWA HOLDINGS CO., LTD.
Priority to US13/404,233 priority Critical patent/US8745841B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00—Casting in, on, or around objects which form part of the product
    • B22D19/0072—Casting in, on, or around objects which form part of the product for making objects with integrated channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0272—Adaptations for fluid transport, e.g. channels, holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49885—Assembling or joining with coating before or during assembling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating
    • Y10T29/49984—Coating and casting

Definitions

  • the present invention generally relates to an aluminum bonding member and a method for producing the same. More specifically, the invention relates to an aluminum bonding member, in which a tubular member for allowing the flow of a cooling agent and which is used as a cooling member for electronic parts, such as metal/ceramic circuit boards, and a method for producing the same.
  • a cooling member such as a radiating fin
  • a metal/ceramic circuit board wherein a metal circuit plate is bonded to one side of a ceramic substrate and a radiating metal plate is bonded to the other side thereof
  • a method for soldering one or a plurality of ceramic substrates, to each of which a metal circuit plate having a semiconductor chip soldered thereon is bonded, on a metal base plate (a radiating plate) or a composite material and for mounting a radiating fin on the reverse of the metal base plate or the like via a radiating grease there is known a method for soldering one or a plurality of ceramic substrates, to each of which a metal circuit plate having a semiconductor chip soldered thereon is bonded, on a metal base plate (a radiating plate) or a composite material and for mounting a radiating fin on the reverse of the metal base plate or the like via a radiating grease.
  • an aluminum bonding member comprises: an aluminum member of aluminum or an aluminum alloy; and a tubular member extending in the aluminum member, both of opening end portions of the tubular member being open to the outside of the aluminum member, wherein the tubular member is made of a material which does not melt at a temperature close to a melting point of aluminum or the aluminum alloy, and at least part of an outer peripheral surface of a portion of the tubular member extending in the aluminum member contacts the aluminum member.
  • the at least part of the outer peripheral surface of the portion of the tubular member extending in the aluminum member may contact the aluminum member to be bonded thereto.
  • the whole outer peripheral surface of the portion of the tubular member extending in the aluminum member may contact the aluminum member to be bonded thereto.
  • the tubular member may be made of a metal containing at least one element, which is selected from the group consisting of tungsten, molybdenum, titanium, zirconium, iron, copper and nickel, as a main component.
  • the tubular member may be made of a ceramic or carbon.
  • the tubular member may be made of stainless, SKD or an molybdenum alloy.
  • the tubular member may be made of a high-melting-point sintered material.
  • the high-melting-point sintered material may be a molybdenum sintered material or a tungsten sintered material.
  • a ceramic substrate which has a metal circuit plate bonded thereto, may be bonded to one side of the aluminum bonding member.
  • ceramic substrates, each of which has a metal circuit plate bonded thereto, may be bonded to both sides of the aluminum bonding member, respectively.
  • the aluminum bonding member may be used as a cooling member.
  • a method for producing an aluminum bonding member comprising the steps of: preparing a tubular member of a material which does not melt at a temperature close to a melting point of aluminum or an aluminum alloy; putting the tubular member in a die so that opening end portions of the tubular member are open to the outside of the die; injecting a molten metal of aluminum or the aluminum alloy into the die; and cooling and solidifying the injected molten metal to cause a portion of the tubular member in the die to contact a solid aluminum member.
  • the portion of the tubular member in the die may be caused to contact the solid aluminum member to be bonded thereto.
  • the method may further comprise a step of arranging a metal/ceramic circuit board, which has a metal circuit plate bonded to a ceramic substrate, on the die so as to close an opening portion formed in a top face of the die, before injecting the molten metal, so that the metal/ceramic circuit board contacts the solid aluminum member to be bonded thereto when the portion of the tubular member in the die is caused to contact the solid aluminum member to be bonded thereto.
