US20040011654A1 - Method of copper plating small diameter hole - Google Patents

Method of copper plating small diameter hole Download PDF

Info

Publication number
US20040011654A1
US20040011654A1 US10/416,304 US41630403A US2004011654A1 US 20040011654 A1 US20040011654 A1 US 20040011654A1 US 41630403 A US41630403 A US 41630403A US 2004011654 A1 US2004011654 A1 US 2004011654A1
Authority
US
United States
Prior art keywords
small diameter
diameter hole
copper
copper plating
set forth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/416,304
Other languages
English (en)
Inventor
Kenji Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD. reassignment SHINKO ELECTRIC INDUSTRIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAMURA, KENJI
Publication of US20040011654A1 publication Critical patent/US20040011654A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning

Definitions

  • the present invention relates to a method of copper plating a small diameter hole.
  • the reverse electrolysis current density required is about 1 to 5 times the regular electrolysis current density, so a large capacity power supply is required.
  • an object of the present invention is to provide a method of copper plating a small diameter hole not requiring a high precision, large capacity pulse power supply and therefore achieving a reduction in the capital cost and enabling the inside of the small diameter hole to be plated well.
  • the method of copper plating a small diameter hole according to the present invention is a method of copper plating a small diameter hole which uses a copper sulfate plating solution containing copper sulfate, sulfuric acid, chlorine ions, a sulfur compound, and a surfactant to copper plate the inside of a small diameter hole of an object being plated having a small diameter hole by the PPR method, characterized by performing reverse electrolysis by a range of current density of 0.1 to 1 A/dm 2 to peel off a sulfur compound near the opening of the small diameter hole in the sulfur compound adsorbed to the object being plated so as to keep the polarization resistance in the small diameter hole at the time of regular electrolysis lower than that near the opening of the small diameter hole and form a copper plating film of a uniform thickness inside the small diameter hole.
  • the method further preferably comprises, at the time of said reverse electrolysis, performing two-stage reverse electrolysis consisting of performing a first half of reverse electrolysis by a high current density and performing a second half of reverse electrolysis by a current density lower than the first half.
  • the method performs the regular electrolysis in several tens to several hundreds of seconds and performs the reverse electrolysis in several seconds to several tens of seconds.
  • the method preferably performs the regular electrolysis in a range of current density of 1 to 2 A/dm 2 .
  • a low electrical resistance, high copper concentration copper sulfate plating solution set to a sulfuric acid concentration of 150 to 250 g/l and a concentration of copper sulfate of 130 to 200 g/l. Further, a copper sulfate plating solution set to a sulfuric acid concentration of around 200 g/l and a concentration of copper sulfate of around 150 g/l is preferable in terms of safety.
  • FIG. 1 is a graph of the relationship between the sulfuric acid concentration and the resistance of a plating solution.
  • FIG. 2 is a graph of the relationship between the sulfuric acid concentration and the saturation copper sulfate concentration.
  • FIG. 3 is a graph of the relationship between the reverse electrolysis potential and the magnitude of the polarization resistance at the time of regular electrolysis.
  • FIG. 4 is a schematic view of a current waveform in an embodiment of the present invention.
  • FIG. 5 is a sectional photograph of a through hole of Example 1.
  • FIG. 6 is a sectional photograph of a through hole of Example 2.
  • FIG. 7 is a sectional photograph of a through hole of Example 3.
  • FIG. 8 is a sectional photograph of a through hole of Example 4.
  • FIG. 9 is a sectional photograph of a through hole of Comparative Example 1.
  • FIG. 10 is a sectional photograph of a through hole of Comparative Example 2.
