US20020000589A1 - Semiconductor device with capacitor elements substantially free of titanium - Google Patents
Semiconductor device with capacitor elements substantially free of titanium Download PDFInfo
- Publication number
- US20020000589A1 US20020000589A1 US09/190,906 US19090698A US2002000589A1 US 20020000589 A1 US20020000589 A1 US 20020000589A1 US 19090698 A US19090698 A US 19090698A US 2002000589 A1 US2002000589 A1 US 2002000589A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor device
- insulating film
- silicide
- layer
- capacitor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000003990 capacitor Substances 0.000 title claims abstract description 57
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 239000010936 titanium Substances 0.000 title claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 21
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- -1 tungsten nitride Chemical class 0.000 claims description 6
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 5
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 3
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 claims description 3
- VKTGMGGBYBQLGR-UHFFFAOYSA-N [Si].[V].[V].[V] Chemical compound [Si].[V].[V].[V] VKTGMGGBYBQLGR-UHFFFAOYSA-N 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021357 chromium silicide Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 3
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 229910021355 zirconium silicide Inorganic materials 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 30
- 229910052697 platinum Inorganic materials 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Definitions
- FIG. 3 is a graph showing the data retaining period of the conventional semiconductor device 1000 and that of the semiconductor device 100 according to the example of the present invention. As is apparent from FIG. 3, the present invention improves the data retaining period of the semiconductor device from about 1 year to about 10 years (about 10-fold improvement).
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/177,781 US6573111B2 (en) | 1997-11-13 | 2002-06-20 | Method of making a semiconductor device with capacitor element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31174597A JP3165093B2 (ja) | 1997-11-13 | 1997-11-13 | 半導体装置およびその製造方法 |
| JP9-311745 | 1997-11-13 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/177,781 Division US6573111B2 (en) | 1997-11-13 | 2002-06-20 | Method of making a semiconductor device with capacitor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20020000589A1 true US20020000589A1 (en) | 2002-01-03 |
Family
ID=18020976
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/190,906 Abandoned US20020000589A1 (en) | 1997-11-13 | 1998-11-12 | Semiconductor device with capacitor elements substantially free of titanium |
| US10/177,781 Expired - Fee Related US6573111B2 (en) | 1997-11-13 | 2002-06-20 | Method of making a semiconductor device with capacitor element |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/177,781 Expired - Fee Related US6573111B2 (en) | 1997-11-13 | 2002-06-20 | Method of making a semiconductor device with capacitor element |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20020000589A1 (de) |
| EP (1) | EP0917204B1 (de) |
| JP (1) | JP3165093B2 (de) |
| KR (1) | KR100392155B1 (de) |
| CN (1) | CN1187829C (de) |
| DE (1) | DE69836947T2 (de) |
| TW (1) | TW434883B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090298203A1 (en) * | 2007-03-20 | 2009-12-03 | Fujitsu Microelectronics Limited | Manufacturing method of semiconductor device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174735B1 (en) * | 1998-10-23 | 2001-01-16 | Ramtron International Corporation | Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation |
| JP2001135798A (ja) | 1999-11-10 | 2001-05-18 | Nec Corp | 強誘電体メモリおよび強誘電体メモリ製造方法 |
| JP3907921B2 (ja) * | 2000-06-19 | 2007-04-18 | 富士通株式会社 | 半導体装置の製造方法 |
| CN100390999C (zh) | 2003-09-05 | 2008-05-28 | 富士通株式会社 | 半导体装置及其制造方法 |
| JP2005116756A (ja) | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US20050212022A1 (en) * | 2004-03-24 | 2005-09-29 | Greer Edward C | Memory cell having an electric field programmable storage element, and method of operating same |
| US7115522B2 (en) * | 2004-07-09 | 2006-10-03 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
| JP4935192B2 (ja) * | 2006-05-31 | 2012-05-23 | 三菱電機株式会社 | 半導体装置 |
| US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
| US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
| US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
| KR101711191B1 (ko) * | 2010-10-28 | 2017-03-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175763A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体装置 |
| US5027185A (en) | 1988-06-06 | 1991-06-25 | Industrial Technology Research Institute | Polycide gate FET with salicide |
| EP0415751B1 (de) | 1989-08-30 | 1995-03-15 | Nec Corporation | Dünnfilmkondensator und dessen Herstellungsverfahren |
| WO1992006498A1 (en) * | 1990-09-28 | 1992-04-16 | Seiko Epson Corporation | Semiconductor device |
| KR950005259B1 (ko) * | 1991-11-27 | 1995-05-22 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
| KR950012123B1 (ko) | 1993-08-11 | 1995-10-14 | 대우전자주식회사 | 로울러식 저면 흡입구를 갖는 진공청소기 |
| JP3045928B2 (ja) * | 1994-06-28 | 2000-05-29 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
| US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
| US5566045A (en) | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
| JPH08148561A (ja) | 1994-11-16 | 1996-06-07 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
| KR960026249A (ko) * | 1994-12-12 | 1996-07-22 | 윌리엄 이. 힐러 | 고압, 저온 반도체 갭 충진 프로세스 |
| CN1075243C (zh) * | 1994-12-28 | 2001-11-21 | 松下电器产业株式会社 | 集成电路用电容元件及其制造方法 |
| US5648673A (en) | 1994-12-28 | 1997-07-15 | Nippon Steel Corporation | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
| US5625233A (en) * | 1995-01-13 | 1997-04-29 | Ibm Corporation | Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide |
| US5976769A (en) * | 1995-07-14 | 1999-11-02 | Texas Instruments Incorporated | Intermediate layer lithography |
-
1997
- 1997-11-13 JP JP31174597A patent/JP3165093B2/ja not_active Expired - Fee Related
-
1998
- 1998-11-11 TW TW087118791A patent/TW434883B/zh not_active IP Right Cessation
- 1998-11-11 EP EP98121156A patent/EP0917204B1/de not_active Expired - Lifetime
- 1998-11-11 DE DE69836947T patent/DE69836947T2/de not_active Expired - Lifetime
- 1998-11-12 US US09/190,906 patent/US20020000589A1/en not_active Abandoned
- 1998-11-13 CN CNB981249086A patent/CN1187829C/zh not_active Expired - Fee Related
- 1998-11-13 KR KR10-1998-0048522A patent/KR100392155B1/ko not_active IP Right Cessation
-
2002
- 2002-06-20 US US10/177,781 patent/US6573111B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090298203A1 (en) * | 2007-03-20 | 2009-12-03 | Fujitsu Microelectronics Limited | Manufacturing method of semiconductor device |
| US8658493B2 (en) | 2007-03-20 | 2014-02-25 | Fujitsu Semiconductor Limited | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69836947D1 (de) | 2007-03-15 |
| JP3165093B2 (ja) | 2001-05-14 |
| JPH11145422A (ja) | 1999-05-28 |
| KR19990045257A (ko) | 1999-06-25 |
| EP0917204B1 (de) | 2007-01-24 |
| CN1223470A (zh) | 1999-07-21 |
| EP0917204A1 (de) | 1999-05-19 |
| US20020155663A1 (en) | 2002-10-24 |
| US6573111B2 (en) | 2003-06-03 |
| KR100392155B1 (ko) | 2003-11-19 |
| CN1187829C (zh) | 2005-02-02 |
| DE69836947T2 (de) | 2007-05-24 |
| TW434883B (en) | 2001-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: MATSUSHITA ELECTRONICS CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAGANO, YOSHIHISA;UEMOTO, YASUHIRO;JUDAI, YUJI;AND OTHERS;REEL/FRAME:009587/0790 Effective date: 19981030 |
|
| AS | Assignment |
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., JAPAN Free format text: MERGER;ASSIGNOR:MATSUSHITA ELECTRIC COMPANY, LTD.;REEL/FRAME:011911/0364 Effective date: 20010404 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |