US11556114B2 - Drawing apparatus and drawing method - Google Patents

Drawing apparatus and drawing method Download PDF

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Publication number
US11556114B2
US11556114B2 US16/788,359 US202016788359A US11556114B2 US 11556114 B2 US11556114 B2 US 11556114B2 US 202016788359 A US202016788359 A US 202016788359A US 11556114 B2 US11556114 B2 US 11556114B2
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processing target
drawing process
grounding
arithmetic processor
acceleration
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US20200264588A1 (en
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Hikaru YAMAMURA
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Nuflare Technology Inc
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Nuflare Technology Inc
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Programme-control systems
    • G05B19/02Programme-control systems electric
    • G05B19/418Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/4184Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by fault tolerance, reliability of production system
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/16Measuring impedance of element or network through which a current is passing from another source, e.g. cable, power line
    • G01R27/18Measuring resistance to earth, i.e. line to ground
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/026Means for avoiding or neutralising unwanted electrical charges on tube components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/20Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
    • G01R27/205Measuring contact resistance of connections, e.g. of earth connections
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00Program-control systems
    • G05B2219/30Nc systems
    • G05B2219/34Director, elements to supervisory
    • G05B2219/34465Safety, control of correct operation, abnormal states
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00Program-control systems
    • G05B2219/30Nc systems
    • G05B2219/37Measurements
    • G05B2219/37097Marker on workpiece to detect reference position
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0203Protection arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0216Means for avoiding or correcting vibration effects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30433System calibration
    • H01J2237/30438Registration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31793Problems associated with lithography

Definitions

  • the embodiments of the present invention relate to a drawing apparatus and a drawing method.
  • Mask drawing apparatuses are apparatuses that draw a desired pattern by irradiating plates (mask blanks) with a charged particle beam. Some of the mask drawing apparatuses have an emergency quake stop (hereinafter, EQS) function using an earthquake early warning, and temporarily bring drawing processing into a stopped state (hereinafter, also “emergency suspended state”) at the time of an earthquake.
  • EQS emergency quake stop
  • the mask drawing apparatus is alternatively set to be automatically returned a predetermined time after receiving an emergency suspension instruction.
  • a drawing apparatus includes a chamber configured to house a processing target; a drawing part configured to draw a predetermined pattern on the processing target with a charged particle beam; a resistance measuring part configured to measure a resistance value of the processing target via a grounding member grounding the processing target in the chamber; a receiver configured to receive earthquake information; a controller configured to stop a drawing process in the chamber when the receiver receives the earthquake information; and an arithmetic processor configured to determine whether the processing target is grounded on a basis of the resistance value from the resistance measuring part, wherein the controller resumes the drawing process when the arithmetic processor determines that the processing target is grounded after the drawing process is stopped.
  • a drawing method using a drawing apparatus comprising a drawing part configured to draw a predetermined pattern on a processing target with a charged particle beam, a resistance measuring part configured to measure a resistance value of the processing target via a grounding member grounding the processing target, a receiver configured to receive earthquake information, a controller configured to control a drawing process of the processing target, and an arithmetic processor configured to determine whether the processing target is grounded, the method according to the embodiment includes stopping the drawing process when the earthquake information is received during the drawing process; measuring a resistance value of the processing target after the drawing process is stopped; determining whether the processing target is grounded on a basis of the resistance value; and resuming the drawing process by the controller when it is determined that the processing target is grounded.
  • FIGS. 1 A and 1 B are schematic diagrams of a charged particle beam drawing apparatus according to a first embodiment
  • FIG. 2 is a perspective view illustrating an example of the configuration of the grounding body
  • FIG. 3 is a side view of the grounding body illustrated in FIG. 2 ;
  • FIG. 4 is a schematic diagram of the X-Y stage placed in the chamber
  • FIG. 5 is a configuration diagram of the resistance measuring part
  • FIG. 6 is a schematic diagram illustrating a manner of measuring the resistance value of the mask substrate in the W chamber
  • FIG. 7 is a flowchart illustrating an example of the operation of the drawing apparatus
  • FIG. 8 is a flowchart illustrating an example of the operation of the drawing apparatus when receiving the emergency quake information
  • FIG. 9 is a sectional schematic diagram illustrating a configuration example of a drawing apparatus according to a second embodiment
  • FIGS. 10 A and 10 B are conceptual diagrams illustrating an alignment mark and spots of the laser light from the irradiator
  • FIG. 11 is a diagram illustrating a manner in which the alignment mark is scanned with the spots of laser light
  • FIG. 12 is a flowchart illustrating an example of the operation of the drawing apparatus according to the second embodiment
  • FIG. 13 is a flowchart illustrating an example of the operation of the drawing apparatus according to the second embodiment when the emergency quake information is received.
  • FIG. 14 is a flowchart illustrating an example of the operation of a drawing apparatus according to a third embodiment.
  • FIGS. 1 A and 1 B are schematic diagrams of a charged particle beam drawing apparatus (hereinafter, also simply “drawing apparatus”) 10 according to a first embodiment.