  • the copper sulfate plating solution is comprised of copper sulfate as a copper source, sulfuric acid for adjusting the conductivity, chlorine ions (chloride) and a surfactant as suppressants, and a sulfur compound functioning as a plating accelerator.
  • FIG. 1 is a graph of the relationship between the sulfuric acid concentration and copper sulfate concentration and the resistance of a plating solution and compares the case of an electrical resistance of 5% sulfuric acid as “1”. Further, FIG. 2 is a graph of the relationship between the sulfuric acid concentration and the saturation copper sulfate concentration.
  • the electrical resistance is low and substantially stable. Therefore, to obtain a plating solution with a low electrical resistance, it is preferable to make the sulfuric acid concentration 150 g/l or more. Further, to make a plating with a high copper concentration, it is preferable to make the sulfuric acid concentration 250 g/l or less.
  • chlorine ion source hydrochloric acid, sodium chloride, potassium chloride, ammonium chloride, etc. may be mentioned. These may be used alone or in combination.
  • the amount added is, as chlorine ions, one in the range of 10 to 200 mg/l, but around 35 mg/l is preferable.
  • the sulfur compound is not particularly limited, but sodium 3-mercapto-1-propane sulfonate or sodium 2-mercaptoethane sulfonate, bis-(3-sulfopropyl)-disulfide disodium, or another sulfur compound may be preferably used alone or in combination.
  • the surfactant is also not particularly limited, but polyethylene glycol, polypropylene glycol, or another surfactant may be used alone or in combination.
  • the amount added of the surfactant used may be in the range of around several mg/l to 10 g/l.
  • the surfactant is present together with the chlorine ions, so increases the polarization resistance at the cathode.
  • the sulfur compound reduces the polarization resistance at the cathode and acts as an accelerator.
  • the polarization resistance at the cathode surface depends on the balance of the amounts of adsorption of these additives.
  • the sulfur compound is adsorbed at the surface of the object being plated and has a strong effect of reducing the polarization resistance at the adsorbing surface. Therefore, suppression of the amount of adsorption of the sulfur compound leads to control of the polarization resistance.
  • the polarization resistance at the surface of the object being plated (circuit board etc.) or the opening side of the small diameter hole is controlled to be high and the polarization resistance inside the small diameter hole to be low so as to form overall a plating film with a uniform thickness.
  • the electrical resistance of a plating system is defined as the sum of the polarization resistance and the electrical resistance of the plating solution.
  • the electrical resistance of the plating solution sufficiently small with respect to the polarization resistance, the electrical resistance of the plating system and therefore the current inversely proportional to the same will greatly depend on the magnitude of the polarization resistance.
  • the sulfuric acid concentration in the copper plating solution is made high and the electrical resistance of the plating solution is kept low so as to facilitate control of the polarization resistance.
  • the polarization resistance Rc was defined as:
  • FIG. 3 is a graph obtained by measuring the magnitudes of the polarization resistances when performing reverse electrolysis on a circuit board by various potentials for 10 sec, then performing regular electrolysis. Note that the polarization resistance shows the polarization resistance at the front surface of the object being plated (circuit board). The polarization resistance inside a small diameter hole is naturally lower than the polarization resistance at the surface.
  • the current density for dealing with the above potential is 0.1A to 1/dm 2 .
  • the magnitude of the polarization resistance cannot be measured inside a small diameter hole of an object being plated, but since reverse electrolysis has almost no effect inside a small diameter hole, it may be considered that there is almost no peeling of the sulfur compound inside the small diameter hole other than near the opening. Therefore, the polarization resistance at the time of regular electrolysis inside a small diameter hole is maintained low as it is, current flows into the small diameter hole, and the throwing power is improved even inside the small diameter hole.
