US20030063503A1 - Composite integrated semiconductor device - Google Patents
Composite integrated semiconductor device Download PDFInfo
- Publication number
- US20030063503A1 US20030063503A1 US10/235,841 US23584102A US2003063503A1 US 20030063503 A1 US20030063503 A1 US 20030063503A1 US 23584102 A US23584102 A US 23584102A US 2003063503 A1 US2003063503 A1 US 2003063503A1
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- electrical signal
- input
- semiconductor device
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- inputting
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 186
- 239000002131 composite material Substances 0.000 title claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 14
- 238000007789 sealing Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 208000032365 Electromagnetic interference Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45136—One differential amplifier in IC-block form being shown
Definitions
- the present invention relates to a composite integrated semiconductor device in which there are integrated on the same semiconductor substrate different circuits such as an input surge/noise absorbing circuit for absorbing surge or noise, an attenuating/level-shifting circuit providing attenuation or level-shifting operations, and an electrical signal converting circuit providing an electrical signal converting operation.
- the present invention relates to a composite integrated semiconductor device that inputs a signal without surge and noise to a control unit controlling, for example, the electrical equipment of an automobile, with the electric potential level of the signal being matched to the electric potential level of the control unit.
- circuits such as a surge/noise absorbing circuit for absorbing surge or noise, an attenuating/level-shifting circuit providing an attenuating or a level-shifting operation, an electrical signal converting circuit providing an electrical signal converting operation, etc., are connected to an input side of an electrical control unit (ECU) that controls the electrical equipment of, for example, an automobile.
- ECU electrical control unit
- FIG. 16 is a block diagram schematically showing a conventional configuration of these functional circuits.
- a plurality of discrete components 1 such as resistors, capacitors, and diodes are combined, as required, and mounted on a printed circuit board (not shown).
- External electrical input signals 2 are supplied through the discrete components 1 forming the functional circuits and output as electrical output signals 3 , which are supplied to the input terminals 5 of a semiconductor device 4 without surges and noise.
- Each of the signals is matched to a driving electric potential level of the semiconductor device 4 .
- the above object can be attained by a composite integrated semiconductor device in which circuits such as an input surge/noise absorbing circuit, an attenuating/level-shifting circuit, and an electrical signal converting circuit are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices, such as input terminals, receiving external electrical signals, a plurality of outputting devices, such as output terminals, for outputting electrical signals, and a plurality of input surge/noise absorbing circuits absorbing surges or noise.
- Each of the input surge/noise absorbing circuits is connected between one of the inputting devices and a corresponding outputting device.
- the semiconductor components forming the input surge/noise absorbing circuits are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices, such as input terminals, receiving external electrical signals, a plurality of outputting devices, such as output terminals, outputting electrical signals, and a plurality of attenuating/level-shifting circuits providing an attenuating or a level-shifting operation.
- Each of the attenuating/level-shifting circuits is connected between one of the inputting devices and a corresponding outputting device.
- the semiconductor components forming the attenuating/level-shifting circuits are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices, such as input terminals, receiving external electrical signals, a plurality of outputting devices, such as output terminals, outputting electrical signals, and a plurality of electrical signal converting circuits providing an electrical signal converting operation.
- Each of the electrical signal converting circuits is connected between one of the inputting devices and a corresponding outputting device.
- the semiconductor components forming the electrical signal converting circuits are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices, such as input terminals, receiving external electrical signals, and a plurality of outputting devices, such as output terminals, outputting electrical signals.
- Each of a plurality of input surge/noise absorbing circuits absorbing surges or noise is connected between one of the inputting devices and a corresponding outputting device.
- a plurality of attenuating/level-shifting circuits provide an attenuating or a level-shifting operation.
- Each of the attenuating/level-shifting circuits is connected between one of the inputting devices and a corresponding outputting device.
- the semiconductor components forming the input surge/noise absorbing circuits and the semiconductor components forming the attenuating/level-shifting circuits are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices that receive an input electrical signal, a plurality of outputting devices that transmit an output electrical signal, a plurality of input surge/noise absorbing circuits that absorb surge or noise of the input electrical signal, and a plurality of electrical signal converting circuits that convert the input electrical signal to the output electrical signal.
- Each of the input surge/noise absorbing circuits is connected between respective ones of the inputting devices and corresponding outputting devices.
- each of the electrical signal converting circuits is connected between respective ones of the inputting devices and corresponding outputting devices.