  • FIG. 1 A is a horizontal sectional schematic diagram of the drawing apparatus 10 .
  • FIG. 1 B is a vertical sectional schematic diagram of the drawing apparatus 10 .
  • a configuration of the drawing apparatus 10 is explained below with reference to FIGS. 1 A and 1 B .
  • the charged particle beam is, for example, an electron beam or an ion beam. In the following embodiments, an electron beam is used as an example of the charged particle beam.
  • the drawing apparatus 10 includes an interface (I/F) 100 , a carry-in/out (I/O) chamber 200 , a robot chamber (R chamber) 300 , a writing chamber (W chamber) 400 , an electron beam column 500 , a control mechanism 600 , an arithmetic processor 700 , a receiver 800 , and gate valves G 1 to G 3 . Dashed lines in FIG. 1 A indicate flows of a control signal, data, and the like.
  • the I/F 100 includes a mounting table 110 on which a container C (a SMIFPod, for example) housing a mask substrate (plate) W is mounted, and a transfer robot 120 that transfers the mask substrate W.
  • a container C a SMIFPod, for example
  • a transfer robot 120 that transfers the mask substrate W.
  • the I/O chamber 200 is a so-called load lock chamber for carrying in/out the mask substrate W while maintaining the inside of the R chamber 300 in a vacuum (low pressure) state.
  • the gate valve G 1 is provided between the I/O chamber 200 and the I/F 100 .
  • the I/O chamber 200 is provided with a vacuum pump 210 and a gas supply system 220 .
  • the vacuum pump 210 evacuates the I/O chamber 200 .
  • the gas supply system 220 supplies a vent gas into the I/O chamber 200 when the I/O chamber 200 is to be brought to an atmospheric pressure.
  • the R chamber 300 includes a vacuum pump 310 , an alignment chamber (ALN chamber) 320 , a grounding body chamber (H chamber) 330 , and a transfer robot 340 .
  • the R chamber 300 is connected to the I/O chamber 200 via the gate valve G 2 .
  • the vacuum pump 310 is connected to the R chamber 300 and evacuates the R chamber 300 to keep high vacuum.
  • the H chamber 330 houses a grounding body H for grounding the mask substrate W.
  • the grounding body H covers the outer edge of the mask substrate W to suppress charges of a charged particle beam (an electron beam, for example) from accumulating on the outer edge of the mask substrate W. That is, the grounding body H functions as “eaves” for the outer edge of the mask substrate W.
  • the grounding body H is provided also to allow charges of the electron beam accumulated on the mask substrate W to escape to the ground.
  • the ALN chamber 320 is a chamber for positioning (aligning) the mask substrate W.
  • the mask substrate W is aligned in the ALN chamber 320 .
  • the transfer robot 340 transfers the mask substrate W between the I/O chamber 200 , the ALN chamber 320 , the H chamber 330 , and the W chamber 400 .
  • the W chamber 400 includes a vacuum pump 410 , an X-Y stage 420 , and laser position measuring gauges 430 A and 430 B and is coupled to the R chamber 300 via the gate valve G 3 .
  • the W chamber 400 can house the mask substrate W to draw a predetermined pattern on the mask substrate W with the electron beam.
  • the vacuum pump 410 is connected to the W chamber 400 and evacuates the W chamber 400 to keep high vacuum.
  • the X-Y stage 420 can have the mask substrate W mounted thereon.
  • the laser position measuring gauges 430 A and 430 B measure the position of the X-Y stage 420 in an X-Y plane (a substantially horizontal plane).
  • the laser position measuring gauges 430 A and 430 B also measure either one or both of the positions of the mask substrate W and the grounding body H on the X-Y stage 420 .
  • the positions of the mask substrate W and the grounding body H may be measured by a laser position measuring gauge different from the laser position measuring gauges 430 A and 430 B.
  • the positions of the mask substrate W and the grounding body H may alternatively be measured by a CCD (Charge-Coupled Device) camera 432 illustrated in FIG. 1 B taking an image of the mask substrate W and the grounding body H mounted on the X-Y stage 420 .
  • CCD Charge-Coupled Device
  • Grounding springs are provided in the W chamber 400 .
  • the grounding springs are grounded and are configured to be in contact with the grounding body H when the mask substrate W is mounted on the X-Y stage 420 . Accordingly, at the time of drawing, the mask substrate W is grounded via the grounding body H and the grounding springs.
  • a resistance measuring part 40 is provided in the W chamber 400 . The resistance measuring part 40 measures the resistance value of the mask substrate W via the grounding body H and the grounding springs that ground the mask substrate W in the W chamber 400 .
  • the electron beam column (drawing part) 500 illustrated in FIG. 1 B includes an electron beam irradiating unit constituted by an electron gun 510 , an aperture 520 , a deflector 530 , lens 540 (a lighting lens (CL), a projection lens (PL), and an objective lens (OL)), and the like and irradiates the mask substrate W mounted on the X-Y stage 420 with an electron beam to draw a predetermined pattern on the mask substrate W.