  • the setting of the current density at the time of reverse electrolysis, the reverse electrolysis time, the current density at the time of regular electrolysis, and the setting of the electrolysis time may be performed, while measuring the thickness, in accordance with the object being plated.
  • FIG. 4 schematically shows the current waveform of PPR plating in this embodiment.
  • the optimal current density at the time of reverse electrolysis is 0.1 to 0.5 A/dm 2 , while the optimal electrolysis time is around 1 to 10 seconds.
  • the improvement in the effects by performing the reverse electrolysis in two stages is believed to be due to the following reason: That is, in the first half (first stage) reverse electrolysis, the peeling action at the outside of a through hole is strong and the peeling action at the inside of the through hole is weak. In the second half (second stage) reverse electrolysis, the potential for the peeling is extremely weak, so the outside of the through hole is just slightly peeled, while the inside is not subject to almost any peeling action and rather adsorption of the sulfur compound proceeds.
  • the surface compound at the outside of the through hole is reliably peeled, while in the second stage reverse electrolysis, the sulfur compound is adsorbed at the inside of the through hole while the peeled state of the outside of the through hole is maintained due to the weak peeling action.
  • the difference in adsorption and concentration of the sulfur compound at the outside and inside of the through hole becomes greater and a larger difference in polarization resistance occurs.
  • the current density at the time of regular electrolysis should be around 1.5 A/dm 2 (not particularly limited to this. May be decided viewing the throwing power of the plating) and the electrolysis time around 50 to 200 sec.
  • the copper sulfate plating solution used was one of the following composition in all cases: Copper sulfate 5-hydrate 150 g/l Sulfuric acid 200 g/l Polyethylene glycol 4000 3 g/l SPS 1 mg/l Chlorine ions 35 mg/l
  • a circuit board of a thickness of 0.8 mm having through holes of opening diameters of 0.1 mm was plated by the PPR method under the following conditions:
  • the thickness ratio: (thickness of center part of through hole/thickness of surface of substrate) ⁇ 100 was 91.3%.
  • a circuit board of a thickness of 0.8 mm having through holes of opening diameters of 0.15 mm was plated by the PPR method under the following conditions:
  • the thickness ratio was 101.4%.
  • a circuit board of a thickness of 0.8 mm having through holes of opening diameters of 0.1 mm was plated by the PPR method under the following conditions:
  • Reverse electrolysis 1 Current density: 0.5 A/dm 2 , electrolysis time: 5 sec
  • Reverse electrolysis 2 Current density: 0.1 A/dm 2 , electrolysis time: 5 sec
  • the thickness ratio was 109.8%.
  • a circuit board of a thickness of 0.8 mm having through holes of opening diameters of 0.15 mm was plated by the PPR method under the following conditions:
  • Reverse electrolysis 1 Current density: 0.5 A/dm 2 , electrolysis time: 5 sec
  • Reverse electrolysis 2 Current density: 0.1 A/dm 2 , electrolysis time: 5 sec
  • the thickness ratio was 110.8%.
  • the thickness ratio was 53.9%.
  • the thickness ratio was 54.8%.
  • FIG. 5 to FIG. 10 are sectional photographs (magnification 75 ⁇ ) of through holes.
  • FIGS. 5, 6, 7 , and 8 show through holes of Examples 1, 2, 3, and 4, while FIGS. 9 and 10 show through holes of Comparative Examples 1 and 2.
  • the thickness ratio (throwing power) became substantially 100% and it was possible to form a copper plating film of a uniform thickness on the surface and inside the small diameter hole.
  • the result is that the plating thickness of the inside of the small diameter hole becomes greater than the plating thickness on the surface. In this case, if extending the plating time, the inside of the small diameter hole can be buried by the plating.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
US10/416,304 2001-10-16 2002-10-09 Method of copper plating small diameter hole Abandoned US20040011654A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001317878 2001-10-16
JP2001-317878 2001-10-16
PCT/JP2002/010483 WO2003033775A1 (fr) 2001-10-16 2002-10-09 Procede de cuivrage de trous a petit diametre

