US7372124B2 - Light-receiving element and photodetector using the same - Google Patents
Light-receiving element and photodetector using the same Download PDFInfo
- Publication number
- US7372124B2 US7372124B2 US10/959,960 US95996004A US7372124B2 US 7372124 B2 US7372124 B2 US 7372124B2 US 95996004 A US95996004 A US 95996004A US 7372124 B2 US7372124 B2 US 7372124B2
- Authority
- US
- United States
- Prior art keywords
- light
- lights
- photodetector
- demultiplexed
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000004891 communication Methods 0.000 abstract description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 4
- 230000001419 dependent effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
- G01J3/36—Investigating two or more bands of a spectrum by separate detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the present invention relates to a light-receiving element for continuously detecting a light intensity and a barycenter thereof for the spectrum of a long-wavelength band (e.g., 1.3-1.55, ⁇ m band) used in an optical communication 10 field, a photodetector employing such a light-receiving element, and an optical demultiplexer using such a photodetector.
- a long-wavelength band e.g., 1.3-1.55, ⁇ m band
- An optical demultiplexer for example, Light Detecting System PSS-100 commercially available by Shimazu Seisakusho
- PSS-100 Light Detecting System
- the photodetector employed in this′′′ optical demultiplexer is a light-receiving element array and is used as a spectrum monitor for wavelength.
- the barycenter of a 25 light intensity is monitored by dividing the spectrum of one wavelength by means of an array of light-receiving elements (e.g., five elements). Therefore, the resolution of the photodetector is determined by an array pitch of the light-receiving elements. In this manner, the conventional 30 photodetector may merely obtain the resolution corresponding to the array pitch of the light-receiving elements, so that it is difficult for the conventional photodetector to further increase its resolution.
- the barycenter of a light intensity means herein the barycenter of spectrum distribution of a wavelength.
- a semiconductor position sensor for detecting the position of a light spot is used as a light-receiving element array of the photodetector in the optical demultiplexer. Because the semiconductor position sensor is a non-divided type of element different from the light-receiving element array described above, the semiconductor position sensor may detect continuously and spatially the barycenter of a light intensity.
- the sensor As a conventional semiconductor position sensor, the sensor has been known in which a p-type resistor layer is provided on the top surface of a high-resistance Si substrate (i-type layer), on the bottom surface thereof a n-type layer is provided, and two electrodes are provided oppositely on the p-type resistor layer.
- a p-type resistor layer is provided on the top surface of a high-resistance Si substrate (i-type layer), on the bottom surface thereof a n-type layer is provided, and two electrodes are provided oppositely on the p-type resistor layer.
- a photocurrent is generated due to a photoelectric effect when an incident light impinges upon the p-type resistor layer.
- the photocurrent generated at the position upon which an incident light impinges is divided into two currents, respective magnitude thereof being in reverse proportion to respective resistances from the light impinging position to respective two electrodes, so that the light impinging position may be detected by monitoring each current derived from respective two electrodes.
- the conventional semiconductor position sensor uses a Si substrate as described above, and then has a poor sensitivity in a long-wavelength band for an optical communication. Therefore, in a case that the conventional semiconductor position sensor is used for a light-receiving element array of an optical demultiplexer, it is difficult to detect the barycenter of a light intensity of light having a long-wavelength band.
- An object of the present invention is to provide a light-receiving element used in a photodetector of an optical demultiplexer, which may detect the barycenter of a light intensity of light including a long-wavelength band.
- Another object of the present invention is to provide a photodetector of an optical demultiplexer, which uses such a light-receiving element.
- a further object of the present invention is to provide an optical demultiplexer having an increased resolution using such a photodetector.
- a semiconductor position sensor using III-V group compound semiconductor having a good sensitivity in a long-wavelength band (e.g., 1.55 ⁇ m band) for an optical communication is used as a light-receiving element in order to monitor the spectrum of the long-wavelength band.
- a first aspect of the present invention is a light-receiving element for detecting a light intensity and a barycenter thereof for an incident light of a long-wavelength, the light-receiving element comprising a semiconductor layer of III-V group compound semiconductor; a first conductivity-type of resistor layer provided on the top surface of the semiconductor layer; a second conductivity-type, opposite to the first conductivity-type, of substrate provided on the bottom surface of the semiconductor layer; and at least one pair of opposing electrodes provided on the resistor layer.
- a second aspect of the present invention is a photodetector for detecting a light intensity and a barycenter thereof for each of lights demultiplexed from an incident light, the incident light including a plurality of wavelengths, the photodetector comprising one or more light-receiving elements described above.
- a third aspect of the present invention is an optical demultiplexer for demultiplexing an incident light including multiplexed wavelengths, the optical demultiplexer comprising an optical means for demultiplexing the incident light into a plurality of lights; and a photodetector for receiving the plurality of light demultiplexed by the optical means.
- An array of light-receiving elements described above may be used for the photodetector.
- FIG. 1A is a plan view of a light-receiving element in accordance with the present invention.
- FIG. 1B is a cross-sectional view taken along the X-Y line in FIG. 1A .
- FIG. 2 is a diagram of a circuit for measuring the position upon which an incident light impinges using a current from an light-receiving element.
- FIG. 3 is a diagram of a time-division type of photodetector.
- FIG. 4 is a diagram of a photodetector for detecting a light intensity and the barycenter thereof for each of demultiplexed lights.
- FIG. 5 is a plan-view of the photodetector shown in FIG. 4 .
- FIG. 6 is a diagram of another photodetector for detecting a light intensity and the barycenter thereof for each of demultiplexed lights.
- FIG. 7 is a diagram of an optical demultiplexer in accordance with the present invention.
- FIG. 8 is a diagram illustrating the structure for detecting each barycenter of k 1 wavelengths of C-band and k 2 wavelengths of L-band.
- FIG. 9 shows an example in which two lines of light-receiving elements each line having the same number of elements are integrated in one semiconductor chip.
- FIGS. 1A and 1B there is shown a light-receiving element in accordance with the present invention, i.e. a light-receiving element 8 for monitoring one wavelength.
- FIG. 1A is a plan view
- FIG. 1B is a cross-sectional view taken along the X-Y line in FIG. 1A .
- an InGaAs layer (i-type layer) 12 and a p-type InP layer 14 are stacked on an n-type InP substrate 10 .
- Electrodes 16 a and 16 b are formed on both sides of the top surface of the p-type layer 14 , and an electrode (not shown) is formed on the bottom surface of the n-type substrate 10 .
- I a I ⁇ ( L ab ⁇ L a )/ L ab (1)
- I b I ⁇ L a /L ab (2)
- the ratio of I a to I b and the ratio of the subtraction (I a ⁇ I b ) to the summation (I a +I b ) are calculated as follows.
- I a /I b L ab /L a ⁇ 1 (3)
- ( I a ⁇ I b )/( I a +I b ) 1 ⁇ (2 L a /L ab ) (4)
- the material of InGaAs system having a high photo sensitivity for a long-wavelength is used, so that a high performance detection of the light impinging position may be possible for a long-wavelength for which the material of Si system has a poor sensitivity.
- III-V group compound semiconductor such as GaAs, AlGaAs, InAs, InGaAsP, and the like may be used.
- Ge may be used in an infrared wavelength. The summation of the currents I a and I b is equal to the photocurrent I, so that the intensity of an incident light may be monitored from the photocurrent I.
- FIG. 2 there is shown a circuit for measuring the position upon which an incident light impinges using the current I a and I b derived from the electrodes 16 a and 16 b of the light-receiving element 8 .
- the currents I a and I b are amplified by preamplifiers 1 and 2 , respectively, and the amplified currents are summed in an adder 3 to obtain (I a +I b ) as well as are substrated in a substracter 5 to obtain (I a ⁇ I b )
- the division (I a ⁇ I b )/(I a +I b ) is calculated in a divider 5 to measure the light impinging position based on the formula (4).
- the circuit shown in FIG. 2 employs a method for detecting the light impinging position based on the formula (4)
- the light impinging position may be measured by calculating the division I a /I b based on the formula (3).
- a time-division type of photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N time-divisioned wavelength by a diffraction grating.
- FIG. 3 shows a photodetector 20 for monitoring the demultiplexed N lights of wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ N . While the structure of the photodetector 20 is basically the same as that of the light-receiving element 8 shown in FIG. 1 , the light-receiving area of the photodetector is formed so large as to receive all the demultiplexed lights.
- the incident light including N time-divisioned wavelength is demultiplexed into N lights by a diffraction grating 22 .
- the demultiplexed lights including wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ N , respectively, impinge upon the photodetector 20 .
- the photodetector may operate in a time-divisional manner to detect the barycenter of a light intensity for each of N demultiplexed lights. Also, each light intensity of N demultiplexed lights may be detected from respective photocurrents as illustrated with reference to FIG. 1 .
- a photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N wavelength by a diffraction grating.
- FIG. 4 shows a photodetector 30 for monitoring the demultiplexed N lights of wavelengths ⁇ 1 , ⁇ 2 , . . . , ⁇ N .
- the photodetector 30 is structured by N light-receiving elements D 1 , D 2 , . . . , D N arrayed in one dimension. Each light-receiving element is a light-receiving element as illustrated with reference to FIG. 1 .
- FIG. 5 shows a plan-view of the photodetector 30 . Respective light-receiving elements are arrayed so that the electrodes 16 a and 16 b of respective element are lined up in an arraying direction of the elements.
- the incident light including N wavelengths is demultiplexed into N lights by a diffraction grating 22 , and the demultiplexed N lights impinge upon N light-receiving elements, respectively.
- the barycenter of a light intensity of each of N demultiplexed lights may be detected.
- each intensity of N demultiplexed lights may be detected from a photocurrent of each light-receiving element as illustrated with reference to FIG. 1 .
- photodetector detecting a light intensity and a barycenter thereof for each of N demultiplexed lights which are demultiplexed from an incident light including multiplexed N wavelength by a diffraction grating.
- FIG. 6 is a diagram for illustrating this photodetector.
- an incident light is split into two lights by a half mirror 40 .
- One split light is demultiplexed into N lights by a diffraction grating 42 , and each barycenter of the light intensities thereof is detected by a first photodetector 30 shown in FIG. 5 .
- the other split light is demultiplexed into N lights by a dittraction grating 44 , and respective light intensities of N demodulated lights are detected by a second photodetector 46 consisting of N photodiodes PD 1 , PD 2 , . . . , P DN each positioned at the focal point of demultiplexed light.
- the second photodetector 46 may be fabricated so that the light-receiving area thereof is smaller than that of the first photodiode 30 , resulting in the reduction of noise therein. As a result, the second photodetector 46 is suitable for detecting the light intensity of a weak incident light.
- FIG. 7 shows an optical demultiplexer in an optical communication system based on a wavelength multiplexed transmission, which may be used for demultiplexing a wavelength multiplexed incident light into a plurality of lights each having a different wavelength, and for detecting each light intensity and barycenter thereof for respective demultiplexed lights.
- the optical demultiplexer comprises components such as one input optical fiber 50 , a collimator lens 52 , a diffraction grating 54 , and an optical detector 56 , which are accommodated in three tubular members fitted to each other.
- the input optical fiber 50 is fixedly coupled to a window 60 for fixing the fiber by means of a fiber coupling member 62 , the window 60 being an end face of a transparent tube 58 for accommodating the fiber.
- the collimator lens 52 is fixed to an end of an intermediate tube 64 .
- the diffraction grating 54 is fixed to a window 68 , the window 68 being an end face of a tube 66 for accommodating the diffraction grating.
- the tubes 58 and 66 are fitted to both ends of the intermediate tube 64 so as to be movable in the direction of light axis and rotatable around the light axis for active alignment.
- the light from the input optical fiber 50 impinges upon the diffraction grating 54 via the collimator lens 52 .
- the light is demultiplexed by the diffraction grating 54 , and the demultiplexed lights pass through the collimator lens 52 to be detected by the photodetector 56 .
- the photodetector 56 may detect each light intensity and a barycenter thereof for respective demultiplexed lights, as explained in the embodiments 2 and 3.
- the structure may be employed in which a wavelength multiplexed light is split into two lights to detect the barycenter of a light intensity by the first photodetector 30 and a light intensity by the second photodetector 46 .
- FIG. 8 shows the case that, in an optical communication system, an incident light includes k 1 wavelengths (k 1 is an integer equal to or larger than 1) of C-band and k 2 wavelengths (k 2 is an integer equal to or larger than 1) of L-band, the k 1 and k 2 wavelengths being multiplexed.
- the incident light is demultiplexed into k 1 lights of C-band and k 2 lights of L-band by a diffraction grating 70 , respectively.
- Respective barycenters of the light intensities of (k 1 +k 2 ) demultiplexed lights may be detected by a first photodetector (not shown) consisting of k 1 light-receiving elements for C-band and a second photodetector (not shown) consisting of k 2 light-receiving elements for L-band.
- the first and second photodetectors are integrated in one chip. If the incident angles of lights of C and L-bands to the diffraction grating 70 are preferably selected, then the demultiplexed lights of C and L-bands may be collected on two adjacent lines. The first and second photodetectors are arrayed in two lines on the positions upon which the demultiplexed lights impinge. Herein, the incident light of C-band impinges upon the diffraction grating at a smaller angle to the normal of the diffraction grating in comparison with the incident light of L-band.
- the arrangement of light-receiving element in one semiconductor chip is not limited to a line of k 1 elements of C-band and a line of k 2 elements of L-band, but two lines of elements each line having the same number of elements may be arranged.
- two lines of elements each line having k 1 element i.e., k 1 elements ⁇ 2 lines
- two lines of elements each line having k 2 element i.e., k 2 elements ⁇ 2 lines
- FIG. 9 shows an example in which two lines of light-receiving elements 8 each line having the same number of elements are integrated in one semiconductor chip 72 .
- the incident light including two bands i.e. C-band and L-band
- C-band and L-band has been explained hereinbefore.
- k lines of light-receiving elements may be arranged in two dimensions to detect the demultiplexed lights.
- the photodetector having described-above structure may be used for the light demultiplexer shown in FIG. 7 .
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
- Spectrometry And Color Measurement (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on both sides of the top surface of the p-type layer, and an electrode is formed on the bottom surface of the n-type substrate. An incident light impinged upon the light-receiving element is photoelectricly-converged into a photocurrent, and the photocurrent flows in the p-type layer to the electrodes. As a result, a current is derived from each of the electrodes, the magnitude thereof being dependent on the distances from the light impinging position to respective electrodes. The barycenter of a light intensity may be calculated from the currents derived from the electrodes and a light intensity may be obtained from the summation of the currents.
Description
This application is a divisional of U.S. patent application Ser. No. 10/088,275, filed Mar. 14, 2002 now abandoned.
The present invention relates to a light-receiving element for continuously detecting a light intensity and a barycenter thereof for the spectrum of a long-wavelength band (e.g., 1.3-1.55,μm band) used in an optical communication 10 field, a photodetector employing such a light-receiving element, and an optical demultiplexer using such a photodetector.
An optical demultiplexer (for example, Light Detecting System PSS-100 commercially available by Shimazu Seisakusho) has been known in which the light collected by a collective lens is reflected by a mirror, the reflected light is demultiplexed by a diffraction grating, and the demultiplexed 20 lights are detected by a photodetector. The photodetector employed in this″′ optical demultiplexer is a light-receiving element array and is used as a spectrum monitor for wavelength.