  • an electron beam irradiating unit constituted by an electron gun 510 , an aperture 520 , a deflector 530 , lens 540 (a lighting lens (CL), a projection lens (PL), and an objective lens (OL)), and the like and irradiates the mask substrate W mounted on the X-Y stage 420 with an electron beam to draw a predetermined pattern on the mask substrate W.
  • the control mechanism 600 is, for example, a computer and includes an MPU (Micro Processing Unit) 601 , a memory 602 (a solid state drive (SSD) or a hard disk drive (HDD), for example), and the like.
  • the control mechanism 600 controls the operation of the drawing apparatus 10 .
  • the arithmetic processor 700 is, for example, a computer provided separately from the control mechanism 600 and includes an MPU 701 , a memory 702 (an SSD or an HDD, for example), and the like.
  • the arithmetic processor 700 can be the same computer as the control mechanism 600 .
  • the arithmetic processor 700 receives the resistance value of the mask substrate W from the resistance measuring part 40 and performs a grounding check as to whether the mask substrate W is grounded. The grounding check will be explained in detail later.
  • the receiver 800 receives emergency quake information EQ obtained from the Japan Meteorological Agency or the like.
  • the emergency quake information EQ can be one generally provided by agencies such as the Japan Meteorological Agency and companies.
  • the emergency quake information EQ can be a vibration detection signal from a vibration sensor (an acceleration sensor) 50 that detects vibration of the drawing apparatus 10 itself.
  • the vibration sensor 50 can be placed either the inside or outside the drawing apparatus 10 .
  • the control mechanism 600 automatically stops a drawing process in the W chamber 400 using the EQS function. Accordingly, deterioration in the accuracy of drawing due to earthquake vibration can be suppressed.
  • FIG. 2 is a perspective view illustrating an example of the configuration of the grounding body H.
  • FIG. 3 is a side view of the grounding body H illustrated in FIG. 2 set on the mask substrate W.
  • FIG. 3 illustrates the grounding body H in a simplified manner.
  • the mask substrate W has a configuration in which a light shielding film Wb (chrome (Cr), for example) and a resist film We are stacked on a glass substrate Wa.
  • the grounding body H includes three grounding pins H 1 a to H 1 c and a frame body H 2 in the form of a picture frame.
  • a conductive material such as titanium or zirconia is used for the frame body H 2 and the grounding pins H 1 a to H 1 c .
  • the grounding pins H 1 a to H 1 c are, for example, metallic members fixed to nip inner and outer peripheries of the frame body H 2 .
  • the grounding pins H 1 a to H 1 c respectively have pin parts Pa to Pc pointed at a sharp angle toward the inner periphery of the frame body H 2 .
  • the grounding pins H 1 a to H 1 c also have connectors Ca to Cc, respectively, on the side of the outer periphery of the frame body H 2 .
  • the connectors Ca to Cc are electrically connected to the pin parts Pa to Pc, respectively.
  • the connectors Cb and Cc are provided to electrically connect the grounding pins H 1 b and H 1 c to the grounding springs.
  • the grounding pin H 1 a is electrically connected to the frame body H 2 without being grounded.
  • One of the grounding pins H 1 b and H 1 c is electrically connected to the frame body H 2 .
  • the other of the grounding pins H 1 b and H 1 c is provided on the frame body H 2 with an insulator interposed therebetween and is electrically separated from the frame body H 2 .
  • the grounding pins H 1 b and H 1 c are grounded via the grounding springs.
  • the grounding pins H 1 a to H 1 c of the grounding body H stick through the resist film Wc under their own weights to be in contact with the light shielding film Wb being an electrical conductor. Accordingly, the light shielding film Wb of the mask substrate W is grounded via the grounding pins H 1 a to H 1 c . Therefore, charges accumulated in the mask substrate W due to electron beam irradiation are discharged via the grounding body H.
  • the frame body H 2 of the grounding body H is grounded via the grounding pin H 1 a . Therefore, charges accumulated in the frame body H 2 are discharged via the grounding pin H 1 a.
  • the grounding pins H 1 a to H 1 c ground the light shielding film Wb of the mask substrate W via the grounding springs in the W chamber 400 . Accordingly, charges accumulated in the light shielding film Wb due to electron beam irradiation during drawing can be discharged to the ground.
  • FIG. 4 is a schematic diagram of the X-Y stage 420 placed in the W chamber 400 .
  • the X-Y stage 420 in the W chamber 400 includes a plurality of mask supports 421 that support the mask substrate W, and grounding springs Eb and Ec that ground the mask substrate W.
  • FIG. 4 illustrates a state where the mask substrate W is mounted on the X-Y stage 420 .
  • the mask supports 421 support the mask substrate W and the grounding body H mounted on the X-Y stage 420 from below.
  • the grounding springs Eb and Ec are elastically in contact with the grounding pins H 1 b and H 1 c and ground the light shielding film Wb of the mask substrate W via the grounding pins H 1 b and H 1 c . In this way, drawing is performed in the W chamber 400 in a state where the mask substrate W is mounted on the X-Y stage 420 and is grounded via the grounding springs Eb and Ec.
  • FIG. 5 is a configuration diagram of the resistance measuring part 40 .
  • the resistance measuring part 40 includes a DC power supply 41 placed outside the W chamber 400 , and a controller 42 connected to the DC power supply 41 .
  • the controller 42 includes a current control circuit 42 a , a voltage measuring circuit 42 b , and a resistance-value calculating circuit 42 c and measures an electrical resistance between terminals 40 a and 40 b .
  • the terminals 40 a and 40 b are provided in the W chamber 40 and are respectively connectable to the grounding springs Eb and Ec described above.
  • the resistance measuring part 40 measures a contact resistance value (a resistance value) between the grounding springs Eb and Ec and the mask substrate W in a state where the grounding body H is set on the mask substrate W.
  • the current control circuit 42 a passes a current of a certain value between the terminals 40 a and 40 b and the voltage measuring circuit 42 b measures a voltage between the terminals 40 a and 40 b .
  • the resistance-value calculating circuit 42 c calculates a resistance value between the terminals 40 a and 40 b from the current value passing between the terminals 40 a and 40 b and the measured voltage value.
  • the terminals 40 a and 40 b of the resistance measuring part 40 and the grounding springs Eb and Ec are respectively in a state of being electrically connected to each other.
  • the resistance measuring part 40 includes a plurality of measuring pins (not illustrated) connected to the terminals 40 a and 40 b , respectively, and brings the measuring pins into contact with the grounding springs Eb and Ec, respectively.
  • the grounding pin H 1 b or H 1 c is provided on the frame body H 2 with the insulator interposed therebetween. Accordingly, the current applied by the current control circuit 42 a flows between the terminals 40 a and 40 b via the grounding springs Eb and Ec, the grounding pins H 1 b and H 1 c , and the light shielding film Wb of the mask substrate W.
  • the contact resistance value between the terminals 40 a and 40 b and the grounding springs Eb and Ec is quite small and is nearly negligible.
  • the resistance measuring part 40 can measure, for example, the resistance value of the grounding springs Eb and Ec, the grounding pins H 1 b and H 1 c , and the light shielding film Wb of the mask substrate W between the grounding spring Eb and the grounding spring Ec.
  • FIG. 6 is a schematic diagram illustrating a manner of measuring the resistance value of the mask substrate W in the W chamber 400 .
  • the resistance value of the mask substrate W is measured via the grounding springs Eb and Ec.
  • the grounding pins H 1 b and H 1 c are in contact with the grounding springs Eb and Ec, respectively, when the mask substrate W is mounted on the X-Y stage 420 in the W chamber 400 .
  • the connectors Cb and Cc of the grounding pins H 1 b and H 1 c are in contact with the grounding springs Eb and Ec and are brought into electrical conduction with the grounding springs Eb and Ec, respectively.
  • the light shielding film Wb of the mask substrate W is grounded via the grounding pins H 1 b and H 1 c during drawing.
  • the resistance measuring part 40 measures the resistance value between the grounding spring Eb and the grounding spring Ec and performs a grounding check as explained with reference to FIG. 5 .
  • measuring pins Mb and Mc connected to the terminals 40 a and 40 b of the resistance measuring part 40 are kept in contact with the grounding springs Eb and Ec.
  • the resistance measuring part 40 measures the resistance value of the light shielding film Wb of the mask substrate W via the grounding pins H 1 b and H 1 c and the grounding springs Eb and Ec. If the connector Cb or Cc is detached from the grounding spring Eb or Ec, or the grounding pin H 1 b or H 1 c is detached from the light shielding film Wb, the resistance value has an abnormal value.
  • FIG. 7 is a flowchart illustrating an example of the operation of the drawing apparatus 10 .
  • the drawing apparatus 10 is controlled by the control mechanism 600 .
  • An abnormality in the grounding body H and the mask substrate W is determined by the arithmetic processor 700 . It is assumed that the R chamber 300 and the W chamber 400 are in a vacuum state.
  • the container C housing the mask substrate W is mounted on the mounting table 110 illustrated in FIG. 1 .
  • the transfer robot 120 takes the mask substrate W out of the container C and mounts the mask substrate W in the I/O chamber 200 (Step S 10 ).
  • the transfer robot 340 takes the mask substrate W out of the I/O chamber 200 and transfers the mask substrate W to the ALN chamber 320 .
  • the ALN chamber 320 performs positioning (alignment) of the mask substrate W (Step S 20 ). After the alignment, the transfer robot 340 transfers the mask substrate W to the H chamber 330 and sets the grounding body H mounted in the H chamber 330 on the mask substrate W (Step S 30 ).
  • the transfer robot 340 mounts the mask substrate W on the X-Y stage 420 in the W chamber 400 (Step S 60 ). With the mounting of the mask substrate W on the X-Y stage 420 , the connectors Cb and Cc of the grounding pins H 1 b and H 1 c are brought into contact with the grounding springs Eb and Ec provided in the W chamber 400 , respectively.
  • the grounding check is performed.
  • the resistance measuring part 40 of the W chamber 400 brings the terminals 40 a and 40 b into contact with the grounding springs Eb and Ec, respectively, and measures the resistance value of the light shielding film Wb of the mask substrate W via the grounding springs Eb and Ec and the grounding pins H 1 b and H 1 c (Step S 70 ).
  • the MPU 701 of the arithmetic processor 700 compares the measured resistance value with a predetermined range that is previously set (Step S 80 ).
  • the MPU 701 determines a grounding error. It is considered that a grounding error is caused by poor contact between the grounding springs Eb and Ec and the grounding pins H 1 b and H 1 c or between the grounding pins Hb 1 and H 1 c and the light shielding film Wb, or the like.
  • a grounding error occurs, the voltage is applied again to the light shielding film Wb and the grounding check is performed again (Step S 70 and NO at Steps S 80 and S 81 ).
  • Step S 90 When a grounding error is determined (YES at Step S 81 ) even after a predetermined number of times of the grounding check (Steps S 70 and S 80 ), the processing ends without performing a drawing process (Step S 90 ). In this case, the mask substrate W is returned to the container C and a maintenance is performed as necessary (Step S 95 ).
  • the MPU 701 determines that the mask substrate W is normally grounded and stores the resistance value as a reference resistance value in the memory 702 (Step S 82 ).
  • the laser position measuring gauges 430 A and 430 B measure the position of the mask substrate W and the grounding body H mounted on the X-Y stage 420 .
  • the CCD camera 432 takes an image of the mask substrate W and the grounding body H mounted on the X-Y stage 420 to measure the position thereof (Step S 85 ).
  • the position of the mask substrate W and the grounding body H is measured after the grounding check.
  • the position of the mask substrate W and the grounding body H measured before start of drawing is previously stored as a first reference position in the memory 702 (Step S 86 ).
  • the arithmetic processor 700 may determine whether the position of the mask substrate W and the grounding body H is normal in the similar manner as the grounding check. In this case, when the position of the mask substrate W and the grounding body H is determined to be normal, the position is stored as the first reference position in the memory 702 and the drawing process is performed. On the other hand, when the position of the mask substrate W and the grounding body H is determined to be abnormal, the processing can be ended without performing the drawing process (Step S 90 ).
  • the mask substrate W is irradiated with the electron beam and a desired pattern is drawn on the light shielding film Wb of the mask substrate W in the W chamber 400 (Step S 90 ).
  • Charges accumulated in the mask substrate W flow to the ground through the grounding pins H 1 b and H 1 c and the grounding springs Eb and Ec. Therefore, charging of the mask substrate W during the drawing can be suppressed.
  • the transfer robot 340 takes the mask substrate W out of the W chamber 400 and transfers the mask substrate W into the H chamber 330 .
  • the transfer robot 340 houses the grounding body H into the H chamber 330 in the opposite procedure to that of setting the grounding body H on the mask substrate W.
  • the transfer robot 340 mounts the mask substrate W into the I/O chamber 200 .
  • the gate valve G 2 is closed, a vent gas is supplied from the gas supply system 220 , the inner pressure of the I/O chamber 200 is increased to the atmospheric pressure, and thereafter the gate valve G 1 is opened.
  • the transfer robot 120 takes the mask substrate W out of the I/O chamber 200 and houses the mask substrate W in the container C (Step S 95 ). In this way, the drawing apparatus 10 performs the grounding check of the mask substrate W and performs the drawing process.
  • FIG. 8 is a flowchart illustrating an example of the operation of the drawing apparatus 10 when receiving the emergency quake information EQ.
  • the control mechanism 600 suspends the drawing process (Step S 110 ). After such an emergency stop due to an earthquake, the drawing apparatus 10 performs a restoration sequence in the following manner.
  • the resistance measuring part 40 and the arithmetic processor 700 perform the grounding check again (Step S 120 ).
  • the operation of the grounding check is identical to the operation at Steps S 70 and S 80 .
  • the resistance measuring part 40 applies a voltage to the light shielding film Wb of the mask substrate W via the terminals 40 a and 40 b , the grounding springs Eb and Ec, and the grounding pins H 1 b and H 1 c and measures the resistance value (a first resistance value) thereof similarly to Step S 70 in FIG. 7 (Step S 121 ).
  • the arithmetic processor 700 determines whether the light shielding film Wb of the mask substrate W is grounded on the basis of the first resistance value measured by the resistance measuring part 40 at Step S 121 . For example, the arithmetic processor 700 compares the first resistance value measured at Step S 121 with the reference resistance value measured at Step S 80 (Step S 122 ).
  • the arithmetic processor 700 determines that the light shielding film Wb of the mask substrate W is not grounded. It suffices that the threshold for the grounding check is stored in advance in the memory 702 .
  • the grounding check and the comparison between the first resistance value and the reference resistance value may be repeated a predetermined number of times.
  • the arithmetic processor 700 may be configured to determined that the light shielding film Wb of the mask substrate W is not grounded when the difference between the first resistance value and the reference resistance value is still equal to or larger than the threshold even after the predetermined number of times of the grounding check and the comparison. This can reliably detect poor grounding.
  • the arithmetic processor 700 transmits a signal (a resume disable signal) disabling a resume of the drawing process to the control mechanism 600 .
  • the control mechanism 600 performs an error process and ends the processing (Step S 151 ) on the basis of the resume disable signal without resuming the drawing process (Step S 90 ).
  • the error process is a process of returning the mask substrate W into the container C similarly to Step S 95 and displaying an error notification on an external display (not illustrated) or the like.
  • the arithmetic processor 700 determines that the light shielding film Wb of the mask substrate W is grounded (Step S 123 ). The drawing may be resumed at this stage.
  • the arithmetic processor 700 further checks a displacement amount of the mask substrate W and the grounding body H from the stage 420 (Step S 130 ). The check of the displacement amount is performed using the laser position measuring gauges 430 A and 430 B or the CCD camera 432 (see FIG. 1 ) serving as a first position measuring part provided in the W chamber 400 .
  • the laser position measuring gauges 430 A and 430 B or the CCD camera 432 measures again the position (a first position) of the mask substrate W and the ground position H (Step S 131 ).
  • the arithmetic processor 700 determines an abnormality in the position of the mask substrate W and the grounding body H on the basis of a difference between the first reference position of the mask substrate W and the grounding body H before the drawing and the first position of the mask substrate W and the grounding body H after the stop of the drawing process (Step S 132 ). For example, when the difference between the first reference position and the first position is smaller than a preset threshold (YES at Step S 132 ), the arithmetic processor 700 determines that the mask substrate W and the grounding body H are not displaced so much from the stage 420 (Step S 133 ).
  • the arithmetic processor 700 transmits the difference between the first reference position and the first position to the control mechanism 600 and transmits a signal (a resume enable signal) enabling a resume of the drawing process to the control mechanism 600 . It suffices to set the threshold for displacement of the mask substrate W and the grounding body H within a range that is correctable by adjustment of a shot position described later and to previously store the threshold in the memory 702 .
  • the control mechanism 600 corrects the drawing position (the shot position) on the mask substrate W by the difference between the first reference position and the first position (Step S 140 ).
  • the control mechanism 600 can correct the difference between the first reference position and the first position by adjusting the shot position of the electron beam from the electron beam column 500 on data.
  • the control mechanism 600 may correct the difference between the first reference position and the first position by position adjustment of the stage 420 . This enables the electron beam column 500 to resume the drawing process from the position where the drawing process has been stopped and to maintain the drawing accuracy.
  • the control mechanism 600 then resumes the drawing process on the basis of the resume enabling signal (Step S 150 ). It suffices to perform the process at Step S 90 and the subsequent process in FIG. 7 .
  • the arithmetic processor 700 determines that the mask substrate W and the grounding body H are greatly displaced from the stage 420 and that the position thereof is abnormal (Step S 134 ). In this case, the arithmetic processor 700 determines that the displacement of the mask substrate W and the grounding body H cannot be corrected by adjustment of the shot position and transmits a signal (a resume disable signal) disabling a resume of the drawing process to the control mechanism 600 .
  • the control mechanism 600 performs the error process on the basis of the resume disable signal and ends the processing (Step S 151 ) without resuming the drawing process (Step S 90 ).
  • the resistance measuring part 40 and the arithmetic processor 700 perform a grounding check in the restoration sequence.
  • the grounding check is performed through a comparison between a reference resistance value measured at Steps S 70 and 80 before start of drawing and a first resistance value measured at Step S 121 in the restoration sequence. Accordingly, the arithmetic processor 700 determines whether the resistance value measured in the restoration sequence is within a predetermined range from the reference resistance value and can confirm the grounding state of the light shielding film Wb of the mask substrate W.
  • the arithmetic processor 700 checks the displacement amount of the mask substrate W and the grounding body H.
  • the control mechanism 600 enables a resume of the drawing process.
  • the control mechanism 600 does not resume the drawing process.
  • the control mechanism 600 corrects the shot position by the displacement amount of the mask substrate W and the grounding body H and resumes the drawing process. Accordingly, after an emergency stop, the drawing process can be resumed from a position where the processing has been stopped and the drawing accuracy can be maintained.
  • the correction of the displacement amount of the mask substrate W and the grounding body H is accompanied by correction of the drawing position or a mechanical operation of the stage 420 . Meanwhile, the grounding check can be achieved only by an electrical check. Therefore, the measurement and correction of the displacement amount of the mask substrate W and the grounding body H is preferably performed after the grounding check.
  • the arithmetic processor 700 performs both the grounding check and the check of the displacement amount of the grounding body H (the mask substrate W) after an emergency stop.
  • the arithmetic processor 700 may perform the grounding check and omit the check of the displacement amount of the grounding body H (the mask substrate W) after an emergency stop.
  • Step S 130 in FIG. 8 is omitted and the control mechanism 600 can resume the drawing at Step S 150 after grounding of the light shielding film Wb of the mask substrate W is confirmed to ensure the safety at Step S 123 .
  • FIG. 9 is a sectional schematic diagram illustrating a configuration example of a drawing apparatus according to a second embodiment.
  • the drawing apparatus 10 of the second embodiment is a drawing apparatus used to draw a phase-shifting mask (PSM).
  • a mask substrate W for a phase-shifting mask has an alignment mark to enable plural times of the drawing processes and enhance the drawing accuracy.
  • the mask substrate W can be accurately positioned and the drawing accuracy is improved.
  • the drawing apparatus 10 further includes an irradiator 901 and a photoreceiver 902 as a second position measuring part that measures the position of the mask substrate W using the alignment mark provided on the mask substrate W.
  • the irradiator 901 irradiates a surface of the mask substrate W with laser light converged from obliquely above.
  • the photoreceiver 902 receives reflection light from the mask substrate W and detects the light quantity of the reflection light.
  • the arithmetic processor 700 instructs the irradiator 901 to irradiate with the laser light and measures the position of the alignment mark on the mask substrate W on the basis of the light quantity of the reflection light from the photoreceiver 902 .
  • the arithmetic processor 700 may alternatively measure the height of the mask substrate W using the irradiator 901 and the photoreceiver 902 .
  • Other configurations in the second embodiment can be identical to the corresponding ones in the first embodiment.
  • FIGS. 10 A and 10 B are conceptual diagrams illustrating an alignment mark and spots SP of the laser light from the irradiator 901 .
  • an alignment mark 101 is formed, for example, in a cross shape with two line patterns or space patterns in the form of lines extending in X and Y directions orthogonal to each other.
  • the alignment mark 101 is substantially parallel to the X direction and the Y direction.
  • the alignment mark 101 illustrated in FIG. 10 A is provided, for example, at four corners of the mask substrate W.
  • the alignment mark 101 is formed of parts from which the light shielding film Wb is eliminated and the reflectance of light on the alignment mark 101 is lower than that on other parts. Therefore, with the photoreceiver 902 detecting the light quantity of the reflection light of the laser light, the arithmetic processor 700 can distinguish the alignment mark 101 from other regions of the mask substrate W.
  • FIG. 11 is a diagram illustrating a manner in which the alignment mark is scanned with the spots SP of laser light.
  • the mask substrate W is scanned with the laser light from the irradiator 901 while the stage 420 is moved.
  • the light quantity of the reflection light detected by the photoreceiver 902 decreases. This enables the arithmetic processor 700 to accurately measure the position of the alignment mark 101 .
  • FIG. 12 is a flowchart illustrating an example of the operation of the drawing apparatus 10 according to the second embodiment.
  • the basic operation of the drawing process according to the second embodiment is identical to that illustrated in FIG. 7 .
  • the irradiator 901 and the photoreceiver 902 previously measure the position of the alignment mark 101 (Step S 87 ).
  • the position of the alignment mark 101 is measured after the grounding check.
  • the position of the alignment mark 101 measured before start of drawing is previously stored as a second reference position in the memory 702 (Step S 88 ). Processes such as the drawing process at Step S 90 and the subsequent step are performed thereafter.
  • FIG. 13 is a flowchart illustrating an example of the operation of the drawing apparatus 10 according to the second embodiment when the emergency quake information EQ is received.
  • the control mechanism 600 stops the W chamber 400 and the electron beam column 500 to stop the drawing process (Step S 110 ). After such an emergency stop due to an earthquake, the drawing apparatus 10 performs a restoration sequence in a manner described below.
  • the resistance measuring part 40 and the arithmetic processor 700 perform the grounding check again (Step S 120 ).
  • the operation of the grounding check is identical to that at Step S 120 in FIG. 8 .
  • the operation performed when it is determined that the light shielding film Wb of the mask substrate W is not grounded can be identical to that (the operation in the case of NO at Step S 122 in FIG. 8 ) in the first embodiment.
  • the arithmetic processor 700 further checks the position of the alignment mark 101 (Step S 160 ). In the check of the position of the alignment mark 101 , the alignment mark 101 is first detected based on the light quantity of the reflection light detected by the photoreceiver 902 (Step S 161 ) as described above.
  • the arithmetic processor 700 compares a position (a second position) of the alignment mark 101 detected after the emergency stop with the second reference position and determines an abnormality of the position of the mask substrate W on the basis of a difference between the second reference position and the second position (Step S 162 ). For example, when the difference between the second reference position and the second position is smaller than a preset threshold (YES at Step S 162 ), the arithmetic processor 700 determines that the mask substrate W and the grounding body H are not displaced so much from the stage 420 (Step S 163 ). In this case, the arithmetic processor 700 transmits the difference between the second reference position and the second position to the control mechanism 600 and transmits a signal (a resume enable signal) enabling a resume of the drawing process to the control mechanism 600 .
  • a signal a resume enable signal
  • the control mechanism 600 corrects the shot position by the difference between the second reference position and the second position.
  • the correction of the shot position can be performed in an identical manner to that in Step S 140 .
  • the control mechanism 600 resumes the drawing process on the basis of the resume enable signal for the drawing process similarly to Step S 150 .
  • the arithmetic processor 700 determines that the mask substrate W is displaced and that the position of the mask substrate W is abnormal (Step S 164 ). In this case, the arithmetic processor 700 transmits a signal (a resume disable signal) disabling a resume of the drawing process to the control mechanism 600 .
  • the control mechanism 600 performs the error process and ends the processing similarly to Step S 151 without resuming the drawing process (Step S 90 ).
  • the error process is a process of returning the mask substrate W into the container C and displaying an error notification on an external display or the like, similarly to Step S 95 .
  • the drawing apparatus 10 can check the position of the mask substrate W using the alignment mark 101 in a restoration sequence.
  • the check of the position is performed by comparing the second position of the alignment mark 101 measured after an emergency stop with the second reference position measured before start of drawing. Accordingly, the arithmetic processor 700 can determine the position of the alignment mark 101 measured in the restoration sequence and confirm whether the mask substrate W can be drawn.
  • Other configurations and operations in the second embodiment are identical to those in the first embodiment. Accordingly, the second embodiment can obtain effects identical to those in the first embodiment.
  • FIG. 14 is a flowchart illustrating an example of the operation of a drawing apparatus according to a third embodiment.
  • the drawing apparatus according to the third embodiment can be the same as that illustrated in FIG. 1 . Accordingly, detailed descriptions of the configurations of the third embodiment are omitted.
  • the error process is performed when the arithmetic processor 700 determines that the drawing process cannot be resumed.
  • the drawing process may be resumed by a lapse of time depending on items of the restoration sequence.
  • the acceleration sensor 50 is provided as a vibration sensor that is capable of detecting vibration in the drawing apparatus 10 as illustrated in FIG. 1 .
  • the arithmetic processor 700 according to the third embodiment determines whether to enable a resume of the drawing process on the basis of the acceleration from the acceleration sensor 50 .
  • the vibration sensor is not limited to the acceleration sensor 50 and examples of vibration to be detected include the seismic intensity as well as the acceleration.
  • the arithmetic processor 700 determines whether to enable a resume of the drawing process on the basis of the acceleration of the drawing apparatus 10 or the chamber 400 (Step S 172 ).
  • the arithmetic processor 700 determines that vibration of the drawing apparatus 10 caused by an earthquake is small (Step S 173 ). In this case, the arithmetic processor 700 transmits a resume enable signal to the control mechanism 600 (Step S 150 ).
  • the arithmetic processor 700 determines that vibration of the drawing apparatus 10 caused by the earthquake is still large (Step S 174 ). In this case, the arithmetic processor 700 transmits a resume disable signal to the control mechanism 600 and waits for a predetermined time (Step S 175 ).
  • the arithmetic processor 700 measures again vibration using the acceleration sensor 50 .
  • the acceleration is then lower than the preset threshold (YES at Step S 172 )
  • the arithmetic processor 700 transmits a signal enabling a resume of the drawing process to the control mechanism 600 .
  • the arithmetic processor 700 repeats the process at Step S 175 . Accordingly, when the item of the restoration sequence is the acceleration measured by the acceleration sensor 50 , the arithmetic processor 700 waits until the vibration of the drawing apparatus 10 subsides. When the vibration of the drawing apparatus 10 subsides, the arithmetic processor 700 transmits a signal enabling a resume of the drawing process to the control mechanism 600 .
  • check items (the acceleration, for example) recovered with a lapse of time are distinguished from other check items (the grounding check, for example) and the arithmetic processor 700 waits for a predetermined time when the check items that can be recovered with a lapse of time have an error. Accordingly, useless execution of the error process (Step S 151 ) can be avoided.
  • At least a part of the drawing apparatus can be configured by hardware or software.
  • a program that realizes at least some of functions of a drawing method can be stored in a recording medium such as a flexible disk or a CD-ROM and be loaded into a computer to be executed thereon.
  • the recording medium is not limited to a removable medium such as a magnetic disk or an optical disk and can be a fixed recording medium such as a hard disk drive or a memory.
  • a program that realizes at least some of the functions of the drawing method can be distributed via a communication line (including a wireless communication) such as the Internet. Further, the program can be distributed via a wired line or a wireless line such as the Internet or by being stored in a recorded medium in an encrypted, modulated, or compressed state.

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