Publications (1)

Publication Number Publication Date
US20040011654A1 true US20040011654A1 (en) 2004-01-22

Family

ID=19135677

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/416,304 Abandoned US20040011654A1 (en) 2001-10-16 2002-10-09 Method of copper plating small diameter hole

Country Status (6)

Country Link
US (1) US20040011654A1 (zh)
JP (1) JP4148895B2 (zh)
KR (1) KR20040045390A (zh)
CN (1) CN1283848C (zh)
TW (1) TW561808B (zh)
WO (1) WO2003033775A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040074775A1 (en) * 2002-10-21 2004-04-22 Herdman Roderick Dennis Pulse reverse electrolysis of acidic copper electroplating solutions
WO2006032346A1 (en) * 2004-09-20 2006-03-30 Atotech Deutschland Gmbh Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper
WO2006065220A1 (en) * 2004-12-14 2006-06-22 Polymer Kompositer I Göteborg Ab Pulse-plating method and apparatus
US8637397B2 (en) 2008-10-16 2014-01-28 Dai Nippon Printing Co., Ltd Method for manufacturing a through hole electrode substrate
TWI454422B (zh) * 2012-04-12 2014-10-01 Nat Univ Tsing Hua 具高密度雙晶的奈米銅導線製造方法
US9930779B2 (en) 2016-04-28 2018-03-27 Tdk Corporation Through wiring substrate
US10103029B2 (en) 2011-01-26 2018-10-16 Macdermid Enthone Inc. Process for filling vias in the microelectronics
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632552B1 (ko) * 2004-12-30 2006-10-11 삼성전기주식회사 내부 비아홀의 필 도금 구조 및 그 제조 방법
US20060226014A1 (en) * 2005-04-11 2006-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing
JP4764718B2 (ja) 2005-12-28 2011-09-07 新光電気工業株式会社 スルーホールの充填方法
JP5428280B2 (ja) * 2008-10-16 2014-02-26 大日本印刷株式会社 貫通電極基板及び貫通電極基板を用いた半導体装置
JP6161863B2 (ja) * 2010-12-28 2017-07-12 株式会社荏原製作所 電気めっき方法
CN102443828B (zh) * 2011-09-23 2014-11-19 上海华力微电子有限公司 一种在半导体硅片的通孔中进行电镀铜的方法
CN104109886A (zh) * 2013-04-22 2014-10-22 广东致卓精密金属科技有限公司 一种超填孔镀铜工艺
JP7087760B2 (ja) * 2018-07-18 2022-06-21 住友金属鉱山株式会社 銅張積層板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517059A (en) * 1981-07-31 1985-05-14 The Boeing Company Automated alternating polarity direct current pulse electrolytic processing of metals
US5486280A (en) * 1994-10-20 1996-01-23 Martin Marietta Energy Systems, Inc. Process for applying control variables having fractal structures
US6099711A (en) * 1995-11-21 2000-08-08 Atotech Deutschland Gmbh Process for the electrolytic deposition of metal layers
US6261433B1 (en) * 1998-04-21 2001-07-17 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US20010013472A1 (en) * 2000-02-01 2001-08-16 Kenji Nakamura Method of plating for filling via holes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0356696A (ja) * 1989-07-24 1991-03-12 Canon Inc 湿式電解処理装置
JPH07336017A (ja) * 1994-06-08 1995-12-22 Hitachi Ltd 電流反転電解法による薄膜回路製造方法ならびにそれを用いた薄膜回路基板、薄膜多層回路基板および電子回路装置
JPH1143797A (ja) * 1997-07-25 1999-02-16 Hideo Honma ビアフィリング方法
US6071398A (en) * 1997-10-06 2000-06-06 Learonal, Inc. Programmed pulse electroplating process
JP4132273B2 (ja) * 1998-08-25 2008-08-13 日本リーロナール有限会社 充填されたブラインドビアホールを有するビルドアッププリント配線板の製造方法
MY144573A (en) * 1998-09-14 2011-10-14 Ibiden Co Ltd Printed circuit board and method for its production
JP4339980B2 (ja) * 2000-03-14 2009-10-07 沖プリンテッドサーキット株式会社 電解メッキ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517059A (en) * 1981-07-31 1985-05-14 The Boeing Company Automated alternating polarity direct current pulse electrolytic processing of metals
US5486280A (en) * 1994-10-20 1996-01-23 Martin Marietta Energy Systems, Inc. Process for applying control variables having fractal structures
US6099711A (en) * 1995-11-21 2000-08-08 Atotech Deutschland Gmbh Process for the electrolytic deposition of metal layers
US6261433B1 (en) * 1998-04-21 2001-07-17 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US20010013472A1 (en) * 2000-02-01 2001-08-16 Kenji Nakamura Method of plating for filling via holes

