US20030052396A1 - Semiconductor device and method of making the same - Google Patents

Semiconductor device and method of making the same Download PDF

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Publication number
US20030052396A1
US20030052396A1 US10/246,126 US24612602A US2003052396A1 US 20030052396 A1 US20030052396 A1 US 20030052396A1 US 24612602 A US24612602 A US 24612602A US 2003052396 A1 US2003052396 A1 US 2003052396A1
Authority
US
United States
Prior art keywords
package
polyamide
housing
semiconductor device
thermoplastic resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/246,126
Other languages
English (en)
Inventor
Masaya Tajima
Katsuya Kogiso
Mitsuo Watanabe
Toshiki Matsubara
Kenji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Rika Co Ltd
Original Assignee
Tokai Rika Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Assigned to KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO reassignment KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOGISO, KATSUYA, MATSUBARA, THOSIKI, SATO, KENJI, TAJIMA, MASAYA, WATANABE, MITSUO
Publication of US20030052396A1 publication Critical patent/US20030052396A1/en
Assigned to KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO reassignment KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE FOURTH ASSIGNOR'S NAME AND THE SPELLING OF THE ASSIGNEE'S ADDRESS PREVIOUSLY RECORDED ON REEL 013505 FRAME 0917. Assignors: KOGISO, KATSUYA, MATSUBARA, TOSHIKI, SATO, KENJI, TAJIMA, MASAYA, WATANABE, MITSUO
Priority to US12/204,502 priority Critical patent/US7588962B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to sealing of a semiconductor device in which a semiconductor package and a housing containing the semiconductor package are formed of different synthetic resins. More particularly, the present invention relates to a semiconductor device in which a housing is formed of thermoplastic resin (a first synthetic resin) and a semiconductor package is formed of thermosetting epoxy resin (a second synthetic resin), and a method of making the same.
  • thermosetting epoxy resin which is a raw material of the semiconductor package
  • thermoplastic resin which is a raw material of the housing
  • a semiconductor device has been made by a method different from insert molding.
  • a housing 51 having a connector terminal 50 is provided.
  • the connector terminal 50 is preformed by injection molding in a predetermined position of the housing 51 .
  • a surface of the package 52 that abuts against the housing 51 has an adhesive agent applied thereon.
  • the connecting portion 52 a of the package 52 is placed in contact with the connector terminal 50 , the package 52 is fixed to the housing 51 .
  • a space 53 in the housing 51 is filled with a sealant 54 such as liquid epoxy and silicone to seal the package 52 .
  • the above-mentioned manufacturing method in which the package 52 is sealed with the sealant 54 , requires more steps (i.e. three steps) compared to the manufacturing method by insert molding: a step of making the housing 51 having the connector terminal 50 , a step of adhering the package 52 to the housing 51 , and a step of filling the housing 51 with the sealant 54 . This complicates the manufacturing process as well as increases the manufacturing costs of the semiconductor device.
  • An object of the invention is to provide a semiconductor device that is easy to manufacture and has excellent moisture resistance.
  • Another object of the invention is to provide a semiconductor device that holds down its manufacturing costs.
  • the semiconductor device includes a housing and a semiconductor package.
  • the housing is formed of a first synthetic resin that is a thermoplastic resin.
  • the semiconductor package is formed of a second synthetic resin that is a thermosetting resin.
  • the package is sealed in the housing.
  • the package has a modified face that has adhesive properties to the first synthetic resin. The modified face is formed on a surface of the package by UV-irradiating the surface before the sealing of the package in the housing.
  • the present invention also provides a method of making a semiconductor device.
  • the method includes steps of: UV-irradiating a semiconductor package formed of thermosetting epoxy resin to modify its surface to be adhesive to polyamide; placing the package in a die; and filling a space in the die with melted polyamide or a melted thermoplastic resin including polyamide to seal the package by insert molding.
  • FIG. 1A is a schematic plan view of a semiconductor device.
  • FIG. 1B is a schematic cross-sectional view of the semiconductor device taken along the line B-B of the FIG. 1A.
  • FIG. 2 is a schematic cross-sectional view showing insert molding during the manufacturing process of the semiconductor device.