  • the method may further comprise a step of arranging a ceramic substrate in the die before injecting the molten metal, so that the solid aluminum member is caused to contact to one side of the ceramic substrate to be bonded thereto while an aluminum circuit plate is caused to contact the other side of the ceramic substrate to be bonded thereto when the portion of the tubular member in the die is caused to contact the solid aluminum member to be bonded thereto.
  • the ceramic substrate may be caused to contact each of both sides of the solid aluminum member to be bonded thereto.
  • a power module wherein a metal circuit plate is bonded to one side of a ceramic substrate, and the above described aluminum bonding member is bonded to the other side of the ceramic substrate.
  • FIG. 1 is a perspective view of the first preferred embodiment of an aluminum bonding member according to the present invention
  • FIG. 2 is a perspective view of a die used for producing the aluminum bonding member of FIG. 1 ;
  • FIG. 3 is an exploded perspective view of the die of FIG. 2 ;
  • FIG. 4 is a perspective view of an aluminum bonding member wherein a copper/ceramic circuit board is bonded directly thereto, as the second preferred embodiment of an aluminum bonding member according to the present invention
  • FIG. 5 is a perspective view of a die used for producing the aluminum bonding member of FIG. 4 ;
  • FIG. 6 is an exploded perspective view of the die of FIG. 5 ;
  • FIG. 7 is a perspective view of an aluminum bonding member wherein an aluminum/ceramic circuit board is bonded directly thereto, as the third preferred embodiment of an aluminum bonding member according to the present invention.
  • FIG. 8 is a perspective view of a die used for producing the aluminum bonding member of FIG. 7 ;
  • FIG. 9 is an exploded perspective view of the die of FIG. 8 , wherein dotted lines show aluminum circuit plate forming portions formed in the bottom of a lid member;
  • FIG. 10 is a sectional view of the die of FIG. 8 , which shows a state that a tubular member and a ceramic substrate are put in a die, and wherein dotted lines show inlets and passages for injecting molten aluminum and vent holes and passages for discharging gases;
  • FIG. 11 is a side view of an aluminum bonding member wherein aluminum/ceramic circuit boards are bonded directly to both sides thereof, as a modified example of the third preferred embodiment of an aluminum bonding member according to the present invention.
  • FIG. 12 is a sectional view of a die used for producing the aluminum bonding member of FIG. 11 .
  • an aluminum bonding member 10 in this preferred embodiment comprises an aluminum member 12 having a substantially rectangular planar shape, and a substantially U-shaped tubular member 14 having a substantially annular sectional shape. Both of the opening end portions of the tubular member 14 protrude from the aluminum member 12 to be open to the outside. A portion of the tubular member 14 between the opening end portions is arranged in the aluminum member 12 to contact the aluminum member 12 to be bonded directly thereto.
  • a stainless pipe having a diameter of about 10 mm may be used.
  • a pipe of a metal such as molybdenum (Mo) or copper (Cu)
  • a pipe of a ceramic such as alumina or zirconia
  • a gaseous or liquid cooling medium flows through the tubular member 14 to cool the aluminum member 10 . Therefore, it is always required that the tubular member 14 is substantially U-shaped, and the tubular member 14 may have any one of such shapes that the tubular member 14 extends in a wide region of the aluminum bonding member 10 .
  • Such an aluminum bonding member 10 may be produced by using, e.g., a die 20 shown in FIGS. 2 and 3 .
  • the die 20 is formed of a material, such as carbon, which is capable of being easily and inexpensively formed.
  • the die 20 comprises a lower die member 22 , an upper die member 24 and a lid member 26 .
  • the lower die member 22 comprises a plate-shaped bottom portion 22 a having a substantially rectangular planar shape, and a side wall portion 22 b extending from the peripheral portion of the bottom portion 22 b vertically upwards.
  • the top face of the side wall portion 22 b has two substantially semi-circular recessed portions 22 c corresponding to the lower half of the tubular member 14 .