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040074775A1 (en) * 2002-10-21 2004-04-22 Herdman Roderick Dennis Pulse reverse electrolysis of acidic copper electroplating solutions
WO2006032346A1 (en) * 2004-09-20 2006-03-30 Atotech Deutschland Gmbh Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper
US20090236230A1 (en) * 2004-09-20 2009-09-24 Bert Reents Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper
US9445510B2 (en) * 2004-09-20 2016-09-13 Atotech Deutschland Gmbh Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper
US9526183B2 (en) 2004-09-20 2016-12-20 Atotech Deutschland Gmbh Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper
WO2006065220A1 (en) * 2004-12-14 2006-06-22 Polymer Kompositer I Göteborg Ab Pulse-plating method and apparatus
US8637397B2 (en) 2008-10-16 2014-01-28 Dai Nippon Printing Co., Ltd Method for manufacturing a through hole electrode substrate
US10103029B2 (en) 2011-01-26 2018-10-16 Macdermid Enthone Inc. Process for filling vias in the microelectronics
US10541140B2 (en) 2011-01-26 2020-01-21 Macdermid Enthone Inc. Process for filling vias in the microelectronics
TWI454422B (zh) * 2012-04-12 2014-10-01 Nat Univ Tsing Hua 具高密度雙晶的奈米銅導線製造方法
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
US9930779B2 (en) 2016-04-28 2018-03-27 Tdk Corporation Through wiring substrate

Also Published As

Publication number Publication date
WO2003033775A1 (fr) 2003-04-24
JPWO2003033775A1 (ja) 2005-02-03
JP4148895B2 (ja) 2008-09-10
TW561808B (en) 2003-11-11
CN1476492A (zh) 2004-02-18
CN1283848C (zh) 2006-11-08
KR20040045390A (ko) 2004-06-01

Similar Documents

Publication Publication Date Title
US20040011654A1 (en) Method of copper plating small diameter hole
KR100877923B1 (ko) 전해 구리 도금법
JP4740632B2 (ja) 改善されたメッキ方法
US7575666B2 (en) Process for electrolytically plating copper
US20050121314A1 (en) Electrolytic plating method and device for a wiring board
KR20090052891A (ko) 전도성 중합체의 전착 및 비전도성 기판의 금속화
JP2008031516A (ja) 電解めっき方法
US6977035B2 (en) Method for electrolytic copper plating
WO1989007162A1 (en) Electrochemical processes
JP2009228124A (ja) スルーホールの充填方法
TWI683931B (zh) 電解鍍銅用陽極及使用其之電解鍍銅裝置
JP2006111976A (ja) 酸性銅めっき方法および酸性銅めっき装置
JP3803968B2 (ja) 酸性銅めっき方法および酸性銅めっき装置
JP4457843B2 (ja) 回路基板の製造方法
JP3853671B2 (ja) 電解銅めっき方法
JP3071586B2 (ja) 硫酸銅めっき方法
JP3226627B2 (ja) プリント配線板の硫酸銅めっき方法
WO2002086196A1 (en) Copper acid baths, system and method for electroplating high aspect ratio substrates
JP2009141049A (ja) スルーホールフィリング方法
US20230279577A1 (en) Method of filling through-holes to reduce voids
TW200305661A (en) Electroplating method
JP2914601B2 (ja) 微細厚膜印刷回路基板の導体パターン形成方法
Otani et al. In Printed Wiring Board Manufacturing Use of Waste Etchant as Copper Ion Source for Electroplating Bath
KR101420865B1 (ko) 금속 도금장치
JP2004124111A (ja) 微細Ｖｉａホールを有する基板への電解めっき方法および装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NAKAMURA, KENJI;REEL/FRAME:014434/0160

Effective date: 20030421

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION