US20020149014A1 - Light-receiving device and photodetector comprising light-receiving device - Google Patents

Light-receiving device and photodetector comprising light-receiving device Download PDF

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US20020149014A1
US20020149014A1 US10/088,275 US8827502A US2002149014A1 US 20020149014 A1 US20020149014 A1 US 20020149014A1 US 8827502 A US8827502 A US 8827502A US 2002149014 A1 US2002149014 A1 US 2002149014A1
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light
lights
demultiplexed
photodetector
incident light
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US10/088,275
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Takashi Tagami
Kenichi Nakama
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Nippon Sheet Glass Co Ltd
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Individual
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Assigned to NIPPON SHEET GLASS CO., LTD. reassignment NIPPON SHEET GLASS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAGAMI, TAKASHI, NAKAMA, KENICHI
Publication of US20020149014A1 publication Critical patent/US20020149014A1/en
Priority to US10/959,960 priority Critical patent/US7372124B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the present invention relates to a light-receiving element for continuously detecting a light intensity and a barycenter thereof for the spectrum of a long-wavelength band (e.g., 1.3-1.55 ⁇ m band) used in an optical communication field, a photodetector employing such a light-receiving element, and an optical demultiplexer using such a photodetector.
  • a long-wavelength band e.g., 1.3-1.55 ⁇ m band
  • An optical demultiplexer for example, Light Detecting System PSS-100 commercially available by Shimazu Seisakusho
  • PSS-100 Light Detecting System
  • the photodetector employed in this optical demultiplexer is a light-receiving element array and is used as a spectrum monitor for wavelength.
  • the barycenter of a light intensity is monitored by dividing the spectrum of one wavelength by means of an array of light-receiving elements (e.g., five elements). Therefore, the resolution of the photodetector is determined by an array pitch of the light-receiving elements. In this manner, the conventional photodetector may merely obtain the resolution corresponding to the array pitch of the light-receiving elements, so that it is difficult for the conventional photodetector to further increase its resolution.
  • the barycenter of a light intensity means herein the barycenter of spectrum distribution of a wavelength.
  • a semiconductor position sensor for detecting the position of a light spot is used as a light-receiving element array of the photodetector in the optical demultiplexer. Because the semiconductor position sensor is a non-divided type of element different from the light-receiving element array described above, the semiconductor position sensor may detect continuously and spatially the barycenter of a light intensity.
  • the sensor As a conventional semiconductor position sensor, the sensor has been known in which a p-type resistor layer is provided on the top surface of a high-resistance Si substrate (i-type layer), on the bottom surface thereof a n-type layer is provided, and two electrodes are provided oppositely on the p-type resistor layer.
  • a p-type resistor layer is provided on the top surface of a high-resistance Si substrate (i-type layer), on the bottom surface thereof a n-type layer is provided, and two electrodes are provided oppositely on the p-type resistor layer.
  • the conventional semiconductor position sensor uses a Si substrate as described above, and then has a poor sensitivity in a long-wavelength band for an optical communication. Therefore, in a case that the conventional semiconductor position sensor is used for a light-receiving element array of an optical demultiplexer, it is difficult to detect the barycenter of a light intensity of light having a long-wavelength band.
  • An object of the present invention is to provide a light-receiving element used in a photodetector of an optical demultiplexer, which may detect the barycenter of a light intensity of light including a long-wavelength band.
  • Another object of the present invention is to provide a photodetector of an optical demultiplexer, which uses such a light-receiving element.
  • a further object of the present invention is to provide an optical demultiplexer having an increased resolution using such a photodetector.
  • a semiconductor position sensor using III-V group compound semiconductor having a good sensitivity in a long-wavelength band (e.g., 1.55 ⁇ m band) for an optical communication is used as a light-receiving element in order to monitor the spectrum of the long-wavelength band.
  • a first aspect of the present invention is a light-receiving element for detecting a light intensity and a barycenter thereof for an incident light of a long-wavelength, the light-receiving element comprising a semiconductor layer of III-V group compound semiconductor; a first conductivity-type of resistor layer provided on the top surface of the semiconductor layer; a second conductivity-type, opposite to the first conductivity-type, of substrate provided on the bottom surface of the semiconductor layer; and at least one pair of opposing electrodes provided on the resistor layer.
  • a second aspect of the present invention is a photodetector for detecting a light intensity and a barycenter thereof for each of lights demultiplexed from an incident light, the incident light including a plurality of wavelengths, the photodetector comprising one or more light-receiving elements described above.
  • a third aspect of the present invention is an optical demultiplexer for demultiplexing an incident light including multiplexed wavelengths, the optical demultiplexer comprising an optical means for demultiplexing the incident light into a plurality of lights; and a photodetector for receiving the plurality of light demultiplexed by the optical means.
  • An array of light-receiving elements described above may be used for the photodetector.
  • FIG. 1A is a plan view of a light-receiving element in accordance with the present invention.
  • FIG. 1B is a cross-sectional view taken along the X-Y line in FIG. 1A.
  • FIG. 2 is a diagram of a circuit for measuring the position upon which an incident light impinges using a current from an light-receiving element.
  • FIG. 3 is a diagram of a time-division type of photodetector.
  • FIG. 4 is a diagram of a photodetector for detecting a light intensity and the barycenter thereof for each of demultiplexed lights.
  • FIG. 5 is a plan-view of the photodetector shown in FIG. 4.
  • FIG. 6 is a diagram of another photodetector for detecting a light intensity and the barycenter thereof for each of demultiplexed lights.
  • FIG. 7 is a diagram of an optical demultiplexer in accordance with the present invention.
  • FIG. 8 is a diagram illustrating the structure for detecting each barycenter of k 1 wavelengths of C-band and k 2 wavelengths of L-band.
  • FIG. 9 shows an example in which two lines of light-receiving elements each line having the same number of elements are integrated in one semiconductor chip.
  • FIGS. 1A and 1B there is shown a light-receiving element in accordance with the present invention, i.e. a light-receiving element 8 for monitoring one wavelength.
  • FIG. 1A is a plan view
  • FIG. 1B is a cross-sectional view taken along the X-Y line in FIG. 1A.
  • an InGaAs layer (i-type layer) 12 and a p-type InP layer 14 are stacked on an n-type InP substrate 10 .
  • Electrodes 16 a and 16 b are formed on both sides of the top surface of the p-type layer 14 , and an electrode (not shown) is formed on the bottom surface of the n-type substrate 10 .
  • the currents I a and I b derived from the electrodes 16 a and 16 b are represented by the following formulas.
  • I a I ⁇ ( L ab ⁇ L a )/ L ab (1)
  • the material of InGaAs system having a high photo sensitivity for a long-wavelength is used, so that a high performance detection of the light impinging position may be possible for a long-wavelength for which the material of Si system has a poor sensitivity.
  • III-V group compound semiconductor such as GaAs, AlGaAs, InAs, InGaAsP, and the like may be used.
  • Ge may be used in an infrared wavelength. The summation of the currents I a and I b is equal to the photocurrent I, so that the intensity of an incident light may be monitored from the photocurrent I.
  • FIG. 2 there is shown a circuit for measuring the position upon which an incident light impinges using the current I a and I b derived from the electrodes 16 a and 16 b of the light-receiving element 8 .
  • the currents I a and I b are amplified by preamplifiers 1 and 2 , respectively, and the amplified currents are summed in an adder 3 to obtain (I a +I b ) as well as are substrated in a substracter 5 to obtain (I a ⁇ I b ) Then, the division (I a ⁇ I b )/(I a +I b ) is calculated in a divider 5 to measure the light impinging position based on the formula (4).
  • the circuit shown in FIG. 2 employs a method for detecting the light impinging position based on the formula (4)
  • the light impinging position may be measured by calculating the division I a /I b based on the formula (3).
  • a time-division type of photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N time-divisioned wavelength by a diffraction grating.
  • FIG. 3 shows a photodetector 20 for monitoring the demultiplexed N lights of wavelengths ⁇ l , ⁇ 2 , . . . , ⁇ N . While the structure of the photodetector 20 is basically the same as that of the light-receiving element 8 shown in FIG. 1, the light-receiving area of the photodetector is formed so large as to receive all the demultiplexed lights.
  • the incident light including N time-divisioned wavelength is demultiplexed into N lights by a diffraction grating 22 .
  • the demultiplexed lights including wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ N . respectively, impinge upon the photodetector 20 .
  • the photodetector may operate in a time-divisional manner to detect the barycenter of a light intensity for each of N demultiplexed lights. Also, each light intensity of N demultiplexed lights may be detected from respective photocurrents as illustrated with reference to FIG. 1.
  • a photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N wavelength by a diffraction grating.
  • FIG. 4 shows a photodetector 30 for monitoring the demultiplexed N lights of wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ N .
  • the photodetector 30 is structured by N light-receiving elements D 1 , D 2 , . . . , D N arrayed in one dimension.
  • Each light-receiving element is a light-receiving element as illustrated with reference to FIG. 1.
  • FIG. 5 shows a plan-view of the photodetector 30 .
  • Respective light-receiving elements are arrayed so that the electrodes 16 a and 16 b of respective element are lined up in an arraying direction of the elements.
  • the incident light including N wavelengths is demultiplexed into N lights by a diffraction grating 22 , and the demultiplexed N lights impinge upon N light-receiving elements, respectively.
  • the barycenter of a light intensity of each of N demultiplexed lights may be detected.
  • each intensity of N demultiplexed lights may be detected from a photocurrent of each light-receiving element as illustrated with reference to FIG. 1.
  • FIG. 6 is a diagram for illustrating this photodetector.
  • an incident light is split into two lights by a half mirror 40 .
  • One split light is demultiplexed into N lights by a diffraction grating 42 , and each barycenter of the light intensities thereof is detected by a first photodetector 30 shown in FIG. 5.
  • the other split light is demultiplexed into N lights by a dittraction grating 44 , and respective light intensities of N demodulated lights are detected by a second photodetector 46 consisting of N photodiodes PD 1 , PD 2 , . . . , P DN each positioned at the focal point of demultiplexed light.
  • the second photodetector 46 may be fabricated so that the light-receiving area thereof is smaller than that of the first photodiode 30 , resulting in the reduction of noise therein. As a result, the second photodetector 46 is suitable for detecting the light intensity of a weak incident light.
  • FIG. 7 shows an optical demultiplexer in an optical communication system based on a wavelength multiplexed transmission, which may be used for demultiplexing a wavelength multiplexed incident light into a plurality of lights each having a different wavelength, and for detecting each light intensity and barycenter thereof for respective demultiplexed lights.
  • the optical demultiplexer comprises components such as one input optical fiber 50 , a collimator lens 52 , a diffraction grating 54 , and an optical detector 56 , which are accommodated in three tubular members fitted to each other.
  • the input optical fiber 50 is fixedly coupled to a window 60 for fixing the fiber by means of a fiber coupling member 62 , the window 60 being an end face of a transparent tube 58 for accommodating the fiber.
  • the collimator lens 52 is fixed to an end of an intermediate tube 64 .
  • the diffraction grating 54 is fixed to a window 68 , the window 68 being an end face of a tube 66 for accommodating the diffraction grating.
  • the tubes 58 and 66 are fitted to both ends of the intermediate tube 64 so as to be movable in the direction of light axis and rotatable around the light axis for active alignment.
  • the light from the input optical fiber 50 impinges upon the diffraction grating 54 via the collimator lens 52 .
  • the light is demultiplexed by the diffraction grating 54 , and the demultiplexed lights pass through the collimator lens 52 to be detected by the photodetector 56 .
  • the photodetector 56 may detect each light intensity and a barycenter thereof for respective demultiplexed lights, as explained in the embodiments 2 and 3 .
  • the structure may be employed in which a wavelength multiplexed light is split into two lights to detect the barycenter of a light intensity by the first photodetector 30 and a light intensity by the second photodetector 46 .
  • FIG. 8 shows the case that, in an optical communication system, an incident light includes k 1 wavelengths (k 1 is an integer equal to or larger than 1) of C-band and k 2 wavelengths (k 2 is an integer equal to or larger than 1) of L-band, the k 1 and k 2 wavelengths being multiplexed.
  • the incident light is demultiplexed into k 1 lights of C-band and k 2 lights of L-band by a diffraction grating 70 , respectively.
  • Respective barycenters of the light intensities of (k 1 +k 2 ) demultiplexed lights may be detected by a first photodetector (not shown) consisting of k 1 light-receiving elements for C-band and a second photodetector (not shown) consisting of k 2 light-receiving elements for L-band.
  • the first and second photodetectors are integrated in one chip. If the incident angles of lights of C and L-bands to the diffraction grating 70 are preferably selected, then the demultiplexed lights of C and L-bands may be collected on two adjacent lines. The first and second photodetectors are arrayed in two lines on the positions upon which the demultiplexed lights impinge. Herein, the incident light of C-band impinges upon the diffraction grating at a smaller angle to the normal of the diffraction grating in comparison with the incident light of L-band.
  • the arrangement of light-receiving element in one semiconductor chip is not limited to a line of k 1 elements of C-band and a line of k 2 elements of L-band, but two lines of elements each line having the same number of elements may be arranged.
  • two lines of elements each line having k 1 element i.e., k 1 elements ⁇ 2 lines
  • two lines of elements each line having k 2 element i.e., k 2 elements ⁇ 2 lines
  • FIG. 9 shows an example in which two lines of light-receiving elements 8 each line having the same number of elements are integrated in one semiconductor chip 72 .
  • the incident light including two bands i.e. C-band and L-band
  • C-band and L-band has been explained hereinbefore.
  • k lines of light-receiving elements may be arranged in two dimensions to detect the demultiplexed lights.
  • the photodetector having described-above structure may be used for the light demultiplexer shown in FIG. 7.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
US10/088,275 2000-07-18 2001-07-10 Light-receiving device and photodetector comprising light-receiving device Abandoned US20020149014A1 (en)

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US7372124B2 (en) 2008-05-13
JP2002033507A (ja) 2002-01-31
WO2002007227A1 (fr) 2002-01-24
TW503587B (en) 2002-09-21
EP1233459A1 (en) 2002-08-21
US20050058454A1 (en) 2005-03-17
KR20020037050A (ko) 2002-05-17
CA2385084A1 (en) 2002-01-24

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