- a plurality of semiconductor components form the input surge/noise absorbing circuits and the electrical signal converting circuits and are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices that receive an input electrical signal, a plurality of outputting devices that transmit an output electrical signal, a plurality of attenuating/level-shifting circuits that attenuate or level-shift the input electrical signal, and a plurality of electrical signal converting circuits that convert the input electrical signal to the output electrical signal.
- Each of the attenuating/level-shifting circuits is connected between respective ones of the inputting devices and corresponding outputting devices.
- each of the electrical signal converting circuits is connected between respective ones of the inputting devices and corresponding outputting devices.
- a plurality of semiconductor components form the attenuating/level-shifting circuits and the electrical signal converting circuits and are integrated in the same semiconductor substrate.
- a composite integrated semiconductor device comprises a plurality of inputting devices that receive an input electrical signal, a plurality of outputting devices that transmit an output electrical signal, a plurality of input surge/noise absorbing circuits that absorb surge or noise of the input electrical signal, a plurality of attenuating/level-shifting circuits that attenuate or level-shift the input electrical signal, and a plurality of electrical signal converting circuits that convert the input electrical signal to the output electrical signal.
- Each of the input surge/noise absorbing circuits, the attenuating/level-shifting circuits, and the electrical signal converting circuits is connected between respective ones of the inputting devices and corresponding outputting devices.
- a plurality of semiconductor components form the input surge/noise absorbing circuits, the attenuating/level-shifting circuits, and the electrical signal converting circuits, and are integrated in the same semiconductor substrate.
- the input surge/noise absorbing circuits are able to withstand an electrostatic surge of approximately ⁇ 0.5 kV to 15 kV or more at approximately 150 pF and 500 ⁇ , or an electrostatic surge of approximately ⁇ 1000V or more at approximately 100 pF and 1500 ⁇ , or an electromagnetic wave noise of approximately 20 to 100 V/m or more at approximately 10 kHz to 200 MHz.
- the composite integrated semiconductor device according to the preferred embodiment of the present invention may output the electrical signals through the outputting devices to a controller controlling the electrical equipment of an automobile, for example.
- the position of the outputting devices may form an angle of about 90° or more with respect to the position of the inputting devices.
- the semiconductor substrate on which all the semiconductor components are integrated may be sealed using a resin or ceramic.
- the input surge/noise absorbing circuits, the attenuating/level-shifting circuits, and the electrical signal converting circuits are integrated on the same semiconductor substrate. This reduces the number of components mounted on a printed circuit board compared with a conventional circuit configuration in which semiconductor devices having discrete components are combined.
- FIG. 1 is a block diagram showing an example of the configuration of a composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 2 is a block diagram schematically showing an example of an interface between the composite integrated semiconductor device of FIG. 1 and another semiconductor device.
- FIG. 3 is a plan view of a chip showing an example of a chip layout of the composite integrated semiconductor device of FIG. 1.
- FIG. 4 is a block diagram showing another example of a configuration of the composite integrated semiconductor device according an embodiment of to the present invention.
- FIG. 5 is a perspective view showing the composite integrated semiconductor device according to an embodiment of the present invention as applied to a control unit for the electrical equipment of an automobile.
- FIG. 6 is a plan view showing a Small Outline Package (SOP) for sealing the composite integrated semiconductor device according to an embodiment of the present invention.
- SOP Small Outline Package
- FIG. 7 is a perspective view showing a Dual Inline Package (DIP) for sealing the composite integrated semiconductor device according to an embodiment of the present invention.
- DIP Dual Inline Package
- FIG. 8 is a plan view showing a Quad Flat Package (QFP) for sealing the composite integrated semiconductor device according to an embodiment of the present invention.
- QFP Quad Flat Package
- FIG. 9 is a plan view showing a Ball Grid Array (BGA) package or a Chip Size Package (CSP) for sealing the composite integrated semiconductor device according to an embodiment of the present invention.
- BGA Ball Grid Array
- CSP Chip Size Package
- FIG. 10 is a circuit diagram showing an example of the configuration of one of a plurality of units of the composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 11 is a circuit diagram showing another example of the configuration of a unit of the composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 12 is a circuit diagram showing another example of the configuration of a unit of the composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 13 is a circuit diagram showing another example of the configuration of a unit of the composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 14 is a circuit diagram showing another example of the configuration of a unit of the composite integrated semiconductor device according to an embodiment of the present invention.
- FIG. 15 is a block diagram showing a configuration of a circuit block shown in FIG. 10 and FIG. 13.
- FIG. 16 is a block diagram schematically showing an interface between a functional circuit comprising a plurality of conventional discrete semiconductor components and a semiconductor device.
- FIG. 1 is a block diagram showing an example configuration of the composite integrated semiconductor device 15 according to an embodiment of the present invention.
- FIG. 2 is a block diagram schematically showing an example of an interface between the composite integrated semiconductor device 15 of FIG. 1 and another semiconductor device 4 .
- the composite integrated semiconductor device 15 is comprised of a plurality of integrated circuits 7 .
- the integrated circuits 7 are connected in parallel between reference electric potentials formed in the same semiconductor substrate, and sealed in a semiconductor package 6 .
- Each integrated circuit 7 has a unit structure with a configuration including an input surge/noise absorbing circuit 8 absorbing surge or noise, an attenuating/level-shifting circuit 9 providing an attenuating or a level-shifting operation, and an electrical signal converting circuit 10 providing an electrical signal converting operation.
- a reference electric potential of the input surge/noise absorbing circuit 8 differs from a reference electric potential of the electrical signal converting circuit 10 .
- the input surge/noise absorbing circuit 8 and the electrical signal converting circuit 10 are connected via the attenuating/level-shifting circuit 9 .
- each input terminal 16 i.e., inputting device
- Each output terminal 17 i.e., outputting device
- the input surge/noise absorbing circuit 8 of each unit 7 absorbs electrostatic surge or electromagnetic wave noise applied between an input terminal 16 and a grounding line 13 , or between the grounding line 13 and a first power source line 11 .
- an external electrical input signal 2 transmitted to each of the input terminals 16 of the composite integrated semiconductor device 15 , to the input surge/noise absorbing circuit 8 , and then to an input line 18 of the attenuating/level-shifting circuit 9 .
- the attenuating/level-shifting circuit 9 carries out attenuation or level-shifting of a transient and DC voltage component of the electrical input signal 2 .
- An electrical signal output from the attenuating level-shifting circuit 9 is transmitted to an input line 19 of the electrical signal converting circuit 10 .
- the electrical signal converting circuit 10 converts the electrical signal from the attenuating/level-shifting circuit 9 to an electrical output signal 3 for which an applied voltage of a second power source line 12 to a grounding line 14 is a reference voltage.
- the electrical output signals 3 from each of the units 7 are output through the output terminals 17 of the composite integrated semiconductor device 15 and transmitted to the input terminals 5 of a semiconductor device 4 , such as a microcomputer or a large-scale integrated (LSI) circuit.
- a semiconductor device 4 such as a microcomputer or a large-scale integrated (LSI) circuit.
- FIG. 3 is a plan view of a chip showing an example of a chip layout of the composite integrated semiconductor device according to an embodiment of the invention.
- an input surge/noise absorbing circuit 8 is aligned in the lateral direction of the chip (i.e., left-to-right direction in FIG. 3) to form an integrated circuit.
- the integrated circuits that are formed are aligned in the longitudinal direction of the chip (i.e., top-to-bottom direction in FIG. 3).
- FIG. 3 The chip layout of FIG. 3 shows two regions 20 and 22 aligned laterally at the bottom of FIG. 3. Region 20 is a ground for the input surge/noise absorbing circuits 8 , and region 22 is a ground for the electrical signal converting circuits 10 . Two regions 20 and 22 are formed because of a difference in respective reference electric potentials.
- each integrated circuit 7 which is a unit structure of the composite integrated semiconductor device 15 , may be formed with only, for example, the input surge/noise absorbing circuit 8 .
- each integrated circuit 7 may be formed with only the attenuating/level-shifting circuit 9 , or only with the electrical signal converting circuit 10 .
- each integrated circuit 7 may be formed with any two of the input surge/noise absorbing circuit 8 , the attenuating/level-shifting circuit 9 , and the electrical signal converting circuit 10 .
- FIG. 5 shows an example of applying the composite integrated semiconductor device according to an embodiment of the present invention to the electrical control unit (EDU) that controls the electrical equipment of an automobile, such as the engine, the automatic transmission, the anti-lock braking system, etc.
- EEU electrical control unit
- the control unit 24 is drawn as being transparent so that the inner structure can be seen.
- the composite integrated semiconductor device 15 and a semiconductor device 4 which is a control device such as a microcomputer, are mounted on a printed circuit board 25 .
- a connector 26 for the control unit 24 is also mounted on the printed circuit board 25 .
- Electrical input signals 2 are input from outside the control unit 24 to the connector 26 .
- the semiconductor device 4 uses the electrical input signals 2 to gather information, to determine equipment status, etc. for the automobile. Therefore, the composite integrated semiconductor device 15 is positioned between the connector 26 and the semiconductor device 4 .
- resistors (not shown) are connected to the input terminals 16 of the composite integrated semiconductor device 15 , with each of the input terminals 16 being matched to each of the input signals 2 .
- the connector 26 receives an electrostatic discharge pulse and electromagnetic interference noise.
- the composite integrated semiconductor device 15 removes the electrostatic discharge pulse and the electromagnetic interference noise.
- electrical signals without the electrostatic discharge pulse and the electromagnetic interference noise are converted in the composite integrated semiconductor device 15 to signals (i.e., electrical output signals 3 ) having an adequate electric potential level for transmission to the input terminals of the semiconductor device 4 .
- the composite integrated semiconductor device 15 as compared with the conventional configuration of FIG. 16, in which equivalent functions are provided using a plurality of discrete components, the mounting area of the semiconductor components 1 occupying the printed circuit board 25 is decreased, together with a reduction in the cost of mounting the semiconductor components.
- the composite integrated semiconductor device 15 When the composite integrated semiconductor device 15 according to an embodiment of the present invention is applied to the electrical equipment of an automobile, the composite integrated semiconductor device 15 is able to withstand electrostatic discharge pulses of approximately ⁇ 0.5 kV to 15 kV or more at approximately 150 pF and 500 ⁇ in accordance with D001-94 of the Japan Automobile Standard Organization (JASO), or to withstand electrostatic discharge pulses of approximately ⁇ 1000V or more at 100 pF and approximately 1500 ⁇ in accordance with standard ED-4701-1 of the Electronic Industries Association of Japan (EIAJ). Moreover, the composite integrated semiconductor device 15 is able to withstand electromagnetic interferences of approximately 20 to 100 V/m or more at approximately 10 kHz to 200 MHz.
- electrostatic discharge pulses of approximately ⁇ 0.5 kV to 15 kV or more at approximately 150 pF and 500 ⁇ in accordance with D001-94 of the Japan Automobile Standard Organization (JASO), or to withstand electrostatic discharge pulses of approximately ⁇ 1000V or more at 100 pF and approximately 1500
- FIG. 6 is a plan view showing an example of sealing the composite integrated semiconductor device 15 of an embodiment of the present invention in a Small Outline Package (SOP) 31 .
- SOP Small Outline Package
- a plurality of output terminals 34 are positioned about 180° from a plurality of input terminals 33 , thereby preventing surge and noise applied to the input terminals 33 from being transmitted to the output terminals 34 .
- arrows with reference numerals 32 and 35 represent the electrical input signals and the electrical output signals, respectively.
- FIG. 7 is a perspective view showing an example of sealing the composite integrated semiconductor device 15 in a Dual In-Line Package (DIP) 36 .
- DIP Dual In-Line Package
- a plurality of output terminals 39 are positioned about 180° from a plurality of input terminals 38 , thereby preventing surge and noise applied to the input terminals 38 from being transmitted to the output terminals 39 .
- arrows with reference numerals 37 and 40 represent the electrical input signals and the electrical output signals, respectively.
- FIG. 8 is a plan view showing an example of sealing the composite integrated semiconductor device 15 in a Quad Flat Package (QFP) 41 .
- QFP Quad Flat Package
- a plurality of output terminals 44 are separated from a plurality of input terminals 43 in one or more different directions (two directions in the example shown in FIG. 8) by an angle of about 90° or more.
- arrows with reference numerals 42 and 45 represent the electrical input signals and the electrical output signals, respectively.
- one set of input or output terminals may protrude from a side of the semiconductor package 6 and the other set of terminals may protrude from the bottom of the semiconductor package 6 .
- FIG. 9 is a plan view showing an example of sealing the composite integrated semiconductor device 15 in a Ball Grid Array (BGA) package 46 or a Chip Size Package (CSP) 46 .
- BGA Ball Grid Array
- CSP Chip Size Package
- a plurality of output terminals 49 are disposed on a side different from a side provided with a plurality of input terminals 48 by an angle of approximately 90° or more.
- the output terminals 49 and the input terminals 48 are located on opposite sides of the composite integrated semiconductor device 15 .
- reference numeral 47 denotes the electrical input signals
- reference numeral 50 denotes the electrical output signals.
- a plurality of the input terminals are collected together on one side of the semiconductor package 6 and a plurality of the output terminals are collected together on the other side. Any power source terminals and grounding terminals are located at the remaining sides.
- the semiconductor substrate on which all the semiconductor components are integrated may be sealed using a resin or ceramic.
- FIG. 10 through FIG. 14 are circuit diagrams showing specific circuit configurations for the input surge/noise absorbing circuit 8 , the attenuating/level-shifting circuit 9 , and the electrical signal converting circuit 10 .
- Each of FIGS. 10 through 14 shows one of the integrated circuits 7 , which is a unit structure of the composite integrated semiconductor device 15 .
- the electrical signal converting circuit 10 is not shown in FIGS. 11 and 12.
- the example shown in FIG. 10 has ten diodes 51 to 60 , six resistors 61 to 66 , and a circuit block 10 , which is the electrical signal converting circuit 10 (described below).
- the example shown in FIG. 11 has eight diodes 71 to 78 and five resistors 79 to 83 .
- the example shown in FIG. 12 has eleven diodes 91 to 101 , five resistors 102 to 106 , and an operational amplifier 107 .
- the example shown in FIG. 13 has nine diodes 111 to 119 , six resistors 120 to 125 , and an electrical signal converting circuit 10 (circuit block).
- the circuit blocks 10 of FIGS. 10 and 13 are formed using conventional techniques and may include circuits such as an operational amplifier (OP amp) 151 , a buffer 152 , an inverter 153 , a logic gate 154 , a filter 155 , and a ROM 156 , as shown in FIG. 15.
- OP amp operational amplifier
- the components of the circuits shown in FIGS. 10 - 14 are formed using conventional techniques.
- the diodes 51 to 60 , 71 to 78 , 91 to 101 , 111 to 119 , and 131 to 133 may be formed, for example, using PN junction structures having a p-type diffused region and an n-type diffused region, or by MOSFETs having a main terminal and a gate that are short-circuited.
- the resistors 61 to 66 , 79 to 83 , 102 to 106 , 120 to 125 , 134 , and 135 may be formed of, for example, diffused resistors having a diffused region formed in a semiconductor substrate, resistors formed of polysilicon, or well resistors having a well formed in a semiconductor substrate.
- the capacitor 143 of FIG. 14 may be formed by, for example, a well with polysilicon layered thereon through an insulation layer.
- the OP amp 151 , the buffer 152 , the inverter 153 , the logic gate 154 , the filter 155 , and the ROM 156 may be formed by MOSFETs, as well as by the above-described resistors and capacitors. Voltages at various parts of the circuits in FIGS. 10 - 13 are provided as approximately 24V at IN, 18V at Vcc 1 , 7V at Vcc 2 , and 4.0 to 5.3V at OUT.
- the input surge/noise absorbing circuit 8 , the attenuating/level-shifting circuit 9 , and the electrical signal converting circuit 10 are integrated in the same semiconductor substrate.
- the number of components mounted on a printed circuit board is reduced compared with a conventional circuit configuration in which semiconductor devices are formed by combining a plurality of discrete components.
- the mounting area on the printed circuit board and the number of man-hours required to mount the components are reduced.
- the present invention is not limited to the above described aspects, but may be modified, provided the circuits at stages preceding a microcomputer, such as the circuit for absorbing noise and surge and the circuit for making electric signal levels match those of the microcomputer, are integrated in the same semiconductor substrate.
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Priority Applications (2)
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US11/723,356 US7352548B2 (en) | 2001-09-06 | 2007-03-19 | Composite integrated semiconductor device |
US12/071,604 US7948725B2 (en) | 2001-09-06 | 2008-02-22 | Composite integrated semiconductor device |
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JP2001269773 | 2001-09-06 | ||
JP2001-269773 | 2001-09-06 |
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US11/723,356 Continuation US7352548B2 (en) | 2001-09-06 | 2007-03-19 | Composite integrated semiconductor device |
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US20030063503A1 true US20030063503A1 (en) | 2003-04-03 |
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US10/235,841 Abandoned US20030063503A1 (en) | 2001-09-06 | 2002-09-06 | Composite integrated semiconductor device |
US11/723,356 Expired - Lifetime US7352548B2 (en) | 2001-09-06 | 2007-03-19 | Composite integrated semiconductor device |
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US11/723,356 Expired - Lifetime US7352548B2 (en) | 2001-09-06 | 2007-03-19 | Composite integrated semiconductor device |
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Cited By (2)
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US20040021999A1 (en) * | 2002-08-02 | 2004-02-05 | Nec Electronics Corporation | Input protection circuit |
WO2007064403A1 (en) * | 2005-11-30 | 2007-06-07 | Analog Devices, Inc. | Small signal amplifier with large signal output boost stage |
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US7948725B2 (en) * | 2001-09-06 | 2011-05-24 | Fuji Electric Systems Co., Ltd. | Composite integrated semiconductor device |
TWI409918B (zh) * | 2010-03-10 | 2013-09-21 | Wei Kuang Feng | 具有防突波功能之多層式半導體元件封裝結構及其製作方法 |
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JP2830797B2 (ja) | 1995-09-19 | 1998-12-02 | セイコーエプソン株式会社 | 半導体素子及び回路基板 |
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JP2000050486A (ja) | 1998-07-27 | 2000-02-18 | Denso Corp | 集積回路用保護装置 |
JP2001185686A (ja) * | 1999-12-24 | 2001-07-06 | Seiko Epson Corp | 半導体集積装置 |
JP3509713B2 (ja) * | 2000-07-26 | 2004-03-22 | 株式会社デンソー | 半導体集積回路装置及び半導体集積回路装置の回路ブロック搭載方法 |
US6498381B2 (en) * | 2001-02-22 | 2002-12-24 | Tru-Si Technologies, Inc. | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
-
2002
- 2002-09-05 DE DE10241086.0A patent/DE10241086B4/de not_active Expired - Fee Related
- 2002-09-06 US US10/235,841 patent/US20030063503A1/en not_active Abandoned
-
2007
- 2007-03-19 US US11/723,356 patent/US7352548B2/en not_active Expired - Lifetime
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US4945395A (en) * | 1986-08-12 | 1990-07-31 | Fujitsu Limited | Semiconductor device |
US4887182A (en) * | 1986-09-26 | 1989-12-12 | Raychem Limited | Circuit protection device |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
US5014155A (en) * | 1988-06-13 | 1991-05-07 | Nissan Motor Company, Limited | Circuit for protecting input of semiconductor device |
US5625280A (en) * | 1995-10-30 | 1997-04-29 | International Business Machines Corp. | Voltage regulator bypass circuit |
US5721656A (en) * | 1996-06-10 | 1998-02-24 | Winbond Electronics Corporation | Electrostatc discharge protection network |
US20020012212A1 (en) * | 1998-04-07 | 2002-01-31 | Koji Yasumori | Semiconductor integrated circuit |
US6218854B1 (en) * | 1998-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Data line termination circuits and integrated circuit devices including attenuation circuit and charge/discharge circuit |
US20010028239A1 (en) * | 2000-03-10 | 2001-10-11 | Henri Vanderhenst | Triac controller having soft start speed regulation |
US6753836B2 (en) * | 2000-12-06 | 2004-06-22 | Samsung Electronics Co., Ltd. | Liquid crystal device driver circuit for electrostatic discharge protection |
Cited By (4)
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---|---|---|---|---|
US20040021999A1 (en) * | 2002-08-02 | 2004-02-05 | Nec Electronics Corporation | Input protection circuit |
US7233466B2 (en) | 2002-08-02 | 2007-06-19 | Nec Electronics Corporation | Input protection circuit |
US7288993B2 (en) | 2005-01-25 | 2007-10-30 | Analog Devices, Inc. | Small signal amplifier with large signal output boost stage |
WO2007064403A1 (en) * | 2005-11-30 | 2007-06-07 | Analog Devices, Inc. | Small signal amplifier with large signal output boost stage |
Also Published As
Publication number | Publication date |
---|---|
DE10241086B4 (de) | 2016-02-18 |
DE10241086A1 (de) | 2003-03-27 |
US7352548B2 (en) | 2008-04-01 |
US20070285855A1 (en) | 2007-12-13 |
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Owner name: FUJI ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIUCHI, SHIN;YOSHIDA, KAZUHIKO;ICHIMURA, TAKESHI;AND OTHERS;REEL/FRAME:013547/0285 Effective date: 20021115 |
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