  • FIG. 3A is a schematic cross-sectional view showing a conventional manufacturing process before the sealant is applied.
  • FIG. 3B is a schematic cross-sectional view showing a conventional manufacturing process after the sealant is applied.
  • FIGS. 1 and 2 An embodiment of the present invention is described with reference to FIGS. 1 and 2 hereinafter.
  • a semiconductor device 11 includes a housing 12 .
  • the housing 12 is generally rectangular solid in shape and formed of thermoplastic resin.
  • the housing 12 is formed of polyamide (PA).
  • PA polyamide
  • a semiconductor package 13 is sealed in the housing 12 .
  • the package 13 is generally rectangular solid in shape and formed of thermosetting epoxy resin.
  • the surface 13 a of the package 13 is modified by UV irradiation. Specifically, the modified face 13 a of the package 13 has adhesive properties to the polyamide.
  • a plurality (two in this embodiment) of connector terminals 14 extend from the package 13 in parallel. Each terminal 14 extends out of the housing 12 with one end of each terminal being sealed in the housing 12 together with the package 13 .
  • the package 13 is formed of thermosetting epoxy resin by a conventional method.
  • the overall surface of the package 13 is irradiated by ultraviolet rays. This modifies the surface of the package 13 to be adhesive to polyamide.
  • the package 13 is then placed in a die 20 .
  • the die 20 includes an upper die 20 a and a lower die 20 b .
  • the dies 20 a , 20 b have a cavity that faces to each other so that a space 15 is defined in the die 20 when the dies 20 a , 20 b are positioned properly.
  • the dies 20 a , 20 b have a semi-cylindrical recess at their opposing end.
  • the two recesses forms cylindrical holes 20 c .
  • the internal diameter of the holes 20 c is designed to be approximately the same as the external diameter of the terminals 14 .
  • thermoplastic resin PA in this embodiment
  • PA melted thermoplastic resin
  • the housing 12 is insert molded.
  • the temperature at which the thermoplastic resin melts is lower than or the same as the temperature at which IC chips (not shown) in the package 13 shows heat resistance.
  • the upper and lower dies 20 a , 20 b are opened.
  • the housing 12 is formed with the package 13 and a part of the terminals 14 sealed. The semiconductor device 11 is completed.
  • the semiconductor device 11 can be manufactured in one step by insert molding. In other words, conventionally required steps: a step of performing a housing only, a step of adhering the package to the housing, and a step of filling the housing with the sealant, are abbreviated. Thus, the number of manufacturing steps is reduced and the semiconductor device 11 can be easily and inexpensively produced.
  • the surface of the package 13 is UV-irradiated and modified to have adhesive properties to polyamide.
  • the modified face 13 a ensures the adhesiveness between the housing 12 and the package 13 . Thus, and invasion of moisture from the gap between the terminal 14 and the housing 12 is prevented (and the integrity of the semiconductor device 11 is maintained). Thus, conventional problems, such as leaks or shorts, are avoided.
  • a single polyamide is used as a thermoplastic resin. This improves the adhesive properties between the package 13 and the housing 12 compared with those when a polymer alloy of polyamide and another resin is used.
  • the thermoplastic resin that forms the housing 12 is not limited to single PA.
  • a resin of polymer alloy of PA and PPS polyphenylene sulfide
  • the combination of PPS with PA improves heat resistance, dimensional stability, and low water absorption rate of the semiconductor device 11 compared with single PA, while keeping the adhesive properties between the package 13 and the housing 12 .
  • a resin of polymer alloy of PA and PBT may also be used.
  • PBT polybutylene telephthalate
  • the combination of PBT with PA improves low water absorption rate and abrasion resistance compared with single PA.
  • the terminal 14 may be a male connector.
  • the number of the terminal 14 is not limited to two but may be one or more than two.
  • the shape of the housing 12 and the package 13 is not limited to generally rectangular solid but may be varied in any suitable form.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
US10/246,126 2001-09-20 2002-09-18 Semiconductor device and method of making the same Abandoned US20030052396A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/204,502 US7588962B2 (en) 2001-09-20 2008-09-04 Method of making semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-287076 2001-09-20
JP2001287076A JP4620303B2 (ja) 2001-09-20 2001-09-20 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/204,502 Division US7588962B2 (en) 2001-09-20 2008-09-04 Method of making semiconductor device

Publications (1)

Publication Number Publication Date
US20030052396A1 true US20030052396A1 (en) 2003-03-20

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
US10/246,126 Abandoned US20030052396A1 (en) 2001-09-20 2002-09-18 Semiconductor device and method of making the same
US12/204,502 Expired - Fee Related US7588962B2 (en) 2001-09-20 2008-09-04 Method of making semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/204,502 Expired - Fee Related US7588962B2 (en) 2001-09-20 2008-09-04 Method of making semiconductor device

Country Status (3)

Country Link
US (2) US20030052396A1 (de)
EP (1) EP1296371A3 (de)
JP (1) JP4620303B2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471364A (zh) * 2012-07-16 2015-03-25 株式会社电装 电子装置及其制造方法
US9517532B2 (en) 2013-12-09 2016-12-13 Denso Corporation Metal member, metal member surface processing method, semiconductor device, semiconductor device manufacturing method, and composite molded body
US10395947B2 (en) 2014-02-27 2019-08-27 Denso Corporation Manufacturing method of a resin molded article

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4620303B2 (ja) 2001-09-20 2011-01-26 株式会社東海理化電機製作所 半導体装置及びその製造方法
DE102007051870A1 (de) * 2007-10-30 2009-05-07 Robert Bosch Gmbh Modulgehäuse und Verfahren zur Herstellung eines Modulgehäuses
JP2010071724A (ja) * 2008-09-17 2010-04-02 Mitsubishi Electric Corp 樹脂モールド半導体センサ及び製造方法
JP5038273B2 (ja) * 2008-09-17 2012-10-03 三菱電機株式会社 樹脂モールド半導体センサ及び製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788583A (en) * 1986-07-25 1988-11-29 Fujitsu Limited Semiconductor device and method of producing semiconductor device
US5519177A (en) * 1993-05-19 1996-05-21 Ibiden Co., Ltd. Adhesives, adhesive layers for electroless plating and printed circuit boards
US5641997A (en) * 1993-09-14 1997-06-24 Kabushiki Kaisha Toshiba Plastic-encapsulated semiconductor device
US5786626A (en) * 1996-03-25 1998-07-28 Ibm Corporation Thin radio frequency transponder with leadframe antenna structure
US5874784A (en) * 1995-10-25 1999-02-23 Sharp Kabushiki Kaisha Semiconductor device having external connection terminals provided on an interconnection plate and fabrication process therefor
US20010033722A1 (en) * 2000-04-19 2001-10-25 Takeshi Okada Optoelectronic module
US20020024439A1 (en) * 2000-06-21 2002-02-28 Wakahiro Kawai Coin-shaped IC tag and method of manufacturing the same
US20020030258A1 (en) * 1996-07-12 2002-03-14 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device
US20020037143A1 (en) * 2000-08-07 2002-03-28 Yoshiki Kuhara Optical communication device
US20020195744A1 (en) * 1999-12-06 2002-12-26 Yusuke Otsuki Mold release film for sealing semiconductor element and sealing method for semiconductor element using it
US6605343B1 (en) * 1999-02-22 2003-08-12 Sekisui Chemical Co., Ltd. Composite material and synthetic sleeper using the composite material
US6607825B1 (en) * 1995-12-26 2003-08-19 Ibiden Co., Ltd. Metal film bonded body, bonding agent layer and bonding agent

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689311A (en) 1970-11-06 1972-09-05 Ler Son Co Inc Method for external coating of cylindrical objects
JPS63102246U (de) * 1986-12-22 1988-07-02
EP0407585A4 (en) * 1988-07-15 1992-06-10 Toray Silicone Co. Ltd. Semiconductor device sealed with resin and a method of producing the same
JP2701072B2 (ja) * 1989-06-20 1998-01-21 東レ・ダウコーニング・シリコーン株式会社 樹脂封止型光結合半導体装置およびその製造方法
JP2701045B2 (ja) * 1988-07-15 1998-01-21 東レ・ダウコーニング・シリコーン株式会社 樹脂封止型半導体装置およびその製造方法
JPH07196898A (ja) * 1993-12-28 1995-08-01 Kanebo Ltd 熱可塑性樹脂組成物
JPH0878582A (ja) * 1994-08-31 1996-03-22 Toshiba Corp 半導体装置及び半導体装置製造方法
JPH10212365A (ja) * 1996-11-29 1998-08-11 Mitsui Chem Inc 樹脂成形体およびその製造方法
JPH1135915A (ja) * 1997-07-15 1999-02-09 Toray Ind Inc 樹脂封止型半導体装置
JPH11254476A (ja) * 1998-03-13 1999-09-21 Mitsubishi Eng Plast Corp 電気・電子部品の樹脂封止成形品の製造方法
JPH11254477A (ja) * 1998-03-13 1999-09-21 Mitsubishi Eng Plast Corp 電気・電子部品の樹脂封止成形品の製造方法
US6274927B1 (en) * 1999-06-03 2001-08-14 Amkor Technology, Inc. Plastic package for an optical integrated circuit device and method of making
US6643919B1 (en) * 2000-05-19 2003-11-11 Siliconware Precision Industries Co., Ltd. Method of fabricating a semiconductor device package having a core-hollowed portion without causing resin flash on lead frame
US7166910B2 (en) * 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
JP4620303B2 (ja) 2001-09-20 2011-01-26 株式会社東海理化電機製作所 半導体装置及びその製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788583A (en) * 1986-07-25 1988-11-29 Fujitsu Limited Semiconductor device and method of producing semiconductor device
US5519177A (en) * 1993-05-19 1996-05-21 Ibiden Co., Ltd. Adhesives, adhesive layers for electroless plating and printed circuit boards
US5641997A (en) * 1993-09-14 1997-06-24 Kabushiki Kaisha Toshiba Plastic-encapsulated semiconductor device
US5874784A (en) * 1995-10-25 1999-02-23 Sharp Kabushiki Kaisha Semiconductor device having external connection terminals provided on an interconnection plate and fabrication process therefor
US6607825B1 (en) * 1995-12-26 2003-08-19 Ibiden Co., Ltd. Metal film bonded body, bonding agent layer and bonding agent
US5786626A (en) * 1996-03-25 1998-07-28 Ibm Corporation Thin radio frequency transponder with leadframe antenna structure
US20020030258A1 (en) * 1996-07-12 2002-03-14 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device
US6605343B1 (en) * 1999-02-22 2003-08-12 Sekisui Chemical Co., Ltd. Composite material and synthetic sleeper using the composite material
US20020195744A1 (en) * 1999-12-06 2002-12-26 Yusuke Otsuki Mold release film for sealing semiconductor element and sealing method for semiconductor element using it
US20010033722A1 (en) * 2000-04-19 2001-10-25 Takeshi Okada Optoelectronic module
US20020024439A1 (en) * 2000-06-21 2002-02-28 Wakahiro Kawai Coin-shaped IC tag and method of manufacturing the same
US20020037143A1 (en) * 2000-08-07 2002-03-28 Yoshiki Kuhara Optical communication device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471364A (zh) * 2012-07-16 2015-03-25 株式会社电装 电子装置及其制造方法
US20150158221A1 (en) * 2012-07-16 2015-06-11 Denso Corporation Electronic device and method for manufacturing the same
US9789637B2 (en) * 2012-07-16 2017-10-17 Denso Corporation Electronic device and method for manufacturing the same
US9517532B2 (en) 2013-12-09 2016-12-13 Denso Corporation Metal member, metal member surface processing method, semiconductor device, semiconductor device manufacturing method, and composite molded body
US10395947B2 (en) 2014-02-27 2019-08-27 Denso Corporation Manufacturing method of a resin molded article

Also Published As

Publication number Publication date
EP1296371A2 (de) 2003-03-26
US7588962B2 (en) 2009-09-15
US20090023253A1 (en) 2009-01-22
EP1296371A3 (de) 2006-05-24
JP4620303B2 (ja) 2011-01-26
JP2003094479A (ja) 2003-04-03

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AS Assignment

Owner name: KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO, JAPA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAJIMA, MASAYA;KOGISO, KATSUYA;WATANABE, MITSUO;AND OTHERS;REEL/FRAME:013505/0917

Effective date: 20020917

AS Assignment

Owner name: KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO, JAPA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE FOURTH ASSIGNOR'S NAME AND THE SPELLING OF THE ASSIGNEE'S ADDRESS PREVIOUSLY RECORDED ON REEL 013505 FRAME 0917;ASSIGNORS:TAJIMA, MASAYA;KOGISO, KATSUYA;WATANABE, MITSUO;AND OTHERS;REEL/FRAME:014169/0162

Effective date: 20020917

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION