US20030017658A1 - Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film trasistor, thin film transistor array and image display using it - Google Patents

Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film trasistor, thin film transistor array and image display using it Download PDF

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US20030017658A1
US20030017658A1 US10/203,517 US20351702A US2003017658A1 US 20030017658 A1 US20030017658 A1 US 20030017658A1 US 20351702 A US20351702 A US 20351702A US 2003017658 A1 US2003017658 A1 US 2003017658A1
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single crystal
film
substrate
crystal film
diffracted light
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Hikaru Nishitani
Makoto Yamamoto
Yoshinao Taketomi
Shinchi Yamamoto
Masanori Miura
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Panasonic Holdings Corp
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Assigned to MATSUSHITA ELECTRIC INDUSTRILA CO., LTD. reassignment MATSUSHITA ELECTRIC INDUSTRILA CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIURA, MASANORI, YAMAMOTO, MAKOTO, NISHITANI, HIKARU, TAKETOMI, YOSHINAO, YAMAMOTO, SHINICHI
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Definitions

  • the present invention relates to a non-single crystal film and a substrate with a non-single crystal film, a method of and apparatus for fabricating such film and substrate, a method of and apparatus for testing such film and substrate, and a thin film transistor, a thin film transistor array, and an image display device.
  • TFTs thin film transistors
  • a display device having polysilicon TFTs and driving circuit formed on the same substrate driving circuit-contained display device
  • a TFT has, on a substrate such as a silica glass or glass substrate, a semiconductor film divided into sections such as a channel region, a drain region, and a source region, a gate electrode insulated from the semiconductor film, and a drain electrode and a source electrode electrically connected to the drain and source regions, respectively.
  • a laser annealing method is often utilized in which an amorphous film such as an amorphous silicon film is irradiated with a laser beam and then fused and crystallized to form a non-single crystal film such as a polysilicon film.
  • an argon laser an excimer laser using, for example, KrF gas, XeCl gas, or the like is utilized.
  • a beam of several centimeter square emitted from a light source is formed into a rectangular or line-shaped beam with uniform light intensity, via an optical system called homogenizer, and then the beam is irradiated to an amorphous film to crystallize.
  • an optical system called homogenizer In the image display device, in particular, uniformity of the screen is very important, and thus a method where a large area is uniformly crystallized using a relatively large beam is suitably employed.
  • a method where a line-shaped beam is irradiated as scanning is generally employed.
  • a test beam 302 is irradiated to a non-single crystal film 301 having been treated with an excimer laser beam 300 , and a transmitted light 303 and a reflected light 304 of the test beam are detected by a transmitted light detector 305 and a reflected light detector 306 , respectively, to detect the degree of crystallization progress (Japanese Unexamined Patent Publication No. 10-144621 and the like); and (4) Raman spectrometry, an observation using an atomic force microscope, a cross-sectional SEM observation, an X-ray diffraction technique, and the like.
  • the method (1) described above requires an additional step of forming a reflective film and the like, and thus the fabrication process becomes complicated, causing a cost increase.
  • the method (2) described above requires a heating step, and thus a reduction in productivity is brought about.
  • the method has a problem of low yield.
  • a method of fabricating a non-single crystal film according to a first aspect of the present invention may be such that in a method of fabricating a non-single crystal film fabricated by irradiating a laser beam to an amorphous film or microcrystalline film, crystallization or recrystallization is carried out by irradiating a test beam to a region where the laser beam has been irradiated and optimizing an irradiation condition of the laser beam so that a measured value of diffracted light generated from the non-single crystal film becomes a predetermined value.
  • a method of fabricating a non-single crystal film according to a second aspect of the present invention may be such that in the method described in the first aspect, the measured value of the diffracted light is a light intensity of the diffracted light.
  • a method of fabricating a non-single crystal film according to a third aspect of the present invention may be such that in the method described in the first aspect, the irradiation condition of the laser beam is at least one selected from the group consisting of energy, the number of irradiation times, frequency, irradiation interval, scanning speed, and beam intensity distribution.
  • a method of fabricating a non-single crystal film according to a fourth aspect of the present invention may be such that in a method of fabricating a non-single crystal film fabricated by irradiating a laser beam to an amorphous film or microcrystalline film as scanning, crystallization or recrystalization is carried out by irradiating a test beam to a region where the laser beam has been irradiated, recording measured values of diffracted light generated from the non-single crystal film, and irradiating a laser beam again to a region whose measured value does not match a predetermined value.
  • An apparatus for fabricating a non-single crystal film according to a fifth aspect of the present invention may comprise: a laser beam; an optical system for forming a laser beam into a predetermined shape; a light source for a test beam; and a diffracted light detector, wherein crystallization or recrystallization is carried out by irradiating a test beam from the light source to a non-single crystal film fabricated using the laser beam formed by the optical system, detecting, by the diffracted light detector, diffracted light generated from the non-single crystal film, and optimizing an irradiation condition of the laser beam so that a measured value obtained by the detection becomes a predetermined value.
  • An apparatus for fabricating a non-single crystal film according to a sixth aspect of the present invention may be such that in the apparatus described in the fifth aspect, the measured value of the diffracted light is a light intensity of the diffracted light.
  • An apparatus for fabricating a non-single crystal film according to a seventh aspect of the present invention may be such that in the apparatus described in the fifth aspect, the irradiation condition of the laser beam is at least one selected from the group consisting of energy, the number of irradiation times, frequency, irradiation interval, scanning speed, and beam intensity distribution.
  • a method of testing a non-single crystal film according to an eighth aspect of the present invention may be such that a non-single crystal film is irradiated with a test beam and diffracted light generated from the non-single crystal film is detected.
  • a method of testing a non-single crystal film according to a ninth aspect of the present invention may be such that in the method described in the eighth aspect, the diffracted light is divided into wavelengths.
  • a method of testing a non-single crystal film according to a tenth aspect of the present invention may be such that in the method described in the eighth aspect, an angle distribution or position distribution of the diffracted light is measured.
  • An apparatus for testing a non-single crystal film may comprise: a light source for a test beam; and a diffracted light detector, wherein a non-single crystal film is irradiated with a test beam from the light source and an intensity of diffracted light generated from the non-single crystal film is detected.
  • An apparatus for testing a non-single crystal film according to a twelfth aspect of the present invention may be such that means for dividing the diffracted light into wavelengths is provided.
  • An apparatus for testing a non-single crystal film according to a thirteenth aspect of the present invention may be such that the diffracted light detector is a device for measuring an angle distribution or position distribution of the light intensity of the diffracted light.
  • a method of fabricating a non-single crystal film according to a fourteenth aspect of the present invention may comprise at least: depositing an amorphous film or microcrystalline film on a substrate; and crystallizing, by fusion, the amorphous film or the microcrystalline film by irradiating a laser to the amorphous film or the microcrystalline film, thereby forming a non-single crystal film, wherein the crystallizating is carried out with the substrate having been cooled.
  • An apparatus for fabricating a non-single crystal film according to a fifteenth aspect of the present invention may be such that in the method described in the fourteenth aspect, in the crystallizing, a temperature of the substrate is maintained at 10° C. or lower.
  • a method of fabricating a non-single crystal film according to a sixteenth aspect of the present invention may be such that in an apparatus for fablicating a non-single crystal film fabricated by irradiating a laser beam to an amorphous film or microcrystalline film formed on a substrate, means for cooling the substrate is provided.
  • An apparatus for fabricating a non-single crystal film according to a seventeenth aspect of the present invention may be such that in the device described in the sixteenth aspect, means for measuring a temperature of the substrate, means for heating the substrate, and means for controlling the means for cooling the substrate and the means for heating the substrate, based on a measured value obtained by the means for measuring the temperature of the substrate, are provided.
  • a non-single crystal film according to an eighteenth aspect of the present invention may be such that in a non-single crystal film formed on a substrate, the film satisfies the following expression (1):
  • ⁇ (nm) is a wavelength of a main peak of diffracted light obtained by light irradiation and ⁇ (nm) is a half-width of the wavelength of the main peak.
  • a non-single crystal film according to a nineteenth aspect of the present invention may be such that in a non-single crystal film formed on a substrate, the film satisfies the following expression (2):
  • ⁇ (degree) is an exit angle of strongest diffracted light obtained by monochromatic light irradiation and ⁇ is a half-width of the angle of the diffracted light.
  • a non-single crystal film according to a twentieth aspect of the present invention may be such that the film described in the eighteenth aspect satisfies the following expression (3):
  • a non-single crystal film according to a twenty-first aspect of the present invention may be such that the film described in the nineteenth aspect satisfies the following expression (4):
  • a non-single crystal film according to a twenty-second aspect of the present invention may be such that in a non-single crystal film formed on a substrate, a surface of the thin film has regions having differing peak wavelengths of diffracted light generated by light irradiation.
  • a non-single crystal semiconductor film according to a twenty-third aspect of the present invention may be such that in a non-single crystal semiconductor film for a driving circuit-contained liquid crystal display device, a region corresponding to a pixel portion and a region corresponding to a driving circuit portion have differing peak wavelengths of diffracted light.
  • a non-single crystal film according to a twenty-fourth aspect of the present invention may be such that in the film described in the twenty-second aspect, the peak wavelengths between the regions differ by 200 nm or more.
  • a non-single crystal film according to a twenty-fifth aspect of the present invention may be such that in a -single crystal film formed on a substrate, a surface of the thin film has regions having differing exit angles of diffracted light.
  • a non-single crystal semiconductor film according to a twenty-sixth aspect of the present invention may be such that in a non-single crystal semiconductor film for a driving circuit-contained liquid crystal display device, a region corresponding to a pixel portion and a region corresponding to a driving circuit portion have differing exit angles of diffracted light.
  • a non-single crystal film according to a twenty-seventh aspect of the present invention may be such that in a non-single crystal film formed on a substrate, a peak shift quantity by Raman spectrometry is 3 cm ⁇ 1 or less than that of single crystal.
  • a substrate with a non-single crystal film according to a twenty-eighth of the present invention may be such that in a substrate with a non-single crystal film fabricated by irradiating a laser beam to an amorphous film or microcrystalline film formed on a substrate surface with a base film interposed therebetween, an impurity concentration of the base film is 0.001% or less than that of the substrate.
  • a non-single crystal film according to a twenty-ninth aspect of the present invention may be such that in a non-single crystal film formed on a substrate, a surface of the thin film has a region in which diffracted light is generated by light irradiation and the diffracted light can be detected.
  • a non-single crystal film according to a thirtieth aspect of the present invention may be such that in the non-single crystal film described in the twenty-ninth aspect, the region includes a rectangle such that at least one side thereof is 0.5 mm or more.
  • a thin film transistor according to a thirty-first aspect of the present invention may be such that a non-single crystal film described in any one of the eighteenth to thirtieth aspects is used as a semiconductor film.
  • a thin film transistor array according to the thirty-second aspect of the present invention may be such that the thin film transistor described in the thirty-first aspect is formed on a substrate.
  • An image display device may be such that the thin film transistor array described in the thirty-second aspect is used.
  • FIG. 1 is a structural view schematically showing the main part of an apparatus for fabricating a polysilicon film according to Embodiment 1 of the present invention.
  • FIG. 2 is a graph showing changes in the intensity of diffracted light.
  • FIG. 3 is a structural view schematically showing the main part of an apparatus for testing a polysilicon film according to Embodiment 2 of the present invention.
  • FIG. 4 is a cross-sectional view schematically showing an example of a thin film transistor according to Embodiment 3 of the present invention.
  • FIG. 5 is a structural view schematically showing an apparatus for fabricating a polysilicon film according to Embodiment 4 of the present invention.
  • FIGS. 6 ( a ) to 6 ( d ) are graphs showing the relationship between ELA energy and TFT mobility.
  • FIG. 7 is a structural view schematically showing an apparatus for fabricating a polysilicon film according to Embodiment 5 of the present invention.
  • FIG. 8 is a structural view schematically showing an apparatus for fabricating a polysilicon film according to Embodiment 6 of the present invention.
  • FIG. 9 is a graph showing the relationship between the wavelength distribution of diffracted light and the intensity of diffracted light.
  • FIG. 10 is a graph showing the relationship between substrate temperature and yield.
  • FIGS. 11 ( a ) and 11 ( b ) are graphs showing the TFT mobility and the peak wavelength of diffracted light at measuring points of a polysilicon film.
  • FIG. 11( a ) shows the case of a prior art polysilicon film and
  • FIG. 11( b ) shows the case of a polysilicon film of the present invention.
  • FIG. 12 is a graph showing the relationship between the exit angle distribution of diffracted light and the amount of diffracted light.
  • FIG. 13 is a graph showing the relationship between ELA energy and Raman peak position.
  • FIG. 14 is a graph showing the relationship between peak shift quantity and TFT mobility.
  • FIG. 15 is a plan view showing the case where there are regions having differing peak wavelengths of diffracted light generated when light is irradiated or having differing exit angles of the strongest diffracted light.
  • FIG. 16 is a graph showing the distance from the interface between a glass substrate and a base film and impurity concentration.
  • FIG. 17 is a structural view schematically showing an example of a prior art testing apparatus. Description of the Reference Numerals 1. Glass substrate 2. Amorphous silicon film 3. Test beam 4. Diffracted light detector 5. Laser beam 6. Polysilicon film 7. Micro-rough structure 8. Diffracted light 9. Substrate-transport stage 10. Cylindrical lens
  • Embodiment 1 is such that diffracted light generated by a micro-rough configuration of the surface of a p-Si film is utilized.
  • the present inventors found, in the process of intensive study directed toward preventing property variations from arising in a non-single crystal semiconductor film, that a polysilicon film (p-Si film) fabricated by irradiation of excimer laser, which is ultraviolet light, has a substantially regular rough structure present on the surface thereof and this rough structure has a strong correlation with the degree of crystallization and that the polysilicon film shows various aspects depending on laser irradiation conditions.
  • the correlation between crystallinity and TFT properties has been confirmed.
  • the present inventors therefore irradiated a test beam to a crystalline silicon film fabricated under certain crystallization conditions, and spectral light from green to violet was observed.
  • the present inventors thus found that how the spectral light appears varies greatly with the irradiation angle of test beam and with the observation angle.
  • the present inventors found that by this observation it is possible to see the state of the entire substrate in a short period of time and further to identify, at a glance, portions having differing degrees of crystallization (in most cases, portions with low crystallinity).
  • the present inventors confirmed that light is diffracted by the rough structure of the p-Si film surface, thereby generating spectral light.
  • the parameters for crystallization conditions such as the intensity of laser beam, the number of irradiation times, oscillation frequency, and laser scanning speed, are changed, the angle, wavelength, and intensity at which diffracted light is observed also slightly change.
  • the present inventors found that by irradiating a test beam to a region where the laser beam has been irradiated and monitoring diffracted light from the non-single crystal film, it is possible to detect the degree of crystallization progress in real time, using the measured values (such as light intensity) of the diffracted light as the index and that it is possible to realize uniform crystallinity by giving feedback, based on the results of the detection, to the laser irradiation conditions and controlling irradiation conditions and as a result, it is possible to suppress variations in film properties.
  • the group of inventions represented by Embodiment 1 was completed.
  • FIG. 1 is a structural view schematically showing the main part of an apparatus for fabricating a polysilicon film according to the present embodiment.
  • Reference numeral 1 indicates a glass substrate
  • reference numeral 2 an amorphous silicon film (a-Si film)
  • reference numeral 3 a test beam generated by a test beam oscillator (not shown in the figure)
  • reference numeral 4 a diffracted light detector
  • reference numeral 5 an excimer laser beam generated by an excimer laser oscillator (not shown in the figure)
  • reference numeral 6 a polysilicon film (p-Si film)
  • reference numeral 7 a micro-rough structure
  • reference numeral 9 a substrate-transport stage.
  • an optical system for forming an excimer laser beam into a line beam of 350 ⁇ m in width is not shown in the figure except for a cylindrical lens 10 that composes a part thereof.
  • a method of fabricating a polysilicon film using a fabrication apparatus with the above-described configuration is as follows.
  • a glass substrate 1 having an a-Si film 2 formed thereon is prepared and the glass substrate 1 is placed on a substrate-transport stage 9 .
  • the glass substrate with an a-Si film can be obtained, for example, by depositing an SiO 2 base film of about 300 nm in thickness (not shown in the figure) on a glass substrate by the TEOS CVD method or the like so as to remove impurities from the glass, and then depositing an a-Si film 2 of about 50 nm in thickness by the plasma CVD method.
  • a heat treatment is performed at 450° C. for one hour.
  • a test beam 3 is irradiated to a region where the excimer laser beam has been irradiated, and diffracted light 8 of the test beam is monitored by a diffracted light detector 4 .
  • the test beam 3 that reached a region not having been crystallized only makes mirror reflection due to the smoothness of the surface of the a-Si 2 and does not reach at all the diffracted light detector 4 disposed outside the axis.
  • the rough structure of the surface thereof is coarse and has low regularity, and therefore diffracted light is hardly generated and only a slight amount of scattered light is generated.
  • the surface of the p-Si film 6 treated in such a laser energy range that increases crystallinity has a substantially regular micro-rough structure 7 , which reflects the crystallinity. Therefore, when the test beam 3 is irradiated to this region, diffracted light 7 with sharp directivity is generated and the light reaches the detector 4 . This light greatly differs from the scattered light level, and thus these two different lights can be clearly distinguished. Accordingly, it is possible to see the process where the state of the p-Si having been crystallized is changing slightly, and therefore the most suitable crystallization conditions can be determined with high sensitivity.
  • the amount of laser energy necessary for crystallization depends greatly on the thickness of an a-Si film. Accordingly, in the case where there are variations in the thicknesses of a-Si films between a plurality of substrates or in the substrate plane, the optimum laser energy turns out to be different from portion to portion. Conventionally, all substrates were treated with fixed laser energy and therefore the variations in thickness directly resulted in variations in properties. However, according to the present embodiment, it is possible to carry out the crystallization process without a great loss by, for example, the steps as will be described below, while determining optimal conditions for each substrate.
  • a laser beam is irradiated to the periphery of a substrate and the laser energy is controlled to the level at which diffracted light can be detected.
  • the laser energy here is referred to as E0.
  • E0 the laser energy
  • an a-Si film is fabricated such that the film thickness is thicker by about 10% at the center of the substrate than the periphery of the substrate, and therefore the appropriate energy for the center of the substrate is somewhat higher than E0.
  • a uniform non-single crystal film can be fabricated over the entire substrate because laser energy is adjusted to the center of the margin in advance.
  • the test beam can be white light or a monochromatic light laser beam such as an He—Ne laser beam, an Ar laser beam, and a YAG laser beam, and that it is preferable that the test beam be formed so as to substantially correspond to a region where an excimer laser beam has been irradiated.
  • a filter for cutting the wavelength of an excimer laser beam be disposed in front of the diffracted light detector so as to detect only the diffracted light of the test beam.
  • FIG. 3 is a structural view schematically showing the main part of an apparatus for testing a polysilicon film.
  • This testing apparatus has a configuration such that the oscillator of excimer laser beam 5 is removed from the fabrication apparatus described in Embodiment 1.
  • a method of testing a polysilicon film using an apparatus with the above-described configuration is carried out as follows.
  • an a-Si film is formed on a glass substrate, and then using a conventionally known laser annealing system, the a-Si film is fused and crystallized to form a p-Si film, thereby preparing a glass substrate 1 with a p-Si film 6 .
  • the glass substrate 1 with the p-Si film 6 is placed on a substrate-transport stage 9 .
  • a test beam 3 is irradiated to the p-Si film 6 .
  • diffracted light generated by a micro-rough structure 7 of the p-Si film 6 is detected by a diffracted light detector 4 and recorded. In such a manner, it is possible to test the crystallization state of the p-Si film 6 .
  • This embodiment relates to a thin film transistor that utilizes, as the semiconductor film, a non-single crystal film described in each of the foregoing embodiments.
  • FIG. 4 shows one example of a thin film transistor.
  • Reference numeral 61 indicates a glass substrate and reference numeral 62 a base film.
  • Reference numerals 63 , 64 , 65 , and 66 indicate a channel region, an LDD region, a source region, and a drain region, respectively, and these compose a semiconductor film 67 .
  • Reference numeral 69 indicates a gate insulating film, reference numeral 70 a gate electrode, reference numeral 71 an interlayer insulating film, reference numeral 72 a source electrode, and reference numeral 73 a drain electrode.
  • a thin film transistor with the above-described configuration can be fabricated, for example, as follows.
  • a p-Si film is formed on a glass substrate, and then the film is patterned by photolithography and dry etching. Subsequently, a gate insulating film made of SiO 2 with a thickness of 100 nm is formed by, for example, the TEOS CVD method. Next, an aluminum film is sputtered and patterned into a given shape by etching, thereby forming a gate electrode. Then, using the gate electrode as a mask, the source and drain regions are implanted with the necessary kinds of dopants, using an ion doping system.
  • an interlayer insulating film made of Si oxide is deposited by the atmospheric pressure CVD method to cover the gate insulating film, and a contact hole that reaches each of the source and drain regions of the p-Si film is made in the interlayer insulating film and the Si oxide film.
  • a titanium film and an aluminum film are sputtered and patterned into a given shape by etching, thereby forming a source electrode and a drain electrode.
  • a thin film transistor as shown in FIG. 4 is obtained.
  • the thin film transistor thus obtained can be used in thin film transistor arrays and image display devices such as liquid crystal display devices, organic EL display devices, and the like.
  • the present embodiment is such that the substrate is cooled prior to laser annealing.
  • the present inventors studied, in the process of intensive study directed towards realizing higher properties of p-Si film, the relationship between substrate temperature and excimer laser annealing (ELA) energy, and consequently found that the lower the substrate temperature, the larger the energy range in which a p-Si film without defects can be formed.
  • ELA excimer laser annealing
  • the present inventors found that when the substrate is cooled so that the substrate temperature is lower than room temperature, the allowable range of laser energy is increased and therefore a p-Si film without deterioration and ablation can be formed. Thus, the group of inventions represented by the present embodiment was completed.
  • FIG. 5 is a structural view schematically showing an apparatus for fabricating a polysilicon film (laser annealing apparatus) according to the present embodiment.
  • This fabrication apparatus is such that in a process chamber 201 there is arranged a substrate-transport stage 203 on which a substrate with an a-Si film 202 is placed, and the substrate with the a-Si film 202 can move by the movement of the substrate-transport stage 203 horizontally and in both the lengthwise and crosswise directions.
  • a chamber window 204 through which a laser beam is entered is provided so that the substrate with the a-Si film 202 can be irradiated with a laser beam 206 oscillated by a pulse laser oscillator 205 via a light attenuator 207 , a reflecting mirror 208 , an optical system 209 for forming light, and a reflecting mirror 210 .
  • a cooling system is mounted, and thus by cooling the inside of the chamber, the substrate can be cooled to a predetermined temperature lower than room temperature.
  • the above-described cooling system comprises, as means for cooling the substrate, a liquid nitrogen preservation tank 211 , an inducting tube 212 for inducting nitrogen gas vaporized in the preservation tank into the chamber, and a discharging tube 213 for discharging the gas after the substrate has been subjected to the cooling process.
  • the cooling system further comprises a thermocouple 214 serving as means for measuring the substrate temperature, a heater 215 serving as means for heating the substrate, and a controller 216 for controlling the means for cooling the substrate and the means for heating the substrate based on the temperature measured by the means for measuring the substrate temperature.
  • the flexibility of setting the substrate cooling temperature improves, and accordingly it is possible to control the substrate temperature to desired temperatures.
  • a glass substrate having formed thereon an a-Si film is prepared and the glass substrate is placed on a substrate-transport stage.
  • the glass substrate with an a-Si film can be obtained, for example, by depositing an SiO 2 base film of about 300 nm in thickness on a glass substrate by the TEOS CVD method or the like so as to remove impurities from the glass, and then depositing an a-Si film of about 50 nm in thickness by the plasma CVD method.
  • a heat treatment is performed at 450° C. for one hour.
  • the inside of the process chamber is cooled using the cooling system to cool the glass substrate.
  • the substrate temperature is preferably 10° C. or lower. This is because when the allowable range of energy density is approximately 40 mJ/cm 2 , stable fabrication can be obtained
  • an excimer laser is irradiated to the a-Si film to fuse and crystallize, thereby forming a p-Si film.
  • the laser irradiation is performed, for example, by using an XeCl pulse laser (wavelength 308 nm), under conditions that irradiation is performed 300 times at one point with the substrate being moved.
  • the state of the silicon film changes with the number of laser beam irradiation times but the tendency that the lower the temperature of the substrate, the larger the energy range of the laser beam in which a p-Si film having high properties can be formed does not change, and thus a multiple number of irradiation does not cause any problems.
  • the p-Si film thus obtained is exposed, for example, to hydrogen plasma at 450° C. for 2 hours. Thereby, a number of dangling bonds formed during crystallization disappear. Thus, a p-Si film without defects such as property variations can be obtained.
  • a p-Si film is formed by irradiating a laser beam to an a-Si film, generally, by irradiating a film at an energy density of about 160 mJ/cm 2 or more at room temperature, fusion and crystallization occur and thus a p-Si film is formed.
  • a p-Si film has a large crystal grain size of about 1 ⁇ m, the film has high carrier mobility.
  • the film needs to be irradiated at room temperature and at an energy density in the range from 370 mJ/cm 2 to 380 mJ/cm 2 .
  • the film in the case, for example, where the substrate is cooled to a temperature of ⁇ 50° C., in order to form a p-Si with a large grain size of 1 ⁇ m or more without defects such as deterioration and ablation, the film should be irradiated with a laser beam at an energy density in the range from 395 mJ/cm 2 to 425 mJ/cm 2 .
  • FIG. 6 shows the field-effect mobility (mobility) of n-ch for the case where polysilicon was formed by changing laser energy under conditions of a substrate temperature being 380° C., room temperature, ⁇ 50° C., and ⁇ 100° C., and subsequently a TFT was fabricated.
  • the graph shows that while the mobility of the region having a large grain size is over 250 cm 2 /VS, the lower the substrate temperature, the wider the allowable range of laser energy.
  • Vt properties are due to the phenomenon that upon laser annealing not only the temperature of the film but also the temperatures of the base film and substrate are elevated and therefore impurities in the substrate diffuse into the base film and non-single crystal film.
  • impurities in the substrate diffuse into the base film and non-single crystal film.
  • the influence of the diffusion of impurities is becoming greater.
  • impurity diffusion is suppressed.
  • a polycrystalline thin film with stable properties such as Vt properties can be obtained.
  • FIG. 7 is a structural view schematically showing an apparatus for fabricating a polysilicon film according to the present embodiment. This fabrication apparatus is different from the apparatus in Embodiment 4 in that the apparatus has a different cooling system.
  • a cooling system of this apparatus comprises an He freezer 220 serving as a cooler, a vacuum device 221 for degassing the chamber, a heater 215 serving as a heating device, a thermocouple 214 serving as a substrate temperature measuring system, and a controller 216 .
  • the He freezer 220 is a device for cooling a substrate by circulating the vaporization and liquefaction of liquid helium. With this device, it became possible to easily cool the substrate to cryogenic temperatures and the maintenance became easier.
  • FIG. 8 is a structural view schematically showing an apparatus for fabricating a polysilicon film according to the present embodiment.
  • This fabrication apparatus comprises, in addition to a process chamber 201 , a conveyor for transporting the substrate in 225 , a chamber for cooling a first substrate 226 , a chamber for cooling a second substrate 227 , a chamber for heating the first substrate 228 , a chamber for heating the second substrate 229 , and a conveyor for transporting the substrate out 230 .
  • the p-Si films fabricated using the fabrication methods and fabrication apparatuses described in the foregoing Embodiments 4 to 6 can be used as the semiconductor films for thin film transistors.
  • such p-Si films can be applied to thin film transistor arrays and image display devices such as liquid crystal display devices.
  • This embodiment is a combination of the foregoing Embodiments 1 and 4. Specifically, after the substrate has been cooled, excimer laser irradiation is performed, followed by test beam irradiation, and then diffracted light is monitored. Based on the results of the monitoring, laser irradiation is performed again.
  • the p-Si film thus fabricated is such a film that was laser annealed in a wide laser allowable range and also the film was obtained by, after examining defects in crystallinity using diffracted light, performing laser annealing again, and therefore a film with, in particular, uniform crystallinity is obtained.
  • the present embodiment relates to p-Si films fabricated in each of the foregoing embodiments, wherein physical quantities using the main peak wavelength of diffracted light generated when light is irradiated and the half-width of the wavelength are specified.
  • ⁇ (nm) is the main peak wavelength of diffracted light obtained by test beam irradiation and ⁇ (nm) is the half-width of the main peak wavelength.
  • the diffracted light of test beam is sharp, and therefore the micro-rough structure of the p-Si film surface has high regularity. Accordingly, the p-Si film does not have grain size variations and has a high periodicity.
  • FIG. 9 shows the results of measurements of diffracted light intensities.
  • the diffracted light intensities were obtained by irradiating white light, serving as the test beam, to a p-Si film fabricated by setting such conditions that a substrate temperature being 380° C., room temperature (25° C.), ⁇ 50° C., and ⁇ 100° C., and then laser annealing, and diffracted light was divided into wavelengths.
  • the horizontal axis indicates wavelength distributions when the main peak wavelength ⁇ is 100%. From this figure, it can be seen that the higher the substrate temperature, the greater ⁇ / ⁇ is.
  • FIG. 10 shows the relationship between substrate temperature and yield. From this figure, it can be seen that yield increases dramatically when the film is fabricated with a substrate temperature being slightly lower than room temperature.
  • the variation ⁇ / ⁇ ( ⁇ : standard deviation) of the main peak wavelength of diffracted light, which is generated when a test beam is irradiated to a plurality of regions on a p-Si film formed on the substrate, is preferably 0.15 or less, and more preferably 0.10.
  • FIGS. 11 ( a ) and 11 ( b ) show the electron mobility and the main peak wavelength of diffracted light at each measuring point (12 points) of a p-Si film formed on the substrate.
  • FIG. 11( a ) shows the case of a p-Si film fabricated by a prior art fabrication method
  • FIG. 11( b ) shows the case of a p-Si film fabricated by a fabrication method described in Embodiment 1. From these drawings, it was confirmed that the p-Si film fabricated in Embodiment 1 had less variations than the prior art p-Si film.
  • the present embodiment relates to p-Si films fabricated in each of the foregoing embodiments, wherein physical quantities using the exit angle of diffracted light of a test beam and the half-width of the angle are specified.
  • ⁇ (degree) is the exit angle of diffracted light having the highest light intensity among diffracted light obtained by irradiating monochromatic light serving as a test beam and ⁇ (degree) is the half-width of the exit angle of the diffracted light.
  • the diffracted light of test beam is sharp, and therefore the micro-rough structure of the p-Si film surface has high regularity. Accordingly, the p-Si film does not have grain size variations and has a good periodicity.
  • FIG. 12 shows the results of measurements of the angle of a diffracted light detector at which the maximum amount of light can be obtained and distributions in accordance with angles, when monochromatic light as a test beam is irradiated to a p-Si film fabricated by setting such conditions that a substrate temperature being 380° C., room temperature (25° C.), ⁇ 50° C., and ⁇ 100° C., and then laser annealing.
  • the horizontal axis indicates distributions when the exit angle ⁇ at the time of detecting the maximum amount of light is 100. From the figure, it can be seen that the lower the substrate temperature, the sharper the diffracted light.
  • the variation ⁇ /(sin ⁇ ) ( ⁇ : standard deviation) of the strongest diffracted light, which is generated when a test beam is irradiated to a plurality of regions on a p-Si film formed on the substrate, is preferably 0.15 or less, and more preferably 0.10.
  • the present embodiment relates to p-Si films fabricated in each of the foregoing embodiments, wherein the peak shift quantity by Raman spectrometry is specified.
  • the peak shift quantity by Raman spectrometry is 3 cm ⁇ 1 or less in comparison with a single crystal film.
  • film distortion occurs during the period from hardening of polysilicon to cooling of the substrate, due to the difference in thermal expansion rate between the base film and the p-Si film.
  • the peak shift quantity is within the above-described range, and therefore the film distortion is small. Accordingly, crack defects rarely occur and an advantageous effect such as high carrier mobility is provided.
  • FIG. 13 shows the relationship between ELA energy and Raman peak position. From this figure, it was confirmed that p-Si films fabricated in Embodiments 1 and 4 have greater Raman peak positions and smaller shift quantities from the Raman peak position of a non-single crystal film (approximately 520 cm ⁇ 1 ), than a p-Si film fabricated by a conventional method.
  • FIG. 14 shows the relationship between peak shift quantity and carrier mobility. From this figure, it was confirmed that when the peak shift quantity is 3 cm ⁇ 1 or less, carrier mobility increases dramatically.
  • the present embodiment relates to p-Si films fabricated in each of the foregoing embodiments, wherein there are regions having differing main peak wavelengths of diffracted light or differing exit angles of the strongest diffracted light.
  • the peak wavelengths of diffracted light generated by light irradiation or the exit angles of the strongest diffracted light generated by light irradiation are different between the regions A and B. Accordingly, even though a film is made of the same polysilicon, the film has regions having differing carrier mobilities or the like. It is preferable that the difference in peak wavelength be 200 nm or more, because with these values, differing regions can be clearly divided.
  • a p-Si film with the above-described configuration can be easily fabricated by using the above-described fabrication apparatuses and methods. Specifically, with the above-described fabrication apparatuses and methods, crystallization can be performed by using, as the index, the main peak wavelength of diffracted light or the exit angle of the strongest diffracted light, and thus by adjusting these values to predetermined values and then performing laser annealing, regions having differing properties can be formed.
  • a p-Si film having regions divided in such a manner that is shown in FIG. 15 can be used in manufacturing driving circuit-contained liquid crystal display devices.
  • TFTs in a pixel portion and TFTs in a driving circuit portion require differing properties.
  • the TFTs in the pixel portion require, in particular, uniformity between the TFTs in the pixel portion so as not to cause variations in image display, while the TFTs in the driving circuit portion highly require fast response time rather than uniformity.
  • uniform laser beam irradiation was carried out in fabricating TFTs in the pixel and driving circuit portions, and therefore satisfactory properties were not imparted to the TFTs in either portion.
  • a p-Si film exhibiting desired crystallinity can be formed using diffracted light as the index, by forming the pixel portion and the driving circuit portion separately, it is possible to form a film that satisfies required properties for each portion.
  • This embodiment relates to a p-Si film formed on the substrate with a base film interposed therebetween, wherein impurity incorporation from the substrate is minimized.
  • the impurity concentration of a base film disposed 1000 ⁇ away from the interface between the substrate and the base film is 0.001% or less than that of the substrate.
  • Such a substrate with a p-Si film can be obtained by using the fabrication apparatus and method in accordance with Embodiment 4, wherein laser annealing is performed with the substrate having been cooled.
  • FIG. 16 shows the relationship between the distance from the substrate surface and impurity concentration. From this drawing, it was confirmed that when the substrate is cooled and laser annealed, seeping of Na contained in the glass substrate can be suppressed.
  • specific numerical values are provided as follows.
  • the substrate a glass substrate with an Na concentration of 5 ⁇ 10 21 cm ⁇ 3 was used.
  • the impurity concentration of the base film located 1000 ⁇ away from the substrate surface
  • the substrate temperature was room temperature
  • 9 ⁇ 10 16 cm ⁇ 3 when the substrate temperature was ⁇ 100° C., 1.5 ⁇ 10 16 cm ⁇ 3 .
  • This embodiment relates to a p-Si film having a region that allows for measurement of diffracted light when monitoring by diffracted light.
  • a testing pattern is formed on a surface of the film where diffracted light can be measured, thereby enabling a process check.
  • the testing pattern should be such a shape that includes a rectangle with a long side of 0.5 ⁇ m or more and a short side larger than a wavelength to be measured, with the p-Si film being exposed.
  • the length is important so as to improve measurement accuracy and thus the shape is not necessarily a square.
  • the p-Si film is not necessarily exposed and may be covered with a transparent thin film or a metal thin film as long as the film does not disturb the micro-rough structure.
  • a transparent thin film or a metal thin film as long as the film does not disturb the micro-rough structure.
  • diffracted light can be measured more accurately. It is preferable that the thickness of such a thin film be 500 ⁇ or less.
  • the present invention has been described above with reference to several embodiments thereof. However, the present invention is, of course, not limited to these embodiments.
  • the present invention can be applied to chalcogenide films used in CD-RW, MgO films used in PDP, and the like.
  • a non-single crystal film is tested by monitoring diffracted light and crystallized by giving feedback, based on the test results, to the irradiation conditions such as laser intensity, and therefore variations in grain size are reduced and the periodicity of grain size is improved. As a result, a non-single crystal film with stable properties such as mobility can be obtained.
  • the substrate is cooled and laser annealed with a wider allowable range of laser energy, and thus variations in grain size are reduced and the periodicity of grain size is improved. As a result, a non-single crystal film with stable properties such as mobility can be obtained.
  • the present invention is effectively applied to fields in which higher properties are demanded, such as thin film transistors, thin film transistor arrays using such thin film transistors, and image display devices using such thin film transistor arrays such as liquid crystal display devices.

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