In this conventional photodetector, the barycenter of a 25 light intensity is monitored by dividing the spectrum of one wavelength by means of an array of light-receiving elements (e.g., five elements). Therefore, the resolution of the photodetector is determined by an array pitch of the light-receiving elements. In this manner, the conventional 30 photodetector may merely obtain the resolution corresponding to the array pitch of the light-receiving elements, so that it is difficult for the conventional photodetector to further increase its resolution. It should be noted that the barycenter of a light intensity means herein the barycenter of spectrum distribution of a wavelength.
In order to resolve the problems described above, the inventors of this application have thought that a semiconductor position sensor for detecting the position of a light spot is used as a light-receiving element array of the photodetector in the optical demultiplexer. Because the semiconductor position sensor is a non-divided type of element different from the light-receiving element array described above, the semiconductor position sensor may detect continuously and spatially the barycenter of a light intensity.
As a conventional semiconductor position sensor, the sensor has been known in which a p-type resistor layer is provided on the top surface of a high-resistance Si substrate (i-type layer), on the bottom surface thereof a n-type layer is provided, and two electrodes are provided oppositely on the p-type resistor layer.
Because surface layers form a p-n junction in this semiconductor position sensor, a photocurrent is generated due to a photoelectric effect when an incident light impinges upon the p-type resistor layer. The photocurrent generated at the position upon which an incident light impinges is divided into two currents, respective magnitude thereof being in reverse proportion to respective resistances from the light impinging position to respective two electrodes, so that the light impinging position may be detected by monitoring each current derived from respective two electrodes.
The conventional semiconductor position sensor uses a Si substrate as described above, and then has a poor sensitivity in a long-wavelength band for an optical communication. Therefore, in a case that the conventional semiconductor position sensor is used for a light-receiving element array of an optical demultiplexer, it is difficult to detect the barycenter of a light intensity of light having a long-wavelength band.
An object of the present invention is to provide a light-receiving element used in a photodetector of an optical demultiplexer, which may detect the barycenter of a light intensity of light including a long-wavelength band.
Another object of the present invention is to provide a photodetector of an optical demultiplexer, which uses such a light-receiving element.
A further object of the present invention is to provide an optical demultiplexer having an increased resolution using such a photodetector.
According to the present invention, a semiconductor position sensor using III-V group compound semiconductor having a good sensitivity in a long-wavelength band (e.g., 1.55 μm band) for an optical communication is used as a light-receiving element in order to monitor the spectrum of the long-wavelength band.
A first aspect of the present invention is a light-receiving element for detecting a light intensity and a barycenter thereof for an incident light of a long-wavelength, the light-receiving element comprising a semiconductor layer of III-V group compound semiconductor; a first conductivity-type of resistor layer provided on the top surface of the semiconductor layer; a second conductivity-type, opposite to the first conductivity-type, of substrate provided on the bottom surface of the semiconductor layer; and at least one pair of opposing electrodes provided on the resistor layer.
A second aspect of the present invention is a photodetector for detecting a light intensity and a barycenter thereof for each of lights demultiplexed from an incident light, the incident light including a plurality of wavelengths, the photodetector comprising one or more light-receiving elements described above.
A third aspect of the present invention is an optical demultiplexer for demultiplexing an incident light including multiplexed wavelengths, the optical demultiplexer comprising an optical means for demultiplexing the incident light into a plurality of lights; and a photodetector for receiving the plurality of light demultiplexed by the optical means. An array of light-receiving elements described above may be used for the photodetector.
Referring to FIGS. 1A and 1B , there is shown a light-receiving element in accordance with the present invention, i.e. a light-receiving element 8 for monitoring one wavelength. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along the X-Y line in FIG. 1A . In the light-receiving element 8, an InGaAs layer (i-type layer) 12 and a p-type InP layer 14 are stacked on an n-type InP substrate 10. Electrodes 16 a and 16 b are formed on both sides of the top surface of the p-type layer 14, and an electrode (not shown) is formed on the bottom surface of the n-type substrate 10.
The basic operation of the light-receiving elements 8 will now described. An incident light impinged upon the light-receiving element is photoelectric-converged into a photocurrent which flows in the p-type layer 14 toward the electrodes 16 a and 16 b. As a result, a current is derived from each of the electrodes 16 a and 16 b, the magnitude thereof being dependent on the distances from the light impinging position to respective electrodes 16 a and 16 b. That is, the photocurrent I is divided into two currents in reverse proportion to respective resistances from the light impinging position to respective electrodes 16 a and 16 b. It is assumed herein that the distance between the electrodes 16 a and 16 b is Lab, and the distance between the light impinging position and the electrode 16 a is La.
If the sheet resistance of the p-type layer 14 is uniform, then the currents Ia and Ib derived from the electrodes 16 a and 16 b are represented by the following formulas.
I a =I×(L ab −L a)/L ab (1)
I b =I×L a /L ab (2)
The ratio of Ia to Ib and the ratio of the subtraction (Ia−Ib) to the summation (Ia+Ib) are calculated as follows.
I a /I b =L ab /L a−1 (3)
(I a −I b)/(I a +I b) =1−(2L a /L ab) (4)
I a =I×(L ab −L a)/L ab (1)
I b =I×L a /L ab (2)
The ratio of Ia to Ib and the ratio of the subtraction (Ia−Ib) to the summation (Ia+Ib) are calculated as follows.
I a /I b =L ab /L a−1 (3)
(I a −I b)/(I a +I b) =1−(2L a /L ab) (4)
It is appreciated that respective ratios of Ia/Ib and (Ia−Ib)/(Ia+Ib) are the values irrelevant to a light intensity and a variation thereof. Therefore, if respective ratios of Ia/Ib and (Ia−Ib)/(Ia+Ib) in the formulas (3) and (4) are measured, then the distance La may be obtained. As a result, the light impinging position may be precisely detected irrelevantly to the variation of a light intensity.
In the light-receiving element of the present embodiment, the material of InGaAs system having a high photo sensitivity for a long-wavelength is used, so that a high performance detection of the light impinging position may be possible for a long-wavelength for which the material of Si system has a poor sensitivity. As the material of InGaAs system, III-V group compound semiconductor such as GaAs, AlGaAs, InAs, InGaAsP, and the like may be used. Also, Ge may be used in an infrared wavelength. The summation of the currents Ia and Ib is equal to the photocurrent I, so that the intensity of an incident light may be monitored from the photocurrent I.
Referring to FIG. 2 , there is shown a circuit for measuring the position upon which an incident light impinges using the current Ia and Ib derived from the electrodes 16 a and 16 b of the light-receiving element 8. The currents Ia and Ib are amplified by preamplifiers 1 and 2, respectively, and the amplified currents are summed in an adder 3 to obtain (Ia+Ib) as well as are substrated in a substracter 5 to obtain (Ia−Ib) Then, the division (Ia−Ib)/(Ia+Ib) is calculated in a divider 5 to measure the light impinging position based on the formula (4).
While the circuit shown in FIG. 2 employs a method for detecting the light impinging position based on the formula (4), the light impinging position may be measured by calculating the division Ia/Ib based on the formula (3).
A time-division type of photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N time-divisioned wavelength by a diffraction grating.
When each of the demultiplexed lights impinges upon the photodetector 20, the photodetector may operate in a time-divisional manner to detect the barycenter of a light intensity for each of N demultiplexed lights. Also, each light intensity of N demultiplexed lights may be detected from respective photocurrents as illustrated with reference to FIG. 1 .
A photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N lights which are demultiplexed from an incident light including multiplexed N wavelength by a diffraction grating.
In the present embodiment, the incident light including N wavelengths is demultiplexed into N lights by a diffraction grating 22, and the demultiplexed N lights impinge upon N light-receiving elements, respectively. As a result, the barycenter of a light intensity of each of N demultiplexed lights may be detected. Also, each intensity of N demultiplexed lights may be detected from a photocurrent of each light-receiving element as illustrated with reference to FIG. 1 .
Another example of a photodetector in accordance with the present invention will now be described, the photodetector detecting a light intensity and a barycenter thereof for each of N demultiplexed lights which are demultiplexed from an incident light including multiplexed N wavelength by a diffraction grating.
In this embodiment, the second photodetector 46 may be fabricated so that the light-receiving area thereof is smaller than that of the first photodiode 30, resulting in the reduction of noise therein. As a result, the second photodetector 46 is suitable for detecting the light intensity of a weak incident light.
An optical demultiplexer in accordance with the present invention will now be described, the optical demultiplexer using the photodetector in the second or third embodiment. FIG. 7 shows an optical demultiplexer in an optical communication system based on a wavelength multiplexed transmission, which may be used for demultiplexing a wavelength multiplexed incident light into a plurality of lights each having a different wavelength, and for detecting each light intensity and barycenter thereof for respective demultiplexed lights. The optical demultiplexer comprises components such as one input optical fiber 50, a collimator lens 52, a diffraction grating 54, and an optical detector 56, which are accommodated in three tubular members fitted to each other. The input optical fiber 50 is fixedly coupled to a window 60 for fixing the fiber by means of a fiber coupling member 62, the window 60 being an end face of a transparent tube 58 for accommodating the fiber. The collimator lens 52 is fixed to an end of an intermediate tube 64. The diffraction grating 54 is fixed to a window 68, the window 68 being an end face of a tube 66 for accommodating the diffraction grating. In this optical demultiplexer, the tubes 58 and 66 are fitted to both ends of the intermediate tube 64 so as to be movable in the direction of light axis and rotatable around the light axis for active alignment.
According to this optical demultiplexer, the light from the input optical fiber 50 impinges upon the diffraction grating 54 via the collimator lens 52. The light is demultiplexed by the diffraction grating 54, and the demultiplexed lights pass through the collimator lens 52 to be detected by the photodetector 56.
The photodetector 56 may detect each light intensity and a barycenter thereof for respective demultiplexed lights, as explained in the embodiments 2 and 3.
As in the photodetector illustrated in the embodiment 4, the structure may be employed in which a wavelength multiplexed light is split into two lights to detect the barycenter of a light intensity by the first photodetector 30 and a light intensity by the second photodetector 46.
When the first photodetector for C-band and the second photodetector for L-band are formed on separate semiconductor chips, respectively, it is difficult that the relative position and the parallelism between semiconductor chips are implemented with high accuracy. Therefore, it is preferable that the first and second photodetectors are integrated in one chip. If the incident angles of lights of C and L-bands to the diffraction grating 70 are preferably selected, then the demultiplexed lights of C and L-bands may be collected on two adjacent lines. The first and second photodetectors are arrayed in two lines on the positions upon which the demultiplexed lights impinge. Herein, the incident light of C-band impinges upon the diffraction grating at a smaller angle to the normal of the diffraction grating in comparison with the incident light of L-band.
The arrangement of light-receiving element in one semiconductor chip is not limited to a line of k1 elements of C-band and a line of k2 elements of L-band, but two lines of elements each line having the same number of elements may be arranged. For example, two lines of elements each line having k1 element (i.e., k1 elements×2 lines) in the case of k1≧k2 may be provided in one semiconductor chip, or two lines of elements each line having k2 element (i.e., k2 elements×2 lines) in the case of k1≦k2 may be provided in one semiconductor chip. FIG. 9 shows an example in which two lines of light-receiving elements 8 each line having the same number of elements are integrated in one semiconductor chip 72.
The incident light including two bands, i.e. C-band and L-band, has been explained hereinbefore. Generally, for the incident light including k bands, k lines of light-receiving elements may be arranged in two dimensions to detect the demultiplexed lights.
The photodetector having described-above structure may be used for the light demultiplexer shown in FIG. 7 .
Claims (3)
1. An optical demultiplexer for demultiplexing an incident light including multiplexed wavelengths, comprising:
an optical means for demultiplexing the incident light into a plurality of lights, the incident light including N (N is an integer equal to or larger than 2) time-divisioned wavelengths; and
a photodetector for receiving the plurality of lights demultiplexed by the optical means, and detecting a light intensity and a barycenter thereof for each of lights demultiplexed from the incident light, the photodetector including N light-receiving elements arrayed in one dimension,
wherein each light-receiving element includes:
a semiconductor layer of Ill-V group compound semiconductor, a first conductivity-type of resistor layer provided on a top surface of the semiconductor layer, a second conductivity-type, opposite to the first conductivity-type of substrate provided beneath a bottom surface of the semiconductor layer, the resistor layer and the substrate each being III-V semiconductor layers, and
first and second electrodes provided on the resistor layer separated by a region of the resistor layer, wherein light incident on the region from one of the corresponding plurality of lights generates a first signal to the first electrode and a second signal to the second electrode, the first and second signals indicating a position of the light incident on the resistor layer within the region relative to the first and second electrodes, the incident light being incident on the resistor layer without first passing through any conductive layer.
2. An optical demultiplexer for demultiplexing an incident light including multiplexed wavelengths, comprising:
an optical means for splitting the incident light into two lights;
a first optical means for demultiplexing one of the two lights;
a second optical means for demultiplexing the other of the two lights;
a photodetector for receiving the lights demultiplexed by the first optical means for detecting a barycenter of a light intensity for each of the demultiplexed lights; and
a light-receiving element array for receiving the lights demultiplexed by the second optical means for detecting a light-intensity for each of the demultiplexed lights,
wherein the photodetector includes N light-receiving elements arrayed in one dimension,
wherein each light-receiving element includes:
a semiconductor layer of III-V group compound semiconductor, a first conductivity-type of resistor layer provided on a top surface of the semiconductor layer, a second conductivity-type, opposite to the first conductivity-type of substrate provided beneath a bottom surace of the semiconductor layer, and
first and second electrodes provided on the resistor layer separated by a region of the resistor layer, wherein light incident on the region from one of the corresponding plurality of lights generates a first signal to the first electrode and a second signal to the second electrode, the first and second signals indicating a position of the light incident on the resistor layer within the region relative to the first and second electrodes.
3. The optical demultiplexer of claim 2 , wherein the light-receiving element array is a photodiode array.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/959,960 US7372124B2 (en) | 2000-07-18 | 2004-10-06 | Light-receiving element and photodetector using the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000216894A JP2002033507A (en) | 2000-07-18 | 2000-07-18 | Photodetector and optical demultiplexer |
JP2000-216894 | 2000-07-18 | ||
US10/088,275 US20020149014A1 (en) | 2000-07-18 | 2001-07-10 | Light-receiving device and photodetector comprising light-receiving device |
US10/959,960 US7372124B2 (en) | 2000-07-18 | 2004-10-06 | Light-receiving element and photodetector using the same |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/005963 Division WO2002007227A1 (en) | 2000-07-18 | 2001-07-10 | Light-receiving device and photodetector comprising light-receiving device |
US10/088,275 Division US20020149014A1 (en) | 2000-07-18 | 2001-07-10 | Light-receiving device and photodetector comprising light-receiving device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050058454A1 US20050058454A1 (en) | 2005-03-17 |
US7372124B2 true US7372124B2 (en) | 2008-05-13 |
Family
ID=18712082
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/088,275 Abandoned US20020149014A1 (en) | 2000-07-18 | 2001-07-10 | Light-receiving device and photodetector comprising light-receiving device |
US10/959,960 Expired - Fee Related US7372124B2 (en) | 2000-07-18 | 2004-10-06 | Light-receiving element and photodetector using the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/088,275 Abandoned US20020149014A1 (en) | 2000-07-18 | 2001-07-10 | Light-receiving device and photodetector comprising light-receiving device |
Country Status (8)
Country | Link |
---|---|
US (2) | US20020149014A1 (en) |
EP (1) | EP1233459A1 (en) |
JP (1) | JP2002033507A (en) |
KR (1) | KR20020037050A (en) |
CN (1) | CN1383581A (en) |
CA (1) | CA2385084A1 (en) |
TW (1) | TW503587B (en) |
WO (1) | WO2002007227A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11658742B2 (en) * | 2018-02-22 | 2023-05-23 | 8 Rivers Capital, Llc | System for multi-channel, diverged-beam optical wireless communication |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201102478D0 (en) | 2011-02-11 | 2011-03-30 | Isdi Ltd | Radiation detector and method |
GB201302543D0 (en) * | 2013-02-13 | 2013-03-27 | Isdi Ltd | Detector and method |
GB2525625B (en) | 2014-04-29 | 2017-05-31 | Isdi Ltd | Device and method |
TWI550836B (en) * | 2014-05-06 | 2016-09-21 | 友達光電股份有限公司 | Photo detector and fabricating method thereof |
EP3665793A4 (en) | 2017-08-11 | 2021-05-12 | Optipulse Inc. | Laser grid structures for wireless high speed data transfers |
US10374705B2 (en) | 2017-09-06 | 2019-08-06 | Optipulse Inc. | Method and apparatus for alignment of a line-of-sight communications link |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54113384A (en) | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Multi-wave spectroscopic photometer |
JPS61120906A (en) | 1984-11-19 | 1986-06-09 | Canon Inc | Position detecting element |
JPS6373121A (en) | 1986-09-17 | 1988-04-02 | Fujitsu Ltd | Spectroscopic device |
JPS63153407A (en) | 1986-12-18 | 1988-06-25 | Mitsutoyo Corp | Semiconductor position detector |
US4916305A (en) * | 1987-11-03 | 1990-04-10 | Stc Plc | Optical detectors with selective bias voltage application |
US4996163A (en) * | 1988-02-29 | 1991-02-26 | Sumitomo Electric Industries, Ltd. | Method for producing an opto-electronic integrated circuit |
JPH03146833A (en) | 1989-11-01 | 1991-06-21 | Hitachi Ltd | Multi-wavelength spectroscope |
US5144397A (en) * | 1989-03-03 | 1992-09-01 | Mitsubishi Denki Kabushiki Kaisha | Light responsive semiconductor device |
US5179423A (en) | 1991-07-26 | 1993-01-12 | Kollmorgen Corporation | Gain stabilized self-scanning photo-diode array |
US5214527A (en) * | 1990-09-26 | 1993-05-25 | Bell Communications Research, Inc. | Electronically switched multiple-channel optical receiver |
US5528071A (en) * | 1990-01-18 | 1996-06-18 | Russell; Jimmie L. | P-I-N photodiode with transparent conductor n+layer |
EP0762170A1 (en) | 1995-08-22 | 1997-03-12 | Sumitomo Electric Industries, Inc. | Optical-axis alignment method, optical-axis alignment device, inspection method of optical devices, inspection device of optical devices, method of producing optical module, and apparatus of producing optical module |
US5680411A (en) * | 1993-06-02 | 1997-10-21 | France Telecom Etablissement Autonome De Droit Public | Integrated monolithic laser-modulator component with multiple quantum well structure |
US6016212A (en) * | 1997-04-30 | 2000-01-18 | At&T Corp | Optical receiver and demultiplexer for free-space wavelength division multiplexing communications systems |
US6239891B1 (en) | 1998-03-11 | 2001-05-29 | Nippon Sheet Glass Ltd., Co | Optical demultiplexer and method of assembling same |
US6334014B1 (en) | 1998-11-02 | 2001-12-25 | Canon Kabushiki Kaisha | Optical fiber apparatus provided with demultiplexing/multiplexing unit on fiber's end portion, optical detecting apparatus provided with demultiplexing/multiplexing unit on its light receiving surface, and optical transmission system using the same |
-
2000
- 2000-07-18 JP JP2000216894A patent/JP2002033507A/en not_active Withdrawn
-
2001
- 2001-07-10 WO PCT/JP2001/005963 patent/WO2002007227A1/en not_active Application Discontinuation
- 2001-07-10 US US10/088,275 patent/US20020149014A1/en not_active Abandoned