  • the upper die member 24 has such a shape that the side wall portion 22 b of the lower die member 22 is extended vertically upwards when the upper die member 24 is arranged on the lower die member 22 .
  • the bottom face of the upper die member 24 has two substantially semi-circular recessed portions 24 a corresponding to the upper half of the tubular member 14 .
  • the two recessed portions 24 a face the two recessed portion 22 c of the lower die member 22 to form substantially circular through holes 28 for allowing the tubular member 14 to pass therethrough.
  • the lid member 26 is a member for closing the substantially rectangular upper opening portion of the upper die member 24 , and has a substantially rectangular planar shape which corresponds to that of the lower die member 22 and upper die member 24 .
  • an inlet 26 a for injecting molten aluminum into the die 20 is formed in one corner portion of the lid member 26 .
  • a vent hole 26 b for discharging gases from the die 20 is formed in a corner portion of the lid member 26 facing the corner portion having the inlet 26 a .
  • the lid member 26 is arranged on the upper die member 24 after the upper die member 24 is arranged on the lower die member 22 , a space having a shape corresponding to the aluminum member 12 is formed in the die 20 . Furthermore, the lid member 26 may be integrated with the upper die member 24 . It is not always required that the inlet 26 a and the vent hole 26 b are formed in the lid member 26 , and they may be suitably formed in other portions by design.
  • the substantially U-shaped tubular member 14 is put in the lower die member 22 so that the opening end portions of the tubular member 14 protrude to the outside of the die 20 via the through holes 28 , and then, the upper die member 24 is arranged on the lower die member 22 to be fixed thereto.
  • the die 20 is put in a nitrogen atmosphere furnace having an oxygen concentration of 100 ppm or less to be heated to 750° C., and molten aluminum having a purity of 99.99% heated to the same temperature as that of the die 20 to be melted is injected into the die 20 from the inlet 26 a by means of a carbon cylinder. Since the lid member 26 has the vent hole 26 b , the molten aluminum can be injected without applying a high pressure. Finally, the molten aluminum is injected into in the die 20 to such an extent that the molten aluminum overflows via the vent hole 26 b , so that the molten aluminum is filled in the die 20 .
  • the die 20 is cooled to solidify aluminum to bond a solid aluminum member to the tubular member 14 , and then, cooled to a room temperature.
  • the aluminum bonding member 10 thus obtained is taken out of the die 20 . Thereafter, portions of the aluminum bonding member 10 corresponding to the inlet 26 a and vent hole 26 b are removed by cutting work or the like to flatten the surface of the aluminum bonding member 10 .
  • the aluminum bonding member 10 can be used as a cooling member for the metal/ceramic circuit board.
  • a predetermined portion of the aluminum bonding member 10 is plated with an Ni—P alloy and if a metal/ceramic circuit board is soldered on the plated portion, it is possible to obtain a more excellent and stable cooling power than that of an air cooling fin.
  • an aluminum bonding member 100 in this preferred embodiment comprises an aluminum member 102 having a substantially rectangular planar shape, and a substantially U-shaped tubular member 104 having a substantially annular sectional shape. Both of the opening end portions of the tubular member 104 protrude from the aluminum member 102 to be open to the outside. A portion of the tubular member 104 between the opening end portions is arranged in the aluminum member 102 to contact the aluminum member 102 to be bonded directly thereto.
  • the aluminum bonding member 100 may be used as a cooling member for a copper/ceramic circuit board 110 wherein a copper circuit plate 114 is bonded to one side of a ceramic substrate 112 , if it is bonded directly to the other side of the ceramic substrate 112 of the copper/ceramic circuit board 110 . Furthermore, the bonding of the ceramic substrate 112 to the copper circuit plate 114 of the copper/ceramic circuit board 110 may be carried out by any one of direct bonding and brazing methods, if the bonding portion of the ceramic substrate 112 to the copper circuit plate 114 does not melt during the bonding using molten aluminum.
  • Such an aluminum bonding member 100 bonded directly to the copper/ceramic circuit board 110 may be produced by using, e.g., a die 120 shown in FIGS. 5 and 6 .
  • the die 120 is formed of a material, such as carbon, which is capable of being easily and inexpensively formed.
  • the die 120 comprises a lower die member 122 , an upper die member 124 and a lid member 126 .
  • the lower die member 122 comprises a plate-shaped bottom portion 122 a having a substantially rectangular planar shape, and a side wall portion 122 b extending from the peripheral portion of the bottom portion 122 b vertically upwards.
  • the top face of the side wall portion 122 b has two substantially semi-circular recessed portions 122 c corresponding to the lower half of the tubular member 104 .
  • the upper die member 124 has such a shape that the side wall portion 122 b of the lower die member 122 is extended vertically upwards when the upper die member 124 is arranged on the lower die member 122 .
  • the bottom face of the upper die member 124 has two substantially semi-circular recessed portions 124 a corresponding to the upper half of the tubular member 104 .
  • the two recessed portions 124 a face the two recessed portion 122 c of the lower die member 122 to form two substantially circular through holes 128 for allowing the tubular member 104 to pass therethrough.
  • the lid member 126 is a member for closing a portion near the peripheral portion of the substantially rectangular upper opening portion of the upper die member 124 , and has a substantially rectangular planar shape which corresponds to that of the lower die member 122 and upper die member 124 .
  • an inlet 126 a for injecting molten aluminum into the die 120 is formed in one corner portion of the lid member 126 .
  • a vent hole 126 b for discharging gases from the die 120 is formed in a corner portion of the lid member 126 facing the corner portion having the inlet 126 a .
  • a substantially central portion of the lid member 126 has a substantially rectangular opening portion 126 c which is slightly smaller than the ceramic substrate 112 .
  • the lid member 126 is formed by combining two separate pieces so that the aluminum bonding member 100 can be easily taken out of the die 120 after the copper/ceramic circuit board 110 is bonded thereto.
  • the lid member 126 is arranged on the upper die member 124 after the upper die member 124 is arranged on the lower die member 122 , a space having a shape corresponding to the aluminum member 102 is formed in the die 120 . Furthermore, it is not always required that the inlet 126 a and the vent hole 126 b are formed in the lid member 126 , and they may be suitably formed in other portions by design.
  • the substantially U-shaped tubular member 104 is put in the lower die member 122 so that the opening end portions of the tubular member 104 protrude to the outside of the die 120 via the through holes 128 , and then, the upper die member 124 is arranged on the lower die member 122 to be fixed thereto.
  • the lid member 126 is arranged on the upper die member 124 to close a portion near the peripheral portion of the upper opening portion of the upper die member 124 .
  • the copper/ceramic circuit board 110 is arranged on and fixed to the lid member 126 so as to close the opening portion 126 C of the lid member 126 .
  • the die 120 is put in a nitrogen atmosphere furnace having an oxygen concentration of 100 ppm or less to be heated to 750° C., and molten aluminum having a purity of 99.99% heated to the same temperature as that of the die 120 to be melted is injected into the die 120 from the inlet 126 a by means of a carbon cylinder. Since the lid member 126 has the vent hole 126 b , the molten aluminum can be injected without applying a high pressure. Finally, the molten aluminum is injected into in the die 120 to such an extent that the molten aluminum overflows via the vent hole 126 b , so that the molten aluminum is filled in the die 120 .
  • the die 120 is cooled to solidify aluminum to bond a solid aluminum member to the tubular member 104 and copper/ceramic circuit board 110 , and then, cooled to a room temperature.
  • the aluminum bonding member 100 thus obtained is taken out of the die 120 .
  • the lid member 126 comprises two pieces capable of being separated from each other, the aluminum bonding member 100 can be easily taken out of the die 120 . Thereafter, portions of the aluminum bonding member 100 corresponding to the inlet 126 a and vent hole 126 b are removed by cutting work or the like to flatten the surface of the aluminum bonding member 100 .
  • the aluminum bonding member can be simply integrated with the copper/ceramic circuit board without using any solders and radiating greases, so that it is possible to produce a copper/ceramic circuit board with an inexpensive cooling system having good characteristics.
  • molten aluminum is caused to contact the die in an atmosphere of an inert gas, such as nitrogen gas.
  • an inert gas such as nitrogen gas.
  • the bonding of the aluminum member 102 to the tubular member 104 is chemically carried out while removing oxide films from the surface of molten aluminum.
  • the bonding of the aluminum member 102 to the ceramic substrate 112 is also chemically carried out. Therefore, it is possible to carry out the bonding using commercially available materials without utilizing the anchor effect which is obtained by forming irregularities on the surface for the bonding.
  • an aluminum/ceramic circuit board may be substituted for the copper/ceramic circuit board 110 .
  • the ceramic substrate 112 preferably contains alumina, aluminum nitride, silicon nitride or silicon carbide as a main component.
  • an aluminum bonding member 200 in this preferred embodiment comprises an aluminum member 202 having a substantially rectangular planar shape, and a substantially U-shaped tubular member 204 having a substantially annular sectional shape. Both of the opening end portions of the tubular member 204 protrude from the aluminum member 202 to be open to the outside. A portion of the tubular member 204 between the opening end portions is arranged in the aluminum member 202 to contact the aluminum member 202 to be bonded directly thereto.
  • the aluminum bonding member 200 may be used as a cooling member for an aluminum/ceramic circuit board 210 wherein an aluminum circuit plate 214 is bonded to one side of a ceramic substrate 212 , if it is bonded directly to the other side of the ceramic substrate 212 of the aluminum/ceramic circuit board 210 .
  • Such an aluminum bonding member 200 bonded directly to the aluminum/ceramic circuit board 210 may be produced by using, e.g., a die 220 shown in FIGS. 8 through 10 .
  • the bonding of the aluminum circuit plate 214 to the ceramic substrate 212 is carried out simultaneously with the bonding of the aluminum bonding member 210 , since the material of the circuit plate is aluminum and since the aluminum circuit plate 214 melts during the injection of molten aluminum unless special measures, such as measures to cool the aluminum circuit plate 214 , are taken if the aluminum/ceramic circuit board 210 is bonded to the aluminum bonding member 200 after the aluminum circuit plate 214 is previously bonded to the ceramic substrate 212 by the same method as that in the second preferred embodiment.
  • the die 220 is formed of a material, such as carbon, which is capable of being easily and inexpensively formed. As shown in FIGS. 8 through 10 , the die 220 comprises a lower die member 222 , an upper die member 224 and a lid member 226 .
  • the lower die member 222 comprises a plate-shaped bottom portion 222 a having a substantially rectangular planar shape, and a side wall portion 222 b extending from the peripheral portion of the bottom portion 222 b vertically upwards.
  • the top face of the side wall portion 222 b has two substantially semi-circular recessed portions 222 c corresponding to the lower half of the tubular member 204 .
  • the upper die member 224 comprises a substantially rectangular plate-shaped top portion 224 a having the same planar shape and size as those of the lower die member 222 , and a side wall portion 224 b which extends from the peripheral portion of the top portion 224 b vertically downwards and which has such a shape that the side wall portion 222 b of the lower die member 222 is extended vertically upwards when the upper die member 224 is arranged on the lower die member 222 .
  • the bottom face of the side wall portion 224 b of the upper die member 224 has two substantially semi-circular recessed portions 224 c corresponding to the upper half of the tubular member 204 .
  • the two recessed portions 224 c face the two recessed portion 222 c of the lower die member 222 to form two substantially circular through holes 228 for allowing the tubular member 204 to pass therethrough.
  • a passage 224 d for injecting molten aluminum into a space defined by the lower die member 222 and the upper die member 224 .
  • a passage 224 e for discharging gases from the space defined by the lower die member 222 and the upper die member 224 .
  • a substantially central portion of the top portion 224 a of the upper die member 224 has a substantially rectangular opening portion 224 f which is slightly smaller than the ceramic substrate 212 . Since the opening portion 224 f is thus smaller than the ceramic substrate 212 , the upper die member 224 is formed by combining two separate pieces so that the aluminum bonding member 200 can be easily taken out of the die 220 after the aluminum/ceramic circuit board 210 is bonded thereto.
  • the lid member 226 is a substantially rectangular member having the same planar shape and size as those of the upper die member 224 .
  • a recessed portion which substantially has the same shape as that of the ceramic substrate 212 and which is slightly greater than the ceramic substrate 212 , is formed as a ceramic substrate housing portion.
  • two recessed portions are formed as aluminum circuit plate forming portions for forming the aluminum circuit plates 214 on the top face of the ceramic substrate 212 .
  • the lid member 226 in one corner portion of the top portion of the lid member 226 , there is formed an inlet 226 a which is communicated with the passage 224 d of the upper die member 224 for injecting molten aluminum into the space defined by the lower die member 222 and the upper die member 224 .
  • a vent hole 226 b which is communicated with the passage 224 e of the upper die member 224 for discharging gases from the space defined by the lower die member 222 and the upper die member 224 .
  • the lid member 226 has inlets 226 c for injecting molten aluminum into each of the aluminum circuit plate forming portions, and vent holes 226 d for discharging gases from each of the aluminum circuit plate forming portions.
  • the substantially U-shaped tubular member 204 is put in the lower die member 222 so that the opening end portions of the tubular member 204 protrude to the outside of the die 220 via the through holes 228 , and then, the upper die member 224 is arranged on the lower die member 222 to be fixed thereto.
  • the ceramic substrate 212 is arranged on the upper die member 224 so as to close the opening portion 224 f of the upper die member 224 , and then, the lid member 226 is arranged on the upper die member 224 to be fixed thereto.
  • the die 220 is put in a nitrogen atmosphere furnace having an oxygen concentration of 100 ppm or less to be heated to 750° C., and molten aluminum having a purity of 99.99% heated to the same temperature as that of the die 220 to be melted is injected into the die 220 from the inlets 226 a and 226 c by means of a carbon cylinder. Since the lid member 226 has the vent holes 226 b and 226 d, the molten aluminum can be injected without applying a high pressure. Finally, the molten aluminum is injected into in the die 220 to such an extent that the molten aluminum overflows via the vent holes 226 b and 226 d, so that the molten aluminum is filled in the die 220 .
  • the die 220 is cooled to solidify aluminum to bond a solid aluminum member to the tubular member 204 and ceramic substrate 212 , and then, cooled to a room temperature.
  • the aluminum bonding member 200 thus obtained is taken out of the die 220 .
  • the upper die member 224 comprises two pieces capable of being separated from each other, the aluminum bonding member 200 can be easily taken out of the die 220 .
  • portions of the aluminum bonding member 200 corresponding to the inlets 226 a , 226 c and vent holes 226 b , 226 d are removed by cutting work or the like to flatten the surface of the aluminum bonding member 200 .
  • the metal to be filled in the die is preferably aluminum or an aluminum alloy which more preferably has a Vickers hardness of 40 or less in order to reduce stress caused by a difference in thermal expansion between the ceramic and the metal. If the Vickers hardness of the metal exceeds 40, there are some cases where cracks may be produced in the ceramic substrate during the bonding and/or during heat cycles applied thereto.
  • the aluminum/ceramic circuit boards 210 may be bonded directly to both sides of the aluminum bonding member 200 .
  • Such an aluminum bonding member 200 having the aluminum/ceramic circuit boards 210 bonded directly to both sides thereof may be produced by using a lower die member 230 and a bottom die member 232 as shown in FIG. 12 in place of the lower die member 222 of FIG. 10 .
  • molten aluminum injected into the die is designed to pass through a space (not shown), which is defined between the bottom die member 232 and the ceramic substrate 212 arranged therein, to bond the aluminum circuit boards 214 directly to the opposite surface of the ceramic substrate 212 . If the aluminum/ceramic circuit boards 210 are thus bonded to both sides of the aluminum bonding member 200 , the size of a power module can be compact.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
US11/096,301 2004-03-31 2005-03-31 Aluminum bonding member and method for producing same Abandoned US20050217823A1 (en)

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CN103503581A (zh) * 2011-03-23 2014-01-08 同和金属技术有限公司 金属-陶瓷接合基板及其制造方法
US20170055369A1 (en) * 2015-08-17 2017-02-23 Eaton Corporation Ceramic coated flow channels for electrical isolation and thermal transfer
US20200003497A1 (en) * 2018-06-29 2020-01-02 The Boeing Company Additively manufactured heat transfer device
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JP2011073194A (ja) * 2009-09-29 2011-04-14 Dowa Metaltech Kk 金属−セラミックス接合基板およびその製造方法
JP5686606B2 (ja) * 2010-01-12 2015-03-18 日本軽金属株式会社 フィン一体型基板の製造方法およびフィン一体型基板
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JP7157609B2 (ja) * 2018-09-27 2022-10-20 Ｄｏｗａメタルテック株式会社 金属－セラミックス接合基板およびその製造方法
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US20070227697A1 (en) * 2006-03-30 2007-10-04 Dowa Metaltech Co., Ltd. Heat radiator
US20090141451A1 (en) * 2007-11-21 2009-06-04 Shogo Mori Heat dissipation apparatus
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US20130032230A1 (en) * 2010-04-13 2013-02-07 Danfoss Silicon Power Gmbh Flow distributor
US20120193081A1 (en) * 2011-01-27 2012-08-02 Asia Vital Components Co., Ltd. Heat-dissipation structure and manufacturing method thereof
CN103503581A (zh) * 2011-03-23 2014-01-08 同和金属技术有限公司 金属-陶瓷接合基板及其制造方法
US20140057131A1 (en) * 2011-03-23 2014-02-27 Dowa Metaltech Co., Ltd. Metal/ceramic bonding substrate and method for producing same
US9713253B2 (en) * 2011-03-23 2017-07-18 Dowa Metaltech Co., Ltd. Metal/ceramic bonding substrate and method for producing same
US20130048253A1 (en) * 2011-08-29 2013-02-28 Asia Vital Components Co., Ltd. Heat dissipation device and method of manufacturing same
CN102970849A (zh) * 2011-08-31 2013-03-13 株式会社安川电机 电子部件冷却组件及电力变换装置
US8964389B2 (en) 2011-08-31 2015-02-24 Kabushiki Kaisha Yaskawa Denki Electronic component cooling unit and power converting device
US20170055369A1 (en) * 2015-08-17 2017-02-23 Eaton Corporation Ceramic coated flow channels for electrical isolation and thermal transfer
US11240943B2 (en) * 2015-08-17 2022-02-01 Eaton Intelligent Power Limited Ceramic coated flow channels for electrical isolation and thermal transfer
US20200003497A1 (en) * 2018-06-29 2020-01-02 The Boeing Company Additively manufactured heat transfer device
US11015872B2 (en) * 2018-06-29 2021-05-25 The Boeing Company Additively manufactured heat transfer device
US11885579B2 (en) 2018-06-29 2024-01-30 The Boeing Company Additively manufactured heat transfer device
CN112893808A (zh) * 2019-11-19 2021-06-04 Mh技术开发有限公司 使用热管制造冷却装置的方法

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JP4543279B2 (ja) 2010-09-15
US20120152482A1 (en) 2012-06-21
JP2005317890A (ja) 2005-11-10
EP1585173B1 (de) 2018-09-05
US8745841B2 (en) 2014-06-10
EP1585173A2 (de) 2005-10-12

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