- 2001-07-10 CA CA002385084A patent/CA2385084A1/en not_active Abandoned
- 2001-07-10 EP EP01947946A patent/EP1233459A1/en not_active Withdrawn
- 2001-07-10 KR KR1020027003462A patent/KR20020037050A/en not_active Application Discontinuation
- 2001-07-10 CN CN01801906A patent/CN1383581A/en active Pending
- 2001-07-17 TW TW090117418A patent/TW503587B/en active
-
2004
- 2004-10-06 US US10/959,960 patent/US7372124B2/en not_active Expired - Fee Related
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54113384A (en) | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Multi-wave spectroscopic photometer |
JPS61120906A (en) | 1984-11-19 | 1986-06-09 | Canon Inc | Position detecting element |
JPS6373121A (en) | 1986-09-17 | 1988-04-02 | Fujitsu Ltd | Spectroscopic device |
JPS63153407A (en) | 1986-12-18 | 1988-06-25 | Mitsutoyo Corp | Semiconductor position detector |
US4916305A (en) * | 1987-11-03 | 1990-04-10 | Stc Plc | Optical detectors with selective bias voltage application |
US4996163A (en) * | 1988-02-29 | 1991-02-26 | Sumitomo Electric Industries, Ltd. | Method for producing an opto-electronic integrated circuit |
US5144397A (en) * | 1989-03-03 | 1992-09-01 | Mitsubishi Denki Kabushiki Kaisha | Light responsive semiconductor device |
JPH03146833A (en) | 1989-11-01 | 1991-06-21 | Hitachi Ltd | Multi-wavelength spectroscope |
US5528071A (en) * | 1990-01-18 | 1996-06-18 | Russell; Jimmie L. | P-I-N photodiode with transparent conductor n+layer |
US5214527A (en) * | 1990-09-26 | 1993-05-25 | Bell Communications Research, Inc. | Electronically switched multiple-channel optical receiver |
US5179423A (en) | 1991-07-26 | 1993-01-12 | Kollmorgen Corporation | Gain stabilized self-scanning photo-diode array |
US5680411A (en) * | 1993-06-02 | 1997-10-21 | France Telecom Etablissement Autonome De Droit Public | Integrated monolithic laser-modulator component with multiple quantum well structure |
EP0762170A1 (en) | 1995-08-22 | 1997-03-12 | Sumitomo Electric Industries, Inc. | Optical-axis alignment method, optical-axis alignment device, inspection method of optical devices, inspection device of optical devices, method of producing optical module, and apparatus of producing optical module |
US6016212A (en) * | 1997-04-30 | 2000-01-18 | At&T Corp | Optical receiver and demultiplexer for free-space wavelength division multiplexing communications systems |
US6239891B1 (en) | 1998-03-11 | 2001-05-29 | Nippon Sheet Glass Ltd., Co | Optical demultiplexer and method of assembling same |
US6334014B1 (en) | 1998-11-02 | 2001-12-25 | Canon Kabushiki Kaisha | Optical fiber apparatus provided with demultiplexing/multiplexing unit on fiber's end portion, optical detecting apparatus provided with demultiplexing/multiplexing unit on its light receiving surface, and optical transmission system using the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11658742B2 (en) * | 2018-02-22 | 2023-05-23 | 8 Rivers Capital, Llc | System for multi-channel, diverged-beam optical wireless communication |
Also Published As
Publication number | Publication date |
---|---|
WO2002007227A1 (en) | 2002-01-24 |
US20020149014A1 (en) | 2002-10-17 |
JP2002033507A (en) | 2002-01-31 |
CA2385084A1 (en) | 2002-01-24 |
CN1383581A (en) | 2002-12-04 |
TW503587B (en) | 2002-09-21 |
KR20020037050A (en) | 2002-05-17 |
US20050058454A1 (en) | 2005-03-17 |
EP1233459A1 (en) | 2002-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5760419A (en) | Monolithic wavelength meter and photodetector using a wavelength dependent reflector | |
US20070076481A1 (en) | Multimode focal plane array with electrically isolated commons for independent sub-array biasing | |
US20060124832A1 (en) | Wide dynamic range photodetector | |
US6580089B2 (en) | Multi-quantum-well infrared sensor array in spatially-separated multi-band configuration | |
US7129489B2 (en) | Method and apparatus providing single bump, multi-color pixel architecture | |
US20060231913A1 (en) | Method for determining wavelengths of light incident on a stacked photodetector structure | |
US7372124B2 (en) | Light-receiving element and photodetector using the same | |
US20080067620A1 (en) | Avalanche photodiode | |
JPH0814509B2 (en) | Spectroscopic measurement sensor | |
US20100231924A1 (en) | Integrated monolithic interference detection device | |
JP2004303878A (en) | Photodetector array | |
JP2931122B2 (en) | One-dimensional light position detector | |
US7062178B1 (en) | Photodetector array and optical branching filter using the array | |
US6369436B1 (en) | Semiconductor wavelength demultiplexer | |
JP3683445B2 (en) | Optical demultiplexer | |
JPH03202732A (en) | Color sensor | |
US7309854B2 (en) | Photo-detectors and optical devices incorporating same | |
JPH04303972A (en) | Light-receiving element | |
JP2700262B2 (en) | Light detection method | |
JP3982138B2 (en) | Photodiode array element | |
WO2004017428A1 (en) | Wavelength-demultiplexer with integrated monolithic photodiodes | |
JPH05251673A (en) | Photodetector | |
JPH0238824A (en) | Photodetector apparatus | |
Andrievski et al. | High speed InGaAs photodetector modules for fibre optic communications | |
GB2108760A (en) | Semiconductor photodetector having tailored spectral sensitivity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: NIPPON SHEET GLASS COMPANY, LIMITED, JAPAN Free format text: CHANGE OF NAME;ASSIGNOR:NIPPON SHEET GLASS CO., LTD.;REEL/FRAME:020736/0719 Effective date: 20070221 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20120513 |